Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 4
4.1 (b)
  Eg
ni2  N c N  exp

 
ni2  5 1012   2.5 10
2 25


 kT    1.12300 
 2.912 10 
3
 T 
 exp 
38

 T 
 N cO N O 
  Eg
3

 exp

  300  0.0259T  
 300   By trial and error, T  417.5 K
 kT 
_______________________________________
where N cO and N O are the values at 300 K.
4.4
 200 
(a) Silicon At T  200 K, kT  0.0259  
T (K) kT (eV) ni (cm 3 )  300 
 0.017267 eV
200 0.01727 7.68 10 4
 400 
400 0.03453 2.38 1012 At T  400 K, kT  0.0259  
 300 
600 0.0518 9.74 1014
 0.034533 eV
(b) Germanium (c) GaAs n i2 400 

7.70 10  10 2
 3.025  10 17
T (K) ni (cm 3 ) ni (cm 3 ) n 2
i 200  1.40 10  2 2

200 2.16 10 10

1.38  400 
3
  Eg 
  exp  
400 8.60 10 14
3.28 10 9
 300   0.034533 
 
600 3.82 10 16
5.72 1012  200 
3
  Eg 
  exp  
_______________________________________  300   0.017267 
 Eg Eg 
4.2  8 exp   
Plot  0.017267 0.034533 
_______________________________________ 
3.025  1017  8 exp E g 57.9139  28.9578 
or
4.3
 3.025 1017 
  Eg  E g 28.9561  ln    38.1714

(a) n  N c N  exp
2
i

  8 
 kT  or E g  1.318 eV
5 10   2.8 10 1.04 10  300
3
11 2 T 

19 19

  Now

7.70 10 
3
  1.12  10 2  400 
 exp    N co N o  
 0.0259T 300   300 
  1.318 
 
3
 T   exp 
2.5 10  2.912 10 
23

38
 0.034533 
 300 
  1.12300  5.929 10 21  N co N o 2.370 2.658 10 17  
 exp  
 0.0259T  
6
so N co N o  9.4110 cm 37

By trial and error, T  367.5 K _______________________________________

Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.5 (b)
  1.10    E F  E  
exp  g  1  f F   E  E exp  
n i B   kT    0.20   kT 
  exp 
n i  A   0.90   kT    E  E 
exp   E  E exp 
 kT  
 kT 
For T  200 K, kT  0.017267 eV   E F  E  
For T  300 K, kT  0.0259 eV  exp  
For T  400 K, kT  0.034533 eV
 kT 
Let E  E  x
(a) For T  200 K, x
Then g  1  f F   x exp 
n i B    0.20  6  kT 
 exp   9.325 10
ni  A  0.017267  To find the maximum value
(b) For T  300 K, d g  1  f F  d    x 
  x exp   0
n i B    0.20  4 dx dx   kT 
 exp   4.43 10
ni  A  0.0259  Same as part (a). Maximum occurs at
(c) For T  400 K, kT
x
ni B    0.20  3 2
 exp   3.05 10
ni  A  0.034533  or
kT
_______________________________________ E  E 
2
4.6 _______________________________________
  E  E F 
(a) g c f F  E  E c exp   4.7
 kT     E1  E c  
  E  E c  n  E1 
E1  E c exp  
 E  E c exp    kT 

 kT  nE 2    E 2  E c  
  E c  E F   E 2  E c exp  
 exp    kT 
 kT  where
Let E  E c  x kT
E1  E c  4kT and E 2  E c 
x 2
Then g c f F  x exp  Then
 kT 
nE1  4kT   E1  E 2  
To find the maximum value:  exp  
d g c f F  1 1 / 2 x nE 2  kT  kT 
 x exp 
dx 2  kT  2
x   1 

1 1/ 2
 x exp 0  2 2 exp   4    2 2 exp 3.5
kT  kT    2 
which yields or
1 x1 / 2 kT n  E1 
 x  0.0854
2x 1/ 2
kT 2 n E 2 
The maximum value occurs at _______________________________________
kT
E  Ec  4.8
2
Plot
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.9 4.13
Plot Let g c E   K  constant
_______________________________________ Then

4.10 no  g c E  f F E dE
3  m *p 
 kT ln  * 
Ec
E Fi  E midgap
4  mn  
 

1
K dE
Silicon: m  0.56m o , m  1.08mo
* * 
Ec 1  exp
E  EF 
p n
 kT 
E Fi  Emidgap  0.0128 eV  
  E  E F  

Germanium: m *p  0.37 m o , m n*  0.55mo
E Fi  Emidgap  0.0077 eV Ec

 K exp 
 kT dE

Let
Gallium Arsenide: m *p  0.48m o ,
E  Ec
m n*  0.067 mo  so that dE  kT  d
kT
E Fi  Emidgap  0.0382 eV We can write
_______________________________________ E  E F   E c  E F   E  E c 
so that
4.11   E  E F     E c  E F  
N  exp    exp    exp  
E Fi  E midgap 
1
kT  ln   

 kT   kT 
2  Nc  The integral can then be written as
  E c  E F  

 
kT  ln  1.04 1019   0.4952kT 
19

 exp  d 
1
 n o  K  kT  exp 
2  2.8 10   kT 0
which becomes
T (K) kT (eV) ( E Fi  E midgap)(eV)   E c  E F  
no  K  kT  exp  
200 0.01727  0.0086  kT 
400 0.03453  0.0171 _______________________________________
600 0.0518  0.0257
4.14
Let g c E   C1 E  E c  for E  E c
_______________________________________
Then

4.12
no  g E  f F E dE
3  m *p  c

(a) E Fi  E midgap  kT ln  *  Ec
 mn 
4   
E  E c 
 0.0259 ln 
3  0.70 
 C1   E  EF 
dE
 Ec 1  exp 
4  1.21   kT 
 10.63 meV
 E  E F  


 0.75   C1  E  E  exp   dE
(b) E Fi  E midgap  0.0259 ln 
3 C
  kT 
 0.080 
Ec
4
Let
 43.47 meV
E  Ec
_______________________________________  so that dE  kT  d
kT
We can write
E  E F  E  E c   E c  E F 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Then The ionization energy is

  E c  E F    m*  o 
2

 13.6   13.6
n o  C1 exp  0.067
 E   
  
 kT   mo  s  13.12
  E  E c  

or
  E  E  exp
Ec
c
kT  dE
 E  0.0053 eV
_______________________________________
or
  E c  E F   4.17
n o  C1 exp  
 kT  N 
(a) E c  E F  kT ln  c 


 no 
  kT  exp kT d  2.8 1019 
0  0.0259 ln  15 

We find that  7 10 

  0.2148 eV
  exp  d  exp     1  1 (b) E F  E  E g  Ec  E F 
0
0
So  1.12  0.2148  0.90518 eV
  E c  E F     E F  E 
no  C1 kT  exp  (c) p o  N  exp  
2
  kT 
 kT 
_______________________________________

 1.04 1019 exp  
  0.90518 

 0.0259 
4.15
 6.90  10 3 cm 3
r m 
We have 1 r  o*  (d) Holes
ao m  n 
For germanium, r  16 , m *  0.55mo (e) E F  E Fi  kT ln  o 
 ni 
Then
 7 1015 
 1   0.0259 ln  
r1  16 a o  290.53 10 
 1.5 10 
 0.55 
or  0.338 eV
o _______________________________________
r1  15.4 A
The ionization energy can be written as 4.18
 m *  o 
2 N 
E     13.6  eV (a) E F  E  kT ln   

   po 
 m o  s 
 1.04 1019 

0.55
13.6  E  0.029 eV  0.0259 ln  
16 
162  2 10 
_______________________________________  0.162 eV
(b) Ec  E F  E g  E F  E 
4.16  1.12  0.162  0.958 eV
r1 m 
We have
ao
r  o* 
m 

(c) n o  2.8 1019 exp 
  0.958 

 0.0259 
For gallium arsenide, r  13.1 ,
 2.4110 3 cm 3
m  0.067 mo
*

Then
 1 
r1  13.1 0.53  104 A
o

 0.067 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

p  4.21
(d) E Fi  E F  kT ln  o   375 
 ni  (a) kT  0.0259   0.032375 eV
 300 
 2 1016 
 0.0259 ln  
 
3/ 2
10   375    0.28 
 1.5 10  no  2.8 1019   exp  
 0.365 eV  300   0.032375 
_______________________________________  6.86 1015 cm 3
E F  E  E g  Ec  E F   1.12  0.28
4.19
 0.840 eV
N 
(a) E c  E F  kT ln  c 
 
3/ 2
  375    0.840 
 no  p o  1.04 1019   exp  
 300   0.032375 
 2.8 1019 
 0.0259 ln  5 
  7.84  10 7 cm 3
 2 10  N 
 0.8436 eV (b) E c  E F  kT ln  c 

E F  E  E g  Ec  E F   no 
 2.8 1019 
 1.12  0.8436  0.0259 ln  
15 
E F  E  0.2764 eV  6.862 10 
 0.2153 eV
   0.27637 
(b) p o  1.04 1019 exp   E F  E  1.12  0.2153  0.9047 eV
 0.0259 
 2.414 1014 cm 3 
p o  1.04 1019 exp  
  0.904668 

(c) p-type  0.0259 
_______________________________________  7.04  10 3 cm 3
_______________________________________
4.20
 375 
(a) kT  0.0259
4.22
  0.032375 eV (a) p-type
 300 
Eg 1.12
(b) E F  E    0.28 eV
 
3/ 2
 375    0.28 
no  4.7 10 17
  exp   4 4
 300   0.032375    E F  E 
 1.15 1014 cm 3 p o  N  exp  
 kT 
E F  E  E g  Ec  E F   1.42  0.28
 1.14 eV 
 1.04 1019 exp  
  0.28 

 0.0259 
 
3/ 2
 375    1.14 
p o  7 1018   exp    2.10 1014 cm 3
 300   0.032375  Ec  E F  E g  E F  E 
 4.99  10 3 cm 3  1.12  0.28  0.84 eV
 4.7 1017 
(b) E c  E F  0.0259 ln     E c  E F  
14  n o  N c exp  
 1.15 10   kT 
 0.2154 eV
E F  E  E g  Ec  E F   1.42  0.2154 
 2.8 1019 exp  
  0.84 

 0.0259 
 1.2046 eV
 2.30  10 5 cm 3

p o  7 1018    1.2046 
exp  
_______________________________________
 0.0259 
 4.42 10 2 cm 3
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.23 4.25
 E  E Fi   400 
(a) n o  ni exp  F  kT  0.0259   0.034533 eV
 kT   300 

 
 0.22 
 
3/ 2
 1.5 1010 exp   400 
 N   1.04 1019  
 0.0259   300 
 7.33 1013 cm 3  1.6011019 cm 3
 E  EF 
 
3/ 2
p o  ni exp  Fi   400 
N c  2.8 1019  
 kT   300 
    0.22 
 1.5 1010 exp  
 4.3109 1019 cm 3
 0.0259 
3
 
ni2  4.3109 1019 1.6011019 
 3.07  10 cm
6
  1.12 
 E  E Fi   exp  
(b) n o  ni exp  F   0.034533 
 kT   5.6702 10 24
  0.22 
 1.8 10 6 exp    ni  2.3811012 cm 3
 0.0259 
N 
 8.80  10 9 cm 3 (a) E F  E  kT ln   
 po 
 E  EF 
p o  ni exp  Fi   1.6011019 
 kT   0.034533 ln  

 5 10
15

 
 1.8 10 6 exp 
  0.22 
  0.2787 eV
 0.0259 
(b) E c  E F  1.12  0.27873  0.84127 eV
 3.68  10 2 cm 3
_______________________________________ 
(c) no  4.3109 1019 exp  
  0.84127 

 0.034533 
4.24  1.134 10 9 cm 3
N  (d) Holes
(a) E F  E  kT ln   

 po  p 
(e) E Fi  E F  kT ln  o 
 1.04 1019   ni 
 0.0259 ln  15 

 5 10   5 1015 
 0.034533 ln  
12 
 0.1979 eV  2.38110 
(b) Ec  E F  E g  E F  E   0.2642 eV
 1.12  0.19788  0.92212 eV _______________________________________

 
(c) n o  2.8 1019 exp 
  0.92212 
 4.26
 0.0259 
 9.66  10 3 cm 3 (a)     0.25 
p o  7 1018 exp  
 0.0259 
(d) Holes
p
  4.50 1014 cm 3
(e) E Fi  E F  kT ln  o

 E c  E F  1.42  0.25  1.17 eV
 ni

 5 1015  
n o  4.7 1017 exp  
  1.17 

 0.0259 ln  
10 
 0.0259 
 1.5 10   1.13 10 2 cm 3
 0.3294 eV
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) kT  0.034533 eV
 
  0.77175 
no  4.3111019 exp  
 
3/ 2
 400   0.034533 
N   7 10  18

 300   8.49  10 9 cm 3
 1.078 1019 cm 3 _______________________________________

 
3/ 2
 400 
N c  4.7 1017   4.28
 300 
N c F1 / 2  F 
2
3
(a) n o 
 7.236 10 cm 17

N  For E F  E c  kT 2 ,
E F  E  kT ln   

 po  E F  E c kT 2
F    0 .5
 1.078 1019  kT kT
 0.034533 ln  
14  Then F1 / 2  F   1.0
 4.50 10 
 0.3482 eV no 
2
2.8 10 1.0
19

E c  E F  1.42  0.3482  1.072 eV 

 3.16 1019 cm 3
 7.236 10 exp 
  1.07177 
17
no
0.034533    (b) n o 
2
N c F1 / 2  F 
3 
 2.40  10 cm 4

_____________________________________ 
2
4.7 10 1.0
17


4.27  5.30 1017 cm 3
(a) 
p o  1.04 10 19
   0.25 
exp  
_______________________________________
 0.0259 
4.29
 6.68 1014 cm 3
N  F1 / 2  F 
2
E c  E F  1.12  0.25  0.870 eV po 

 
  0.870 
n o  2.8 1019 exp   5  10 19 
2
1.04 10 F   
 0.0259 
19
1/ 2 F
3

no  7.23 10 cm 4
So F1 / 2  F   4.26
(b) kT  0.034533 eV
E  E F
We find  F  3.0 
 
3/ 2
 400 
N   1.04 1019   kT
 300  E  E F  3.00.0259  0.0777 eV
 1.6011019 cm 3 _______________________________________

 
3/ 2
 400 
N c  2.8 10 19
  4.30
 300  E F  E c 4kT
(a)  F   4
 4.3111019 cm 3 kT kT
N  Then F1 / 2  F   6.0
E F  E  kT ln   
 po  no 
2
N c F1 / 2  F 
 1.60110 19
 
 0.034533 ln  

 6.68 10
14
 
2
2.8 10 6.0
19

 0.3482 eV 
E c  E F  1.12  0.3482  0.7718 eV  1.90 10 20 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) n o 
2
4.7 10 6.0 17
p E  

4 2m *p  3/ 2
   E F  E  
exp 
 
 
3
h kT
 3.18 1018 cm 3
E  E   E  E 
_______________________________________  kT exp  
kT  kT 
4.31 Define
For the electron concentration E  E
nE   g c E  f F E  x 
kT
The Boltzmann approximation applies, so Then

n E  
4 2m n 
* 3/ 2
E  Ec
px   K  x  exp x 
h 3
To find maximum value of pE   px  , set
  E  E F   dp x 
 exp    0 Using the results from above,
 kT  dx 
or we find the maximum at

nE  

4 2m n* 
3/ 2
  E c  E F  
exp  E  E  kT
1
 2
 
3
h kT
_______________________________________
E  Ec   E  E c  
 kT exp   4.32
kT  kT 
(a) Silicon: We have
Define
E  Ec   E c  E F  
x n o  N c exp  
kT  kT 
Then We can write
E c  E F  E c  E d   E d  E F 
nE   nx   K x exp x 
For
To find maximum nE   nx  , set
E c  E d  0.045 eV and E d  E F  3kT eV
dnx  1
 0  K  x 1 / 2 exp x  we can write
2
    0.045 
dx
no  2.8 1019 exp   3
 x 1 / 2  1 exp x   0.0259 

 2.8 10 exp 4.737
19
or
or
1 
0  Kx 1 / 2 exp x   x n o  2.45 1017 cm 3
2 
We also have
  E F  E 
which yields
1 E  Ec 1 p o  N  exp  
x   E  E c  kT  kT 
2 kT 2
For the hole concentration Again, we can write
pE   g  E 1  f F E  E F  E  E F  E a   E a  E 
Using the Boltzmann approximation For
E F  E a  3kT and E a  E  0.045 eV
pE  

4 2m *p  3/ 2

E  E Then
h3
  E F  E     
p o  1.04 1019 exp  3 
0.045 
0.0259 
 exp   
   1.04 10 exp 4.737 
kT 19
or
or
p o  9.12 1016 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) GaAs: assume E c  E d  0.0058 eV 2

 1014 
Then no 
1014
    1.722 1013
  
2

2  2 
    0.0058 
no  4.7 1017 exp   3
 1.029 1014 cm 3
 0.0259 
 4.7 10 exp 3.224
17
po 
1.722 10  13 2
 2.88 1012 cm 3
or 1.029 1014
no  1.87 1016 cm 3 _______________________________________
Assume E a  E  0.0345 eV 4.35
Then (a) p o  N a  N d  4 1015  1015
    0.0345 
p o  7 1018 exp   3  31015 cm 3
 0.0259 
 7 10 exp 4.332
18
no 
ni2


1.8 10 6 2

 1.08 10 3 cm 3
po 3 1015
or
p o  9.20 1016 cm 3 (b) no  N d  31016 cm 3
_______________________________________
po 
1.8 10  6 2
 1.08 10  4 cm 3
3 1016
4.33
Plot (c) no  p o  ni  1.8 10 6 cm 3

  
3
_______________________________________  375 
(d) ni2  4.7 1017 7.0 1018  
 300 
4.34
p o  4 15  1015  3 1015 cm 3   1.42300  
(a)  exp  
 0.0259 375 
no 
1.5 10  10 2
 7.5 10 4 cm 3  ni  7.580 10 8 cm 3
3 1015
(b) no  N d  31016 cm 3 p o  N a  41015 cm 3

1.5 10 10 2

3 no 
7.580 10  8 2
 1.44 10 2 cm 3
po   7.5 10 cm3
4 1015
3 10 16

  
3
(c) no  p o  ni  1.5 1010 cm 3  450 
(e) ni2  4.7 1017 7.0 1018  
 300 
  
3
 375 
(d) ni2  2.8 1019 1.04 1019     1.42300  
 300   exp  
  1.12300    0.0259 450  
 exp    ni  3.853 1010 cm 3
 0.0259 375 
 ni  7.334 1011 cm 3 no  N d  1014 cm 3

p o  N a  41015 cm 3 po 
3.853 10  10 2
 1.48 10 7 cm 3
7.334 10 
14
11 2 10
no   1.34 10 8 cm 3 _______________________________________
4 1015

  
3
 450  4.36
(e) n  2.8 10 1.04 10 
2 19

19
i
 300  (a) Ge: ni  2.4 1013 cm 3
  1.12300   Nd N 
2
 exp   (i) n o    d   ni2
 0.0259 450   2  2 
 ni  1.722 1013 cm 3 2
 2 1015 

2 1015
  
  2.4 1013
 
2

2  2 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

or Then
n o  N d  21015 cm 3 f F E  
1
n2
po  i 

2.4 10 
13 2 
1  exp1 
0.245 

 0.0259 
no 2 1015
or
 2.88 1011 cm 3
f F E   2.87 10 5
(ii) p o  N a  N d  1016  7 1015 _______________________________________
 31015 cm 3
n2
no  i 
2.4 1013  2 4.38
(a) N a  N d  p-type
po 3 1015
(b) Silicon:
 1.92 1011 cm 3 p o  N a  N d  2.5 1013  11013
(b) GaAs: ni  1.8 10 6 cm 3 or
(i) n o  N d  21015 cm p o  1.5 1013 cm 3
1.8 10 
6 2 Then
po 
2 1015
 1.62 10 3 cm 3 ni2
no  

1.5 1010  2

 1.5 10 7 cm 3
(ii) p o  N a  N d  31015 cm 3 po 1.5 1013

no 
1.8 10  6 2
 1.08 10 3 cm 3
Germanium:
2
3 1015 N  Nd  N  Nd 
po  a   a   n i2
(c) The result implies that there is only one 2  2 
minority carrier in a volume of 10 3 cm 3 . 2
 1.5 1013   1.5 1013 
_______________________________________    
   
  2.4 1013 
2

 2   2 
4.37 or
(a) For the donor level
p o  3.26 1013 cm 3
nd 1
 Then
 Ed  EF 
 
Nd 1
1  exp  ni2 2.4 1013
2
2  kT  no    1.76 1013 cm 3
p o 3.264 1013
1
 Gallium Arsenide:
1  0.20 
1  exp  p o  N a  N d  1.5 1013 cm 3
2  0.0259 
and
 
or 2
ni2 1.8 10 6
nd
 8.85  10  4 no    0.216 cm 3
Nd po 1.5 1013
(b) We have _______________________________________

f F E  
1
4.39
 E  EF  (a) N d  N a  n-type
1  exp 
 kT  (b) no  N d  N a  2 1015  1.2 1015
Now
E  E F  E  E c   E c  E F   81014 cm 3
or
po 
ni2


1.5 1010 
2

 2.8110 5 cm 3
E  E F  kT  0.245 no 8 1014
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(c) p o  N a  N a   N d 4.43
Plot
4 10 15
 N a  1.2 10  2 10 15 15
_______________________________________
 N a  4.8 1015 cm 3

no 
1.5 10  10 2
 5.625 10 cm 4 3
4.44
Plot
4 1015 _______________________________________
_______________________________________
4.45
4.40 2
Nd  Na  N  Na 
n2
no  i 
1.5 1010 
 1.125 1015 cm 3
2
no 
2
  d
 2
  ni2

po 2 10 5
2  10 14  1.2  10 14
n o  p o  n-type 1.1 10 14 
2
_______________________________________
2
 2  1014  1.2  1014 
4.41     n i2

 2 
  
3
 250 
ni2  1.04 1019 6.0 1018  
 300 
1.110 14
 4 1013   4 10 
2 13 2
 ni2

  0.66  4.9 10 27  1.6 10 27  ni2

 exp  
 0.0259250 300 so ni  5.74 1013 cm 3
 1.8936 10 24 ni2 3.3  10 27
po   3  1013 cm 3
 ni  1.376 1012 cm 3 n o 1.1 1014
_______________________________________
ni2 n2 1
no   i  n o2  n i2
p o 4n o 4 4.46
1 (a) N a  N d  p-type
 no  ni
2 Majority carriers are holes
So no  6.88 1011 cm 3 , p o  N a  N d  3 1016  1.5 1016
Then p o  2.75 1012 cm 3  1.5 1016 cm 3
Minority carriers are electrons
 
2
Na N  2
po    a   ni2 n2 1.5 1010
2  2  no  i   1.5 10 4 cm 3
po 1.5 10 16
2
 N  (b) Boron atoms must be added
 2.752 1012  a 
 2  p o  N a  N a  N d

N 
2
5 1016  N a  3 1016  1.5 1016
  a   1.8936 10 24
 2  So N a  3.5 1016 cm 3

 N 
7.5735 10 24  2.752 1012 N a   a  
2

no 
1.5  10  10 2
 4.5  10 3 cm 3
 2  5  10 16

2 _______________________________________
N 
  a   1.8936 10 24
 2 
so that N a  2.064 1012 cm 3
_______________________________________

4.42
Plot
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.47 N 
(a) p o  ni  n-type (b) E F  E Fi  kT ln  d 

 ni 
n i2 n2
(b) p o   no  i  Nd 
no po  0.0259 ln  
10 
 1.5  10 
no 
1.5 10  10 2
 1.125 1016 cm 3 For 10 14 cm 3 , E F  E Fi  0.2280 eV
2 10 4
10 15 cm 3 , E F  E Fi  0.2877 eV
 electrons are majority carriers
p o  210 4 cm 3 10 16 cm 3 , E F  E Fi  0.3473 eV
 holes are minority carriers 10 17 cm 3 , E F  E Fi  0.4070 eV
(c) n o  N d  N a _______________________________________
1.125 1016  N d  7 1015
4.50
so N d  1.825 1016 cm 3 2
N N 
_______________________________________ (a) n o  d   d   ni2
2  2 
4.48 no  1.05 N d  1.05 1015 cm 3
p 
E Fi  E F  kT ln  o  1.05 10 15
 0.5 1015 
2

 ni 
For Germanium 
 0.5 1015  2
 ni2
T (K) kT (eV) ni (cm 3 ) so ni2  5.25 10 28
200 0.01727 2.16 1010 Now

  
3
8.60 1014  T 
400 0.03453 ni2  2.8 1019 1.04 1019  
600 0.0518 3.82 1016  300 
  1.12 
 exp  
 0.0259T 300 
2
Na N 
po    a   ni2 and
 
3
2  2   T 
5.25 10 28  2.912 10 38  
N a  1015 cm 3  300 
T (K) p o (cm 3 ) E Fi  E F  (eV)   12972.973 
 exp  
200 1.0  10 15 0.1855  T 
By trial and error, T  536.5 K
400 1.49  10 15
0.01898
(b) At T  300 K,
600 3.87 1016 0.000674
N 
E c  E F  kT ln  c 
_______________________________________  no 
 2.8 1019 
4.49 E c  E F  0.0259 ln  15


N  10 
(a) E c  E F  kT ln  c

  0.2652 eV
 Nd
 At T  536.5 K,
 2.8 1019   536.5 
 0.0259 ln  
 kT  0.0259   0.046318 eV
 Nd   300 
3
For 10 cm , E c  E F  0.3249 eV
 
14 3/ 2
 536.5 
N c  2.8 1019  
10 15 cm 3 , E c  E F  0.2652 eV  300 
10 16 cm 3 , E c  E F  0.2056 eV  6.696 1019 cm 3
10 17 cm 3 , E c  E F  0.1459 eV
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

N  Then, T  200 K, E Fi  E F  0.4212 eV

E c  E F  kT ln  c 

 no  T  400 K, E Fi  E F  0.2465 eV
 6.696 1019  T  600 K, E Fi  E F  0.0630 eV
E c  E F  0.046318 ln  15 
 _______________________________________
 1.05 10 
 0.5124 eV 4.52
then E c  E F   0.2472 eV (a)
(c) Closer to the intrinsic energy level. N   Na 
_______________________________________ E Fi  E F  kT ln  a   0.0259 ln  
6 
 ni   1.8 10 
4.51 For N a  1014 cm 3 , E Fi  E F  0.4619 eV
p  N a  1015 cm 3 , E Fi  E F  0.5215 eV
E Fi  E F  kT ln  o 
 ni 
16
N a  10 cm 3 , E Fi  E F  0.5811 eV
At T  200 K, kT  0.017267 eV
N a  1017 cm 3 , E Fi  E F  0.6408 eV
T  400 K, kT  0.034533 eV
(b)
T  600 K, kT  0.0518 eV
N   7.0 1018 
E F  E  kT ln     0.0259 ln  

At T  200 K,  Na   Na 

  
3 3
 200  For N a  10 cm , E F  E  0.2889 eV
14
ni2  2.8 1019 1.04 1019  
 300  N a  1015 cm 3 , E F  E  0.2293 eV
  1.12  16
N a  10 cm 3 , E F  E  0.1697 eV
 exp  
 0.017267 
N a  1017 cm 3 , E F  E  0.1100 eV
 ni  7.638 10 4 cm 3 _______________________________________
At T  400 K,

  
3 4.53
 400 
n  2.8 10
2
i
19
1.04 10  
19
 m *p 
 300  (a) E Fi  E midgap 
3
kT ln  * 
4  mn 
  1.12   
 exp  
 0.034533 

3
0.0259 ln 10
 ni  2.38110 cm 3 12 4
At T  600 K, or
E Fi  Emidgap  0.0447 eV
 1.04 10 
3
 600 
n  2.8 10
2
i
19 19
  (b) Impurity atoms to be added so
 300  Emidgap  E F  0.45 eV
  1.12  (i) p-type, so add acceptor atoms
 exp  
 0.0518  (ii) E Fi  E F  0.0447  0.45  0.4947 eV
 ni  9.740 1014 cm 3 Then
At T  200 K and T  400 K,  E  EF 
p o  ni exp Fi 
p o  N a  31015 cm 3  kT 
At T  600 K,
   0.4947 
 10 5 exp 
N N 
2  0.0259 
p o  a   a   ni2 or
2  2 
p o  N a  1.97 1013 cm 3
2
 3  1015 

3  1015
  
  9.740  1014
 
2 _______________________________________
2  2 
 3.288 1015 cm 3
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.54 N 
  E c  E F   (b) E F  E Fi  kT ln  c 
n o  N d  N a  N c exp    Nd 
 kT 
 2.8 1019 
so  0.0259 ln    0.1876 eV
16 
 2 10 

N d  5 1015  2.8 1019 exp 
  0.215 
 (c) For part (a);
 0.0259 
p o  21016 cm 3
 5 1015  6.95 1015
or
no 
ni2


1.5 1010 
2

N d  1.2 1016 cm 3 po 2 1016

_______________________________________  1.125 10 4 cm 3
For part (b):
4.55
n o  21016 cm 3
(a) Silicon
N  po 
ni2


1.5 1010  2

(i) E c  E F  kT ln  c 
 Nd 
no 2 1016
 2.8 1019   1.125 10 4 cm 3
 0.0259 ln  15 
  0.2188 eV _______________________________________
 6 10 
(ii) E c  E F  0.2188  0.0259  0.1929 eV 4.57
  E c  E F    E  E Fi 
n o  ni exp  F
N d  N c exp   
 kT   kT 


 2.8 1019 exp  
  0.1929 

   0.55 
 1.8 10 6 exp  
 0.0259   0.0259 
N d  1.6311016 cm 3  N d  61015  3.0 1015 cm 3
Add additional acceptor impurities
 N d  1.0311016 cm 3 Additional
no  N d  N a
donor atoms
(b) GaAs 3 1015  7 1015  N a
 4.7 1017   N a  41015 cm 3
(i) E c  E F  0.0259  ln  

 10
15
 _______________________________________
 0.15936 eV
4.58
(ii) E c  E F  0.15936  0.0259  0.13346 eV
p 
(a) E Fi  E F  kT ln  o 

N d  4.7 10 exp 17

  0.13346 
  ni 
 0.0259 
 3 1015 
 2.718 1015 cm 3  N d  1015  0.0259 ln    0.3161 eV
10 
 1.5 10 
 N d  1.718 1015 cm 3 Additional
n 
donor atoms (b) E F  E Fi  kT ln  o 
_______________________________________  ni 
 3 1016 
4.56  0.0259  ln    0.3758 eV
10 
N   1.5 10 
(a) E Fi  E F  kT ln    (c) E F  E Fi
 Na 
 1.04  1019 
 0.0259 ln  16 
  0.1620 eV
 2  10 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

p  4.60
(d) E Fi  E F  kT ln  o  n-type
 ni  n 
 375   4 10
15
 E F  E Fi  kT ln  o 
 0.0259  ln  
11 
 ni 
 300   7.334 10 
 1.125  10 16 
 0.2786 eV  0.0259  ln    0.3504 eV
 
 1.5  10 
10
n 
(e) E F  E Fi  kT ln  o  ______________________________________
 ni 
 450   1.029 10 
14
4.61
 0.0259  ln 
 300   1.722 10 
13 2
Na N 
po    a   ni2
 0.06945 eV 2  2 
_______________________________________
5  10 15
5.08  10 15 
4.59 2
N   5  1015 
2
(a) E F  E  kT ln        n i2
 po  
 2 
 7.0 1018 
 0.0259 ln  15 
  0.2009 eV 5.08 10 15
 2.5 1015  2

 3 10 
 2.5 10  15 2
 ni2
 7.0 1018 
(b) E F  E  0.0259  ln  
4  6.6564 10 30  6.25 10 30  ni2
 1.08 10 
 1.360 eV  ni2  4.064 10 29
 7.0 1018    Eg 
(c) E F  E  0.0259  ln  
6 
ni2  N c N  exp  
 1.8 10   kT 
 0.7508 eV  350 
kT  0.0259   0.030217 eV
 375   300 
(d) E F  E  0.0259 
 300 
 
2
 350 
  1.633 10 cm 3
  N c  1.2 1019  19
 7.0  10 375 300 
18 3/ 2
  300 
 ln  
 4  10 15 
 
2
 350 
N   1.8 1019    2.45 10 cm 3
19
 0.2526 eV  300 
 450 
(e) E F  E  0.0259  Now
 300  
4.064 10 29  1.633 1019 2.45 1019  
 ln 
 18

 7.0  10 450 300  

3/ 2
  Eg 
 exp  
 1.48  10 7   0.030217 
 1.068 eV So
_______________________________________ 
 1.633 1019 2.45 1019 
E g  0.030217  ln 
 

 4.064 10 29 
 E g  0.6257 eV
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 4
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

4.62
(a) Replace Ga atoms  Silicon acts as a
donor
 
N d  0.05 7 1015  3.5 1014 cm 3
Replace As atoms  Silicon acts as an
acceptor
 
N a  0.95 7 1015  6.65 1015 cm 3
(b) N a  N d  p-type
(c) p o  N a  N d  6.65 1015  3.5 1014
 6.3 1015 cm 3

no 
ni2


1.8 10 6 
2

 5.14 10  4 cm 3
po 6.3 10 15

p 
(d) E Fi  E F  kT ln  o 
 ni 
 6.3 1015 
 0.0259 ln  6 
  0.5692 eV
 1.8 10 
_______________________________________