Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 5
5.1 1

(a)  
1

1 
1.6  10 220  8  10 1619
  
e n N d 
1.6  10 19 1300  1015     0.355  -cm
 4.808  -cm (b)   e n N d

(b)  
11
 0.208 (  -cm) 1
 
120  1.6 10 19  n N d 
 4.8077
From Figure 5.3, for N d  21017 cm 3 ,
_______________________________________
then  n  3800 cm 2 /V-s which gives
5.2   1.6 10 19 38002 1017 
  e p N a
 121.6 (  -cm) 1
 1.80
or N a   _______________________________________
e p 1.6 10 19 380
5.5
 2.96 1016 cm 3
L L L
_______________________________________ R  
A A e n N d A
5.3 L
(a)   e n N d or  n 
eN d RA

10  1.6 10 19  n N d  2.5

From Figure 5.3, for N d  61016 cm 3 we 1.6 10 2 10 700.1
19 15

find  n  1050 cm 2 /V-s which gives  1116 cm 2 /V-s

  1.6 10 19 10506 1016  _______________________________________

 10.08 (  -cm) 1 5.6

(b)  
1 (a) no  N d  1016 cm 3
e p N a and

0.20 
1
po 
ni2


1.8 10 6  2

 3.24 10  4 cm 3
1.6 10  19
p Na no 1016
From Figure 5.3, for N a  1017 cm 3 we (b)
J  e n n o 
find  p  320 cm 2 /V-s which gives
For GaAs doped at N d  1016 cm 3 ,
1
  0.195  -cm
1.6 10 32010 
19 17  n  7500 cm 2 /V-s
Then
   
_______________________________________
J  1.6 10 19 7500 1016 10
5.4 or
1 J  120 A/cm 2
(a)  
e p N a (b) (i) p o  N a  1016 cm 3
1 ni2
0.35 
1.6 10  19
p Na
no 
po
 3.24  10  4 cm 3

From Figure 5.3, for N a  81016 cm 3 we (ii) For GaAs doped at N a  1016 cm 3 ,
find  p  220 cm 2 /V-s which gives  p  310 cm 2 /V-s
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

J  e p po  (b) R  L  R  68.933  206.79 


 1.6 10 19
31010 10
16 V
I 
2
 0.00967 A
or R 206.79
J  4.96 A/cm 2 or I  9.67 mA
_______________________________________ (c) J  ep o d
29.0 10 3
5.7 For (a), J  4
 34.12 A/cm 2
8.5 10
(a) V  IR  10  0.1R
J 34.12
Then  d  
or
R  100 
ep o 
1.6  10 19 2  1016  
(b)  1.066 10 cm/s 4

L L 9.67 10 3
R   For (b), J   11.38 A/cm 2
A RA 8.5 10  4
or 11.38
d 

10 3
 0.01 (  -cm) 1 
1.6  10 19 2  10 16  
100 10 3    3.55 10 cm/s 3

(c)   e n N d _______________________________________
or

0.01  1.6 10 19 1350N d  5.9
Then (a) For N d  21015 cm 3 , then
N d  4.63 1013 cm 3  n  8000 cm 2 /V-s
(d)   e p po V 5
R   200 
or I 25  10 3

0.01  1.6 10 19 480 p o  R
L
Then e n N d A
p o  1.30 1014 cm 3  N a  N d or L  e n N d RA
So   
 1.6 10 19 8000 2 1015 200 5 10 5   
N a  1.30 1014  1015  1.13 1015 cm 3  0.0256 cm
Note: For the doping concentrations I
obtained, the assumed mobility values are (b) J   en o d
A
valid. I
_______________________________________ or  d 
Aen o 
5.8 25 10 3

(a) R 
L

L 5 10  5
1.6 10 19 2 1015  
A e p Na A  1.56 10 cm/s 6

For N a  21016 cm 3 , then (c) I  en o d A

 p  400 cm 2 /V-s  
 1.6 10 19 2 1015 5 10 6 5 10 5   
R
0.075  0.080 A
1.6  10 19
4002 1016 8.5 10 4  or I  80 mA
_______________________________________
 68.93 
V 2
I   0.0290 A
R 68.93
or I  29.0 mA
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

5.10 (b) N a  N d  1016 cm 3

V 3
(a)     3 V/cm   n  1250 cm 2 /V-s
L 1
d 10 4  p  410 cm 2 /V-s
 d  n    n  
 3 
1
or 1.6 10 
19
1250  410 1.5 1010  
 n  3333 cm 2 /V-s  2.5110  -cm
5

(b)
(c) N a  N d  1018 cm 3
 d   n   8003
or   n  290 cm 2 /V-s
 d  2.4 10 3 cm/s  p  130 cm 2 /V-s
_______________________________________ 1

5.11
1.6 10 290  1301.5 10 
19 10

(a) Silicon: For   1 kV/cm,  9.92 10 5  -cm

 d  1.2 10 6 cm/s _______________________________________
Then
5.13
d 10 4
tt    8.33 10 11 s (a) GaAs:
 d 1.2 10 6 
  e p p o  5  1.6  10 19  p p o 
For GaAs:  d  7.5 10 6 cm/s From Figure 5.3, and using trial and error, we
Then find
d 10 4 p o  1.3 1017 cm 3 and
tt    1.33 10 11 s
 d 7.5 10 6  p  240 cm 2 /V-s
(b) Silicon: For   50 kV/cm, Then
 d  9.5 10 6 cm/s
no 
ni2

1.8 10 6 2

 2.49 10 5 cm 3
Then
po 1.3 1017
10 4
tt   1.05 10 11 s (b) Silicon:
9.5 10 6 1
For GaAs:  d  7 10 6 cm/s    e n n o

Then or
10 4 1 1
tt   1.43 10 11 s no  
7 10 6

e n 8 1.6  10 19 1350  
_______________________________________ which gives
n o  5.79 1014 cm 3
5.12
1 1 and
 
 
e n no  e p p o e  n   p ni po 
ni2

1.5 1010  2

 3.89 10 5 cm 3
no 5.79 1014
(a) N a  N d  1014 cm 3
Note: For the doping concentrations obtained
  n  1350 cm 2 /V-s in part (b), the assumed mobility values are
 p  480 cm 2 /V-s valid.
_______________________________________
1

1.6 10 
19

1350  480 1.5 1010 
 2.28 10  -cm
5
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

5.14 L
 i  eni  n   p  (b) R 
A
Then (i) Si:
 
10 6  1.6 10 19 1000  600ni
R
200 10 4
 5.36 10 9 
or  
4.39 10 6 85 10 8 
ni (300 K)  3.9110 9 cm 3 (ii) Ge:
Now 200 10 4
R  1.06 10 6 
  Eg 
ni2  N c N  exp 
 2
2.23 10 85 10 8
 
 (iii) GaAs:
 kT 
or 200 10 4
R  9.19 1012 
N N  
2.56 10 9 85 10 8  
E g  kT ln  c 2   _______________________________________
 ni 
 1019 2
 0.0259  ln 
  

5.16
(a)   e n N d

 3.91 10 9  2

which gives 
0.25  1.6 10 19  n N d 
E g  1.122 eV From Figure 5.3, for N d  1.2 1015 cm 3 ,
Now then  n  1300 cm 2 /V-s
 
ni2 (500K)  1019
2 
exp 
 1.122 

 
So   1.6 10 19 1300 1.2 1015  
 0.0259500 300   0.2496 (  -cm) 1
 5.15 10 26 (b) Using Figure 5.2,
or (i) For T  250 K ( 23 C),
ni (500 K)  2.27 1013 cm 3   n  1800 cm 2 /V-s
Then   1.6 10 19 18001.2 1015 
 
 i  1.6 10 19 2.27 1013 1000  600   0.346 (  -cm) 1
which gives (ii) For T  400 K ( 127 C),
 i (500 K)  5.8110 3 (  -cm) 1   n  670 cm 2 /V-s
  1.6 10 19 6701.2 1015 
_______________________________________

5.15  0.129 (  -cm) 1

(a) (i) Silicon:  i  eni  n   p   _______________________________________
 i  1.6 10 19
1.5 10 1350  480
10
5.17
or t t
x
  x dx   o exp 
1 1
 i  4.39 10 6 (  -cm) 1  avg  dx
(ii) Ge:
t 0 t 0  d 
 
 i  1.6 10 19 2.4 1013 3900  1900  
o
 d  exp  x 
t

or t  d 0
 i  2.23 10 2 (  -cm) 1  od    t  
 exp   1
(iii) GaAs: t   d  
 
 i  1.6 10 19 1.8 10 6 8500  400  200.3 1  exp  1.5 
  
1.5 
or
 0.3 
 i  2.56 10 9 (  -cm) 1
 3.97 (  -cm) 1
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

5.18 (b)   1 kV/cm

(a)   
V 2
 133.3 V/cm  d  13501000  1.35 10 6 cm/s
L 150  10  4 or
(b)  x   e n N d x   d  1.35 10 4 m/s
T

 2 10 1  1.111T dx

1  x  Then
 avg  e n  16

T 0
1

T  1.08 9.1110 31 1.35 10 4
2
 


e n 2 10 x
16
  x  2 T
or
2
 
T  21.111T  0 T  8.97 10 23 J  5.60 10 4 eV

 n

e 2 1016  T2  _______________________________________
T  
T  21.111T  5.21

 e n 2 1016 0.55    Eg
(a) ni2  N c N  exp



 1.6 10 19
7502 10 0.55
16
 kT


 avg  1.32 (  -cm) 1
 
  1.10 
 2 1019 11019 exp  
(c) I 
 avg A
V 
1.327.5 10 4 10 4  2
 0.0259 
L 150 10  4  7.18 1019
5
 1.32 10 A or
or I  13.2  A ni  8.47 10 9 cm 3
(d) Top surface; For N d  1014 cm 3 >> ni  n o  1014 cm 3

  1.6 10 19 750 2 1016    Then
 2.4 (  -cm) 1 J    e n n o 
J    2.4133.3  320 A/cm 2  
 1.6 10 19 1000  1014 100  
Bottom surface: or

  1.6 10 19 750 2 1015    J  1.60 A/cm 2
(b) A 5% increase is due to a 5% increase in
 0.24 (  -cm) 1 electron concentration, so
J    0.24133.3  32 A/cm 2 2
N N 
_______________________________________ n o  1.05  10 14
 d   d   n i2
2  2 
5.19 which becomes
Plot
_______________________________________
1.05 10 14
 5 1013   5 10 
2 13 2
 ni2
and yields
5.20 ni2  5.25 10 26
(a)   10 V/cm
  Eg 
  
3
 T 
so  2 1019 11019   exp 

 d   n   135010  1.35 10 4 cm/s  300   kT 
or or
 
3
 d  1.35 10 2 m/s  T   1.10
2.625 10 12    exp  
Then  300   0.0259T 300 
1 By trial and error, we find
T  m n* d2
2 T  456 K

  
_______________________________________
 1.08 9.1110 31 1.35 10 2
1 2

2
or
T  8.97 10 27 J  5.60 10 8 eV
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

5.22 (b) From Figure 5.3,

n2 n-type:  n  1100 cm 2 /V-s
(a)   e n no  e p po and n o  i
po p-type:  p  400 cm 2 /V-s
Then
compensated:  n  1000 cm 2 /V-s
e n 2
  n i  e p p o (c) n-type:   e n no
   
po
 1.6 10 19 1100  5 1016
To find the minimum conductivity, set
 1e n ni2
1
d  8.8 (  -cm)
0  e p p-type:   e p po
dp o p o2
which yields  
 1.6 10 19 400 2 1016  
1
 1.28 (  -cm)
1/ 2
 
p o  n i  n  (Answer to part (b)) compensated:   e n no
 p 
 
Substituting into the conductivity expression  
 1.6 10 19 1000  3 1016  
1
e n ni2  4.8 (  -cm)
   min 
 
ni  n  p
1/ 2
  (d) J     
J

 
 e p n i  n  p  
1/ 2
120


which simplifies to n-type:    13.6 V/cm

8 .8
 min  2en i  n  p 120
p-type:    93.75 V/cm
The intrinsic conductivity is defined as 1.28
i
 i  eni  n   p   eni  compensated:  
120
 25 V/cm
n   p 4 .8
The minimum conductivity can then be _______________________________________
written as
2 i  n  p 5.24
 min  1 1 1 1
n   p   
 1 2 3
_______________________________________
1 1 1
  
5.23 2000 1500 500
(a) n-type: no  N d  51016 cm 3  0.00050  0.000667  0.0020
or
n2
po  i 

1.5 1010 2
1
 0.003167
no 5 1016 
 4.5 10 3 cm 3 Then
p-type: p o  N a  210 cm 16 3   316 cm 2 /V-s

no 
1.5 10 10 2
 1.125 10 4 cm 3
_______________________________________

2 10 16
5.25
compensated: n o  N d  N a 3 / 2 3 / 2
 T   300 
 n  1300   1300 
 5 10  2 10
16 16
 300   T 
 31016 cm 3 (a) At T  200 K,


1.5 10 10 2
 7.5 10 3 cm 3  n  1300
 300 
3/ 2

 2388 cm 2 /V-s
po 
3 1016  200 
(b) At T  400 K,  n  844 cm 2 /V-s
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

 1015  nx1  
 
5.26
1 1 1 1 1 (b)  2  1.6 10 19 230 4 
     0.006  0  20 10 
 1 2 250 500
4  103  3.68  102  3.68  1017 nx1 
Then
  167 cm 2 /V-s nx1   8.911014 cm 3
_______________________________________ _______________________________________

5.27 5.32
d  16  x 
2
Plot dp
_______________________________________ J p  eD p  eD p 10 1   
dx dx   L  
5.28 1016  x
Plot  eD p   21  
_______________________________________
L  L
(a) For x  0 ,
5.29
Jp 
   
 1.6 10 19 10 1016 2
dn  5 1014  n0  12 10  4
J n  eDn  eDn  

dx  0.01  0   26.7 A/cm 2
(b) For x  6  m,
 5 1014  n0 

0.19  1.6 10 19 25  
 0.010 
    
 6
 1.6 10 19 10 1016 21  
 12 
Then Jp  4
0.190.010  5 1014  n0 12 10

1.6  10 19 25   13.3 A/cm 2
(c) For x  12  m,
which yields
n0  0.25 1014 cm 3 Jp 0
_______________________________________ _______________________________________

5.30 5.33
For electrons:
dn n
J n  eD n
dx
 eD n
x J n  eD n
dn
dx
 eD n
d
dx

10 15 e  x / Ln 
 2 10  5 10 
   
16 15
J n  1.6 10 19 27    eD n 1015 e  x / Ln
 0  0.012  
Ln
J n  5.4 A/cm 2 At x  0 ,
_______________________________________
Jn 
   
 1.6 10 19 25 1015
 2 A/cm 2
3
5.31 2 10
For holes:
dn n
(a) J n  eD n
dx
 eD n
x J p  eD p
dp
dx
 eD p
d
dx
5  10 15 e 
 x / Lp

 1015  nx1  

 2  1.6 10 19 30  4  
 eD p 5  10 15 e   x / Lp

 0  20 10  
Lp
4 10 3  4.8 10 3  4.8 10 18 nx1 
For x  0 ,
which yields
nx1   1.67 1014 cm 3 Jp 
  
 1.6 10 19 10 5 1015 
 16 A/cm 2
4
5 10
J Total  J n x  0  J p x  0
 2   16  18 A/cm 2
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

5.34 5.36
J p  eD p
dp
dx
 eD p
d
dx
5  10 15 ex / Lp
 (a) J n  eD n
dn
dx
 eD n
d
dx

2  10 15 e  x / L 

eD p 5  10 15 e  x / Lp

 eD n 2 1015 e  x / L



Lp L
1.6 10 105 10 
19 15

  
 1.6 10 19 27  2 1015 e  x / L 
(a) (i) J p  15 10  4
50 10  4
 5.76e  x / L
 1.6 A/cm 2
  
1.6 10 19 48 5 1015  (b) J p  J Total  J n  10   5.76e  x / L  
(ii) J p 
22.5 10  4 
 5.76e  x / L 10 A/cm 2 
 17.07 A/cm 2 (c) We have J p    e p po   
(b) (i) J p 
  
1.6 10 19 10 5 1015 e 1  5.76e x / L
 10  1.6 10 19
42010  16

50 10  4 
So   8.57e  x / L 14.88 V/cm 
 0.589 A/cm 2 _______________________________________
(ii) J p 
  
1.6 10 19 48 5 1015 e 1 
5.37
22.5 10  4
dnx 
 6.28 A/cm 2 (a) J  e n nx   eD n
_______________________________________ dx
We have  n  8000 cm 2 /V-s, so that
5.35 Dn  0.02598000  207 cm 2 /s
dn
J n  e n n  eD n Then

or
dx
 
100  1.6 10 19 800012nx 
dnx 
     x 
 40  1.6 10 19 9601016 exp  

 1.6  10 19 207   dx
  18  which yields

 1.6 10 19 25 1016    
100  1.536  10 14 nx   3.312  10 17   dndxx 
 1  x
 4
 exp  Solution is of the form
 18 10   18 
x
Then nx   A  B exp 
   x  x  d 
 40  1.536exp   22.22 exp  so that
  18   18 
dnx   B x
We find  exp 
dx d  d 
22.22 exp  x   40 Substituting into the differential equation, we
 18 
 have
1.536  exp  x 
 18   
100  1.536 10 14  A  B exp 
  x 

or   d 
x 3.312 10  B exp  x  17

  14.5  26.0 exp  

 18  d  d 
_______________________________________ This equation is valid for all x, so

100  1.536 10 14 A 
or
A  6.511015
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

Also Then
x E F  E Fi  0.4  2.5 10 2 x
1.536 10 14 B exp 
 d  so


3.312 10  B exp  x   0
17  0.4  2.5 10 2 x 
n  ni exp 

d  d   kT 
which yields dn
(b) J n  eD n
d  2.156 10 3 cm dx
At x  0 , e n n0  50   2.5 10 2   0.4  2.5 10 2 x 
so that  eDn ni   exp
 


 kT   kT 
 
50  1.6 10 19 800012 A  B 
Assume T  300 K, so kT  0.0259 eV and
which yields
ni  1.5 1010 cm 3
B  3.255 1015
Then
Then
x Jn 
   
 1.6  10 19 25 1.5  1010 2.5  10 2 
nx   6.511015  3.255 1015 exp  cm 3 0.0259
 d 
 0.4  2.5 10 2 x 
(b)  exp 

At x  0 , n0  6.511015  3.255 1015  0.0259 
Or or
n0  3.26 1015 cm 3  0.4  2.5 10 2 x 
J n  5.79 10  4 exp 

At x  50  m,  0.0259 
  50  (i) At x  0 , J n  2.95 10 A/cm3 2
n50  6.511015  3.255 1015 exp 
 21.56  (ii) At x  5  m, J n  23.7 A/cm 2
or _______________________________________
n50  6.19 1015 cm 3
(c) 5.39
At x  50  m, (a) J n  e n n  eD n
dn
J drf  e n n50 dx

  
 1.6 10 19 8000 6.19 1015 12     
 x
 80  1.6 10 19 1000  1016 1  
or  L
J drf x  50  95.08 A/cm 2     1016 
 1.6 10 19 25.9 

Then  L 
J diff x  50  100  95.08 where L  10 10 4  10 3 cm
or We find
J diff x  50  4.92 A/cm 2  x 
 80  1.6  1.6 3   41.44
_______________________________________  10 
or
5.38 x 
 E  E Fi  80  1.6  1  41.44
n  ni exp F  L 
 kT  Solving for the electric field, we find
(a) E F  E Fi  ax  b , b  0.4 24.1

 
V/cm
0.15  a 10 3  0.4 x 
  1
which yields L 
a  2.5 10 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) For J n  20 A/cm 2 5.42

 kT  1 dN d x 
x   x     
20  1.6  1  41.44  e  N d x  dx
L 
Then For N d x   N do e  x / L
13.3 0.0259
 V/cm So  X   500 V/cm
 x L
1  
 L Which yields L  5.18 10 5 cm
_______________________________________ _______________________________________

5.40 5.43
 kT  1 dN d x  (a) We have
(a)  X     dN d x 
 e  d N  x  dx J diff  eD n
dn
 eD n
dx dx
 0.0259  d
 
N do e  x / L dx

N do e  x / L  
eD n x
 N do exp 
 L   L 
 0.0259    1 
    N do e  x / L We have
N do e  x / L  L   kT 
Dn   n    60000.0259

0.0259

0.0259  e 
L 10  10  4 or
D n  155.4 cm 2 /s
or  X  25.9 V/cm
Then
L

(b)     X dx  25.9 L  0 

 
 1.6 10 19 155.4 5 1016  
x

0
J diff 

0.110  4 
exp 
 L 

 25.9 10 10 4  0.0259 V  or
or   25.9 mV x
J diff  1.243 10 5 exp  A/cm 2
_______________________________________  L 
(b)
5.41 0  J drf  J diff
From Example 5.6 Now
x 
 
0.0259 1019  0.0259 10 3   J drf  e n n

1016  1019 x 
1  10 3 x  
10 4    
   x 
 1.6 10 19 6000 5 1016 exp  
  L 
V  0
 x dx
or
   x 
J drf  48exp
10 4
 
 0.0259 10   3dx
1  10 x 
0
3
We have
  L 

   
104
 1  J drf   J diff
 0.0259 10 3  3  ln 1  10 3 x
 10  0 so
 0.0259ln 1  0.1  ln 1  
48exp  x   1.243 10 5 exp  x 
or   L   L 
V  2.73 mV which yields
_______________________________________
  2.59 10 3 V/cm
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

5.44 5.48
Plot (a) V H  0  n-type
_______________________________________
(b) n 
 I X BZ


 0.50 10 3 0.10 
5.45 edV H  
1.6 10 19 10 5  5.2 10 3  
(a) (i) Dn  0.02591150  29.8 cm 2 /s  6.0110 m 21 3

(ii) Dn  0.02596200   160.6 cm /s 2 or n  6.011015 cm 3

IX L
(b) (i)  p 
8
 308.9 cm 2 /V-s (c)  n 
0.0259 enV X Wd

(ii)  p 
35
 1351 cm 2 /V-s 
0.5 10 10 
3 3

0.0259 1.6 10 19

6.0110 1510 10 
21 4 5

_______________________________________  0.03466 m 2 /V-s

5.46 or  n  346.6 cm 2 /V-s
L  10 1 cm, W  10 2 cm, d  10 3 cm _______________________________________
(a)

VH 
 I X BZ


 1.2 10 3 5 10 2   5.49

(a) V H   H W   16.5 10 3 5 10 2  
ned  
2 10 22 1.6 10 19 10 5   or
 1.875 10 3 V V H  0.825 mV
or V H  1.875 mV (b) V H  negative  n-type
(b)
I x Bz
V  1.875 10 3 (c) n 
H  H   0.1875 V/cm edV H
10  2
W
_______________________________________ 
 
 0.5 10 3 6.5 10 2 
  
1.6 10 19 5 10 5  0.825 10 3 
5.47 or
I x Bz n  4.924 10 21 m 3  4.924 1015 cm 3
(a) V H 
ned (d)



 250 10 6 5 10 2   n 
IxL
 
5 10 21 1.6 10 19 5 10 5   enV xWd
or

0.5 10 0.5 10 
3 2

V H  0.3125 mV 1.6 10 19

4.924 10 1.255 10 5 10 
21 4 5

(b) or
V  0.3125 10 3  n  0.1015 m 2 /V-s  1015 cm 2 /V-s
H  H 
W 2 10  2 _______________________________________
or
 H  1.56 10 2 V/cm
(c)
IxL
n 
enV xWd


250 10 10  6 3

1.6 10 19

5 10 0.12 10 5 10 
21 4 5

or
 n  0.3125 m 2 /V-s  3125 cm 2 /V-s
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 5
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

5.50
(a) V H  negative  n-type
I x Bz
(b) n 
edV H



 2.5 10 3 2.5 10 2  
 
1.6 10 19 0.0110  2  4.5 10 3  
or
n  8.68 10 20 m 3  8.68 1014 cm 3
IxL
(c)  n 
enV xWd



2.5 10 3 0.5 10 2 
 

 1.6 10
19
 
8.68 10 2.2 
20

 1 

 2
 0.05 10 0.0110 
2 
 
or
 n  0.8182 m 2 /V-s  8182 cm 2 /V-s
1
(d)    e n n

 
 1.6  10  19 8182 8.68  10 14  
or
  0.88 (  -cm)
_______________________________________