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JFET Amplifier Frequency Response Study

1. The document describes an experiment to study the frequency response of a common source JFET amplifier and determine its bandwidth. The circuit diagram shows an n-channel JFET with an AC signal capacitively coupled to the gate and resistors used for biasing. 2. As the input signal swings the gate-source voltage, it causes the drain current to swing in phase, which then causes the drain-source voltage to swing out of phase. This is illustrated on the transfer and drain characteristic curves. 3. The procedure involves varying the input frequency from 50Hz to 1MHz while measuring the output voltage. A graph of gain vs frequency will be plotted from which the bandwidth can be determined.

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Sakshi Gosavi
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0% found this document useful (0 votes)
95 views4 pages

JFET Amplifier Frequency Response Study

1. The document describes an experiment to study the frequency response of a common source JFET amplifier and determine its bandwidth. The circuit diagram shows an n-channel JFET with an AC signal capacitively coupled to the gate and resistors used for biasing. 2. As the input signal swings the gate-source voltage, it causes the drain current to swing in phase, which then causes the drain-source voltage to swing out of phase. This is illustrated on the transfer and drain characteristic curves. 3. The procedure involves varying the input frequency from 50Hz to 1MHz while measuring the output voltage. A graph of gain vs frequency will be plotted from which the bandwidth can be determined.

Uploaded by

Sakshi Gosavi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
  • JFET Amplifier (Common Source)
  • Review Questions

Dr.

Babasaheb Ambedkar Technological University Lonere, Raigad, Maharashtra


2017
EXPERIMENT NO:
TITLE: JFET AMPLIFIER (COMMON SOURCE)
AIM: To study the frequency response of a Common Source Field Effect Transistor and to
find the Bandwidth from the Response.
APPARATUS:
Sr. No Name Range / Value Quantity
1 Dual Regulated D.C (0-30 Volts) 1
Power supply
2 JFET BFW 10 or 11 1
3 Signal Generator (0-1 MHz) 1
4 Dual Trace CRO (0-20 MHz) Each 1
5 Bread Board and -- 1 Set
connecting wires
6 Capacitors 10µf , 100µf 2,1
7 Resistors 1K, 1M, 2.2K Each 1

CIRCUIT DIAGRAM:

Department of Electronics and Telecommunication Engineering Page 1


Dr. Babasaheb Ambedkar Technological University Lonere, Raigad, Maharashtra
2017
THEORY:
A self-biased n-channel JFET with an AC source capacitively coupled to the gate is shown in
Figure [Link] resistor, RG, serves for two purposes: it keeps the gate at approximately 0 V dc
(because IGSS is extremely small), and its large value (usually several MΩ) prevents loading
of the ac signal source. The bias voltage is created by the drop across RS. The bypass
capacitor, C2, keeps the source of the FET effectively at ac ground.
The signal voltage causes the gate-to-source voltage to swing above and below its Q-point
value, causing a swing in drain current. As the drain current increases, the voltage drop
across RD also increases, causing the drain voltage to decrease. The drain current swings
above and below its Q-point value in-phase with the gate-to-source voltage. The drain-to-
source voltage swings above and below its Q-point value 180° out-of-phase with the gate-to-
source voltage
The operation just described for an n-channel JFET can be illustrated graphically on both the
transfer characteristic curve and the drain characteristic curve in Figure 2. Figure 2-a shows
how a sinusoidal variation, Vgs, produces a corresponding variation in Id. As Vgs swings
from the Q point to a more negative value, Id decreases from its Q-point value. As Vgs
swings to a less negative value, Id increases. Figure 2-b shows a view of the same operation
using the drain curves. The signal at the gate drives the drain current equally above and
below the Q point on the load line, as indicated by the arrows. Lines projected from the peaks
of the gate voltage across to the ID axis and down to the VDS axis indicate the peak-to-peak
variations of the drain current and drain-to-source voltage, as shown.

PROCEDURE:
1. Connect the circuit as per the Fig.
2. Keep I/P Voltage at 100mV.
3. Vary the frequency from 50 Hz to 1MHz in appropriate steps and note down the
corresponding source voltage Vs and o/p Voltage Vo in a tabular Form .
4. Plot the frequency (f) Vs Gain (Av) on a semi-log graph sheet and determine the
Bandwidth. From the graph.
TABULAR FORM:

Department of Electronics and Telecommunication Engineering Page 2


Dr. Babasaheb Ambedkar Technological University Lonere, Raigad, Maharashtra
2017

MODEL GRAPH:

RESULT:
Bandwidth , B.W = f2 – f1 = Hz
CONCLUSION:

Department of Electronics and Telecommunication Engineering Page 3


Dr. Babasaheb Ambedkar Technological University Lonere, Raigad, Maharashtra
2017
QUESTION:
1. What are the advantages of JFET over BJT?
2. Why input resistance in FET amplifier is more than BJT amplifier
3. What is a Uni-polar Device?
4. What is Pinch off Voltage?
5. What are the various FETs?
6. What is Enhancement mode and depletion mode?
7. Draw the equivalent circuit of JFET for Low frequencies
8. Write the mathematical equation for gm in terms of gmo.
9. Write equation of FET ID in terms of VGS and VP.

Department of Electronics and Telecommunication Engineering Page 4

Common questions

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To determine the bandwidth of a JFET amplifier, one plots the gain (Av) against frequency (f) on a semi-log graph sheet. The frequency at which the gain drops to 70.7% (-3 dB point) of its maximum value allows for the calculation of the bandwidth as the difference between the cutoff frequencies f2 and f1. A semi-log graph is used because it effectively represents exponential decay and wide ranges in frequencies, making it easier to identify the bandwidth over the logarithmic scale .

In a common source JFET amplifier, capacitors serve crucial roles: coupling capacitors block DC components from the input signal while allowing AC signals to pass through, which maintains the DC biasing conditions without altering AC signals. Bypass capacitors, such as C2 in the source degeneration configuration, provide a low-impedance path for AC signals, ensuring that any AC current does not pass through the DC biasing resistors like RS, which would otherwise reduce gain and bandwidth by introducing unintended resistance in the signal path .

The gate-to-source voltage Vgs controls the channel conductivity in a JFET. When Vgs equals the pinch-off voltage Vp, the channel becomes pinched off, and the drain current Id approaches zero, effectively turning off the JFET. This relationship is critical, as it determines the threshold at which the JFET switches between an 'on' and 'off' state, making Vp a defining characteristic for setting the operating region of JFETs in circuit designs .

JFET amplifiers have a high input resistance due to the gate's thin insulation, which minimizes current input, unlike BJTs which have lower input resistance as they rely on current-controlled operation. JFETs are thus better suited for high-impedance circuits and applications where minimal loading of the input source is essential, such as signal buffering. In contrast, BJTs, with their higher transconductance, are more suitable for applications requiring high-gain amplification, making them suitable for low-impedance environments .

The bias voltage in a common source JFET amplifier is created by the voltage drop across the resistor RS. The bypass capacitor C2 keeps the source of the FET effectively at AC ground. This ensures that the AC signal does not experience voltage drop across RS, allowing the AC input signal to modulate the gate-source voltage without being affected by potential DC biasing issues .

A load line on a JFET characteristic curve represents all possible combinations of drain current (Id) and drain-to-source voltage (Vds) for a given load resistance. It helps in understanding the amplifier's operation by illustrating the voltage and current conditions at different points of the signal cycle, including the Q-point (quiescent point), where the circuit operates under no signal conditions. This visualization allows engineers to analyze how the amplifier will respond to AC signals, ensuring it operates within the desired linear region to minimize distortion .

Enhancement mode FETs require a gate-source voltage greater than the threshold voltage to conduct, meaning they are "normally off" and require positive voltage to switch on. In contrast, depletion mode FETs are "normally on," as they conduct without any gate voltage and only require biasing to turn off the channel. Enhancement mode FETs are suitable for digital switching applications due to their energy efficiency in 'off' state, while depletion mode FETs are advantageous in analog applications where normally-on operation facilitates continuous current flow .

The resistor RG serves two primary functions in the operation of an n-channel JFET amplifier: it maintains the gate of the JFET at approximately 0 V dc, as IGSS is extremely small, and its large value, typically several megaohms, prevents the loading of the AC signal source. This ensures that the gate remains effectively isolated from the AC signal, allowing proper amplification without affecting the source's output .

The primary tools necessary for evaluating the frequency response and bandwidth of a JFET amplifier include a dual regulated D.C power supply, a signal generator, a dual-trace CRO (oscilloscope), and a breadboard with connecting wires. The signal generator provides a variable frequency signal to test how the amplifier responds over a range of frequencies. The CRO is used to visualize the input and output waveforms, verifying the gain and phase shift, and the power supply ensures proper biasing of the JFET. These tools collectively ensure accurate measurements of frequency response and the calculation of bandwidth .

A sinusoidal variation in Vgs produces a corresponding variation in the drain current Id. As Vgs swings more negative, Id decreases from its Q-point value; conversely, as Vgs becomes less negative, Id increases. This causes the drain current to oscillate about its Q-point value. Notably, the input and output signals have a 180° phase shift: as the gate-to-source voltage increases (less negative), leading to increased drain current, the drain-to-source voltage decreases, enforcing the phase inversion typical of a common source amplifier configuration .

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