STF6N65K3, STFI6N65K3, STU6N65K3

N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET

in TO-220FP, I²PAKFP, IPAK
Datasheet — production data

Features
Order codes VDSS RDS(on) max. ID Ptot
STF6N65K3 TAB
30 W
STFI6N65K3 650 V < 1.3 Ω 5.4 A
STU6N65K3 110 W 3
3
2 1 2
1 2
3 1
■ 100% avalanche tested
TO-220FP I²PAKFP IPAK
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
Figure 1. Internal schematic diagram
■ Zener-protected
D(2,TAB)
Applications
■ Switching applications

Description G(1)

These SuperMESH3™ Power MOSFETs are the

result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
S(3)
resistance, superior dynamic performance and
AM01476v1
high avalanche capability, rendering them suitable
for the most demanding applications.

Table 1. Device summary

Order codes Marking Package Packaging

STF6N65K3 TO-220FP
STFI6N65K3 6N65K3 I²PAKFP Tube
STU6N65K3 IPAK

November 2012 Doc ID 18424 Rev 2 1/16

This is information on a product in full production. [Link] 16
Contents STF6N65K3, STFI6N65K3, STU6N65K3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) .......................... 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

2/16 Doc ID 18424 Rev 2

STF6N65K3, STFI6N65K3, STU6N65K3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220FP I²PAKFP IPAK

VDS Drain-source voltage 650 V

VGS Gate- source voltage ± 30 V
ID Drain current (continuous) at TC = 25 °C 5.4 (1) 5.4 A
ID (1)
Drain current (continuous) at TC = 100 °C 3 3 A
IDM (2) Drain current (pulsed) 21.6 (1)
21.6 A
PTOT Total dissipation at TC = 25 °C 30 110 W
Avalanche current, repetitive or not-
IAR 5.4 A
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS 100 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Gate-source human body model
ESD 2.5 kV
(C = 100 pF, R = 1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope 12 V/ns
Insulation withstand voltage (RMS) from all
VISO three leads to external heat sink 2500 V
(t = 1 s; TC = 25 °C)
Tstg Storage temperature -55 to 150 °C
Tj Max. operating junction temperature 150 °C
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 5.4 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

Table 3. Thermal data

Value
Symbol Parameter Unit
TO-220FP I²PAKFP IPAK

Rthj-case Thermal resistance junction-case max 4.17 1.14 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 100 °C/W

Doc ID 18424 Rev 2 3/16

Electrical characteristics STF6N65K3, STFI6N65K3, STU6N65K3

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 650 V
breakdown voltage
Zero gate voltage VDS = 650 V 0.8 µA
IDSS
drain current (VGS = 0) VDS = 650 V, TC=125 °C 50 µA
Gate-body leakage
IGSS VGS = ± 20 V ±9 µA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V
Static drain-source
RDS(on VGS = 10 V, ID = 2.7 A 1.1 1.3 Ω
on-resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Input capacitance
Ciss 880 pF
Output capacitance
Coss VDS = 50 V, f = 1 MHz, VGS = 0 - 65 - pF
Reverse transfer
Crss 12 pF
capacitance
Eq. capacitance time
Co(tr)(1) - 43 - pF
related
VGS = 0, VDS = 0 to 520 V
Eq. capacitance
Co(er)(2) - 27 - pF
energy related
Intrinsic gate
RG f = 1 MHz open drain - 3.5 - Ω
resistance
Qg Total gate charge VDD = 500 V, ID = 5.4 A, 33 nC
Qgs Gate-source charge VGS = 10 V - 4 - nC
Qgd Gate-drain charge (see Figure 18) 21 nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS

4/16 Doc ID 18424 Rev 2

STF6N65K3, STFI6N65K3, STU6N65K3 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 14 ns

VDD = 325 V, ID = 2.7 A,
tr Rise time 10 ns
RG = 4.7 Ω, VGS = 10 V - -
td(off) Turn-off-delay time 44 ns
(see Figure 17)
tf Fall time 24 ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 5.4 A

-
ISDM (1) Source-drain current (pulsed) 21.6 A
VSD (2) Forward on voltage ISD = 5.4 A, VGS = 0 - 1.5 V
trr Reverse recovery time 285 ns
ISD = 5.4 A, di/dt = 100 A/µs
Qrr Reverse recovery charge - 5100 nC
VDD = 60 V (see Figure 22)
IRRM Reverse recovery current 14 A
trr Reverse recovery time ISD = 5.4 A, di/dt = 100 A/µs 330 ns
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 2500 nC
IRRM Reverse recovery current (see Figure 22) 15.5 A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Gate-source breakdown Igs=± 1 mA, ID=0

V(BR)GSO 30 - V
voltage (open drain)

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components

Doc ID 18424 Rev 2 5/16

Electrical characteristics STF6N65K3, STFI6N65K3, STU6N65K3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP
and I²PAKFP and I²PAKFP
AM12960v1
ID
(A) Tj=150°C
Tc=25°C
Single pulse
10
is
ea
ar (on)
1 his
t DS 10µs
in a xR
ion m
rat by
e d
Op mite 100µs
0.1 Li

1ms
10ms
0.01

0.001
0.1 1 10 100 VDS(V)

Figure 4. Safe operating area for IPAK Figure 5. Thermal impedance for IPAK
AM12961v1
ID
(A) Tj=150°C
Tc=25°C
Single pulse

10µs
10
is
a
n)
R e

100µs
ax ar
(o
DS
m is
by in th
ite tion
Lim era

1
d

1ms
Op

10ms

0.1
0.1 1 10 100 VDS(V)

Figure 6. Output characteristics Figure 7. Transfer characteristics

AM12962v1 AM12963v1
ID ID
(A) (A) VDS=15V
VGS=10V
12 10

10
8
8
6V 6
6
4
4
2
2

0 0
0 10 20 VDS(V) 0 2 4 6 8 VGS(V)

6/16 Doc ID 18424 Rev 2

STF6N65K3, STFI6N65K3, STU6N65K3 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

AM12964v1 AM12965v1
VGS RDS(on)
VDS (Ω)
(V) VDD=500V (V) VGS=10V
ID=5.4A 1.35
12
500
VDS 1.30
10 1.25
400
1.20
8
300 1.15
6
1.10
200
4 1.05
1.00
2 100
0.95
0 0 0.90
0 10 20 30 Qg(nC) 0 1 2 3 4 5 ID(A)

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy
AM12966v1 AM12967v1
C Eoss
(pF) (µJ)

5
1000 Ciss
4

100 3

Coss 2
10
Crss
1

1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 VDS(V)

Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature temperature
AM12968v1 AM12969v1
VGS(th) RDS(on)
(norm) (norm)
ID=50µA VGS=10V
1.10 VDS=VGS ID=2.7A
2.5

1.00 2.0

1.5
0.90
1.0
0.80
0.5

0.70 0
-75 -25 25 75 125 TJ(°C) -75 -25 25 75 125 TJ(°C)

Doc ID 18424 Rev 2 7/16

Electrical characteristics STF6N65K3, STFI6N65K3, STU6N65K3

Figure 14. Normalized BVDSS vs temperature Figure 15. Source-drain diode forward
characteristics
AM12970v1 AM12971v1
BVDSS VSD
(norm)
(V)
ID=1mA TJ=-50°C
1.0
1.10
TJ=25°C
0.8
1.05
TJ=150°C
0.6
1.00
0.4

0.95
0.2

0.90 0
-75 -25 25 75 125 TJ(°C) 0 1 2 3 4 5 6 ISD(A)

Figure 16. Maximum avalanche energy vs

temperature
AM12972v1
EAS
(mJ)
ID=5.4 A
100 VDD=50 V

80

60

40

20

0
0 20 40 60 80 100 120 TJ(°C)

8/16 Doc ID 18424 Rev 2

STF6N65K3, STFI6N65K3, STU6N65K3 Test circuits

3 Test circuits

Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test
switching and diode recovery times circuit

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform

V(BR)DSS ton toff

tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

Doc ID 18424 Rev 2 9/16

Package mechanical data STF6N65K3, STFI6N65K3, STU6N65K3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: [Link]. ECOPACK
is an ST trademark.

Table 9. TO-220FP mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

10/16 Doc ID 18424 Rev 2

STF6N65K3, STFI6N65K3, STU6N65K3 Package mechanical data

Figure 23. TO-220FP drawing

7012510_Rev_K_B

Doc ID 18424 Rev 2 11/16

Package mechanical data STF6N65K3, STFI6N65K3, STU6N65K3

Table 10. I2PAKFP (TO-281) mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
D1 0.65 0.85
E 0.45 0.70
F 0.75 1.00
F1 1.20
G 4.95 - 5.20
H 10.00 10.40
L1 21.00 23.00
L2 13.20 14.10
L3 10.55 10.85
L4 2.70 3.20
L5 0.85 1.25
L6 7.30 7.50

Figure 24. I2PAKFP (TO-281) drawing

REV!

12/16 Doc ID 18424 Rev 2

STF6N65K3, STFI6N65K3, STU6N65K3 Package mechanical data

Table 11. IPAK (TO-251) mechanical data

mm.
DIM.
min. typ max.

A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
0.3
B5

c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
L1 0.80 1.20
L2 0.80 1.00
V1 10 o

Doc ID 18424 Rev 2 13/16

Package mechanical data STF6N65K3, STFI6N65K3, STU6N65K3

Figure 25. IPAK (TO-251) drawing

0068771_J

14/16 Doc ID 18424 Rev 2

STF6N65K3, STFI6N65K3, STU6N65K3 Revision history

5 Revision history

Table 12. Document revision history

Date Revision Changes

05-Apr-2011 1 First release

Added new part numbers: STFI6N65K3 in I²PAKFP package and
STU6N65K3 in IPAK packages.
07-Nov-2012 2
Section 2.1: Electrical characteristics (curves) has been updated.
Minor text changes.

Doc ID 18424 Rev 2 15/16

 STF6N65K3, STFI6N65K3, STU6N65K3

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2012 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
[Link]

16/16 Doc ID 18424 Rev 2