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Emitter Follower and Common Emitter Lab

This document provides instructions for a physics lab experiment measuring characteristics of a bipolar junction transistor (BJT) in two circuit configurations: an emitter follower (common collector) amplifier and a common emitter amplifier. For the emitter follower circuit, students are asked to measure voltages and currents, calculate values like beta and effective resistance, and analyze the transistor's behavior. For the common emitter amplifier, students determine operating points, measure gain, and explore the circuit's frequency and voltage ranges. The goal is to better understand how transistors function in these amplifier circuits.

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0% found this document useful (0 votes)
54 views3 pages

Emitter Follower and Common Emitter Lab

This document provides instructions for a physics lab experiment measuring characteristics of a bipolar junction transistor (BJT) in two circuit configurations: an emitter follower (common collector) amplifier and a common emitter amplifier. For the emitter follower circuit, students are asked to measure voltages and currents, calculate values like beta and effective resistance, and analyze the transistor's behavior. For the common emitter amplifier, students determine operating points, measure gain, and explore the circuit's frequency and voltage ranges. The goal is to better understand how transistors function in these amplifier circuits.

Uploaded by

baig79
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Physics 225 Lab: Transistors

INTRODUCTION
The purpose of this lab is to measure some characteristics of a transistor (a bipolar
junction transistor, or BJT) in two useful circuit configurations, the emitter follower
amplifier and the common emitter amplifier.

1 . EMITTER FOLLOWER (COMMON


COLLECTOR) AMPLIFIER
In this section, you will see what the transistor does in an emitter follower circuit and
what the entire circuit does. Construct the emitter follower circuit shown in figure 1.

+12

First, examine the behavior of the transistor.

Set VB to approximately 2, 4, 6, 8, and 10 volts and for each VB measure Vin ,


(accurately), and VE. From this, calculate VB =VB -VE , IB and IE from Ohm's law,
IC = IE – IB, and β =IC/IB. Put all of this in one data table.

To analyze this data, plot IB vs. VBE. This will look like a nearly vertical line, but since
the base-emitter junction is a forward biased diode, it is actually part of diode exponential
curve. On the same graph, plot a calculated diode curve that approximately fits your data.
Also on the same graph, indicate how a straight line can fit these data points fairly well.
This line represents an "effective resistance" RBE for the base of the transistor. From the
slope of this line, calculate RBE using Ohm's law.
Now, looking at the data and the graph, answer these questions: What is the range of
VBE? Does VBE stay at approximately 0.7V? What does it mean for a transistor to be in its
"active region"? Does the transistor stay in its active region? Is IC =IE ? Is β = 100 (within
a factor of 2)? A BJT is often described as a "current amplifier". How is this transistor
functioning as a current amplifier in this circuit?

For your lab report, include the data table, the IB vs. VBE graph with data points and
calculated curves, and a discussion which includes answers to the questions in the
previous paragraph.

Now, examine the behavior of the entire circuit. Replace Vin with a 1kHz sin wave
voltage source vin. Keep the input signal in the range 0V < vin <12 V. (You may need to
use the DC offset on the function generator to keep vin positive.) Monitor vin and vout
simultaneously with the oscilloscope. Note that vout "follows" vin with a small voltage
drop. (The emitter follows the base, hence the name of this configuration.) What is the
voltage gain of this circuit? What might be the use of a circuit with this gain? What
happens to the output signal if vin falls below 0 V? Can you explain this effect? For your
lab report, sketch vin and vout, indicating the voltage drop, give the gain of your amplifier,
and describe what it might be used for. In addition explain why the circuit requires that
vin be a positive voltage signal.

2. COMMON EMITTER AMPLIFIER

In this section, you will build and analyze a common emitter amplifier, a popular
transistor amplifier circuit. Build the amplifier as shown in figure 2 but don't connect the
AC source yet. Just leave vin floating for now.

First, find the bias conditions of the transistor. That is, find the voltages and currents
in the circuit with no input signal. This is also called the "quiescent point", the "operating
point", or the "DC" conditions for the circuit. To do this, measure VB, VE , and VC, use
Ohm's law to calculate I E and IC , calculate IB=IC /β using the β you found in section 1,
and calculate VBE. The purpose of the resistors in the middle of the circuit, the "bias
resistors", is to keep the transistor in its active region all the time. Is the transistor in its
active region now?

Now connect the function generator to vin and use a 1V peak-to-peak 10kHz sine wave as
the input signal. Monitor vin and vout simultaneously with the oscilloscope and sketch
them on the same set of axes. Measure the gain of this amplifier. Compare it to the
calculated gain for this amplifier, RC /RE. Note the phase difference from input to output.
Most amplifiers invert the signals they amplify.
+12 V

Figure 2: A common-emitter amplifier.

Explore the behavior of the amplifier a little more by using different waveforms,
frequencies, and amplitudes for vin . The output of an ideal amplifier should always look
just like the input multiplied by the gain. However, real amplifiers only work correctly
over a limited range of output voltages and frequencies. Determining these ranges is an
important part of understanding an amplifier circuit. See if you can determine
approximately the minimum and maximum frequencies for which the gain is constant.
Also, see if you can determine the range of acceptable output voltages. Try to guess what
causes each of these limits.

For your report, include your DC measurements and calculations with a brief discussion
of whether the transistor is in its active region, a sketch of vin and vout, a comparison of
your measured and calculated gain, and some approximate frequency and voltage limits
with guesses as to their causes.

Extra Credit: Add a 4.7 µF capacitor to the amplifier circuit as shown in figure 2. How
does the voltage gain of the amplifier change? Explain the reason for this change in
voltage gain.

Common questions

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The operational range for output voltage in a common emitter amplifier is determined by the DC bias conditions and the power supply voltage. Having components well within their active region is vital to keep transistors from saturated or cutoff states . To extend this range, designers can adjust RE and RC values to optimize voltage drop across them, ensuring ample VC headroom, stabilize VBE to maintain linearity even at extreme input levels, and select transistors capable of handling wider voltage and current ranges. Additionally, employing feedback networks and selecting lower power supply voltages may decrease total dissipation, extending the effective output range.

A common emitter amplifier exhibits a phase inversion because the input signal applied to the base results in an amplified inverted output at the collector due to transistor's current amplification properties. Input voltage increase reduces VBE, causing lower base current (IB), which consequently decreases collector current (IC) due to β characteristics, hence dropping the collector voltage (VC) and inverting phase . Practically, this characteristic makes such amplifiers suitable for phase reversal applications, used in stages of signal processing where specific phase alignments are needed without altering amplitude characteristics extensively.

The frequency response of a common emitter amplifier is mainly limited by intrinsic capacitive effects such as base-emitter capacitance (C_BE) and collector-base capacitance (C_CB), which introduce phase shifts affecting bandwidth. Parasitic capacitances and RC time constants at certain frequencies define gain roll-off points. These effects cause gain to drop off at higher frequencies and phase distortions including loss at lower limits . Mitigation strategies include using impedance matching to control gain stability, feedback resistor networks for phase adjustments, and selecting components (transistor types) with lower parasitic capacitances to minimize their impact on overall bandwidth response.

The emitter follower circuit inherently has a voltage gain of slightly less than one, meaning vout follows Vin albeit with a small voltage drop due to the forward bias of the base-emitter junction . This configuration allows the output voltage to closely follow the input voltage, therefore, it is called a voltage buffer. The practical application for such a circuit is to provide a high input impedance and low output impedance, making it useful for impedance matching and preventing signal loss in cascade amplification scenarios or interfacing between sources and loads.

Varying the input signal's frequency and waveform affects the common emitter amplifier's output by potentially altering the gain stability. At certain frequencies beyond the bandwidth limits, gain may fall off due to reactive components' phase shifts creating cutoff effects. The intrinsic capacitive elements in the transistor introduce frequency-dependent impedance variations, influencing gain stability. Thus, gain becomes constant only within a specific frequency range where the intrinsic and parasitic capacitances are minimal in influence . Performance alterations, including distortions at extreme frequencies, highlight practical operational bandwidth limitations in circuit design.

In an emitter follower circuit, you observe a small voltage drop from base to emitter, typically around 0.7V, which indicates that the transistor is in its active region. This region allows the transistor to function as a current amplifier, as the emitter current (IE) is a result of the base current (IB) multiplied by the transistor's current gain β (beta), modo evidence that IC = IE - IB, while IC ≈ IE due to high β values where β is calculated as IC/IB . This configuration shows that even though the voltage gain is minimal, the current gain is significant, as evidenced by the small base voltage variations causing larger changes in emitter current, demonstrating the transistor's current amplification capabilities.

Bias resistors in a common emitter amplifier circuit are crucial for setting the appropriate quiescent or operating point by dividing the supply voltage accordingly to establish a stable base voltage (VB). They stabilize the transistor's DC operating point irrespective of β variations among transistors, thus maintaining VBE at approximately 0.7V, ensuring the transistor remains in its active region. This stability allows the amplifier to achieve linear amplification of input signals without distorting the waveform . Without proper biasing, the transistor might enter cutoff or saturation, which diminishes the linear amplification needed for audio or RF signal processing.

To determine if the transistor in a common emitter amplifier is in its active region, you need to measure the base-emitter voltage (VBE) to ensure it's approximately 0.7V and check the bias conditions, specifically the DC voltages and currents at base (VB), emitter (VE), and collector (VC). The bias resistors help maintain this condition. When in the active region, the transistor can amplify signals linearly, providing a phase-inverted, amplified output. If outside the active region, the transistor may enter cutoff or saturation, decreasing linear amplification and increasing distortion.

Adding a capacitor to a common emitter amplifier circuit typically increases the voltage gain by providing a path for AC signals to bypass additional resistances, thereby enhancing amplification at the specified frequency range . This capacitor acts to decouple the AC signal from the DC biasing network by shunting the emitter resistance (RE) in AC analysis. The decreased overall emitter impedance results in increased transconductance for AC signals, hence increasing voltage gain. However, this only holds true within the designed frequency domain, as lower/higher frequencies may influence reactance, affecting gain differently across bandwidth limits.

Introducing an AC signal to a common emitter amplifier impacts circuit performance by shifting the DC operating point and generating an amplified, inverted version of the input signal. This occurs as the AC signal causes the base current to fluctuate, shifting the collector current correspondingly, hence amplifying the input by RC/RE, the resistive load dividing the collector to emitter voltage . Monitoring both input and output simultaneously shows a 180-degree phase shift, characteristic of this amplifier type. The AC analysis includes understanding these phase shifts, gain limits decided by RC, RE values, and transistor’s β (current gain), which are essential for correct performance evaluation.

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