Aim
To draw the 1-V characteristic curve of a p-n junction
in forward bias and reverse
bias.
Apparatus
A p-n junction (semi-conductor) diode, a 3 volt
battery, a 50 volt battery, a high resistance rheostat,
one 0-3 volt voltmeter, one 0-50 volt voltmeter, one
0-100 mA ammeter, one 0-100 µA ammeter, one
way key, connecting wires and pieces of sand paper.
1neory
Forward bias characteristics. When the p -sectio
n of
the diode is connected to positive terminal of a
battery and n-section is connected to negative
terminal of the battery then junction is said to be
forward biased . With increase in bias voltage, the
forward current increases slowly in the beginning
and
then rapidly. At about 0.7 V for Si diode (0.2 V for
Ge),
the current increases suddenly. The value of forw
ard
bias voltage, at which the forward current increas
es
rapidly, is called cut in voltage or threshold voltage
.
Reverse bias characteristics. When the p - section
of
the diode is connected to negative terminal of high
voltage battery and n-section of the diode is
connected to positive terminal of the same battery
,
then junction is said to be reverse biased.
When reverse bias voltage increases, initially the
re is
a very small reverse current flow, which remains
almost con stant with bias . But when reverse bia
s
voltage increases to sufficiently high value, the
reverse current suddenly increases to a large valu
e.
This voltage at which breakdown of junction diod
e
occurs (suddenly large current flow) is called zen
er
breakdown voltage or inverse voltage . The
breakdown voltage may"tarts from one volt to
several hundred volts, depending upon dopant
density and the depletion layer.
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Diagram
p
Potential 9999
Divider + + + +
+
+ e 0
+ +
e+ 0
+
Fis- p-n junction diode-forward biued.
p n
ee00 @@@ @
Potential
Divider + ♦ + + - - - -
- 9999
♦ + + +
@@@
- - -
sovl
L~-...L-------------'
K
Pis- p-n junction diode-reverse biued.
Procedure
For forward-bias
1. Make circuit diagram as shown in diagram.
2. Make all connections neat, clean and tight.
3. Note least count and zero error of voltmeter (V)
and milli-ammeter (mA).
4. Bring moving contact of potential divider
(rheostat) near negative end and insert the key
K. Voltmeter V and milli-ammeter mA will give
zero readin .
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5. Move the contact a little towards positive end
to apply a forward -bias voltage (VF) of
0. 1 V. Current remains zero.
6. Increase the forward -bias voltage upto 0.3 V
for Ge diode. Current remains zero, (It is due to
junction potential barrier of 0.3 V).
7. Increase VF to 0.4 V. Milli-am meter records a
small current.
8. Increase VF in steps of 0.2 V and note the
corresponding current. Current increases first
slowly and then rapidly, till VF become s 0.7 V.
9. Make VF= 0.72 V. The current increases
suddenly. This represents "forward break-
down" stage.
10. If the VF increases beyond "forward breakdown"
stage, the forward current does not change
much. Now take out the key at once.
11 . Record your observations as given ahead.
For reverse-bias
12. Make circuit diagram as shown in diagram .
13. Make all connec tions neat, clean and tight.
14. Note least count and zero error of voltmet er (V)
and micro-a mmete r (µA).
15. Bring moving contact of potentia l divider
(rheostat) near positive end and insert the key
K Voltmet er V and micro-a mmeter µA will give
zero reading .
16. Move the contact towards negative end to
- ias volta e V of 0.5 V, a
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feebly reverse current starts flowing.
17. Increase VR in steps of 0.2 V. Current increases
first slowly and then rapidly till VR becomes 20
V. Note the current.
18. Make VR = 25 V. The current increases
suddenly. This represents "reverse break-down"
stage. Note the current and take out the key at
once.
19. Record your observations as given ahead.
Observations
For forward-bias
Range of voltmeter = ..... V
Least count of voltmeter = .....V
Zero error of voltmeter = .....V
Range of milli-ammeter = .... .mA
Least count of milli-ammeter = ..... mA
Zero error of milli-ammeter = ..... mA
1. Table for forward-bias voltage and
forward current
[Link],No.
"o(OI».
(1)
1. 0 0
2. 0.1 0
3. 0.2 0
4. 0.3 0
5. 0.4 0.5
6. 0.6 1
7. 0.8 2
8. 1.0 3
9. 1.2 15
10. 1.4 7.5
11. 1.6 10
15
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7. Table for forward-bias voltage and
forward current
-&rialNo.
'af<Jk
(1)
1.
r
Forwan:1-biaa Vol-...
~ V,(V)
00
0
- ~~~
•'i ••, ~,.;,,,,
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0
•,
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,
2. 0 .1 0
3. 0.2 0
4. 0.3 0
5. 0.4 0.5
6. 0.6 1
7. 0.8 2
8. 1.0 3
9. 1.2 5
10. 1.4 7.5
11. 1.6 10
12. 1.8 15
13. 2.0 20
14. 2.2 25
15. 2.4 30
Note. The readings are as a sample.
For reverse-bias
Range of voltmeter = ... .. V
Least count of voltmeter = ..... V
Zero error of voltmeter = .... .V
Range of micro-ammeter = ..... µA
Least count of micro-ammeter= ... ..µA
Zero error of micro-ammeter = .... .
2. Table for reverse-bias voltage and
reverse current
1. 0 0
2. 6.0 1
3. 7.0 2
4. 9.0 3
6. 11.0 4
6. 13.0 5
7. 15.0 7
8. 17.0 9
9. 19.0 11
E.
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2. Table for reverse-bias voltage and
reverse current
1. 0 0
2. 5.0 l
3. 7.0 2
,. 9.0 3
5. 11.0 4
6. 13.0 5
7. 15.0 7
8. 17.0 9
9. 19.0 11
10. 21.0 13
11. 23.0 15
12. 25.0 25
Note. The readings are given as a sample.
Calculations
For forward-bias
Plot a graph between forward-bias voltage VF
(column 2) and forward current IF (column 3) taking
VF along X-axis and IF along Y- axis.
This graph is called forward-bias characteristic curve
a junction diode.
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Calculations
For forward-bias
Plot a graph between forwa rd-bia s voltage VF
(colum n 2) and forwa rd current IF (column 3) taking
VF along X-axis and IF along Y-axis .
This graph is called forwa rd-bia s characteristic curve
a juncti on diode.
,,._ Cbanderiatic cune of a juncti,on diode (fonrard-biu).
From graph, For cban p from point A to B
AV,= 2.4 - 2.0 = 0.4 V, 4 I,= 30 - 20 = 10 mA
Hence junction resistance for forward-bias,
r= AV, • 0.4 V =4'°C'bma,
Al, l0mA
For reverse-bias
Plot a graph between reverse-bias voltage VR
(colum n 2) and reverse current IR (column 3) taking
is.
VR along X- axis and IR along Y- ax
characteristic curve
This graph is called reverse- bias
of a jun cti on diode. :.:_r:.; _ J.:..; J ..• l
=·1· •rf. !!.~:. :::t:-;.:.:!.. - / ___. • :.:.;J_-
,.-r~.~ ;:tf!'. ~.:-- ..::;;~--~i -·f··....!L·~:f··•··-':':f:~!:~
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1 --·~1.•: ::,/-
1 - ·• t
·
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M
··: · --r:-· 1 d ;" r,· 1 t·,·
CURVE;Q.F A JUNCTION DIODE
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ReyER~-BfAS ~HARACTE~ISTIC •·•···-;.• ='.,:.'1:·.dl.i : I . •·· I
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.. :1 Scale . .. i. 'i. 5 ·/•·1·1· I ci'v.·ot v-~~::
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·.. -· •- 1 ___ :!.-;..... .. ·. ·-•~+
•1 x ax1s· f ...,
·:; ·. · ·• ~-~ ~1- ·!•·'•fl .
. ~: A/;: .·-:<. ~;;
., ...
-~~;t_ :::<-:-+:~;- . .;.-:.. ·;;:;:.•·:.:
.,,, -~!- .. :· .
{i1
-.•
. Y-a xis. 1 an z 5 µA of IA ;, • ';
1 [!: 1,'.,/; ; t . i ,'
• :
•.
'i • ..
,,"' i
(nv ene -bi u).
Ffs. Characteristic curve ofajunction diode
from graph, for change from point A to B
AVR-= 7.0 -5 .0 = 2 V, AI R= 2- 1
= 1 pA
ne -b ias ,
Hence junction resuat.aoft9 for re ve
AVi 2V
r= R = lµ A =I x 10 'o bm..
·
AIR
Result
bia s= 40 oh ms
Ju nc tio n res ist ance for for ward-
6
an ce for rev ers e- bia s = 2 x 10 oh ms.
Ju nctio n res ist
Precautions
clean and tight.
1. All co nn ec tio ns should be neat,
· · · on ad 1+c bon
2. Key should be used in circuit and opened when
the circuit is not being used.
3. Forward-bias voltage beyond breakdown
should not be applied.
4. Reverse-bias voltage beyond breakdown
should not be applied.
Sources of error
The junction diode supplied may be faulty.
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