Chapter 9 - Thyristors
Prob 9-1
Given: dv/dt = 1000 V/µs and iJ2 = 20 mA. Because d(CJ2)/dt = 0, we can find the critical value
of Cj2 from Eq. (9.6):
𝑖𝑖 𝑗𝑗 2 20 × 10 −3
Cj2 = 𝑑𝑑𝑑𝑑 � = 1000 × 10 6 = 20 𝑝𝑝𝑝𝑝
𝑑𝑑𝑑𝑑
Prob 9-2
Given: Cj2 = 40 pF, iJ2 = 20 mA, C1 = 0.02 µF = 20000 pF
The effective capacitance Ce = Cj2 + C1 = 20040 pF
𝑑𝑑𝑑𝑑 𝑖𝑖𝑗𝑗 2 20 × 10−3
= = = 500 𝑉𝑉/µs
𝑑𝑑𝑑𝑑 𝐶𝐶𝑗𝑗 2 40 × 10−12
𝑖𝑖1 = 𝐶𝐶1 𝑑𝑑𝑑𝑑�𝑑𝑑𝑑𝑑 = 0.02 × 10−6 × 500 × 106 = 10 𝐴𝐴
The total current from the supply, iT = 𝑖𝑖𝑗𝑗 2 + 𝑖𝑖1 = 0.020 + 10 = 10.02 𝐴𝐴
Critical Value of dv/dt is given by as limiting value of charging current is 20 mA,
𝑑𝑑𝑑𝑑 𝑖𝑖 𝑇𝑇 20 × 10−3
= = = 0.998 𝑉𝑉/µs
𝑑𝑑𝑑𝑑 𝐶𝐶𝑒𝑒 20040 × 10−12
Prob 9.3
Given: Cj2 = 30 pF, iJ2 = 20 mA, dv/dt = 400 V/µs
The effective capacitance Ce = Cs + Cj2
𝑑𝑑𝑑𝑑 V 𝑖𝑖 𝑇𝑇 20× 10 −3
𝑑𝑑𝑑𝑑
= 400 µs = = ∴ Ce = 50pF
𝐶𝐶𝑒𝑒 𝐶𝐶𝑒𝑒
∴ 𝐶𝐶𝑠𝑠 = 𝐶𝐶𝑒𝑒 − 𝐶𝐶𝑗𝑗 2 = 50 − 30 = 20 𝑝𝑝𝑝𝑝
Chapter 9 - Thyristors
Page # 9 - 2
Prob 9-4
−6
ITD := 5 R := 10 L := 50⋅ 10 Ls := 0 Vs := 200 δ := 0.7
( a) Vs
Rs := Rs = 40
ITD
−6
Guess Cs := 0.5⋅ 10
Given
R + Rs Cs
Using Eq. (9-18) ⋅ = δ
2 L
Cs := Find Cs ( ) 6
Cs⋅ 10 = 0.039 uF
( b) From Eq. (9-21)
Using Eq. (9-21)
0.632⋅ R⋅ Vs
dv_dt := dv_dt V
= 12.898
(
Cs⋅ R + Rs ) 2
10
6 μs
Prob 9-5
−6
ITD := 5 R := 10 L := 50⋅ 10 Ls := 0 Vs := 179 δ := 0.7
f := 60 ω := 2⋅ π ⋅ f ω = 376.991
( a) Vs
Rs := Rs = 35.8
ITD
−6
Guess Cs := 0.5⋅ 10
Given
R + Rs Cs
Using Eq. (9-18) ⋅ = δ
2 L
Cs := Find Cs ( ) 6
Cs⋅ 10 = 0.047 uF
XL := ω ⋅ L XL = 0.019
Chapter 9 - Thyristors
Page # 9 - 3
1
XC := 4
ω ⋅ Cs XC = 5.678 × 10
−6
Guess Cs := 0.5⋅ 10
Given
R + Rs Cs
Using Eq. (9-18) ⋅ = δ
2 L
Cs := Find Cs ( ) 6
Cs⋅ 10 = 0.047 uF
(
τ := Cs⋅ R + Rs ) τ = 2.14 × 10
−6
Prob 9-6
Ip := 1000 −6 −6 1
t1 := 5⋅ 10 t2 := 5⋅ 10 f := 60 T := T = 0.017
f
IT := ⋅ ⎡⎢ ⋅ t1⋅ Ip + T − t1 − t2 ⋅ Ip + ⋅ t2⋅ Ip⎥⎤
( )
1 1 1
IT = 999.7
T ⎣2 2 ⎦
Prob 9-7
Given: Vs = 25000 V, ∆𝐼𝐼𝐷𝐷 = 15 𝑚𝑚𝐴𝐴, ∆𝑄𝑄 = 175 𝜇𝜇𝐶𝐶, 𝐷𝐷𝐷𝐷𝑝𝑝 = 12%
𝑉𝑉𝐷𝐷(max )= 1200 V, From Eqn. (9.13)
𝑉𝑉
DRF = 1 − 𝑛𝑛𝑠𝑠𝑉𝑉𝐷𝐷𝐷𝐷(max
𝑠𝑠
or 0.12 = 1 − (25000/(ns × 1200))
)
∴ 𝑛𝑛𝑠𝑠 = 23.67 ≅ 24 𝑇𝑇ℎ𝑦𝑦𝑦𝑦𝑖𝑖𝑠𝑠𝑑𝑑𝑦𝑦𝑦𝑦𝑠𝑠
(a) From Eqn. (9.9)
25000 + 23 × 𝐷𝐷 × 15 × 10−3
1200 = ; ∴ 𝐷𝐷 = 11 𝑘𝑘 Ω
24
Chapter 9 - Thyristors
Page # 9 - 4
(b) From Eqn.(9.12)
1 23 × 175 × 10−6
1200 = �25000 + � ; ∴ 𝐶𝐶1 = 1.059 𝜇𝜇𝑝𝑝
24 𝐶𝐶1
Prob 9.8
Given: IL = 750 A, VT1 = 1.5 V at 300 A, VT2 = 1.8 V at 300 A. Total terminal voltage v = VT =
3.0 V
I1 − I2 = 0.075 × 750 = 56.25 A
I1 + I2 = 750 A
I1 = 431.25 A, I2 = 318.75 A
𝑉𝑉𝑇𝑇1 + 𝐷𝐷1 𝐼𝐼1 = 𝑉𝑉𝑇𝑇
𝑉𝑉𝑇𝑇1 + 𝐷𝐷1 𝐼𝐼1 = 𝑉𝑉𝑇𝑇2 + 𝐷𝐷2 𝐼𝐼2 = 𝑉𝑉𝑇𝑇
1.5 + R1×431.25 = 1.8 + R2×318.75
431.25 R1 – 318.75 R2 = 0.3
1.5 + R1×431.25 = 3.0
∴ 𝐷𝐷1 = 1.5/431.25 = 3.478 𝑚𝑚Ω
1.8 + R2×318.75 = 3.0
∴ 𝐷𝐷2 = 1.2/318.75 = 3.764 𝑚𝑚Ω
Prob 9.9
Given: Cj2 = 60 x 10-12 F and iJ2 = 20 mA. Because d(Cj2)/dt = 0, we can find the critical value
of dv/dt from Eq. (9.6):
𝑑𝑑𝑑𝑑 𝑖𝑖𝑗𝑗 2 20 𝑥𝑥 10−3
= = = 333.33 𝑉𝑉/𝜇𝜇𝑠𝑠
𝑑𝑑𝑑𝑑 𝐶𝐶𝑗𝑗 2 60 𝑥𝑥 10−12
Chapter 9 - Thyristors
Page # 9 - 5
Prob 9-10
−6
Ip := 1000 t1 := 5⋅ 10 −6 1
t2 := 5⋅ 10 f := 1000 T := −3
f T = 1 × 10
IT := ⋅ ⎡⎢ ⋅ t1⋅ Ip + T − t1 − t2 ⋅ Ip + ⋅ t2⋅ Ip⎥⎤
( )
1 1 1
IT = 995
T ⎣2 2 ⎦
Prob 9-11
3 −3 −6
Vs := 30⋅ 10 ΔID := 15⋅ 10 ΔQ := 200⋅ 10 ID2 := ΔID
3 −6
R := 47⋅ 10 C1 := 0.47⋅ 10 ns := 20
Using Eq. (9-9)
( a) VDS_max := ⎣
(
⎡ Vs + ns − 1 ⋅ R⋅ ID2 ⎤⎦ ) 3
ns VDS_max = 2.17 × 10
Vs
( b) DRF := 1 −
ns⋅ VDS_max DRF⋅ 100 = 30.868 %
Using Eq. (9-11)
( c)
VDT_max :=
1 ⎡⎢
⋅ Vs +
(
ns − 1 ⋅ ΔQ ⎤
⎥ ) 3
ns ⎢ C1 ⎥ VDT_max = 1.904 × 10
Using Eq. (9-13)
⎣ ⎦
( d) Vs
DRF := 1 −
ns⋅ VDT_max DRF⋅ 100 = 21.229 %
Prob 9-12
3 6 ITD := 200
Vs := 240 R := 10 fs := 1⋅ 10 dv_dt := 250⋅ 10
V
( a) R := s
s Rs = 1.2
ITD
Chapter 9 - Thyristors
Page # 9 - 6
Using Eq. (9-21)
0.632⋅ R⋅ Vs
Cs := 6
Cs⋅ 10 = 0.048 μF
( R + Rs) 2
⋅ dv_dt
Using Eq. (9-22)
1 2
( b) Ps := ⋅ Cs⋅ Vs ⋅ fs Ps = 1.393
2
( c) Psnubber := Ps Psnubber = 1.393
Prob 9-13
Assume VD = 0.5 V
T = 1/f = 1/500 Hz = 2 ms.
From Eq. (9.26), Vp = 0.66 × 30 + 0.5 = 20.3 V.
Let C = 0.5 µF.
From Eqs. (9.24) and (9.25), the limiting values of R are
30 − 20.3
𝐷𝐷 < = 0.646 𝑀𝑀Ω
15 × 10−6
30 − 3
𝐷𝐷 > = 2.7 𝑘𝑘Ω
10 × 10−3
From Eq. (9.23), 2 ms = R × 0.5 µF × ln[1/(1 − 0.66)], which gives R = 3.77 kΩ, which
falls within the limiting values. The peak gate voltage VB1 = Vp = 20.3 V. From Eq. (9.27),
𝑑𝑑 𝑔𝑔 30
RB1 = 𝐶𝐶 = 0.5 = 60 Ω
From Eq. (9.28),
10 4 10 4
RB2 = 𝜂𝜂𝑉𝑉 = = 505 Ω
𝑠𝑠 0.66× 30
Chapter 9 - Thyristors
Page # 9 - 7
Prob 9-14
T = 1/f = 1/2 kHz = 0.5 ms. The peak triggering voltage VRk = Vp = 10 V.
Let C = 0.5 µF.
From Eq. (9.27), Rk = tg/C = 30 µs/0.5 µF = 60 Ω.
From Eq. (9.30), ƞ = Vp/Vs = 10/30 =1/3.
From Eq. (9.31), 0.5 ms = R ×0.5 µF × ln[30/(30 − 10)], which gives R = 2.466 kΩ.
For
IG = 2.5 mA, Eq. (9.32) gives RG = (1 − 1/3)2 × 30/2.5 mA = 8 kΩ. From Eq. (9.33),
R1 =RG/ƞ = 8 kΩ ×3/1 = 24 kΩ
From Eq. (9.34),
R2 =RG/(1 − ƞ) = 8 kΩ ×3/2 = 12 kΩ
Prob 9-15
−6 VGT := 2.5
C := 0.47⋅ 10
Chapter 9 - Thyristors
Page # 9 - 8
Vs := 240 Vm := 2⋅ Vs Vs = 240 Vm = 339.411
f := 50 ω := 2⋅ π ⋅ f f = 50 ω = 314.159
3 3
( a) R := 1.5⋅ 10 R = 1.5 × 10
θ := atan ( 2⋅ π ⋅ f ⋅ C⋅ R)
180
θ⋅ = 12.488
π
Vc := Vs⋅ cos ( θ ) Vc = 234.322 2⋅ Vc = 331.381
⎛⎜ VGT ⎟⎞
α := asin 180
⎜ 2⋅ Vc ⎟ α⋅ = 0.432
⎝ ⎠ π
180
α min := α + θ α min⋅ = 12.921
π
3 4
( b) R := 24⋅ 10 R = 2.4 × 10
θ := atan ( 2⋅ π ⋅ f ⋅ C⋅ R) 180
θ⋅ = 74.241
π
Vc := Vs⋅ cos ( θ ) Vc = 65.18 2⋅ Vc = 92.178
⎛⎜ VGT ⎟⎞
α := asin 180
⎜ 2⋅ Vc ⎟ α⋅ = 1.554
⎝ ⎠ π
180
α max := α + θ α max⋅ = 75.796
π
Chapter 9 - Thyristors
Page # 9 - 9
