DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

1. PN - JUNCTION DIODE V-I CHARACTERISTICS &

SWITCHING APPLICATIONS
Aim
1. To Plot V-I characteristics of PN junction diode both in
i) Forward Bias
ii) Reverse Bias.
2. To calculate the Forward Static and dynamic resistance of the diode at a
particular operating point.
3. To verify the diode switching functionality.

Equipment Required
Name of the
S. No Specifications Quantity
Equipment/ Component
VR (max)=1000V
1 Diode1N4001 1
IR (max)=50mA
Power rating=0.5W
2 Resistor 1KΩ 1
Carbon type
3 Regulated power Supply (0-30)V,1A 1
4 Voltmeters (0-1V),(0-10)V 1
5 Ammeters (0-100)mA, (0-30)μA 1

Circuit Diagram

Fig. 1.1: Forward Bias Fig. 1.2: Reverse Bias

1
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Procedure
a) Forward Bias
1. Connect the circuit as shown in Fig. 1.1.
2. Apply the supply voltage, VIN in steps of 0.1V from 0V to 1V and in steps
of 1V from 1V to 7V.
3. Measure the voltage, VF across the diode from voltmeter and current, IF
through the diode from ammeter for different steps of applied voltage, VIN.
4. Draw a graph between the voltage, VF and current, IF.
5. At suitable operating-point, calculate the static and dynamic resistances of
the diode.

b) Reverse Bias
1. Connect the circuit as shown in Fig. 1.2.
2. Apply the supply voltage, VIN in steps of 0.5V from 0V to 6V.
3. Measure the voltage, VR across the diode from voltmeter and current, I R
through the ammeter for different steps of applied voltage, VIN.
4. Draw a graph between the voltage VR and current IR.

Tabular Forms

Table 1.1: Voltage and current reading of diode under forward bias

Applied voltage, Diode Voltage Diode Current

VIN (volts) VF (Volts) IF (mA )

2
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Table 1.2: Voltage and current reading of diode under reverse bias

Applied voltage, Diode Voltage Diode Current

VIN (Volts) VR (Volts) IR (µA)

Model Characteristics:

Fig. 1.3: VI - Characteristics

3
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Calculations
Forward bias
1. Static Resistance, Rf= V / I=
2. Dynamic Resistance, rf = V / I=
3. Static Resistance, Rr= V / I=
4. Dynamic Resistance, rr = V / I =

Precautions
1. Connections must be done very carefully.
2. Readings should be noted without parallax error.
3. The applied voltage, current should not exceed the maximum rating of the diode.

Result
The V-I Characteristics of PN Junction Diode is verified.

Inference

The cut-in voltage observed in forward bias is 0.36V for the given diode

Questions & Answers

1. Define Cut-in voltage of PN junction diode.

A. The minimum forward voltage at which the diode starts conduction.

2. List the applications of PN-junction diode.

A. Switch, rectifier.

3. Give typical values of cut-in voltage for both Germanium and Silicon.

A. Germanium=0.3V, Silicon =0.7V

4
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

II. To verify the diode switching functionality:

Circuit diagrams

Positive peak clipper circuit

Fig. 1.4: Positive peak clipper

Negative peak Clipper circuit

Fig. 1.5: Negative peak Clipper

Procedure

1. Connect the circuit as per circuit diagram shown in Fig.1.4

2. Obtain a sine wave of constant amplitude 8 V p-p from function generator and
apply as input to the circuit.
3. Observe the output waveform and note down the amplitude at which clipping
occurs.

5
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

4. Draw the observed output waveforms.

1. To obtain the transfer characteristics apply dc voltage at input terminals and vary
the voltage insteps of 1V up to the voltage level more than the reference voltage
and note down the corresponding voltages at the output.
2. Plot the transfer characteristics between output and input voltages.
3. Repeat the steps 1 to 5 for negative peak clipping as in fig 1.5

Model Input and Output Waveforms

Fig. 1.6: input waveform

Fig. 1.7: positive peak clipping

6
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 1.8: negative peak clipping

Precautions
1. Connections must be done very carefully.
2. Readings should be noted without parallax error.
3. The applied voltage, current should not exceed the maximum rating of the diode.

Result
The V-I Characteristics of PN Junction Diode is verified and its switching
applications are observed.

Inference

The cut-in voltage observed in forward bias is 0.36V for the given diode.

The switching action of a diode when it is in forward and reverse bias

conditions and observe that the waveforms are clipped at its cut-in voltage.

Questions & Answers

4. Define Cut-in voltage of PN junction diode.

A. The minimum forward voltage at which the diode starts conduction.

5. List the applications of PN-junction diode.

A. Switch, rectifier.

6. Give typical values of cut-in voltage for both Germanium and Silicon.

A. Germanium=0.3V, Silicon =0.7V

7
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

2. ZENER DIODE CHARACTERISTICS &

REGULATION CHARACTERISTICS
Aim

1. To Plot V-I characteristics of Zener diode both in

i) Forward Bias
ii) Reverse Bias.

2. To plot the load and line regulation characteristics of zener diode.

Equipment Required

Name of the
S. No Specifications Quantity
Equipment/ Component
1 Zener Diode( BZ 7.5) VZ = 7.5V 1
]Power

2 Resistor (1KΩ) rating=0.5W 1

Carbon type
3 Dual Regulated power supply 0-30V,1A 1
4 Voltmeters (0-1)V,( 0-10)V 1
5 Ammeter (0-25)mA 1
6 Decade Resistance box 10Ω - 1MΩ 1

Circuit Diagram

Fig. 2.1: Forward Bias Fig. 2.2: Reverse Bias

8
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 2.3: Voltage Regulator

Procedure
a) Forward Bias
1. Connect the circuit as shown in fig 2.1.
2. Apply the supply voltage, VIN in steps of 0V up to 10V.
3. Measure the voltage across the diode, V F from voltmeter and current, IF
through the ammeter for different steps of applied Voltage, VIN.
4. Draw a graph between the voltage, VF and the current, IF.
5. At suitable operating point, calculate the static and dynamic resistances of the
diode.
b) Reverse Bias
1. Connect the circuit as shown in fig 2.2.
2. Apply the supply voltage, VINfrom0V up to 30V.
3. Measure the voltage across the diode, VR from volt meter and current I R,
through the ammeter for different steps of applied voltage, VIN.
4. Draw a graph between the voltage, VR and current ,IR
c) Load regulation
1. Connect the circuit as shown in fig 2.3.
2. Apply the input voltage, VIN as 12V constant
3. Vary the load resistance, RL from 100 Ω to 10K Ω
4. Measure the voltage across the Zener diode, VO from the voltmeter
5. Draw a graph between the load resistance, RL and output voltage, VO
d) Line regulation
1. Adjust the resistance, RL as 5K Ωconstant
2. Vary the input voltage, VIN from 0V to 15V

9
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

3. Measure the voltage across the Zener diode, VO from the voltmeter
4. Draw a graph between the input voltage, VIN and output voltage, VO

Tabular Forms
Table 2.1: Voltage and current readings of Zener diode under forward
bias
Applied Voltage Diode Voltage Diode Current
VIN(volts) VF(v) IF(mA)

Table 2.2: Voltage and current readings of Zener diode under forward
bias

10
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Applied Voltage Diode Voltage Diode Current

VIN(volts) VF(v) IF(mA)

Table
2.3: Load

regulation
V in =12V
Load resistance, O/P Voltage, Vo
RL(Ω) (V)

11
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Table 2.4: Line regulation

Load Resistance, RL=5KΩ
Input Voltage, Output Voltage,
Vin (V) VO (V)

Model Characteristics

Fig. 2.4: VI – Characteristics of Zener diode

12
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 2.5: Load regulation Fig. 2.6: Line regulation

Precautions
1. Connections must be given very carefully.
2. Readings should be noted without any parallax error.
3. The applied voltage, current should not exceed the maximum ratings of
the Zener diode.

Result
The V-I Characteristics and regulation characteristics of Zener Diode are
verified.

Inference

 The breakdown voltage observed in reverse bias 8.6 V for the given Zener
diode. It provides Constant Voltage by entering into the breakdown region.
 It regulates the output voltage against the variations of line voltage and load

Questions& Answers

1. Define Reverse Break down voltage.

A. The maximum reverse voltage at which the junction breaks down and
sudden raise in current occurs.
2. List the Applications of Zener diode.
A. Constant voltage source, Voltage regulator.

13
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

3. HALF WAVE RECTIFIER

Aim
To observe the working of half wave rectifier with and without capacitor filter &
calculate its ripple factor.

Equipment Required

Name of the
S. No Specifications Quantity
Equipment/ component
1 Transformer 230V/6-0-6V,500mA 1
Power rating=0.5W
2 Resistor(1KΩ) 1
Carbon type

Diode(1N4001 or VR (max)=1000V
3 1
1N4007) IR(max)=50mA
Electrolytic type,
4 Capacitor(1000µF/25V) 1
Voltage rating= 1.6V

Cathode Ray
5 20MHz 1
Oscilloscope
4 ½ digit
6 Digital Multimeter 1

Circuit Diagram

Fig. 3.1: Half wave Rectifier without Filter

14
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 3.2: Half wave Rectifier with Capacitor Filter

Procedure
1. Connect the circuit as shown in Fig 3.1.
2. Apply the supply voltage 230V, 50Hz at the primary winding of the
transformer.
3. Connect the CRO at the secondary winding of the transformer and measure the
maximum voltage (Vm) and time period (T) at the input. Calculate the RMS
input voltage, Vrms=Vm/2
4. Now connect the multimeter at the secondary and measure the rms voltage of
the input signal. The rms voltage measured by both CRO and multimeter must
be same.
5. Now connect the CRO across the load resistor and measure the maximum
voltage, Vm and time period, T of the output voltage.
6. Calculate the rms and average (dc) values of the output signal using the
formula V rms = Vm/ 2 and Vdc=Vavg = Vm/ π and measure the AC and DC
voltages across the load resistor using multimeter and calculate the ripple
factor as r = Vac / V dc
7. Calculate the ripple factor using theoretical formula
r = [ [(Vrms/ Vdc)2 – 1]]1/2
8. Now connect the circuit as shown in fig.5.2. Connect the CRO at output
terminals and measure the both ripple AC voltage and DC voltages. Also
measure the time period of ripple AC voltage.
9. Tabulate the values with filter and without filter and compare.

15
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Observations

Fig. 3.3: Input Waveform

Fig. 3.4: Output Wave form without filter

Fig. 3.5: Output Wave form with filter

Calculations
Input waveform
a) Using CRO
Vm =
Vrms = Vm/√2 =
T=

16
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

b) Using multimeter
Vrms =
Output waveform without filter
a) Using CRO
Vm =
Vrms = Vm/2 =
Vdc = Vm/π =
Ripple factor, r = [ [(Vrms/ Vdc)2 – 1]]1/2 =
b) Using multimeter
Vac =
Vdc =
Ripple factor, r = Vac / Vdc =
Output waveform with filter
a) Using CRO
Vm =
Vrpp=
Vac= Vrpp/4√3 =
Vdc = Vm- Vrpp/2 =
Ripple factor, r = Vac / Vdc =
Charging time period, T1=
Discharging time period, T2=
T= T1+ T2=
b) Using multimeter
Vac =
Vac =
Ripple factor, r = Vac / Vdc =

17
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Tabular form
Table 3.1: Comparison of HWR with and without capacitor filter
With-Out Filter With Filter
Half-Wave
Multimete
Rectifier CRO Multimeter CRO
r
Vac (V)
Vdc (V)
Ripple Factor, r

Precautions
1. Connections must be given very carefully.
2. Readings should be taken without any parallax error.
3. The applied voltage and current should not exceed the max ratings of the
diode.

Result
The input and output wave forms with and without filter are plotted. Ripple
factor is calculated.
Inference
The ripple factor of half wave rectifier with filter is better compared to without
filter.
Questions& Answers
1. Give theoretical values for ripple factor and efficiency
A. r=1.21,η=40.6%
2. That is the need of a Filter circuit
A. The output of rectifier is not pure DC, to provide that filter circuits are used.

18
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

4. FULL WAVE RECTIFIER

Aim
To observe the working of full wave rectifier with and without filter &
calculate its ripple factor

Equipment Required
Name of the
S. No Specifications Quantity
Equipment/ Component
VR (max)=1000V
1 Diode(1N4001) 1
IR(max)=50mA
2 Resistor (1KΩ) 1
230V/6-0-6V,
3 Transformer 1
500mA
4 Capacitor 1000µF/25V 1
5 Cathode Ray Oscilloscope 20MHz 1
6 Digital Multi meter 4 ½ digit 1

Circuit Diagrams

Fig. 4.1: Full wave Rectifier without Filter

19
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 4.2: Full wave Rectifier with Filter

Procedure
1. Connect the circuit as shown in Fig 4.1.
2. Apply the supply voltage 230V, 50Hz at the primary winding of the
transformer.
3. Connect the CRO at the secondary winding of the transformer and measure the
maximum voltage (Vm) and time period (T) at the input. Calculate the RMS
input voltage using Vrms=Vm/√2.
4. Now connect the multimeter at the secondary and measure the rms voltage of
the input signal. The rms voltage measured by both CRO and multimeter must
be same.
5. Now connect the CRO across the load resistor and measure the maximum
voltage, Vm and time period, T of the output voltage. Calculate the rms and
average (dc) values of the output signal using the formule,
V rms = Vm/ √2 and Vdc=Vavg = 2Vm / π.
6. Measure the AC and DC voltages across the load resistor using multimeter and
calculate the ripple factor as r = Vac / V dc
7. Calculate ripple factor using CRO, as r =[ [(Vrms/ Vdc)2 – 1]]1/2
8. Compare the measured ripple factor value with theoretical value.
9. Connect the circuit as shown in Fig 4.2
10. Connect the CRO at output terminals and measure the both ripple AC voltage
and DC voltages. Calculate the ripple factor. Also measure the time period T
of ripple AC voltage.
11. Tabulate the values with filter and without filter.

Observations

20
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 4.3: Input Waveform

Fig. 4.4: Output Wave Form Without Filter

Fig. 4.5: Output Wave form with filter

Calculations
Input waveform
a) Using CRO
Vm =
Vrms = Vm/√2 =
T=
b) Using multimeter
Vrms=
Output waveform without filter
a) Using CRO
Vm =
Vrms = Vm/√2 =
Vdc = 2Vm/π =
Ripple factor, r = [ [(Vrms / Vdc )2 – 1]]1/2 =
b) Using multimeter

21
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Vac =
Vac =
Ripple factor, r = Vac / Vdc =
Output waveform with filter
a) Using CRO
Vm =
Vpp=
Vac= Vpp/2√3 =
Vdc = Vm- Vpp/2 =
Ripple factor, r = Vac / Vdc =
Charging time period, T1=
Discharging time period, T2=
T= T1+ T2=
b) Using multimeter
Vac =
Vac =
Ripple factor, r = Vac / Vdc =

Tabular form
Table 4.1: Comparison of FWR with and without capacitor filter
Full-Wave With Out Filter With Filter
Rectifier CRO Multimeter CRO Multimeter

Vrms (V)
Vdc (V)
Ripple Factor, r

Precautions
1. Connections must be given very carefully.
2. Readings should be taken without any parallax error.
3. The applied voltage and current should not exceed the maximum ratings of the
diode.

22
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Result
Input and output waveform with and without filter of a full wave rectifiers are
observed. The ripple factor with and without filter are calculated.
Inference
The ripple factor of Full wave rectifier with filter is less compared to that without
filter.

Questions & Answers

1. What are the limitations of half wave rectifier
A. Poor efficiency, less ripple factor.
2. Give theoretical values for ripple factor and efficiency of centre tapped full wave
rectifier.
A. r=0.48,η=81.2%

5. COMMON BASE TRANSISTOR CHARACTERISTICS

Aim

1. To plot the input and output static characteristics of transistor in common base
configuration.

23
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

2. To calculate the h-parameters graphically

Equipment required

Name of the
S. No Specifications Quantity
Equipment/Component

Icmax=100mA

1 Transistor (BC107) PD=300mw 1

Vceo=45V,Vbeo=50V

Power rating=0.5W
2 Resistors (1KΩ,100Ω) 1
Carbon type
3 Regulated Power Supply (0-30)V,1A 1
4 Voltmeters (0-1)V, (0-10)V 1
5 Ammeters (0-10)mA 2

Circuit Diagram

Fig. 5 .1: Transistor Common Base Configuration

Procedure

a) Input Characteristics
1. Connect the circuit as shown in fig 5.1.
2. Keep the voltage VCB as constant at 1V by varying VCC.
3. Vary the input voltage, VEE in steps of 1V from 0V to 10V.

24
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

4. Measure the voltage, VBE from voltmeter and current, IE through the
ammeter for different values of input voltages.
5. Repeat the step 3 and 4 for VCE values of 5V and 10V.
6. Draw input static characteristics for tabulated values.
7. Calculate hib and hrb

b) Output Characteristics
1. Fix input emitter current, IE at constant value say at 0mA
2. Vary the output voltage, VCC in steps of1V from 0V to10V.
3. Measure the voltage, VCB from voltmeter and current, IC through the
ammeter for different values of input voltages.
4. Repeat above steps 2and 3 for IE. values of 2mA, 5mA and 10mA
5. Draw output static characteristics for tabulated values.
6. Calculate hfb and hob

Tabular Forms
Table 5.1: CB transistor Input Characteristics
Applie VCB = 1V VCB = 5V VCB = 10V
d
Voltag VBE(V IE(mA VBE(V IE(mA VBE(V IE(mA
e ) ) ) ) ) )
VEE(V)
0
1
2
3
4
5
6
7
8
9
10

25
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Table 5.2: CB Transistor Output Characteristics

Applie IE = 0mA IE = 2mA IE = 3mA
d
Voltag VCB(V IC(mA VCB(V IC(mA VCB(V IC(mA
e ) ) ) ) ) )
VCC(V)
0
1
2
3
4
5
6
7
8
9
10

Model Characteristics

Fig. 5.2: Input Characteristics Fig. 5.3: Output Characteristics

Model Calculations

26
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

a) From Input Characteristics

Input impedance,hib = ΔVBE/ ΔIE at VCB constant =

Reverse voltage gain, hrb= ΔVBE/ ΔVCB at IE constant =
b) From Output Characteristics
Forward current gain, hfb= ΔIC / Δ IB at VCB constant =
Out admittance, hob = ΔIC / ΔVCB at IE constant =
Result
The transistor CB Characteristics are observed and plotted. The h-parameters are
calculated graphically.

Inferences

It is observed from the input characteristics that as V CB increases, the curves

are shifted towards left side due to base width modulation.

Questions & Answers

1. Give collector current equation in CB configuration

A. IC = -α IE +ICBO
2. Give the applications of Transistor
A. Switch, Amplifier
3. What are the operating regions of BJT
A. Active, saturation and cut-off

6. COMMON EMITTER TRANSISTOR

CHARACTERISTICS

27
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Aim

1. To plot the input and output static characteristics of transistor in common

emitter configuration.
2. To calculate the h-parameters graphically

Equipment Required

Name of the
S. No Specifications Quantity
Equipment/Component
Icmax=100mA
1 Transistor (BC 107) PD=300mW 1
Vceo=45V, Vbeo=50V
2 Resistors-39KΩ,1KΩ Power rating=0.5W 1
Carbon type
3 Regulated Power Supply (0-30)V,1A 1
4 Volt meters (0-1)V,( 0-10)V 1
5 Ammeters (0-300)μA, (0-10)mA 1

Circuit diagram

Fig. 6.1: Transistor Common Emitter Configuration

Procedure
a) Input Characteristics

28
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

1. Connect the circuit as shown in fig. 6.1.

2. Keep the voltage VCE as constant at 2V by varying VCC.
3. Vary the input voltage, VBB in steps of 1V from 0V to 10V.
4. Measure the voltage, VBE from voltmeter and current, IB through the
ammeter for different values of input voltages.
5. Repeat the step 3 and 4 for VCE values of 5V and 10V.
6. Draw input static characteristics for tabulated values.
7. At suitable operating point, Calculate hib and hrb

b) Output Characteristics
1. Fix input base current, IB at constant value say at 10μA.
2. Vary the output voltage, VCC in steps of 1V from 0V up to10V.
3. Measure the voltage, VCE from voltmeter and current IC through the
ammeter for different values.
4. Repeat above steps 2and 3 for various values of IB=20µA and 30µA.
5. Draw output static characteristics for tabulated values.
6. Calculate hfb and hob

Tabular forms
Table 6.1: CE transistor Input Characteristics
Applie VCE = 1V VCE = 5V VCE = 10V
d
Voltag IB(µA IB(µA IB(µA
VBE(V) VBE(V) VBE(V)
e ) ) )
VBB(V)
0
1
2
3
4
5

29
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

6
7
8
9
10

Table 6.2: CE transistor Input Characteristics

Applie IB = 10mA IB = 20mA IB = 30mA
d
Voltag VCE(V IC(mA VCE(V IC(mA VCE(V IC(mA
e ) ) ) ) ) )
VCC(V)
0
1
2
3
4
5
6
7
8
9
10
Model Characteristics

30
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 6.2: Input Characteristics Fig. 6.3: Output Characteristics

Calculations

a) From Input Characteristics

Input impedance,hie = ΔVBE/ ΔIB at VCE constant =

Reversv voltage gain,hre= ΔVBE/ ΔVCE at IB constant =

b) From Output Characteristics

Forward current gain, hfe= ΔIC / Δ IB at VCE constant =
Output admittance, hoe = ΔIC / ΔVCE at IB constant =

Precautions
1. Connections must be given very carefully.
2. Readings should be noted without parallax error
3. The applied voltage, current should not exceed the maximum rating of the
given transistor.

Result
Input and output characteristics are observed for the given transistor in
common emitter configuration. The h-parameters are calculated.

Inference
It is observed from the input characteristics that as VCE increases, the curves
are shifted towards right side. This is due to the Early effect.

Questions& Answers
1. List various operating regions of Transistor
A. Active region, cut-off region, and saturation region.
2. List various biasing circuits
A. Fixed bias, collector to base bias, and self-bias.
3. Give Transistor current equation in CE configuration
A. IC =β IB + (1+β) ICEO.

31
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

7. FIELD EFFECT TRANSISTOR CHARACTERISTICS

Aim
1. To plot the drain and transfer characteristics.
2. To calculate the drain dynamic resistance and mutual conductance of the
given FET.

Equipment Required
Name of the
S. No Equipment Specifications Quantity
/Component

1 Diode (1N4001) VR (max.)=1000V 1

IR(max.)=50mA
VDS (max.)= 30V
2 FET (BFW10) VGS (max.)= -30V 1
IG (max.)= 10mA
P(max.)= 300mW
Power
3 Resistor (100Ω) rating=0.5W 1
Carbon type
4 Regulated power supply (0 – 30)V, 1 A 1
5 Voltmeters (0-10)V 2
6 Ammeter (0-15)mA 1
7 Digital Multimeter 4 ½ digit 1

Circuit Diagram

32
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 7.1: FET Characteristics

Procedure
a) Static Drain Characteristics
1. Connect the circuit as shown in fig 7.1.
2. First fix VGS at some value say 0V. Increase the drain voltage VD slowly
in steps. Note drain current for each step. Now change VGS to another
value say -1V and repeat the above.
3. Plot the drain characteristics between VDS on X-axis and ID on Y-axis
4. Use the definitions given in brief theory to calculate the FET parameters
from the characteristics.
b) Transfer characteristics
1. Connect the circuit as shown in fig 7.1.
2. First fix VDS at some value say 5V. Increase the gate voltage V GG in
steps of 0.5V from 0V to 10V. Note drain current for each step. Plot
the transfer characteristics.
Tabular Forms
Table 7.1: Drain Characteristics
Applied VGS= 0V VGS=-1V
Voltage VDS ID VDS ID
VDD(V) (V) (mA) (V) (mA)
0
1
2
3
4
5
6
7
8
9
10

33
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Table 7.2: Transfer Characteristics

Applied voltage VDS = 5 V
VGG (V) VGS (V) ID ( mA )
0 0 12
1
2
3
4
5
6
7
8
9
10

Model Characteristics

Fig. 7.2: Drain Characteristics Fig. 7.3: Transfer characteristics

Calculations
1. Drain resistance, rd = Δ VDS / Δ ID =
2. Trans conductance, gm = Δ ID / ΔVGS =
3. Amplification factor, µ = Δ VDS/Δ VGS =

34
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Result
The drain or output and transfer characteristics are obtained and plotted on the
graph.
Inference
1. Drain dynamic resistance is observed as 346 Ω for the given FET (BFW10).
2. Amplification factor of the given FET (BFW10) is observed
Questions& Answers
1. FET is voltage controlled device. Justify?
A. The voltage at input terminal controls the output current. Hence FET is called
voltage controlled device.
2. Define Pinch off voltage?
A. The drain source voltage at which the drain current become nearly constant is
called Pinch off voltage.

35
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

8. SCR CHARACTERISTICS

Aim

1. To obtain the forward characteristics of SCR.

2. To identify the break over voltage at different gate voltages.

Equipment Required

Name of the
S. No Specifications Quantity
Equipment/Component
IH (max.)=4A
1 SCR(TYN 604) P (max.)=10W 1
VH (max.)=5V
2 Variable resistor 0-10KΩ 1
Power rating=0.5w
3 Resistor - 1KΩ 1
Carbon type

4 Regulated Power Supply (0-30)V,1A 1

5 Ammeters (0-25)mA 2
6 Digital multimeter 4 ½ digit 1
7 Bread Board -- --
Sufficient
8 Connecting wires --
number

Circuit Diagram

36
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig 8.1: SCR Characteristics

Procedure

1. Connect the circuit as shown in Fig 8.1.

2. Initially some gate current is applied by varying the V2.
3. Voltage V1 is slowly varied and different reading of ammeter (IA) and
voltmeter (VAK) are taken.
4. The voltage at which the SCR is triggered and heavy current flows is noted as
VBO, forward breakdown voltage.
5. Now apply the gate current more than IG.
6. Steps 3 & 4 are repeated and note down corresponding currents and voltages.
7. Draw the graph between VAK and IA at different gate currents.

Tabular form

Table 8.1: Voltage and current readings of SCR

Applied IG1 = 3mA IG > IG1
Voltage VAK IA VAK IA
V1 (V) (V) (mA) (V) (mA)
0
1
2
3
4
5
6
7

37
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

8
9
10
11
12
13

Model Characteristics

Fig. 8.2: V-I Characteristics of SCR

Result

The VI-characteristics of SCR are observed and Break over Voltage at

different gate currents is noted.

Inference

It is observed that as applied gate current increases, the forward break over
voltage reduces & the device conducts early.

Questions

1. What are the advantages of Thyristor Family?

A. Low power dissipation.
2. Define the following terms: a) Holding current and b) Forward break over
voltage.

38
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

A. The minimum current at which SCR turns from OFF state to ON state is
called holding current.
The maximum forward voltage at which the current through SCR increases
and voltage across SCR drops is called forward break over voltage.
3. What are the different operating regions of SCR?
A. Forward breakdown region, Reverse breakdown region, and Forward
conduction region.
4. List the applications of SCR?
A. High power applications, switching applications, and controlled device.

9. UJT Characteristics

Aim
To plot the V – I characteristics and observe the Negative resistance region of
Uni – Junction Transistor (UJT).

Equipment Required
Name of the
S. No Specifications Quantity
Equipment/Component
ή= 0.56 –0.75,VEB1=3.5V,
1 UJT 2N2646 VB2E=30V,V(RMS)=60mA, 2
PD(max)=300mW
Power Rating = 0.5W
2 Resistors 100Ω, 1KΩ Each one
Carbon type

Regulated Power Supply (0-30)V,1A 1

3
4 Voltmeter (0 – 10)V 1
5 Ammeter (0 – 10)mA 1
6 Breadboard -- 1
Sufficient
7 Connecting wires ---
number

Circuit Diagram

39
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 9.1: UJT characteristics

Procedure
1. Connect the circuit as per the circuit diagram shown in fig.9.1
2. Keep the supply voltage VBB at 1V. Now vary the supply voltage VEE from 0V
to 1V in steps of 0.2V and in steps of 1V up to 10V.
3. Note down the values of Emitter voltage VEB2 and Emitter current IE for each
value of VEE.
4. Repeat the step 3 by setting VBB to 2V and 5V respectively.
5. Plot the graph between emitter voltage and emitter current for different values
of base voltages (VBB).
6. Now observe the negative resistance region of UJT from the V –I
characteristics.

Model Characteristics

40
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 9.2: V-I characteristics of UJT

Tabular Form
Table 9.1: Voltage and current readings of UJT
Applied VBB = 5V VBB = 7.5V VBB = 10V
voltage
VEE VBE(V) IE(mA) VBE(V) IE(mA) VBE(V) IE(mA)
(V)

2
3
4
5
6
7
8
9
10

Precautions

1. Connections must be given carefully.

2. Readings should be taken without any parallax error.
3. The applied voltage and current should not exceed the maximum ratings of the
given Uni-Junction Transistor.

Result

The V-I characteristics of UJT were plotted and observed its negative
resistance region.
Inference
The negative resistance region is observed
Questions & Answers

1. What is the important property of UJT?

41
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

A. UJT exhibits negative resistance between Peak point voltage and valley
point voltage.

2. What are the applications of UJT?

A. It can be used as Relaxation Oscillator, Time base generators, Sawtooth
signal generator, etc

10. COMMON EMITTER AMPLIFIER

Aim
To plot the frequency response characteristics of CE amplifier
Equipment Required
Name of the
S. No Specifications Quantity
Component/ Equipment
Icmax=100mA

1 Transistor (BC107) PD=300mw 1

Vceo=45V,Vbeo=50V
Resistors (22KΩ, 1KΩ, Power Rating = 0.5W
2
220Ω,5.6KΩ) Carbon type Each one
10μF/25V 2
3 Capacitors
100μF/16V 1
4 Regulated Power Supply (0-30)V,1A 1
5 Cathode Ray Oscilloscope 20 MHz 1
6 Signal Generator (0-1M)Hz 1

Characteristics of CE amplifier
1. Large current gain (AI)
2. Large voltage gain (AV)
3. Large power gain(AP=[Link])
4. Phase shift of 180o

42
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

5. Moderate input & output impedances.

The voltage gain of the amplifier is given calculate the gain in by

Gain = AV = 20 Log VO / VS

Where, Vo is the output voltage.

VS is input voltage of applied AC signal.

Circuit Diagram

Fig. 10.1: Circuit diagram of Transistor Common Emitter Amplifier

Procedure

1. Connect the circuit as shown in Fig 10.1

2. Apply the supply voltage, VCC=12V.
3. Now feed an AC signal VS of 20mV peak to peak at the input of the
amplifier, vary the frequency of input signal ranging from 10HZ to 1MHZ
and measure the amplifier output voltage V0.
4. Now calculate the gain in dB for various input signal frequencies.

43
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

5. Draw a graph with frequency on X-axis and gain dB’s on Y-axis. From
graph, calculate bandwidth.
Tabular form

Table 10.1: Frequency versus voltage gain

Input voltage, VI=20mVpeak-peak

Input Frequency Output Voltage, Gain = AV=20 log (Vo / VI)
(HZ) Vo (V) (dB)
20
50
70
300
500
1K
10K
50K
70K
100K
200K
500K
1M
10M
200M
300M

Model Characteristics:

44
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Fig. 10.2: Frequency response characteristics of common emitter amplifier

Observations

1. Maximum gain (Av) =

2. Lower cutoff frequency (FL) =
3. Upper cutoff frequency (FH) =
4. Band width (B.W) = (FH – FL) =
5. Gain bandwidth product = Av (B.W) =

Precautions
1. Connections must be given very carefully.
2. Readings should be noted without parallax error
3. The applied voltage, current should not exceed the maximum rating of the
given transistor.
Result
The frequency response of characteristics of CE Amplifier are verified and
drawn.

Inference
The bandwidth of given CE amplifier is observed as 38.9MHz

Questions & Answers

45
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

1. What are the characteristics of C.E amplifier?

A. Moderate input and output impedances, High voltage gain, High current
gain and High power gain.
2. What is the main application of CE amplifier?
A. It is mostly used as an Audio Signal Voltage Amplifier.
3. What is meant by Bandwidth of an amplifier?
A. The range of frequency over which gain is equal to or greater than 70.7%
of
maximum gain.
4. Find the phase relation b/w input and output?
A. The phase relation b/w the input and output voltage can be determined when
Vi increases in positive direction. It increases the base emitter voltage V BE. An
increase in VBE raises the level of IC. There by increasing the drop across RC.
VCC = VO+IC RC
=> VO=VCC-ICRC
Thus as Vi increase in positive direction, VC goes in negative direction and
vice versa. This shows that amplifier o/p voltage is 180o out of phase with
input voltage.

11. CC AMPLIFIER

Aim
To plot the frequency response characteristics of CC amplifier.
Equipment Required
Name of the
S. No Specifications Quantity
Component/Equipment
Icmax=100mA,

1 Transistor (BC107) PD=300mw, Vceo=45V, 1

Vbeo=50V

Power Rating = 0.5W

2 Resistors (22KΩ, 1KΩ)
Carbon type Each two
3 Capacitors 10μF/25V 1
25μF/25V 1
4 Regulated Power Supply (0-30V), 1A 1

46
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

5 Cathode Ray Oscilloscope 20 MHz 1

Circuit Diagram

Fig 11.1 : Circuit diagram of Transistor Common Collector Amplifier

Procedure

1. Connect the circuit as shown in fig 11.1

2. Apply the supply voltage , VCC=12V
3. Now feed an AC signal V S of 40mV peak to peak at the input of the
amplifier, vary the frequency of input signal ranging from 10HZ to
1MHZ and measure the amplifier output voltage V0.
4. Now calculate the gain in dBs at various input signal frequencies
5. Draw a graph with frequency in Hz on X-axis and gain in dB on Y-axis.
From graph calculate bandwidth.
Tabular Form

Table 11.1: Frequency versus voltage gain

Input voltage, VS=40mV peak-peak
Output
Input Frequency Gain= AV=20log(Vo /VS)
Voltage

47
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

(Hz) Vo (mV) (dB)

10
15
20
50
100
500
1K
5K
10K
50K
100K
200K

Model Frequency Response

Fig 11.2: Frequency response characteristics of common collector amplifier

Observations
1. Maximum gain (Av) =
2. Lower cutoff frequency (FL) =
3. Upper cutoff frequency (FH) =

48
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

4. Band width (B.W) = (FH – FL) =

5. Gain bandwidth product = Av (B.W) =

Precautions
1. Connections must be given very carefully.
2. Readings should be noted without parallax error.
3. The applied voltage, current should not exceed the maximum rating of the
given transistor.

Result
The frequency response of CC Amplifier characteristics was obtained and bandwidth
is calculated.
Inference
The bandwidth of given CC amplifier is observed as 139.98 KHz
Questions & Answers
1. What is other name of common collector amplifier?
A. Emitter follower.
2. What are the features of CC amplifier?
A. High input impedance, low output impedance, Unity voltage gain & High
current gain.
3. What are the applications of CC amplifier?
A. Buffer amplifier for impedance matching, Used in sweep circuits.

12. UJT RELAXATION OSCILLATOR

Aim: To obtain the characteristics of UJT Relaxation Oscillator.

Apparatus Required:

Name of the Specifications Quantity

Component/Equipment
UJT 2N 2646 1
220Ω 1
Resistors 68KΩ 1
120Ω 1
Capacitor 0.1μF 1
0.01μF 1

49
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

0.001μF 1
Diode 0A79 1
Inductor 130mH 1
CRO 20MHz 1
Function generator 1MHz 1
Regulated Power Supply (0-30V),1A 1

Circuit diagram:

Design equations:

Theoretical Calculations:

Vp = Vγ+(R1/ R1 R2 )Vbb

1. When C=0.1μF

Tc =RC ln(Vbb- Vv/ Vbb- Vp)

Td =R1C=(120)( 0.1μ)=

2. When C=0.01μF

Tc =RC ln(Vbb- Vv/ Vbb- Vp)

Td =R1C=(120)( 0.01μ)=

50
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

3. When C=0.001μF

Tc =RC ln(Vbb- Vv/ Vbb- Vp)

Td =R1C=(120)( 0.01μ)=

Table 12.1: Readings of time period theoretical and practical calculations for
different values of capacitor

Capacitance value Theoretical time Practical time

[Link]
(μF) period period
1 0.1
2 0.01
3 0.001

Procedure:
1) Connect the circuit as shown in figA.
2) Observe the voltage waveform across the capacitor,C.

3) Change the time constant by changing the capacitor values to 0.1μF and 0.001 μF
and observe the wave forms.

4) Note down the parameters, amplitude, charging and discharging periods of the wave
forms

5) Compare the theoretical and practical time periods.

6) Plot the graph between voltages across capacitor with respect to time

Model Characteristics:

51
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Precautions:

1. Connections should be given carefully.

2. Readings should be noted without parallax error.

Result:

Performance and construction of UJT Relaxation Oscillator is observed.

Inference:

Two separate power supplies one for active component and the other for linear network
must be used inorder to increase the linearity of the waveform

Question & Answers :

1. What do you mean by a) voltage time base generator, b) a current time base

Generator?

Ans: Voltage time base generator:The electronic circuit which generates an output
voltagethat varies linearly with time.

2. What is Current time base generator?

Ans: The electronic circuit which generates output current that varies linearly with time.

3. What are the applications of time base generator?

Ans: CRO’s, Radar, television, time modulation, precise time measurements

4. What are the methods of generating a time base waveform?

52
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Ans: Exponential charging, constant current charging, Miller circuit, Bootstrap circuit,
compensating circuits.

53