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Chapter 6 Problems

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100 views12 pages

Chapter 6 Problems

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Pei Yu Chen
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© All Rights Reserved
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‘pn JUNCTION DIODE: I-V CHARACTERISTICS ‘mental !—V characteristics revealed several deviations from the ideal. For a Si diode main- tained at room temperature, the deviations included reverse-bias breakdown, excess current levels under small forward bias and all reverse. biases, and a reduced /—V slope or slope- over at forward biases approaching Vy. Breakdown was associated with avalanching or the Zener process, the excess current with thermal carrier recombination—generation in the depletion region, and the reduced /—V slope at high forward currents with the voltage drop across internal series resistances or possibly high-level injection, Each of the deviation- causing phenomena was described physically, and the more important phenomena were modeled analytically. Information of special note inchided Vjq due to avalanching varies roughly as the inverse of the doping concentration on the lightly doped side of the junction, carrier multiplication leads to an enhanced current far below the breakdown voltage, the R-G current exhibits an expected dependence approaching exp(gV,,/2KT) under forward biasing and is proportional to W under reverse biasing, the R-G current varies as n, while the diffusion current varies as n?, the voltage drop across the internal series resistance reduces the voltage drop across the junction to V, = V, — IR, and high-level injection gives tise to an expected high-current exp(qV,/2KT) operational region that is usually ob- scured by the slope-over associated with series resistance. The development, it should be noted, concentrated on the step junction, Analytical modifications may be required in treat- ing other profiles. In the special considerations section we introduced an analytical approach known as charge control and generalized the ideal diode analysis to accommodate base widths of arbitrary thickness. When the quasineutral width is small compared to a diffusion length, the perturbed carrier distribution was noted to become linear. For extremely small base widths, there is also the possibility of punch-through or complete depletion of the narrow base at a reverse-bias voltage less than Vgy Although we have covered the highlights in this summary, there are other pieces of n—terms, techniques, approximations, equations—that are part of the overall n package. The Part II Supplement and Review does contain a Review List of ‘Terms grouped by chapter. As far as equations are concerned, the ideat diode solution (Faqs 6.29/6.30), the law of the junction (Eq. 6.12), the depletion-edge boundary conditions (Eqs. 6.15/6.18), and the reverse-bias R-G current expression (Eq. 6.43) might be committed to memory. The book should be retained for looking up the remainder of the equations. PROBLEMS: CHAPTER 6 PROBLEM INFORMATION TABLE Complete | Difficulty Suggested Short Problem| wher | Level Point Weighting Description 61 | 614 11100 each part) Teal diode quiz [62 | 624 [1 fio _ Compare actwal-ideal -V 289 290 ‘pn JUNCTION DIODES 63 | 611 9G each part) Band diagram sketches 64 2 2/8 Forward-bias big picture 65 | 612 | 23 [10 Derive Eq, (6.15) using Jy=0 066 | 613 | 2 |10Geachpart | Typical values using diary or” 2/16 (a-10,b-5,e-1) Ideal /-V variation with T 68 z 3 |16 (a3, b-10, €-3) Photodiode IV derivation 269 a a Photodiode J-V plot 610 | 614 | 2 [1002.44 Deduce info from cone. plot 6.11 ? 3 [iz Deduce, plot carrier eone. 06.12 * 3 12 (a-9, b-3), pn diode T-sensor 613 | 622 | 2 |6(@eachpart) Vaa-related calculations 6.14 " 2 |10(@-8,b-2) Breakdown IV (My) 0615 | 623 | 3 (2 Breakdown J-V (MIg_g) 6.16 2 3 [8 Determine elevated T:point 6.17 : 310 Modified Ing 61s | 624 | 3 (9 (@6,b-3) Re-related computations 6.19 “ 3 BS Goa atetes) St | Deduce fy. 1 from JV 6.20 : 2-3 [Is Deduce Rg from I-V 0621 ” 4 _ [40 (a2, b-10, e::0-8, F-4)| Multiple nonideality 1-V 6m | 632 | 3 [10 Pseudo-narrow-base diode 6.23 z 3 [is Narrow/wide diode combo 624 | Pee | Muttipte considerations G.L Ideal Diode Quiz Answer the following questions as concisely as possible. Assume the questions refer to an ideal diode, (a) The forward-bias current is associated with what type of carrier activity? (b) The reverse-bias current is associated with what type of carrier activity? (©) Why is the reverse-bias current expected to be small in magnitude and to saturate at a small reverse voltage? (@) Under reverse biasing, what processes occur in the quasineutral regions adjacent to the depletion region edges? Is it drift and diffusion, diffusion and recombination, genera- tion and diffusion, or generation and drift? CHARACTERISTICS 291 ‘pn JUNCTION DioD! (©) Why can't the minority carrier diffusion equations be used to determine the minority carrier concentrations and currents in the depletion region of a diode? (©) What a priori justification is there for assuming recombination-generation is negli- gible throughout the depletion region? (g) What exactly is a “wide-base” diode? (h) What is the “law of the junction”? (i) Given a semilog plot of the forward bias I-V characteristic, how does one deter- mine I? (j)_ True or false: The reverse-bias saturation current may be alternatively viewed as arising from minority carrier generation in the quasineutral regions. 6.2. Compare (preferably with the aid of sketches) the /-V characteristic derived from an actual Si pn junction diode maintained at room temperature and the theoretical ideal-diode characteristic. In effecting your comparison, carefully note and (as necessary) clarify all deviations from the ideal. Finally, briefly identify the cause of each deviation from the ideal theory. Devote no more than a sentence or two to the cause of each deviation. 6.3 Sketch the energy band diagram for an ideal p*-n step junction diode showing the carrier activity in and near the depletion region when @) Va= ) Va>0. © VA<0. 6.4 Construct a composite energy-band/cireuit diagram analogous to Fig. 6.2 that provides an overall view (the “big picture” view) of carrier activity inside a forward-biased pn junction diode, 6.5. Referring to the V,; derivation in Subsection 5.1.4, show that the Eq. (6.15) boundary condition can be derived by continuing to assume Jyy = O when V, #0. Use the Eq. (5.10) result to eliminate V,, in your expression for n(—2x,).. 6.6 Considering an n*-p silicon step junction (N, = 10!S/em?, 7, = 1076 sec, A = 10-3 cm?) to be ideal, perform calculations to determine typical current levels expected from the device under different temperature and biasing conditions. Invoke the MATLAB diary function to record your work. (a) Compute the ideal diode current at T = 300 K when (i) Vx = 50 V, (ii) Vy = =0.1 V, (ii) Vy = 0.1 V, and (iv) V, = 0.5 V. (b) Assuming 7, does not vary significantly with temperature, repeat part (a) for T= 500 K. 292 ——_pmJUNCTIONDIODES: ©6.7 In this problem we wish to explore how the ideal diode /-V characteristic varies as a function of temperature, Consider an ideal Si p*-n step junction diode with an area A = 10-4 cm?, Np = 1.0 X 10!/em’, and a room temperature h= 10-6 sec. (a) Using the empirical-fit relationship for the hole mobility specified in Exercise 3.1, the n, fit relationship cited in Exercise 2.4(b), and assuming 7, to be temperature-indepen- dent, construct a MATLAB program that computes and plots the ideal /-V characteristic of the diode with temperature T in Kelvin being considered an input variable. Print out a sample plot simultaneously displaying the characteristics associated with T = 295 K, 300 K, and 305 K. (To clearly display both the reverse and forward characteristics, limit the plot axes to —1 V = Vx = 0.2 V and ~2yy = I= SIp. Use the largest Jy to set the current limits when displaying several I-V curves on the same set of coordinates.) (b) Appropriately modify your part (a) program to obtain a semilog plot of /, versus T for 300K = T= 400K. (c) Comment on the part (a) and (b) results. 6.8 Photodiode/Solar Cell ‘A pn junction photodiode is just a pn junction diode that has been specially fabricated and encapsulated to permit light penetration into the vicinity of the metallurgical junction. ‘Commercially available solar cells are in essence large-area pn junction photodiodes de- signed to minimize energy losses. The general form of the similar J-V characteristics ex- hibited by photodiodes and solar cells is readily established by a straightforward modifi- cation of the ideal diode equation Consider an ideal p*-n step junction diode where incident light is uniformly absorbed throughout the device producing a photogeneration rate of G, electron-hole pairs per em®-sec, Assume that low-level injection prevails. (a) What is the excess minority carrier concentration on the n-side a large distance (x ®) from the metallurgical junction. (NOTE: A p,(x >) #0.] (b) The usual ideal diode boundary conditions (Eqs. 6.15 and 6.18) still hold at the edges of the depletion region. Using the revised boundary condition established in part (a) and Eq. (6.18), derive an expression for the /-V characteristic of the p*-m diode under the stated conditions of illumination. As in the derivation of the ideal diode equation, ignore all recombination—generation, including photogeneration, occurring in the de- pletion region. (©) Sketch the general form of the photodiode 1—V characteristics taking in turn G,, = 0, G, = Grp, Gy, = 2Gip, and G, = 4Gyy. Assume the light intensity is high enough to significantly perturb the characteristics when G,, = Gyo. (NOTE: Problem 6.9 can be substituted for this part of the problem.) pn JUNCTION DIODE: J-V CHARACTERISTICS ©6.9 I-V characteristics of a solar cell are approximately modeled by the relationship, T= [ges — 1) + 1, where /;, is the current due to light. 1, is always negative and a voltage-independent con- stant for a given level of illumination, Construct a plot illustrating the general nature of the solar cell characteristics. Setting T = 300 K, simultaneously plot 1//, versus V, for the assumed values of I,/J, = 0, —1, ~2, and —4. Limit V, to -05V = V,=0.1V. 6.10 Figure P6.10 is a dimensioned plot of the steady state carrier concentrations inside a pn step junction diode maintained at room temperature. norp (og scale) Figure P6.10 (a) Is the diode forward or reverse biased? Explain how you arrived at your answer. (b) Do low-level injection conditions prevail in the quasineutral regions of the diode” Ex- plain how you arrived at your answer. ns? (©) What are the p-side and n-side doping concent (@) Determine the applied voltage, V. 6.11 A voltage V, = 23.03(KT/g) is being applied to a step junction diode with n- and p- side dopings of N, = 10!7/em? and Nj, = 10'S/em3, respectively. n, = 10"/cm?. Make a dimensioned log(p and n) versus x sketch of both the majority and minority carrier con- centrations in the quasineutral regions of the device. Identify points 10 and 20 diffusion lengths from the depletion region edges on your sketch. 293 294 © pnJUNCTION DIODES ©6.12 As was confirmed graphically in Problem 6.7, the /-V characteristics of the pn junc~ tion diode are very sensitive to temperature. It should not be too surprising then that there are silicon diodes sold commercially as temperature sensors. To use the diode to measure temperature, it is typically forward-biased with a constant current source and V, is moni- tored as a function of Tas shown in Fig. P6.12. Make the assumption the diode is being operated in the forward bias range where [= /, exp(qV,/K7). Also take the intended range of operation to beO = T¢°C) = 100°C. 1) = constant a SZ Figure P6.12 (a) With [as an input variable, modify the Problem 6.7(b) program to compute and plot V, versus T for 0 = TCC) = 100°C. Print out a sample plot using I = 10-* A. (b) Considering the sensitivity (4V,/d7 in mV/°C) of the sensor, would it be preferable to monitor the temperature using J = 10~* A or = 10-3 A? Support your answer. 6.13 Given a planar p*-n Si step junction diode with an n-side doping of N, = 10!Siem? and T= 300K, determine (a) The approximate Vg of the diode. (b) The depletion width at the breakdown voltage. (©) The maximum magnitude of the electric field in the depletion region at the breakdown voltage. ©6.14 Let us pursue the modeling of carrier multiplication and avalanche breakdown in an otherwise ideal diode. As noted in the text, Eq, (6.35) can be used to correct the ideal diode equation and approximately account for carrier multiplication. 2y is simply replaced by MIq. Moreover, the expected Van due to avalanching varies roughly as N78. A reason- able fit to the Fig. 6.11 dependence for Si diodes is Var * 60(Ng/1016) -075 ‘pn JUNCTION DIODE: IV CHARACTERISTICS where Np is in em™? and Vgp is in volts. Take the Si diode under analysis to be a nearly ideal p*-m step junction maintained at 300 K. (a) Construct a MATLAB program to perform /-V computations that include carrier mul- tiplication and avalanche breakdown. Specifically, compute and plot the modified re- verse bias HI, versus V, characteristic covering the range from — Vgq to 0. (Note the Jg normalization.) Employ m = 6 in your computations and set the axis function parameters to [—1.1*Vq, 0, ~5, 0). Print out a sample characteristic taking Np = 2 X 10!*/em?, Is your plot consistent with the curving approach to breakdown shown in Fig, 6.10(b) and Exercise 6.5? (b) Use your program to explore how the diode characteristic varies as a function of m and the impurity concentration on the lightly doped side of the junction. 6.15 Repeat Problem 6.14 replacing Jy by the reverse bias Iy_g. Normalize the current axis to the magnitude of the current at V, = ~Vgq/2. Run your program setting Np, = 2X 10!S/em?, Compare your plot with Fig. 6.10(b).. 6.16 The diffusion component of the current is expected to dominate in Si diodes at suffi- ciently elevated temperatures. What is a suificiently elevated temperature? To answer this question, suppose one has a Si p*-n step junction diode where Vp = 10'S/em?, 79 = 7, and Lp = 10°? cm for 300 K = T = 500 K. Determine the temperature where Joye Trac at areverse bias of Vi — Va = Von/2. ze 6.17 Inside a Si diode at 300 K a region of width d contains three times as many R-G centers as adjoining regions. This special region, as envisioned in Fig. P6.17, lies totally inside the depletion region when the diode is zero biased. Derive an expression for the R-G current (/,_g) to be expected from the diode when reverse-biased greater than a few KT Iq volts. Record all derivational steps. —w Figure P6.17 295 296 pn JUNCTION DIODES 6.18 Suppose Jy = 10-4 A and Rg = 2.0 in adiode where high-level injection is negli- gible. T= 300K. (a) Determine the forward-bias current at which the applied voltage differs from the ideal by 10%. (b) Repeat part (a) with Rs = 20.0 6.19 Point-by-point forward-bias JV data from a IN7S7 Si pn junction diode maintained at room temperature is listed in Table P6.19 and plotted in Fig. P6.19. Following the pro- cedure outlined in Exercise 6.7, determine Ip), Igy, n,, and n,. Because the line-drawing approach is somewhat subjective, also apply a least squares fit (available in MATLAB) to appropriate segments of the data to determine the fit parameters. Discuss your results. Table P6.19 Va (volts) Lamps) V, (volts) Lamps) 0.02 6.070 x 10-¥0 0.48 3.615 x 10-6 0.04 1.203 x 10- 0.50 5.200 x 10-6 0.06 2.165 x 10-8 0.52 1516 x 10-6 0.08 3.508 x 10-9 0.54 1.122 x 10-5 0.10 5.417 X 10-9 0.56 UTIL x 10-5 0.12 8.210 x 10-9 0.58 2.694 x 10-5 0.14 1.183 x 10-8 0.60 4.426 x 10-3 0.16 1.730 x 10-¢ 0.62 7.587 x 10-5 0.18 2.449 x 10-* 0.64 1.359 x 10-4 0.20 3.416 x 10- 0.66 2.531 x 10-4 0.22 4.764 x 10-8 0.68 4.852 x 10-4 0.24 6.501 x 10-* 0.70 9.444 x 10-# 0.26 8.866 x 10-8 0.72 L841 x 10-3 0.28 1.209 x 10-7 0.74 3.518 x 10-? 0.30 1.666 x 10-7 0.76 6.433 x 10-3 0.32 2.305 x 10-7 0.78 1.103 x 10-2 034 3.201 x 10-7 0.80 1.752 x 10- 0.36 4,462 x 10-7 0.82 2.585 x 10- 0.38 6.285 x 10-7 0.84 3.579 X 10-2 0.40 8.845 x 10-7 0.86 4.706 x 10- 0.42 1.249 x 10-6 0.88 5.941 x 10~ 0.44 L776 x 10-6 0.90 71.264 X 107? 0.46 2.527 x 10-6 pnJUNCTION DIODE: I-VCHARACTERISTICS 297, 19! 103 |g 105, 1 (omps) 107 Va (volts) Figure P6.19 6.20 Following the procedure outlined in Fig. 6.16, determine the Rg value of the IN757 diode characterized by the room temperature data listed in Table P6.19 and plotted in Fig. P6.19. © 6.21 The model shown in Fig. P6.21 is sometimes employed as a generalized representa- tion of real pn junction diodes. The diode symbol is understood to represent the standard ‘model of the device including the diffusion and R-G components of the junction current. ‘The series resistor (Rg) accounts for non-negligible voltage drops in the quasineutral re~ gions and contacts of the diode under high-current conditions. The shunt resistor (Rsj)) accounts for a possible leakage current in the semiconductor external to the pn junction, Note that the current through the pn junction and the voltage drop across the junction are redefined to be J, and V,, respectively. 298 ‘pn JUNCTION DIODES Figure P6.21 (a) Ifthe current through the junction proper is described by the relationship, Jy = Igy(eM/™T — 1) Igq(esem'T — 1) where Zo, and Ig, are constants and typically n, & 1 and n, = 2, confirm that the total current through the diode is described by T= Iqy(etitmth — 1) + Iggenomatr — 1) ¢ YL Rew with V, = Vj + IRy (b) Construct a computer program that can be used to investigate the effect of Rs, Reis, and the size of the current prefactors (Jo, and /y,) on the shape of the observed for- ward-bias I-V,, characteristic. In performing the computation, itis best to obtain -V, data pairs associated with evenly stepped values of V,. Limit your plotted log(J) vs. V, output to 0S V, $1 Vand 10"! AS Js 10-2 A. Employ Ip, = 10" A, Jeg = 10-9 A, ny = 1, ny = 2, Rg = 1.0, Rgy = 10"? ©, and T = 300 K in your initial calculation. (©) Employing a manually controlled computational switch, modify your program so that it computes and simultaneously displays four IV, characteristics associated with four different values of either Rsyy, Rs, To, OF Ig.. Using the same basic set of parameters as specified in part (b), compute and record the !-V,, characteristics resulting from the following variation of parameters: (Rg = 10'2, 109, 108, and 10? © (Ip, = 10-"9 A, gg = 1079 A, Ry = 1.0); Gil) Rg = 1, 10, 10, and 10 0 (Ig, = 10-"9 A, Tog = 10-9 A, Rey = 10!2.0); pn JUNCTION DIODE: |-V CHARACTERISTICS Gif) fgg = 10-8, 10", 10-1, and 107 A gy = 10-8 A, Ry = 1.0, Roy = 107 0); (iv) Ty = 10-8, 10-1, 10-", and 107! A (gg = 10-8 A, Rg = 1.0, Rey = 102), (@) Following the procedure established in Exercise 6.6, construct a subsidiary program that can be used to compute Zo, and Jy, from first principle relationships. Specifically assume a n*=p step junction. Join the subsidiary program to your main program and obtain sample results employing A = 10-2.cm2, Ny = 10'S/om?, and 7, = 7, = To = 10-6 sec. The remainder of the parameters should of course be appropriate for Si at T= 300K. (©) Construct 2 modified version of the part (c) program that displays the computed results on a linear I-V, plot. Limit the linear current axis to 0 = 1S 10? A. Compute and record linear plots of the JV, characteristics resulting from the variation of parame- ters specified in part (c). How do the results here compare with those obtained in part (c)? (8) Generally comment on the results obtained in this problem. 6.22 Consider the special silicon p'*-n step junction diode pictured in Fig. P6.22. Note that © for 0 < x= x, and r, = 0 for x, x, n-side region is Ny, Ney Mra = 100Np, uw f — ode Ny — eee @ © ©) @ © ) 0 m=2em Figure P6.24 What is the junction built-in voltage (Vj,)? What is the diode breakdown voltage (Vag)? ‘What applied voltage is necessary to expand the n-side depletion region edge to =a? If the minority carrier lifetimes are 7p, and 7, in the near-junction and x > x, regions, respectively, what is the 7,)/7,. ratio? Establish an expression or expressions for the diffusion current (Ipyep) flowing in the diode as a function of the applied voltage. To simplify the development, assume Lp, > xy and take the n-side contact to be many Lp, diffusion lengths from the deple- tion region edge. Make a sketch of the expected yx versus V, characteristic when the diode is reverse-biased. Assuming 79) ® 75) for 0 x, establish an expression of expressions for the R-G current (/g_) as a function of the applied voltage when the diode is reverse-biased greater than a few AT/q volts. Make a sketch of the expected reverse-bias Iy_g versus V, characteristic.

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