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General Purpose Silicon Rectifier Specs

This document provides specifications for 1N4001-1N4007 general purpose silicon rectifier diodes. The diodes have a low forward voltage drop and reverse leakage, and can withstand high forward surge currents and temperatures up to 260°C. Key specifications include: - Voltage range of 50-1000V and current rating of 1A - Maximum ratings of 50-1000V for peak reverse voltage and 1.1V typical forward voltage drop at 1A - Operating temperature range of -65°C to +175°C

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100% found this document useful (1 vote)
30 views2 pages

General Purpose Silicon Rectifier Specs

This document provides specifications for 1N4001-1N4007 general purpose silicon rectifier diodes. The diodes have a low forward voltage drop and reverse leakage, and can withstand high forward surge currents and temperatures up to 260°C. Key specifications include: - Voltage range of 50-1000V and current rating of 1A - Maximum ratings of 50-1000V for peak reverse voltage and 1.1V typical forward voltage drop at 1A - Operating temperature range of -65°C to +175°C

Uploaded by

Paola Paola
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

RoHS

1N4001-1N4007

GENERAL PURPOSE SILICON RECTIFIER

FEATURES
Low cost construction
VOLTAGE RANGE
CURRENT

T D
50 to 1000 Volts
1.0 Ampere

,. L
Low forward voltage drop DO-41
.034(0.9)
DIA.
Low reverse leakage .028(0.7)

High forward surge current capability


1.0(25.4)
High temperature soldering guaranteed: MIN
o

O
260 C/10 seconds/0.375 " (9.5mm)lead length
at 5 lbs (2,3kg) tension

C
.205(5.2)
MECHANICAL DATA .165(4.2)

Case: Transfer molded plastic


.107(2.7)
DIA

IC
Epoxy: UL94V-0 rate flame retardant .080(2.0)

Polarity: Color band denotes cathode end 1.0(25.4)


MIN
Lead: Plated axial lead ,solderable per MIL-STD-202E
method 208C

N
Mounting position: Any
Weight: 0.012 ounce,0.33 gram Dimensions in inches and (millimeters)

O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

R
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.

T
For capacitive load derate current by 20%.
IN IN IN IN IN IN IN
SYMBOLS UNITS
4001 4002 4003 4004 4005 4006 4007

C
Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V olts
Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 V olts

E
Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V olts
Maximum Average Forward Rectified Current

L
o I (AV) 1.0 A mp
0.375”(9.5mm) lead length at T A =75 C

E
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on I FSM 30 A mps
rated load (JEDEC Method)

J
Maximum Instantaneous Forward Voltage at 1.0A VF 1.1 V olts
o
Maximum DC Reverse Current 5.0

E
T A =25 C
o IR A mps
at rated DC blocking voltage T A =100 C 50
Maximum Full Load Reverse Current,full cycle
I R(AV) 30 A mps

W
o
average 0.375”(9.5mm) lead length at T L =75 C

Typical Junction Capacitance(NOTE1) CJ 15 pF


O
Typical Thermal Resistance(NOTE2) R JA 50 C/W
O
Operating and Storage Temperature Range T J ,T STG -65 to +175 C
NOTES:
[Link] at 1.0 MHz and applied reverse voltage of 4.0 Volts.
[Link] Resistance from Junction to Ambient at 0.375”(9.5mm) lead length,[Link] mounted with 0.2 " X0.2 "
(5.0X5.0mm)copper pads.

WEJ ELECTRONIC CO. Http:// [Link] E-mail:wej@[Link]


RoHS
1N4001-1N4007

FIG.1-TYPICAL FORWARD CURRENT FIG.2-MAXIMUM NON-REPETITIVE PEAK

D
DERATING CURVE FORWARD SURGE CURRENT

T
1.2
AVERAGE FORWARD CURRENT,

PEAK FORWARD SURGE


1.0 30

,. L
8.3ms Single Half Sine-Wave

0.8 (JEDEC Method) T j=Tjmax

CURRENT,(A)
20
0.6 Single Phase
(A)

Half Wave 60Hz


0.4

O
Resistive or
Inductive Load 10
0.2 0.375 "(9.5mm) Lead Length

C
1 Cycle
0
0 25 50 75 100 125 150 175 0
o 1 2 4 6 8 10 20 40 60 80100
AMBIENT TEMPERATURE,( C)
NUMBER OF CYCLES AT 60 Hz

IC
FIG.3-TYPICAL INSTANTANEOUS FIG.4-TYPICAL REVERSE
FORWARD CHARACTERISTICS CHARACTERISTICS

N
20 20
INSTANTANEOUS REVERSE CURRENT,
INSTANTANEOUS FORWARD CURRENT,

10 10

O
o
Tj=100 C

R
1.0 1.0

T
(uA)
(A)

o
T j=25 C
Pulse Width=300us

C
1% Duty Cycle
0.1 0.1
o
T j=25 C

0.01
0.6 0.8 1.0

L
1.2
E 1.4 1.6 1.8 2.0
0.01
0 20 40 60 80 100 120 140

E
INSTANTANEOUS FORWARD VOLTAGE,(V) PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
FIG.5-TYPICAL JUNCTION CAPACITANCE

J
100
JUNCTION CAPACITANCE,(pF)

E
W
10

o
Tj=25 C
f=1MHz
Vsig=50mVp-p

1
0.1 1.0 10 100

REVRESE VOLTAGE,(V)

WEJ ELECTRONIC CO. Http:// [Link] E-mail:wej@[Link]

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