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2SC2625 NPN Transistor Datasheet

This document provides specifications for the 2SC2625 silicon NPN power transistor from Inchange Semiconductor. The transistor has a TO-3PN package and is suitable for applications such as switching regulators, ultrasonic generators, high frequency inverters, and power amplifiers due to its high voltage, high speed switching, and reliability. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. It also lists thermal and electrical characteristics such as saturation voltages, current gain, and switching times.

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Jaydi Zambrano
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81 views4 pages

2SC2625 NPN Transistor Datasheet

This document provides specifications for the 2SC2625 silicon NPN power transistor from Inchange Semiconductor. The transistor has a TO-3PN package and is suitable for applications such as switching regulators, ultrasonic generators, high frequency inverters, and power amplifiers due to its high voltage, high speed switching, and reliability. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. It also lists thermal and electrical characteristics such as saturation voltages, current gain, and switching times.

Uploaded by

Jaydi Zambrano
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2625

DESCRIPTION
・With TO-3PN package
・High voltage,high speed switching
・High reliability

APPLICATIONS
・Switching regulators
・Ultrasonic generators
・High frequency inverters
・General purpose power amplifiers

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings (Tc=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 450 V

VCEO Collector-emitter voltage Open base 400 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current 10 A

IB Base current 3 A

PC Collector power dissipation TC=25℃ 80 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-C Thermal resistance junction to case 1.55 ℃/W

Free Datasheet [Link]


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2625

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V

VCEO(SUS) Collector-emitter sustaining voltage IC=1A ;IB=0 400 V

V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 450 V

V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.2 V

VBEsat Emitter-base saturation voltage IC=4A ;IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=450V IE=0 1.0 mA

IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA

hFE DC current gain IC=4A ; VCE=5V 10

Switching times

ton Turn-on time 1.0 μs


IC=7.5A; IB1=-IB2=1.5A
ts Storage time RL=20Ω,Pw=20μs 2.0 μs
Duty≤2%
tf Fall time 1.0 μs

Free Datasheet [Link]


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2625

PACKAGE OUTLINE

Fig.2 outline dimensions

Free Datasheet [Link]


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC2625

Free Datasheet [Link]

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