SEMICONDUCTOR KHB9D5N20P/F/F2

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description KHB9D5N20P

A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for electronic ballast and B
A _ 0.2
9.9 +
B 15.95 MAX
switch mode power supplies. Q C 1.3+0.1/-0.05
I D _ 0.1
0.8 +
E _ 0.2
3.6 +
K P F 2.8 +_ 0.1
M G 3.7
L
H 0.5+0.1/-0.05
FEATURES J I 1.5
D _ 0.3
・VDSS=200V, ID=9.5A N N H K
J 13.08 +
1.46

・Drain-Source ON Resistance M
L _ 0.1
1.4 +
_ 0.1
1.27 +
_ 0.2
2.54 +
: RDS(ON)=400mΩ @VGS = 10V N
_
O 4.5 + 0.2
・Qg(typ.)=18.5nC 1 2 3 1. GATE P 2.4 +_ 0.2
2. DRAIN Q _ 0.2
9.2 +
3. SOURCE

TO-220AB
MAXIMUM RATING (Tc=25℃)
KHB9D5N20F
RATING C
A
CHARACTERISTIC SYMBOL KHB9D5N20F UNIT

F
KHB9D5N20P

O
KHB9D5N20F2
E DIM MILLIMETERS

B
A _ 0.2
10.16 +
Drain-Source Voltage VDSS 200 V

G
B _ 0.2
15.87 +
C 2.54 +_ 0.2
Gate-Source Voltage VGSS ±30 V D _ 0.1
0.8 +
E _ 0.1
3.18 +
@TC=25℃ ID 9.5 9.5*
K

F _ 0.1
3.3 +
Drain Current A G _
12.57 + 0.2
L M _ 0.1
Pulsed (Note1) IDP 38 38* R H 0.5 +
J J 13.0 MAX
K _ 0.1
3.23 +
Single Pulsed Avalanche Energy EAS D
180 mJ L 1.47 MAX
(Note 2) M 1.47 MAX
N N H
N 2.54 +_ 0.2
Repetitive Avalanche Energy EAR 8.7 mJ O _ 0.2
6.68 +
(Note 1) Q _ 0.2
4.7 +
R _ 0.2
2.76 +
Peak Diode Recovery dv/dt 1 2 3
Q

[Link] dv/dt 5.5 V/ns

(Note 3) 1. GATE
2. DRAIN
3. SOURCE
Drain Power Tc=25℃ 87 40 W
PD
Dissipation Derate above25℃ 0.7 0.32 W/℃ TO-220IS (1)

Maximum Junction Temperature Tj 150 ℃

KHB9D5N20F2
Storage Temperature Range Tstg -55～150 ℃ A C

Thermal Characteristics
F

S
P

℃/W
E DIM MILLIMETERS
Thermal Resistance, Junction-to-Case RthJC 1.44 3.13 A _ 0.3
10.0 +
B

B _ 0.3
15.0 +
G

Thermal Resistance, Junction-to- _ 0.3

℃/W
C 2.70 +
RthJA 62.5 62.5 D 0.76+0.09/-0.05
Ambient
E Φ3.2 + _ 0.2
* : Drain current limited by maximum junction temperature. L L
R F _ 0.3
3.0 +
K

G _ 0.3
12.0 +
PIN CONNECTION M H 0.5+0.1/-0.05
J

D D J _ 0.5
13.6 +
D K _ 0.2
3.7 +
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N N H N _ 0.1
2.54 +
P _ 0.1
6.8 +
Q _ 0.2
4.5 +
R _ 0.2
2.6 +
S 0.5 Typ
Q

1 2 3
G 1. GATE
2. DRAIN
3. SOURCE

S TO-220IS

2008. 12. 19 Revision No : 2 1/7

 KHB9D5N20P/F/F2

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 200 - - V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃ - 0.19 - V/℃
Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V
Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 1 μA
Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4.75A - 345 400 mΩ
Forward Transconductance gFS VDS=40V, ID=4.75A (Note4) - 6.7 - S
Dynamic
Total Gate Charge Qg - 18.5 23
VDS=160V, ID=9.5A
Gate-Source Charge Qgs - 2.7 - nC
VGS=10V (Note4, 5)
Gate-Drain Charge Qgd - 9 -
Turn-on Delay time td(on) - 11 32
Turn-on Rise time tr VDD=100V, RG=25Ω - 62 135
ns
Turn-off Delay time td(off) ID=9.5A (Note4, 5) - 46 102
Turn-off Fall time tf - 80 170
Input Capacitance Ciss - 387 503
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 96 125 pF
Reverse Transfer Capacitance Crss - 34 45
Source-Drain Diode Ratings
Continuous Source Current IS - - 9.5
VGS<Vth A
Pulsed Source Current ISP - - 38
[Link]
Diode Forward Voltage VSD IS=9.5A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=9.5A, VGS=0V, - 130 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/μs (Note 4) - 0.6 - μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =3mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS ≤9.5A, dI/dt≤300A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.

2008. 12. 19 Revision No : 2 2/7

 KHB9D5N20P/F/F2

Fig1. ID - VDS Fig2. ID - VGS

VGS
TOP : 15.0 V VDS = 40V
10.0 V 250µs Pulse Test
1 8.0 V 1
Drain Current ID (A)

Drain Current ID (A)

10 7.0 V 10
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V

0 150 C
10 0
10
25 C
-55 C

-1
10
-1
-1 0 1 10
10 10 10 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig4. BVDSS - Tj Fig5. RDS(ON) - ID

Normalized Breakdown Voltage BVDSS

1.2 2.0
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250µA

1.1 1.5

1.0 1.0 VGS = 10V

0.9 0.5
VGS = 20V

0.8 0
[Link]
-100 -50 0 50 100 150 0 5 10 15 20 25 30

Junction Temperature Tj ( C) Drain Current ID (A)

Fig6. IS - VSD Fig6. RDS(ON) - Tj

3.0
VGS = 10V
Reverse Drain Current IS (A)

IDS = 5A
2.5
Normalized On Resistance

1
10
2.0

1.5
0
10 1.0

150 C 25 C 0.5

10
-1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)

2008. 12. 19 Revision No : 2 3/7

 KHB9D5N20P/F/F2

Fig7. C - VDS Fig8. Qg- VGS

2500 12 I = 9.5A
Frequency =1MHz D

Gate - Source Voltage VGS (V)

10 VDS = 50V
2000 Ciss
Capacitance (pF)

VDS = 125V
8
1500 VDS = 200V
6
1000 Coss
4
Crss
500 2

0 0
10-1 100 101 0 5 10 15 20

Drain - Source Voltage VDS (V) Gate - Charge Qg (nC)

Fig9. Safe Operation Area Fig10. Safe Operation Area

(KHB9D5N20P) (KHB9D5N20F, KHB9D5N20F2)
Operation in this 102 Operation in this
area is limited by RDS(ON) area is limited by RDS(ON)
102
Drain Current ID (A)

Drain Current ID (A)

100 µs
100µs 101
101
1 ms
1ms

100 10ms
100 10 ms
100ms
100 ms
TC= 25 C DC TC= 25 C
Tj = 150 C Tj = 150 C DC
Single nonrepetitive pulse -1 Single nonrepetitive pulse
10-1 0 1 2
10 2
[Link]
10 10 10 100 101 10
Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V)

Fig11. ID - Tj
12

10
Drain Current ID (A)

0
25 50 75 100 125 150

Junction Temperature Tj ( C )

2008. 12. 19 Revision No : 2 4/7

 KHB9D5N20P/F/F2

Fig12. Transient Thermal Response Curve

Normalized Transient Thermal Resistance
(KHB9D5N20P)
100

Duty=0.5

0.2
PDM
10-1 0.1
t1
0.05
t2
0.02
- Duty Factor, D= t1/t2
0.01 Single Pulse
- Rthjc=1.44
10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

Fig13. Transient Thermal Response Curve

Normalized Transient Thermal Resistance

(KHB9D5N20F, KHB9D5N20F2)
100
Duty=0.5

0.2

0.1
PDM
10-1
0.05 t1

0.02 t2
0.01
Single Pulse - Duty Factor, D= t1/t2
[Link] - Rthjc=3.13
10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

2008. 12. 19 Revision No : 2 5/7

 KHB9D5N20P/F/F2

Fig14. Gate Charge

VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS ID
1.0 mA

VDS
Q
Qgs Qgd
VGS Qg

Fig15. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD
BVDSS

L IAS

0.5 VDSS

25Ω ID(t)
VDS
VDD VDS(t)
10 V VGS
[Link]

Time
tp

2008. 12. 19 Revision No : 2 6/7

 KHB9D5N20P/F/F2

Fig16. Resistive Load Switching

VDS
RL 90%

0.5 VDSS

25 Ω
VDS VGS 10%
tf
td(on) tr
td(off)
10V VGS
ton toff

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

Body Diode Forword Current

DUT ISD
VDS (DUT) di/dt
IF
IRM

IS Body Diode Reverse Current

0.8 x VDSS

driver
VDS Body Diode Recovery dv/dt
(DUT)
VSD
10V VDD
VGS
[Link]

Body Diode Forword Voltage drop

2008. 12. 19 Revision No : 2 7/7