Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 1

Solutions Manual Problem Solutions

Chapter 1
Problem Solutions FG 4πr IJ 3

1.1
4 atoms per cell, so atom vol. = 4
H3K
(a) fcc: 8 corner atoms × 1/8 = 1 atom Then
6 face atoms × ½ = 3 atoms FG 4πr IJ
3

Total of 4 atoms per unit cell

Ratio =
4
H 3 K × 100% ⇒ Ratio = 74%
(b) bcc: 8 corner atoms × 1/8 = 1 atom
3
16 2 r
1 enclosed atom = 1 atom (c) Body-centered cubic lattice
Total of 2 atoms per unit cell
4
d = 4r = a 3 ⇒ a = r
(c) Diamond: 8 corner atoms × 1/8 = 1 atom 3
6 face atoms × ½ = 3 atoms
F 4 rI 3

4 enclosed atoms = 4 atoms Unit cell vol. = a =

H 3K
3

Total of 8 atoms per unit cell

FG 4πr IJ 3

1.2
(a) 4 Ga atoms per unit cell
2 atoms per cell, so atom vol. = 2
H3K
4 Then
Density =
b −8
g 3
⇒
FG 4πr IJ 3

5.65 x10

Density of Ga = 2.22 x10 cm

−3
Ratio =
H 3 K × 100% ⇒
2
Ratio = 68%
F 4r I
22
3

4 As atoms per unit cell, so that

Density of As = 2.22 x10 cm
22 −3
H 3K
(d) Diamond lattice
(b) 8
8 Ge atoms per unit cell Body diagonal = d = 8r = a 3 ⇒ a = r
8 3
Density =
b −8 3
⇒
g F 8r I 3

5.65 x10 Unit cell vol. = a =

H 3K
3

−3
Density of Ge = 4.44 x10 cm
FG 4πr IJ
22
3

1.3
8 atoms per cell, so atom vol. 8
H3K
(a) Simple cubic lattice; a = 2r Then
Unit cell vol = a = (2 r ) = 8r
3 3 3
FG 4πr IJ 3

1 atom per cell, so atom vol. = (1)

FG 4πr IJ
3
Ratio =
H 3 K × 100% ⇒
8
Ratio = 34%
H3K F 8r I 3

Then H 3K
FG 4πr IJ3

Ratio =
H 3 K × 100% ⇒ Ratio = 52.4%
1.4
From Problem 1.3, percent volume of fcc atoms
3
8r is 74%; Therefore after coffee is ground,
(b) Face-centered cubic lattice Volume = 0.74 cm
3

d
d = 4r = a 2 ⇒ a = =2 2r
2
Unit cell vol = a = 2 2 r
3
c h = 16
3
2r
3

3
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 1
Solutions Manual Problem Solutions

Then mass density is

1.5 4.85 x10
−23

ρ= ⇒
(a) a = 5.43 A
°
From 1.3d, a =
8
3
r b2.8x10 g−8 3

ρ = 2.21 gm / cm
3

a 3 (5.43) 3 °
so that r = = = 118
. A
8 8
Center of one silicon atom to center of nearest 1.8
(a) a 3 = 2(2.2 ) + 2(1.8) = 8 A
°
°
neighbor = 2r ⇒ 2.36 A
so that
(b) Number density °
8 a = 4.62 A
−3
= ⇒ Density = 5 x10 cm
22

b
5.43 x10
−8 3
g Density of A =
1
⇒ 1.01x10 cm
22 −3

(c) Mass density b4.62 x10 g −8 3

=ρ=
N ( At . Wt .)
=
b5x10 g(28.09) ⇒22
1 −3
Density of B =
b4.62 x10 g ⇒
22
23 −8
1.01x10 cm
NA 6.02 x10
ρ = 2.33 grams / cm
3
(b) Same as (a)
(c) Same material

1.6 1.9
(a) a = 2 rA = 2(1.02) = 2.04 A
°
(a) Surface density
Now 1 1
= 2 = ⇒
2 rA + 2rB = a 3 ⇒ 2rB = 2.04 3 − 2.04
°
a 2 4.62 x10b−8
g 2
2
so that rB = 0.747 A 14
3.31x10 cm
−2

(b) A-type; 1 atom per unit cell

Same for A atoms and B atoms
1 (b) Same as (a)
Density = ⇒
b
2.04 x10
−8 3
g (c) Same material
23 −3
Density(A) = 118
. x10 cm 1.10
B-type: 1 atom per unit cell, so 1
23 −3 (a) Vol density =
. x10 cm
Density(B) = 118 ao
3

1
1.7 Surface density = 2
ao 2
(b)
° (b) Same as (a)
. + 1.0 ⇒ a = 2.8 A
a = 18
(c) 1.11
12 −3 Sketch
Na: Density = = 2.28 x10 cm
22

b2.8x10 g −8 3

1.12
Cl: Density (same as Na) = 2.28 x10 cm
22 −3
(a)
F 1 , 1 , 1I ⇒ (313)
(d)
Na: [Link]. = 22.99 H 1 3 1K
Cl: At. Wt. = 35.45 (b)
So, mass per unit cell
F 1 , 1 , 1 I ⇒ (121)
1 1
(22.99) + (35.45) H 4 2 4K
= 2 2 −23
23
= 4.85 x10
6.02 x10

4
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 1
Solutions Manual Problem Solutions

1.13 2 atoms −2
= ⇒ 9.88 x10 cm
14
(a) Distance between nearest (100) planes is:
d = a = 5.63 A
° b4.50x10 g −8 2

(ii) (110) plane, surface density,

(b)Distance between nearest (110) planes is:
2 atoms −2
1 a 5.63 = ⇒ 6.99 x10 cm
14

d= a 2=
2 2
=
2 b
2 4.50 x10
−8 2
g
or (iii) (111) plane, surface density,
d = 3.98 A
°
F1 1 I
(c) Distance between nearest (111) planes is: =
H
3⋅ + 3⋅
6 2
=
K4
1
d= a 3=
a
=
5.63 3 2
a
3 4.50 x10
−8 2
b g
3 3 3 2
or or . x10 cm
114
15 −2

°
d = 3.25 A
1.15
1.14 (a)
(a) (100) plane of silicon – similar to a fcc,
Simple cubic: a = 4.50 A
° 2 atoms
surface density = ⇒
(i) (100) plane, surface density,
1 atom
5.43 x10 b
−8 2
g
−2 14 −2
= ⇒ 4.94 x10 cm
14
6.78 x10 cm
b
4.50 x10
−8 2
g (b)
(ii) (110) plane, surface density, (110) plane, surface density,
1 atom −2 4 atoms
⇒ 3.49 x10 cm −2
14
= ⇒ 9.59 x10 cm
14
=
b
2 4.50 x10
−8 2
g b
2 5.43 x10
−8 2
g
(iii) (111) plane, surface density, (c)
1 FI 1 (111) plane, surface density,
3
6 HK
atoms
2 1 =
4 atoms
⇒ 7.83 x10 cm
14 −2
=
1
c h
a 2 ( x)
=
1
⋅a 2 ⋅
a 3
=
3a
2
b
3 5.43 x10
−8 2
g
2 2 2
1 1.16
−2
= ⇒ 2.85 x10 cm
14

b
3 4.50 x10
−8
g 2

then
d = 4r = a 2

(b) 4r 4(2.25) °
Body-centered cubic a= = = 6.364 A
(i) (100) plane, surface density, 2 2
14 −2 (a)
Same as (a),(i); surface density 4.94 x10 cm
4 atoms
(ii) (110) plane, surface density, Volume Density = ⇒

=
2 atoms
⇒ 6.99 x10 cm
14 −2
6.364 x10
−8
b g 3

b
2 4.50 x10
−8 2
g . x10 cm
155
22 −3

(iii) (111) plane, surface density, (b)

14 −2 Distance between (110) planes,
Same as (a),(iii), surface density 2.85 x10 cm
1 a 6.364
(c) = a 2 = = ⇒
Face centered cubic 2 2 2
(i) (100) plane, surface density or

5
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 1
Solutions Manual Problem Solutions

°
4.50 A
1.20
(c)
Surface density b5x10 g(30.98) ⇒ 16

=
2 atoms
=
2
(a) Fraction by weight ≈
b5x10 g(28.06) 22

2a
2
b
2 6.364 x10
−8
g 2
. x10
110
−6

or (b) Fraction by weight

3.49 x10 cm
14 −2
b10 g(10.82) 18

≈
b5x10 g(30.98) + b5x10 g(28.06) ⇒
16 22

1.17 −6
−3
7.71x10
Density of silicon atoms = 5 x10 cm
22
and 4
valence electrons per atom, so 1.21
23 −3
Density of valence electrons 2 x10 cm 1 −3
Volume density = = 2 x10 cm
15
3
d
1.18 So
Density of GaAs atoms −6
d = 7.94 x10 cm = 794 A
°

8 atoms −3
= = 4.44 x10 cm
22 °
We have a O = 5.43 A
b
5.65 x10
−8 3
g So
An average of 4 valence electrons per atom, d 794 d
23 −3 = ⇒ = 146
Density of valence electrons 1.77 x10 cm a O 5.43 aO

1.19
16
2 x10
(a) Percentage = 22
x100% ⇒
5 x10
−5
4 x10 %
15
1x10
(b) Percentage = 22
x100% ⇒
5 x10
−6
2 x10 %

6
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

Chapter 2
Problem Solutions p = 5.4 x10
−25
kg − m / s
−34
2.1 Computer plot h 6.625 x10
λ= = −25
⇒
p 5.4 x10
2.2 Computer plot or
°
λ = 12.3 A
2.3 Computer plot
−17
(ii) K.E. = T = 100 eV = 1.6 x10 J
2.4 −24
p= 2 mT ⇒ p = 5.4 x10 kg − m / s
2πx
For problem 2.2; Phase = − ωt = constant h
λ λ= ⇒ λ = 1.23 A
°

Then p
2π dx dx λ F I (b) Proton: K.E. = T = 1 eV = 1.6 x10
−19
J
⋅
λ dt
− ω = 0 or
dt
= v = +ω
2π p
H K p= 2 mT = b
2 1.67 x10
−27
gb1.6x10 g −19

2πx
For problem 2.3; Phase = + ωt = constant or
λ p = 2.31x10
−23
kg − m / s
Then
2π dx dx λ F I h 6.625 x10
−34

⋅
λ dt
+ ω = 0 or
dt
= v p = −ω
2π H K λ=
p
=
2.31x10
−23
⇒

or
°
2.5 λ = 0.287 A
hc hc (c) Tungsten Atom: At. Wt. = 183.92
E = hν = ⇒λ =
λ E For T = 1 eV = 1.6 x10
−19
J
b g
Gold: E = 4.90 eV = (4.90) 1.6 x10
−19
J
p= 2 mT
So
b6.625x10 gb3x10 g ⇒ 2.54 x10
−34 10 = b
2(183.92 ) 1.66 x10
−27
gb1.6x10 g −19

λ=
−5

(4.90)b1.6 x10 g −19

cm or
−22
p = 313
. x10 kg = m / s
or
λ = 0.254 µm h 6.625 x10
−34

λ= = ⇒
Cesium: E = 1.90 eV = (1.90) 1.6 x10 b −19
g J
or
p 3.13x10
−22

So

λ=
b6.625x10 gb3x10 g ⇒ 6.54 x10
−34 10
−5
λ = 0.0212 A
°

(1.90)b1.6 x10 g −19

cm (d) A 2000 kg traveling at 20 m/s:
p = mv = (2000)(20) ⇒
or
or
λ = 0.654 µm
p = 4 x10 kg − m / s
4

−34
2.6 h 6.625 x10
−19
λ= = ⇒
(a) Electron: (i) K.E. = T = 1 eV = 1.6 x10 J p 4 x10
4

p= 2 mT = b
2 9.11x10
−31
gb1.6x10 g −19 or
λ = 1.66 x10
−28
A
°

or

9
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

2.7 or
3 3 E = 1.822 x10
−22
J ⇒ E = 114
. x10 eV
−3

E avg = kT = (0.0259) ⇒
2 2 Also
or
E avg = 0.01727 eV
b
p = mv = 9.11x10
−31
gb2 x10 g ⇒ 4

−26
p = 1822
. x10 kg − m / s
Now
Now
pavg = 2 mE avg −34
h 6.625 x10
= b
2 9.11x10
−31
g(0.01727)b1.6x10 g −19 λ=
p
=
1822
. x10
−26
⇒

or λ = 364 A
°

−26
pavg = 7.1x10 kg − m / s (b)
−34
Now h 6.625 x10
−34 p= = ⇒
h 6.625 x10 λ 125 x10
−10

λ= = −26
⇒ −26
p 7.1x10 p = 5.3x10 kg − m / s
or Also
°
λ = 93.3 A p 5.3 x10
−26

v= = = 5.82 x10 m / s
4
−31
m 9.11x10
2.8 or
hc v = 5.82 x10 cm / s
6
E p = hν p =
λp Now
Now
pe
2
h 1 FG h IJ 2 E=
1
2
mv =
2 1
2
b9.11x10 gb5.82 x10 g −31 4 2

2m H λ K
Ee = and pe = ⇒ Ee = or
2m λe e −21 −3
E = 1.54 x10 J ⇒ E = 9.64 x10 eV
Set E p = E e and λ p = 10λ e
Then
hc FG h IJ
1
2
FG 10h IJ
1
2 2.10
b6.625x10 gb3x10 g −34 8

2m H λ K
hc
2m H λ K
= =
λp (a) E = hν = = −10
e p λ 1x10
which yields or
100h E = 1.99 x10
−15
J
λp =
2 mc Now

Ep = E =
hc
=
hc
⋅ 2 mc =
2 mc
2
E = e ⋅ V ⇒ 1.99 x10
−15
b
= 1.6 x10
−19
gV
λp 100h 100 so

b gb3x10 g V = 12.4 x10 V = 12.4 kV

3
−31 8 2
2 9.11x10
=
100
⇒
(b) p = 2 mE = b
2 9.11x10
−31
gb1.99 x10 g −15

So −23
−15
= 6.02 x10 kg − m / s
E = 1.64 x10 J = 10.3 keV
Then
−34
h 6.625 x10 °
2.9 λ= = −23
⇒ λ = 0.11 A
p 6.02 x10
(a) E =
1
2
mv =
2 1
2
b9.11x10 gb2 x10 g −31 4 2

10
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

2.11
−34 −34
h 1.054 x10 1.054 x10
(a) ∆p =
∆x
=
10
−6

−28
⇒ (b) ∆t =
b
(1) 1.6 x10 −19 g⇒
∆p = 1.054 x10 kg − m / s or
−16
(b) ∆t = 6.6 x10 s
hcF I = pc p
E=
λ H hK = hc
2.16
So (a) If Ψ1 ( x , t ) and Ψ2 ( x , t ) are solutions to
∆E = c( ∆p) = b3x10 gb1.054 x10 g ⇒ Schrodinger’s wave equation, then
8 −28

or
−h ∂ Ψ1 ( x , t ) ∂Ψ1 ( x , t )
2 2

+ V ( x )Ψ1 ( x , t ) = jh
−20
∆E = 3.16 x10 J ⇒ ∆E = 0.198 eV ⋅
∂x ∂t
2
2m
and
2.12
−h ∂ Ψ2 ( x , t ) ∂Ψ2 ( x , t )
2 2

+ V ( x )Ψ2 ( x , t ) = jh
−34
h 1.054 x10 ⋅
(a) ∆p = = −10
⇒ 2m ∂x
2
∂t
∆x 12 x10 Adding the two equations, we obtain
−26
∆p = 8.78 x10 kg − m / s −h
2
∂
2

(b) ⋅ Ψ1 ( x , t ) + Ψ2 ( x , t )
2m ∂x
2

∆E =
1
⋅
( ∆p)2
=
1
⋅
b8.78x10 g −26 2

⇒
+V ( x ) Ψ1 ( x , t ) + Ψ2 ( x , t )
−29
2 m 2 5 x10 ∂
−23 −4 Ψ1 ( x , t ) + Ψ2 ( x , t )
= jh
∆E = 7.71x10 J ⇒ ∆E = 4.82 x10 eV ∂t
which is Schrodinger’s wave equation. So
2.13 Ψ1 ( x , t ) + Ψ2 ( x , t ) is also a solution.
(a) Same as 2.12 (a), ∆p = 8.78 x10
−26
kg − m / s (b)
If Ψ1 ⋅ Ψ2 were a solution to Schrodinger’s wave
(b)
equation, then we could write

∆E =
1
⋅
( ∆p)2
=
1
⋅
b8.78x10 g −26 2

⇒ −h
2
∂
2

aΨ ⋅ Ψ f + V ( x)aΨ ⋅ Ψ f
−26
2 m 2 5 x10 2m ∂x
2 1 2 1 2

aΨ ⋅ Ψ f
−26 −7
∆E = 7.71x10 J ⇒ ∆E = 4.82 x10 eV ∂
= jh 1 2
∂t
2.14 which can be written as

∆p =
h
=
1.054 x10
−34

= 1.054 x10
−32 −h LMΨ ∂ Ψ + Ψ ∂ Ψ + 2 ∂Ψ ⋅ ∂Ψ OP
2 2
2
2
1 1 2

2m N ∂x ∂x Q
−2
∆x 10 ∂x
1
∂x
2 2 2

p = mv ⇒ ∆v =
∆p
=
1.054 x10
−32

⇒ +V ( x )Ψ ⋅ Ψ = jh Ψ
LM ∂Ψ + Ψ ∂Ψ OP
N ∂t ∂t Q
2 1

m 1500 1 2 1 2

or
−36
Dividing by Ψ ⋅ Ψ we find
−h L 1 ∂ Ψ 1 ∂Ψ ∂Ψ O
1 2
∆v = 7 x10 m/s
1 ∂ Ψ
2 2 2

2.15
M ⋅
2 m N Ψ ∂x
+
Ψ ∂x
2
⋅ + P
Ψ Ψ ∂x ∂x Q
2
2

1
2
1

1 2
1 2

(a) ∆p =
h
=
1.054 x10
−34

⇒
L 1 ∂Ψ + 1 ∂Ψ OP
+V ( x ) = jh M 2 1

∆x 10
−10

−24
N Ψ ∂t Ψ ∂x Q 2 1

∆p = 1.054 x10 kg − m / s

11
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

Since Ψ1 is a solution, then 2.19

z
∞
−h ∂ Ψ1 ∂Ψ1
2 2
1 1 Note that Ψ ⋅ Ψ dx = 1
*
⋅ ⋅ + V ( x ) = jh ⋅ ⋅
2 m Ψ1 ∂x Ψ1 ∂t
2
0

Subtracting these last two equations, we are left Function has been normalized
with (a) Now

−h LM 1 ∂ Ψ + 2 ∂Ψ ∂Ψ OP
2 2
L
P= z M
ao 4
F −xIO
expG J P dx
2
2

2 m N Ψ ∂x Ψ Ψ ∂x ∂ x Q
2
2
2

1 2
1 2

N a 0
H a KQ o o

= jh
1 ∂Ψ2 2
z expG
F −2 x IJdx
ao 4

Ψ2 ∂t
=
a Ha K
o 0 o

Since Ψ2 is also a solution, we may write

2 F −a I F −2 x IJ
expG
ao 4

a H 2 K Ha K
−h
2
1 ∂ Ψ2
2
1 ∂Ψ2 = o

+ V ( x ) = jh o o 0
2 m Ψ2 ∂x Ψ2 ∂t
2
or
Subtracting these last two equations, we obtain L F −2a IJ − 1OP = 1 − expF −1I
P = −1MexpG
−h
⋅
2
∂Ψ ∂Ψ 2
⋅ 1 ⋅ 2 − V ( x) = 0 N H 4a K Q H 2K o
o

2 m Ψ1 Ψ2 ∂x ∂x which yields
This equation is not necessarily valid, which P = 0.393
means that Ψ1 Ψ2 is, in general, not a solution to (b)
Schrodinger’s wave equation. F
P= z G
ao 2
F −xII
expG J J dx
2
2

2.17
H a
ao 4
H a KK o o

Ψ( x , t ) = A sin(πx ) exp( − jωt ) 2

z F −2 x IJdx
expG
ao 2

=
Ha K
z z a
+1 +1

Ψ( x , t ) dx = 1 = A sin (πx )dx

2 2 2 o ao 4 o

−1 −1 2 F −a I F −2 x IJ
expG
ao 2

a H 2 K Ha K
or = o

LM 1 x − 1 sin(2πx)OP +1 o o ao 4

⋅
N 2 4π Q =1 or
2
A
−1
LM F −1I OP
which yields
A = 1 or A = +1 , − 1 , + j , − j
2
P = −1 exp( −1) − exp
N H 2 KQ
which yields
P = 0.239
2.18 (c)
Ψ( x , t ) = A sin(nπx ) exp( − jωt ) F
P = zG
ao
F −xII
expG J J dx
2
2

z
+1

Ψ( x , t ) dx = 1 = A
2 2
z
+1

sin ( nπx )dx

2 Ha 0
H a KK o o

0 0 2
z F −2 x IJdx = 2 F −a I expFG −2 x IJ
expG
ao ao

=
Ha K aH2K Ha K
o
or
LM 1 x − 1 sin(2nπx)OP +1 a o 0 o o o 0

N 2 4nπ Q
2
A ⋅ =1 or
0 P = −1 exp( −2 ) − 1
which yields which yields
2
A = 2 or P = 0.865

A=+ 2 ,− 2,+ j 2,− j 2

12
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

2.20
(a) kx − ωt = constant 2.22
Then
dx dx ω E=
hnπ
2 2 2

=
b1.054 x10 g π n −34 2 2 2

k −ω = 0⇒ = vp = + 2b9.11x10 gb100 x10 g

2 2
2 ma −31 −10

dt dt k
or so
15
. x10
13
E = 6.018 x10 n
−22 2
(J)
vp = = 10 m / s
4

15
. x10
9 or

v p = 10 cm / s
6 E = 3.76 x10 n
−3 2
(eV )
Then
(b) −3
n = 1 ⇒ E1 = 3.76 x10 eV
2π 2π 2π
k= ⇒λ = = −2
λ k . x10
15
9 n = 2 ⇒ E 2 = 1.50 x10 eV
or n = 3 ⇒ E 3 = 3.38 x10 eV
−2

°
λ = 41.9 A
Also 2.23
−34
h 6.625 x10 hnπ
2 2 2

p= = −10
⇒ (a) E =
λ 41.9 x10 2 ma
2

or
p = 158
. x10
−25
kg − m / s =
b1.054 x10 g π n −34 2 2 2

2b9.11x10 gb12 x10 g

−31 −10 2

Now

E = hν =
hc
=
b6.625x10 gb3x10 g −34 8
= 4.81x10 n
−20 2
(J)
λ 41.9 x10
−10
So
−20
or E1 = 4.18 x10 J ⇒ E1 = 0.261 eV
−17
E = 4.74 x10 J ⇒ E = 2.96 x10 eV
2
−19
E 2 = 1.67 x10 J ⇒ E 2 = 1.04 eV
(b)
2.21
ψ ( x ) = A exp − j kx + ωt b g E 2 − E 1 = hν =
hc
λ
⇒λ=
hc
∆E
where or

k=
2 mE
λ=
b6.625x10 gb3x10 g ⇒ −34 8

−19 −20
h 1.67 x10 − 4.18 x10

=
b
2 9.11x10
−31
g(0.015)b1.6x10 g −19

or
λ = 159
. x10 m
−6

−34
1.054 x10 λ = 1.59 µm
or
−1
k = 6.27 x10 m
8

2.24
Now (a) For the infinite potential well

ω=
E
=
b
(0.015) 1.6 x10 −19 g E=
hnπ
2 2 2

⇒n =
2 2 ma E
2

−34
h 1.054 x10 2 ma
2
hπ
2 2

or so
ω = 2.28 x10 rad / s
13

n =
2
b gb10 g b10 g = 182. x10
2 10
−5 −2 2 −2
56

b1.054 x10 g π −34 2 2

or

13
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

n = 1.35 x10
28
2 mE
(b) where K = 2
h
hπ
2 2
Boundary conditions:
∆E = (n + 1)2 − n 2
2 ma
2
+a −a
ψ ( x ) = 0 at x = ,x=
hπ
2 2
2 2
= 2
(2n + 1) So, first mode:
2 ma
or ψ 1 ( x ) = A cos Kx

∆E =
b1.054 x10 g π (2)b1.35x10 g −34 2 2 28

where K =
π
so E1 =
π h
2 2

2b10 gb10 g
2
−5 −2 2
a 2 ma
−30
Second mode:
∆E = 1.48 x10 J ψ 2 ( x ) = B sin Kx
−30
Energy in the (n+1) state is 1.48 x10 Joules 2π 4π h
2 2

larger than 10 mJ. where K = so E 2 = 2

(c) a 2 ma
Quantum effects would not be observable. Third mode:
ψ 3 ( x ) = A cos Kx
2.25
3π 9π h
2 2
For a neutron and n = 1:
where K = so E 3 =
E1 =
hπ
2 2

=
b1.054 x10 gπ −34 2
a 2 ma
2

2b1.66 x10 gb10 g

2 2 Fourth mode:
2 ma −27 −14

ψ 4 ( x ) = B sin Kx
or
4π 16π h
2 2
E1 = 2.06 x10 eV
6
where K = so E 4 = 2
For an electron in the same potential well: a 2 ma

E =
b1.054 x10 g π −34 2 2

2.27
2b9.11x10 gb10 g
1 2
−31 −14
The 3-D wave equation in cartesian coordinates,
for V(x,y,z) = 0
or
∂ ψ ( x , y , z) ∂ ψ ( x , y, z) ∂ ψ ( x , y , z)
2 2 2

E1 = 3.76 x10 eV
9
+ +
∂x ∂y ∂z
2 2 2

2.26 2 mE
ψ ( x , y , z) = 0
+
Schrodinger’s wave equation h
2

∂ ψ ( x) Use separation of variables, so let

2
2m
+ ( E − V ( x ))ψ ( x ) = 0 ψ ( x , y , z ) = X ( x )Y ( y )Z ( z )
∂x
2 2
h
We know that Substituting into the wave equation, we get
a −a
ψ ( x ) = 0 for x ≥ and x ≤ ∂ X
2
∂Y
2
∂ Z
2
2 mE
2 2 YZ + XZ + XY + XYZ = 0
∂x ∂y ∂z
2 2 2 2
−a +a h
V ( x ) = 0 for ≤x≤
2 2 2 mE
Dividing by XYZ and letting k =
2
2
, we
so in this region h
∂ ψ ( x) obtain
2
2 mE
+ ψ ( x) = 0 1 ∂ X 1 ∂Y 1 ∂ Z
2 2 2
∂x
2 2
h (1) ⋅ 2 + ⋅ 2 + ⋅ 2 +k =0
2

Solution is of the form X ∂x Y ∂y Z ∂z

ψ ( x ) = A cos Kx + B sin Kx We may set

14
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

1 ∂ X ∂ X ∂ X
2 2 2

⋅ 2 = − k x so + kx X = 0 + kx X = 0
2 2 2

X ∂x ∂x ∂x
2 2

Solution is of the form Solution is of the form:

X ( x ) = A sin k x x + B cos k x x a f a f a f
X = A sin k x x + B cos k x x a f
Boundary conditions: X (0) = 0 ⇒ B = 0 But X ( x = 0) = 0 ⇒ B = 0
nx π So
and X ( x = a ) = 0 ⇒ k x =
a X = A sin k x x a f
where n x = 1 , 2 , 3 ,... Also, X ( x = a ) = 0 ⇒ k x a = nx π
Similarly, let Where n x = 1 , 2 , 3 , . . .
1 ∂Y 1 ∂ Z nxπ
2 2

⋅ 2 = − k y and ⋅ 2 = −kz So that k x =

2 2

Y ∂y Z ∂z a
Applying the boundary conditions, we find We can also define
nyπ 1 ∂Y
2

⋅ 2 = −k y
2
ky = , n y = 1 , 2 , 3 ,...
a Y ∂y
nπ Solution is of the form
k z = z , nz = 1 , 2 , 3 ,...
a b g
Y = C sin k y y + D cos k y y b g
From Equation (1) above, we have But
−k x − k y − kz + k = 0
2 2 2 2
Y ( y = 0) = 0 ⇒ D = 0
or and
2 mE Y ( y = b) = 0 ⇒ k y b = n y π
kx + k y + kz = k =
2 2 2 2

h
2 so that
so that n yπ
ky =
hπ
bn + n + n g
2 2
b
E ⇒ E n x n y nz =
2 2 2

2 ma
2 x y z Now
2 mE
−kx − k y + =0
2 2
2
2.28 h
For the 2-dimensional infinite potential well: which yields
hπ
2
FG n
2 2 2
nyIJ
2m H a b K
∂ ψ ( x, y)
2
∂ ψ ( x, y)
2
2 mE E ⇒ E nx n y = x
2
+ 2
+ + ψ ( x, y) = 0
∂x ∂y
2 2 2
h
Similarities: energy is quantized
Let ψ ( x , y ) = X ( x )Y ( y ) Difference: now a function of 2 integers
Then substituting,
∂ X
2
∂Y
2
2 mE 2.29
Y +X + XY = 0 (a) Derivation of energy levels exactly the same
∂x ∂y
2 2 2
h as in the text.
Divide by XY
bn − n g
hπ
2 2

So (b) ∆E =
2
2
2
1
2
2 ma
1 ∂ X 1 ∂ Y 2 mE
2 2

⋅ 2 + ⋅ 2 + 2 =0
X ∂x Y ∂y h For n2 = 2 , n1 = 1
Let Then
1 ∂ X
2
3h π
2 2
⋅ 2 = −kx
2
∆E =
X ∂x 2 ma
2

or

15
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

(i) a=4 A
°
∂ψ 1 ( x ) ∂ψ 2 ( x )
(2) =

∆E =
b
3 1.054 x10
−34
gπ
2 2

⇒
∂x x = 0 ∂x x = 0
Applying the boundary conditions to the
b
2 1.67 x10
−27
gb4 x10 g −10 2
solutions, we find
−3 B1 = A2 + B2
∆E = 3.85 x10 eV
K 2 A2 − K2 B2 = − K1 B1
(ii) a = 0.5 cm Combining these two equations, we find

b gπ
2 FG K − K IJ B FG 2 K IJ B
A2 =
HK +K K HK +K K and B1 =
−34 2 2 1 2
3 1.054 x10 2 2
∆E = ⇒
b
2 1.67 x10
−27
gb0.5x10 g −2 2 2

The reflection coefficient is

1 2 1

A A
⇒ R=G
*
F K − K IJ 2

R=
HK +K K
−17 2 2 2 1
∆E = 2.46 x10 eV *
BB 2 2 2 1

The transmission coefficient is

2.30
(a) For region II, x > 0 4 K1 K 2

∂ ψ 2 ( x)
2
2m
+ 2 E − VO ψ 2 ( x ) = 0 a f
T = 1− R ⇒ T =
K1 + K 2 a f 2

∂x
2
h
General form of the solution is 2.31
a f
ψ 2 ( x ) = A2 exp jK2 x + B2 exp − jK2 x a f In region II, x > 0 , we have
a f
ψ 2 ( x ) = A2 exp − K2 x
where
where
K2 =
h
2
2m
E − VO a f K2 =
2 maV − E f O
2
Term with B2 represents incident wave, and h
For VO = 2.4 eV and E = 2.1 eV
term with A2 represents the reflected wave.
Region I, x < 0 R| 2b9.11x10 g(2.4 − 2.1)b1.6x10
K =S
−31 −19
g U|V 1/ 2

∂ ψ 1 ( x)
|T b1.054 x10 g |W
2
2 mE
ψ 1 ( x) = 0
2 2
+ −34

∂x
2 2
h
The general solution is of the form or
a f
ψ 1 ( x ) = A1 exp jK1 x + B1 exp − jK1 x a f K 2 = 2.81x10 m
9 −1

Probability at x compared to x = 0, given by

where
2

K1 =
h
2 mE
2
P=
ψ 2 ( x)
ψ 2 (0)
= exp −2 K2 x a f
°
Term involving B1 represents the transmitted (a) For x = 12 A
wave, and the term involving A1 represents the
reflected wave; but if a particle is transmitted
P = exp −2 2.81x10 b 9
gb12 x10 g ⇒ −10

−3
into region I, it will not be reflected so that P = 118
. x10 = 0.118 %
A1 = 0 . (b) For x = 48 A°
Then
a f
ψ 1 ( x ) = B1 exp − jK1 x
P = exp −2 2.81x10 b 9
gb48x10 g ⇒ −10

ψ ( x ) = A expa jK x f + B expa − jK x f
−10
P = 1.9 x10 %
2 2 2 2 2

(b)
2.32
Boundary conditions:
For VO = 6 eV , E = 2.2 eV
(1) ψ 1 ( x = 0) = ψ 2 ( x = 0)
We have that

16
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

FG E IJ FG1 − E IJ expa−2 K af b
T = 3 exp −2 4.124 x10
9
gb15x10 g −10

HV KH V K
T = 16
O O
2
or
−5
where T = 1.27 x10
2 maV − E f
K = 2
O
2 2.34
h −14
VO = 10 x10 eV , E = 3 x10 eV , a = 10
6 6
m
R| 2b9.11x10 g(6 − 2.2)b1.6x10
=S
−31 −19
g U|V 1/ 2

and m = 1.67 x10

−27
kg
|T b1.054 x10 g −34 2
|W Now
or
−1
K2 =
a
2 m VO − E f
K 2 = 9.98 x10 m
9 2
h
For a = 10
−10
m R| 2b1.67 x10 g(10 − 3)b10 gb1.6x10
=S
−27 6 −19
g U|V 1/ 2

F 2.2 I F1 − 2.2 I exp −2b9.98x10 gb10 g T| b1.054 x10 g W|

H 6 KH 6 K
−10 2
T = 16
9 −34

or
or −1
K 2 = 5.80 x10 m
14
T = 0.50
For a = 10 m
−9 So
F 3 I F1 − 3 I exp −2b5.80x10 gb10 g
H 10K H 10K
−14
T = 16
−9 14
T = 7.97 x10

or
2.33 −5
Assume that Equation [2.62] is valid: T = 3.06 x10
FG E IJ FG1 − E IJ expa−2 K af
T = 16
HV KH V K
O O
2 2.35
Region I, V = 0 ( x < 0) ; Region II,
(a) For m = (0.067 )mo V = VO ( 0 < x < a ) ; Region III, V = 0 ( x > a ) .
a
2 m VO − E f (a) Region I;
K2 =
h
2
a f
ψ 1 ( x ) = A1 exp jK1 x + B1 exp − jK1 x a f
R| 2(0.067)b9.11x10 g(0.8 − 0.2)b1.6x10
−31 −19
g U|V 1/ 2 (incident) (reflected)
= S| b1.054 x10 g |W
Region II;
a f
ψ 2 ( x ) = A2 exp K2 x + B2 exp − K2 x a f
T −34 2

Region III;
or
K 2 = 1.027 x10 m
9 −1 a f
ψ 3 ( x ) = A3 exp jK1 x + B3 exp − jK1 x a f
(b)
Then
F 0.2 I F1 − 0.2 I exp −2b1.027 x10 gb15x10 g In region III, the B3 term represents a reflected

H 0.8 K H 0.8 K
−10
T = 16
9
wave. However, once a particle is transmitted
into region III, there will not be a reflected wave
or which means that B3 = 0 .
T = 0.138 (c)
(b) For m = (1.08)mo Boundary conditions:

R| 2(1.08)b9.11x10 g(0.8 − 0.2)b1.6x10

K =S
−31 −19
g U|V 1/ 2 For x = 0: ψ 1 = ψ 2 ⇒ A1 + B1 = A2 + B2
dψ 1 dψ 2
|T
2
b1.054 x10 g −34 2
|W dx
=
dx
⇒ jK1 A1 − jK1 B2 = K 2 A2 − K2 B2

or For x = a: ψ 2 = ψ 3 ⇒

Then
K 2 = 4.124 x10 m
9 −1
a f
A2 exp K2 a + B2 exp − K2 a = A3 exp jK1a a f a f
And also

17
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

dψ 2 dψ 3 F 2m I aV = E f( E )
dx
=
dx
⇒ =
Hh K 2 O

a f
K2 A2 exp K2 a − K2 B2 exp − K2 a a f or
= jK A expa jK a f F 2m I V FG1 − E IJ ( E ) 2

K K =
Hh K H V K
2 2
1 3 1
1 2 2 O
Transmission coefficient is defined as O

A3 A3
*
Then
T=
A1 A1
*
F 2mV I expa2 K af 2

Hh K
* O
AA 3 3 2 2
so from the boundary conditions, we want to
AA =
LF 2m I V FG1 − E IJ ( E )OP
*
1 1 2
solve for A3 in terms of A1 . Solving for A1 in
16 M
terms of A3 , we find NH h K H V K Q 2 O

*
O

AA
lb K − K g expa K af − expa− K af
+ jA3 =
F E IF E I
3 3

A1 =
2 2

16G J G 1 − J expa −2 K a f
HV KH V K
2 1 2 2
4K K 1 2 2

−2 jK K expa K a f + expa − K a f s expa jK a f

O O
1 2 2 2 2 or finally
We then find that AA F E IF E I
= 16G J G 1 − J expa −2 K a f
*

T=
HV KH V K
3 3

a4 K K f lb K − K g expa K af
*
A3 A3 AA
* 2
A1 A1 =
* 2 2
1 1 O O
2 2 1 2
1 2

− expa − K a f
2
2
2.36

+4 K K expa K a f + expa − K a f r
2 2 2
Region I: V = 0
∂ ψ1
2
1 2 2 2
2 mE
We have ψ1 = 0⇒+
2 maV − E f
∂x
2 2
h
K =
2
h
O
2
ψ 1 = A1 exp jK1 x + B1 exp − jK1 x a f a f
(incident wave) (reflected wave)
and since VO >> E , then K 2 a will be large so
2 mE
that where K1 =
a f a f
2
h
exp K2 a >> exp − K2 a
Region II: V = V1
Then we can write
∂ ψ2
2
fψ = 0 ⇒ a
2 m E − V1

a4 K K f lb K − K g expa K af
*
A3 A3 2
+
A1 A1 =
* 2 2
2
∂x
2 2
2 2 1 2
h
ψ = A expa jK x f + B expa − jK x f
1 2

+4 K K expa K a f r
2 2 2 2 2 2 2 2
1 2 2
(transmitted (reflected
which becomes wave) wave)
a f
a4 K K f b K + K g expa2 K af
*
A3 A3 2 m E − V1
A1 A1 =
* 2 2
2 2 1 2 where K 2 = 2
1 2 h
Substituting the expressions for K1 and K2 , we Region III: V = V2
find
2 mVO
∂ ψ3
2
a fψ = 0 ⇒+
2 m E − V2
3
∂x
2 2
K1 + K2 =
2 2
h
ψ = A expa jK x f
2
h
3 3 3
and
LM a
2 m VO − E 2 mE f OL O
PQMN PQ
(transmitted wave)
2 ma E − V f
K1 K 2 =
N
2 2
2 2
h h where K = 3 2
2

h
There is no reflected wave in region III.

18
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

The transmission coefficient is defined as (b)

v 3 A3 A3 K AA
* * Boundary conditions:
T= ⋅ *
= 3 ⋅ 3 3* x = 0: ψ 1 = ψ 2 ⇒ B1 = B2
v1 A1 A1 K1 A1 A1
∂ψ 1 ∂ψ 2
From boundary conditions, solve for A3 in terms = ⇒ K1 B1 = K 2 A2
∂x ∂x
of A1 . The boundary conditions are:
x = a: ψ 2 = ψ 3 ⇒
x = 0: ψ 1 = ψ 2 ⇒ A1 + B1 = A2 + B2
A2 sin K2 a + B2 cos K2 a = 0
∂ψ 1 ∂ψ 2 or
= ⇒ K1 A1 − K1 B1 = K 2 A2 − K2 B2
∂x ∂x B2 = − A2 tan K 2 a
x = a: ψ 2 = ψ 3 ⇒ (c)
a f
A2 exp jK2 a + B2 exp − jK2 a a f FG K IJ B
a f K1 B1 = K2 A2 ⇒ A2 =
HK K
1
1
= A3 exp jK3 a 2

∂ψ 2 ∂ψ 3 and since B1 = B2 , then

= ⇒
∂x ∂x FG K IJ B
a f f
K2 A2 exp jK2 a − K2 B2 exp − jK2 a a A2 =
HK K
1
2

= K A expa jK a f
2

3 3 3 From B = − A tan K a , we can write

2

FK I
2 2
But K a = 2 nπ ⇒
expa jK a f = expa − jK a f = 1 B = − G J B tan K a
2

HK K
1
2 2 2
2 2
2
Then, eliminating B1 , A2 , B2 from the above which gives
equations, we have
FK I
1 = − G J tan K a
HK K
2 1
K3 4 K1 4 K1 K 3 2
T=
K1
⋅
aK + K f1 3
2
⇒ T=
aK + K f 1 3
2 2

In turn, this equation can be written as

1= −
V −E O
L 2mE ⋅ aOP
tan M
2.37
(a) Region I: Since VO > E , we can write
E N h Q 2

∂ ψ1
2

−
a
2 m VO − E fψ =0
or
L 2mE ⋅ a OP
= − tan M
1
E
∂x
2 2
h
Region II: V = 0 , so V −E O N h Q 2

∂ ψ2
2
2 mE This last equation is valid only for specific
+ ψ2 = 0 values of the total energy E . The energy levels
∂x
2 2
h are quantized.
Region III: V → ∞ ⇒ ψ 3 = 0
The general solutions can be written, keeping in 2.38
mind that ψ 1 must remain finite for x < 0 , as − mo e
4

a f
ψ 1 = B1 exp + K1 x En =
a 4π ∈ f 2 h n ( J ) 2 2 2

= A sina K x f + B cosa K x f
o
ψ2 3
2 2 2 2
me
=
a4π ∈ f 2h n (eV )
o
ψ3 = 0 2 2 2

where o

a f −b 9.11x10 gb1.6 x10 g

−31 −19 3

2 m VO − E 2 mE
K1 = and K 2 = = ⇒
4π b8.85 x10 g 2b1.054 x10 g n
2 2 −12 2 −34 2 2
h h
−13.58
En = 2
(eV )
n
Then

19
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 2
Solutions Manual Problem Solutions

n = 1 ⇒ E1 = −13.58 eV dψ 100 F 1 I F −r I
⋅ G J r expG J
−1
5/ 2

π Ha K Ha K
=
2 2
r
n = 2 ⇒ E 2 = −3.395 eV dr o o

n = 3 ⇒ E 3 = −1.51 eV so that
n = 4 ⇒ E 4 = −0.849 eV d F dψ I
dr H dr K
2 100
r

−1 F 1 I L F −r I F r I F −r I O
5/ 2

⋅ G J M2 r expG J − G J expG J P
2
2.39
π Ha K N H a K H a K H a KQ
We have =

F 1I
F −r I
⋅G J
expG J
1
3/ 2 o

Substituting into the wave equation, we have

o o o

π Ha K
Ha K
ψ =
−1 F 1 I L F −r I r F −r I O
100
5/ 2

⋅ G J M2 r expG J − expG J P
2
o o

r π Ha K N H a K a H a KQ
and 2

1 F 1I F −2r IJ 3 o o o o

P = 4πr ψ ψ = 4πr ⋅ ⋅ G J expG 2m L h O F 1 I F 1I F −r I

π Ha K Ha K
2 * 2 3/ 2

⋅ G J expG J = 0
2

or
100 100
o o
+
h N
M
2
E+o
P
m a rQ H π K Ha K
⋅
o
Ha K
o o o

4 F −2r IJ
⋅ r expG
where
P=
aa f H a K
2
− mo e −h
4 2
3
o

To find the maximum probability

o
E = E1 =
a 4π ∈ f ⋅ 2 h o
2 2
⇒ E1 =
2 mo a o
2

dP(r )
=0 Then the above equation becomes
dr
RSr FG −2 IJ expFG −2r IJ + 2r expFG −2r IJ UV 1 F 1 I L F −r I OR −1 LM2r − r OP
⋅ G J MexpG J P S
3/ 2 2

π H a K N H a K QT r a N
4
a Q
=
aa f T H a K H a K H a KW
2 2
3 o o o o

2m F − h h IU
o o o o

G JV = 0
2 2
which gives
h H 2m a m a rKW
+ o
+
−r
2

0= + 1 ⇒ r = ao o o o o

ao or
1 F 1 I L F −r I O
3/ 2

⋅ G J MexpG J P
or r = a o is the radius that gives the greatest
probability. π H a K N H a KQ
o o

2.40 R −2 + 1 + FG −1 + 2 IJ UV = 0
×S
ψ 100 is independent of θ and φ , so the wave Ta r a H a a r K W o
2
o
2
o o

equation in spherical coordinates reduces to which gives 0 = 0, and shows that ψ 100 is indeed
1 ∂ F
2 ∂ψ 2m I a solution of the wave equation.
r ∂r
2
⋅ r
H
∂r h K
+ 2 o ( E − V (r ))ψ = 0

where 2.41
All elements from Group I column of the
−e −h
2 2

V (r ) = = periodic table. All have one valence electron in

4π ∈o r mo a o r the outer shell.
For
F 1 I F −r I
⋅ G J expG J ⇒
1
3/ 2

π Ha K Ha K
ψ = 100
o o

1 F 1 I F −1I F −r I 3/ 2

⋅ G J G J expG J
dψ
π Ha K Ha K Ha K
= 100

dr o o o

Then

20
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

Chapter 3

Problem Solutions
d u1 ( x ) du1 ( x )
b g
2

+ 2 jk − k − α u1 ( x ) = 0
2 2
2
3.1 If a o were to increase, the bandgap energy dx dx
would decrease and the material would where
begin to behave less like a semiconductor 2 mE
α =
2

and more like a metal. If a o were to h

2

decrease, the bandgap energy would Q.E.D.

increase and the material would begin to In region II, V ( x ) = VO . Assume the same form
behave more like an insulator.
of the solution
E LM F F I I OP
3.2
Schrodinger’s wave equation
Ψ( x , t ) = u( x ) exp j kx −
h
t
N H H K KQ
−h ∂ Ψ( x , t ) ∂Ψ( x , t ) Substituting into Schrodinger’s wave equation,
2 2

⋅ + V ( x ) ⋅ Ψ( x , t ) = jh we obtain

( jk ) u( x ) exp L j F kx − F I t I O
∂x ∂t
2
2m
−h
2
Let the solution be of the form
LM F F E I tI OP 2m
{ M 2 E
N H H h K K PQ
Ψ( x , t ) = u( x ) exp j kx −
N H H hK K Q ∂u( x ) LM F F E I tI OP
Region I, V ( x ) = 0 , so substituting the proposed
+2 jk
∂x N H H h K KQ
exp j kx −

solution into the wave equation, we obtain ∂ u( x ) LM F F E I tI OPUV

2

−h
2

{ ∂ LM F F E I tI OP +
∂x N H H h K K QW
exp j kx − 2

2m ∂x
⋅
N H H hK K Q
jku( x ) exp j kx −
LM F F E I tI OP
∂u( x ) LM F F E I tI OPUV N H H h K KQ
+V u( x ) exp j kx −

N H H h K K QW
O
+ exp j kx −
∂x
F − jE I ⋅ u( x) expLM jF kx − F E I tI OP LM F F E I tI OP
= jh
HhK N H H h K KQ N H H h K KQ
= Eu( x ) exp j kx −

This equation can be written as

which becomes ∂u( x ) ∂ u( x )
2

( jk ) u( x ) exp L j F kx − F I t I O
− k u( x ) + 2 jk +
2
−h
2

2m
{ 2 E
MN H H h K K PQ ∂x
2 mVO
∂x
2

2 mE
∂u( x ) LM F F E I tI OP − u( x ) = 0 u( x ) +

N H H h K KQ
2 2
+2 jk exp j kx − h h
∂x Setting u( x ) = u2 ( x ) for region II, this equation
∂ u( x ) LM F F E I tI OPUV
2
becomes
+
∂x N H H h K K QW
exp j kx − 2 d u2 ( x )
2

+ 2 jk
du2 ( x )

LM F F E I tI OP dx
2
dx

N H H h K KQ
= + Eu( x ) exp j kx −
− k −α +
F
H
2 2 2 mVO
2
I u ( x) = 0
K 2
This equation can then be written as h
∂u( x ) ∂ u( x )
2
2 mE where
− k u( x ) + 2 jk + + ⋅ u( x ) = 0
2

∂x ∂x h
2 2 2 mE
α =
2

Setting u( x ) = u1 ( x ) for region I, this equation

2
h
becomes Q.E.D.

23
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

3.3 A+ B−C− D = 0
We have Also
d u1 ( x ) du1 ( x )
b g
2
du1 du
+ 2 jk − k − α u1 ( x ) = 0
2 2
2
= 2
dx dx dx x = 0 dx x = 0
The proposed solution is which yields
u1 ( x ) = A exp j (α − k ) x + B exp − j (α + k ) x (α − k ) A − (α + k ) B − (β − k )C + ( β + k ) D = 0
The first derivative is The third boundary condition is
du1 ( x ) u1 (a ) = u2 ( −b )
= j (α − k ) A exp j (α − k ) x
dx which gives
− j (α + k ) B exp − j (α + k ) x A exp j (α − k )a + B exp − j (α + k )a
and the second derivative becomes = C exp j ( β − k )( −b) + D exp − j ( β + k )( −b)
d u1 ( x )
2
This becomes
= j (α − k ) A exp j (α − k ) x
2

dx
2 A exp j (α − k )a + B exp − j (α + k )a
+ j (α + k ) B exp − j (α + k ) x
2
− C exp − j ( β − k )b − D exp j ( β + k )b = 0
Substituting these equations into the differential The last boundary condition is
equation, we find du1 du
−(α − k ) A exp j (α − k ) x
2 = 2
dx x = a dx x =− b
−(α + k ) B exp − j (α + k ) x which gives
2

+2 jk { j (α − k ) A exp j (α − k ) x j (α − k ) A exp j (α − k )a

− j (α + k ) B exp − j (α + k ) x } − j (α + k ) B exp − j (α + k )a

b
− k − α { A exp j (α − k ) x
2 2
g = j ( β − k )C exp j ( β − k )( −b)
− j ( β + k ) D exp − j ( β + k )( −b)
+ B exp − j (α + k ) x }=0 This becomes
Combining terms, we have (α − k ) A exp j(α − k )a
l−bα − 2αk + k g − 2k (α − k )
2 2

−(α + k ) B exp − j (α + k )a
−b k − α gq A exp j (α − k ) x
2 2

−( β − k )C exp − j ( β − k )b
+m−cα + 2αk + k h + 2 k aα + k f2 2
+( β + k ) D exp j ( β + k )b = 0
−b k − α gq B exp − j (α + k ) x = 0
2 2

We find that 3.5 Computer plot

0=0 Q.E.D.
3.6 Computer plot
For the differential equation in u2 ( x ) and the
proposed solution, the procedure is exactly the 3.7
same as above. sin αa
P′ + cos αa = cos ka
αa
3.4 Let ka = y , αa = x
We have the solutions
Then
u1 ( x ) = A exp j (α − k ) x + B exp − j (α + k ) x
sin x
for 0 < x < a P′ + cos x = cos y
x
u2 ( x ) = C exp j ( β − k ) x + D exp − j ( β + k ) x
for −b < x < 0 d
Consider of this function
The boundary conditions: dy
u1 (0) = u2 (0)
which yields

24
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

∆E = 2.64 eV
d
dy
{ P ′ ⋅ b xg −1
⋅ sin x + cos x = − sin y } (b)
ka = 2π ⇒ cos ka = +1
We obtain

P′
RS(−1)( x) −2 dx
+ ( x ) cos x
−1 dx UV 1st point: αa = 2π
2nd point: αa = 2.54π
T sin x
dy dy W Then
E 3 = 6.0165 eV
dx
− sin x = − sin y
dy E 4 = 9.704 eV
Then so
dx RS P ′LM −1 sin x + cos x OP − sin xUV = − sin y ∆E = 3.69 eV

dy T N x x Q W
2 (c)
ka = 3π ⇒ cos ka = −1
For y = ka = nπ , n = 0 , 1 , 2 , . . . 1st point: αa = 3π
⇒ sin y = 0 2nd point: αa = 3.44π
So that, in general, then Then
dx d (αa ) dα E 5 = 13.537 eV
=0= =
dy d ( ka ) dk E 6 = 17.799 eV
And so
∆E = 4.26 eV
2 mE dα F I F 2m I dE
1 2 mE
−1/ 2

2 H h K H h K dk
α= 2
⇒ = 2 2
(d)
h dk ka = 4π ⇒ cos ka = +1
This implies that 1st point: αa = 4π
dα dE nπ 2nd point: αa = 4.37π
=0= for k =
dk dk a Then
E 7 = 24.066 eV
3.8 E 8 = 28.724 eV
sin αa so
f (αa ) = 9 + cos αa = cos ka ∆E = 4.66 eV
αa
(a) ka = π ⇒ cos ka = −1
1st point: αa = π : 2nd point: αa = 1.66π 3.9
(2nd point by trial and error) (a) 0 < ka < π
Now For ka = 0 ⇒ cos ka = +1
2 mEF αa I ⋅ h 2 2 By trial and error: 1st point: αa = 0.822π
αa = a
h H a K 2m
2
⇒E= 2nd point: αa = π
From Problem 3.8, E = (αa ) (0.1524 )
2
(eV )
So
(αa ) b1.054 x10 g ⇒
2 −34 2 Then
E1 = 1.0163 eV
b5x10 g 2b9.11x10 g
E= ⋅ 2 −31
−10
E 2 = 1.5041 eV
so
E = (αa ) 2.439 x10 (J)
2 −20
∆E = 0.488 eV
or (b)
E = (αa ) (0.1524 ) (eV ) π < ka < 2π
2

So Using results of Problem 3.8

αa = π ⇒ E1 = 1.504 eV 1st point: αa = 1.66π
2nd point: αa = 2π
αa = 1.66π ⇒ E 2 = 4.145 eV Then
Then

25
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

E 3 = 4.145 eV (c)
ka = 3π ⇒ cos ka = −1
E 4 = 6.0165 eV
1st point: αa = 3π
so 2nd point: αa = 3.33π
∆E = 187
. eV Then
(c) E 5 = 13.537 eV
2π < ka < 3π
E 6 = 16.679 eV
1st point: αa = 2.54π
2nd point: αa = 3π so
Then ∆E = 3.14 eV
E 5 = 9.704 eV (d)
ka = 4π ⇒ cos ka = +1
E 6 = 13.537 eV
1st point: αa = 4π
so 2nd point: αa = 4.26π
∆E = 3.83 eV Then
(d) E 7 = 24.066 eV
3π < ka < 4π
E 8 = 27.296 eV
1st point: αa = 3.44π
2nd point: αa = 4π so
Then ∆E = 3.23 eV
E 7 = 17.799 eV
E8 = 24.066 eV 3.11
Allowed energy bands
so Use results from Problem 3.10.
∆E = 6.27 eV
(a)
0 < ka < π
3.10 1st point: αa = 0.759π (By trial and error)
sin αa 2nd point: αa = π
6 + cos αa = cos ka We have
αa
E = (αa ) (0.1524 ) eV
2
Forbidden energy bands
(a) ka = π ⇒ cos ka = −1 Then
1st point: αa = π E1 = 0.8665 eV
2nd point: αa = 156
. π (By trial and error) E 2 = 1.504 eV
From Problem 3.8, E = (αa ) (0.1524 ) eV
2
so
Then ∆E = 0.638 eV
E1 = 1504
. eV (b)
E 2 = 3.660 eV π < ka < 2π
1st point: αa = 156
. π
so
∆E = 2.16 eV 2nd point: αa = 2π
Then
(b)
E 3 = 3.660 eV
ka = 2π ⇒ cos ka = +1
1st point: αa = 2π E 4 = 6.0165 eV
2nd point: αa = 2.42π so
Then ∆E = 2.36 eV
E 3 = 6.0165 eV (c)
E 4 = 8.809 eV 2π < ka < 3π
1st point: αa = 2.42π
so
∆E = 2.79 eV 2nd point: αa = 3π

26
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

Then so that
E 5 = 8.809 eV a
mp curve A < mp curve B
*
f a *
f
E 6 = 13.537 eV
so 3.15
∆E = 4.73 eV
∂E
(d) Points A, B: < 0 ⇒ velocity in –x direction;
3π < ka < 4π ∂k
1st point: αa = 3.33π ∂E
Points C, D: > 0 ⇒ velocity in +x direction;
2nd point: αa = 4π ∂x
Then
∂ E
2

E 7 = 16.679 eV Points A, D; < 0 ⇒ negative effective

∂k
2

E 8 = 24.066 eV
mass;
so
∂ E
2
∆E = 7.39 eV Points B, C; > 0 ⇒ positive effective
∂k
2

mass;
3.12

T = 100 K ; E g = 1170
. −
b4.73x10 g(100)
−4 2

⇒
3.16
636 + 100 k h
2 2

E − EC =
E g = 1164
. eV 2m
T = 200 K ⇒ E g = 1147
. eV
At k = 0.1 A b g ° −1
⇒
1
k
= 10 A = 10 m
° −9

T = 300 K ⇒ E g = 1125
. eV
So
T = 400 K ⇒ E g = 1.097 eV k = 10 m
+9 −1

T = 500 K ⇒ E g = 1.066 eV For A:

g = b10 g b1.054 x10 g

2 −34 2

b
9

T = 600 K ⇒ E g = 1.032 eV (0.07) 1.6 x10 −19

2m
which yields
3.13 −31
m = 4.96 x10 kg
The effective mass is given by
F 1 d E IJ
m =G ⋅
2 −1 so
m
H h dk K
*
2 2 curve A; = 0.544
mo
We have that
For B:
acurve Af > dk acurve Bf g = b10 gb1.054 x10 g
2 2
d E d E −34 2

b
9

dk
2 2
(0.7) 1.6 x10 −19

so that 2m
*
a f a
m curve A < m curve B
*
f which yields
m = 4.96 x10
−32
kg
so
3.14
The effective mass for a hole is given by m
Curve B: = 0.0544
FG 1 ⋅ d E IJ
2 −1
mo
mp =
H h dk K
*
2 2

3.17
We have that 2 2
k h
acurve Af > dk acurve Bf
2 2
d E d E EV − E =
2 2 2m
dk

27
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

k = 0.1 A b g * −1
⇒ 10 m
9 −1 2
d E
2
= E1α
2

For Curve A: dk k = kO

g b10 g b1.054 x10 g

2 −34 2

b We have
9

(0.08) 1.6 x10 −19 = 1 1 d E E1α

2 2
2m = ⋅ 2 =
which yields m
* 2
h dk h
2

−31 m or
m = 4.34 x10 kg ⇒ = 0.476 2
mo h
m =
*

E1α
2
For Curve B:

g = b10 g b1.054 x10 g

2 −34 2

b
9

(0.4) 1.6 x10 −19

3.21
2m For the 3-dimensional infinite potential well,
which yields
V ( x ) = 0 when 0 < x < a , 0 < y < a , and
m
m = 8.68 x10
−32
kg ⇒ = 0.0953 0 < z < a . In this region, the wave equation is
mo
∂ ψ ( x , y , z) ∂ ψ ( x , y, z) ∂ ψ ( x , y , z)
2 2 2

+ +
3.18 ∂x
2
∂y
2
∂z
2

(a) E = hν
2 mE
Then ψ ( x , y , z) = 0
+

ν=
E b
(1.42) 1.6 x10 −19 g⇒ h
2

h
=
b6.625x10 g −34
Use separation of variables technique, so let
ψ ( x , y , z ) = X ( x )Y ( y )Z ( z )
ν = 3.43x10 Hz
14
Substituting into the wave equation, we have
∂ X ∂Y ∂ Z
2 2 2
(b)
YZ + XZ + XY
∂x ∂y ∂z
8 2 2 2
c 3 x10 −7
λ= = = 8.75 x10 m
ν 3.43 x10
14
2 mE
+ ⋅ XYZ = 0
or h
2

λ = 0.875 µm Dividing by XYZ , we obtain

1 ∂ X 1 ∂ Y 1 ∂ Z 2 mE
2 2 2

3.19 ⋅ 2 + ⋅ 2 + ⋅ 2 + 2 =0
X ∂x Y ∂y Z ∂z h
(c) Curve A: Effective mass is a constant
Curve B: Effective mass is positive around Let
1 ∂ X ∂ X
2 2
π
⋅ 2 = −kx ⇒ + kx X = 0
2 2
k = 0 , and is negative around k = ± .
X ∂x ∂x
2
2
The solution is of the form
3.20 X ( x ) = A sin k x x + B cos k x x
E = E O − E1 cos α k − k O a f Since ψ ( x , y , z ) = 0 at x = 0 , then X (0) = 0 so
that B ≡ 0 .
dE
dk
a f
= − E1 ( −α ) sin α k − k O a f Also, ψ ( x , y , z ) = 0 at x = a , then X (a ) = 0 so

= + E1α sin α k − k O a f we must have k x a = n x π , where

nx = 1 , 2 , 3 , . .
So
Similarly, we have
a f
2
d E
= E1α cos α k − k O
2
1 ∂Y 1 ∂ Z
2 2
2
⋅ 2 = − k y and ⋅ 2 = −kz
2 2
dk
Then Y ∂y Z ∂z
From the boundary conditions, we find

28
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

k y a = n y π and k z a = nz π Now

where n y = 1 , 2 , 3 , . . . and nz = 1 , 2 , 3 , . . .
gT =
b g
4π 2 mn
* 3/ 2

z
E C + kT

E − E C ⋅ dE
3
From the wave equation, we have h EC

2 mE
−k x − k y − kz + 2 = 0
2 2 2
b g F 2I aE − E f
4π 2 mn
* 3/ 2
EC + kT

H 3K
3/ 2
h = 3 C
The energy can then be written as h EC

h
b
2

n +n +n g
FπI 2
4π b 2 m g F 2 I
* 3/ 2

E=
H aK
2 2 2

H 3 K (kT )
n 3/ 2
x y z =
2m h
3

Then
3.22 4π 2(0.067 )b9.11x10 g F 2 I
−31 3/ 2

b6.625x10 g H 3K
The total number of quantum states in the 3- g = T 3
dimensional potential well is given (in k-space) −34

by
× (0.0259)b1.6 x10 g
−19 3/ 2

πk dk
2

g T ( k )dk = ⋅a
3

π
3 or
−3 −3
g T = 3.28 x10 m = 3.28 x10 cm
23 17
where
2 mE
k =
2

h
2
3.24
We can then write
1 gV ( E ) =
4π 2 m pb g * 3/ 2

EV − E
k = ⋅ 2 mE h
3

h Now
Taking the differential, we obtain
1 1 1 1 m gT =
b g
4π 2 mp
* 3/ 2

z
EV

EV − E ⋅ dE
dk = ⋅ 2m ⋅ ⋅ ⋅ dE = ⋅ ⋅ dE h
3

h 2 E h 2E E V − kT

Substituting these expressions into the density of b g F −2 I a E − E f

4π 2 m p
* 3/ 2
EV

H 3K
3/ 2
states function, we obtain =
F 2mE I ⋅ 1 ⋅
3 V
h EV − kT
πa
3
m
Hh Kh 4π b 2 m g F 2 I
g T ( E )dE = ⋅ dE * 3/ 2

π
3 2
2E
H 3 K (kT )
p 3/ 2
=
Noting that h
3

4π 2(0.48)b9.11x10 g F 2 I
−31 3/ 2

h
b6.625x10 g H 3K
h= gT = 3
−34
2m

× (0.0259)b1.6 x10 g
this density of states function can be simplified −19 3/ 2

and written as
4πa
3
or
g T ( E )dE = (2 m)3/ 2 ⋅ E ⋅ dE −3 −3
g T = 6.29 x10 m = 6.29 x10 cm
24 18
3
h
3
Dividing by a will yield the density of states,
so that 3.25

g( E ) =
4π (2 m)
3
3/ 2

⋅ E (a) g C ( E ) =
4π 2 mn b g * 3/ 2

E − EC
h h
3

3.23 =
b
4π 2(1.08) 9.11x10 g b1.6x10 g
−31 3/ 2

−19 1/ 2
E − EC
b g
4π 2 mn
* 3/ 2
b6.625x10 −34
g3

gC ( E ) = E − EC −3 −1
= 4.77 x10 E − EC
46
h
3
m J

29
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

or 1
= ⇒ f ( E ) = 0.269
g C ( E ) = 7.63x10
−3 −1
E − E C cm eV
21
1 + exp(1)
Then (b)
E gC 1
E C + 0.05 eV 1.71x10 cm eV
21 −3 −1
1 − f (E ) = 1 −
LMa E f O
− kT − EV
PQ
1 + exp
N
V

E C + 0.10 eV 2.41x10
21 kT
E C + 0.15 eV 2.96 x10
21 1
= 1− ⇒ 1 − f ( E ) = 0.269
E C + 0.20 eV 3.41x10
21
1 + exp( −1)

(b) gV ( E ) =
4π 2 m p b g * 3/ 2

EV − E
3.30
1
f (E ) =
FE−E I
3
h

=
b
4π 2(0.56) 9.11x10 g b1.6x10 g
−31 3/ 2

−19 1/ 2
EV − E
1 + exp
H kT K F

b6.625x10 −34
g 3

(a) E − E F = kT , f ( E ) =
1
⇒
= 1.78 x10
46
EV − E
−3
m J
−1 1 + exp(1)
f ( E ) = 0.269
gV ( E ) = 2.85x10
−3 −1
EV − E cm eV
21

gV ( E ) 1
E (b) E − E F = 5kT , f ( E ) = ⇒
1 + exp(5)
EV − 0.05 eV 0.637 x10 cm eV
21 −3 −1

f ( E ) = 6.69 x10
−3
EV − 0.10 eV 0.901x10
21

EV − 0.15 eV 21 1
110
. x10 (c) E − E F = 10 kT , f ( E ) = ⇒
EV − 0.20 eV 1.27 x10
21 1 + exp(10)
f ( E ) = 4.54 x10
−5

3.26
gC bm g *
n
3/ 2
gC Fm I
=G J
*
3/ 2 3.31
1
= ⇒
Hm K
n
1 − f (E ) = 1 −
gV bm g * 3/ 2
gV
*
FE−E I
H kT K
p
p
1 + exp F

3.27 or
Computer Plot 1
1 − f (E ) =
F E − EI
3.28
gi ! 10 !
1 + exp
H kT K F

(a) E F − E = kT , 1 − f ( E ) = 0.269
a
N i ! gi − N i ! f =
8 !(10 − 8) !
(b) E F − E = 5kT , 1 − f ( E ) = 6.69 x10
−3

(10)(9)(8 !) (10)(9)
= = ⇒ = 45
(c) E F − E = 10 kT , 1 − f ( E ) = 4.54 x10
−5
(8!)(2 !) (2)(1)

3.29 3.32
1 (a) T = 300 K ⇒ kT = 0.0259 eV
(a) f (E ) =
LM a E f O
+ kT − E C 1 LM −a E − E f OP
N QP f (E ) =
FE−E I ≈ exp
N kT Q
F
1 + exp C

kT 1 + exp
H kT K F

30
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

E b g
f E 3.34
(a) For 3-Dimensional infinite potential well,
EC
bn + n + n g
−5
hπ
2 2
6.43 x10
E=
2 2 2

E C + (1 2 )kT 3.90 x10

−5
2 ma
2 x y z

E C + kT
E C + ( 3 2 )kT
2.36 x10
−5
−5

=
b1.054 x10 g π bn + n + n g−34 2 2
2 2 2

2b9.11x10 gb10 g
1.43 x10 −31 −9 2 x y z
−5
E C + 2 kT 0.87 x10
= 0.376bn + n + n g eV
2 2 2
x y z

(b) T = 400 K ⇒ kT = 0.03453 For 5 electrons, energy state corresponding to

E f (E ) n x n y nz = 221 = 122 contains both an electron

EC −4 and an empty state, so

E C + (1 2 )kT
7.17 x10
4.35 x10
−4 E F = (0.376) 2 + 2 + 1 ⇒b 2 2 2
g
E C + kT 2.64 x10
−4 E F = 3.384 eV
E C + ( 3 2 )kT
−4
1.60 x10 (b) For 13 electrons, energy state corresponding
E C + 2 kT 0.971x10
−4 to n x n y n z = 323 = 233 contains both an
electron and an empty state, so
b
E F = (0.376) 2 + 3 + 3
2 2 2
g⇒
3.33 E F = 8.272 eV

En =
hnπ
2 2 2

=
b1.054 x10 g n π−34 2 2 2

2b9.11x10 gb10 x10 g

2 2
2 ma −31 −10 3.35
The probability of a state at E1 = E F + ∆E
or
−20 being occupied is
E n = 6.018 x10 n J = 0.376n eV
2 2

For n = 4 ⇒ E 4 = 6.02 eV , a f
f1 E1 =
1
E − EF
=
F
1
∆E I F I
For n = 5 ⇒ E 5 = 9.40 eV .
As a 1st approximation for T > 0 , assume the
1 + exp 1
kT H
1 + exp
kT K H K
probability of n = 5 state being occupied is the The probability of a state at E 2 = E F − ∆E
same as the probability of n = 4 state being being empty is
empty. Then
1 1 a f
1 − f 2 E2 = 1 −
1
E − EF F I
1−
F
E − EF I =
F I E − EF
1 + exp 2
H K
1 + exp 4
H kT K H K
1 + exp 5
kT
kT
F − ∆E I
1 1 1 H kT K exp
⇒
F E − E I 1 + expF E − E I
= = 1−
F − ∆E I 1 + expF − ∆E I
=
1 + exp
H kT K F

H kT K 4 5 F
1 + exp
H kT K H kT K
or or
E 4 + E5
E F − E 4 = E5 − E F ⇒ E F =
2
a f
1 − f 2 E2 =
F + ∆E I
1

Then
6.02 + 9.40
H kT K1 + exp

EF = ⇒ E F = 7.71 eV Hence, we have that

2 f a E f = 1 − f a E f Q.E.D.
1 1 2 2

31
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

3.36 1
(a) At energy E1 , we want (c) 1 − 0.01 =
F −0.30 I
= 0.99

1 1
1 + exp
H kT K
F E1 − E F I
F I −
E1 − E F Then
exp
H kT K
H kT K = 0.011 + exp
F −0.30I = 1 = 1.0101
1
1 + exp
H kT K 0.99
FE −E I which can be written as
1 + exp
H kT K 1 F

F +0.30I = 1 = 99
This expression can be written as
exp
H kT K 0.0101
FE −E I Then
1 + exp
H kT K − 1 = 0.01
1 F

0.30
= ln( 99) ⇒ kT =
0.30
FE −E I kT ln( 99)
= 0.06529
exp
H kT K 1 F

So
FE −E I T = 756 K
⇒ 1 = (0.01) exp
H kT K 1 F

3.38
or
(a)
E1 = E F + kT ln(100)
1
f (E ) =
Then
F 7.15 − 7.0 I = 0.00304
(b)
E1 = E F + 4.6 kT 1 + exp
H 0.0259 K
or
At E1 = E F + 4.6 kT , 0.304%
a f
f E1 =
1
F E − E I = 1 + expF 4.6kT I
1 (b)
At T = 1000 K ⇒ kT = 0.08633 eV
1 + exp
H kT K 1

H kT K
F
Then
which yields 1
f (E ) =
a f
f E1 = 0.00990 ≈ 0.01 F
7.15 − 7.0
= 0.1496
I
1 + exp
H
0.08633 K
3.37 or 14.96%
(a) E F = 6.25 eV , T = 300 K , At E = 6.50 eV (c)
1
1 f (E ) =
f (E ) =
F I = 6.43 x10
−5
F
6.85 − 7.0
= 0.997
I
1 + exp
H
6.50 − 6.25
0.0259 K
1 + exp
H
0.0259 K
or
or
−3
99.7%
6.43 x10 % (d)
(b) 1
F 950 I At E = E F , f ( E ) = for all temperatures.
T = 950 K ⇒ kT = (0.0259 )
H 300 K 2

or
3.39
kT = 0.0820 eV
For E = E1 ,
Then
1 f (E ) =
1 LM −a E − E f OP
F I ≈ exp
N kT Q
1 F
f (E ) =
F 6.50 − 6.25I = 0.0453
1 + exp
H
E1 − E F
K
1 + exp
H 0.0820 K Then
kT
or 4.53%

32
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

a f F −0.30 I ⇒ f a E f = 9.3x10 or
H 0.0259 K
−6
f E1 = exp
f ( E ) = 7.88 x10
−18
1

For E = E 2 , E F − E 2 = 112
. − 0.3 = 0.82 eV At E = E 2 ,
1 LM −a E − E f OP = expF −0.4 I
1 − f (E ) = 1 −
F I 1 − f ( E ) = exp
N kT Q H 0.0259 K
F 2

−0.82
H 0.0259 K
1 + exp
or
1 − f ( E ) = 1.96 x10
−7
or
LM F −0.82 I OP
N H 0.0259 K Q
1 − f ( E ) ≈ 1 − 1 − exp
3.41
F −0.82 I ⇒ 1 − f ( E ) = 1.78x10 LM F E − E I OP −1

H 0.0259 K f ( E ) = 1 + exp
H kT K Q
−14
= exp
N
F

(b) so
For E F − E 2 = 0.4 ⇒ E1 − E F = 0.72 eV df ( E ) LM F E − E I OP −2

N H kT K Q
= ( −1) 1 + exp F

At E = E1 , dE
LM −a E − E f OP = expF −0.72 I F 1 I expF E − E I
f ( E ) = exp
N kT Q H 0.0259 K H kT K H kT K
1 F
× F

so or
f ( E ) = 8.45 x10
−13
−1 FE−E I
At E = E 2 , df ( E )
=
kT
exp
H kT K F

LM −a E − E f OP = expF −0.4 I dE LM1 + expF E − E I OP 2

1 − f ( E ) = exp
N kT Q H 0.0259 K N H kT K Q
F 2 F

so (a) T = 0 , For
1 − f ( E ) = 1.96 x10 df
−7
E < E F ⇒ exp( −∞ ) = 0 ⇒ =0
dE
3.40 df
E > E F ⇒ exp( +∞ ) = +∞ ⇒ =0
(a) At E = E1 , dE
LM −a E − E f OP = expF −0.30 I df
f ( E ) = exp
N kT Q H 0.0259 K At E = E F ⇒ → −∞
F

dE
or
f ( E ) = 9.3 x10
−6 3.42
(a) At E = E midgap ,
At E = E 2 , then
1 1
E F − E 2 = 1.42 − 0.3 = 112 f (E ) =
. eV ,
F E − EF I =
FG E IJ
So
LM −a E − E f OP = expF −112. I
1 + exp
H kT K 1 + exp
H 2kT K
g

1 − f ( E ) = exp
N kT Q H 0.0259 K
F 2

Si: E g = 112
. eV ,
or 1
f (E ) =
1 − f ( E ) = 1.66 x10
−19

1 + exp
LM 112. OP
(b)
For E F − E 2 = 0.4 ⇒ E1 − E F = 1.02 eV ,
N 2(0.0259) Q
or
At E = E1 ,
f ( E ) = 4.07 x10
−10

LM −a E − E f OP = expF −1.02 I
f ( E ) = exp
N kT Q H 0.0259 K Ge: E g = 0.66 eV ,
1 F

33
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 3
Solutions Manual Problem Solutions

1
f (E ) =
L 0.66 OP
1 + exp M
3.44
a f
At E = E 2 , f E 2 = 0.05
N 2(0.0259) Q So
or 1
f ( E ) = 2.93 x10
−6 0.05 =
F E − EFI
GaAs: E g = 1.42 eV , H
1 + exp 2
kTK
1 Then
f (E ) =
1 + exp
LM 1.42 OP E2 − E F
= ln(19 )
N 2(0.0259) Q kT
a f
By symmetry, at E = E1 , 1 − f E1 = 0.05 ,
or
So
f ( E ) = 1.24 x10
−12

E F − E1
(b) = ln(19 )
Using results of Problem 3.35, the answers to kT
part (b) are exactly the same as those given in Then
part (a). E 2 − E1
= 2 ln(19 )
kT
3.43 (a)
1 At T = 300 K , kT = 0.0259 eV
f ( E ) = 10 =
F 0.55I
−6

E 2 − E1 = ∆E = (0.0259 )(2 ) ln(19 ) ⇒

1 + exp
H kT K ∆E = 0.1525 eV
Then (b)
F I = = 10 ⇒
0.55 1 At T = 500 K , kT = 0.04317 eV
H kT K 10
+6
1 + exp −6
E 2 − E1 = ∆E = ( 0.04317)(2 ) ln(19 ) ⇒
F 0.55I ≈ 10 ⇒ F 0.55I = lnb10 g ∆E = 0.254 eV
H kT K H kT K
+6 6
exp

or
0.55
T = 461K
kT =
b g⇒
ln 10
6

34
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

Chapter 4
Problem Solutions
4.1
F − E IJ
= N N expG
FG 5.83x10 IJ = F 300I expL− E F 1 − 1 I O
7 2 3

H kT K H 182. x10 K H 200K MN H 0.0259 0.01727 K PQ

2 g
ni C V 2 g

(a) Silicon or
T (° K ) kT (eV ) b g
ni cm
−3
1.026 x10 = 3.375 exp (19.29) E g
11

4 which yields
200 0.01727 7.68 x10
12
E g = 1.25 eV
400 0.03453 2.38 x10
For T = 300 K ,
F −1.25 I
14
600 0.0518 9.74 x10

(b) Germanium (c) GaAs

b5.83x10 g = a N
7 2

CO
f
N VO (300) exp
3

H 0.0259 K
T (° K ) ni cmb g −3
b g
ni cm
−3
or
N CO N VO = 115
29
10
. x10
200 2.16 x10 1.38
14 9
400 8.60 x10 3.28 x10
4.5
LM −a E − E f OP
16 12
600 3.82 x10 5.72 x10
(a) g C f F ∝
N kT Q
E − E C exp F

4.2 LM −a E − E f OP expLM −a E − E f OP
F − E IJ ∝ E − EC
N kT Q N kT Q
C C F
exp
n = N N expG
H kT K
2 g
i C V
Let E − E C ≡ x

b10 g = b2.8x10 gb1.04 x10 gFH 300T IK expFH −kT112. IK

3 Then
12 2 19 19
F −xI
Then
gC f F ∝ x exp
H kT K
F 112. I = b2.912 x10 gF T I 3 Now, to find the maximum value
a f F I
H kT K H 300 K −x
14
exp d gC f F 1 −1/ 2

By trial and error

dx
∝ x exp
2 kT H K
T = 381K 1 F −xI = 0
− ⋅x
H kT K
1/ 2
exp
kT
4.3 This yields
Computer Plot 1/ 2
1 x kT
1/ 2
= ⇒x=
4.4 2x kT 2
FG − E IJ
ni = N CO N VO ⋅ (T ) ⋅ exp
Then the maximum value occurs at

H kT K
2 3 g
kT
E = EC +
2
So
n aT f F T I L F 1 − 1 IJ OP (b)
LM a f OP
3

= G J exp M − E G
2

n aT f H T K
i
2
i
2

1N H kT kT K Q
2

1
g
2 1
a f
gV 1 − f F ∝ EV − E exp
− EF − E
kT N Q
At T2 = 300 K ⇒ kT = 0.0259 eV LM −a E − E f OP expLM −a E − E f OP
∝ − E exp
N kT Q N kT Q
F V V
EV
At T1 = 200 K ⇒ kT = 0.01727 eV
Then Let EV − E ≡ x

37
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

Then

a fF −xI LM −(1 − 1.2) OP = expLM +0.20 OP

gV 1 − f F ∝
H kT K x exp = exp
N 2(0.0259) Q N 2(0.0259) Q
To find the maximum value
d g a1 − f f
or
d L F −xI O ni ( A)
dx MN H kT K QP = 0
∝V F
x exp = 47.5
dx ni ( B )
Same as part (a). Maximum occurs at
kT
x= = EV − E 4.9
2 Computer Plot
or
kT 4.10
E = EV −
2 Fm I
= kT lnG J
3
*

Hm K
p
E Fi − E midgap *
4 n
4.6
LM −a E − E f OP Silicon: mp = 0.56mO , mn = 1.08mO
* *

a f= E1 − E C
N kT Q
1 C
exp
n E1 E Fi − E midgap = −0.0128 eV
na E f LM −a E − E f OP
E2 − EC
N kT Q Germanium: mp = 0.37mO , mn = 0.55mO
2 C * *
2
exp

where E Fi − E midgap = −0.0077 eV

kT Gallium Arsenide: mp = 0.48mO , mn = 0.067 mO
* *
E1 = E C + 4 kT and E 2 = E C +
2
E Fi − E midgap = +0.038 eV
Then
a f=
n E1 4 kTLM −a E − E f OP
na E f N kT Q
1 2
exp 4.11
2 kT
= kT lnG J
Fm I3
*

Hm K
p
2 (a) E −E
LM F 1 I OP = 2 2 exp(−3.5)
Fi midgap *
4 n

N H 2K Q
= 2 2 exp − 4 − 3 F 1.4 I ⇒
or
= (0.0259 ) ln
4 H 0.62 K
na E f E Fi − E midgap = +0.0158 eV
na E f
1
= 0.0854
(b)
F 0.25I ⇒
2

3
4.7
E Fi − E midgap =
4
(0.0259) ln
H 110. K
Computer Plot E Fi − E midgap = −0.0288 eV

4.8
FG − E IJ 4.12
FG N IJ
H kT K = expLM −b E − E g OP
gA
exp 1
n ( A)
2
( kT ) ln
E Fi − E midgap =
HN K
V

F − E IJ N kT Q
gA gB
i
=
2
expG
n ( B)
2

H kT K
C

F 1.04 x10 IJ = −0.495(kT )

i gB

= ( kT ) lnG
19
1
or 2 H 2.8x10 K 19

n ( A) i
= exp M
L −b E − E g OP gA gB

n ( B) i N 2kT Q

38
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

T (° K ) kT (eV ) E Fi − E midgap (eV )

z
∞
a E − E f dE
= C1
FE−E I
C

200 0.01727 −0.0085

1 + exp
EC
H kT K F

or
−0.017
LM −a E − E f OPdE
400 0.03453
≈ C z a E − E f exp
∞
600 0.0518 −0.0256
N kT Q
F
nO 1 C
EC

Let
4.13 E − EC
Computer Plot η= so that dE = kT ⋅ dη
kT
We can write
4.14
Let g C ( E ) = K = constant a f a fa f
E − E F = E − EC + EC − E F
Then, Then
LM a f OP
z − EC − E F
∞

nO = g C ( E ) f F ( E )dE nO = C1 exp
kTN Q
EC

× z a E − E f exp
∞
LM −a E − E f OPdE
z N kT Q
∞ C
1 C
=K
FE−E I dE EC
EC
H kT K
1 + exp F
or
LM −a E − E f OP
≈ K z exp
LM −a E − E f OPdE
∞ = C1 exp
N kT Q
C F

N kT Q
F

z
∞
EC

Let × ( kT )η exp( −η ) ( kT )dη

E − EF 0

η= so that dE = kT ⋅ dη We find that

z
kT ∞ −η
e
We can write η exp( −η )dη = ( −η − 1) ∞0 = +1
a fa f
E − E F = EC − E F − EC − E
So
0
1

LM −a E − E f OP
so that
LM a f OP LM a f OP
− E − EF − EC − E F nO = C1 ( kT ) exp
2
⋅ exp( −η )
N kT Q
C F
exp
N kT Q N= exp
kT Q
The integral can then be written as
LM −a E − E f OPz exp(−η)dη ∞
4.16
Fm I
n = K ⋅ kT ⋅ exp
N kT Q
C F
r1
Hm K
O
0 We have =∈r O
*
which becomes aO
LM −a E − E f OP For Germanium, ∈r = 16 , m = 0.55mO
*

n = K ⋅ kT ⋅ exp
N kT Q
C F
O
Then
1 F I
4.15
r1 = (16)
0.55 H K
a O = 29(0.53)

Let g C ( E ) = C1 E − E Ca f for E ≥ E C
so

z
°
∞ r1 = 15.4 A
nO = g C ( E ) f F ( E )dE The ionization energy can be written as
EC
F m IJ FG ∈ IJ (13.6)
E =G
* 2

H m KH ∈ K
O
eV
O S

39
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

0.55
(13.6) ⇒ E = 0.029 eV LM −a E − E f OP
= nO = N C exp
N kT Q
C F

(16) 2

F −0.90 I
= 2.8 x10 exp
H 0.0259 K
18

4.17
r1 Fm I or
We have
aO
=∈r
Hm K O
*
nO = 2.27 x10 cm
4 −3

For GaAs, ∈r = 131. , m = 0.067 mO

*

Then 4.20
1 F I (a) T = 400 K ⇒ kT = 0.03453 eV
r1 = (131
.)
0.067 H
(0.53)
K F 400 I = 7.24 x10 3/ 2

H 300 K
−3
N = 4.7 x10
17 17
C
cm
or
°
r1 = 104 A Then
The ionization energy is LM −a E − E f OP
n = N exp
N kT Q
C F

FG m IJ FG ∈ IJ (13.6) = 0.067 (13.6)

* 2
O C

E=
H m KH ∈ K
O

(131
.) F −0.25 I
H 0.03453K
2
= 7.24 x10 exp
17
O S

or
E = 0.0053 eV or
−3
nO = 519
14
. x10 cm
4.18 Also
2
b15. x10 g 10 2
F 400 I 3/ 2

ni
H 300 K
−3
= 7 x10 = 1.08 x10 cm
18 19
(a) pO = = ⇒ NV
4
nO 5 x10
−3
and
pO = 4.5 x10 cm , pO > nO ⇒ p-type
15
E F − EV = 1.42 − 0.25 = 117
. eV
(b) Then
FG p IJ −117
. F I
Hn K pO = 1.08 x10 exp
H K
19
E Fi − E F = kT ln O

i
0.03453

F 4.5x10 IJ
= (0.0259 ) lnG
15 or

H 1.5x10 K
−3
pO = 2.08 x10 cm
4
10

(b)
or
E Fi − E F = 0.3266 eV FG N IJ
E C − E F = kT ln
Hn K
C

4.19 F 4.7 x10 IJ

= (0.0259 ) lnG
17

LM −a E − E f OP H 5.19 x10 K 14
pO = N V exp
N kT Q
F V

or E C − E F = 0.176 eV
F −0.22 I
= 1.04 x10 exp
H 0.0259 K Then
19

E F − EV = 1.42 − 0.176 = 1.244 eV

so and

b g FH I
−3
pO = 2.13 x10 cm
15
−1.244
pO = 7 x10 exp
K
18

Assuming 0.0259
E C − E F = 112
. − 0.22 = 0.90 eV or pO = 9.67 x10 cm
−3 −3

Then

40
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

4.21 nO = 2.03 x10 cm

−3

LM −a E − E f OP
4

pO = N V exp
N kT Q From (b)
F V

or nO =
ni
2

=
b2.38x10 g 12 2

− E = kT lnG
F N IJ pO 111
. x10
16

Hp K
V
EF V or
O

F 1.04 x10 IJ = 0.24 eV

−3
nO = 510
8
. x10 cm
= (0.0259 ) lnG
19

H 10 K 15
4.23
Then
FE −E I
E C − E F = 112
. − 0.24 = 0.88 eV (a) pO = ni exp
H kT K Fi F

So
LM a fO = b1.8 x10 g exp
F 0.35 I
− EC − E F
H 0.0259 K
6

nO = N C exp
kT N PQ
F −0.88 I or

H 0.0259 K
−3
pO = 1.33 x10 cm
12
= 2.8 x10
19
exp
(b) From Problem 4.1,
or
ni ( 400 K ) = 3.28 x10 cm , kT = 0.03453 eV
9 −3
−3
nO = 4.9 x10 cm
4

Then
FG p IJ
4.22 E Fi − E F = kT ln
Hn K
O

FE −E I
H kT K
i
(a) pO = ni exp
FG 1.33x10 IJ
Fi F
12

= (0.03453) ln
F 0.35 I H 3.28x10 K
9

H 0.0259 K
10
15
. x10 exp
or
or E Fi − E F = 0.207 eV
−3
pO = 111
16
. x10 cm (c) From (a)
(b)
nO =
ni
2

=
b18. x10 g 6 2

From Problem 4.1, ni ( 400 K ) = 2.38 x10 cm

12 −3
12
pO 1.33 x10
F 400I = 0.03453 eV or
H 300K
kT = ( 0.0259 )
nO = 2.44 cm
−3

Then From (b)

E − E = kT lnG J
Fp I b3.28x10 g 9 2

Hn K
O
Fi F
nO = 12
i
1.33 x10
F 111. x10 IJ
= ( 0.03453) lnG
16
or
H 2.38x10 K 12
nO = 8.09 x10 cm
6 −3

or
E Fi − E F = 0.292 eV 4.24
(c) For silicon, T = 300 K , E F = EV
From (a) EV − E F
= 0 ⇒ F1/ 2 (η ′ ) = 0.60
nO =
ni
2

=
b
15
. x10
10
g 2 η′ =
kT
pO 111
. x10
16 We can write
or

41
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

2
N V F1/ 2 (η ′ ) =
2
b1.04 x10 g(0.60) exp( − x )
LM 1 − x OP
N2 Q
−1/ 2
pO = 0 = Kx
19

π π
or which yields
pO = 7.04 x10 cm
18 −3
1 E − EC 1
x= = ⇒ E = E C + kT
2 kT 2
4.25 For the hole concentration
Silicon, T = 300 K , nO = 5 x10 cm
19 −3 p( E ) = gV ( E ) 1 − f F ( E )
We have From the text, using the Maxwell-Boltzmann
approximation, we can write
nO =
2
π
N C F1/ 2 η F a f b g
4π 2 m p
*
LM −a E − E f OP
3/ 2

p( E ) =
N kT Q EV − E exp F
3
or h

5 x10 =
19 2
π
b
2.8 x10 F1/ 2 η F
19
g a f or
4π b2 m g LM −a E − E f OP
* 3/ 2

p( E ) =
p

N kT Q
F V
exp
which gives 3

a f
F1/ 2 η F = 158
.
h
E −E LM −a E − E f OP
Then × kT
N kT Q
V V
exp
E − EC kT
η F = 1.3 = F EV − E
kT Define x ′ =
or E F − E C = 1.3)(0.0259 ) ⇒
( kT
Then
E C − E F = −0.034 eV
p( x ′ ) = K ′ x ′ exp( − x ′ )

4.26 To find the maximum of p( E ) → p( x ′ ) , set

For the electron concentration dp( x ′ )
= 0 . Using the results from above, we
n( E ) = g C ( E ) f F ( E ) dx ′
The Boltzmann approximation applies so find the maximum at

n( E ) =
b g
4π 2 mn
* 3/ 2

LM −a E − E f OP E = EV − kT
1

N kT Q E − E C exp F

h
3 2
or
4π b 2 m g LM −a E − E f OP
* 3/ 2 4.27
n( E ) = (a) Silicon: We have
n

N kT Q
C F

LM a fO
exp 3
h − EC − E F
E−E LM −a E − E f OP nO = N C exp
kT N PQ
× kT
N kT Q
C C
exp
We can write
Define
kT
a
EC − E F = EC − Ed + Ed − E F fa f
E − EC For
x= E C − E d = 0.045 eV , E d − E F = 3kT
kT
Then
n( E ) → n( x ) = K x exp( − x )
b g expLMN 0−.00259
nO = 2.8 x10
19.045
−3
OP
Q
To find maximum n( E ) → n( x ) , set = b2.8 x10 g exp( −4.737)
19

dn( x ) LM 1 x exp( − x ) + x ( −1) exp( − x ) OP or

N2 Q
−1/ 2
=0= K
1/ 2
−3
nO = 2.45 x10 cm
17
dx
or We also have

42
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

LM −a E − E f OP ni
2
b2.4 x10 g 13 2

N kT Q
pO = N V exp F V
nO = = 13
⇒
pO 2.95 x10
Again, we can write
E − E = aE − E f + aE − E f
−3
nO = 1.95 x10 cm
13

F V F a a V

For (b)
E F − E a = 3kT , E a − EV = 0.045 eV Nd − Na FN − Na I 2

nO = +
H K + ni
d 2
Then

g LMN OP 2 2
b
pO = 1.04 x10 exp −3 −
19 0.045
0.0259Q Then

= b1.04 x10 g exp( −4.737)

19 5 x10
15
FG 5x10 IJ + b2.4 x10 g
15 2
2
nO = +
H 2 K
13

or 2

pO = 9.12 x10 cm
16 −3 or
−3
nO ≈ 5 x10 cm
15

(b)
GaAs: Assume E C − E d = 0.0058 eV and
Then ni
2
b2.4 x10 g 13 2

b g LMN OP
−0.0058 pO = = 15
⇒
nO 5 x10
nO = 4.7 x10 exp −3
Q
17

0.0259 −3
pO = 115
11

= b4.7 x10 g exp( −3.224)

17
. x10 cm

or 4.30
−3
nO = 1.87 x10 cm
16
For the donor level
Assume E a − EV = 0.0345 eV nd 1
Then Nd
=
1 F
E − EF I
b g LMN −0.0345 OP 1 + exp d
2 HkT K
pO = 7 x10 exp −3
Q
18

0.0259 1
= b7 x10 g exp( −4.332)
18
=
1 F 0.20 I
or
1 + exp
2 H 0.0259 K
pO = 9.20 x10 cm
16 −3 or
nd −4
= 8.85 x10
4.28 Nd
Computer Plot And
1
fF (E ) =
4.29
FE−E I
(a) Ge:
H kT K
1 + exp F

Na − Nd FN −N I 2

pO = +
H 2 K + ni Now
2

= aE − E f + aE − E f
a d

2 E − EF C C F
Then or
E − E F = kT + 0.245
10
13
FG 10 IJ + b2.4 x10 g
13 2
2
Then
pO = +
H2K
13
1
fF (E ) =
2
0.245 F I⇒
or
pO = 2.95 x10 cm
13 −3
1 + exp 1 +
0.0259 H K
f F ( E ) = 2.87 x10
−5

and

43
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

4.31
−3
= 5 x10 +
13
b5x10 g + b8.54 x10 g 13 2 13 2

(a) nO = N d = 2 x10 cm
15
or

b15. x10 g
−3
nO = 1.49 x10 cm
14
10 2
2
ni
pO = = ⇒ Also
b8.54 x10 g
15
nO 2 x10 2 13 2
ni
pO = 1125
. x10 cm
5 −3
pO = = 14
⇒
nO 1.49 x10
(b) −3
pO = 4.89 x10 cm
13
−3
pO = N a = 10 cm
16

nO =
2
ni
=
b15. x10 g 10 2

⇒
4.32
−3
(a) nO = N d = 2 x10 cm
16 15
pO 10
nO = 2.25 x10 cm
4 −3

pO =
ni
2

=
b1.8x10 g 6 2

⇒
(c) 15
nO 2 x10
−3
nO = pO = ni = 15
10
. x10 cm −3 −3
pO = 1.62 x10 cm
(d)
T = 400 K ⇒ kT = 0.03453 eV (b)

F 400 I expF −112. I

−3
pO = N a = 10 cm
16

= b2.8 x10 gb1.04 x10 g

3

H 300 K H 0.03453K b1.8x10 g

2 19 19
ni 2 6 2
ni
or nO = = 16
⇒
pO 10
−3
ni = 2.38 x10 cm
12
−4 −3
nO = 3.24 x10 cm
Na F N I +n 2
(c)
pO = +
H2K a 2
i −3
2 nO = pO = ni = 1.8 x10 cm
6

+ b5 x10 g + b 2.38 x10 g

2 2
(d)
= 5 x10
13 13 12

kT = 0.03453 eV

gb7 x10 gFH 400 I expF −1.42 I

or
b
3

300 K H 0.03453K
−3
pO = 1.0 x10 cm ni = 4.7 x10
14 2 17 18

Also
or

nO =
2
ni
=
b2.38x10 g 12 2

⇒
ni = 3.28 x10 cm
9 −3

14
pO 10 Now
−3
pO = N a = 10 cm
14
−3
nO = 5.66 x10 cm
10

(e) and
T = 500 K ⇒ kT = 0.04317 eV 2
ni b3.28x10 g 9 2

gFH 500 I expF −112. I nO = = ⇒

b gb
3
14
pO 10
300 K H 0.04317 K
ni = 2.8 x10
2 19 19
1.04 x10

or nO = 1.08 x10 cm
5 −3

−3
(e)
ni = 8.54 x10 cm
13
kT = 0.04317 eV

gb7 x10 gFH 500 I expF −1.42 I

Now
b
3

Nd FN I 2
ni = 4.7 x10
2 17

300 K
18

H 0.04317 K
nO = +
H2K + ni
d 2

2 or

44
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

ni = 2.81x10 cm
11 −3 4.34
For T = 450 K
Now
= b2.8 x10 gb1.04 x10 g
F 450 I 3

H 300 K
−3
nO = N d = 10 cm
14 2 19 19
ni
Also
b2.81x10 g 11 2 L −112.
× exp M
OP
N (0.0259)a450 300f Q
2
ni
pO = = 14
⇒
nO 10
or
−3
pO = 7.90 x10 cm
8
−3
ni = 1.72 x10 cm
13

(a)
4.33 N a > N d ⇒ p-type
(a) N a > N d ⇒ p-type (b)
(b) Si:
Na − Nd FN −N I 2

pO = N a − N d = 2.5 x10 − 1x10

H 2 K
13 13
pO = + + ni
a d 2

or 2
1.5 x10 − 8 x10
−3 15 14
pO = 15
13
. x10 cm
=
Then 2

nO =
2
ni
=
b15. x10 g 10 2

⇒ FG 1.5x10 − 8x10 IJ + b1.72 x10 g

15 14 2
2
+
H 2 K
13
13
pO 15
. x10
−3
nO = 1.5 x10 cm
7
or
−3
pO ≈ N a − N d = 7 x10 cm
14
Ge:
Na − Nd F N − N I +n 2 Then
b1.72 x10 g
pO =
H 2 K + a d 2
13 2
2
2
i
ni
nO = = ⇒
F 1.5x10 IJ + FG 15. x10 IJ + b2.4 x10 g
14
2 pO 7 x10
=G
13 13
2

H 2 K H 2 K
13 −3
nO = 4.23 x10 cm
11

(c)
or
−3
Total ionized impurity concentration
pO = 3.26 x10 cm
13

N I = N a + N d = 1.5 x10 + 8 x10

15 14

Then or

nO =
2
ni
=
b2.4 x10 g 13 2

⇒
N I = 2.3 x10 cm
15 −3

13
pO 3.26 x10
−3 4.35
nO = 1.77 x10 cm
13

GaAs: nO =
ni
2

=
b15. x10 g 10 2

⇒
−3 5
pO = 15
. x10 cm
13
pO 2 x10
−3
nO = 1125
15
And . x10 cm

nO =
2
ni
=
b1.8x10 g 6 2

⇒
nO > pO ⇒ n-type
13
pO 15
. x10
−3
nO = 0.216 cm

45
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

4.36 nO = 1x10 cm
16 −3

F I = 0.01727 eV
200
kT = ( 0.0259 )
H 300 K Then
2
b15. x10 g 10 2

= b4.7 x10 gb 7 x10 g

F 200 I 3
pO =
ni
= ⇒
H 300 K
2 17 18 16
ni nO 10

LM −1.42 OP
−3
pO = 2.25x10 cm
4

× exp
N 0.01727 Q (b)
N a > N d ⇒ p-type
or
pO = N a − N d = 3 x10 − 2 x10
−3 16 15
ni = 1.38 cm
Now or
−3
pO = 2.8 x10 cm
16

nO pO = ni ⇒ 5 pO = ni
2 2 2

or\ Then

pO =
ni
⇒ pO = 0.617 cm
−3
nO =
ni
2

=
b15. x10 g 10 2

⇒
5 pO 2.8 x10
16

And −3
nO = 8.04 x10 cm
3
−3
nO = 5 pO ⇒ nO = 3.09 cm

4.42
4.37
(a) nO < ni ⇒ p-type
Computer Plot
−3
(b) nO = 4.5 x10 cm ⇒ electrons: minority
4

4.38 carrier
Computer Plot
pO =
ni
2

=
b15. x10 g 10 2

⇒
4.39 nO 4.5 x10
4

Computer Plot −3
pO = 5 x10 cm ⇒ holes: majority carrier
15

4.40 (c)
n-type, so majority carrier = electrons pO = N a − N d
Nd F N I +n 2
so
nO = +
H2K d 2
−3
5 x10 = N a − 5 x10 ⇒ N a = 10 cm
15 15 16
i
2

= 10 +
13
b10 g + b2 x10 g
13 2 13 2
Acceptor impurity concentration,
N d = 5 x10 cm
15 −3
Donor impurity
or concentration
−3
nO = 3.24 x10 cm
13

Then

pO =
ni
2

=
b2 x10 g 13 2

⇒
4.43
FG p IJ
E Fi − E F = kT ln
Hn K
13 O
nO 3.24 x10
i
−3
pO = 1.23 x10 cm
13
For Germanium:

4.41
T (° K ) kT (eV ) b g
ni cm
−3

10
(a) N d > N a ⇒ n-type 200 0.01727 2.16 x10
14
400 0.03454 8.6 x10
nO = N d − N a = 2 x10 − 1x10
16 16
16
or 600 0.0518 3.82 x10

46
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

F N I +n b1.504 x10 g = b4.7 x10 gb7 x10 gFH 300T IK

3
2
Na 2

H2K
14 17 18
−3
p = + and N a = 10 cm
a 2 15
O i
2
L −1.42 OP
× exp M
T (° K ) p bcm g E Fi − E F ( eV ) N (0.0259)aT 300f Q
−3
O

15 By trial and error

200 1.0 x10 0.1855 T ≈ 762 K
15
400 1.49 x10 0.01898
16
600 3.87 x10 0.000674 4.46
Computer Plot

4.44 4.47
FG n IJ Computer Plot
E F − E Fi = kT ln
Hn K
O

i
4.48
For Germanium,
−3 Fm I
= kT lnG J
3
*

T = 300 K ⇒ ni = 2.4 x10 cm

Hm K
13 p
(a) E Fi − E midgap *
4
F N I +n
Nd
2
n

nO =
H2K + 3
d 2

2
i
= (0.0259) ln(10) ⇒
4
E Fi − E midgap = +0.0447 eV
N bcm g n bcm g E F − E Fi ( eV )
−3 −3
d O
(b)
10
14
1.05 x10
14
0.0382 Impurity atoms to be added so
10
16
10
16
0.156 E midgap − E F = 0.45 eV
10
18
10
18
0.2755 (i) p-type, so add acceptor impurities
(ii) E Fi − E F = 0.0447 + 0.45 = 0.4947 eV
F E − E I = 10 expF 0.4947 I
pO = ni exp
H kT K H 0.0259 K
Fi F 5
4.45
Nd FN I 2
or
nO = +
H2K + ni
d 2
−3
pO = N a = 1.97 x10 cm
13
2
Now
ni = 0.05nO 4.49
so LM −a E − E f OP
nO = N d − N a = N C exp
N kT Q
C F

nO = 1.5 x10 +
15
b 1.5 x10
15
g 2
+ (0.05)nO
2

so
which yields
F −0.215I
N d = 5 x10 + 2.8 x10
H 0.0259 K
15 19
exp
−3
nO = 3.0075 x10 cm
15

= 5 x10 + 6.95 x10

15 15
Then
ni = 1504
. x10 cm
14 −3 so
−3
N d = 1.2 x10 cm
16
We have
−Eg FG IJ
ni = N C N V exp
H K
2

4.50
so
kT
LM −a E − E f OP
(a) pO = N a = N V exp
N kT Q
F V

or

47
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

exp
LM +a E − E f OP = N
N kT Q N
F V V
=
1.04 x10
7 x10
15
19

b
pO = 1.8 x10 exp
6
g FH 0.00259
.45 I
K⇒
a
−3
pO = 6.32 x10 cm
13
= 1.49 x10
3

Then Now
E F − EV = (0.0259) ln 1.49 x10 b 3
g pO < N a , Donors must be added
or pO = N a − N d ⇒ N d = N a − pO
E F − EV = 0.189 eV so
N d = 10 − 6.32 x10 ⇒
15 13
(b)
If E F − EV = 0.1892 − 0.0259 = 0.1633 eV N d = 9.368 x10 cm
14 −3

Then
−0.1633 F I
N a = 1.04 x10 exp
H K 4.53
19

0.0259
FG N IJ
(a) E F − E Fi = kT ln
Hn K
d
−3
= 1.90 x10 cm
16

i
so that
∆N a = 1.90 x10 − 7 x10 ⇒
16 15 F 2 x10 IJ ⇒
= (0.0259 ) lnG
15

∆N a = 1.2 x10 cm
16 −3 H 15. x10 K 10

E F − E Fi = 0.3056 eV
Acceptor impurities to be added
(b)
4.51 FG N IJ
F N IJ = (0.0259) lnFG 10 IJ E Fi − E F = kT ln
Hn K
a

= kT lnG
15

(a) E F − E Fi
Hn K H 15. x10 K
d i

i
10
F 10 IJ ⇒
= (0.0259 ) lnG
16

or
H 15. x10 K 10

E F − E Fi = 0.2877 eV E Fi − E F = 0.3473 eV
(b) (c)
FG N IJ = 0.2877 eV E F = E Fi
E Fi − E F = kT ln
Hn K
a
(d)
i −3
kT = 0.03453 eV , ni = 2.38 x10 cm
12
(c)
For (a), nO = N d = 10 cm
15 −3
FG p IJ
E Fi − E F = kT ln
Hn K
O

For (b) i

2
ni b 15
. x10
10
g 2

= (0.03453) ln
FG 10 IJ ⇒ 14

nO =
pO
=
10
15
⇒
H 2.38x10 K 12

nO = 2.25 x10 cm
5 −3
E Fi − E F = 0.1291 eV
(e)
−3
kT = 0.04317 eV , ni = 8.54 x10 cm
13
4.52
FG p IJ FG n IJ
E Fi − E F = kT ln
Hn K Hn K
O
E F − E Fi = kT ln O

Fp I
i

= (0.0259 ) lnG J = 0.45 eV

FG 1.49 x10 IJ ⇒ 14

Hn K = ( 0.04317 ) ln
H 8.54 x10 K
O
13
i

Then E F − E Fi = 0.0024 eV

48
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

4.54 (e)
FG N IJ kT = 0.04317 eV , ni = 2.81x10 cm
11 −3

(a) E F − E Fi = kT ln
Hn K FG n IJ
d

Hn K
i
E F − E Fi = kT ln
F 2 x10 IJ ⇒
O

= (0.0259 ) lnG
15

H 1.8x10 K
i
6

= ( 0.04317 ) ln
FG 10 IJ ⇒
14

E F − E Fi = 0.5395 eV H 2.81x10 K 11

(b) E F − E Fi = 0.2536 eV
F N IJ
= kT lnG
E Fi − E F
Hn K
a

i
4.55

F 10 IJ ⇒
= (0.0259 ) lnG
16
p-type
FG p IJ
H 1.8x10 K 6
E Fi − E F = kT ln
Hn K
O

i
E Fi − E F = 0.5811 eV
F 5x10 IJ ⇒
= (0.0259 ) lnG
15

(c)
E F = E Fi E Fi − H 15. x10 K
10

(d) E Fi − E F = 0.3294 eV
−3
kT = 0.03453 eV , ni = 3.28 x10 cm
9

F 10 IJ ⇒
= ( 0.03453) lnG
14

E Fi − E F
H 3.28x10 K 9

E Fi − E F = 0.3565 eV

49
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 4
Solutions Manual Problem Solutions

(page left blank)

50
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

Chapter 5
Problem Solutions N d = 4.63 x10 cm
13 −3

(d)
5.1
−3
σ ≈ eµ p pO ⇒
(a) nO = 10 cm
16

and b
0.01 = 1.6 x10
−19
g(480) p O

pO =
ni
2

=
b1.8x10 g 6 2

⇒
or
−3
pO = 1.30 x10 cm = N a − N d = N a − 10
14 15
16
nO 10 or
−4 −3
pO = 3.24 x10 cm N a = 113
. x10 cm
15 −3

(b) Note: For the doping concentrations obtained,

J = eµ n nO Ε the assumed mobility values are valid.
−3
For GaAs doped at N d = 10 cm ,
16

5.3
µ n ≈ 7500 cm / V − s
2
ρL L
Then (a) R = = and σ ≈ eµ n N d
σA
b
J = 1.6 x10
−19
g(7500)b10 g(10) 16
A
−3
For N d = 5 x10 cm , µ n ≈ 1100 cm / V − s
16 2

or Then
J = 120 A / cm
2
0.1
R=
(b) (i) pO = 10 cm , nO = 3.24 x10 cm
16 −3 −4 −3
b −19 16
g
1.6 x10 (1100) 5 x10 (100) 10
−4 2
b g b g
(ii) For GaAs doped at N a = 10 cm ,
16 −3 or
R = 1136
. x10 Ω
4

µ p ≈ 310 cm / V − s
2

Then
J = eµ p p O Ε
V 5
b
= 1.6 x10
−19
g(310)b10 g(10) ⇒ 16 I =
R
=
1136
. x10
4
⇒ I = 0.44 mA

(b)
J = 4.96 A / cm
2

In this case
R = 1136
. x10 Ω
3

5.2
Then
(a) V = IR ⇒ 10 = (0.1R ) ⇒
V 5
R = 100 Ω I = = ⇒ I = 4.4 mA
3
R 1136
. x10
(b)
(c)
L L
R= ⇒σ = ⇒ V
σA RA Ε=
−3
L
10 5
σ =
(100) 10 −3 b g⇒ For (a), Ε =
0.10
= 50 V / cm

σ = 0.01 (Ω − cm)
−1 And
vd = µ n Ε = (1100)(50) or vd = 5.5 x10 cm / s
4

(c)
σ ≈ eµ n N d V 5
For (b), Ε = = = 500 V / cm
or L 0.01
b
0.01 = 1.6 x10
−19
g(1350) N d
And
vd = (1100)(500) ⇒ vd = 5.5 x10 cm / s
5
or

53
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

Then
5.4 d 10
−4
−11
(a) GaAs: tt = = 6
⇒ t t = 1.33 x10 s
ρL V 10 L vd 7.5 x10
R= = = = 0.5 kΩ = (b)
A I 20 σA
Silicon: For Ε = 50 kV / cm ,
Now
vd = 9.5 x10 cm / s
6
σ ≈ eµ p N a
Then
For N a = 10 cm , µ p ≈ 210 cm / V − s
17 −3 2
−4
d 10 −11
Then tt = = ⇒ t t = 1.05 x10 s
b g(210)b10 g = 3.36 (Ω − cm)
6
−19 −1 vd 9.5 x10
σ = 1.6 x10
17

GaAs, vd = 7 x10 cm / s
6
So
L = RσA = (500)( 3.36)b85x10 g
−8 Then
−4
d 10 −11
or tt = = ⇒ t t = 1.43 x10 s
6
L = 14.3 µm vd 7 x10
(b) Silicon
For N a = 10 cm , µ p ≈ 310 cm / V − s
17 −3 2 5.7
For an intrinsic semiconductor,
Then
b g(310)b10 g = 4.96 (Ω − cm)
σ = 1.6 x10
−19 17 −1 b
σ i = eni µ n + µ p g
(a)
So −3

L = RσA = (500)( 4.96)b85x10 g

For N d = N a = 10 cm ,
14
−8

µ n = 1350 cm / V − s , µ p = 480 cm / V − s
2 2

or
. µm
L = 211 Then
b
σ i = 1.6 x10
−19
gb15. x10 g(1350 + 480)
10

5.5 or
σ i = 4.39 x10 ( Ω − cm)
−6 −1
V 3
(a) Ε = = = 3 V / cm
L 1 (b)
−3
For N d = N a = 10 cm ,
4 18
vd 10
vd = µ n Ε ⇒ µ n = =
Ε 3 µ n ≈ 300 cm / V − s , µ p ≈ 130 cm / V − s
2 2

or
Then

(b)
µ n = 3333 cm / V − s
2

b
σ i = 1.6 x10
−19
gb15. x10 g(300 + 130)10

or
vd = µ n Ε = (800)(3)
σ i = 1.03x10 (Ω − cm)
−6 −1

or
vd = 2.4 x10 cm / s
3

5.8
(a) GaAs
5.6
(a) Silicon: For Ε = 1 kV / cm ,
σ ≈ eµ p pO ⇒ 5 = 1.6 x10 b −19
gµ p
p O

From Figure 5.3, and using trial and error, we

vd = 1.2 x10 cm / s
6
find
Then −3
pO ≈ 1.3x10 cm , µ p ≈ 240 cm / V − s
17 2

−4
d 10 −11
tt = = 6
⇒ t t = 8.33 x10 s Then
vd 1.2 x10
For GaAs, vd = 7.5 x10 cm / s
6

54
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

nO =
2
ni
=
b18. x10 g 6 2

or nO = 2.49 x10 cm
−5 −3 5.10
pO 1.3 x10
17
(a) (i) Silicon: σ i = eni µ n + µ p b g
(b) Silicon: b
σ i = 1.6 x10
−19
gb15. x10 g(1350 + 480) 10

1 or
σ = ≈ eµ n n O
σ i = 4.39 x10 ( Ω − cm)
−6 −1
ρ
or (ii) Ge:
1 1 b
σ i = 1.6 x10
−19
gb2.4 x10 g(3900 + 1900) 13

nO = =
ρeµ n (8) 1.6 x10 (1350)
−19
b g or
σ i = 2.23x10 (Ω − cm)
−1
or −2

−3
nO = 5.79 x10 cm
14
(iii) GaAs:
and b
σ i = 1.6 x10
−19
gb18. x10 g(8500 + 400) 6

pO =
ni
2

=
b15. x10 g 10 2

⇒ pO = 3.89 x10 cm
5 −3
or
σ i = 2.56 x10 (Ω − cm)
14 −9 −1
nO 5.79 x10
Note: For the doping concentrations obtained in L
part (b), the assumed mobility values are valid. (b) R =
σA
−4
5.9 200 x10
σ i = eni µ n + µ p b g (i) R =
b4.39 x10 gb85x10 g ⇒
−6 −8

Then R = 5.36 x10 Ω

9

−6
10 = 1.6 x10 b −19
g(1000 + 600)n i
200 x10
−4

or
ni ( 300 K ) = 3.91x10 cm
9 −3
(ii) R =
b2.23x10 gb85x10 g ⇒
−2 −8

R = 1.06 x10 Ω
6
Now
FG − E IJ 200 x10
−4

H kT K
g
ni = N C N V exp
2

or
(iii) R =
b2.56x10 gb85x10 g ⇒
−9 −8

F N N IJ = (0.0259) lnLM b10 g OP R = 9.19 x10 Ω

12
19 2

= kT lnG
H n K
C V
Eg 2
i MN b3.91x10 g PQ 9 2
5.11
or 1
(a) ρ = 5 =
E g = 1122
. eV eµ n N d
Now Assume µ n = 1350 cm / V − s
2

ni (500 K ) = 10
2
b g expLMN (0.0259−1122
19 2 . OP
)a500 300f Q
Then
1
= 5.15 x10
26
Nd =
b
1.6 x10 (1350)(5)
−19
⇒
g
or −3
N d = 9.26 x10 cm
14

ni (500 K ) = 2.27 x10 cm

13 −3

(b)
Then T = 200 K → T = −75C
σ i = 1.6 x10 b −19
gb2.27 x10 g(1000 + 600) 13
T = 400 K → T = 125C
From Figure 5.2,
so −3
T = −75C , N d = 10 cm ⇒
15

σ i (500 K ) = 5.81x10 (Ω − cm)

−3 −1

55
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

µ n ≈ 2500 cm / V − s
2
J = σΕ = eµ n nO Ε

T = 125C , N d = 10 cm ⇒
15 −3
b
= 1.6 x10
−19
g(1000)b10 g(100) 14

µ n ≈ 700 cm / V − s
2 or
J = 1.60 A / cm
2
−3
Assuming nO = N d = 9.26 x10 cm over the
14

temperature range, (b)

For T = 200 K , A 5% increase is due to a 5% increase in electron
concentration. So
1
ρ=
b
1.6 x10 (2500) 9.26 x10
−19
⇒
g b g F N I +n Nd
2

H2K
14
nO = 1.05 x10 = +
14 d 2
i
ρ = 2.7 Ω − cm 2
We can write
For T = 400 K ,

ρ=
1 b1.05x10 − 5x10 g = b5x10 g + n
14 13 2 13 2 2
i

b1.6x10 g(700)b9.26x10 g ⇒
−19 14 so
ni = 5.25 x10
2 26
ρ = 9.64 Ω − cm

= b2 x10 gb1x10 g
F T I expFG − E IJ 3

H 300K H kT K
19 19 g

5.12
Computer plot which yields
F T I expF −110. I 3

5.13
H 300K H kT K
−12
2.625 x10 =
(a) Ε = 10 V / cm ⇒ vd = µ n Ε
By trial and error, we find
vd = (1350)(10) ⇒ vd = 1.35 x10 cm / s
4
T = 456 K
so

T=
1
2
mn vd =
* 2 1
2
b
(1.08) 9.11x10 −31 1.35x102 gb g 2 5.15
ni
2

or (a) σ = eµ n nO + eµ p pO and nO =
−27 −8
pO
T = 8.97 x10 J ⇒ 5.6 x10 eV
Then
(b)
eµ n ni
2

Ε = 1 kV / cm , σ = + eµ p p O
pO
vd = (1350)(1000) = 1.35 x10 cm / s
6

To find the minimum conductivity,

Then
dσ ( −1)eµ n ni2
2
1
T = (1.08) 9.11x10
−31
b
1.35 x10
4 2
gb g dpO
=0=
pO
2
+ eµ p ⇒

or which yields
T = 8.97 x10
−23
J ⇒ 5.6 x10 eV
−4
Fµ I
=nG J
1/ 2

Hµ K
n
pO i
(Answer to part (b))
p
5.14

= N N expG
F − E IJ Substituting into the conductivity expression

H kT K eµ n ni
b g
2 g 2
(a) ni 1/ 2
C V
σ = σ min = + eµ p ni µ n µ p

F −110. I b
ni µ n µ p g 1/ 2

= b 2 x10 gb1x10 g exp

H 0.0259 K
19 19
which simplifies to
−3 σ min = 2eni µ n µ p
= 7.18 x10 ⇒ ni = 8.47 x10 cm
19 9

−3 −3 The intrinsic conductivity is defined as

For N d = 10 cm >> ni ⇒ nO = 10 cm
14 14

Then

56
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

b
σ i = eni µ n + µ p ⇒ eni = g σi
µn + µ p
(a)
At T = 200 K , µ n = (1300)(1837
. )⇒
µ n = 2388 cm / V − s
2
The minimum conductivity can then be written
as (b)
2σ i µnµ p At T = 400 K , µ n = (1300)(0.65) ⇒
σ min =
µ n = 844 cm / V − s
2
µn + µ p

5.16 5.19
1 1 1 1 1 1
σ = eµ ni = = + = + = 0.006
ρ µ µ1 µ2 250 500
Now Then
F − E IJ
expG
µ = 167 cm / V − s
2

H 2kT K
g

1ρ 1 50 5
= = = 0.10 =
F − E IJ
1 1
5.20
expG
1ρ 15 50
H 2kT K Computer plot
2 g

or 5.21
L F 1 − 1 IJ OP
0.10 = exp M − E G
Computer plot

N H 2kT 2kT K Q g
1 2 5.22
kT = 0.0259 dn FG 5x10 − n(0)IJ 14

F 330 I = 0.02849
1
J n = eDn
dx
= eDn
H 0.01 − 0 K
kT = (0.0259 )
H 300 K
g(25)FGH 5x100.010− n(0)IJK
2

b
14
−19
1 1 0.19 = 1.6 x10
= 19.305 , = 17.550
2 kT1 2 kT2
Then
Then (0.19)(0.010)
E g (19.305 − 17.550) = ln(10) − n(0)
b1.6x10 g(25) = 5x10
14
−19

or
which yields
E g = 1.312 eV
n(0) = 0.25 x10 cm
14 −3

5.17
5.23
1 1 1 1
= + + dn ∆n
µ µ1 µ2 µ3 J = eDn = eDn
dx ∆x

g(25)FGH 100 −−0.1010 IJK

1 1 1
b
16 15
= + + −19
2000 1500 500 = 1.6 x10
= 0.00050 + 0.000667 + 0.0020
or or
J = 0.36 A / cm
2
µ = 316 cm / V − s
2

For A = 0.05 cm
2

5.18 I = AJ = (0.05)(0.36) ⇒ I = 18 mA
F I T
−3 / 2
F I 300
+3 / 2

µ n = (1300)
H 300 K = (1300)
HTK

57
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

5.24 5.27
dn ∆n dp d LM10 expF − x I OP
J n = eDn = eDn J p = − eD p = − eD p
dp N H 22.5K Q
15

dx ∆x dx
so −4
Distance x is in µm , so 22.5 → 22.5x10 cm .
b gD FGH 100 −−4 x610x10 IJK
17 16

−400 = 1.6 x10

−19 Then

b gFH I F I
n −4
−1 −x
J p = − eD p 10
K H K
15
exp
or 22.5 x10
−4
22.5
+b1.6 x10 g(48)b10 g
−400 = Dn ( −16) −19
F −x I 15

Then
Dn = 25 cm / s
2
=
22.5 x10
exp
H 22.5K−4

or
F − x I A / cm
J = 3.41 exp
H 22.5K
2
5.25 p

dp
J = − eD p
dx
LM10 F1 − x I OP = −eD FG −10 IJ
d
16
5.28
= − eD
dx N H LK Q H L K dn
16
p p J n = eµ n nΕ + eDn
dx
b1.6x10 g(10)b10 g
−19 16
or

or
=
10 x10
−4
b
−40 = 1.6 x10 g(960)LMN10 expFH −18x IK OPQΕ
−19 16

J = 16 A / cm = constant at all three points

2

b
+ 1.6 x10
−19
g(25)b10 gFH 18x−101 IK expFH −18x IK
16
−4

5.26 Then
dp LM F − x I OPΕ − 22.2 expF − x I
J p ( x = 0) = − eD p
dx
x =0
.
N H 18 K Q
−40 = 1536 exp
H 18 K
10
15
b1.6x10 g(10)b10 g
−19 15 Then
F − x I − 40
= − eD p
b− L g p
=
5 x10
−4
22.2 exp
H 18 K ⇒
or Ε=
F −xI
J p ( x = 0) = 3.2 A / cm
2 1536
. exp
H 18 K
Now
F +xI
J n ( x = 0) = eDn
dn
dx
x=0
Ε = 14.5 − 26 exp
H 18 K
FG 5x10 IJ = b1.6x10 g(25)b5x10 g
14 −19 14
5.29
= eDn
H L K n
10
−3
J T = J n , drf + J p , dif
or dp
(a) J p , dif = − eD p and
J n ( x = 0) = 2 A / cm
2
dx
Then
F I where L = 12 µm
−x
J = J p ( x = 0) + J n ( x = 0) = 3.2 + 2 p( x ) = 10 exp
H LK
15

or so
J = 5.2 A / cm
2

= − eD b10 g
F −1I expF − x I
H LK H L K
15
J p , dif p

or

58
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

b1.6x10 g(12)b10 g expF − x I b gLMN A + B expFH −dx IK OPQ

−19 15
−14
J p , dif =
12 x10
−4
H 12 K 100 = 1.54 x10

or b3.31x10 g B expF − x I
−17

F − x I A / cm −
HdK
= +1.6 exp
H LK d
2
J p , dif
This equation is valid for all x , so
(b) 100 = 154
. x10
−14
A
J n , drf = J T − J p , dif or
A = 6.5 x10
15
or
F −xI Also
F −xI
J n , drf = 4.8 − 1.6 exp
H LK 154
. x10
−14
B exp
HdK
(c)
J n , drf = eµ n nO Ε b3.31x10 g B expF − x I = 0
−17

Then
−
d HdK
b1.6x10 g(1000)b10 gΕ
−19 16
which yields

F −xI
−3
d = 2.15 x10 cm
= 4.8 − 1.6 exp
H LK At x = 0 , eµ n n( 0)Ε = 50
which yields so that
LM F − x I OP V / cm b
50 = 1.6 x10
−19
g(8000)(12)( A + B)
N
Ε = 3 − 1 × exp
H L KQ which yields B = −3.24 x10
15

Then
5.30 F −xI
n( x ) = 6.5 x10 − 3.24 x10 exp
HdK
15 15 −3
cm
dn( x )
(a) J = eµ n n( x )Ε + eDn
dx (b)
At x = 0, n(0) = 6.5 x10 − 3.24 x10
15 15
Now µ n = 8000 cm / V − s so that
2

Dn = ( 0.0259 )(8000) = 207 cm / s

2 Or
n(0) = 3.26 x10 cm
15 −3
Then
b
100 = 1.6 x10
−19
g(8000)(12)n( x) At x = 50 µm ,

+b1.6 x10 g(207 )

dn( x ) F −50I
n(50) = 6.5 x10 − 3.24 x10 exp
H 215. K
15 15
−19

dx
which yields or
n(50) = 6.18 x10 cm
−3
dn( x )
15

. x10 n( x ) + 3.31x10
−14 −17
100 = 154
dx (c)
Solution is of the form At x = 50 µm , J drt = eµ n n(50)Ε
−x F I b
= 1.6 x10
−19
g(8000)b6.18x10 g(12) 15
n( x ) = A + B exp
d H K or
so that J drf ( x = 50) = 94.9 A / cm
2

dn( x ) − B −x F I
dx
=
d
exp
d H K Then
J dif ( x = 50) = 100 − 94.9 ⇒
Substituting into the differential equation, we
have J dif ( x = 50) = 51
2
. A / cm

59
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

or
5.31
F I F x − 1I Ε + 41.44
n = ni exp
H
E F − E Fi
K
80 = 1.6
HL K
kT Solving for the electric field, we find
(a) E F − E Fi = ax + b , b = 0.4 38.56
0.15 = a 10 b g + 0.4 so that a = −2.5x10
−3 2
Ε=
x F I
Then L
−1
H K
E F − E Fi = 0.4 − 2.5 x10 x
2
(b)
For J n = −20 A / cm
2
So
FG 0.4 − 2.5x10 x IJ 2
F x − 1I Ε + 41.44
n = ni exp
H kT K 20 = 1.6
HL K
(b) Then
dn 21.44
J n = eDn Ε=
F1 − x I
dx
FG −2.5x10 IJ expFG 0.4 − 2.5x10 x IJ
2 2
H LK
= eDn ni
H kT K H kT K 5.33
Assume T = 300 K , kT = 0.0259 eV , and
dn
−3 (a) J = eµ n nΕ + eDn
ni = 1.5 x10 cm
10
dx
Then Let n = N d = N do exp( −αx ) , J = 0

Jn =
b
− 1.6 x10
−19
g(25)b1.5x10 gb2.5x10 g 10 2
Then
(0.0259) 0 = µ n N do exp( −αx ) Ε + Dn N do ( −α ) exp( −αx )

FG 0.4 − 2.5x10 x IJ 2 or

H 0.0259 K
× exp D
0 = Ε + n ( −α )
µn
or
F 0.4 − 2.5x10 x IJ
expG
2
Since
Dn
=
kT

H 0.0259 K
−4
J n = −5.79 x10 µn e
So
(i) At x = 0 , J n = −2.95x10 A / cm
3 2
F kT I
(ii) At x = 5 µm , J n = −23.7 A / cm
2
Ε =α
H eK
(b)
5.32
V = − z Εdx = −α
1/ α
F kT I z dx 1/ α

(a) J n = eµ n nΕ + eDn
dn
0
HeK 0
dx
LM F kT I OP ⋅ F 1 I so that V = −F kT I
b
−80 = 1.6 x10
−19
g(1000)b10 gFH1 − Lx IK Ε
16
=− α
N H e KQ HαK HeK
+b1.6 x10 g(25.9 )G
F −10 IJ 16
5.34
H LK
−19

From Example 5.5

where L = 10 x10
−4
= 10 cm
−3 b g = (0.0259)b10 g
(0.0259) 1019 3

We find
Ε = x
b10 − 10 xg b1 − 10 xg
16 19 3

F x I Ε − 41.44 V = − z Ε dx = −( 0.0259 )b10 g z

10 −4 10 −4
−80 = 1.6Ε − 1.6
H 10 K −3

0
x
dx
b1 − 10 xg
3

0
3

60
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

= −(0.0259 ) 10 b gFH 10−1 IK ln 1 − 10 x

3
3
3 10 −4
0
(b)
0 = J drf + J dif

= (0.0259 ) ln(1 − 0.1) − ln(1) Now

or J drf = eµ n nΕ
V = −2.73 mV
b
= 1.6 x10 g(6000)b5x10 gLMNexpFH −Lx IK OPQΕ
−19 16

5.35
F −xI
From Equation [5.40]
F kT I FG 1 IJ ⋅ dN ( x)
= 48Ε exp
H LK
H e K H N ( x)K dx
Εx = −
d
d
We have
J drf = − J dif
Now so
F 1 IJ ⋅ dN ( x)
1000 = −(0.0259 )G F − x I = 1.24 x10 expF − x I
H N ( x)K dx H LK H LK
d
48Ε exp
5

or which yields
dN d ( x ) Ε = 2.58 x10 V / cm
3

+ 3.86 x10 N d ( x ) = 0
4

dx
Solution is of the form 5.37
N d ( x ) = A exp( −αx ) Computer Plot
and
dN d ( x ) 5.38
= − Aα exp( −αx )
F kT I = (925)(0.0259)
dx
Substituting into the differential equation
(a) D = µ
H eK
− Aα exp( −αx ) + 3.86 x10 A exp( −αx ) = 0 so
4

D = 23.96 cm / s
2
which yields
−1
α = 3.86 x10 cm
4
(b)
For D = 28.3 cm / s
2
At x = 0 , the actual value of N d (0) is arbitrary.
28.3
µ= ⇒ µ = 1093 cm / V − s
2

5.36 0.0259
(a) J n = J drf + J dif = 0
dn dN d ( x ) 5.39
J dif = eDn = eDn We have L = 10 cm = 10 m ,
−1 −3

dx dx
eDn F I −x
−2 −4
W = 10 cm = 10 m , d = 10 cm = 10 m
−3 −5

=
(− L)
⋅ N do exp
H LK (a)
We have
We have
F kT I = (6000)(0.0259) = 155.4 cm / s
HeK
−3 −3 −3
p = 10 cm = 10 m , I x = 1 mA = 10
16 22
Dn = µ n
2
A
Then
Then
−b1.6 x10 g(155.4 )b5 x10 g
I x Bz b10 gb3.5x10 g
−3 −2
−19
F −xI 16
VH = =
b1.6x10 gb10 gb10 g
H LK
−19 22 −5
J dif =
b0.1x10 g exp−4

or
epd

or VH = 2.19 mV
F − x I A / cm
J = −1.24 x10 exp
H LK
5 2
dif

61
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 5
Solutions Manual Problem Solutions

(b) 5.42

EH =
VH
=
2.19 x10
−2
−3
(a) VH = E H W = − 16.5x10 b −3
gb5x10 g −2

W 10 or
or VH = −0.825 mV
E H = 0.219 V / cm (b)
VH = negative ⇒ n-type
5.40 (c)
− I x Bz b
gb5x10 g
− 250 x10
−6 −2

n=
− I x Bz
(a) VH =
ned
=
b5x10 gb1.6x10 gb5x10 g
21 −19 −5
edVH
or b
− 0.5 x10 gb6.5x10 g
−3 −2

(b)
VH = −0.3125 mV =
b1.6x10 −19
gb5x10 gb−0.825x10 g
−5 −3

or
−3
VH −0.3125 x10 n = 4.92 x10 m = 4.92 x10 cm
21 −3 15 −3
EH = = −2
⇒
W 2 x10 (d)
−2
E H = −1.56 x10 V / cm Ix L
µn =
(c) enVxWd
µn =
Ix L
b0.5x10 gb0.5x10 g−3 −2

enVxWd
b gb g
250 x10
−6
10
−3
=
b1.6x10 −19
gb4.92 x10 g(1.25)b5x10 gb5x10 g
21 −4 −5

or
=
b1.6x10 −19
gb5x10 g(0.1)b2 x10 gb5x10 g
21 −4 −5
µ n = 0.102 m / V − s = 1020 cm / V − s
2 2

or
µ n = 0.3125 m / V − s = 3125 cm / V − s
2 2
5.43
(a) VH = negative ⇒ n-type
5.41 − I x Bz −3
(b) n = ⇒ n = 8.68 x10 cm
14
(a) VH = positive ⇒ p-type
edVH
(b)
Ix L
I B I B (c) µ n = ⇒ µ n = 8182 cm / V − s
2

VH = x z ⇒ p = x z enVxWd
epd eVH d
b0.75x10 gb10 g −3 −1
(d) σ =
1
= eµ n n = 1.6 x10 b −19
g(8182)(8.68x10 ) 14

=
b1.6x10 gb5.8x10 gb10 g
−19 −3 −5
ρ
or ρ = 0.88 (Ω − cm)
or
−3 −3
p = 8.08 x10 m = 8.08 x10 cm
21 15

(c)
Ix L
µp =
epVxWd
b0.75x10 gb10 g −3 −3

=
b1.6x10 −19
gb8.08x10 g(15)b10 gb10 g 21 −4 −5

or
−2
µ p = 3.87 x10 m / V − s = 387 cm / V − s
2 2

62
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

Chapter 6
Problem Solutions 4
2.25 x10 −3 −1
G= ⇒ G = 1125
9
6.1 −6
. x10 cm s
20 x10
n-type semiconductor, low-injection so that
(c)
δp
13
5 x10 R = G = 1125
. x10 cm s
9 −3 −1
R′ = = −6
τ pO 10
or 6.4
R ′ = 5 x10 cm s
19 −3 −1

(a) E = hν =
hc
=
b6.625x10 gb3x10 g
−34 8

−10
λ 6300 x10
6.2 or
nO E = 3.15 x10
−19
J This is the energy of 1
(a) RnO =
τ nO photon.
and Now

nO =
ni
2

=
b10 g 10 2

= 10 cm
4 −3
1 W = 1 J / s ⇒ 3.17 x10
18
photons/s
Volume = (1)(0.1) = 0.1 cm
+3
16
pO 10
Then
Then
18
4 317
. x10
10 −3 −1 g= ⇒
RnO = ⇒ RnO = 5 x10 cm s
10
−7 0.1
2 x10
g = 3.17 x10 e − h pairs / cm − s
19 3
(b)
δn
12
10 (b)
b gb10x10 g
−3 −1
Rn = = or Rn = 5 x10 cm s
18
−6
δn = δp = gτ = 317
19
τ nO 2 x10
−7
. x10
so or
−3
δn = δp = 3.17 x10 cm
14
∆Rn = Rn − RnO = 5 x10 − 5 x10 ⇒
18 10

−3 −1
∆Rn ≈ 5 x10 cm s
18

6.5
We have
6.3
∂p p
(a) Recombination rates are equal +
= −∇ • Fp + g p −
nO p ∂t τp
= O
τ nO τ pO and
−3
J p = eµ p pΕ − eD p ∇p
nO = N d = 10 cm
16

The hole particle current density is

pO =
ni
2

=
b15. x10 g 10 2

= 2.25 x10 cm
4 −3 +
Fp =
Jp
= µ p pΕ − D p ∇p
nO 10
16
( + e)
So Now
∇ • Fp = µ p ∇ • ( pΕ ) − Dp ∇ • ∇p
16 4 +
10 2.25 x10
= −6
τ nO 20 x10 We can write
or ∇ • ( pΕ ) = Ε • ∇p + p∇ • Ε
τ nO = 8.89 x10 s
+6 and
∇ • ∇p = ∇ p
2
(b) Generation Rate = Recombination Rate
So so

65
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

By charge neutrality
∇ • Fp = µ p (Ε • ∇p + p∇ • Ε ) − Dp ∇ p
+ 2
δn = δp ≡ δn ⇒ ∇(δn) = ∇(δp)
Then ∂(δn ) ∂(δp )
and ∇ (δn ) = ∇ (δp ) and =
2 2

∂p p ∂t ∂t
= − µ p (Ε • ∇p + p∇ • Ε ) + D p ∇ p + g p −
2

∂t τp Also
p n
We can then write gn = g p ≡ g , = ≡R
Dp ∇ p − µ p (Ε • ∇p + p∇ • Ε )
2 τp τn
Then we can write
p ∂p
+gp − = (1) Dp ∇ (δn) − µ p Ε • ∇(δn) + p∇ • Ε
2

τp ∂t
∂(δn )
+g − R =
6.6 ∂t
From Equation [6.18] and
(2) Dn ∇ (δn ) + µ n Ε • ∇(δn ) + n∇ • Ε
2
∂p + p
= −∇ • Fp + g p −
∂t τp ∂(δn )
+g − R =
∂p ∂t
For steady-state, =0 Multiply Equation (1) by µ n n and Equation (2)
∂t
Then by µ p p , and then add the two equations.
+
0 = −∇ • Fp + g p − R p We find
and for a one-dimensional case, bµ nD + µ pD g∇ (δn)
n p p n
2

+ µ n µ p ( p − n )Ε • ∇(δn )
+
dFp
= g p − R p = 10 − 2 x10 ⇒
20 19

dx
dFp
+
−3 −1
b g
+ µ n n + µ p p ( g − R) = µ n n + µ p p b g ∂(∂δtn)
= 8 x10 cm s
b g
19

dx Divide by µ n n + µ p p , then

FG µ nD + µ pD IJ ∇ (δn)
H µ n+µ p K
n p p n 2
6.7
From Equation [6.18], n p

0=−
dFp
+

+ 0 − 2 x10
19 L µ µ ( p − n) OPΕ • ∇(δn)
+M
n p

or
dx
N µ n+µ p Q n p

∂(δn )
+( g − R ) =
+
dFp −3 −1
= −2 x10 cm s
19
∂t
dx Define
µ n nD p + µ p pDn Dn Dp (n + p )
6.8 D′ = =
We have the continuity equations µ nn + µ p p Dn n + D p p
(1) Dp ∇ (δp) − µ p Ε • ∇(δp) + p∇ • Ε
2
µ n µ p ( p − n)
and µ ′ =
p ∂(δp ) µ nn + µ p p
+ gp − =
τp ∂t Then we have
∂(δn )
and D ′∇ (δn ) + µ ′Ε • ∇(δn ) + ( g − R ) =
2

(2) Dn ∇ (δn ) + µ n Ε • ∇(δn ) + n∇ • Ε

2 ∂t
Q.E.D.
n ∂(δn )
+ gn − =
τn ∂t

66
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

6.9 Then
For Ge: T = 300 K , ni = 2.4 x10 cm
13 −3
a a f
σ = eµ n nO + δp + eµ p pO + δp f
Nd F N I +n 2 or
σ = eµ n + eµ p + eb µ + µ g(δp)
n= +
H2Kd 2
i n O p O n p
2
so
= 10 +
13
b10 g + b2.4 x10 g
13 2 13 2
∆σ = eb µ + µ g(δp) n p

or In steady-state, δp = g ′τ
−3
n = 3.6 x10 cm
13
So that
Also b
∆σ = e µ n + µ p g ′τ pO gb g
p=
2
ni
=
b2.4 x10 g 13 2

= 1.6 x10 cm
13 −3
13
n 3.6 x10 6.11
We have n-type, so that minority carriers are holes.
µ n = 3900 , µ p = 1900 Uniform generation throughout the sample
means we have
Dn = 101 , D p = 49.2
δp ∂(δp )
Now g′ − =
τ pO ∂t
Dn D p (n + p )
D′ = Homogeneous solution is of the form
Dn n + Dp p
FG −t IJ
b g
(101)(49.2) 3.6 x1013 + 1.6 x1013 (δp) H = A exp
Hτ K
(101)b3.6 x10 g + (49.2)b1.6 x10 g
= 13 13
pO

and the particular solution is

or (δp) P = g ′τ pO
D ′ = 58.4 cm / s
2
so that the total solution is
Also
(δp) = g ′τ pO + A exp
FG −t IJ
µ′ =
µ n µ p ( p − n) Hτ K pO

µ nn + µ p p At t = 0 , δp = 0 so that
b g
(3900)(1900) 1.6 x1013 − 3.6 x1013 0 = g ′τ pO + A ⇒ A = − g ′τ pO
(3900)b3.6 x10 g + (1900)b1.6 x10 g
= 13 13 Then
or
δp = g ′τ pO 1 − exp
LM
FG −t IJ OP
µ ′ = −868 cm / V − s
2
Hτ KQ
N pO

Now The conductivity is

n p 3.6 x10
13
1.6 x10
13
σ = eµ n + eµ p + eb µ + µ g(δp)
n O p O n p
= ⇒ =
τn τp τn 24 µs ≈ eµ n + eb µ + µ g(δp)
n O n p

which yields so
τ n = 54 µs σ = b1.6 x10 g(1000)b5x10 g
−19 16

+b1.6 x10 g(1000 + 420)b5 x10 gb10 g

−19 21 −7

6.10
σ = eµ n n + eµ p p L F −t IJ OP
× M1 − expG
With excess carriers present
n = nO + δn and p = pO + δp
N Hτ KQ pO

Then
For an n-type semiconductor, we can write
δn = δp ≡ δp

67
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

σ = 8 + 0.114 1 − exp
LM FG −t IJ OP 6.14

N Hτ KQ pO
(a) p-type GaAs,

Dn ∇ (δn ) + µ n Ε • ∇(δn ) + g ′ −
2 δn
=
∂(δn )
where τ pO = 10
−7
s τ nO ∂t
Uniform generation rate, so that
∇(δn ) = ∇ (δn ) = 0 , then
2
6.12
n-type GaAs: δn ∂(δn )
b
∆σ = e µ n + µ p (δp) g g′ −
τ nO ∂t
=

In steady-state, δp = g ′τ pO . Then The solution is of the form

b
∆σ = 1.6 x10
−19
g(8500 + 400)b2 x10 gb2 x10 g 21 −7 δn = g ′τ nO 1 − exp − t τ nO a f
Now
or
∆σ = 0.57 (Ω − cm)
−1
Rn′ =
δn
τ nO
= g ′ 1 − exp − t τ nO a f
The steady-state excess carrier recombination
rate (b)
−3
Maximum value at steady-state, nO = 10 cm
14
R ′ = g ′ = 2 x10 cm s
21 −3 −1

So
6.13 (δn)O 10
14

(δn)O = g ′τ nO ⇒ τ nO = =
For t < 0 , steady-state, so g′ 10
20

δp(0) = g ′τ pO = 5x10 3x10 ⇒

21 −7
b gb g or
−6
δp(0) = 1.5x10 cm
15 −3 τ nO = 10 s
Now (c)
bg
σ = eµ n nO + e µ n + µ p (δp)
Determine t at which
δn = (0.75) x10 cm
14 −3

For t ≥ 0 , δp = δp(0) expb − t τ g

(i)
pO We have
Then 0.75 x10 = 10 1 − exp − t τ nO
14 14
a f
σ = b1.6 x10 g(1350)b5x10 g
−19 16
which yields
+b1.6 x10 g(1350 + 480)b15
−19
. x10 g expb − t τ g 1 F I
H K
15
pO t = τ nO ln ⇒ t = 1.39 µs
or 1 − 0.75
σ = 10.8 + 0.439 expb − t τ g
−3
δn = 0.5x10 cm
14
(ii)
pO

We have that We find

AσV 1 F I
I = AJ = AσΕ =
L
t = τ nO ln
1 − 0.5H⇒ t = 0.693 µs
K
−3
δn = 0.25x10 cm
14
so (iii)
b10 g(5) 10.8 + 0.439 expb−t τ g
−4
We find
I =
(0.10)
pO 1 F I
or
t = τ nO ln
H
1 − 0.25
⇒ t = 0.288 µs
K
I = 54 + 2.20 exp − t τ pO b g mA 6.15
where (a)
τ pO = 3x10 s
−7

pO =
2
ni
=
b15. x10 g 2.25x10 cm
10 2

4 −3
15
nO 10
Then

68
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

−6
where τ nO = 10 s
4
pO pO 2.25 x10
R pO = ⇒ τ pO = =
τ pO
11 −6
R pO 10 At t = 2 x10 s
or
−7
a f b g 1 − expa−2 1f
δn 2 µs = 10
14

τ pO = 2.25x10 s or
Now δna2 µsf = 0.865 x10 cm
14 −3

δp
14
10
R p′ =
−6
= ⇒ For t > 2 x10 s
L −bt − 2 x10 g OP
−7
τ pO 2.25 x10 −6

or δn = 0.865 x10 exp M

14

R p′ = 4.44 x10 cm s
20 −3 −1
N τ Q nO

Recombination rate increases by the factor (b) (i) At t = 0 , δn = 0

R p′ 4.44 x10
20
R p′ −6
(ii) At t = 2 x10 s , δn = 0.865 x10 cm
14 −3

= ⇒ = 4.44 x10
9
11
R pO 10 R pO (iii) At t → ∞ , δn = 0
(b)
From part (a), τ pO = 2.25x10
−7
s 6.18
p-type, minority carriers are electrons
∂(δn )
6.16 In steady-state, = 0 , then
−7
∂t
Silicon, n-type. For 0 ≤ t ≤ 10 s (a)
b g
δp = g ′τ pO 1 − exp − t τ pO
Dn
d (δn )
2

−
δn
=0
= b 2 x10 gb10 g 1 − expb − t τ g τ nO
2
20 −7 dx
pO

or or
δp = 2 x10 1 − expb − t τ g d (δn ) δn
2
13
pO
2 2
−=0
−7
dx Ln
At t = 10 s,
Solution is of the form
b g = 2 x10 1 − exp(−1)
δp 10
−7 13
a
δn = A exp − x Ln + B exp + x Ln f a f
or But δn = 0 as x → ∞ so that B ≡ 0 .
δpb10 g = 1.26 x10 cm
−7 13 −3 −3
At x = 0 , δn = 10 cm
13

Then
a f
−7
For t > 10 s,
L −bt − 10 g OP δn = 10 exp − x Ln
13
−7

δp = b1.26 x10 g exp M Now

13

N τ Q F kT I
HeK
pO
Ln = Dnτ nO , where Dn = µ n
where
−7
τ pO = 10 s or
Dn = (0.0259 )(1200) = 311
2
. cm / s
6.17 Then
(a) For 0 < t < 2 x10 s
−6
Ln = (311
. ) 5x10 ⇒
−7
b g
δn = g ′τ nO 1 − exp − t τ nO a f or
b gb10 g 1 − exp −t τ
= 10
20 −6
nO
Ln = 39.4 µm
or
δn = 10 1 − expa − t τ f
14
nO

69
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

(b)
d (δn ) b g expa− x L f
eDn 10
13 The excess concentration δn must remain finite,
J n = eDn
dx
=
a− L f n
n so that B = 0 . At x = 0 , δn(0) = 10 cm , so
15 −3

=
b
− 1.6 x10
−19
g(311. )b10 g expa− x L f
13

n
the solution is
δn = 10 exp − x Ln
15
a f
−4
39.4 x10
We have that µ n = 1050 cm / V − s , then
2

or
a f F kT I = (1050)(0.0259) = 27.2 cm / s
J n = −12.6 exp − x Ln
H eK
2
mA / cm Dn = µ n
2

Then
6.19
L = D τ = (27.2 )b8 x10 g ⇒
−7
−3
(a) p-type silicon, p pO = 10 cm
14
and n n nO

n pO =
ni
2

=
b15. x10 g 10 2

= 2.25 x10 cm
6 −3
(a)
Ln = 46.6 µm
14
p pO 10 Electron diffusion current density at x = 0
(b) Excess minority carrier concentration d (δn )
J n = eDn x=0
δn = n p − n pO dx
At x = 0 , n p = 0 so that
= eDn
d
dx
a f
10 exp − x Ln
15

x=0
δn(0) = 0 − n pO = −2.25x10 cm
6 −3

− eD b10 g −b1.6 x10 g(27.2 )b10 g

15 −19 15

(c) For the one-dimensional case, = =

n
−4
d (δn ) δn Ln 46.6 x10
2

Dn − =0 or
τ nO
2
dx
J n = −0.934 A / cm
2
or
d (δn )
2
δn Since δp = δn , excess holes diffuse at the same
− = 0 where Ln = Dnτ nO
2
2 2 rate as excess electrons, then
dx Ln
J p ( x = 0) = +0.934 A / cm
2
The general solution is of the form
a
δn = A exp − x Ln + B exp + x Ln f a f (b)
For x → ∞ , δn remains finite, so that B = 0 . At x = Ln ,
Then the solution is
a f d (δn ) b g exp(−1)
eDn 10
15

δn = − n pO exp − x Ln J n = eDn
dx
x = Ln =
a− L f n

6.20 =
b
− 1.6 x10
−19
g(27.2)b10 g exp(−1)15

−4
p-type so electrons are the minority carriers 46.6 x10
δn ∂(δn ) or
Dn ∇ (δn ) + µ n Ε • ∇(δn ) + g ′ − =
2

J n = −0.344 A / cm
2
τ nO ∂t
∂(δn ) Then
For steady state, = 0 and for x >0, J p = +0.344 A / cm
2

∂t
g ′ = 0 , Ε = 0 , so we have
d (δn )
2
δn d (δn )
2
δn 6.21
Dn − = 0 or − =0 n-type, so we have
τ nO
2 2 2
dx dx Ln
d (δp ) d (δp ) δp
2

Dp − µ pΕ O − =0
where Ln = Dnτ nO
2
τ pO
2
dx dx
The solution is of the form
a
δn = A exp − x Ln + B exp + x Ln f a f Assume the solution is of the form
δp = A exp( sx )

70
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

6.23
Then (a) From Equation [6.55],
d (δp ) d (δp ) d (δn ) d (δn ) δn
2 2

= As exp( sx ) , = As exp( sx ) + µ nΕ O − =0
2
Dn
τ nO
2 2
dx dx dx dx
Substituting into the differential equation or
A exp( sx ) d (δn )
2
µn d (δn ) δn
D p As exp( sx ) − µ p Ε O As exp( sx ) − =0
2

τ pO 2
+ 2
ΕO
=0 −
dx Dn dx Ln
or We have that
Dp s − µ p Ε O s −
2 1
=0 Dn kT F I
τ pO µn
=
e H K
so we can define

Dividing by D p µn ΕO 1

s −
2
µp
ΕOs −
1
=0
Dn
ΕO =
kT e a f ≡
L′
Dp
2
Lp Then we can write
d (δn ) 1 d (δn ) δn
2
The solution for s is
L F µ Ε IJ + 4 OP dx
2
⋅
L ′ dx
+ − 2 =0
Ln
s= M
2
1 µp
Ε ± G
2 MD H D K L PQ
p
Solution will be of the form
N
O O 2
p p p δn = δn(0) exp( −αx ) where α > 0
This can be rewritten as Then
LM
1 µ LΕ F µ L Ε IJ + 1OP 2 d (δn )
= −α (δn ) and = α (δn )
d (δn )
2
2

± G
L M 2D H 2 D K PQ
p p O p p O
s= dx dx
2

N p p p Substituting into the differential equation, we

have
We may define
µ p LpΕ O 1 δn
α (δn) + ⋅ −α (δn ) − 2 = 0
2

β≡ L′ Ln
2 Dp
or
Then
α 1
α − − 2 =0
2
1
s= β ± 1+ β
2
L ′ Ln
Lp
which yields
In order that δp = 0 for x > 0 , use the minus
R| L + F L I + 1U|
S H 2 L′ K V|
2

sign for x > 0 and the plus sign for x < 0 . 1

α=
L | 2 L′
n n

Then the solution is

a f
δp( x ) = A exp s− x for x > 0
T n W
1
δp( x ) = A expa s x f for x < 0 +
Note that if Ε O = 0 , L ′ → ∞ , then α =
Ln
where (b)
s± =
1
β ± 1+ β F dT I
HeK
2
Ln = Dnτ nO where Dn = µ n
Lp
or
Dn = (1200)(0.0259 ) = 311
2
6.22 . cm / s
Computer Plot Then
Ln = (311 b g
. ) 5 x10 = 39.4 µm
−7

For Ε O = 12 V / cm , then

71
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

L′ =
akT ef = 0.0259 = 21.6x10 −4
cm
d (δp )
2

= 0 so that
d (δp )
= C3 and
ΕO 12 dx
2
dx
Then δp = C3 x + C4
−1
α = 5.75x10 cm
2
For −3 L < x < − L , g ′ = 0 so that
(c)
d (δp ) d (δp )
2

Force on the electrons due to the electric field is =0, = C5 , and

2
in the negative x-direction. Therefore, the dx dx
effective diffusion of the electrons is reduced and δp = C5 x + C6
the concentration drops off faster with the The boundary conditions are
applied electric field.
(1) δp = 0 at x = +3 L ; (2) δp = 0 at
x = −3 L ;
6.24
(3) δp continuous at x = + L ; (4) δp
p-type so the minority carriers are electrons, then
δn ∂(δn ) continuous at x = − L ; The flux must be
Dn ∇ (δn ) + µ n Ε • ∇(δn ) + g ′ − =
2
continuous so that
τ nO ∂t d (δp ) d (δp )
Uniform illumination means that (5) continuous at x = + L ; (6)
dx dx
∇(δn ) = ∇ (δn ) = 0 . For τ nO = ∞ , we are
2
continuous at x = − L .
left with Applying these boundary conditions, we find
d (δn )
dt
= g ′ which gives δn = g ′t + C1
G′
δp = O 5 L − x
2 Dp
2 2
bfor − L < x < + Lg
For t < 0 , δn = 0 which means that C1 = 0 . GO′ L
Then δp = (3 L − x ) for L < x < 3 L
Dp
δn = GO′ t for 0 ≤ t ≤ T
GO′ L
d (δn ) δp = (3 L + x ) for −3L < x < − L
For t > T , g ′ = 0 so we have =0 Dp
dt
Or
δn = GO′ T (No recombination) 6.26
d 0.75
µp =
F I b160 x10 g
= = 1875 cm / V − s
2

Ε Ot 2.5
6.25
H 1K
−6

n-type so minority carriers are holes, then

δp ∂(δp ) Then
D p ∇ (δp ) − µ p Ε • ∇(δp ) + g ′ − =
2

τ pO ∂t
D =
b µ Ε g ( ∆t ) p O
2 2

∂(δp )
p
16t O
We have τ pO = ∞ , Ε = 0 , = 0 (steady
∂t
LM(1875)F 2.5I OP b75.5x10 g 2

N H 1 KQ
−6 2
state). Then we have
d (δp ) d (δp )
16b160 x10 g
2 2
g′ =
+ g ′ = 0 or
−6
Dp 2 2
=−
dx dx Dp
which gives
For − L < x < + L , g ′ = GO′ = constant. Then Dp = 48.9 cm / s
2

d (δp ) GO′ From the Einstein relation,

=− x + C1 and
dx Dp Dp kT 48.9
= = = 0.02608 V
GO′ µp e 1875
δp = − x + C1 x + C2
2

2 Dp
For L < x < 3 L , g ′ = 0 so we have

72
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

and
6.27
F − x IJ FG p + δp IJ
H n K
E Fi − E Fp = kT ln O

expG
2

Assume that f ( x , t ) = (4πDt )

H 4 Dt K
−1/ 2
i

F 2.25x10 + 10 IJ
= (0.0259 ) lnG
4 15

is the solution to the differential equation

F ∂ f IJ = ∂f H 1.5x10 K 10

DG
2

H ∂x K ∂t 2
or
E Fi − E Fp = 0.2877 eV
To prove: we can write
∂f F −2 x I expFG − x IJ 2

H 4 Dt K H 4 Dt K
= (4πDt )
−1/ 2
6.30
∂x (a) p-type
and FG p IJ
F −2 x I expFG − x IJ E Fi − E F = kT ln
Hn K
O
2
∂ f
2 2

= (4πDt )
H 4 Dt K H 4 Dt K
−1/ 2
i

∂x
2

FG 5x10 IJ 15

F −2 I expFG − x IJ 2 = ( 0.0259 ) ln
H 15. x10 K 10
+(4πDt )
H 4 Dt K H 4 Dt K
−1/ 2

or
Also E Fi − E F = 0.3294 eV
∂f
= ( 4πDt ) G
F − x IJ F −1I expFG − x IJ 2 2
(b)
H 4 D K H t K H 4 Dt K
−1/ 2
−3
δn = δp = 5x10 cm
14
∂t
2

F −1I t expFG − x IJ 2 and

b1.5x10 g
+(4πD)
H 2 K H 4 Dt K
−1/ 2 −3 / 2 2
10
−3
= = 4.5 x10 cm
4
nO 15
5 x10
∂ f ∂f
2

Substituting the expressions for and Then

∂x ∂t
2

into the differential equation, we find 0 = 0 , FG n + δn IJ

E Fn − E Fi = kT ln
H n K
O
Q.E.D.
i

6.28 F 4.5x10 + 5x10 IJ

= ( 0.0259 ) lnG
4 14

Computer Plot
H 1.5x10 K 10

6.29 or
n-type E Fn − E Fi = 0.2697 eV
δn = δp = g ′τ pO = 10 b gb10 g = 1021 −6 15
cm
−3
and
We have nO = 10 cm
16 −3 FG p + δp IJ
E Fi − E Fp = kT ln
H n K
O

ni
2
b15. x10 g 10 2
i

pO = = 16
= 2.25 x10 cm
4 −3
F 5x10 + 5x10 IJ
= ( 0.0259 ) lnG
15 14

Now
nO 10
H 15. x10 K 10

FG n + δn IJ or
E Fn − E Fi = kT ln
H n K E Fi − E Fp = 0.3318 eV
O

F 10 + 10 IJ
= (0.0259 ) lnG
16 15

H 15. x10 K 10

or
E Fn − E Fi = 0.3498 eV

73
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

6.31 Neglecting the minority carrier electron

n-type GaAs; nO = 5 x10 cm
16 −3 concentration

b1.8x10 g 2 L b10 g( x) OP
= kT ln M
14

N a50 µmfb1.8x10 g Q
6
2
ni −5 −3
E Fn − E Fi
pO = = 16
= 6.48 x10 cm 6

nO 5 x10
We find
We have
x( µm) E Fn − E Fi (eV )
δn = δp = (0.1) N d = 5x10 cm
15 −3

(a) 0 −0.581
FG n + δn IJ 1 +0.361
E Fn − E Fi = kT ln
H n K
O
2 +0.379
i

F 5x10 + 5x10 IJ
= ( 0.0259 ) lnG
16 15
10 +0.420

H 1.8x10 K 6
20
50
+0.438
+0.462
or
E Fn − E Fi = 0.6253 eV Quasi-Fermi level for holes: we have
We have FG p + δp IJ
FG N IJ E Fi − E Fp = kT ln
H n K
O

E F − E Fi = kT ln
Hn K
d i

−3
We have pO = 10 cm , δp = δn
16
i

F 5x10 IJ
= (0.0259 ) lnG
16 We find
H 1.8x10 K 6 x( µm) E Fi − E Fp (eV )
or 0 +0.58115
E F − E Fi = 0.6228 eV 50 +0.58140
Now
a
E Fn − E F = E Fn − E Fi − E F − E Fi fa f 6.33
= 0.6253 − 0.6228
so (a) We can write
E Fn − E F = 0.0025 eV FG p IJ
Hn K
E Fi − E F = kT ln O

(b)
FG IJ
i

pO + δp and
E Fi − E Fp = kT ln
H ni K E − E = kT lnG
F p + δp IJ
H n K
O

= (0.0259 ) ln
FG 5x10 IJ15
Fi Fp
i

H 1.8x10 K 6 so that
a f ( ) =E −E
E Fi − E Fp − E Fi − E F
or F Fp

E Fi − E Fp = 0.5632 eV F p + δp IJ − kT lnFG p IJ
= kT lnG
H n K Hn K
O O

i i

6.32 or
Quasi-Fermi level for minority carrier electrons FG p + δp IJ = (0.01)kT
E − E = kT lnG
F n + δn IJ E F − E Fp = kT ln
H p K
O

H n K
O
O
Fn Fi
i Then
We have pO + δp
F x IJ
δn = b10 gG pO
= exp(0.01) = 1.010 ⇒

H 50 µm K
14

74
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

δp 6.37
= 0.010 ⇒ low-injection, so that We have that
pO
δp = 5x10 cm
12 −3
R=
Cn C p N t np − nib 2
g
Cn (n + n ′ ) + C p ( p + p ′ )
(b)
F δp I
≈ kT lnG J
bnp − n g 2

τ an + n f + τ a p + n f
i
=
E Fn − E Fi
Hn K i
pO i nO i

FG 5x10 IJ 12 If n = n + δn and p = p + δn , then

O

an + δnfa p + δnf − n
O
= ( 0.0259 ) ln
H 15. x10 K 10
2

τ an + δn + n f + τ a p + δn + n f
R= O O i

or pO O i nO O i

n p + δnan + p f + (δn ) − n
E Fn − E Fi = 0.1505 eV 2 2

τ an + δn + n f + τ a p + δn + n f
= O O O O i

pO O i nO O i
6.34
If δn << ni , we can neglect the (δn ) ; also
2
Computer Plot
nO pO = ni
2

6.35
Then
Computer Plot
af
δn nO + pO
6.36
(a)
R=
τ pO an + n f + τ a p + n f
O i nO O i

R=
b
Cn C p N t np − ni
2
g (a)
For n-type, nO >> pO , nO >> ni
Cn (n + n ′ ) + C p ( p + p ′ ) Then

=
bnp − n gi
2 R
=
1
δn τ pO
+7
= 10 s
−1

τ pO (n + n ′) + τ nO ( p + p ′ )
(b)
For n = p = 0
Intrinsic, nO = pO = ni
− ni − ni
2

R= ⇒ R= Then
τ pO ni + τ nO ni τ pO + τ nO R 2 ni
(b)
=
a f a f
δn τ pO 2 ni + τ nO 2ni
We had defined the net generation rate as or
a
g − R = g O + g ′ − RO + R ′ where f R
=
1
=
1
⇒
g O = RO since these are the thermal equilibrium δn τ pO + τ nO 10 + 5 x10
−7 −7

generation and recombination rates. If g ′ = 0 ,

R +6 −1
− ni = 1.67 x10 s
then g − R = − R ′ and R ′ = so that δn
τ pO + τ nO (c)
ni p-type, pO >> nO , pO >> n
g−R=+ . Thus a negative i

τ pO + τ nO Then
recombination rate implies a net positive R 1 1 +6 −1
= = −7
= 2 x10 s
generation rate. δn τ nO 5 x10

75
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

6.38
(iii) s = ∞ , δp = 10
LM1 − expFG − x IJ OP
N H L KQ
(a) From Equation [6.56], 14

d (δp ) δp
2
p
Dp + g′ − =0
(b) (i) s = 0 , δp(0) = 10 cm
−3
τ pO
2 14
dx
Solution is of the form (ii) s = 2000 cm / s , δp(0) = 0.833 x10 cm
14 −3

δp = g ′τ pO + A exp − x Lp + B exp + x Lp b g b g (iii) s = ∞ , δp(0) = 0

At x = ∞ , δp = g ′τ pO , so that B ≡ 0 ,
Then 6.39
δp = g ′τ pO + A exp − x L p b g Ln = Dnτ nO = b
(25) 5 x10 −7 = 35.4 x10 −4 cm g
We have
(a)
d (δp )
Dp
dx
x = 0 = s(δp ) x = 0 At x = 0 , g ′τ nO = 2 x10 b 21
gb5x10 g = 10 −7 15
cm
−3

Or δnO = g ′τ nO = 10 cm
15 −3
We can write
d (δp ) −A For x > 0
x =0 = and (δp) x=0 = g ′τ pO + A
d (δn ) δn d (δn ) δn
2 2
dx Lp
Dn − =0⇒ − =0
τ nO
2 2 2
Then dx dx Ln
− AD p
Lp
b
= s g ′τ pO + A g Solution is of the form
a
δn = A exp − x Ln + B exp + x Ln f a f
Solving for A we find At x = 0 , δn = δnO = A + B
− sg ′τ pO At x = W ,
A=
Dp
+s
δn = 0 = A exp −W Ln + B exp +W Ln a f a f
Solving these two equations, we find
Lp
−δnO exp +2W Ln a f
The excess concentration is then
L F −x I O
A=
1 − exp 2W Ln a f
δp = g ′τ M1 − ⋅ expG J P
s

N bD L g + s H L K Q
δnO
B=
a f
pO

1 − exp 2W Ln
p p p

where
Substituting into the general solution, we find
L = D τ = (10)b10 g = 10 cm
−7 −3
p p pO δnO
δn =
a
exp +W Ln − exp −W Ln f a f
Now
L F −xI O k
× exp +(W − x ) Ln − exp −(W − x ) Ln p
δp = b10 gb10 gM1 − expG J P
s −7
or
N b10 10 g + s H L K Q
21
−3
p δnO sinh (W − x ) Ln
δn =
or sinh W Ln
L s expFG − x IJ OP
δp = 10 M1 − where
N 10 + s H L K Q
14
4
−3
δnO = 10 cm and Ln = 35.4 µm
15
p

(i) s = 0 , δp = 10 cm
14 −3 (b)
If τ nO = ∞ , we have
(ii) s = 2000 cm / s ,
L F −xI O
δp = 10 M1 − 0.167 expG J P
d (δn )
2

=0
H L KQ
14

N
2
dx
p so the solution is of the form
δn = Cx + D

76
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

Applying the boundary conditions, we find 6.41

x F I For −W < x < 0 ,
δn = δnO 1 −
W H K Dn
d (δn )
2

2
+ GO′ = 0
dx
6.40 so that
For τ pO = ∞ , we have d (δn ) GO′
=− x + C1
dx Dp
d (δp ) d (δp )
2

2
= 0 so that = A and and
dx dx
GO′
δp = Ax + B δn = − x + C1 x + C2
2

At x = W 2 Dn
d (δp ) For 0 < x < W ,
− Dp x =W = s ⋅ (δp ) x =W d (δn )
2
d (δn )
dx = 0 , so= C3 , δn = C3 x + C4
or dx
2
dx
− D p A = s( AW + B ) The boundary conditions are:
which yields d (δn )
(1) s = 0 at x = −W , so that x =− W = 0
B=
−A
s
D p + sWb g dx
(2) s = ∞ at x = +W , so that δn(W ) = 0
At x = 0 , the flux of excess holes is (3) δn continuous at x = 0
d (δp ) d (δn )
10 = − D p x = 0 = − Dp A
19
(4) continuous at x = 0
dx dx
so that Applying the boundary conditions, we find
−10 GO′W GO′W
19 2
−4
A= = −10 cm
18
C1 = C3 = − , C2 = C4 = +
10 Dn Dn
and Then, for −W < x < 0
10
18
F 10 + W I G′
b g
B=
s Hs K
(10 + sW ) = 1018 δn = O − x − 2Wx + 2W
2 Dn
2 2

The solution is now

F 10I and for 0 < x < +W

H
δp = 10 W − x +
sK
G ′W
18

δn = O (W − x )
Dn
(a)
For s = ∞ ,
δp = 10 20 x10
18
b −4
g
− x cm
−3 6.42
Computer Plot
(b)
For s = 2 x10 cm / s
3

δp = 10
18
b70x10 − xg cm
−4 −3

77
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 6
Solutions Manual Problem Solutions

(page left blank)

78
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

Chapter 7
Problem Solutions
(c)
−3 −3
N d = 10 cm , N a = 10 cm
17 17
7.1
FG N N IJ Then
Vbi = Vt ln
H n K
a d
2 Si: Vbi = 0.814 V , Ge: Vbi = 0.432 V ,
i

−3 GaAs: Vbi = 1.28 V

where Vt = 0.0259 V and ni = 1.5 x10 cm
10

We find
(a) 7.3
Computer Plot
Vbi (V )
−3
For N d = 10 cm
15

(i ) N a = 10 cm
15 −3
0.575 V 7.4
Computer Plot
(ii ) N a = 10 cm
16 −3
0.635
(iii ) N a = 10 cm
17 −3
0.695 7.5
(a) n-side:
(iv ) N a = 10 cm
18 −3
0.754
FG N IJ
E F − E Fi = kT ln
Hn K
d

(b) i

For N d = 10 cm
18 −3
Vbi (V )
= ( 0.0259 ) ln
FG 5x10 IJ 15

(i ) N a = 10 cm
15 −3
0.754 V H 15. x10 K 10

(ii ) N a = 10 cm
16 −3
0.814 or
E F − E Fi = 0.3294 eV
(iii ) N a = 10 cm
17 −3
0.874
p-side:
(iv ) 0.933
FG N IJ
−3
N a = 10 cm
18

E Fi − E F = kT ln
Hn K
a

7.2 F 10 IJ
= ( 0.0259 ) lnG
17

Si: ni = 1.5 x10 cm

10 −3

−3
H 15. x10 K 10

Ge: ni = 2.4 x10 cm

13
or
GaAs: ni = 18
. x10 cm
6 −3 E Fi − E F = 0.4070 eV

FG N N IJ (b)
Vbi = Vt ln
H n K and Vt = 0.0259 V
a d
2
Vbi = 0.3294 + 0.4070
i
or
(a) Vbi = 0.7364 V
−3 −3
N d = 10 cm , N a = 10 cm
14 17

(c)
Then
Si: Vbi = 0.635 V , Ge: Vbi = 0.253 V ,
FG N N IJ
Vbi = Vt ln
H n K
a d
2

GaAs: Vbi = 110

. V i

(b) Lb10 gb5x10 g OP

= (0.0259 ) ln M
17 15

N d = 5 x10 cm , N a = 5 x10 cm
Then
16 −3 16 −3
MN b1.5x10 g PQ 10 2

or
Si: Vbi = 0.778 V , Ge: Vbi = 0.396 V , Vbi = 0.7363 V
GaAs: Vbi = 1.25 V

83
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

FG N N IJ
(d) Vbi = Vt ln
H n K
a d

LM 2 ∈V FG N IJ FG 1 IJ OP
2
1/ 2
i

xn =
N e H N KH N + N KQ
bi a
Lb2 x10 gb2 x10 g OP
= (0.0259 ) ln M
16 16

NM b15. x10 g PQ
d a d

=M
L 2(11.7)b8.85x10 g(0.736)
−14
10 2

N 1.6 x10
−19 or
Vbi = 0.7305 V

×G
F 10 IJ F 1 I OP
17 1/ 2
(d)
H 5x10 K H 10 + 5x10 K Q
15 17 15
L 2(11.7)b8.85x10 g(0.7305)
x =M
−14

or
x n = 0.426 µm
n
N 1.6 x10
−19

Now ×G
F 2 x10 IJ F 1 I OP 16 1/ 2

xp
L 2(11.7)b8.85x10 g(0.736)
=M
−14
H 2 x10 K H 2 x10 + 2 x10 K Q
16 16 16

N 1.6 x10
−19 or
x n = 0.154 µm

×G
F 5x10 IJ F 1 I OP
15 1/ 2
By symmetry
H 10 K H 10 + 5x10 K Q
17 17 15
x p = 0.154 µm
or Now
x p = 0.0213 µm eN d xn
Ε max =
We have ∈

Ε max =
eN d xn b1.6x10 gb2 x10 gb0.154 x10 g
−19 16 −4

(11.7)b8.85x10 g
∈ = −14

b1.6x10 gb5x10 gb0.426x10 g

−19 15 −4

or
(11.7)b8.85x10 g
= −14
Ε max = 4.76 x10 V / cm
4

or
Ε max = 3.29 x10 V / cm
4
7.7
LM −a E − E f OP
(b) nO = N C exp
N kT Q
C F

7.6
(a) n-side
F 2 x10 IJ ⇒ F −0.21 I
= 2.8 x10 exp
H 0.0259 K
19

= ( 0.0259 ) lnG
16

E F − E Fi
H 15. x10 K 10
or
E F − E Fi = 0.3653 eV nO = N d = 8.43 x10 cm
15 −3
(n-region)
p-side
F 2 x10 IJ ⇒ LM −a E − E f OP
pO = N V exp
N kT Q
F V

= ( 0.0259 ) lnG
16

E Fi − E F
H 15. x10 K 10
F −0.18 I
= 1.04 x10 exp
H 0.0259 K
19

E Fi − E F = 0.3653 eV
(b) or
Vbi = 0.3653 + 0.3653 ⇒ pO = N a = 9.97 x10 cm
15 −3
(p-region)
Vbi = 0.7306 V (c)
(c) FG N N IJ
Vbi = Vt ln
H n K
a d
2
i

84
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

L b9.97 x10 gb8.43x10 g OP

= ( 0.0259 ) ln M
15 15 (d)
x p = 0.25 x n ⇒ x p = 0.0916 µm
MN b15. x10 g PQ 10 2

(e)
or eN d x n eN a x p
Vbi = 0.690 V Ε max = =
∈ ∈

7.8
b1.6x10 gb1.04 x10 gb0.366 x10 g
−19 16 −4

. )b8.85 x10 g
=
(a) GaAs: Vbi = 1.20 V , ni = 18
. x10 cm
6 −3 (131 −14

x p = 0.2W = 0.2 xn + x p b g or
Ε max = 5.25 x10 V / cm
4

or
xp
= 0.25 7.9
xn
Also (a) Vbi = ( 0.0259 ) ln
LM b10 gb10 g OP
16 15

N d xn = N a x p ⇒
xp
=
Nd
= 0.25
MN b15. x10 g PQ 10 2

xn Na or
Now Vbi = 0.635 V
FG N N IJ (b)
H n K
Vbi = Vt ln
L 2 ∈V FG N IJ FG 1 IJ OP
a d
1/ 2
2

x =M
N e H N KH N + N KQ
i bi a
n
or
F 0.25N IJ
d a d

1.20 = (0.0259 ) lnG

2
L 2(11.7)b8.85x10 g(0.635)
=M
−14

H n K
a

N
2
−19
i 1.6 x10
Then
0.25 N F 1.20 I
2
F 10 IJ F 1 I OP
×G
16 1/ 2

n
= exp
i
2
H 0.0259 K
a
H 10 K H 10 + 10 K Q 15 16 15

or or x n = 0.864 µm

N = 2 n exp M
L 1.20 OP Now
a
N 2(0.0259) Q
i
L 2 ∈V FG N IJ FG 1 IJ OP
=M
1/ 2

N e H N KH N + N KQ
bi d
xp
or
a a d
N a = 4.14 x10 cm
16 −3

L 2(11.7)b8.85x10 g(0.635)
=M
−14

(b)
N d = 0.25 N a ⇒ N d = 1.04 x10 cm
16 −3 N 1.6 x10
−19

(c)
×G
F 10 IJ F 1 I OP 15 1/ 2

x =M
L 2 ∈V FG N IJ FG 1 IJ OP 1/ 2
H 10 K H 10 + 10 K Q 16 16 15

N e H N KH N + N KQ
bi a
n
or x p = 0.0864 µm
d a d

(c)
L 2(131. )b8.85x10 g(1.20)
=M
−14

Ε max =
eN d xn

N 1.6x10 −19 ∈
b1.6x10 gb10 gb0.864 x10 g
F 4I F IO
−19 15 −4
1/ 2
1
(11.7)b8.85x10 g
=
×
H 1 K H 4.14 x10 + 1.04 x10 K PQ 16 16
−14

or or
Ε max = 1.34 x10 V / cm
4
x n = 0.366 µm

85
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

(b)
7.10 For a 1% change in Vbi , assume that the change
FG N N IJ and 2
is due to ni , where the major dependence on
H n K
Vbi = Vt ln a d
2
temperature is given by
FG IJ
i

n = N N expG
F − E IJ −Eg
H kT K ni ∝ exp
H K
2 g 2

i C V
kT
We can write Now
FTI 3
LM N N OP
H 300 K V aT f N n aT f Q
a d
N N =N N ln 2
C V CO VO

V aT f L N N OP
bi 2
= i 2

Now
ln M
V = V lna N N f − lnb n g N n aT f Q
bi 1 a d
2 2
bi t a d i

= V lna N N f − lna N N f lna N N f − ln n aT f

i 1
2

F T I + E OP
t a d CO VO

lna N N f − ln n aT f
a d i 2
3 = 2

H 300 K kT Q
g
− ln a d i 1

lna N N f − lna N N f − G
F − E IJ
H kT K
g
or a d C V

L F N N IJ − 3 lnF T I + E OP
V = V MlnG
=
F − E IJ
2

N H N N K H 300K kT Q lna N N f − lna N N f − G

a d g

H kT K
bi t g
a d C V
CO VO
1

= lln b5x10 gb10 g

or
FTI 17 17

0.40 = ( 0.0250)
H 300 K − ln b2.8 x10 gb1.04 x10 g +
E U
V
L L b5x10 gb10 g OP − 3 lnF T I
19 19 g

kT W
15 16

× Mln M
N Nb2.8x10 gb1.04 x10 g Q H 300 K
2

/lln b5x10 gb10 g

19 19 17 17

112
. OP − ln b 2.8 x10 gb1.04 x10 g +
E U
V
(0.0259)aT 300f Q
+ 19 19 g

kT W 1

Then or
F T I LM−15.58 − 3 lnF T I + 43.24 OP Eg
15.44 =
H 300 K N H 300 K aT 300f Q a f=
Vbi T2
79.897 − 88.567 +
kT
V aT f
2

By trial and error E

79.897 − 88.567 +
bi 1 g
T = 490 K
kT1
We can write
7.11
F N N IJ
= V lnG
−8.67 +
Eg
−8.67 +
Eg

H n K
a d
(a) Vbi t kT2 kT2
2
0.990 = =
i
112
.
Lb5x10 gb10 g OP
= (0.0259 ) ln M
17 17 −8.67 +
0.0259
34.57

MN b1.5x10 g PQ 10 2 so that
Eg 112
.
or
kT2
= 42.90 =
FTI
Vbi = 0.8556 V (0.0259)
H 300 K
2

We then find
T2 = 302.4 K

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

7.12 (d)
(b) For N d = 10 cm ,
16 −3
eN d xn
Ε max =
FG N IJ ∈
E F − E Fi = kT ln
Hn K
d

b1.6x10 gb10 gb2.43x10 g

−19 16 −7

(11.7)b8.85x10 g
i =
F 10 IJ
= ( 0.0259 ) lnG
16
−14

H 15. x10 K 10 or
Ε max = 3.75 x10 V / cm
2

or
E F − E Fi = 0.3473 eV
−3
7.14
For N d = 10 cm ,
15
Assume Silicon, so

E F − E Fi = (0.0259) ln
FG 10 IJ 15

L =G
F ∈ kT IJ 1/ 2

H 1.5x10 K 10 D
He N K 2
d
or
E F − E Fi = 0.2877 eV
=M
L(11.7)b8.85x10 g(0.0259)b1.6x10 −14 −19
g OP 1/ 2

Then
Vbi = 0.3473 − 0.2877
MN b1.6x10 g N −19 2

d PQ
or
or
Vbi = 0.0596 V L =G
F 1.676x10 IJ 5 1/ 2

H N K
D
d

7.13

= V lnG
F N N IJ (a) N d = 8 x10 cm , LD = 0.1447 µm
14 −3

H n K
a d
(a) Vbi −3
(b) N d = 2.2 x10 cm , LD = 0.02760 µm
t 2 16
i

L b10 gb10 g OP
= ( 0.0259 ) ln M
16 12
(c) N d = 8 x10 cm , LD = 0.004577 µm
17 −3

MN b1.5x10 g PQ 10 2 Now
(a) Vbi = 0.7427 V
or
(b) Vbi = 0.8286 V
Vbi = 0.456 V
(c) Vbi = 0.9216 V
(b)

xn =
LM 2(11.7)b8.85x10 g(0.456) −14 Also
LM 2(11.7)b8.85x10 gaV f −14

N 1.6 x10
−19
xn =
N 1.6x10 −19
bi

×G
F 10 IJ F 1 12
I OP 1/ 2

F 8x10 IJ FG 1 IJ OP
H 10 K H 10 + 10 KQ
1/ 2

×G
17

H N K H 8x10 + N K Q
16 16 12
17

or d d

−7 Then
x n = 2.43 x10 cm
(c) (a) x n = 1.096 µm

xp =
LM 2(11.7)b8.85x10 −14
g(0.456) (b) x n = 0.2178 µm
N 1.6 x10
−19
(c) x n = 0.02731 µm

×G
F 10 16
IJ F 1 I OP 1/ 2
Now
H 10 12
K H 10 16
+ 10
12
KQ (a)
LD
= 0.1320
or xn
−3
x p = 2.43x10 cm

87
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

LD Vbi = 0.856 V
(b) = 0.1267
xn (b)

LD L 2 ∈aV + V f FG N IJ FG 1 IJ OP
x =M
1/ 2

N e H N KH N + N KQ
bi R a
(c) = 0.1677 n
xn d a d

L 2(11.7)b8.85x10 g(5.856)
=M
−14

7.15
Computer Plot N 1.6x10 −19

F 5x10 IJ F 1 I OP
×G
17 1/ 2

7.16
FG N N IJ H 1x10 K H 5x10 + 1x10 K Q 17 17 17

or
(a) Vbi = Vt ln
H n K
a d
2
i x n = 0.251 µm
Lb2 x10 gb2 x10 g OP
= (0.0259 ) ln M
16 15 Also

NM b15. x10 g QP 10 2 L 2 ∈aV + V f FG N IJ FG 1 IJ OP

=M
1/ 2

N e H N KH N + N KQ
bi R d
xp
or a a d

Vbi = 0.671 V L 2(11.7)b8.85x10 g(5.856)

=M
−14

(b)
N 1.6x10 −19

LM 2 ∈aV + V f FG N + N IJ OP 1/ 2

F 1x10 IJ F 1 I OP 1/ 2

N e H N N KQ ×G
17
W= bi R a d

a d
H 5x10 K H 5x10 + 1x10 K Q17 17 17

=S
R 2(11.7)b8.85x10 gaV + V f −14
bi R or
T 1.6 x10
−19
x p = 0.0503 µm

×M
L 2 x10 + 2 x10 OPUV 16 15
1/ 2 Also
W = xn + x p
N b2 x10 gb2 x10 g QW 16 15
or
or W = 0.301 µm
W = 7.12 x10
−9
aV + V f 1/ 2
(c)

For VR = 0 , W = 0.691x10 cm
bi R

−4
Ε max =
a
2 Vbi + VR f= 2(5.856)
−4

−4
W 0.301x10
For VR = 8 V , W = 2.48 x10 cm or
Ε max = 3.89 x10 V / cm
5
(c)

Ε max =
a
2 Vbi + VR f (d)
W
CT =
∈A
=
b
(11.7) 8.85x10 −14 10 −4 gb g
For VR = 0 , Ε max = 1.94 x10 V / cm
4
−4
W 0.301x10
For VR = 8 V , Ε max = 7.0 x10 V / cm
4 or
CT = 3.44 pF

7.17
FG N N IJ 7.18
FG N N IJ
(a) Vbi = Vt ln
H n K
a d

(a) Vbi = Vt ln
H n K
2 a d
i

Lb5x10 gb10 g OP
2
i

= (0.0259 ) ln M L 50 N OP
17 17

= (0.0259 ) ln M
2

MN b1.5x10 g PQ 10 2

MN b1.5x10 g PQ
a

10 2

or

88
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
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We can write (b)

F 0.752 I = 50 N 2
FG 2 N N IJ
H 0.0259 K b1.5x10 g V a2 N f H n K
a d
exp a
2
kT ln 2
10

V aN f F N N IJ
bi
= a i

kT lnG
or
LM 0.752 OP H n K
bi a a d
10 2
1.5 x10
F N N IJ
i
Na =
50
exp
N 2(0.0259) Q kT ln 2 + kT lnG
H n K
a d

and 2

=
F N N IJ
i
−3
N a = 4.28 x10 cm
15

kT lnG
H n K
a d

Then 2
i
−3
N d = 2.14 x10 cm
17
So we can write this as
(b) V a 2 N f kT ln 2 + V a N f
V aN f V aN f
=
LM 2 ∈aV + V f ⋅ FG 1 IJ OP
bi a bi a
1/ 2

N e H N KQ
bi a bi a
xp ≈ W ≈ bi R

so
∆Vbi = kT ln 2 = ( 0.0259 ) ln 2
a

L 2(11.7)b8.85x10 g(10.752) OP
=M
−14 1/ 2

or
N b1.6x10 gb4.28x10 g Q −19 15
∆Vbi = 17.95 mV
or
x p = 1.80 µm 17.20
(a)
(c)
L e ∈ N OP 1/ 2 LM 2 ∈aV + V f FG N + N IJ OP 1/ 2

W ( A) N H N N KQ
biA R a dA

C′ ≈ M
N 2aV + V f Q
a
e
= a dA

W ( B ) L 2 ∈ aV + V f F N + N I O
bi R 1/ 2

Lb1.6x10 g(11.7)b8.85x10 gb4.28x10 g OP

=M
−19 −14 15 1/ 2
MN e GH N N JK PQ
biB R a dB

N 2(10.752 ) Q or
a dB

W ( A) L aV + V f a N + N f F N I O
or 1/ 2

=M ⋅G JP
W ( B ) N aV + V f a N + N f H N K Q
C ′ = 5.74 x10
−9
F / cm
2 biA
⋅ R a dA dB

biB R a dB dA

We find
7.19
(a) Neglecting change in Vbi
Lb10 gb10 g OP = 0.7543 V
V = ( 0.0259 ) ln M
18 15

R| LM 2 OP U| 1/ 2
biA
MN b15. x10 g PQ 10 2

C ′a2 N f | N a2 N + N f Q |
=S V| V = (0.0259 ) ln M
L b10 gb10 g OP = 0.8139 V
18 16

C ′a N f | F I
a a d

|T GH N + N JK |W
1 biB

NM b1.5x10 g QP 10 2

a d So we find
W ( A) LF 5.7543 I F 10 + 10 I F 10 I O
+
For a n p ⇒ N d >> N a 1/ 2

G JG J
18 15 16

W ( B ) MNH 5.8139 K H 10 + 10 K H 10 K PQ
Then =
a f
18 16 15

C′ 2 Na
C′ Naa f = 2 = 1.414 or
W ( A)
= 313
.
so a 41.4% change.
W ( B)

89
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

(b)
a f 2 VbiA + VR
9 x10 = 1.22 x10 Vbi + VR ⇒
10 9
a f
Vbi + VR = 73.77 V
Ε ( A) W ( A) W ( B ) aV f
+ VR and
Ε ( B ) 2aV + V f W ( A) aV +V f
= = ⋅ biA

biB R biB R
VR = 73 V
W ( B) (b)
F 1 I F 5.7543I LM b4 x10 gb4 x10 g OP ⇒ 16 17

=
H 313. K H 5.8139 K Vbi = (0.0259 ) ln
MN b15. x10 g PQ 10 2

or
Ε ( A) V = 0.826 V

b3x10 g = LMN (112.7b)1b.68.x8510x10g g OPQaV + V f

bi
= 0.316 −19
Ε( B) 5 2

−14 bi R
(c)
L ∈N N O 1/ 2
L b4 x10 gb4 x10 g OP 16 17

C ′ ( A) MN 2aV + V fa N + N f PQ
×M
a dA

C ′( B) L
= biA R a dA
N 4 x10 + 4 x10 Q 16 17

MN 2aV +∈VNfaNN + N f OPQ

1/ 2
j a dB
which yields
Vbi + VR = 8.007 V
biB R a dB
and
LF N IJ FG V + V IJ FG N + N IJ OP
= MG
1/ 2
VR = 7.18 V
NH N K H V + V K H N + N K Q
dA biB R a dB

(c)
LM b4 x10 gb4 x10 g OP ⇒
dB biA R a dA

LF 10 IJ F 5.8139 I FG 10 + 10 IJ OP
= MG
15 18 16 1/ 2 17 17

NH 10 K H 5.7543K H 10 + 10 K Q
16 18 15
Vbi = (0.0259 ) ln
MN b15. x10 g PQ 10 2

or V = 0.886 V
C ′j ( A)
b3x10 g = LM (112.7b)1b.68.x8510x10g g OPaV + V f
bi
−19
= 0.319 2
C ′j ( B )
5

N Q −14 bi R

17.21
×M
L b4 x10 gb4 x10 g OP 17 17

(a) Vbi
L b4 x10 gb4 x10 g OP ⇒
= (0.0259 ) ln M
15 17
N 4 x10 + 4 x10 Q 17 17

MN b1.5x10 g PQ 10 2 which yields

Vbi + VR = 1.456 V
Vbi = 0.766 V and
Now VR = 0.570 V

=M
L 2eaV + V f FG N N IJ OP 1/ 2

Ε
N ∈ H N + N KQ
bi R a d
max
17.22
a d
(a) We have
so
LM ∈ N N OP
b3x10 g = LMN (112.7b)1b.68.x8510x10g g OPQaV + V f
1/ 2
−19

N 2V a N + N f Q
2 a d
5
−14 bi R C ( 0) j
= bi a d

C (10) L
L b4 x10 gb4 x10 g OP MN 2aV +∈V Nfa NN + N f OPQ
1/ 2
15 17 j

×M
a d

N 4 x10 + 4 x10 Q 15 17

or
bi R a d

or
C ( 0)
. =G
F V + V IJ 1/ 2

H V K
j
= 313 bi R

C (10)
j bi

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

For VR = 10 V , we find
7.24
(313
. ) Vbi = Vbi + 10
L e ∈ N N OP
2
1/ 2

or C′ = M
N 2aV + V fa N + N f Q
a d

Vbi = 114
. V bi R a d

(b) and
x p = 0.2W = 0.2 x p + xn b g L b10 gb10 g OP
V = ( 0.0259 ) ln M
18 15

Then
xp Nd
bi
MN b15. x10 g PQ 10 2

= 0.25 = or
xn Na Vbi = 0.754 V
Now For N a >> N d , we have
FG N N IJ ⇒ L b1.6x10 −19
g(11.7)b8.85x10 gb10 g OP −14 15 1/ 2

H n K
Vbi = Vt ln
C′ = M
a d

N 2aV + V f Q
2
i
bi R
so
L 0.25N OP
. = (0.0259 ) ln M
2
a
or
L8.28x10 −17
OP 1/ 2

C′ = M
114
MN b1.8x10 g PQ 6 2

N V +V bi R Q
We can then write
L 114. OP For VR = 1 V , C ′ = 6.87 x10
−9 2
6 F / cm
1.8 x10
N = exp M
N 2(0.0259) Q For VR = 10 V , C ′ = 2.77 x10
−9 2
a F / cm
0.25
−4
If A = 6 x10 cm , then
2
or
N a = 1.3x10 cm
16 −3 For VR = 1 V , C = 4.12 pF
and For VR = 10 V , C = 1.66 pF
N d = 3.25 x10 cm
15 −3 The resonant frequency is given by
1
fO =
7.23 2π LC

Vbi
L b10 gb5x10 g OP
= (0.0259 ) ln M
16 16
so that
For VR = 1 V , f O = 1.67 MHz
MN b18. x10 g PQ 6 2
For VR = 10 V , f O = 2.63 MHz
or
Vbi = 1.20 V 7.25
Now eN d xn
LM 1 OP 1/ 2 Ε max =
∈
C ′ aV f NV + V Q = LMV + V OP 1/ 2
+
For a p n junction,
C ′ aV f L
j R1
= bi R1 bi R2

MNV +1V
R2 OP NV + V Q
1/ 2
bi R1
x ≈M
L 2 ∈aV + V f OP 1/ 2

Q
bi R

So
bi R2
n
N eN Q d

so that
(3)2 =
1.20 + VR 2
⇒ LM 2eN aV + V fOP 1/ 2

Ε =
N∈ Q
d
1.20 + 1 max bi R

VR 2 = 18.6 V
Assuming that Vbi << VR , then

91
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

∈ Ε max
2
b
(11.7) 8.85x10 −14 106 gb g 2 or
Vbi = 0.557 V
2b1.6 x10 g(10)
Nd = = −19
2 eVR
(b)
or
L 2 ∈V FG N IJ FG 1 IJ OP
=M
1/ 2

N e H N KH N + N KQ
−3
N d = 3.24 x10 cm
17 bi d
xp
a a d

7.26 L 2(11.7)b8.85x10 g(0.557)

=M
−14

x n = 0.1W = 0.1 xn + x p b g N 1.6 x10

−19

which yields
×G
F 10 IJ F 1 I OP 14 1/ 2

xp
xn
N
= d =9
Na
H 5x10 K H 10 + 5x10 K Q 15 14 15

or
We can write
FG N N IJ
−6
x p = 5.32 x10 cm
Vbi = Vt ln
H n K
a d
2 Also

L 9 N OP
i
L 2 ∈V FG N IJ FG 1 IJ OP
x =M
1/ 2

N e H N KH N + N KQ
bi a

= (0.0259 ) ln M
2
n
a

NM b1.5x10 g QP
d a d

L 2(11.7)b8.85x10 g(0.557)
10 2
−14

=M
We also have
CT 3.5 x10
−12 N 1.6 x10
−19

C ′j =
A
=
5.5 x10
−4
= 6.36 x10
−9
F / cm
2

×G
F 5x10 IJ F 1 I OP 15 1/ 2

so H 10 K H 10 + 5x10 K Q 14 14 15

LM e ∈ N N OP 1/ 2
or

N 2aV + V fa N + N f Q
−9
6.36 x10 = a d
−4
x n = 2.66 x10 cm
bi R a d

Which becomes (c)

4.05 x10
−17 For x n = 30 µm , we have
b1.6x10 g(11.7)b8.85x10 g N a9 N f
−19 −14

30 x10 = M
L 2(11.7)b8.85x10 gaV + V f −14

2aV + V fa N + 9 N f
a a −4 bi R
=
bi R a a N 1.6 x10
−19

or
×G
F 5x10 IJ F 1 I OP 15 1/ 2

H 10 K H 10 + 5x10 K Q
−32
7.46 x10 Na
aV + V f
−17
4.05 x10 = 14 14 15

bi R
which becomes
If VR = 1.2 V , then by iteration we find 9 x10 = 1.27 x10 aV + V f
−6 −7
bi R
−3
N a = 9.92 x10 cm
14
We find
Vbi = 0.632 V VR = 70.3 V
−3
N d = 8.93 x10 cm
15

7.28
+ −3
An n p junction with N a = 10 cm ,
14

7.27
FG N N IJ (a)
A one-sided junction and assume VR >> Vbi , then
(a) Vbi = Vt ln
H n K
a d

LM 2 ∈V OP
2
1/ 2
i

Lb5x10 gb10 g OP
= (0.0259 ) ln M
15 14 xp =
N eN Q
R

MN b1.5x10 g PQ
a
2
10
so

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

b50x10 g = 2(11b1..67)xb108.85gbx1010 ggV

−14 +
2 For the p n junction

F 1 I ≈ 1 LM 2aV + V f OP
−4 R
−19 14 2

which yields H CK A N e ∈ N Q 2
bi

d
R

VR = 193 V so that
(b) ∆a1 C f
2
1 2
xp FG N IJ
Nd ∆VR
= ⋅
A
2
e ∈ Nd
=
HN K ⇒ xn = x p a

x N
n a d We have
so
F 10 IJ ⇒ F 1 I = 7.69 x10 2

For VR = 0 ,
H CK
23

x = b50 x10 gG
14

H 10 K
−4

F 1 I = 6.61x10
n 16
2

= 6V ,
H CK
24
or For VR
x n = 0.5 µm
Then, for ∆VR = 6 V ,
(c)

Ε max =
a
2 Vbi + VR f= 2(193) ∆1C a f = 5.84 x10
2 24

−4 We find
W 50.5 x10
or 2 1
Ε max = 7.72 x10 V / cm
4
Nd =
A e∈
2
⋅
FG ∆a1 Cf IJ 2

H ∆V K R

7.29 2

(a) Vbi
Lb10 gb5x10 g OP
= (0.0259 ) ln M
18 15 =
b5x10 g b1.6x10 g(11.7)b8.85x10 g
−5 2 −19 −14

MN b1.5x10 g PQ 10 2
1
or
×
FG 5.84 x10 IJ 24

Vbi = 0.796 V H 6 K
C = AC ′ = A M
L e ∈ N N OP 1/ 2
so that
N 2aV + V fa N + N f Q
a d
−3
N d = 4.96 x10 ≈ 5 x10 cm
15 15

bi R a d

L b1.6x10 g(11.7)b8.85x10 g
= b5 x10 gM
−19 −14 Now, for a straight line
y = mx + b
2aV + V f
−5

N bi R
∆1C a f 2
5.84 x10
24

b10 gb5x10 g OP 18 15
1/ 2 m=
∆VR
=
6
×
b10 + 5x10 g Q 18 15

F 1 I = 7.69 x10 = b 2

At VR = 0 ,
H CK
23

or

C = b5 x10 gM
L 4.121x10 OP −16 1/ 2
Then
N aV + V f Q F 1 I = FG 5.84 x10 IJ ⋅V + 7.69 x10
−5
2 24

H CK H 6 K
23
bi R
R
For VR = 0 , C = 114
. pF
For VR = 3 V , C = 0.521 pF F 1I = 0, 2

For VR = 6 V , C = 0.389 pF
Now, at
H CK
We can write
0=G
F 5.84 x10 IJ ⋅V + 7.69 x10 24

LM 2aV + V fa N + N f OP H 6 K
23

F 1I 2
1
R

H CK =
A
2
bi

N e ∈N N Q
R

a
a

d
d

which yields
VR = −Vbi = −0.790 V

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

or
Vbi ≈ 0.796 V
L b2.04 x10 g N OP
0.95 = (0.0259 ) ln M
17
H

(b) MN b15. x10 g PQ 10 2

Vbi = (0.0259 ) ln
LM b10 gb6x10 g OP
18 16 which yields

MN b1.5x10 g PQ
−3
N H = 9.38 x10 cm
18
10 2

or
7.31
Vbi = 0.860 V Computer Plot

b gLMN b1.6x10 2ga(V11.7+)Vb8f.85x10 g

−19 −14
−5
C = 5 x10 7.32
bi R
FG N N IJ
b10 gb6x10 g OP 18 16 1/ 2
(a) Vbi = Vt ln
H n K
aO
2
dO

×
b10 + 6x10 g Q
i
18 16
(c) p-region
or dΕ ρ ( x ) − eN aO
= =
L 4.689 x10 OP
C = b5 x10 gM
−5
−15 1/ 2
dx ∈ ∈

N V +V Q bi R
or

Ε=
− eN aO x
+ C1
Then
For VR = 0 , C = 3.69 pF ∈
We have
For VR = 3 V , C = 1.74 pF − eN aO x p
Ε = 0 at x = − x p ⇒ C1 =
For VR = 6 V , C = 1.31 pF ∈
Then for − x p < x < 0
7.30

C′ =
C
=
1.3 x10
−12

= 1.3 x10
−7
F / cm
2
Ε=
− eN aO
∈
bx + x g p

−5
A 10
n-region, 0 < x < xO
(a) For a one-sided junction
L e ∈ N OP
C′ = M
1/ 2 dΕ 1
=
ρ( x )
=
eN dO

N 2aV + V f Q
L
dx ∈ 2∈
bi R or
where N L is the doping concentration in the eN dO x
low-doped region. Ε1 = + C2
2∈
We have Vbi + VR = 0.95 + 0.05 = 1.00 V
n-region, x O < x < xn
Then
dΕ 2 ρ( x )
b1.3x10 g −7 2

dx
=
∈
=
eN dO
∈

=
b1.6x10 g(11.7)b8.85x10 g N
−19 −14
L
or
eN dO x
2(1) Ε2 = + C3
which yields ∈
−3 We have Ε 2 = 0 at x = xn , then
N L = 2.04 x10 cm
17

− eN dO xn
(b) C3 =
FG N N IJ ∈
Vbi = Vt ln
H n K
L H
2 so that for x O < x < xn
i

where N H is the doping concentration in the

high-doped region.
Ε2 =
− eN dO
∈
ax − xf
n

So We also have

94
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

Ε 2 = Ε 1 at x = x O
Then
φ =
eN d
2∈
ax + x f O
2

eN dO xO
+ C2 =
− eN dO
xn − x O a f At x = −1 µm
2∈ ∈
φ1
b1.6x10 gb5x10 g (−1 + 2)x10
−19 15
−4

2(11.7 )b8.85x10 g
or =
F I
−14

− eN dO x
C2 =
∈
xn − O
2 H K or
φ 1 = 3.86 V
Then, for 0 < x < xO ,
Potential difference across the intrinsic region
eN dO x eN dO Fx − x I φ i = Ε (0) ⋅ d = 7.73x10 b gb2 x10 g
H 2K
4 −4
Ε1 = − n
O

2∈ ∈ or
φ i = 15.5 V
7.33 By symmetry, potential difference across the p-
d φ ( x) − ρ( x) − dΕ ( x )
2
region space charge region is also 3.86 V . The
(a) = =
dx
2
∈ dx total reverse-bias voltage is then
For −2 < x < −1 µm , ρ( x ) = + eN d VR = 2(3.86) + 15.5 ⇒ VR = 23.2 V
So
dΕ eN d eN d x 7.34
= ⇒Ε= + C1 (a) For the linearly graded junction,
dx ∈ ∈
ρ( x ) = eax ,
At x = −2 µm ≡ − xO , Ε = 0
Then
So
dΕ ρ( x ) eax
− eN d xO eN d xO = =
0= + C1 ⇒ C1 = dx ∈ ∈
∈ ∈ Now
Then

z
2
eax
ea x
Ε=
eN d
∈
x + xO a f Ε=
∈
dx = ⋅
∈ 2
+ C1

At x = 0 , Ε (0) = Ε x = −1 µm , so a f At x = + xO and x = − xO , Ε = 0
So
Ε ( 0) =
eN d
( −1 + 2) x10 −4 FG x IJ + C ⇒ C = −ea FG x IJ
ea
2 2

∈H 2K ∈ H 2K
∈ 0= O O

b1.6x10 gb5x10 g b1x10 g

1 1
−19 15
−4
Then
(11.7)b8.85x10 g
= −14

which yields
Ε=
2∈
ea
bx − x g 2 2
O

Ε (0) = 7.73 x10 V / cm

4
(b)
(c)
φ ( x ) = − z Εdx =
LM − x ⋅ xOP + C
− ea x
3
2

2∈N 3 Q
Magnitude of potential difference is O 2

φ = Εdx = z
eN d
∈
x + xO dx za f Set φ = 0 at x = − x , then O

− ea L − x O
eN d FG x + x ⋅ xIJ + C
2
0=
2∈N 3M
3

+x P+C ⇒C =
O
eax
3 O
3

=
∈ H 2 K O 2
Q O
3∈
2 2

Then
− ea F x I eax
Let φ = 0 at x = − xO , then
FG x − x IJ + C ⇒ C = eN x G − x ⋅ xJ +
3 3

φ( x) =
2∈H 3 K 3∈
2 2 2 O
eN d
∈ H 2 K
O
0= O 2 d O
O 2 2
2∈
Then we can write

95
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 7
Solutions Manual Problem Solutions

7.35
We have that

C′ = M
L ea ∈ OP 2 1/ 3

N12aV + V f Q
bi R

then
b7.2 x10 g
−9 3

L ab1.6x10 g (11.7)b8.85x10
=M
−19 −14
g OP
2

MN 12(0.7 + 3.5) PQ
which yields
−4
a = 11
20
. x10 cm

96
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

Chapter 8
Problem Solutions 8.4
The cross-sectional area is
−3
8.1 I 10 x10 −4
A= = = 5 x10 cm
2
In the forward bias
F I eV
J
We have
20

H K
I f ≈ I S exp
kT FG V IJ ⇒ 20 = J expF 0.65 I
Then J ≈ J S exp
HV K
D

H 0.0259 K S

F eV I t

I I
exp
H kT K = expL e aV − V fO
1
so that

F eV I MN kT PQ
f1 −10
= ⋅ J S = 2.52 x10
S 2
1 2
A / cm
I I
f2
exp
H kT KS 2
We can write
LM 1 ⋅ Dn 1 Dp OP \
or J S = eni
2
+ ⋅
F kT I lnFG I IJ NN a
τ nO Nd τ pO Q
H e K HI K
f1
V −V =
1 2 We want
f2

(a) 1 Dn
⋅
If1 Na τ nO
For = 10 ⇒ V1 − V2 = 59.9 mV ≈ 60 mV = 0.10
If2 1 Dn 1 Dp
⋅ + ⋅
(b) Na τ nO Nd τ pO
If1 or
For = 100 ⇒ V1 − V2 = 119.3 mV ≈ 120mV
If2 1 25
⋅ −7
Na 5 x10
8.2 1 25 1 10
LM F eV I − 1OP ⋅ + ⋅
N H kT K Q
−7 −7
I = I exp S
Na 5 x10 Nd 5 x10
3
or we can write this as 7.07 x10
= = 0.10
I F eV I 7.07 x10 +
Na
b4.47 x10 g
H kT K
3 3
+ 1 = exp
I Nd
S

so that which yields

F kT I lnFG I + 1IJ Na
= 14.24
V =
H e K HI K S
Now
Nd

In reverse bias, I is negative, so at

I
= −0.90 , we have
J S = 2.52 x10
−10
b
= 1.6 x10
−19
gb1.5x10 g 10 2

IS LM 1
× ⋅
25
+
1
⋅
10 OP
or
V = (0.0259 ) ln(1 − 0.90) ⇒ N
We find
(14.24) N d
5 x10
−7
Nd 5 x10
−7
Q
V = −59.6 mV −3
N d = 7.1x10 cm
14

and
8.3 −3
N a = 1.01x10 cm
16
Computer Plot

101
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

8.5
(a) Jn bσ σ g n p

Jn
eDn n pO
Ln
Jn + J p
=
bσ σ g + 4.90
n p

=
Jn + J p eDn n pO eD p pnO
+ 8.6
Ln Lp For a silicon p n junction,
+

2
Dn ni 1 Dp
⋅ I S = Aeni ⋅
2

τ nO Na Nd τ pO
=
Dn
2
ni Dp ni
2

τ nO
⋅
Na
+
τ pO
⋅
Nd b gb1.6x10 gb15. x10 g ⋅ 101
= 10
−4 −19 10 2

16
10
12
−7

1 or
=
D pτ nO FG N IJ I S = 3.94 x10
−15
A
1+ ⋅
HN K
a

Dnτ pO Then
d

FG V IJ = b3.94 x10 g expF 0.50 I

We have
HV K H 0.0259 K
−15
I D = I S exp D

Dp µp 1 τ nO 1 t
= = and =
Dn µ n 2.4 τ pO 0.1 or
−7
so I D = 9.54 x10 A
Jn 1
Jn + J p
=
1 FG N IJ
1 8.7

0.1 H N K
1+ ⋅ a
We want
2.4 d Jn
or = 0.95
Jn + J p
Jn 1
Jn + J p
=
1 + (2.04)
FG N IJ eDn n pO Dn

HN K
a
Ln Ln N a
d = =
eDn n pO eD p pnO Dn Dp
(b) + +
Using Einstein’s relation, we can write Ln Lp Ln N a Lp N d
eµ n
2
ni Dn
⋅
Jn Ln Na Ln
= =
Jn + J p eµ n ni
2
eµ p 2
ni Dn D p N a
⋅ + ⋅ + ⋅
Ln Na Lp Nd Ln Lp N d
eµ n N d We obtain
=
eµ n N d +
Ln
Lp
⋅ eµ p N a Ln = Dnτ nO = b
(25) 0.1x10 −6 ⇒ g
Ln = 15.8 µm
We have
σ n = eµ n N d and σ p = eµ p N a Lp = D pτ pO = b
(10) 0.1x10 −6 ⇒ g
Also L p = 10 µm
Ln Dnτ nO 2.4 Then
= = = 4.90
Lp Dpτ pO 0.1
Then

102
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

25 FG V IJ
I = I S exp
HV K
D

15.8
0.95 =
25 10 N a FG IJ F 0.5 I
t

H K = b4.48 x10 g exp

+ ⋅
H 0.0259 K
−15
15.8 10 N d
which yields or
Na I = 1.08 µA
= 0.083
Nd (c)
The hole current is proportional to
8.8 1 Dp
FG N IJ I P ∝ eni ⋅ A ⋅
2

Nd τ pO
(a) p-side: E Fi − E F = kT ln
Hn K
a

F 5x10 IJ ⇒
i

b
= 1.6 x10
−19
gb1.5x10 g b10 gFH 101 IK 10 2 −4 10.9

= (0.0259 ) lnG
15
17 −7
10
H 15. x10 K 10
or
−16
E Fi − E F = 0.329 eV I P ∝ 3.76 x10 A
Also Then
−16
IP 3.76 x10 IP

− E = kT lnG
F N IJ I
=
4.48 x10
−15
⇒
I
= 0.0839

Hn K
d
n-side: E F Fi
i

F 10 IJ ⇒
= (0.0259 ) lnG
17 8.9
LM FG V IJ − 1OP
H 15. x10 K 10
I = I S exp
N HV K Q
a

E F − E Fi = 0.407 eV t

+
For a p n diode,
(b)
We can find FG eD p IJ = AF e D ⋅ n I 2

H L K GH τ N JK
p nO p
Dn = (1250)(0.0259 ) = 32.4 cm / s
2 IS = A i

p pO d

Dp = (420)(0.0259) = 10.9 cm / s
L 10 b2.4 x10 g O
2
2

= b10 gMb1.6 x10 g PP

13

Now −4
⋅
−19

JS = en M
2
L 1 D + 1 D OP n p
MN 10 10
Q −6 16

NN τ N τ Q
a nO d pO
or
I S = 2.91x10
−9
A
= b1.6 x10 gb15. x10 g
−19 10 2

(a)
L 1 32.4 + 1
×M
10.9 OP For Va = +0.2 V ,

or
N 5x10 10 10 15 −6 17
10
−7
Q b
I = 2.91x10
−9
gLNMexpFH 0.0259
0.2 I O
K − 1QP
−11 or
J S = 4.48 x10
2
A / cm
I = 6.55 µA
Then
I S = AJ S = 10b gb4.48x10 g
−4 −11 (b)
For Va = −0.2 V ,

gLMNexpFH 0.−0259
0.2 I O
or
I S = 4.48 x10
−15
A b
I = 2.91x10
−9

K − 1PQ
We find −9
≈ −2.91x10 A
or I = − I S = −2.91 nA

103
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

and
8.10
+
For an n p silicon diode
Ln = Dnτ nO = b
(35) 0.4 x10 −6 ⇒ g
Ln = 37.4 µm
1 Dn
I S = Aeni ⋅
2
Also
Na τ nO
ni
2
b1.5x10 g 10 2

b10 gb1.6x10 gb15. x10 g

−3
n pO = = = 4.5 x10 cm
4
−4 −19 10 2
15
25 Na 5 x10
= −6
10
16
10 Then
or eDn n pO b1.6x10 g(35)b4.5x10 g −19 4

(a)
I S = 1.8 x10
−15
A J nO =
Ln
=
b37.4 x10 g −4

or
For Va = 0.5 V −11
J nO = 6.74 x10
2
A / cm
FG V IJ = b18. x10 g expF 0.5 I
H 0.0259 K
−4
For A = 10 cm , then
2

HV K
−15
I D = I S exp a

−15
t
I nO = 6.74 x10 A
or
(c)
FG N N IJ
−7
I D = 4.36 x10 A
Vbi = Vt ln
H n K
a d
(b) 2
For Va = −0.5 V i

I D = − I S = −18
. x10
−15
A Lb5x10 gb10 g OP
= (0.0259 ) ln M
15 15

8.11
MN b15. x10 g PQ 10 2

or
(a) We find
F kT I = (480)(0.0259) = 12.4 cm / s Vbi = 0.617 V
Dp = µ p
HeK Then for
2

1
and Va = Vbi = 0.309 V
2
D τ = (12.4 )b0.1x10 g ⇒
−6
Lp = We find
F I
p pO

. µm
L p = 111 eVa

Also
pn = pnO exp
H K
kT

b15. x10 g 2
= b2.25 x10 g exp
F 0.309 I
H 0.0259 K
2 10 5
ni −3
pnO = = = 2.25 x10 cm
5
15
Nd 10
or
Then −3
pn = 3.42 x10 cm
b1.6x10 g(12.4)b2.25x10 g
10
−19 5
eD p pnO
(d)
J pO =
Lp
=
b111. x10 g −4
The total current is
or
J pO = 4.02 x10
−10
A / cm
2
b g FH eVkT IK
I = I pO + I nO exp a

= b 4.02 x10 + 6.74 x10 g exp

F 0.309 I
H 0.0259 K
−4
For A = 10 cm , then
2 −14 −15

−14
I pO = 4.02 x10 A
or
(b) I = 7.13 x10
−9
A
We have
F kT I = (1350)(0.0259) = 35 cm / s The hole current is
Dn = µ n
HeK
2

104
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

F eV I expLM −a x − x f OP b1.6x10 g(8)b3.81x10 g expF −3 I

−19 14

I p = I pO exp
H kT K N L Q
a

p
n
Jp =
2.83 x10 H 2.83K
−4

The electron current is given by or

J p = 0.597 A / cm
2
In = I − I p

= 7.13x10 − 4.02 x10

−9
b g −14 (c)
We have
F 0.309 I expLM −a x − x f OP eDn n pO F eV I
× exp
H 0.0259 K N L Q p
n
J nO =
Ln
exp
H kT K a

1 We can determine that

At x = x n + Lp −3
n pO = 4.5x10 cm and Ln = 10.7 µm
3
2
−9
I n = 7.13 x10 − 6.10 x10 b −9
g expFH −21IK Then
b1.6x10 g(23)b4.5x10 g expF 0.610 I
−19 3

or
−9
J nO =
10.7 x10 H 0.0259 K
−4

I n = 3.43 x10 A or
J nO = 0.262 A / cm
2

8.12 We can also find

(a) The excess hole concentration is given by J pO = 1.72 A / cm
2

δpn = pn − pnO

LMexpF eV I − 1OP expFG − x IJ

Then, at x = 3 µm ,
= pnO
N H kT K Q H L K
a
a f
J n 3 µm = J nO + J pO − J p 3 µm a f
p
= 0.262 + 1.72 − 0.597
We find or

pnO =
ni
2

=
b15. x10 g = 2.25x10 cm10 2

4 −3
a f
J n 3 µm = 1.39 A / cm
2

16
Nd 10
and 8.13

Lp = D pτ pO = b
(8) 0.01x10 −6 ⇒ g (a) From Problem 8.9 (Ge diode)
Low injection means
pn (0) = (0.1) N d = 10 cm
15 −3
L p = 2.83 µm
Then Now

b
δpn = 2.25x10
4
g pnO =
2
ni
=
b2.4 x10 g 13 2

= 5.76 x10 cm
10 −3

LM F 0.610 I − 1OP expF − x I Nd 10

16

N H 0.0259 K Q H 2.83x10 K
× exp −4 We have
FG V IJ
or
pn (0) = pnO exp
F − x I cm HV K
a

H 2.83x10 K
−3
δp = 3.81x10 exp
14 t
n −4
or
(b) L p (0) OP
V = V ln M n
We have
a f
d δpn
a
Np Q
t
nO

J p = − eD p
= (0.0259 ) lnG
F 10 IJ 15

b
eD p 3.81x10
dx
g expF − x I 14 H 5.76x10 K 10

=
b2.83x10 g H 2.83x10 K
−4 −4
or
Va = 0.253 V
−4
At x = 3 x10 cm , (b)
For Problem 8.10 (Si diode)

105
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

n p (0) = (0.1) N a = 10 cm
−3
(b) Va = 0.4 V , N p = 8.46 x10
15 5

n pO =
ni
2

=
b1.5x10 g 10 2

= 2.25 x10 cm
4 −3
(c) Va = 0.5 V , N p = 4.02 x10
7

16
Na 10 Similarly, the total number of excess holes in the
Then n-region is found to be:
LM n (0) OP eVa LM F I OP
Va = Vt ln
Nn Q
p N n = AL p pnO exp
kT
−1
N H K Q
pO
We find that
F 10 IJ
= (0.0259 ) lnG
15
. µm
Dp = 12.4 cm / s and L p = 111
2

H 2.25x10 K 4
Also
or
Va = 0.635 V pnO =
b1.5x10 g 10 2

= 2.25x10 cm
4 −3
16
10
Then

gLMNexpFH eVkT IK − 1OPQ

8.14
The excess electron concentration is given by b
N n = 2.50 x10
−2 a

δn p = n p − n pO
So
LMexpF I − 1OP expFG − x IJ
eVa (a) Va = 0.3 V , N n = 2.68 x10
3
= n pO
N H kT K Q H L K n
(b) Va = 0.4 V , N n = 1.27 x10
5

The total number of excess electrons is

z (c) Va = 0.5 V , N n = 6.05 x10

6
∞

N p = A δn p dx
0
8.15
We may note that
F eV I ∝ expFG − E IJ expF eV I
z expFGH −Lx IJK dx = − L expFGH −Lx IJK H kT K H kT K H kT K
∞ ∞ g
I ∝ ni exp
2 a a

n
= Ln
0 n n 0
Then
Then
LM F eV I − 1OP I ∝ expG
F eV − E IJ
H kT K
a g

N = AL n exp
N H kT K Q
a
p n pO

so
We can find
expG
F eV − E IJ
Dn = 35 cm / s and Ln = 59.2 µm
H kT K
2 a1 g1

I
Also =
F eV − E IJ
1

n pO =
ni
2

=
b15. x10 g 10 2

= 2.81x10 cm
4 −3
I 2
expG
H kT K
a2 g2

15
Na 8 x10
or
Then
b gb59.2 x10 gb2.81x10 g I F eV − eV − E + E IJ
= expG
H K
1 a1 a2 g1 g2
−3 −4
N p = 10
4

I kT
LM F eV I − 1OP 2

N H kT K Q
× exp a We have
10 x10
= expG
F 0.255 − 0.32 − 0.525 + E IJ
−3

H K
g2
or
LM F eV I − 1OP
−6
10 x10 0.0259

N H kT K Q
= 0.166 exp or
a
Np

10 = expG
F E − 0.59 IJ
H 0.0259 K
3 g2
Then we find the total number of excess
electrons in the p-region to be:
(a) Va = 0.3 V , N p = 1.78 x10
4 Then

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

E g 2 = 0.59 + (0.0259) ln 10 b g 3

8.17
which yields Computer Plot
E g 2 = 0.769 eV
8.18
One condition:
8.16
F eV I
(a) We have
LM 1 OP If
J S exp
H kT K = expF eV I = 10
a

Dn 1 Dp =
H kT K a 4

I S = Aeni +
2

NN a
τ nO Nd τ pO Q or
Ir J S

which can be written in the form

kT Va 0.5
I S = C ′ni =
b g lnb10 g =
2
4 4
e ln 10
F T I expFG − E IJ 3

= C ′N CO N VO
H 300 K H kT K or
g

kT FTI
or = 0.05429 = (0.0259 )
H 300 K
F − E IJ
= CT expG
e
which yields
H kT K
3 g
IS
T = 629 K
Second conditon:
(b)
Taking the ratio FG eD n + eD p IJ
FG − E IJ H L L K
n pO p nO
IS = A

F T I H kT K
g n p
exp
IS2
=G J ⋅
3

= Aen G
F D + D IJ
H T K expFG − E IJ
2 2

HLN L N K
2 n p

I S1 i

H kT K
1 g
n a p d

= AeN N M
L 1 D + 1 D OP expFG − E IJ
F T I L F 1 − 1 IJ OP
3

= G J ⋅ exp M + E G
C

N N τ N τ Q H kT K
V
n p g

H T K N H kT kT K Q
2
g a nO d pO

1 1 2
which becomes
1 10 = b10 gb1.6 x10 gb 2.8 x10 gb1.04 x10 g
−6 −4 −19 19 19
For T1 = 300 K , kT1 = 0.0259 , = 38.61
kT1
×G
F 1 25 + 1 10 IJ expFG − E IJ
H 5x10 10 10 10 K H kT K
g
1
For T2 = 400 K , kT2 = 0.03453 , = 28.96 18 −7 15 −7

kT2
or
(i) Germanium, E g = 0.66 eV
FG + E IJ = 4.66x10
H kT K
g

F I exp (0.66)(38.61 − 28.96)

10
3 exp
IS2 400
I S1
=
H 300 K For E g = 110
. eV ,
or Eg 110
.
IS2
I S1
= 1383
kT =
b g lnb4.66x10 g
ln 4.66 x10
10
= 10

or
(ii) Silicon, E g = 112
. eV FTI
IS2 F 400 I ⋅ exp (112. )(38.61 − 28.96)
3
kT = 0.04478 eV = (0.0259 )
H 300 K
I S1
=
H 300 K Then
T = 519 K
or This second condition yields a smaller
IS2 temperature, so the maximum temperature is
= 117
5
. x10 T = 519 K
I S1

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

8.19 LM FG V IJ − 1OP
N HV K Q
a
(a) We can write for the n-region pnO exp
d δpn
2
a f − δp n
=0
δp = n
FW I
t

2 sinh G J
2 2
dx Lp
HL K
n

The general solution is p

g b g b
δpn = A exp + x Lp + B exp − x L p R La x + W − xf OP − expLM −a x + W − xf OPUV
× Sexp M n n n n

The boundary condition at x = x gives T N L Q N L QW p p

L FV I O
n

or finally,
δp a x f = p MexpG J − 1P FG x + W − x IJ
N HV K Q
a
n n nO

L FV I O H L K
n n
t sinh
= A expb + x L g + B expb − x L g δp = p MexpG J − 1P ⋅
N H V K Q sinhFG W IJ
a p
n p n p
n nO

and the boundary condition at x = x + W gives

HL K
t n

δp a x + W f = 0
n n

= A exp a x + W f L + B exp −a x + W f L
n n n
(b)
n n p n n p
d aδp f
From this equation, we have J = − eD n

A = − B exp −2a x + W f L
p p
dx x = xn
n n p
L FV I O
− eD p MexpG J − 1P
N HV K Q
Then, from the first boundary condition, we a
p nO
obtain
L FV I O =
FW I
t

p MexpG J − 1P sinhG J
N HV K Q
a

HL K
n
nO
t

= B exp −a x + 2W f L + B expb − x L g
p

n n p n p F −1I F x + W − x IJ
× G J coshG
= B expb − x L g 1 − expb −2W L g HL K H L K
n n

n p n p p p x = xn

We then obtain Then

L FV I O
p MexpG J − 1P
eD p pnO FG W IJ ⋅ LexpFG V IJ − 1O
N HV K Q H L K MN H V K PQ
a
nO Jp = coth n a

Lp
expb − x L g 1 − expb −2W L g
B= t p t

n p n p

which can be written in the form 8.20

L FV I O
p MexpG J − 1P ⋅ exp a x + W f L
FG V IJ
N HV K Q HV K
a
I D ∝ ni exp
2 D
nO n n p

expbW L g − expb −W L g
B= t t

n p n p
For the temperature range 300 ≤ T ≤ 320 K ,
Also neglect the change in N C and N V
L FV I O
− p MexpG J − 1P ⋅ exp −a x + W f L
So

N HV K Q
a
−Eg FG IJ F I
eVD
H K H K
nO n n p
I D ∝ exp ⋅ exp
expbW L g − expb −W L g
A= t
kT kT

The solution can now be written as

n p n p

∝ exp M
L −b E − eV g OP g D

N kT Q
Taking the ratio of currents, but maintaining I D
a constant, we have

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

LM −b E − eV
exp
g D1 g OP Cd =
b2 x10 gb10 g ⇒ −3 −6

N kT Q⇒ 2(0.0259 )
1=
L −b E − eV g OP
1

exp M
−8
g D2 Cd = 3.86 x10 F
N kT 2 Q Then
E g − eVD 1 E g − eVD 2 Y = g d + jωCd
= or
kT1
We have
kT2
Y = 0.0772 + jω 3.86 x10 b −8
g
T = 300 K , VD1 = 0.60 V and
kT1 8.23 For a p n diode
+

kT1 = 0.0259 eV , = 0.0259 V

e I DQ I DQτ pO
T = 310 K gd = , Cd =
Vt 2Vt
kT2
kT2 = 0.02676 eV , = 0.02676 V Now
e −3
10
T = 320 K gd = = 3.86 x10
−2
S
kT3 0.0259
kT3 = 0.02763 eV , = 0.02763 V and
So, for T = 310 K ,
e
C =
b10 gb10 g = 1.93x10
−3 −7
−9
F
2(0.0259 )
d
. − 0.60
112 . − VD 2
112
=
0.0259 0.02676 Now
which yields 1 1 g d − jωCd
Z= = =
VD 2 = 0.5827 V Y g d + jωCd g d + ω Cd
2 2 2

For T = 320 K , We have ω = 2π f ,

. − 0.60
112 . − VD 3
112 We find:
= f = 10 kHz : Z = 25.9 − j 0.0814
0.0259 0.02763
which yields f = 100 kHz : Z = 25.9 − j 0.814
VD 3 = 0.5653 V f = 1 MHz : Z = 23.6 − j 7.41
f = 10 MHz : Z = 2.38 − j 7.49
8.21
Computer Plot
8.24
(b)
8.22 Two capacitances will be equal at some forward-
−3
e 2 x10 bias voltage.
gd = ⋅ ID = For a forward-bias voltage, the junction
kT 0.0259
capacitance is
or
g d = 0.0772 S
C = AM
L e ∈ N N OP 1/ 2

N 2aV − V fa N + N f Q
a d
j
Also
F e I bI
bi a a d

C =
1
2 H kT K
τ pO + I nOτ nO g The diffusion capacitance is
F 1 IJ b I τ + I τ g
C =G
d pO

We have
−6
d
H 2V K t
pO pO nO nO

τ pO = τ nO = 10 s where
I pO + I nO = 2 x10
−3
A Aen D FV I
⋅ expG J
2

HV K
p
I = i a

Then pO
N τ d pO t

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

and
FV I Cd = b3.278x10 gb10 g
1 −16 −7

⋅ expG J
2(0.0259 )
2
Aeni Dn
I nO =
HV K
a

gb10 g ⋅ expFGH VV IJK

Na τ nO
We find
t

b
+ 3.377 x10
−15 −6 a

Dp = (320)(0.0259) = 8.29 cm / s
2 t

or
Dn = (850)(0.0259 ) = 22.0 cm / s
2
FG V IJ
HV K
−20
Cd = 6.583 x10 ⋅ exp a

and
Lb10 gb5x10 g OP = 0.7363 V
V = (0.0259 ) ln M
17 15
We want to set C j = Cd
t

bi
MN b1.5x10 g PQ 10 2
So

b10 gLMN 30..945 x10 O

−16 1/ 2
Now, we obtain
L b1.6x10 g(11.7)b8.85x10 g
C = b10 g M
−19 −14
−4
P
7363 − V Q
2aV − V f
−4 a
j
N F V I
H 0.0259 K
bi a −20
= 6.583 x10 ⋅ exp a

b5x10 gb10 g OP 15 17 1/ 2

×
b5x10 + 10 g Q 15 17
By trial and error, we find
Va = 0.463 V
or At this voltage,

C = b10 g M
L 3.945x10 OP −16 1/ 2
C j = Cd ≈ 3.8 pF

N aV − V f Q
−4
j
bi a

We also obtain 8.25

b10 gb1.6x10 gb15. x10 g
−4 −19 10 2
8.29
+
For a p n diode, I pO >> I nO , then
I = pO
10
17
10
−7
FG 1 IJ b I τ g
FG V IJ Cd =
H 2V K pO pO

× exp
HV K
a t

Now
t

or τ pO −6
= 2.5 x10
FV I
I = 3.278 x10 expG J
2Vt
F/A

HV K
−16 a
pO
Then
d i
t −6
Also τ pO = 2(0.0259) 2.5x10

I =
b10 gb1.6x10 gb1.5x10 g
−4 −19 10 2
22 or
−7
nO
5 x10
15
10
−6 τ pO = 1.3x10 s
FG V IJ At 1 mA ,
× exp
HV K b gb10 g ⇒
a
−6 −3
t
Cd = 2.5x10
or Cd = 2.5 x10
−9
F
FV I
expG J
HV K
−15
I nO = 3.377 x10 a

8.26
F e I Ab I
t

We can now write

(a) Cd =
1
2 H kT K
pO
τ pO + I nOτ nO g
+
For a one-sided n p diode, I nO >> I pO , then
1 F e I Aa I τ f
2 H kT K
Cd = nO nO

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

so 0.10
1 F 1 I b10 ga I fb10 g Rn =
b10 gb1.6x10 g(1350)b10 g
2 H 0.0259 K
−12 −3 −7 −2 −19 15
10 = nO

or
or
Rn = 46.3 Ω
I nO = I D = 0.518 mA
The total series resistance is
(b) R = R p + Rn = 26 + 46.3 ⇒
eDn n pO FG V IJ R = 72.3 Ω
I nO = A
HV K
a
exp
Ln t (b)
We find V = IR ⇒ 0.1 = I ( 72.3)
Ln = Dnτ nO = 15.8 µm and or
2
I = 1.38 mA
ni −3
n pO = = 2.25 x10 cm
4

Na 8.28
Then ρ n L( n ) ρ p L( p )
0.518 x10
−3 R= +
A(n) A( p)
b1.6x10 g(25)b2.25x10 gb10 g expFG V IJ
−19 4 −3

b g + (0.1)b10 g
(0.2) 10 −2
HV K
−2
= −4
a

15.8 x10 t
= −5 −5
2 x10 2 x10
or
F V I or
R = 150 Ω
H 0.0259 K
−3 −14
0.518 x10 = 5.70 x10 exp a

We can write
We find
FG I IJ
Va = 0.594 V V = I D R + Vt ln
HI K
D

(c) S

F e II 1 (a) (i) I D = 1 mA
gd =
H kT K D
=
rd
⇒
V = 10 b g(150) + (0.0259) lnFGH 1010 IJK
−3
−10
−3

0.0259
rd = −3 or
0.518 x10
V = 0.567 V
or
rd = 50 Ω (ii) I D = 10 mA

b g(150) + (0.0259) lnFGH 1010x10 IJK

−3
−3

8.27 V = 10 x10 −10

(a) p-region
or V = 1.98 V
ρpL L L
Rp =
A
= =
σ p A A eµ p N a b g (b)
For R = 0
so (i) I D = 1 mA
Rp =
b10 gb1.6x10 g(480)b10 g
0.2
V = (0.0259 ) ln
FG 10 IJ ⇒
−3

or
−2 −19 16

H 10 K−10

V = 0.417 V
R p = 26 Ω
(ii) I D = 10 mA
n-region
ρn L L L
V = (0.0259 ) ln
FG 10x10 IJ ⇒ −3

Rn =
A
=
σnA
=
a
A eµ n N d f H 10 K −10

so V = 0.477 V

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

8.29 pnO =
b1.8x10 g 6 2

= 3.24 x10 cm
−4 −3
16
1 10
rd = 48 Ω = ⇒ g d = 0.0208 Also
gd
We have Ln = b g
Dnτ nO = (200) 10 −8 = 14.2 µm

L = D τ = (6)b10 g = 2.45 µm
e
⋅ I D ⇒ I D = (0.0208)(0.0259 )
−8
gd = p p pO
kT
or Then
I D = 0.539 mA
J =
b1.6x10 g(200)b3.24 x10 g
S
−19 −4

−4
Also 14.2 x10
FG V IJ ⇒ V = V lnFG I IJ b1.6x10 g(6)b3.24 x10 g −19 −4

HV K
I D = I S exp
HI K
a D
a t + −4
t S 2.45 x10
so so
F 0.539 x10 IJ
V = (0.0259 ) lnG
−3
J S = 8.57 x10
−18
A / cm
2

a
H 2 x10 K −11
⇒
Reverse-biased generation current density
en W
Va = 0.443 V J gen = i
2τ O
8.30 We have
1 FG 1 IJ expFG V IJ
dI D FG N N IJ
Vbi = Vt ln
H n K
a d
=
HV K H V K = IS a
(a) 2
r dV i

or
d a t t

L b10 gb10 g OP
= ( 0.0259 ) ln M
16 16

1 10 F 0.020 I
−13

NM b1.8x10 g PQ 2

H 0.0259 K
6
= ⋅ exp
r 0.0259
d or
which yields Vbi = 116
. V
rd = 1.2 x10 Ω
11
And
(b) L 2 ∈aV + V f FG N + N IJ OP
W=M
1/ 2

N e H N N KQ
bi R a d
For Va = −0.020 V ,
1 10 F −0.020 I
−13

L 2(131. )b8.85x10 g(116. + 5)

a d

H 0.0259 K
−14
= ⋅ exp
rd 0.0259 =M
or N 1.6 x10
−19

rd = 5.6 x10 Ω
11
L 10 + 10 OPOP
×M
16 16
1/ 2

8.31
N b10 gb10 g QQ 16 16

or
Ideal reverse-saturation current density −4
eDn n pO eD p pnO W = 1.34 x10 cm
JS = + Then
Ln Lp
b1.6x10 gb1.8x10 gb1.34 x10 g
−19 6 −4

2b10 g
We find J gen =
b18. x10 g
−8
6 2
2
ni −4 −3
n pO = = 16
= 3.24 x10 cm or
Na 10 −9
J gen = 1.93x10
2
A / cm
and
Generation current dominates in GaAs reverse-
biased junctions.

112
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

(b)
8.32 FG V IJ = J FG V IJ
(a) We can write
HV K H 2V K
a a
J S exp exp
LM 1 D + 1 OP
gen

Dp t t

J S = eni
2 n

NN τ N a nO d
τ pO Q At T = 300 K
b
J S = 1.5 x10
10
g b185. x10 g
2 −31

= n b1.6 x10 gM
2
L 1 2519 or
i
N10 5x10 16 −7
J S = 4.16 x10
−11
A / cm
2

+
1 10 OP and
b
J gen = 15 gb182. x10 g ⇒ −17

Q
10
16 −7 . x10
10 5 x10
or
or
b g
−7
J gen = 2.73x10
2
−31 A / cm
J S = ni 185
2
. x10
Then we can write
We also have
en W VFG IJ J gen 2.73 x10
−7

exp a =
H K = = 6.56 x10
3
J gen = i 2Vt JS 4.16 x10
−11
2τ O
so that
b g⇒
−4
For Vbi + VR = 5 V , we find W = 114
. x10 cm
Va = 2(0.0259) ln 6.56 x10
3

So
b1.6x10 gb114. x10 gn −19 −4
i
Va = 0.455 V

2b5 x10 g
J gen = −7

8.33
or (a) We can write
J = n b182
. x10 g LM 1 OP
−17
gen i Dn 1 Dp
J S = eni +
2

When J S = J gen ,
. x10 ni = 182
185
−31
. x10
−17
NN a
τ nO Nd τ pO Q
We find
which yields Dn = ( 3000)(0.0259 ) = 77.7 cm / s
2

−3
ni = 9.88 x10 cm
13

Dp = (200)(0.0259) = 518
2
. cm / s
We have
F − E IJ
= N N expG
Then

H kT K gb18. x10 g LMN101

g

b
2
ni C V −19 2 77.7
J S = 1.6 x10
6
17 −8
Then 10

b9.88x10 g = b2.8x10 gb1.04 x10 gFH 300T IK

2
3

+
1 5.18 OP
Q
13 19 19
17 −8
10 10
L −112. OP
× exp M
or

N (0.0259)aT 300f Q
−19
J S = 5.75 x10
2
A / cm
so
By trial and error, we find
T = 505 K I S = AJ S = 10 b gb5.75x10 g
−3 −19

At this temperature or
J S = J gen = 182
. x10 b −17
gb9.88x10 g ⇒ 13
I S = 5.75 x10
−22
A
J S = J gen = 18
. x10
−3
A / cm
2 We also have
en WA
I gen = i
2τ O
Now

113
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

FG N N IJ L 2(131. )b8.85x10 g(1.28 − 0.3) FG 2 x10

W=M
−14 17
IJ OP 1/ 2

Vbi = Vt ln
H n K
a d
2
i
N 1.6 x10 H 10
−19 34
KQ
L b10 gb10 g OP
= ( 0.0259 ) ln M
17 17
or

NM b18. x10 g PQ
−4
6 2 W = 0.169 x10 cm
Then
or
Vbi = 1.28 V
eniWA FG V IJ
I rec =
H 2V K
a
exp
Also 2τ O t

L 2 ∈aV + V f FG N + N IJ OP
W=M
1/ 2
b1.6x10 −19
gb18. x10 gb0.169 x10 gb10 g
6 −4 −3

N e H N N KQ 2b10 g
bi R a d
= −8
a d

L 2(13.1)b8.85x10 g(1.28 + 5)
=M
−14
L 0.3 OP
× exp M
N 1.6 x10
−19
N 2(0.0259) Q
F 10 + 10 I OP
×G
17 17
1/ 2 or

H b10 gb10 gJK Q

−11
I rec = 7.96 x10 A
17 17

For Va = 0.5 V
or
W = 0.427 x10 cm
−4 L 2(131. )b8.85x10 g(1.28 − 0.5) FG 2 x10
W=M
−14 17
IJ OP 1/ 2

so N 1.6 x10 H 10
−19 34
KQ
b1.6x10 gb1.8x10 gb0.427 x10 gb10 g
−19 6 −4 −3
or
2b10 g
I gen = −4
−8 W = 0.150 x10 cm
or Then

I gen = 6.15x10
−13
A b1.6x10 gb1.8x10 gb0.15x10 gb10 g
−19 6 −4 −3

2b10 g
I rec = −8

The total reverse-bias current

I R = I S + I gen = 5.75x10
−22
+ 6.15x10
−13
L 0.5 OP
× exp M
or
−13
N 2(0.0259) Q
I R ≈ 6.15x10 A or
−9
Forward Bias: Ideal diffusion current I rec = 3.36 x10 A
For Va = 0.3 V Total forward-bias current:
FG V IJ = b5.75x10 g expF 0.3 I For Va = 0.3 V ;
HV K H 0.0259 K
−22
I D = I S exp a
−17 −11

t
I D = 6.17 x10 + 7.96 x10
or or
−11
I D = 6.17 x10
−17
A I D ≈ 7.96 x10 A

For Va = 0.5 V For Va = 0.5 V

b g expFH 0.0259
0.5 I
−13 −9
I D = 1.39 x10 + 3.36 x10
K
−22
I D = 5.75 x10
or
−9
or I D ≈ 3.36 x10 A
−13
I D = 1.39 x10 A (b)
Recombination current Reverse-bias; ratio of generation to ideal
diffusion current:
For Va = 0.3 V :
I gen 6.15x10 −13
= −22
IS 5.75 x10

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Solutions Manual Problem Solutions

Ratio = 1.07 x10

9 Then the recombination rate can be written as
Forward bias: Ratio of recombination to ideal
R=
bn e gbn e i
η
i
ηa
⋅e
−η
g−n 2
i

diffusion current: η ηa −η
τ O ni e + ni + ni e ⋅ e + ni
For Va = 0.3 V
or
I rec
=
7.96 x10
−11
ni e − 1 b ηa
g
ID 6.17 x10
−17

Ratio = 1.29 x10

6
R=
b
τO 2 + e + e ⋅e
η ηa −η
g
To find the maximum recombination rate, set
For Va = 0.5 V dR
−9
=0
I rec 3.36 x10 dη
=
ID 1.39 x10
−13

=
ni e − 1b ηa
g⋅ d 2 + e + e ⋅e
η ηa −η −1

Ratio = 2.42 x10

4
τO dx
or
8.34
Computer Plot 0=
b
ni e − 1
ηa
g ⋅ (−1) 2 + e + e η ηa
⋅e
−η −2

τO
8.35 × e −e ⋅e
η ηa −η

Computer Plot
which simplifies to
8.36
0=
b
− ni e − 1
ηa
g⋅ e − e ⋅e
η ηa −η

Computer Plot τO η ηa −η 2
2 + e + e ⋅e
8.37 The denominator is not zero, so we have
η ηa −η
We have that e − e ⋅e = 0⇒
np − ni
2
2η η 1
R= e = e ⇒ η = ηa a

τ pO (n + n ′) + τ nO ( p + p ′ ) 2
Then the maximum recombination rate becomes
Let τ pO = τ nO = τ O and n ′ = p ′ = ni
We can write Rmax =
b
ni e − 1
ηa
g
FE −E I τO 2 +e
ηa 2
+ e ⋅e
ηa −ηa 2

n = n exp
H kT K
i
Fn Fi

ni e − 1b ηa
g
p = n expG
F E − E IJ =
τO 2+ e
ηa 2
+e
ηa 2

H kT K
Fi Fp
i
or
We also have b − 1g ni e
ηa

a E − E f + b E − E g = eV
Fn Fi Fi Fp a
R =
2τ b e
max
+ 1g O
ηa 2

so that
b E − E g = eV − a E − E f which can be written as
LM F eV I − 1OP
N H kT K Q
Fi Fp a Fn Fi
a
Then n exp

LM eV − a E − E f OP
i

p = n exp
N kT Q
R = max
LM F eV I + 1OP
N H 2kT K Q
a Fn Fi
i 2τ exp O
a

F eV I ⋅ expLM −a E − E f OP F kT I , then we can neglect the (-1)

= n exp
H kT K N kT Q
i
a Fn Fi
If V >>
a
HeK
Define term in the numerator and the (+1) term in the
eV FE −E I denominator so we finally have
η =
a
kT
and η =a

H kT K Fn Fi

115
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

ni F eV I J S = 1.64 x10
−11
A / cm
2

Rmax =
2τ O
exp
H 2kT K a

Now
Q.E.D. FG V IJ
J D = J S exp
HV K
D

t
8.38 Also
We have
J = 0 = JG − J D

z
W

J gen = eGdx or
0 FG V IJ
HV K
−3 −11
0 = 25 x10 − 1.64 x10 exp D

In this case, G = g ′ = 4 x10 cm s , that is a

19 −3 −1
t
constant through the space charge region. Then which yields
J gen = eg ′W FG V IJ = 1.52 x10
HV K
D 9
We find exp

V = V lnG
F N N IJ or
t

H n K
a d

= V lnb152
. x10 g
bi t 2
9
i VD
L b5x10 gb5x10 g OP = 0.659 V
t

so
= (0.0259 ) ln M
15 15

NM b1.5x10 g PQ 10 2 VD = 0.548 V

and
8.40
W=M
L 2 ∈aV + V f FG N + N IJ OP 1/ 2

∈Ε crit
2

N e H N N KQ
bi R a d
VB =
a d 2 eN B

=M
L 2(11.7)b8.85x10 g(0.659 + 10) −14
or

N 1.6 x10
−19
b
(11.7) 8.85x10 −14 4 x105 gb g 2

F 5x10 + 5x10 I OP 15 15
1/ 2
30 =
b
2 1.6 x10
−19
gN
×G
H b5x10 gb5x10 gJK Q
B

15 15
which yields
−3
N B = N d = 1.73 x10 cm
16

or
−4
W = 2.35 x10 cm
8.41
Then For the breakdown voltage, we need
b
J gen = 1.6 x10
−19
gb4 x10 gb2.35x10 g19 −4
−3
N d = 3 x10 cm and for this doping, we find
15

or
µ p = 430 cm / V − s . Then
2
−3
J gen = 15
2
. x10 A / cm
Dp = (430)(0.0259) = 1114
2
. cm / s
+
8.39 For the p n junction,

J S = eni
LM 1 D + 1 D OP
2 n p
J S = eni ⋅
2 1 Dp

NN τ N τ Q a nO d pO Nd τ pO

= b1.6 x10 gb15

−19
L 1 18
. x10 g M
10 2 b1.6x10 gb15. x10 g −19 10 2
1114
.
N 3x10 10 16 −7 =
3 x10
15
10
−7

+
1 6 OP or

Q
−10
J S = 1.27 x10
2
18 −7 A / cm
10 10
Then
or

116
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

FG V IJ 8.44
I = J S A exp
HV K
a
+
For a silicon p n junction with
t

g A expFH 0.00259
.65 I
−3
N d = 5 x10 cm and VB ≈ 100 V
15

−3
2 x10 = 1.27 x10 b −10

K Neglecting Vbi compared to VB

Finally
xn ≈
LM 2 ∈V OP B
1/ 2

A = 1.99 x10 cm
−4 2

N eN Q d

8.42 =M
L 2(11.7)b8.85x10 g(100) OP −14 1/ 2

+
GaAs, n p , and N a = 10 cm
16 −3
N b1.6x10 gb5x10 g Q −19 15

From Figure 8.25 or

VB ≈ 75 V x n ( min) = 5.09 µm

8.43 8.45
eN d xn We find
Ε max =
∈
Vbi
Lb10 gb10 g OP = 0.933 V
= (0.0259 ) ln M
18 18

We can write
Ε ∈
MN b1.5x10 g PQ 10 2

x n = max Now
eN d eN d xn
b4 x10 g(11.7)b8.85x10 g
5 −14 Ε max =
∈
=
b1.6x10 gb5x10 g −19 16 so
or b1.6x10 gb10 gx −19 18
n

(11.7)b8.85x10 g
10 =
6

−5 −14
x n = 5.18 x10 cm
We find which yields
L b5x10 gb5x10 g OP = 0.778 V
V = ( 0.0259 ) ln M
16 16
x n = 6.47 x10 cm
−6

bi
MN b15. x10 g PQ 10 2 Now
L 2 ∈aV + V f FG N IJ FG 1 IJ OP 1/ 2

x =M
N e H N KH N + N KQ
Now bi R a

L 2 ∈aV + V f FG N IJ FG 1 IJ OP
n
1/ 2

x =M
d a d

N e H N KH N + N KQ
bi R a
Then

b6.47 x10 g = LMN 2(11.71.)6bx810.85x10 g

n
d a d −14
−6 2
or

b5.18x10 g = LMN 2(11.71.)6bx810.85x10 g

−19
−14

F 10 IJ F 1 I OP
−5 2

×aV + V fG
18
−19

F 5x10 IJ F 1 I OP H 10 K H 10 + 10 K Q
bi R 18 18 18

× aV + V fG
16

H 5x10 K H 5x10 + 5x10 K Q

bi R 16 16 16
which yields
Vbi + VR = 6.468 V
which yields
2.68 x10 = 1.29 x10 aV + V f
or
−9 −10
bi R VR = 5.54 V
so
Vbi + VR = 20.7 ⇒ VR = 19.9 V
8.46
+
Assume silicon: For an n p junction

L 2 ∈aV + V f OP
=M bi R
1/ 2

xp
N eN Q a

117
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

Assume Vbi << VR tS

= 0.228
(a) τ pO
For x p = 75 µm
Then

b75x10 g = b1.6x10
−4 2 b
2(11.7 ) 8.85 x10 gV
−14
R
8.49
We want
−19
gb10 g
15
tS
= 0.2
τ pO
which yields VR = 4.35 x10 V
3

(b) Then
For x p = 150 µm , we find tS 1
erf = = erf 0.2
τ pO IR
VR = 1.74 x10 V
4
1+
From Figure 8.25, the breakdown voltage is IF
approximately 300 V. So, in each case, where
breakdown is reached first. erf 0.2 = erf (0.447 ) = 0.473
We obtain
8.47
Impurity gradient IR 1 IR
= −1⇒ = 111
.
2 x10
18 IF 0.473 IF
−4
a= = 10 cm
22

2 x10
−4 We have
From the figure FG −t IJ
H τ K = 1 + (0.1)FG I IJ = 111.
2
VB = 15 V exp
t2
HI K
pO
erf + R

8.48
τ pO F t IJ
πG
F

Hτ K
2

IR
(a) If = 0.2 pO

IF By trial and error,

Then we have t2
= 0.65
ts IF 1 1 τ pO
erf = = =
τ pO IF + IR IR 1 + 0.2
1+
IF 8.50
or C j = 18 pF at VR = 0
tS C j = 4.2 pF at VR = 10 V
erf = 0.833
τ pO We have τ nO = τ pO = 10
−7
s , I F = 2 mA
We find
VR 10
tS tS And I R ≈ = = 1 mA
= 0.978 ⇒ = 0.956 R 10
τ pO τ pO So
(b) FG IFIJ = b10 g lnF1 + 2 I
H I K H 1K
−7
t S ≈ τ pO ln 1 +
IR
If = 1.0 , then R

IF or
−7
t S = 11
. x10 s
tS 1
erf = = 0.5 Also
τ pO 1+1
18 + 4.2
which yields Cavg = = 111
. pF
2
The time constant is

118
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

τ S = RCavg = 10 b gb111. x10 g = 111. x10

4 −12 −7
s
=
LM 2(11.7)b8.85x10 g(114. − 0.40)
−14

Now
Turn-off time = t S + τ S = (11 . ) × 10
−7
N −19
1.6 x10
. + 111 s
F 5x10 + 5x10
×G
19 19 I OP 1/ 2

Or
2.21x10
−7
s H b5x10 g 19 2 JK PQ
which yields
8.51 −7
W = 6.19 x10 cm = 61.9 A
°

LM b5x10 g OP = 114. V
Vbi = ( 0.0259 ) ln
19 2

MN b1.5x10 g PQ 10 2
8.52
Sketch
We find

W=M
L 2 ∈aV − V f FG N + N IJ OP 1/ 2

N e H N N KQ
bi a a d

a d

119
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 8
Solutions Manual Problem Solutions

(page left blank)

120
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

Chapter 9
Problem Solutions
9.2
9.1 (a) φ BO = φ m − χ = 51. − 4.01
(a) We have or
FG N IJ φ BO = 1.09 V
eφ n = eVt ln
HN K
C

(b)
d

F 2.8x10 IJ = 0.206 eV FG N IJ
= (0.0259 ) lnG HN K
19
φ n = Vt ln C

H 10 K 16 d

(c)
= (0.0259 ) ln
FG 2.8x10 IJ = 0.265 V 19

φ BO = φ m − χ = 4.28 − 4.01 H 10 K 15

or Then
φ BO = 0.27 V Vbi = φ BO − φ n = 1.09 − 0.265
and or
Vbi = φ BO − φ n = 0.27 − 0.206 Vbi = 0.825 V
or (c)
Vbi = 0.064 V
Also W=x =M
L 2 ∈V OP bi
1/ 2

L 2 ∈V OP 1/ 2 N eN Q
d
d

x =M
d
N eN Q
bi

L 2(11.7)b8.85x10 g(0.825) OP
=M
−14
1/ 2

N b1.6x10 gb10 g Q
d

L 2(11.7)b8.85x10 g(0.064) OP
−19 15
−14 1/ 2

=M
N b1.6x10 gb10 g Q −19 16
or
−4
W = 1.03 x10 cm
or
−6
(d)
x d = 9.1x10 cm eN d xd
Then Ε max =
∈
Ε max =
eN d xd
b1.6x10 gb10 gb1.03x10 g
−19 15 −4

(11.7)b8.85x10 g
∈ =
b gb gb g
−14
−19 16 −6
1.6 x10 10 9.1x10
(11.7)b8.85x10 g
= −14
or
Ε max = 159
4
. x10 V / cm
or
Ε max = 1.41x10 V / cm
4

9.3
(d) (a) Gold on n-type GaAs
Using the figure, φ Bn = 0.55 V χ = 4.07 V and φ m = 5.1 V
So φ BO = φ m − χ = 5.1 − 4.07
Vbi = φ Bn − φ n = 0.55 − 0.206 and
or φ BO = 1.03 V
Vbi = 0.344 V (b)
We then find FG N IJ
φ n = Vt ln
HN K
C
−5
x d = 2.11x10 cm and Ε max = 3.26 x10 V / cm
4

123
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

= (0.0259 ) ln
FG 4.7 x10 IJ 17
b1.6x10 gb5x10 gb0.410x10 g
−19 16 −4

H 5x10 K 16
=
. )b8.85 x10 g
(131 −14

or or
φ n = 0.0580 V Ε max = 2.83 x10 V / cm
5

(c)
Vbi = φ BO − φ n = 1.03 − 0.058 9.5
or Gold, n-type silicon junction. From the figure,
Vbi = 0.972 V φ Bn = 0.81 V
(d) For N d = 5 x10 cm , we have
15 −3

xd =
LM 2 ∈aV + V f OP
bi R
1/ 2

FG N IJ
N eN Q d
φ n = Vt ln
HN K
C

L 2(131. )b8.85x10 g(0.972 + 5) OP

d

=M
−14
1/ 2

= (0.0259 ) ln
FG 2.8x10 IJ = φ 19

N b1.6x10 gb5x10 g Q −19 16

H 5x10 K 15 n
= 0.224 V

or Then
x d = 0.416 µm Vbi = 0.81 − 0.224 = 0.586 V
(e) (a)
Now
eN d xd
Ε max =
∈ L e ∈ N OP
C′ = M
1/ 2

N 2aV + V f Q
d

b1.6x10 gb5x10 gb0.416x10 g

−19 16 −4
bi R
=
. )b8.85 x10 g
(131 −14
Lb1.6x10 g(11.7)b8.85x10 gb5x10 g OP
=M
−19 −14 15
1/ 2

or
Ε max = 2.87 x10 V / cm
5
MN 2(0.586 + 4 ) PQ
or
C ′ = 9.50 x10
−9 2
F / cm
9.4
For A = 5 x10 cm , C = C ′A
−4 2

φ Bn = 0.86 V and φ n = 0.058 V (Problem 9.3)

So
Then
C = 4.75 pF
Vbi = φ Bn − φ n = 0.86 − 0.058
(b)
or −3
For N d = 5 x10 cm , we find
16
Vbi = 0.802 V
and
φ n = (0.0259) ln
FG 2.8x10 IJ = 0.164 V19

xd
L 2 ∈aV + V f OP
=M bi R
1/ 2
H 5x10 K 16

N eN Q d
Then
Vbi = 0.81 − 0.164 = 0.646 V
L 2(131. )b8.85x10 g(0.802 + 5) OP
=M
−14 1/ 2
Now

N b1.6x10 gb5x10 g Q −19 16

Lb1.6x10 g(11.7)b8.85x10 gb5x10 g OP
C′ = M
−19 −14 16 1/ 2

or]
x d = 0.410 µm
N 2(0.646 + 4 ) Q
or
Also C ′ = 2.99 x10 F / cm
−8 2

eN d xd and
Ε max =
∈ C = C ′A
so
C = 15 pF

124
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

9.6 L 2(11.7)b8.85x10 g(0.344) OP

=M
−14
1/ 2

(a) From the figure, Vbi = 0.90 V N b1.6x10 gb10 g Q −19 16

(b) We find or
F 1I 2
x d = 0.211 µm
∆
H C′ K =
3 x10 − 0
15

= 1.03 x10
15
Also
∆V R 2 − ( −0.9 ) eN d xd
Ε max =
and ∈

1.03 x10 =
15 2 b1.6x10 gb10 gb0.211x10 g
−19 16 −4

(11.7)b8.85x10 g
=
e ∈ Nd −14

Then we can write or

2 Ε max = 3.26 x10 V / cm
4
Nd =
b1.6x10 g(131. )b8.85x10 gb1.03x10 g
−19 −14 15
(b)
or
∆φ =
eΕ Lb1.6x10 gb3.26x10 g OP
=M
−19 4 1/ 2

4π ∈ N 4π (11.7 )b8.85 x10 g Q

−3
N d = 1.05 x10 cm
16
−14

(c)
F N IJ
= V lnG
or
∆φ = 20.0 mV
φn
HN K
C
t
d Also

= ( 0.0259 ) ln
FG 4.7 x10 IJ 17
e
H 1.05x10 K 16
xm =
16π ∈ Ε
or
φ n = 0.0985 V
L
=M
b1.6x10 g OP −19 1/ 2

(d) N16π (11.7)b8.85x10 gb3.26x10 g Q −14 4

φ Bn = Vbi + φ n = 0.90 + 0.0985 or

−6
or x m = 0.307 x10 cm
φ Bn = 0.9985 V (c)
For VR = 4 V
9.7
From the figure, φ Bn = 0.55 V
L 2(11.7)b8.85x10 g(0.344 + 4) OP
=M
−14
1/ 2

N b1.6x10 gb10 g Q
xd −19 16
(a)
FG N IJ or
φ n = Vt ln
HN K
C
x d = 0.75 µm
d

F 2.8x10 IJ = 0.206 V
= ( 0.0259 ) lnG
19
and
b1.6x10 gb10 gb0.75x10 g
−19 16 −4

H 10 K 16 Ε max =
(11.7)b8.85x10 g −14

Then
or
Vbi = φ Bn − φ n = 0.55 − 0.206
Ε max = 116
5
. x10 V / cm
or
Vbi = 0.344 V We find
We find eΕ
∆φ = ⇒ ∆φ = 37.8 mV
L 2 ∈V OP
=M bi
1/ 2
4π ∈
xd
N eN Q d
and

125
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

xm =
e
⇒ x m = 0.163 x10 cm
−6 L 2(131. )b8.85x10 g(0.812) OP
=M
−14
1/ 2

16π ∈ Ε
N b1.6x10 gb5x10 g Q −19 16

or
9.8
x d = 0.153 µm
We have
−e Then
−φ ( x ) = − Εx eN d xd
16π ∈ x Ε max =
or ∈

eφ ( x ) =
e
2
Lb1.6x10 gb5x10 gb0.153x10 g OP
=M
−19 16 −4

N (13.1)b8.85x10 g Q
+ Εex −14
16π ∈ x
Now or
d (eφ ( x )) −e
2
Ε max = 1.06 x10 V / cm
5
=0= + Εe
16π ∈ x
2
dx (b)
2
Solving for x , we find We want ∆φ to be 7% or φ Bn ,
e So
x =
2

16π ∈ Ε ∆φ = ( 0.07 )(0.87) = 0.0609 V

or Now

x = xm =
e
∆φ =
eΕ
⇒Ε=
b∆φ g(4π ∈) 2

16π ∈ Ε 4π ∈ e
Substituting this value of xm = x into the so
equation for the potential, we find
Ε=
(0.0609)2 (4π )(131
. ) 8.85 x10
−14
b g
−19
e e 1.6 x10
∆φ = +Ε or
e 16π ∈ Ε
16π ∈ Ε max = 3.38 x10 V / cm
5

16π ∈ Ε
Now
which yields
eN d xd ∈Ε
eΕ Ε max = ⇒ xd =
∆φ = ∈ eN d
4π ∈
so
b gb g
(13.1) 8.85x10 −14 3.38 x105
9.9
Gold, n-type GaAs, from the figure φ Bn = 0.87 V
xd =
b1.6x10 gb5x10 g
−19 16

(a) or
FG N IJ x d = 0.49 µm
φ n = Vt ln
HN K
C
Then
d

F 4.7 x10 IJ = 0.058 V L 2 ∈bV + V g OP

=M
1/ 2

= ( 0.0259 ) lnG
−4
xd = 0.49 x10
17 bi R

H 5x10 K 16
N eN Q d

Then or we can write

aV + V f =
2
Vbi = φ Bn − φ n = 0.87 − 0.058 eN d xd
bi R
or 2∈
Vbi = 0.812 V
b1.6x10 gb5x10 gb0.49 x10 g
−19 16 −4 2

. )b8.85 x10 g
Also =
2(131
−14

xd =
LM 2 ∈V OP bi
1/ 2

or
N eN Q d

126
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

Vbi + VR = 8.28 V = 0.812 + VR With interface states, the barrier height is less
or sensitive to the metal work function.
VR = 7.47 V
9.12
We have that
9.10
Computer Plot
b E − eφ
g O
− eφ Bn g
9.11
=
eDit
1
2 e ∈ N d φ Bn − φ n a f
(a) φ BO = φ m − χ = 5.2 − 4.07
− aχ + φ f
∈i
or − φm Bn

φ BO = 113
. V eDit δ

(b) Let eDit = Dit′ cm eV b −2 −1

g . Then we can write
We have e(112
. − 0.230 − 0.60)
b E − eφg O g
− eφ Bn =
1
eDit
a f
2 e ∈ N d φ Bn − φ n
=
1
b
2 1.6 x10 g(11.7)b8.85x10 g
−19 −14

Dit′
− aχ + φ f
∈i
− φm ×b5 x10 g(0.60 − 0.164 )
16 1/ 2
Bn
eDit δ
which becomes b8.85x10 g 4.75 − (4.01 + 0.60)
−14

a
e 1.43 − 0.60 − φ Bn f −
D ′ b20 x10 g
it
−8

FeG 10 IJ b g(131. )b8.85x10 g

1 −19 −14 We find that
= 2 1.6 x10
Dit′ = 4.97 x10 cm eV
13 11 −2 −1

HeK
b gaφ − 0.10f × 10
16
Bn
1/ 2 9.13
FG N IJ
b8.85x10 g 5.2 − a4.07 + φ f
−14
(a) φ n = Vt ln
HN K
C

−
F 10 IJ b25x10 g
eG
13 Bn d

FG 2.8x10 IJ
HeK
−8 19

= (0.0259 ) ln
or
H 10 K 16

0.83 − φ Bn or
φ n = 0.206 V
= 0.038 φ Bn = 0.10 − 0.221 113
. − φ Bn a f (b)
We then find Vbi = φ Bn − φ n = 0.89 − 0.206
φ Bn = 0.858 V
or
(c) Vbi = 0.684 V
If φ m = 4.5 V , then
(c)
φ BO = φ m − χ = 4.5 − 4.07 F −eφ I
J ST = A T exp
H kT K
* 2 Bn
or
φ BO = 0.43 V
For silicon, A = 120 A / cm / ° K
* 2 2

From part (b), we have

Then
0.83 − φ Bn
a f
−0.89 F I
J ST = (120)(300) exp
H K
2

= 0.038 φ Bn − 0.10 − 0.221 4.5 − 4.07 + φ Bn

0.0259
We then find or
φ Bn = 0.733 V J ST = 1.3 x10
−8
A / cm
2

127
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

(d) Now
F I eVa LM −0.68 OP
H kT K
J n = J ST exp J ST = (120)(400) exp
2

N (0.0259)a400 300f Q
or or
F J IJ = (0.0259) lnF 2 I
V = V lnG J ST = 5.39 x10
−2 2

a
HJ K t
n

ST
H 1.3x10 K −8
For I = 1 mA ,
A / cm

or F 400 I lnF 2 I
Va = 0.488 V Va = (0.0259 )
H 300 K H 5.39 x10 K −2

or
9.14 Va = 0.125 V
(a) From the figure, φ Bn = 0.68 V
For I = 10 mA ,
Then
F −φ IJ F 400 I lnLM 20 OP
J ST = A T expG
*

HV K
2 Bn
Va = (0.0259 )
H 300 K N5.39 x10 Q −2

t or
F −0.68 I Va = 0.204 V
= (120)(300) exp
H 0.0259 K
2

For I = 100 mA ,
or
F 400 I lnF 200 I
J ST = 4.28 x10
−5
A / cm
2

−3
Va = (0.0259 )
H 300 K H 5.39 x10 K −2

−3 10 or
For I = 10 A ⇒ Jn = = 2 A / cm
2

5 x10
−4 Va = 0.284 V
We have

Va = Vt ln
FG J IJ n
9.15
HJ K (a) From the figure, φ Bn = 0.86 V

F 2 I
ST
FG −φ IJ
J ST = A T exp
HV K
* 2 Bn
= (0.0259 ) ln
H 4.28x10 K −5
t

or F −0.86 I
= (112
. )(300) exp
H 0.0259 K
2

Va = 0.278 V

For I = 10 mA ⇒ J n = 20 A / cm
2 or
−10
J ST = 3.83 x10
2
And A / cm
20 F I Now
FG V IJ
Va = (0.0259 ) ln
4.28 x10
−5
H K J n = J ST exp
HV K
a

or t

Va = 0.338 V
and we can write, for J n = 5 A / cm
2

For I = 100 mA ⇒ J n = 200 A / cm

2
FG J IJ
Va = Vt ln
HJ K
n
And
200 F I ST

F 5 I
Va = (0.0259 ) ln
4.28 x10
−5
H K = (0.0259 ) ln
H 3.83x10 K −10
or
Va = 0.398 V or
Va = 0.603 V
(b)
For T = 400 K , φ Bn = 0.68 V

128
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

eN d xd
(b) Ε max =
∈
For J n = 10 A / cm
b1.6x10 gb10 gb0.566x10 g
2
−19 16 −4

F 10 I = 0.621 V =
(11.7)b8.85x10 g
Va = (0.0259 ) ln
H 3.83x10 K −10

or
−14

so
Ε max = 8.75 x10 V / cm
4
∆Va = 0.621 − 0.603 ⇒
∆Va = 18 mV Now
Lb1.6x10 gb8.75x10 g OP
∆φ = M
−19 4
1/ 2

9.16
Computer Plot
N 4π (11.7)b8.85x10 g Q −14

or
∆φ = 0.0328 V
9.17
Then
From the figure, φ Bn = 0.86 V
F −φ IJ expFG ∆φ IJ F 0.0328 I
H 0.0259 K
−5
J R1 = 4.28 x10 exp
= A T expG
H V K HV K
* 2 Bn
J ST
t t or

F −0.68 I expFG ∆φ IJ J R1 = 1.52 x10

−4
A / cm
2

= (120)(300) exp
H 0.0259 K H V K
2
−4
For A = 10 cm , then
2

t
−8
or I R1 = 152
. x10 A

= 4.28 x10 expG

F ∆φ IJ (b)
HV K
−5
J ST
For VR = 4 V ,

L 2(11.7)b8.85x10 g(4.474) OP
t
1/ 2
We have −14

=M
N b1.6x10 gb10 g Q
eΕ xd −19 16
∆φ =
4π ∈ or
Now x d = 0.761 µm
φ = V lnG
F N IJ b1.6x10 gb10 gb0.761x10 g
−19 −4

HN K
C 16

(11.7)b8.85x10 g
n t
d
Ε max = −14

F 2.8x10 IJ = 0.206 V
= ( 0.0259 ) lnG
19
or
H 10 K 16
Ε max = 118
. x10 V / cm
5

and and

(a)
Vbi = φ Bn − φ n = 0.68 − 0.206 = 0.474 V
L b1.6x10 gb118. x10 g OP
∆φ = M
−19 5 1/ 2

We find for VR = 2 V , N 4π (11.7)b8.85x10 g Q −14

xd =
LM 2 ∈aV + V f OP
bi R
1/ 2 or
∆φ = 0.0381 V
N eN Q Now
F 0.0381I
d

=M
L 2(11.7)b8.85x10 g(2.474) OP −14
1/ 2
J R 2 = 4.28 x10 exp
−5

H 0.0259 K
N b1.6x10 gb10 g Q −19 16

or
or −4
J R 2 = 186
2
. x10 A / cm
x d = 0.566 µm
Finally,
Then −8
I R 2 = 1.86 x10 A

129
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

F m I F −eφ I
= 2G J exp
* 3

H h K H kT K
− n n
J s→ m
9.18
We have that
F −m v IJ dv
× z v expG
∞ * 2

z H 2kT K
∞ n x
−
J s→ m =
x x
v x dn vOx
EC

The incremental electron concentration is given

+∞
F −m v IJdv × z expFG −m v IJ dv
× z expG
* 2 +∞ * 2

H 2kT K
z

H 2kT K
n y n

by y z
−∞ −∞
dn = g C ( E ) f F ( E )dE
We can write that
We have
4π 2 mn b g * 3/ 2
1 * 2
2
mn vOx = e Vbi − Va a f
gC ( E ) = E − EC
h
3
Make a change of variables:
and, assuming the Boltzmann approximation mn v x
* 2
a
e Vbi − Va f
f F ( E ) = exp
− E − EF LM a fO
PQ 2 kT
=α +
2

kT
kT N or
Then LMα + eaV − V f OP
2 kT
b g m N
vx =
Q
2 2

LM −a E − E f OPdE
bi a
3/ 2
4π 2 mn
* *
kT
N kT Q
n
dn = E − E C ⋅ exp F

h
3 Taking the differential, we find
If the energy above E C is kinetic energy, then
v dv = G
F 2kT IJ αdα
1
mn v = E − E C
* 2
x
Hm K x *
n

2 We may note that when v x = vOx , α = 0 .

We can then write Other change of variables:
mn
*
mn v y
* 2
F 2kT IJ
⇒v =G
1/ 2

E − EC = v =β
Hm K ⋅β
2
y *
2 2 kT n
and
1 mn v z
* 2
F 2kT IJ
⇒v =G
1/ 2

=γ ⋅γ
Hm K
2

dE = mn ⋅ 2 vdv = mn vdv
* *
z *

2 2 kT n

We can also write Substituting the new variables, we have

a
E − E F = E − EC + EC − E F fa f F m I F 2kT IJ expF −eφ I
= 2G J ⋅ G
* 3 2

H h K H m K H kT K
− n n
J s→ m
1 *

= mn v + eφ n
* 2
n

2
LM −eaV − V f OP ⋅ z α expb−α gdα ∞

× exp
N kT Q
bi a 2
so that
F m I F −eφ I ⋅ expFG −m v IJ ⋅ 4πv dv
dn = 2G J exp
* 3 * 2 0

H h K H kT K H 2kT K × z expb − β gdβ ⋅ z expb −γ gdγ

n n n 2
+∞ +∞
2 2

We can write −∞ −∞

v = v x + v y + vz
2 2 2 2

9.19
The differential volume element is For the Schottky diode,
4πv dv = dv x dv y dv z
2
−8 −4
J ST = 3 x10 A / cm , A = 5 x10 cm
2 2

The current is due to all x-directed velocities that For I = 1 mA ,

are greater than vOx and for all y- and z-directed −3
10
velocities. Then J= = 2 A / cm
2
−4
5 x10
We have

130
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

FG J IJ FG V IJ
HJ K HV K
apn
Va = Vt ln I PN = I S exp (pn junction diode)
ST t

F 2 I We have I S + I PN = 0.5x10
−3
A , Vas = Vapn
= (0.0259 ) ln
H 3x10 K −8
Then
or
Va = 0.467 V (Schottky diode)
−3
a
0.5 x10 = I ST + I S exp f FGH VV IJK a

t
−12
For the pn junction, J S = 3 x10 A / cm
2
or
Then
F I V = V lnG
F 0.5x10 −3
IJ
Va = (0.0259 ) ln
2
H K
a
H I +I
t
S ST
K
F 0.5x10 IJ = 0.239 V
−12
3 x10
= (0.0259 ) lnG
−3
or
Va = 0.705 V (pn junction diode) H 5x10 + 10 K −8 −12

Now
9.20 F 0.239 I
H 0.0259 K
−8
I = 5 x10 exp
For the pn junction diode, S

−12 −4
J S = 5 x10 A / cm , A = 8 x10 cm
2 2
or
For I = 1.2 mA , I S ≈ 0.5 x10
−3
A (Schottky diode)
−3
1.2 x10 and
J= = 15
FG 0.239 IJ
2
−4
. A / cm
8 x10 −12
Then
I PN = 10 exp
H 0.0259 K
FG J IJ or
Va = Vt ln
HJ K S
I PN = 1.02 x10
−8
A (pn junction diode)

F 15. I = 0.684 V (b) Diodes in Series:

= (0.0259 ) ln
H 5x10 K −12 We obtain,
F 0.5x10 IJ
= (0.0259 ) lnG
−3
For the Schottky diode, the applied voltage will
be less, so
Vas
H 5x10 K −8

Va = 0.684 − 0.265 = 0.419 V or

We have Vas = 0.239 V (Schottky diode)
FV I
expG J
and
I = AJ ST
HV K
a

Vapn = ( 0.0259 ) ln
FG 0.5x10 IJ −3

H 10 K
t

so −12

−3
1.2 x10 = A 7 x10 b −8
g expFH 00.0259
.419 I
K or
Vapn = 0.519 V (pn junction diode)
which yields
−3
A = 1.62 x10 cm
2

9.22
(a) For I = 0.8 mA , we find
9.21 0.8 x10
−3

(a) Diodes in parallel: J= = 114

. A / cm
2
−4
We can write 7 x10
FG V IJ We have
FG J IJ
I S = I ST exp
HV K
as
(Schottky diode)

and
t Va = Vt ln
HJ K S

For the pn junction diode,

131
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

F 114. I J ST (400)
Va = (0.0259 ) ln
H 3x10 K = 4.85x10
3

J ST (300)
−12

or and so
Va = 0.691 V
For the Schottky diode,
I = 7 x10 b −4
gb4.85x10 gb4 x10 g expFH 0.003453
3 .445 I
K
−8

114
. F I or
Va = (0.0259 ) ln
4 x10 H
−8
K I = 53.7 mA
or
Va = 0.445 V 9.23
(b) Computer Plot
For the pn junction diode,
F T I expFG − E IJ
3 9.24

H 300 K H kT K We have
g
J S ∝ ni ∝
2

F kT I ⋅ expF eφ I
Then
J S (400) RC =
H e K H kT K Bn

* 2
AT
J S (300) which can be rewritten as
F 400I expLM − E
3
E O LM R A T OP = eφ * 2

H 300K N (0.0259)a400 300f 0.0259 PQ N akT ef Q kT

C Bn
= +
g g
ln

or so
LM 112. − 112. OP F kT I ⋅ lnLM R A T OP * 2

= 2.37 exp
N 0.0259 0.03453 Q φ = Bn
H e K N akT ef Q C

We find
J S (400)
L b10 g(120)(300) OP
= (0.0259 ) ln M
−5 2

= 116
N 0.0259 Q
5
. x10
J S (300)
Now or

gb116. x10 gb3x10 g expFH 0.003453

.691 I φ Bn = 0.216 V
b
I = 7 x10
−4 5

K
−12

or 9.25
I = 120 mA (b) We need φ n = φ m − χ s = 4.2 − 4.0 = 0.20 V
For the Schottky diode And
− eφ BOF I FG N IJ
H K φ n = Vt ln
HN K
C
J ST ∝ T exp
2

kT d

Now or
J ST (400)
0.20 = (0.0259 ) ln
FG 2.8x10 IJ 19

J ST (300) H N K
F 400I expLM −φ OP
d
2
φ which yields
=
H 300K N (0.0259)a400 300f 0.0259 Q
+ BO BO

N d = 1.24 x10 cm
16 −3

or (c)
LM 0.82 − 0.82 OP Barrier height = 0.20 V
= 1.78 exp
N 0.0259 0.03453 Q
We obtain

132
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

9.26
We have that 9.27

Ε=
− eN d
xn − x a f FG N IJ
(b) φ BO = φ p = Vt ln
HN K
V

∈
a
Then
FG x ⋅ x − x IJ + C = (0.0259 ) lnG
F 1.04 x10 IJ ⇒
19

z H 5x10 K
2
eN d
∈ H 2K
φ = − Εdx = n 2
16

φ BO = 0.138 V
Let φ = 0 at x = 0 ⇒ C2 = 0
So
FG x ⋅ x − x IJ
eN d
2 9.28

∈ H 2K
φ= Sketches
n

9.29
At x = x n , φ = Vbi , so
Sketches
2
eN d xn
φ = Vbi = ⋅
∈ 2 9.30
or Electron affinity rule

2 ∈Vbi b
∆E C = e χ n − χ p g
xn = For GaAs, χ = 4.07 ; and for AlAs, χ = 3.5 ,
eN d
If we assume a linear extrapolation between
Also GaAs and AlAs, then for
Vbi = φ BO − φ n Al0. 3 Ga0 . 7 As ⇒ χ = 3.90
where Then
FG N IJ E C = 4.07 − 3.90 ⇒
φ n = Vt ln
HN K
C

d E C = 0.17 eV
For
φ BO 0.70 9.31
φ= = = 0.35 V
2 2 Consider an n-P heterojunction in thermal
we have equilibrium. Poisson’s equation is
b1.6x10 g N x b50x10 g −19
d −8
d φ
2

=−
ρ( x)
=−
dΕ
(11.7)b8.85x10 g
0.35 =
∈
2
−14 n
dx dx

b50x10 g OP 2
In the n-region,
ρ( x ) eN dn
−8
dΕ n
− = =
2 PQ dx ∈n ∈n
For uniform doping, we have
or
0.35 = 7.73x10 N b x − 25x10 g eN dn x
−14 −8
d n Εn = + C1
We have ∈n

x =M
L 2(11.7)b8.85x10 gV OP −14
bi
1/ 2 The boundary condition is
Ε n = 0 at x = − x n , so we obtain
n
N b1.6x10 g N Q −19
d
C1 =
eN dn xn
and
∈n
Vbi = 0.70 − φ n
Then
By trial and error,
N d = 3.5 x10 cm
18 −3
Εn =
∈n
eN dn
x + xn a f
In the P-region,

133
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 9
Solutions Manual Problem Solutions

dΕ P eN aP Similarly on the P-side, we find

=− 2
dx ∈P eN aP x p
VbiP =
which gives 2 ∈P
eN x We have that
Ε P = − aP + C2 2 2
∈P eN dn xn eN aP x P
Vbi = Vbin + VbiP = +
We have the boundary condition that 2 ∈n 2 ∈P
Ε P = 0 at x = x P so that We can write

C2 =
eN aP x P FG N IJ
x P = xn
HN K
dn

∈P
aP
Then Substituting and collecting terms, we find
ΕP =
eN aP
a x − xf V =M
L e ∈ N N + e ∈ N OP ⋅ x
P dn aP n
2
dn 2

N 2∈∈ N Q
P
∈P bi n
n P aP
Assuming zero surface charge density at x = 0 ,
Solving for x , we have
the electric flux density D is continuous, so n

∈n Ε n (0) =∈P Ε P (0)

x =M
L 2 ∈ ∈ N V OP 1/ 2

N eN a∈ N + ∈ N f Q
n P aP bi
which yields n

N dn xn = N aP x P
dn P aP n dn

Similarly on the P-side, we have

We can determine the electric potential as
z
φ n ( x ) = − Ε n dx x =M
L 2 ∈ ∈ N V OP 1/ 2

N eN a∈ N + ∈ N f Q
n P dn bi
P

= −M
L eN x + eN x x OP + C
dn
2
dn n
aP P

The total space charge width is then

aP n dn

N 2∈ ∈ Q n n
3
W = xn + x P
Now Substituting and collecting terms, we obtain
Vbin = φ ( 0) − φ a − x f L 2 ∈ ∈ V a N + N f OP 1/ 2

W=M
L eN x + eN x OP
n n n

N eN N a∈ N + ∈ N f Q
n P bi aP dn
2 2

= C − MC − dn n dn n

N 2∈ ∈ Q
dn aP n dn P aP
3 3
n n

or
2
eN n x n
Vbin =
2 ∈n

134
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

Chapter 10
i E = 17.64 mA
Problem Solutions
10.1 10.5
Sketch iC 510
(a) β = = ⇒ β = 85
iB 6
10.2
Sketch β 85
α= = ⇒ α = 0.9884
1+ β 86
10.3
i E = iC + i B = 510 + 6 ⇒ i E = 516 µA
eDn ABE n BO
(a) IS = (b)
xB
2.65

=
b 1.6 x10
−19
g b gb g
(20) 10 −4 104 β=
0.05
⇒ β = 53
−4
10 53
−14
α= ⇒ α = 0.9815
or I S = 3.2 x10 A 54
(b) i E = 2.65 + 0.05 ⇒ i E = 2.70 mA
F 0.5 I ⇒
H 0.0259 K
−14
(i) iC = 3.2 x10 exp
10.6
iC = 7.75 µA (c) For i B = 0.05 mA ,
iC = βi B = (100)(0.05) ⇒ iC = 5 mA
F 0.6 I ⇒
H 0.0259 K
−14
(ii) iC = 3.2 x10 exp We have
vCE = VCC − iC R = 10 − (5)(1)
iC = 0.368 mA
or
F 0.7 I ⇒ vCE = 5 V
H 0.0259 K
−14
(iii) iC = 3.2 x10 exp

iC = 17.5 mA 10.7
(b) VCC = I C R + VCB + VBE
10.4 so
α 0.9920 10 = I C (2 ) + 0 + 0.6
(a) β = = ⇒ β = 124 or
1 − α 1 − 0.9920
(b) From 10.3b I C = 4.7 mA
i 7.75
(i) For iC = 7.75 µA ; i B = C = ⇒ 10.8
β 124
(a)
i B = 0.0625 µA ,

F 1 + β IJ ⋅ i = F 125 I (7.75) ⇒ n pO =
ni
2

=
b15. x10 g 10 2

= 2.25 x10 cm
4 −3

=G
H β K H 124 K
16
iE C
NB 10
At x = 0 ,
i E = 7.81 µA
FG V IJ
n p (0) = n pO exp
HV K
BE
(ii) For iC = 0.368 mA , i B = 2.97 µA ,
t

i E = 0.371 mA or we can write

(iii) For iC = 17.5 mA , i B = 0.141 mA ,
V = V lnG
F n (0)IJ
Hn K
p
BE t
pO

139
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

We want n P (0) = 10% × 10 = 10 cm ,

16 15 −3 or
So x p 2 = 0.118 µm

VBE = (0.0259) ln
FG 10 IJ 15 Now

H 2.25x10 K 4

or
x B = x BO − x p1 − x p 2 = 110
. − 0.207 − 0.118

or
x B = 0.775 µm
VBE = 0.635 V
(b)
10.9
At x ′ = 0 ,

p (0) = p expG
F V IJ (a) p EO =
ni
2

=
b1.5x10 g 10 2

⇒
HV K
BE
17
n nO
NE 5 x10
t
−3
where p EO = 4.5 x10 cm
2

p =
n
=
b1.5x10 g
2
i
10 2

= 2.25 x10 cm
3 −3
ni
2
b1.5x10 g 10 2

nO
NE 10
17 n BO = = 16
⇒
NB 10
Then
F 0.635 I ⇒ n BO = 2.25 x10 cm
4 −3

p (0) = 2.25 x10 exp

H 0.0259 K
3
n

pCO =
ni
2

=
b15. x10 g 10 2

⇒
pn (0) = 10 cm
14 −3
15
NC 10
(c) −3
pCO = 2.25 x10 cm
5

From the B-C space charge region,

x =M
L 2 ∈aV + V f FG N IJ FG 1 IJ OP 1/ 2 (b)
FG V IJ
N e H N KH N + N KQ
bi R1 C

n B (0) = n BO exp
HV K
p1 BE
B C B

We find t

L b10 gb10 g OP = 0.635 V = b 2.25 x10 g exp

F 0.625 I
V = (0.0259 ) ln M H 0.0259 K
16 15 4

bi1
MN b1.5x10 g PQ 10 2

or
Then n B (0) = 6.80 x10 cm
14 −3

x =M
L 2(11.7)b8.85x10 g(0.635 + 3) −14
Also
p1
N 1.6 x10
−19

p E (0) = p EO exp
FG V IJ
HV K
BE

×G
F 10 IJ F 1 I OP 15 1/ 2
t

H 10 K H 10 + 10 K Q = b4.5 x10 g exp

F 0.625 I
H 0.0259 K
16 15 16
2

or
x p1 = 0.207 µm or
p E (0) = 1.36 x10 cm
13 −3
We find
Lb10 gb10 g OP = 0.754 V
V = ( 0.0259 ) ln M
17 16

10.10
bi 2
MN b15. x10 g PQ 10 2

ni
2
b1.5x10 g 10 2

Then (a) n EO = = ⇒
L 2(11.7)b8.85x10 g(0.754 − 0.635)
18
−14 NE 10
x =M −3

N n EO = 2.25 x10 cm
2
p2 −19
1.6 x10

F 10 IJ F 1 I OP 1/ 2
ni
2
b15. x10 g 10 2

×G
17
p BO = = ⇒
H 10 K H 10 + 10 K Q 16 17 16 NB 5 x10
16

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
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p BO = 4.5 x10 cm
3 −3
a f ax f
d δn B

b1.5x10 g
B
dx
d aδn f
10 2
2
ni
nCO = = 15
⇒ ( 0)B
NC 10 dx
nCO = 2.25 x10 cm
5 −3
LMexpFG V IJ − 1OP + coshFG x IJ
N HV K Q HL K
BE B

(b)

p (0) = p expG
F V IJ =
LMexpFG V IJ − 1OP coshFG x IJ + 1
t B

HV K N HV K Q HL K
EB BE B
B BO
t

F 0.650 I
t B

= b 4.5 x10 g exp

1
H 0.0259 K
3
≈
Fx I
cosh G J
HL K
B
or
p B (0) = 3.57 x10 cm
14 −3 B

xB
Also (a) For = 0.1 ⇒ Ratio = 0.9950

n E (0) = n EO exp
FG V IJ LB

HV K
EB
xB
t (b) For = 1.0 ⇒ Ratio = 0.648

= b 2.25 x10 g exp

F 0.650 I LB

H 0.0259 K
2
xB −5
(c) For = 10 ⇒ Ratio = 9.08 x10
or LB
n E (0) = 1.78 x10 cm
13 −3

10.12
In the base of the transistor, we have
10.11
We have DB
2
a
d δn B ( x ) f − δn ( x) = 0 B

a f=
d δn B RSLMexpFG V IJ − 1OP
n BO dx
2
τ BO
F x I TN H V K Q
BE
or
sinhG J a
dx
HL K
B

B
t
d δn B ( x )
2
f − δn ( x) = 0
B

F −1 I F x − x IJ − 1 coshFG x IJ UV
2 2
dx LB
× G J coshG
H L K H L K L H L KW
B
where LB = DBτ BO
B B B B

At x = 0 , The general solution to the differential equation

d aδn f RSLMexpFG V IJ − 1OP is of the form,
(0) =
B
−n
F x I TN H V K Q
BO BE

δn B ( x ) = A exp
FG x IJ + B expFG − x IJ
dx
L sinh G J
HL K B
B t
HL K HL K B B
B
From the boundary conditions, we have
Fx I U
× coshG J + 1V
δn B ( 0) = A + B = n B ( 0) − n BO
HL K W
B

LM FG V IJ − 1OP
N HV K Q
B
= n BO exp BE

At x = x ,
d aδn f
B t

a
B
x f=
−n
Fx I
BO Also
F x I F − x IJ = −n
L sinhG J δn a x f = A expG J + B expG
B
dx
HL K HL K H L K
B B B
B B B BO
B B B

RL F V IJ − 1OP + coshFG x IJ UV
× S MexpG
From the first boundary condition, we can write

TN H V K Q H L K W
BE B
L F V IJ − 1OP − B
A = n MexpG
N HV K Q
BE
t B
BO
Taking the ratio, t

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Substituting into the second boundary condition LM FG V IJ − 1OP ⋅ expFG x IJ + p

N HV K Q HL K
EB B
equation, we find p BO exp
L F x I F − x IJ OP
BO

B MexpG J − expG Fx I
B= t B

N H L K H L KQ
B B

2 sinhG J
HL K
B
B B

L F V IJ − 1OP ⋅ expFG x IJ + n
= n MexpG and then we obtain
B

N HV K Q HL K
BE B
BO
t B
BO
L F V IJ − 1OP ⋅ expFG − x IJ − p
− p MexpG
N HV K Q H L K
EB B
which can be written as BO BO

L F V IJ − 1OP ⋅ expFG x IJ + n
n MexpG
A=
Fx I
t B

N HV K Q HL K 2 sinh G J
BE B

HL K
BO BO B

B=
Fx I
t B
B

2 sinh G J Substituting the expressions for A and B into the

HL K
B

B
general solution and collecting terms, we obtain
We then find
δp B ( x ) = p BO
L F V IJ − 1OP ⋅ expFG − x IJ − n
− n MexpG R| LexpFG V IJ − 1O ⋅ sinhFG x − x IJ − sinhFG x IJ U|
N HV K Q H L K
BE B

| M H V K PQ H L K H L K |V
BO BO

×S N
EB B

A=
Fx I
t B

2 sinhG J Fx I
t B B

HL K || ||
B

sinhG J
H K
B
B

T L B W
10.13
In the base of the pnp transistor, we have

DB
2
a
d δp B ( x ) f − δp ( x) = 0 B
10.14
For the idealized straight line approximation, the
τ BO
2
dx total minority carrier concentration is given by
or LM FG V IJ OP ⋅ FG x − x IJ
a
d δp B ( x )
2

2
f − δp ( x) = 0
B
2
n B ( x ) = n BO exp
N H V KQ H x K
BE

t
B

dx LB The excess concentration is

δn B = n B ( x ) − nBO
where LB = DBτ BO
so for the idealized case, we can write
The general solution is of the form
F x I F −xI δn BO ( x ) = n BO
RSLMexpFG V IJ OP ⋅ FG x − x IJ − 1UV
δp ( x ) = A expG J + B expG J TN H V K Q H x K W
BE B

B
HL K HL K B B
1
t B

From the boundary conditions, we can write At x = x B , we have

δp B (0) = A + B = p B (0) − p BO 2

LM FG V IJ − 1OP F 1 x I = n RS 1 LMexpFG V IJ OP − 1UV

N HV K Q = p BO exp EB

t
δn BO
H 2 K T2 N H V K Q W
B BO
BE

Also For the actual case, we have

F x I F − x IJ = − p
δp a x f = A expG J + B expG
F1 x I =n
B B
HL K H L K
B B
BO
δn B
H2 K B BO

B B
R| LexpFG V IJ − 1O ⋅ sinhFG x IJ − sinhFG x IJ U|
| M H V K PQ H 2 L K H 2 L K |V
From the first boundary condition equation, we

×S N
BE B B

find
LMexpFG V IJ − 1OP − B ||
t

Fx I
sinhG J ||
B B

A = p BO
N HV K Q
EB

H K
B

Substituting into the second boundary equation

T L B W

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

F 1 x I − δn F 1 x I
(a) For
xB
= 0.1 , we have H2 K H2 K
δnBO B B B

LB F1 x I
FG x IJ = 0.0500208 δn
H2 K BO B

H 2L K LMexpFG V IJ OP(0.50 − 0.4434) − 1.0 + 0.8868

B
sinh

N H V KQ
B BE

and
Fx I =
F V IJ − 1
t

sinhG J = 0.100167 expG

1
HL K HV K
B BE

B 2 t

Then which becomes

F 1 x I − δn F 1 x I FV I
(0.0566) expG J − (0.1132)
δn BO
H2 K H2 K B B B
HV K
BE

F1 x I F V IJ − 1
t

δn
H2 KBO B
1
2
expG
HV K
BE

LMexpFG V IJ OP ⋅ (0.50 − 0.49937) − 1.0 + 0.99875 F V IJ >> 1

t

N H V KQ Assuming that expG

BE

HV K
BE

=
F V IJ − 1
t

expG
t
1
HV K Then the ratio is
BE

2 t 0.0566
which becomes = = 0.1132 ⇒ 11.32%
FV I
(0.00063) expG J − (0.00125)
0.50

HV K
BE

10.15
=
F V IJ − 1
t
The excess hole concentration at x = 0 is
expG LM FG V IJ − 1OP = 8x10
1
HV K
BE

δp B ( 0) = p BO exp
N HV K Q
−3
2 t
EB 14
cm

If we assume that expG

F V IJ >> 1 , then we find t

HV K
BE
and the excess hole concentration at x = x B is

that the ratio is

t
a f
δp B x B = − pBO = −2.25x10 cm
4 −3

0.00063 From the results of problem 10.13, we can write

= 0.00126 ⇒ 0.126%
0.50 δp( x ) = p BO
(b)
R| LexpFG V IJ − 1O ⋅ sinhFG x − x IJ − sinhFG x IJ U|
| M H V K PQ H L K H L K |V
x

×S N
EB B
For B = 1.0 , we have
LB
Fx I
t B B

FG x IJ = 0.5211 || sinhG J
H K ||
B

sinh
H 2L K
B

B
T L BW
or
and
δp B ( x ) =
Fx I .
sinhG J = 11752
HL K b8x10 g sinhFGH x L− x IJK − b2.25x10 g sinhFGH Lx IJK
B
14 B 4
B

Then
Fx I
B B

sinhG J
HL K
B

Let x B = LB = 10 µm , so that

143
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

FG x IJ = 11752 a f
J xB = lb8x10 g cosh(0)
− eDB 14

HL K .
B
sinh
L sinh(1) B

+b2.25x10 g cosh(1)q
B

Then, we can find δp B ( x ) for (a) the ideal linear

4

approximation and for (b) the actual distribution or

−b1.6 x10 g(10)
as follow: −19

(a ) δp B (b) δpB
x =
b10x10 g(1175 . )
−4

× b8 x10 g(1) + b2.25x10 g(1543

14 14
0 8 x10 8 x10 . )
14 4

0.25 LB 6 x10
14
5.6 x10
14
We obtain
J a x f = −1.089 A / cm
14 14 2
0.50 LB 4 x10 3.55x10 B
14 14
0.75 LB 2 x10 1.72 x10 Then
1.0 LB −2.25x10
4
−2.25x10
4 J a x f −1.089 Jax f
= B
⇒ = 0.648 B

J ( 0) −1.68 J (0)
(c)
For the ideal case when x B << LB , then
a f
J (0) = J x B , so that
10.16
(a) npn transistor biased in saturation
Jax f a
d δn B ( x ) f − δn ( x) = 0
2

=1
B
DB B

J (0) τ BO
2
dx
For the case when x B = LB = 10 µm or

F x − x IJ a
d δn B ( x )
2
f − δn ( x) = 0
J ( 0) =
eDB
F x I dx l b 8 x10 g sinhG
d
H L K
14 B
dx
2
LB
B
2

sinhG J
HL K
B B

where LB = DBτ BO
B

F x IU
−b2.25 x10 g sinh G J V
The general solution is of the form
FG x IJ + B expFG − x IJ
H L KW
4

δn B ( x ) = A exp
or
B x =0
HL K HL K B B

eD R −1 F x − x IJ If x << L , then also x << L so that

J ( 0) = S B

sinh(1) T L
b8 x10 g cosh G
H L K
14 B
B B

F x IJ + BFG1 − x IJ
B

δn ( x ) ≈ AG 1 +
B

F x IU
B
B
H LK H LK
−
1
b 2.25 x10 g cosh G J V
H L KW
4

F xI
B B

L = ( A + B ) + ( A − B )G J
HL K
B B x =0
which becomes B

⋅ lb8 x10 g cosh(1)

− eD which can be written as
=
F xI
B 14

L sinh(1)
δn ( x ) = C + DG J
HL K
B

+b2.25x10 g cosh(0)q
B
4
B

We find The boundary conditions are

−b1.6 x10 g(10)

−19
δn (0) = C = n MexpG
L F V IJ − 1OP
N HV K Q
BE

J ( 0) =
b10x10 g(1175
B BO

. )
−4
t

× b8 x10 g(1543 . ) + b2.25x10 g(1)

and
14 4

F x I L F V IJ − 1OP
δn a x f = C + DG J = n MexpG
HL K N HV K Q
B BC
or B B BO

J (0) = −1.68 A / cm
2 B t

Then the coefficient D can be written as

Now

144
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

F L I L F V IJ − 1OP LMexpFG V IJ − expFG V IJ OP

eDB p BO
JP =
N H V K H V KQ
EB CB

D = G J m n MexpG
Hx K N HV K Q x
B BC
BO B t t

B t We have
L F V IJ − 1OPUV
− n MexpG n b15. x10 g = 2.25x10 cm
2 10 2

N H V K QW
BE −3
p = = i 3
BO
BO 17
t NB 10
The excess electron concentration is then given Then
by
RSLMexpFG V IJ − 1OP ⋅ FG1 − x IJ 165 =
b1.6x10 g(10)b2.25x10 g−19 3

δn B ( x ) = n BO
TN H V K Q H L K
BE −4
0.7 x10
t B
L F 0.75 I − expFG V IJ OP
× Mexp
L F V IJ − 1OP ⋅ FG x IJ UV
+ MexpG N H 0.0259 K H V K Q
CB

N H V K Q H x KW
BC
t

or
F V IJ
t B

3.208 x10 = 3.768 x10 − expG

(b)
HV K
12 12 CB
The electron diffusion current density is
a f
J n = eDB
d δn B ( x )
which yields
t

V = (0.0259) lnb0.56 x10 g ⇒

dx 12

RL F V IJ − 1OP ⋅ FG −1IJ
= eD n S MexpG
CB

TN H V K Q H x K VCB = 0.70 V
BE
B BO
t B
(b)
L F V IJ − 1OP ⋅ FG 1 IJ UV
+ MexpG
VEC ( sat ) = VEB − VCB = 0.75 − 0.70 ⇒
N H V K Q H x KW
BC

t B
VEC ( sat ) = 0.05 V
or (c)
eD n R F V I F V IJ UV Again, extending the results of problem 10.16 to
S expG J − expG
J =−
T H V K H V KW
B BO BE BC
a pnp transistor, we can write
RSLMexpFG V IJ − 1OP + LMexpFG V IJ − 1OPUV
n
x B t t
epBO x B
Q pB =
TN H V K Q N H V K Q W
EB CB
(c)
The total excess charge in the base region is 2 t t

z
xB
QnB = − e δn B ( x )dx =
b1.6x10 −19
gb2.25x10 gb0.7 x10 g 3 −4

0 2
RL F V IJ − 1OP ⋅ FG x − x IJ
= − en S MexpG
2
× 3.768 x10 + 0.56 x10
12 12

TN H V K Q H 2 x K
BE
BO
or
t B

L F V IJ − 1OP ⋅ FG x IJ UV
−8
QpB = 5.45x10 C / cm
2

+ MexpG
2 xB

N H V K Q H 2x K W
BC
or
0
t B
Q pB
= 3.41x10 holes / cm
11 2
which yields
− en x R L F V I O
e
Q =
nB
2
STMNexpGH V JK − 1PQ
BO B BE
(d)
In the collector, we have
LM FG V IJ − 1OP ⋅ expFG − x IJ
t

L F V IJ − 1OPUV
+ MexpG δn p ( x ) = n PO exp
N HV K Q HL K
CB

N H V K QW
BC

t C
t
The total number of excess electrons in the
collector is
10.17
(a) Extending the results of problem 10.16 to a
pnp transistor, we can write

145
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

z
∞

N Coll = δn P ( x )dx
x p1 =
RS 2(11.7)b8.85x10 g(0.745 − 0.565)
−14

T
0

L F V IJ − 1OP ⋅ expFG − x IJ
−19
1.6 x10
= − n L MexpG
∞

N HV K Q HL K F 7 x10 IJ F 1 I UV
CB
1/ 2

×G
PO C 15

H 10 K H 7 x10 + 10 K W
t C 0

L F V IJ − 1OP
= n L MexpG
17 15 17

N HV K Q
CB
PO C or
t −6

We have
x p1 = 1.23x10 cm

n = PO
n
=
b1.5x10 g = 4.5x10 cm
2
i
10 2

4 −3
From the B-E space-charge region,
LMb10 gb10 g OP = 0.933 V
19 17

Vbi 2 = ( 0.0259 ) ln
15
NC 5 x10
Then the total number of electrons is MN b15. x10 g PQ 10 2

N Coll = 4.5x10 b 4
gb35x10 gb0.56x10 g −4 12
Then
or R 2(11.7)b8.85x10 g(0.933 + 2)
x =S
−14

N Coll = 8.82 x10 electrons / cm

13 2
Tp2
1.6 x10
−19

×G
F 10 IJ F 1 I UV 19 1/ 2

10.18
ni
2
b1.5x10 g 10 2 H 10 K H 10 + 10 K W 17 19 17

(b) n BO = = = 2.25 x10 cm

3 −3
or
17
NB 10 x p 2 = 1.94 x10 cm
−5

and
Now

pCO =
ni
2

=
b15. x10 g 10 2

= 3.21x10 cm
4 −3 x B = x BO − x p1 − x p 2 = 1.20 − 0.0123 − 0.194
NC 7 x10
15
or
At x = x B , x B = 0.994 µm

a f FG V IJ
n B x B = n BO exp
HV K
BC
10.19
t Low injection limit is reached when

= b 2.25 x10 g exp

F 0.565 I pC (0) = (0.10) N C , so that
H 0.0259 K b g = 5x10 cm
3

pC (0) = (0.10) 5x10

14 13 −3

or We have
a f
n B x B = 6.7 x10 cm
12 −3

ni
2
b15. x10 g = 4.5x10 cm
10 2

−3
pCO = =
5
At x ′′ = 0 ,
F V IJ
14
NC 5 x10
p (0) = p expG
HV K Also
BC
C CO
t
FG V IJ
= b3.21x10 g exp
F 0.565 I pC (0) = pCO exp
HV K
CB

H 0.0259 K
4
t

or
or
F p (0)IJ
= V lnG
pC (0) = 9.56 x10 cm
Hp K
C
13 −3
VCB t

(c) CO

From the B-C space-charge region,

= (0.0259 ) lnG
F 5x10 IJ 13

Vbi1
L b10 gb7 x10 g OP = 0.745 V
= (0.0259 ) ln M
17 15
H 4.5x10 K 5

MN b15. x10 g PQ 10 2
or
VCB = 0.48 V
Then

146
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

or
10.20 I C = 17.4 µA
(a)
(b)
J nC Base transport factor
α=
J nE + J R + J pE 1

=
118
.
⇒ α = 0.787
αT =
cosh x B LB a f
1.20 + 0.20 + 0.10 We find
(b)
J nE
LB = DBτ BO = b g
(20) 10 −7 = 1.41x10 −3 cm
γ = so that
J nE + J pE 1

=
1.20
⇒ γ = 0.923
αT =
cosh 1 14.1 a f
⇒ α T = 0.9975

1.20 + 0.10 Emitter injection efficiency

(c) Assuming DE = DB , x B = x E , and LE = LB ;
J nC 118
. then
αT = = ⇒ α T = 0.983
J nE 1.20 1 1
γ = = ⇒ γ = 0.909
(d) NB 10
17

1+ 1 + 18
J nE + J pE NE
δ = 10
J nE + J R + J pE Then
α = γα T δ = (0.909)(0.9975)(1) ⇒
1.20 + 0.10
= ⇒ δ = 0.867 α = 0.9067
1.20 + 0.20 + 0.10
and
(e)
α 0.9067
α 0.787 β= = ⇒ β = 9.72
β= = 1 − α 1 − 0.9067
1−α 1 − 0.787
or For I E = 15. mA ,
β = 3.69 I C = αI E = (0.9067 )(1.5) ⇒ I C = 1.36 mA
(c)
10.21 For I B = 2 µA ,

n BO =
ni
2

=
b1.5x10 g 10 2

= 2.25 x10 cm
3 −3
I C = βI B = (9.72 )(2 ) ⇒ I C = 19.4 µA
17
NB 10
Then 10.22

n B (0) = n BO exp
FG V IJ (a) We have
R| LMexpFG V IJ − 1OP U|
HV K
BE

eD n | N H V K Q |V
BE

S 1
t

= b 2.25 x10 g exp

F 0.50 I J = B

|| sinhFGH x IJK tanhFGH x IJK ||

BO
+ t

H 0.0259 K
nE
3
L B

T
B B

or
We find that
L B
L W B

n B (0) = 5.45x10 cm
b1.5x10 g = 4.5x10 cm
11 −3
10 2
2
n −3
As a good approximation, n = BO
=i 3
16
eDB An B ( 0) NB 5 x10
IC = and
xB
b1.6x10 g(20)b10 gb5.45x10 g
−19 −3 11 LB = DBτ BO = b g
(15) 5x10 −8 = 8.66 x10 −4 cm
= −4 Then
10

147
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

b1.6x10 g(15)b4.5x10 g
−19 3
F eV I
J nE =
8.66 x10
−4 H 2kT K
J R = J rO exp BE

R| F 0.60 I U| F 0.60 IJ
= b3 x10 g expG
H 0.0259 K V H 2(0.0259)K
−8
exp
×S
1

|T sinhFH 80..6670IK tanhFH 80..6670IK |W

+
or
−3
J R = 3.22 x10
2
A / cm
or (b)
J nE = 1.79 A / cm
2
Using the calculated currents, we find
We also have J nE 1.79
γ = = ⇒
LMexpFG V IJ − 1OP ⋅ 1
eDE p EO J nE + J pE 1.79 + 0.0425
J pE =
N H V K Q tanhFG x IJ
BE

L γ = 0.977
HL K
E t E

We find
E

Also J nC 1.78
αT = = ⇒ α T = 0.994

p EO =
n
=i
b1.5x10 g = 2.25x10 cm
2 10 2

2 −3
and
J nE 1.79
18
NE 10
J nE + J pE 1.79 + 0.0425
and δ = =
LE = DE τ EO = b g (8) 10 −8 = 2.83x10 −4 cm
or
J nE + J R + J pE 1.79 + 0.00322 + 0.0425

Then δ = 0.998

J pE =
b1.6x10 g(8)b2.25x10 g
−19 2
Then
2.83 x10
−4 α = γα T δ = (0.977 )(0.994 )(0.998) ⇒
LM F 0.60 I − 1OP ⋅ 1 α = 0.969

N H 0.0259 K Q tanhF 0.8 I

× exp Now
H 2.83K β=
α
=
0.969
1 − α 1 − 0.969
⇒ β = 31.3
or
J pE = 0.0425 A / cm
2

10.23
We can find 1 N B DE x B
R| LexpF 0.60 I − 1O U| (a) γ =
N B DE x B
≈ 1− ⋅ ⋅
N E DB x E
eD n | NM H 0.0259 K QP |V 1+ ⋅ ⋅
J nC =
L
B
S
B
BO
1

|| sinhFGH x IJK tanhFGH x IJK ||

+
or
N E DB x E

T
B

L W
B

L NB
B B γ ≈ 1− K ⋅

=
b1.6x10 g(15)b4.5x10 g
−19 3

(i)
NE
−4
8.66 x10
R| expF 0.60 I U| 1−
2 N BO
⋅K

×S
H K γ ( B) NE

|T sinhFH 8.66IK tanhFH 80.66.7 IK V|W

0.0259 1 =
+ γ ( A) N BO
0.7 1− ⋅K
NE
or FG 2 N BO IJ FG1 + N ⋅ KIJ
≈ 1−
H ⋅K
KH N K
BO

J nC = 1.78 A / cm
2
NE E

The recombination current is 2 N BO N BO

≈ 1− ⋅K+ ⋅K
NE NE

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
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2
ni
or J sO ∝ nBO =
γ ( B) N BO DE x B NB
≈ 1− ⋅ ⋅ so
γ ( A) N E DB x E
δ ( B) 2 N BO K N BO K N BO K
(ii) ≈ 1− + = 1−
δ ( A) C C C
γ (C )
=1 Then
γ ( A)
FG −V IJ
H 2V K
BE
(b) (i) J rO exp
δ ( B)
α T ( B) ≈ 1−
FG eD n IJ
t

=1 δ ( A)
α T ( A)
H x K
B BO

B
(ii)
FG1 − 1 ⋅ a x 2fIJ 2 (ii)
We find
α (C ) H K FG −V IJ
BO

2 L
=
H 2V K
T B BE
J rO exp
α ( A) FG1 − 1 ⋅ x IJ 2
δ (C )
H 2 LK ≈ 1+
FG eD n IJ
T BO t

δ ( A)
H x K
B B BO

FG1 − x IJ B

H 2 L K ≈ FG1 − x IJ FG1 + x IJ
BO
(d)
≈
FG1 − x IJ H 2 L K H L K Device C has the largest β . Base transport
B BO BO

H LK factor as well as the recombination factor

BO B B

B increases.
x BO x BO
≈ 1− + 10.24
2 LB LB (a)
or 1 1
α T (C ) x BO γ = =
≈ 1+ N B DE x B NB
1+ ⋅ ⋅ 1+ K ⋅
α T ( A) 2 LB N E DB x E NE
(c) Neglect any change in space charge width. or
Then NB
1 γ ≈ 1− K ⋅
δ =
J −VBE FG IJ (i) Then
NE
1 + rO ⋅ exp
J sO 2Vt H K NB
J rO F −V IJ
⋅ expG
γ ( B)
1− K ⋅
2 N EO
≈ 1−
H 2V K =
BE

J sO γ ( A) NB
t
1− K ⋅
(i) N EO
K FG NB IJ ⋅ FG1 + K ⋅ N IJ
δ ( B)
1−
J sOB F K IJ FG1 + K IJ
≈ G1 − H
≈ 1− K ⋅
2 N EO KH N K
B

δ ( A)
=
1−
K H J KH J K sOB sOA NB NB
EO

J sOA ≈ 1− K ⋅ + K⋅
2 N EO N EO
K K
≈ 1− + or
J sOB J sOA NB
Now = 1+ K ⋅
2 N EO
or

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

γ ( B) NB DE xB
= 1+ ⋅ ⋅ (i)
γ ( A) 2 N EO DB x E
k
(ii)
δ ( B)
1−
J SOB FG k IJ FG1 + k IJ
Now

γ =
1
≈ 1− K′ ⋅
xB δ ( A)
=
1−
k
≈ 1−
H J SOB KH J K SOA

xB xE J SOA
1 + K′ ⋅
xE k k
≈ 1− +
Then J SOB J SOA
xB Now
1− K′ ⋅
γ (C )
=
a x 2f
EO J SO ∝
1
γ ( A) xB N E xE
1− K′ ⋅
x EO so

FG 2 xB IJ ⋅ FG1 + K ′ ⋅ x IJ (i)

H
≈ 1− K′ ⋅
x EO KH x K
B

EO
δ ( B)
δ ( A)
a f a f
= 1 − k ′ 2 N EO + k ′ N EO

xB xB or
≈ 1 − 2K ′ ⋅ + K′ ⋅
x EO
xB
x EO δ ( B)
δ ( A)
= 1 − k ′ ⋅ N EO a f
= 1− K′ ⋅
x EO (recombination factor decreases)
or (ii)
We have
γ (C )
= 1−
N B DE x B
⋅ ⋅ δ (C ) x F I a f
(b)
γ ( A) N E DB x EO
δ ( A) 2 H K
= 1 − k ′′ ⋅ EO + k ′′ ⋅ x EO

or
Fx I
= 1− G J
1
2
δ (C ) 1
2HL K
αT B
= 1 + k ′′ ⋅ x EO
B δ ( A) 2
so (recombination factor increases)
(i)
α T ( B) 10.25
=1
α T ( A) (b)
and
n BO =
ni
2

=
b1.5x10 g 10 2

= 2.25 x10 cm
3 −3
(ii) 17
NB 10
α T (C )
=1 Then
α T ( A)
FG V IJ
n B (0) = n BO exp
HV K
BC
(c)
Neglect any change in space charge width t

1 = b 2.25 x10 g exp

F 0.6 I = 2.59 x10
H 0.0259 K
3 13 −3
cm
δ =
J −VBE FG IJ
1 + rO exp
J SO 2Vt H K Now
eDB n B (0)
1 k J nC =
= ≈ 1− xB
k
1+
J SO
J SO
=
b1.6x10 g(20)b2.59 x10 g
−19 13

−4
10
or

150
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

J nC = 0.829 A / cm
2

Assuming a long collector,

expG
F V IJ
eDC pnO
NB NE γ β
J =
HV K
BC
pC 0.01 0.990 99
L C t 0.10 0.909 9.99
where 1.0 0.50 1.0

p =
n
nO
=
b15. x10 g = 2.25x10 cm
2
i
10 2

4 −3
10.0 0.0909 0.10
16
NC 10 (c)
and For x B LB < 0.10 , the value of β is
LC = DCτ CO = b g
(15) 2 x10 −7 = 1.73x10 −3 cm unreasonably large, which means that the base
transport factor is not the limiting factor. For
Then x B LB > 1.0 , the value of β is very small,
b1.6x10 g(15)b2.25x10 g expF 0.6 I
−19 4
which means that the base transport factor will
J pC =
1.73 x10 H 0.0259 K
−3 probably be the limiting factor.
or
If N B N E < 0.01 , the emitter injection
J pC = 0.359 A / cm
2

efficiency is probably not the limiting factor. If,

The collector current is however, N B N E > 0.01 , then the current gain
b g
I C = J nC + J pC ⋅ A = (0.829 + 0.359) 10 b g −3
is small and the emitter injection efficiency is
or probably the limiting factor.
I C = 119
. mA
10.27
The emitter current is We have
I E = J nC ⋅ A = (0.829) 10 b g −3
eDB n BO
or
I E = 0.829 mA
J sO =
a f
LB tanh x B LB
Now

10.26 n BO =
ni
2

=
b1.5x10 g 10 2

= 2.25 x10 cm
3 −3
17
(a) NB 10
1 αT and
αT =
cosh x B LBa f β=
1− αT LB = DBτ BO = b g (25) 10 −7 = 15.8 x10 −4 cm
x B LB αT β Then
0.01 0.99995 19,999 b1.6x10 g(25)b2.25x10 g
−19 3

0.10
1.0
0.995
0.648
199
1.84
J =
b15.8x10 g tanha0.7 15.8f
sO −4

10.0 0.0000908 ≈0 or
−10
J sO = 1.3 x10
2
A / cm
(b) Now
For DE = DB , LE = LB , x E = x B , we have 1
1 1 δ =
J rOFG −V IJ
γ =
a
1 + p EO n BO f = 1+ aN B
NC f 1+
J H 2V K
sO
⋅ exp BE

t
and
1
β=
γ =
2 x10 F −V IJ
⋅ expG
−9

1− γ 1+
H 2(0.0259)K
BE
−10
1.3 x10
or

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

(a) where

δ =
1
F −V I
LE = DE τ EO = b
(10) 5x10 −8 = 7.07 µm g
1 + (15.38) exp
H 0.0518 K BE
Then
1
and 0.9968 =
p EO F 10 I F 15.8 I tanha1.26 15.8f
(b)
δ
1+
n BO
⋅
H 25K H 7.07 K tanha0.5 7.07f
β= which yields
1− δ
Now p EO N
= 0.003186 = B
VBE δ β n BO NE
0.20 0.755 3.08 Finally
16
0.40 0.993 142 NB 10
0.60 0.99986 7,142 NE = = ⇒
0.003186 0.003186
−3
N E = 3.14 x10 cm
18
(c)
If VBE < 0.4 V , the recombination factor is likely
the limiting factor in the current gain. 10.29
−8
(a) We have J rO = 5 x10
2
A / cm
10.28 We find
For β = 120 =
1− α
α
⇒α =
β
1+ β n BO =
2
ni
=
b1.5x10 g 10 2

= 4.5 x10 cm
3 −3
16
So NB 5 x10
120 and
α=
121
= 0.9917
LB = DBτ BO = b g
(25) 10 −7 = 15.8 µm
Now Then
α = γα T δ = 0.9917 = (0.998) x
2
eDB n BO
where
x = α T = γ = 0.9968
J sO =
f
LB tanh x B LB a
We have b1.6x10 g(25)b4.5x10 g
−19 3

1
=
b15.8x10 g tanha x L f −4

αT =
FG IJ
= 0.9968 B B

xB or
cosh
LB H K . x10
114
−11

which means
xB
J sO =
a
tanh x B LB f
= 0.0801 We have
LB 1
We find
δ =
J rO FG −V IJ
b g = 15.8 µm 1+ ⋅ exp
H 2V K
BE

= (25) 10
−7
LB = DBτ BO J sO t

Then For T = 300 K and VBE = 0.55 V ,

x B ( max) = (0.0801)(15.8) ⇒ δ = 0.995 =
x B ( max) = 1.26 µm 1
We also have FG 5x10 IJ ⋅ tanhFG x IJ ⋅ expFG −0.55 IJ
−8

1+
H 114. x10 K H L K H 2(0.0259)K
B

1 −11

γ =
p D L tanh x B LB a f which yields
B

1 + EO ⋅ E ⋅ B ⋅
n BO DB LE tanh x E LE a f

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

xB 10.34
= 0.047 Metallurgical base width = 1.2 µm = x B + x n
LB
We have
or
b
x B = (0.047) 15.8 x10
−4
g ⇒ p BO =
2
ni
=
b15. x10 g 10 2

= 2.25 x10 cm
4 −3
16
x B = 0.742 µm NB 10
and
(b)
For T = 400 K and J rO = 5 x10
−8 2
p B (0) = p BO exp
FG V IJ
A / cm ,
HV K
EB

LM − E OP t

n BO (400) F 400I ⋅ exp

N (0.0259)a400 300f Q
g

= b 2.25 x10 g exp

F 0.625 I
H 0.0259 K
3
4

n BO (300)
=
H 300K L − E OP
exp M
g

N (0.0259) Q
−3
= 6.8 x10 cm
14

Now
For E g = 112
. eV ,
dp B FG p (0)IJ
n BO (400) J p = eDB = eDB
H x K
B

= 117
5
. x10 dx
n BO (300)
B

or =
b1.6x10 −19
g(10)b6.8x10 g 14

n BO ( 400) = 117 b
. x10
5
gb4.5x10 g 3

or
xB
−3
= 5.27 x10 cm
8
−3
1.09 x10
Then Jp =
b1.6x10 g(25)b5.27 x10 g
−19 8 xB
J sO =
b15.8x10 g tanha0.742 15.8f
−4
We have
R 2 ∈aV + V f FG N IJ FG 1 IJ UV 1/ 2

x =S
T e H N KH N + N KW
or n
bi R C

−5
J sO = 2.84 x10
2
A / cm B C B

and
Finally,
1 L b10 gb10 g OP = 0.635 V
V = ( 0.0259 ) ln M
16 15

δ =
5 x10
−8
LM −0.55 OP bi
MN b15. x10 g PQ 10 2

1+
2.84 x10
−5
⋅ exp
N 2(0.0259)a400 300f Q We can write
or
δ = 0.9999994 x =S
R 2(11.7)b8.85x10 gaV + V f −14
bi R

T n
1.6 x10
−19

10.30
×G
F 10 IJ F 1 I UV 15 1/ 2

Computer plot
H 10 K H 10 + 10 K W 16 15 16

10.31 or
x = lb1177 x10 gaV + V fq
1/ 2
Computer plot .
−10
n bi R

We know
10.32 −4
Computer plot x B = 1.2 x10 − xn
For VR = VBC = 5 V
10.33 −4 −4
x n = 0.258 x10 cm ⇒ x B = 0.942 x10 cm
Computer plot
Then
J p = 11.6 A / cm
2

For VR = VBC = 10 V ,

153
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

−4
x n = 0.354 x10 cm ⇒ x B = 0.846 x10 cm
−4 Neglecting the space charge width at the B-E
junction, we have
Then
x B = x BO − x p
J p = 12.9 A / cm
2

Now
For VR = VBC = 15 V ,
Vbi
L b3x10 gb5x10 g OP
= ( 0.0259 ) ln M
16 15

MN b1.5x10 g PQ
−4 −4
x n = 0.429 x10 cm ⇒ x B = 0.771x10 cm 10 2

Then
or
J p = 14.1 A / cm
2

Vbi = 0.705 V
(b) and
We can write
a
J p = g ′ VEC + VA f =S
R 2 ∈aV + V f FG N IJ FG 1 IJ UV 1/ 2

T e H N KH N + N KW
bi CB C
xp
where B C B

g′ =
∆J p
=
∆J p
=
14.1 − 11.6
=S
R 2(11.7)b8.85x10 gaV + V f −14
bi CB

∆VEC ∆VBC 10 T 1.6 x10

−19

or
×G
F 5x10 IJ F 1 I UV 15 1/ 2

g ′ = 0.25 mA / cm / V
H 3x10 K H 5x10 + 3x10 K W
2
16 15 16
Now
or
J p = 11.6 A / cm at
2

= lb6.163 x10 gaV + V fq

−11 1/ 2
xp
VEC = VBC + VEB = 5 + 0.626 = 5.626 V bi CB

Then Now, for VCB = 5 V , x p = 0.1875 µm , and

11.6 = (0.25) 5.625 + VA a f For VCB = 10 V , x p = 0.2569 µm
which yields (a)
VA = 40.8 V x BO = 1.0 µm
For VCB = 5 V , x B = 1.0 − 0.1875 = 0.8125 µm
10.35 We find Then

n BO =
2
ni
=
b1.5x10 g 10 2

= 7.5 x10 cm
3 −3
J=
1.312 x10
−2

= 161.5 A / cm
2
16 −4
NB 3 x10 0.8125 x10
and For VCB = 10 V , x B = 1.0 − 0.2569 = 0.7431 µm

n B (0) = n BO exp
FG V IJ Then
HV K
BE
−2
1.312 x10
J= = 176.6 A / cm
2
t

= b 7.5 x10 g exp

F 0.7 I 0.7431x10
−4

H 0.0259 K
3
We can write

or J=
∆J
∆VCE
a
VCE + VA f
n B ( 0) = 4.10 x10 cm
15 −3

where
We have
∆J ∆J 176.6 − 161.5
dn B eDB n B (0) = =
J = eDB = ∆VCE ∆VCB 5
dx xB

=
b1.6x10 g(20)b4.10x10 g
−19 15

Then
= 3.02 A / cm / V
2

or
xB
a
. = 3.02 5.7 + VA ⇒
1615 f
−2
VA = 47.8 V
1.312 x10
J=
xB

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

(b) 10.36
x BO = 0.80 µm Neglect the B-E space charge region
For VCB = 5 V , x B = 0.80 − 0.1875 = 0.6125 µm
n BO =
2
ni
=
b1.5x10 g 10 2

= 2.25 x10 cm
3 −3

Then NB 10
17

−2
1.312 x10 Then
J= = 214.2 A / cm
2

0.6125 x10
−4
FG V IJ
n B (0) = n BO exp
HV K
BE
For VCB = 10 V , x B = 0.80 − 0.2569 = 0.5431 µm
t
Then
F 0.60 I = 2.59 x10
H 0.0259 K
−2 −3
= 2.25 x10 exp
3 13
1.312 x10 cm
J= = 241.6 A / cm
2
−4
0.5431x10
Now dn B eDB n B (0)
J = eDB =
∆J ∆J 241.6 − 214.2 dx xB
= =
∆VCE ∆VCB 5
=
b1.6x10 g(20)b2.59 x10 g
−19 13

= 5.48 A / cm / V
2
xB
We can write or

J=
∆J
∆VCE
a
VCE + VA f J=
8.29 x10
xB
−5

or (a)
a
214.2 = 5.48 5.7 + VA ⇒ f Now x B = x BO − x p
VA = 33.4 V Now
(c) Lb10 gb10 g OP = 0.754 V
V = (0.0259 ) ln M
16 17

x BO = 0.60 µm
For VCB = 5 V , x B = 0.60 − 0.1875 = 0.4124 µm
bi
MN b15. x10 g PQ 10 2

Then Also

1.312 x10
−2

x =M
L 2 ∈aV + V f FG N IJ FG 1 IJ OP 1/ 2

N e H N KH N + N KQ
bi CB C
J= = 318.1 A / cm
2
p
−4
0.4125 x10 B C B

For VCB = 10 V , x B = 0.60 − 0.2569 = 0.3431 µm

=M
L 2(11.7)b8.85x10 gaV + V f −14
bi CB
Then
1.312 x10
−2 N 1.6 x10
−19

J= −4
= 382.4 A / cm
2

×G
F 10 IJ F 1 I OP 16 1/ 2

H 10 K H 10 + 10 K Q
0.3431x10
Now 17 16 17

∆J ∆J 382.4 − 318.1 or
= =
∆VCE ∆VCB x = b1177 x10 gaV + V f
1/ 2
5 .
−11
p bi CB

= 12.86 A / cm / V
2
For VCB = 1 V , x p (1) = 4.544 x10 cm
−6

We can write
For VCB = 5 V , x p (5) = 8.229 x10 cm
−6

J=
∆J
∆VCE
a
VCE + VA f Now
−4
so x B = x BO − x p = 11
. x10 − x p
a
318.1 = 12.86 5.7 + VA ⇒ f Then
For VCB = 1 V , x B (1) = 1.055 µm
VA = 19.0 V
For VCB = 5 V , x B (5) = 1.018 µm
So
∆x B = 1.055 − 1.018 ⇒

155
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Solutions Manual Problem Solutions

or NE ∆E g (meV ) γ α β
∆x B = 0.037 µm
(b) E17 0 0.5 0.495 0.98
Now E18 25 0.792 0.784 3.63
−5
8.29 x10 E19 80 0.820 0.812 4.32
J (1) = = 0.7858 A / cm
2
−4 E20 230 0.122 0.121 0.14
1.055 x10
and
−5
8.29 x10 10.38
J (5) = = 0.8143 A / cm
2

1.018 x10
−4
(a) We have
and 1
∆J = 0.8143 − 0.7858 γ =
p EO DE LB tanh x B LB a f
or
∆J = 0.0285 A / cm
2
1+ ⋅
n BO DB LE tanh x E LE a f
For x E = x B , LE = LB , DE = DB , we obtain

10.37 1 1
Let x E = x B , LE = LB , DE = DB
γ =
1+
pEO
=
bn N g expb∆E kT g
2
i E

bn N g
g
1+
Then the emitter injection efficiency is n BO 2
i B
1 1
γ = = or
p n
2
N 1
1 + EO 1 + iE ⋅ 2B
n BO N E niB
γ =
NB FG ∆E IJ
1+
H kT K
g
exp
where niB = ni
2 2
NE
For no bandgap narrowing, niE = ni . −3
2 2
For N E = 10 cm , we have ∆E g = 80 meV .
19

FG ∆E IJ , Then
H kT K
g
With bandgap narrowing, niE = ni exp
2 2

1
Then
0.996 =
NB F 0.080 I
1
1+
10
19
exp
H 0.0259 K
γ =
NB FG ∆E IJ which yields
1+
H kT K
g
exp N B = 183
. x10 cm
15 −3
NE
(a) (b)
No bandgap narrowing, so ∆E g = 0 . Neglecting bandgap narrowing, we would have
1 1
α = γα T δ = γ (0.995) . We find
2 γ = ⇒ 0.996 =
N N
1+ B 1 + 19B
NE 10
NE γ α β
which yields
E17 0.5 0.495 0.980 N B = 4.02 x10 cm
16 −3

E18 0.909 0.8999 8.99

E19 0.990 0.980 49
E20 0.9990 0.989 89.9 10.39
(a)
(b) ρL L ( S / 2)
Taking into account bandgap narrowing, we find R=
A
=
σA
=
eµ p N B Lx B a f
Then

156
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
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4 x10
−4 Solving for S , we find
R=
b1.6x10 g(400)b10 gb100 x10 gb0.7 x10 g
−19 16 −4 −4 S = 2 Rµ p eN B Lx B

or = 2(273)(400) 1.6 x10 b gb10 g

−19 16

×b100 x10 gb0.7 x10 g

R = 893 Ω −4 −4

(b) or
b
V = IR = 10 x10
−6
g(893) ⇒ S = 2.45 µm
V = 8.93 mV
(c) 10.41
At x = 0 , (a)
FG V IJ FG −ax IJ
N B = N B (0) exp
n p (0) = n pO exp
HV K Hx K
BE

t B

S where
and at x =
2
,
F N (0) IJ > 0
a = lnG
H N a x fK
B

FG V − 0.00893IJ
n ′p (0) = n pO exp
B B

H V K
BE
and is a constant. In thermal equilibrium
t
dN B
Then J p = eµ p N B Ε − eD p =0

n expG
F V − 0.00893IJ dx

H V K so that
BE

n ′ ( 0)
F I
pO
D p 1 dN B kT 1 dN B
F V IJ
p
= t

n ( 0)
n expG
Ε= ⋅
µ p N B dx
⋅
H K
= ⋅ ⋅

HV K e N B dx
p BE
pO

which becomes
F −0.00893I = 0.7084
t

= exp
H 0.0259 K F kT I ⋅ 1 ⋅ N (0) ⋅ FG −a IJ ⋅ expFG −ax IJ
Ε=
H eK N Hx K H x K
B
B
B B
or
n ′p (0) F kT I ⋅ FG −a IJ ⋅ 1 ⋅ N
n p ( 0)
= 70.8% =
H eK Hx K N B B
B

or
FG a IJ F kT I
10.40
From problem 10.39(c), we have
Ε=−
H x KH e K
FG IJ
B

n ′p (0) −V which is a constant.

n p ( 0)
= exp
Vt H K (b)
The electric field is in the negative x-direction
where V is the voltage drop across the S 2 which will aid the flow of minority carrier
length. Now electrons across the base.
−V F I (c)
0.90 = exp
0.0259 H K J n = eµ n nΕ + eDn
dn
dx
which yields V = 2.73 mV
We have Assuming no recombination in the base, J n will
−3 be a constant across the base. Then
R= =
V 2.73 x10
= 273 Ω dnFG µ IJ nΕ = J dn FG Ε IJ
dx H D K HV K
−6
I 10 x10 + n n
= +n
We can also write eD
n n
dx t

S 2 F kT I
R=
eµ p N B Lx B a f where V =
HeKt

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

The homogeneous solution to the differential

equation is found from 10.43
dn H We want BVCEO = 60 V
+ An H = 0
dx So then
Ε BVCBO BVCBO
where A = BVCEO = ⇒ 60 =
Vt
n
β 3
50
The solution is of the form which yields
n H = n H ( 0) exp( − Ax ) BVCBO = 221 V
The particular solution is found from For this breakdown voltage, we need
−3
N C ≈ 1.5 x10 cm
15
nP ⋅ A = B
Jn The depletion width into the collector at this
where B = voltage is
eDn
The particular solution is then RS 2 ∈aV + V f FG N IJ FG 1 IJ UV 1/ 2

FG J IJ x C = xn =
T e H N KH N + N K W
bi BC B

B H eD K
n C B C

JV J We find
nP =
A
=
FG Ε IJ eD Ε eµ Ε
= = n n t n
Lb1.5x10 gb10 g OP = 0.646 V
V = (0.0259 ) ln M
15 16

HV K MN b15. x10 g PQ
n n
bi 2
10
t

The total solution is then and VBC = BVCEO = 60 V

Jn
n= + n H ( 0) exp( − Ax ) so that
eµ n Ε
xC
R 2(11.7)b8.85x10 g(0.646 + 60)
=S
−14

and
FG V IJ = n expFG V IJ 2 T 1.6 x10
−19

n(0) = n pO exp
H V K N (0) H V K
BE i BE

×G
F 10 IJ F 1 I UV 16 1/ 2

Then
t B t
H 1.5x10 K H 10 + 15. x10 K W15 16 15

n (0) =
n F V IJ − J
expG
2 or

H V K eµ Ε x C = 6.75 µm
i BE n

N ( 0)
H
B t n

10.44
10.42
(a) The basic pn junction breakdown voltage
LM b3x10 gb5x10 g OP = 0.824 V
Vbi = ( 0.0259 ) ln
16 17

from the figure for N C = 5 x10 cm

15 −3
is MN b15. x10 g PQ 10 2

approximately BVCBO = 90 V . At punch-through, we have

x = 0.70 x10 = x aV = V f − x aV = 0f
−4
(b) B p BC th p BC
We have
BVCEO = BVCBO n 1 − α =S
R 2 ∈bV + V g FG N IJ FG 1 IJ UV 1/ 2

T e H N KH N + N KW
bi pt C

For n = 3 and α = 0.992 , we obtain B C B

BVCEO = 90 ⋅ 1 − 0.992 = (90)(0.20)

3
R 2 ∈V FG N IJ FG 1 IJ UV
−S
1/ 2

T e H N KH N + N KW
bi C

or
B C B
BVCEO = 18 V
which can be written as
(c)
The B-E breakdown voltage, for
−3
N B = 10 cm , is approximately,
17

BVBE = 12 V

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

g = RST 2(11.7)b18.6.85x10x10 g(25)

−4 −14
0.70 x10
RS 2(11.7)b8.85x10 gbV + V g −14
bi pt
b0.75x10 −4
−19

=
T 1.6 x10
−19

×G
F 10 IJ FG 1 IJ UV
16 1/ 2

×G
F 5x10 IJ F 1 I UV 17 1/ 2
H N K H 10 + N K W 16

H 3x10 K H 5x10 + 3x10 K W

16 17 16
We obtain
B B

R 2(11.7)b8.85x10 g(0.824)
−S
−14 N B = 1.95x10 cm
16 −3

T 1.6 x10
−19

10.47

×G
F 5x10 IJ F 1 I UV 17 1/ 2

F kT I ⋅ lnLM I a1 − α f + I ⋅ α OP
H 3x10 K H 5x10 + 3x10 K W16 17 16
H e K Nα I − a1 − α fI α Q
VCE ( sat ) = C

F B
R

F
B

C
F

R
which becomes We can write
0.70 x10 = b0.202 x10 g V + V F V (sat )I = (1)(1 − 0.2) + I F 0.99 I
−4 −4

−b0.183 x10 g
bi pt

−4
exp
H 0.0259 K (0.99)I − (1 − 0.99)(1) H 0.20 K
CE

B
B

or
F V (sat )I = FG 0.8 + I IJ (4.95)
We obtain
Vbi + Vpt = 19.1 V
or
exp
H 0.0259 K H 0.99 I − 0.01K
CE

B
B

Vpt = 18.3 V (a)

For VCE ( sat ) = 0.30 V , we find
Considering the junction alone, avalanche
breakdown would occur at approximately F 0.30 I = 1.0726x10
H 0.0259 K
5
exp
BV ≈ 25 V .

=G
F 0.8 + I IJ (4.95)
10.45
H 0.99 I − 0.01K
B

(a) Neglecting the B-E junction depletion width,

a f
B

eWB
2
N B NC + NB We find
Vpt = ⋅ I B = 0.01014 mA
2∈ NC
R|b1.6x10 gb0.5x10 g
=S
−19 −4 2
(b)
For VCE ( sat ) = 0.20 V , we find
|T 2(11.7)b8.85x10 g −14
I B = 0.0119 mA

b10 gb10 + 7 x10 g UV 17 17 15 (c)

For VCE ( sat ) = 0.10 V , we find
⋅
b7 x10 g W 15

I B = 0.105 mA
or
Vpt = 295 V
10.48
However, actual junction breakdown for these For an npn in the active mode, we have VBC < 0 ,
doping concentrations is ≈ 70 V . So punch-
FG V IJ ≈ 0 .
through will not be reached.
HV K
BC
so that exp
t

10.46 Now
At punch-through, I E + I B + IC = 0 ⇒ I B = − IC + I E a f
R 2 ∈bV + V g ⋅ FG N IJ FG
=S
1 IJ UV 1/ 2
Then we have

T e H N KH N + N KW
bi pt C
xO
B B C

Since Vpt = 25 V , we can neglect Vbi .

Then we have

159
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

RS LM FG V IJ − 1OP + I UV FG V IJ ≈ 0 and
N HV K Q W
I B = − α F I ES exp For VBC < ≈ 0.1 V , exp
HV K
BE BC

T t
CS
t

R L F V IJ − 1OPUV
− S−α I − I MexpG
I C ≈ constant. This equation does not include

N H V K QW
BE

T R CS ES
t
the base width modulation effect.
For VBE = 0.2 V ,
or
L F V IJ − 1OP − a1 − α fI
= a1 − α f I MexpG
I C = (0.98) 10 b g expFH 0.0250
−13 0.2 I
K + 5x10
−13

N HV K Q
BE
IB F ES R CS
t
or
−10
I C = 2.22 x10 A
10.49
We can write For VBE = 0.4 V ,
LMexpFG V IJ − 1OP I C = 5 x10
−7
A
N HV K Q
BE
I ES
t For VBE = 0.6 V ,
L F V IJ − 1OP − I
= α I MexpG
I C = 113
. x10
−3
A
N HV K Q
BC
R CS E
t

Substituting, we find 10.51

I = α kα I MexpG
L F V IJ − 1OP − I p Computer Plot

N HV K Q
BC
C F R CS E
t 10.52
L F V IJ − 1OP
− I MexpG
(a)
F kT I ⋅ 1 = 0.0259 = 518. Ω
N HV K Q
BC

rπ′ =
H e K I 0.5x10
CS
t −3

From the definition of currents, we have E

I E = − I C for the case when I B = 0 . Then So

. )b0.8 x10 g ⇒
LM FG IJ − 1OP = r ′C = (518
−12
τe π
VBC je

N HV K Q
I C = α F α R I CS exp
t
or
τ e = 41.4 ps
L F V IJ − 1OP
+α I − I MexpG
Also
N HV K Q
BC

When a C-E voltage is applied, then the B-C

F C CS
t
τb =
xB
2

=
b0.7 x10 g −4 2

⇒
2(25)
becomes reverse biased, so expG
F V IJ ≈ 0 . Then 2 Dn

HV K or
BC

t τ b = 98 ps
I C = −α F α R I CS + α F I C + I CS We have
We find
I 1 − α Fα R a f b g
τ c = rc Cµ + Cs = (30)(2) 0.08 x10 b −12
g⇒
or
I C = I CEO = CS
1− α F a f τ c = 4.8 ps
Also
10.50 xdc 2 x10
−4

We have τd = = ⇒
LM FG V IJ − 1OP
+7
vs 10
I C = α F I ES exp
N HV K Q or
BE

t τ d = 20 ps
LM FG V IJ − 1OP (b)
N HV K Q
− I CS exp BC

τ ec = τ e + τ b + τ c + τ d
t
= 41.4 + 98 + 4.8 + 20 ⇒

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 10
Solutions Manual Problem Solutions

or 10.54
τ ec = 164.2 ps We have
Then τ ec = τ e + τ b + τ d + τ c
1 1 We are given
fT =
2πτ ec
=
b
2π 164.2 x10
−12
g⇒ τ b = 100 ps and τ e = 25 ps
We find
or −4
xd 1.2 x10
f T = 970 MHz τd = = 7
= 1.2 x10
−11
s
vs 10
Also
or
fT 970
fβ = = ⇒ τ d = 12 ps
β 50 Also
or
f β = 19.4 MHz
b
τ c = rc Cc = (10) 0.1x10
−12
g = 10 −12
s
or
τ c = 1 ps
10.53 Then

τb =
xB
2

=
b0.5x10 g −4 2

= 6.25 x10
−11
s
τ ec = 25 + 100 + 12 + 1 = 138 ps
2 DB 2(20) We obtain
1 1
We have τ b = 0.2τ ec , fT = =
b = 115
g
9
−12
. x10 Hz
So that 2πτ ec 2π 138 x10
τ ec = 3125
. x10 s
−10 or
Then f T = 115
. GHz
1 1
fT = =
2πτ ec 2π 3125
. x10
−10
⇒
b g
or
f T = 509 MHz

161
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Solutions Manual Problem Solutions

(page left blank)

162
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

Chapter 12
Problem Solutions 2∈ L 2(11.7)b8.85x10 g OP
=M
−14 1/ 2

12.1
(a)
eN a N b1.6x10 gb10 g Q −19 16

= 0.360 µm / V
LM V OP
1/ 2

I D = 10
−15
exp GS We have
N (2.1)V Q t VDS ( sat ) = VGS − VT
For V = 0.5 V , (a)
GS

I = 10 exp M
L 0.5 OP ⇒
−15
For VGS = 5 V ⇒ VDS ( sat ) = 4.25 V
Then
D
N (2.1)(0.0259) Q −12
∆L = 0.360 0.347 + 5 − 0.347 + 4.25
I D = 9.83x10 A
or
For VGS = 0.7 V , ∆L = 0.0606 µm
−10 If ∆L is 10%of L , then L = 0.606 µm
I D = 3.88 x10 A
(b)
For VGS = 0.9 V ,
For VDS = 5 V , VGS = 2 V ⇒ VDS ( sat ) = 1.25 V
−8
I D = 1.54 x10 A Then
Then the total current is: ∆L = 0.360 0.347 + 5 − 0.347 + 1.25
b g
I Total = I D 10
6
or
For VGS = 0.5 V , I Total = 9.83 µA ∆L = 0.377 µm
Now if ∆L is 10% of L, then L = 3.77 µm
For VGS = 0.7 V , I Total = 0.388 mA
For VGS = 0.9 V , I Total = 15.4 mA
12.3
(b)
2∈
Power: P = I Total ⋅ VDD ∆L = ⋅ φ fp + VDS ( sat ) + ∆VDS
Then eN a
For VGS = 0.5 V , P = 49.2 µW − φ fp + VDS ( sat )
For VGS = 0.7 V , P = 1.94 mW where
For VGS = 0.9 V , P = 77 mW FG N IJ = (0.0259) lnFG 4 x10 IJ 16

φ fp = Vt ln
Hn K H 1.5x10 K
a
10
i

12.2 or
We have φ fp = 0.383 V
2∈ and
∆L = ⋅ φ fp + VDS ( sat ) + ∆VDS
eN a L 4 ∈φ OP
=M
fp
1/ 2

− φ fp + VDS ( sat )
x dT
N eN Q a

where L 4(11.7)b8.85x10 g(0.383) OP

=M
−14
1/ 2

FG N IJ = (0.0259) lnFG 10 IJ 16

N b1.6x10 gb4 x10 g Q −19

Hn K H 1.5x10 K
16
φ fp = Vt ln a
10
i or
or x dT = 0.157 µm
φ fp = 0.347 V Then
We find QSD ′ ( max) = eN a x dT

185
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

b
= 1.6 x10
−19
gb4 x10 gb0.157 x10 g
16 −4 12.7
(a) Assume VDS ( sat ) = 1 V , We have
or
′ ( max ) = 10 C / cm −7 2 VDS ( sat )
QSD Ε sat =
Now L

fFGH ∈t IJK + φ + 2φ
We find
a
′ ( max) − QSS′
VT = QSD ox
ms fp
L( µm) Ε sat (V / cm)
ox
3
so that 3 3.33 x10
− b1.6 x10 gb3 x10 g b400 x10 g
4
10
−7 −19 10 −8 1 10

(3.9)b8.85x10 g
VT = −14 0.5 2 x10
4

4
0.25 4 x10
+0 + 2(0.383) 4
0.13 7.69 x10
or (b)
VT = 1.87 V
Assume µ n = 500 cm / V − s , we have
2

Now
v = µ n Ε sat
VDS ( sat ) = VGS − VT = 5 − 187
. = 3.13 V
Then
We find
For L = 3 µm , v = 1.67 x10 cm / s
LM 2(11.7)b8.85x10 g OP
6
−14 1/ 2
2∈

N b1.6x10 gb4 x10 g Q

= −19 16
For L = 1 µm , v = 5 x10 cm / s
6

eN a
For L ≤ 0.5 µm , v ≈ 10 cm / s
7
−5
= 180
. x10
Now
∆L = 180
. x10 ⋅
−5
0.383 + 3.13 + ∆VDS 12.8
We have I D′ = L( L − ∆L ) I D
−1

− 0.383 + 313
. We may write
or ∂I D′
= ( −1) L( L − ∆L ) I D
FG −∂(∆L)IJ
H ∂V K
−2
−5 gO =
∆L = 180
. x10 3.513 + ∆VDS − 3.513 ∂VDS DS

We obtain L ∂( ∆L )
= ⋅ ID ⋅
∆VDS ∆L( µm)
( L − ∆L ) 2 ∂VDS
We have
0 0
1 0.0451 2∈
2 0.0853 ∆L = ⋅ φ fp + VDS − φ fp + VDS ( sat )
eN a
3 0.122
4 0.156 We find
5 0.188 ∂( ∆L ) 2∈ 1
= ⋅
∂VDS eN a 2 φ fp + VDS
12.4 (a)
Computer plot For VGS = 2 V , ∆VDS = 1 V , and
VDS ( sat ) = VGS − VT = 2 − 0.8 = 1.2 V
12.5
Also
Plot
VDS = VDS ( sat ) + ∆VDS = 1.2 + 1 = 2.2 V
12.6 and
Plot
φ fp = (0.0259) ln
FG 3x10 IJ = 0.376 V
16

H 15. x10 K 10

Now

186
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

2∈ L 2(11.7)b8.85x10 g OP
=M
−14
1/ 2 (b)
F Ε IJ −1/ 3

eN a N b1.6x10 gb3x10 g Q
−19 16
Let µ eff =µ G
HΕ K O
eff

C
= 0.2077 µm / V
1/ 2

Where µ O = 1000 cm / V − s and

2

We find
Ε C = 2.5 x10 V / cm .
4
∆L = 0.2077 0.376 + 2.2 − 0.376 + 1.2
= 0.0726 µm VGS
Let Ε eff =
Then t ox
∂( ∆L ) 0.2077 1 We find
∂VDS
=
2
⋅
0.376 + 2.2
Cox =
∈ox
⇒ t ox =
∈ox
=
b
(3.9) 8.85x10 −14 g
= 0.0647 µm / V t ox Cox 6.9 x10
−8

From the previous problem, or

I D = 0.48 mA , L = 2 µm t ox = 500 A
°

Then Then
gO =
2
(2 − 0.0726) 2
b
0.48 x10 (0.0647 )
−3
g VGS Ε eff µ eff I D ( sat )

or 1 -- -- 0
−5
g O = 1.67 x10 S 2 4E5 397 0.370
so that 3 6E5 347 0.692
4 8E5 315 0.989
1
rO = = 59.8 kΩ 5 10E5 292 1.27
gO (c)
The slope of the variable mobility curve is not
(b)
constant, but is continually decreasing.
If L = 1 µm , then from the previous problem,
we would have I D = 0.96 mA , so that 12.10
gO =
1
(1 − 0.0726)2
b0.96x10 g(0.0647) −3
Plot

12.11
or
′ ( max)
QSD
g O = 7.22 x10 S
−5
VT = VFB + + 2φ fp
Cox
so that
We find
rO =
1
= 13.8 kΩ FG N IJ = (0.0259) lnFG 5x10 IJ 16

φ fp = Vt ln
Hn K H 1.5x10 K
a
gO 10
i

or
12.9
φ fp = 0.389 V
(a)

I D ( sat ) =
Wµ n Cox
aV GS
− VT f 2
and
L 4 ∈φ OP 1/ 2

=M
2L fp

F I (500)b6.9 x10 gaV − 1f

10
x dT
N eN Q
H 2K
−8 2
= a

or
GS

L 4(11.7)b8.85x10 g(0.389) OP
=M
−14 1/ 2

I ( sat ) = 0.173aV − 1f (mA)

D GS
2
N b1.6x10 gb5x10 g Q −19 16

and or

I ( sat ) = 0.173 aV − 1f (mA)

1/ 2 x dT = 0.142 µm
D GS
Now

187
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

′ ( max) = eN a x dT
QSD 12.13

b
= 1.6 x10
−19
gb5x10 gb0.142 x10 g
16 −4
(a) Non-saturation region
1 W F I a f
I D = µ n Cox
H K
2 VGS − VT VDS − VDS
2
or
2 L
′ ( max ) = 114
QSD . x10 C / cm
−7 2
We have
Also ∈ C

Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g = 8.63x10 −8
F / cm
2
Cox = ox ⇒ ox
t ox k
−8
t ox 400 x10 and
Then W ⇒ kW , L ⇒ kL
114
. x10
−7 also
VT = −112
. + −8
+ 2(0.389 ) VGS ⇒ kVGS , VDS ⇒ kVDS
8.63x10
So
or
1 F IF I a
C kW
f a f
VT = +0.90 V
H KH K
2
I D = µ n ox 2 kVGS − VT kVDS − kVDS
2 k kL
(a)
Then
ID =
Wµ n Cox
2L
a f
2 VGS − VT VDS − VDS
2
I D ⇒ ≈ kI D
In the saturation region
and
VDS ( sat ) = VGS − VT 1 C F I F I kV
kW
H KH K
2
I D = µ n ox GS
− VT
We have 2 k kL
F IF I b
20 1
g Then
ID =
2H KH K
2
(400) 8.63x10 −8 I D ⇒ ≈ kI D

a
× 2 VGS − VT VDS − VDS f 2 (b)
a fa f
P = I DVDD ⇒ kI D kVDD ⇒ k P
2

or
a f
I D = 0.173 2 VGS − VT VDS − VDS (mA)
2

12.14
For VDS = VDS ( sat ) = VGS − VT = 1 V , a f
I D ( sat ) = WCox VGS − VT v sat
I D ( sat ) = 0.173 mA
F C I akV − V fv
For VDS = VDS ( sat ) = VGS − VT = 2 V ,
⇒ ( kW )
HkK ox
GS T sat

I D ( sat ) = 0.692 mA or
(b) I D ( sat ) ≈ kI D ( sat )
For VDS ≤ 1.25 V , µ = µ n = 400 cm / V − s .
2

The curve for VGS − VT = 1 V is unchanged. For 12.15

(a)
VGS − VT = 2 V and 0 ≤ VDS ≤ 1.25 V , the curve
in unchanged. For VDS ≥ 1.25 V , the current is
a f
(i) I D = Kn VGS − VT = (0.1)(5 − 0.8)
2 2

or
constant at I D = 1.764 mA
I D = 0.173 2( 2 )(1.25) − (1.25)
2
= 0.595 mA (ii)
When velocity saturation occurs, F 0.1I (0.6)(5) − 0.8
H 0.6K
2

VDS ( sat ) = 1.25 V for the case of ID =

VGS − VT = 2 V . or
I D = 0.807 mA
12.12 (b)
Plot (i) P = (1.764 )(5) ⇒ P = 8.82 mW
(ii) P = (0.807 )(0.6)(5) ⇒ P = 2.42 mW

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
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(c)
0.807 x dT
L 4 ∈φ OP
=M
fp
1/ 2

Current: Ratio =
1.764
= 0.457 N eN Q a

2.42
=M
L 4(11.7)b8.85x10 g(0.376) OP −14 1/ 2

N b1.6x10 gb3x10 g Q
Power: Ratio = = 0.274 −19 16
8.82
or
12.16 x dT = 0.180 µm
eN a xdT RS r LM 2 xdT OPUV Also
∆VT = −
Cox TL N
j
1+
rj
−1
QW Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
−8
Now t ox 800 x10
FG N IJ = (0.0259) lnFG 10 IJ 16 or
φ fp = Vt ln
Hn K H 1.5x10 K
a
−8
Cox = 4.31x10
2
10 F / cm
i
Then
or
φ fp = 0.347 V ∆VT = −0.20 = −
b1.6x10 gb3x10 gb0.18x10 g
19 16 −4

−8
and 4.31x10

LM 4 ∈φ OP 1/ 2
R 0.6 LM 1 + 2(0.18) − 1OPUV
×S
T L N 0.6 QW
fp
x dT =
N eN Q a

=M
L 4(11.7)b8.85x10 g(0.347) OP −14 1/ 2 or
0.319
N b1.6x10 gb10 g Q −19 16 = −0.20 = −

which yields
L
or
x dT = 0.30 µm L = 1.59 µm
Also

Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g 12.18
We have
−8
t ox 450 x10 L ′ = L − (a + b )
−8
= 7.67 x10
2
F / cm and from the geometry
Then (1) b a + r g + x = br + x g 2 2 2

∆VT = −
b1.6x10 gb10 gb0.3x10 g−19 16 −4
and
j dT j dS

(2) bb + r g + x = br + x g
−8 2 2
7.67 x10 2

R 0.3 LM 1 + 2(0.3) − 1OPUV

×S
From (1),
j dT j dD

or
T 1 N 0.3 QW b a + r g = br + x g − x
j
2

j dS
2 2
dT

so that
∆VT = −0.137 V
a= br + x g − x − r j dS
2 2
dT j

12.17 which can be written as

RS r LM 1 + 2 x − 1OPUV L F x I Fx I OP
a = r M G1 +
2 2
eN a xdT
MN H r JK − GH r JK
j
∆V = −
PQ
dT dS dT
−1
C
T

T L N r QW ox j
j
j j

Now

φ = (0.0259) lnG
F 3x10 IJ = 0.376 V 16
or

fp
H 15. x10 K 10

and

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

L F x IJ − FG x IJ − 1OP RSLM OP
a=rM
2 2
eN a x dT rj 2 x dS
+G
2 xdS ∆VT = − ⋅ 1+ +α −1
2

MN H r K H r K PQ 2 L TN Q
1+ dS dT
j
rj Cox rj

LM OPUV
j j

Define 2 xdD
+ 1+ + β −1
2

α =
2 xdS − xdT
2

2
2
N rj QW
rj Note that if xdS = xdD = xdT , then α = β = 0
We can then write and the expression for ∆VT reduces to that given
LM 1 + 2 x + α − 1OP
a = rj dS 2
in the text.

N r Q j
12.19
Similarly from (2), we will have We have L ′ = 0 , so Equation (12.25) becomes
L 2 x + β − 1OP
b = r M 1+ dD 2 L + L′ L 1 RS r LM j 2 xdT OPUV
⇒ = = 1− 1+ −1
N r
j

Q j 2L 2L 2 T LN rj QW
where or

β =
2 xdD − xdT
2 2
rjLM 1+
OP 1
2 xdT
−1 =
LN Q 2
2
rj r j
The average bulk charge in the trapezoid (per
Then Equation (12.26) is
unit area) is
F I F 1I
QB′ ⋅ L = eN a xdT
L + L′
2 H K
Q ′ = eN x
B
H 2Ka dT

The change in the threshold voltage is

or
Q ′ ( max)
L + L′ F I Q′
∆VT = B − SD
QB′ = eN a xdT
2L H K or
Cox Cox
We can write
L + L′ 1 L′ 1
= + = +
1
L − (a + b ) ∆VT =
a fa
1 2 eN a xdT
−
eN a xdT f a f
2L 2 2L 2 2L Cox Cox
which is or
(a + b ) 1 eN a xdTF Ia f
= 1−
2L
∆VT = −
2 CoxHK
Then

QB′ = eN a xdT 1 −
LM
(a + b ) OP 12.20
2L N Q Computer plot
Now QB′ replaces QSD ′ ( max ) in the threshold
equation. Then 12.21
Computer plot
Q′ Q ′ ( max)
∆VT = B − SD
Cox Cox 12.22
eN a x dT LM1 − (a + b) OP − eN x eN a xdT RS r LM 2 xdT OPUV
=
N 2L Q C
a dT j
∆VT = − 1+ −1

or
Cox ox Cox TL N rj QW
eN a xdT (a + b )
∆VT = − ⋅
Cox 2L
Then substituting, we obtain

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

F N I akx f R kr L OPUV
We find
FG 3x10 IJ = 0.376 V
e
HkK a
dT

ST kL MN 2 kxdT
φ fp = (0.0259) ln
16

FC I H 15. x10 K
j
⇒− 1+ −1

HkK ox krj QW and

10

or L 4 ∈φ OP
=M
fp
1/ 2

∆VT = k∆VT x dT
N eN Q a

12.23 L 4(11.7)b8.85x10 g(0.376) OP

=M
−14 1/ 2

F ξx I
eN a xdT
N b1.6x10 gb3x10 g Q −19 16

∆VT =
C HWK ox
dT

or
We find x dT = 0.180 µm

φ = (0.0259) lnG
F 10 IJ = 0.347 V 16
Also
fp
H 15. x10 K 10

Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
−8
and t ox 800 x10

x =M
L 4 ∈φ OP fp
1/ 2
or
dT
N eN Q a
Cox = 4.31x10 F / cm
Now, we can write
−8 2

=M
L 4(11.7)b8.85x10 g(0.347) OP −14 1/ 2

eN a xdT
2

N b1.6x10 gb10 g Q −19 16 W=

a f
Cox ∆VT
or
x dT = 0.30 µm b1.6x10 gb3x10 gb0.18x10 g
−19 16 −4 2

Also
=
b4.31x10 g(0.25) −8

Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g or
W = 1.44 µm
−8
t ox 450 x10
or
−8
12.25
Cox = 7.67 x10
2
F / cm Computer plot
Then
b1.6x10 gb10 gb0.3x10 g −19 16 −4
12.26
∆V = T eN a xdT F ξx I
HWK
−8
7.67 x10 ∆VT = dT

L aπ 2fb0.3x10 g OP
×M
−4 Cox

N 2.5x10 Q −4 Assume that ξ is a constant

F N I akx f
or
∆VT = +0.118 V
e
H k K F ξ ⋅ kx I
a
dT

⇒
F C I H kW K
dT

12.24
HkK ox

Additional bulk charge due to the ends: or

1 2 F I a f ∆VT = k∆VT
∆QB = eN a L
2 H K
x dT ⋅ 2 = eN a LxdT ξ xdT

where ξ = 1 . 12.27
Then (a)

∆VT =
eN a x dT
2 b
VBD = 6 x10 t ox = 6 x10
6
g b 6
gb250x10 g −8

or
CoxW

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

VBD = 15 V LD = 4.09 x10 cm

−6

(b) Six Debye lengths:

With a safety factor of 3,
1
b
6 4.09 x10
−6
g = 0.246 µm
VBD = ⋅ 15 ⇒ VBD = 5 V From Example 12.4, we have x dO = 0.336 µm ,
3 which is the zero-biased source-substrate
junction width.
12.28 At near punch-through, we will have
We want VG = 20 V . With a safety factor of 3, x dO + 6 LD + xd = L
then VBD = 60 V , so that where x d is the reverse-biased drain-substrate
b g
60 = 6 x10 t ox ⇒ t ox = 1000 A
6 °
junction width. Now
0.336 + 0.246 + xd = 1.2 ⇒ xd = 0.618 µm at
12.29 near punch-through.
Snapback breakdown means αM = 1 , where We have
ID F I L 2 ∈aV + V f OP
=M
1/ 2

α = (0.18) log10
H K
bi DS

and
3 x10
−9
xd
N eN Q a

or
1 2
xd eN a
M =
VCE
m
FG IJ Vbi + VDS =
2∈
1−
VBD H K b0.618x10 g b1.6x10 gb10 g
−4 2 −19 16

2(11.7 )b8.85 x10 g

=
Let VBD = 15 V , m = 3 . Now when −14

α which yields
αM = 1 =
FV I 3
Vbi + VDS = 2.95 V
1−
H 15 K
CE

From Example 12.4, we have Vbi = 0.874 V , so

we can write this as that
FV I 3
VDS = 2.08 V
1−
H 15 KCE
= α ⇒ VCE = 15 3 1 − α
which is the near punch-through voltage. The
ideal punch-through voltage was
Now
VDS = 4.9 V
ID α VCE
E-8 0.0941 14.5
12.31
E-7
E-6
0.274
0.454
13.5
12.3 L b10 gb3x10 g OP = 0.902 V
V = ( 0.0259 ) ln M
19 16

E-5
E-4
0.634
0.814
10.7
8.6
bi
MN b1.5x10 g PQ 10 2

E-3 0.994 2.7 The zero-biased source-substrate junction width:

x =M
L 2 ∈V OP bi
1/ 2

12.30
dO
N eN Q a
One Debye length is
LM ∈akT ef OP 1/ 2
=M
L 2(11.7)b8.85x10 g(0.902) OP −14 1/ 2

LD =
N eN Q a
N b1.6x10 gb3x10 g Q −19 16

or

=M
L(11.7)b8.85x10 g(0.0259) OP −14 1/ 2
x dO = 0.197 µm

N b1.6x10 gb10 g Q −19 16 The Debye length is

or

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

LD
L ∈akT ef OP
=M
1/ 2
L = xdO + 6 LD + xd

N eN Q a or
= 0.354 + 0.142 + 0.584

L(11.7)b8.85x10 g(0.0259) OP
=M
−14 1/ 2 L = 1.08 µm

N b1.6x10 gb3x10 g Q −19 16

12.33
or
(a) φ fp = (0.0259 ) ln
FG 2 x10 IJ = 0.306 V
15

H 15. x10 K
−6
LD = 2.36 x10 cm 10

so that
b
6 LD = 6 2.36 x10
−6
g = 0.142 µm and
FG E + φ IJ = −F 112. + 0.306I
φ ms = −
H 2e K H2 K
g
Now fp

x dO + 6 LD + xd = L
or
We have for VDS = 5 V ,
φ ms = −0.866 V

xd =
LM a f OP
2 ∈ Vbi + VDS
1/ 2
Also
N eN Q a
x dT
L 4 ∈φ OP
=M
fp
1/ 2

=M
L 2(11.7)b8.85x10 g(0.902 + 5) OP −14 1/ 2
N eN Q a

N b1.6x10 gb3x10 g Q −19 16

L 4(11.7)b8.85x10 g(0.306) OP
=M
−14 1/ 2

or
x d = 0.505 µm
N b1.6x10 gb2 x10 g Q −19 15

or
Then x dT = 0.629 µm
L = 0.197 + 0.142 + 0.505
Now
or
L = 0.844 µm QSD ′ ( max) = eN a x dT
b
= 1.6 x10
−19
gb2 x10 gb0.629 x10 g
15 −4

12.32 or
With a source-to-substrate voltage of 2 volts, ′ ( max ) = 2.01x10 C / cm −8 2
QSD

x dO =
LM 2 ∈aV + V f OP 1/ 2
We have
b g gb
bi SB

N eN Q a
QSS′ = 2 x10 1.6 x10
11 −19 −8
= 3.2 x10 C / cm
2

L 2(11.7)b8.85x10 g(0.902 + 2) OP
=M
−14 1/ 2 Then
F t IJ + φ + 2φ
N b1.6x10 gb3x10 g Q V = a Q ′ ( max) − Q ′ fG
H∈ K
−19 16 ox
T SD SS ms fp

or ox

x dO = 0.354 µm b2.01x10 − 3.2 x10 gb650x10 g

−8 −8 −8

(3.9)b8.85x10 g
=
We have 6 LD = 0.142 µm from the previous −14

problem. −0.866 + 2(0.306)

Now

xd
L 2 ∈aV + V + V f OP
=M bi DS SB
1/ 2
which yields
VT = −0.478 V
N eN Q a (b) We need a shift in threshold voltage in the

L 2(11.7)b8.85x10 g(0.902 + 5 + 2) OP
=M
−14 1/ 2 positive direction, which means we must
add acceptor atoms. We need
N b1.6x10 gb3x10 g Q −19 16
∆VT = +0.80 − ( −0.478) = 1.28 V
Then
or
x d = 0.584 µm
Then

193
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

a∆V fC (1.28)(3.9) 8.85x10 −14 b g ∆VT = −0.50 − ( −3.74 ) = 3.24 V

DI = =
b1.6x10 gb650 x10 g
T ox
−19 −8 Now

or
e
a∆V fC (3.24)(3.9) 8.85x10 −14 b g
DI = =
b1.6x10 gb750 x10 g
T ox
−19 −8
DI = 4.25x10 cm
11 −2 e
or
−2
DI = 9.32 x10 cm
11
12.34

(a) φ fn = (0.0259 ) ln
FG 10 IJ = 0.347 V 16

H 15. x10 K 10 12.35

F 10 IJ = 0.288 V
(a) φ = (0.0259 ) lnG
15
and
F E − φ IJ
= φ′ − G χ′ +
fp
H 15. x10 K 10

φ ms
H 2e K
g
ms fn and

= 3.2 − (3.25 + 0.56 − 0.347 ) L 4 ∈φ OP

x =M
fp
1/ 2

or N eN Q
dT
a
φ ms = −0.263 V
Also L 4(11.7)b8.85x10 g(0.288) OP
=M
−14
1/ 2

L 4 ∈φ OP
=M
fn
1/ 2
N b1.6x10 gb10 g Q −19 15

x dT
N eN Q d
or
x dT = 0.863 µm
L 4(11.7)b8.85x10 g(0.347) OP
=M
−14 1/ 2
Now

N b1.6x10 gb10 g Q −19 16 QSD ′ ( max) = eN a x dT

b
= 1.6 x10
−19
gb10 gb0.863x10 g
15 −4
or
x dT = 0.30 µm or
Now ′ ( max ) = 1.38 x10 C / cm
QSD
−8 2

QSD ′ ( max) = eN d xdT Also

b
= 1.6 x10
−19
gb10 gb0.30x10 g
16 −4

Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
or t ox 750 x10
−8

QSD′ ( max) = 4.8 x10 −8 C / cm 2 or

We have Cox = 4.6 x10
−8
F / cm
2

b
QSS′ = 5x10 1.6 x10
11
g
−19
gb −8
= 8 x10 C / cm
2
Then
Now ′ ( max)
QSD
F t IJ + φ − 2φ
V = −a Q ′ ( max) + Q ′ fG
VT = VFB + 2φ fp +
Cox
H∈ K
ox
T SD SS ms fn
−8
1.38 x10
= −1.50 + 2(0.288) +
ox

−b4.8 x10 + 8 x10 gb750 x10 g

−8 −8 −8 −8
4.6 x10
(3.9)b8.85x10 g
= −14 or
VT = −0.624 V
−0.263 − 2(0.347 )
(b)
which becomes
Want VT = +0.90 V , which is a positive shift and
VT = −3.74 V
we must add acceptor atoms.
(b) ∆VT = 0.90 − ( −0.624 ) = 152
. V
We want VT = −0.50 V . Need to shift VT in the Then
positive direction which means we need to add
acceptor atoms. D =
I
a∆V fC T ox
=
b
(1.52) 4.6 x10 −8 g
−19
So e 1.6 x10

194
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 12
Solutions Manual Problem Solutions

or
DI = 4.37 x10 cm
11 −2 11.37
(c) F 10 IJ = 0.407 V
(a) φ = (0.0259 ) lnG
17

With an applied substrate voltage,

fn
H 15. x10 K 10

2e ∈ N a and
∆VT =
Cox
2φ fp + VSB − 2φ fp
L 4(11.7)b8.85x10 g(0.407) OP
x =M
−14 1/ 2

=
b
2 1.6 x10
−19
g(11.7)b8.85x10 gb10 g −14 15 1/ 2
N b1.6x10 gb10 g Q
dT −19 17

−8 or
4.6 x10 −5
x dT = 1.026 x10 cm
× 2(0.288) + 2 − 2(0.288)
+
n poly on n ⇒ φ ms = −0.32 V
or
We have
∆VT = +0.335 V
Then the threshold voltage is
b
′ ( max) = 1.6 x10 −19 1017 1.026 x10 −5
QSD gb gb g
VT = +0.90 + 0.335 or
or ′ ( max ) = 1.64 x10 C / cm
QSD
−7 2

VT = 1.24 V Now
VTP = −1.64 x10 − 1.6 x10
−7
b −19
gb5x10 g10

12.36 b80x10 g − 0.32 − 2(0.407)

−8

(3.9)b8.85x10 g
The total space charge width is greater than x I , × −14

so from chapter 11,

or
2e ∈ N a
∆VT = 2φ fp + VSB − 2φ fp VTP = −153
. V , Enhancement PMOS
Cox
Now (b)
F 10 IJ = 0.228 V
= (0.0259 ) lnG
14
For VT = 0 , shift threshold voltage in positive
φ fp
H 15. x10 K 10 direction, so implant acceptor ions
eDI ∆VT Cox a f
and ∆VT = ⇒ DI =
∈ (3.9)b8.85x10 g −14
Cox e
Cox = =
ox
−8 so

or
t ox 500 x10
(153 b g
. )(3.9 ) 8.85 x10
−14

Cox = 6.90 x10

−8
F / cm
2
DI =
b80x10 gb1.6x10 g
−8 −19

Then or

∆VT =
b
2 1.6 x10
−19
g(11.7)b8.85x10 gb10 g −14 14 1/ 2
DI = 4.13 x10 cm
12 −2

−8
6.90 x10
12.38
× 2(0.228) + VSB − 2(0.228) Shift in negative direction means implanting
or donor ions. We have
∆VT = 0.0834 0.456 + VSB − 0.456 eDI
∆VT =
Then Cox
VSB (V ) ∆VT (V ) where

1 0.0443 Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
3 0.0987 t ox 400 x10
−8

5 0.399
or
−8
Cox = 8.63 x10
2
F / cm

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Solutions Manual Problem Solutions

Now 12.41

DI =
Cox ∆VTa f = b8.63x10 g(1.4) −8

−19
We have the areal density of generated holes as
a f
= ( g )(γ ) t ox where g is the generation rate
e 1.6 x10
and γ is the dose. The equivalent charge
or
DI = 7.55 x10 cm
11 −2 trapped is = xgγ t ox .
Then

12.39
The areal density of generated holes is
Q′
∆VT = − SS = −
Cox a
exgγ t ox
f
∈ox t ox
a f
= − exgγ t ox
2

b
= 8 x10 gb10 gb750 x10 g = 6x10 cm
12 5 −8 12 −2
so that
∆V ∝− at f
2
The equivalent surface charge trapped is
= ( 0.10)b6 x10 g = 6 x10 cm
T ox
12 11 −2

Then
Q′ b6x10 gb1.6x10 g b750x10 g 11 −19
−8

(3.9)b8.85x10 g
∆V = −
T
=− SS
−14
C ox

or
∆VT = −2.09 V

12.40
The areal density of generated holes is
12 −2
6 x10 cm . Now

Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
−8
t ox 750 x10
or
−8
Cox = 4.6 x10
2
F / cm
Then

∆VT = −
QSS′
=−
b6x10 g( x)b1.6x10 g12 −19

−8
Cox 4.6 x10
For ∆VT = −0.50 V
Where the parameter x is the maximum fraction
of holes that can be trapped. Then we find
x = 0.024 ⇒ 2.4%

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 13
Solutions Manual Problem Solutions

Chapter 13
Problem Solutions (iii) For VGS = 1 V , VDS = −5 V
a − h = −0.045 µm
13.1 which implies no undepleted region.
Sketch
13.4
13.2 p-channel JFET – GaAs
Sketch (a)

13.3
2
2a N a b
2 0.5 x10 g b3x10 g
−4 2 16

. )b8.85 x10 g
VPO = =
p-channel JFET – Silicon 2(131
−14
2∈
(a)
2
ea N a b1.6x10 gb0.5x10 g b3x10 g
−19 −4 2 16
or
VPO = 5.18 V
2(11.7 )b8.85 x10 g
VPO = = −14
2∈ Now
or
Vbi = ( 0.0259 ) ln
LM b5x10 gb3x10 g OP
18 16

VPO = 5.79 V
Now
MN b1.8x10 g PQ 6 2

Vbi
L b5x10 gb3x10 g OP
= ( 0.0259 ) ln M
18 16
or
Vbi = 1.35 V
MN b1.5x10 g PQ 10 2
so
VP = VPO − Vbi = 5.18 − 1.35
or
Vbi = 0.884 V or
so VP = 3.83 V
VP = VPO − Vbi = 5.79 − 0.884 (b)
or L 2 ∈aV − V
a−h = a−M bi DS
+ VGS f OP 1/ 2

(b)
VP = 4.91 V
N eN a Q
For VGS = 1 V , VDS = 0
L 2 ∈aV − V
a−h = a−M bi DS
+ VGS f OP 1/ 2
(i)
Then
N eN a Q a − h = 0.5 x10
−4

(i)
For VGS = 1 V , VDS = 0
L 2(131. )b8.85x10 ga1.35 + 1 − V f OP
−M
−14
DS
1/ 2

Then N b1.6x10 gb3x10 g Q −19 16

a − h = 0.5 x10
−4 or

L 2(11.7)b8.85x10 ga0.884 + 1 − V f OP
−M
−14
DS
1/ 2 a − h = 0.5 x10
−4

b ga2.35 − V f 1/ 2

N b1.6x10 gb3x10 g Q
−10
−19 16 − 4.83 x10 DS

which yields
or a − h = 0.163 µm
−4
a − h = 0.5 x10
b
− 4.31x10
−10
ga1.884 − V f DS
1/ 2 (ii) For VGS = 1 V , VDS = −2.5 V
a − h = 0.016 µm
or
(iii) For VGS = 1 V , VDS = −5 V
a − h = 0.215 µm
a − h = −0.096 µm
(ii) For VGS = 1 V , VDS = −2.5 V
which implies no undepleted region.
a − h = 0.0653 µm

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13.5 −4
0.2 x10 = 0.5 x10
−4

(a) VPO =
ea N d
2

−M
L 2(131. )b8.85x10 gaV − V f OP −14
bi GS
1/ 2

2∈
b1.6x10 gb0.5x10 g b8x10 g
−19 −4 2 16 N b1.6x10 gb8x10 g Q −19 16

which can be written as

2(11.7 )b8.85 x10 g
=
. x10 aV − V f
−14
−10 −10
9 x10 = 1811 bi GS
or or
VPO = 15.5 V Vbi − VGS = 4.97 V
(b) Now
L 2 ∈aV − V f OP
a−h = a−M bi GS
1/ 2

Vbi
L b3x10 gb8x10 g OP
= ( 0.0259 ) ln M
18 16

N eN Q d MN b1.8x10 g PQ 6 2

so or
−4 −4
0.2 x10 = 0.5 x10 Vbi = 1.36 V
LM 2(11.7)b8.85x10 gaV − V f OP −14
bi GS
1/ 2
Then

N b1.6x10 gb8x10 g Q
− −19 16
VGS = Vbi − 4.97 = 1.36 − 4.97
or
or VGS = −3.61 V
= 1.618 x10 aV − V f
−10 −10
9 x10 bi GS

which yields 13.7

Vbi − VGS = 5.56 V 2
ea N a
Now (a) VPO =
L b3x10 gb8x10 g OP
= ( 0.0259 ) ln M
18 16 2∈
Vbi
MN b15. x10 g PQ 2 b1.6x10 gb0.3x10 g b3x10 g
−19 −4 2 16

. )b8.85 x10 g
10
=
2(131
−14

or
or
Vbi = 0.896 V
VPO = 1.863 V
Then
VGS = 0.897 − 5.56 ⇒ VGS = −4.66 V
Vbi = ( 0.0259 ) ln
LM b5x10 gb3x10 g OP
18 16

13.6
MN b1.8x10 g PQ 6 2

For GaAs: or
(a) Vbi = 1.352 V
ea N d
2 Then
VPO = VP = VPO − Vbi = 1.863 − 1.352
2∈
b1.6x10 gb0.5x10 g b8x10 g
−19 −4 2 16
or
VP = 0.511 V
. )b8.85 x10 g
=
2(131
−14
(b) (i)
or
a−h = a−M
L 2 ∈aV + V f OP bi GS
1/ 2

(b)
VPO = 13.8 V
N eN Q a

or
L 2 ∈aV − V f OP
a−h = a−M bi GS
1/ 2

a − h = b0.3x10 g
−4

N eN Q d
L 2(131. )b8.85x10 g(1.352) OP −14 1/ 2

−M
N b1.6x10 gb3x10 g Q −19 16

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 13
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which yields
a − h = 4.45 x10 cm
−6
(iii) For VGS = −1 V , VDS = 2 V ,
(ii) a − h = −0.0051 µm

b
a − h = 0.3x10
−4
g which implies no undepleted region

L 2(131. )b8.85x10 g(1.351 + 1) OP

−M
−14 1/ 2
13.9

N b1.6x10 gb3x10 g Q −19 16 F b5x10 gb4 x10 gI

= (0.0259 ) lnG
18 16

H b18. x10 g JK
Vbi 2
which yields 6

−6
a − h = −3.7 x10 cm or
which implies no undepleted region. Vbi = 1.359 V

13.8 L 2 ∈aV + V
a−h = a−M bi DS
− VGS f OP 1/ 2

(a) n-channel JFET – Silicon N eN Q

b1.6x10 gb0.35x10 g b4 x10 g
D
2
2
ea N d
−19 −4 16
or

2(11.7 )b8.85 x10 g

VPO = = −14 a − h = 0.35 x10
−4

2∈
or L 2(131. )b8.85x10 ga1.359 + V
−M
−14
DS
− VGS f OP 1/ 2

VPO = 3.79 V
N b1.6x10 gb4 x10 g −19 16
Q
Now −4
We want a − h = 0.05 x10 cm ,

Vbi
Lb5x10 gb4 x10 g OP
= (0.0259 ) ln M
18 16
Then
MN b15. x10 g PQ 10 2 −4
0.05 x10 = 0.35 x10
−4

or b
− 3.623 x10
−10
ga1.359 + V DS
− VGS f 1/ 2

Vbi = 0.892 V (a)

so that For VDS = 0 , we find
VP = Vbi − VPO = 0.892 − 3.79 VGS = −1125
. V
or
(b)
VP = −2.90 V
For VDS = 1 V , we find
(b)
VGS = −0.125 V

a−h = a−
LM a2 ∈ Vbi + VDS − VGS f OP 1/ 2

N eN d Q 13.10
(a)
We have

−4 I =
a f
µ n eN d Wa
2 3

a − h = 0.35 x10 P1
6∈L

−
LM 2b117. gc8.85x10 hb0.892 + V −14
DS − VGS g OP 1/ 2
(1000) b1.6 x10 gb10 g −19 16 2

MN c16. x10 hc4 x10 h −19 16

PQ =
6(11.7 )b8.85 x10 g
−14

or
b400x10 gb0.5x10 g −4 −4 3

×
b20x10 g
−4
a − h = 0.35 x10
ga0.892 + V f
−4

b
− 3.24 x10
−10
DS
− VGS
1/ 2

or
(i) For VGS = 0 , VDS = 1 V , I P1 = 1.03 mA
a − h = 0.102 µm (b)
(ii) For VGS = −1 V , VDS = 1 V , 2
ea N d
a − h = 0.044 µm VPO =
2∈

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 13
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Lb1.6x10 gb0.5x10 g b10 g OP

=M
−19 −4 2 16 (ii) For VGS = −0.265 V ⇒

MN 2(11.7)b8.85x10 g PQ −14

(iii)
I D1 ( sat ) = 0.140 mA
For VGS = −0.53 V ⇒
or
VPO = 1.93 V I D1 ( sat ) = 0.061 mA
Also (iv) For VGS = −0.795 V ⇒

Vbi = (0.0259 ) ln
LMb10 gb10 g OP
19 16 I D1 ( sat ) = 0.0145 mA

MN b15. x10 g PQ
10 2

13.11
or
Vbi = 0.874 V
LM FG V − V IJ OP 1/ 2

MN H V K PQ
g d = GO 1 1 − bi GS

Now
a f
PO

VDS ( sat ) = VPO − Vbi − VGS where

3b1.03 x10 g
−3
= 1.93 − 0.874 + VGS 3I −3
or G = O1
= P1
= 1.60 x10
VPO 1.93
VDS ( sat ) = 1.06 + VGS
or
We have
GO1 = 1.60 mS
VP = Vbi − VPO = 0.874 − 1.93
Then
or
VP = −1.06 V
VGS a
Vbi − VGS / VPO f g d ( mS )

Then
0 0.453 0.523
(i) VGS = 0 ⇒ VDS ( sat ) = 1.06 V -0.265 0.590 0.371
1 -0.53 0.727 0.236
(ii) VGS = VP = −0.265 V ⇒ -0.795 0.945 0.112
4 -1.06 1.0 0
VDS ( sat ) = 0.795 V
1
(iii) VGS = VP = −0.53 V ⇒ 13.12
2 n-channel JFET – GaAs
VDS ( sat ) = 0.53 V (a)
3 eµ n N d Wa
(iv) VGS = VP = −0.795 V ⇒ GO 1 =
4 L
VDS ( sat ) = 0.265 V
=
b1.6x10 g(8000)b2 x10 gb30x10 gb0.35x10 g
−19 16 −4 −4

−4
(c) 10 x10
I D1 ( sat ) or

L F V − V IJ FG1 − 2
= I M1 − 3G
Vbi − VGS IJ OP GO1 = 2.69 x10 S
−3

N H V KH 3 KQ
bi GS
(b)
a f
P1
VPO
PO
VDS ( sat ) = VPO − Vbi − VGS
LM F 0.874 − V I
N H 1.93 K
= 1.03 1 − 3 GS We have
2
ea N d
F 2
×G 1 −
0.874 − VGS IJ OP VPO =
2∈
H 3 1.93 KQ b1.6x10 gb0.35x10 g b2 x10 g
−19 −4 2 16

. )b8.85 x10 g
=
(i) For VGS = 0 ⇒ I D1 ( sat ) = 0.258 mA 2(131
−14

or
VPO = 1.69 V

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We find 13.13
LMb5x10 gb2 x10 g OP
18 16
3I P 1 FG1 − Vbi − VGS IJ
Vbi = (0.0259 ) ln
MN b1.8x10 g PQ 6 2
g mS =
VPO H VPO K
or We have
Vbi = 1.34 V I P 1 = 1.03 mA , VPO = 1.93 V , Vbi = 0.874 V
Then The maximum transconductance occurs when
VP = Vbi − VPO = 1.34 − 1.69 VGS = 0
or Then
VP = −0.35 V
g mS ( max) =
3(1.03) FG1 − 0.874 IJ
We then obtain 1.93 H 1.93 K
a
VDS ( sat ) = 1.69 − 1.34 − VGS = 0.35 + VGS f or
For VGS = 0 ⇒ VDS ( sat ) = 0.35 V g mS = 0.524 mS
For W = 400 µm ,
1
For VGS = VP = −0.175 V ⇒ We have
2 0.524 mS
VDS ( sat ) = 0.175 V g mS ( max) = −4
400 x10 cm
(c)
or
I D1 ( sat )
g mS = 13.1 mS / cm = 1.31 mS / mm
LM FG V − V IJ FG1 − 2 V − V IJ OP
N H V KH 3 V KQ
= I P1 1 − 3 bi GS bi GS

PO PO 13.14
where The maximum transconductance occurs for

µ aeN f Wa
2 3 VGS = 0 , so we have
I = n d
(a)
FG1 − V IJ
P1
6∈L
3I P 1
(8000) b1.6 x10 gb2 x10 g g mS ( max) =
H V K
2 bi
−19 16

VPO
. )b8.85 x10 g
= PO
6(131
FG1 − V IJ
−14

b30x10 gb0.35x10 g −4 −4 3 = GO 1
H V K
bi

×
b10x10 g
PO
−4
We found
or GO 1 = 2.69 mS , Vbi = 1.34 V , VPO = 1.69 V
I P1 = 1.51 mA Then
Then
g mS ( max) = ( 2.69) 1 −
FG 1.34 IJ
LM F 1.34 − VGS I H 1.69 K
I D 1 ( sat ) = 151
N H
. 1− 3
1.69 K or
F 2
×G 1 −
1.34 − VGS IJ OP (mA) g mS ( max) = 0.295 mS

H 3 1.69 KQ This is for a channel length of L = 10 µm .

(b)
For
If the channel length is reduced to L = 2 µm ,
VGS = 0 ⇒ I D1 ( sat ) = 0.0504 mA
then
and for
10 F I
VGS = −0.175 V ⇒ I D1 ( sat ) = 0.0123 mA g mS ( max) = ( 0.295)
2
⇒
H K
g mS ( max) = 1.48 mS

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 13
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13.15 By trial and error

n-channel MESFET – GaAs N d = 8.1x10 cm
15 −3

(a)
2 (b)
ea N d At T = 400 K ,
VPO =
2∈
F 400 I 3/ 2

b1.6x10 gb0.5x10 g b1.5x10 g

−19 −4 2 16 N (400) = N (300) ⋅
C C
H 300 K
. )b8.85 x10 g
=
2(131 = b4.7 x10 g(154
. )
−14 17

or or
VPO = 2.59 V N C (400) = 7.24 x10 cm
17 −3

Now Also
Vbi = φ Bn − φ n 400F I
where Vt = (0.0259 )
H K= 0.03453
FG N IJ = (0.0259) lnFG 4.7 x10 IJ 17
Then
300
φ n = Vt ln
HN K H 1.5x10 K
C
16

VT = 0.89 − (0.03453) ln
FG 7.24 x10 IJ 17

H 8.1x10 K
d

or 15

φ n = 0.0892 V
−b8.45x10 gb8.1x10 g
−17 15
so that
Vbi = 0.90 − 0.0892 = 0.811 V which becomes
Then VT = +0.051 V
VT = Vbi − VPO = 0.811 − 2.59
or 13.17
VT = −1.78 V We have
(b)
a−h = a−
LM 2 ∈aV + V bi DS
− VGS f OP 1/ 2

If VT < 0 for an n-channel device, the device is a

depletion mode MESFET.
N eN d Q
where
Vbi = φ Bn − φ n
13.16
Now
n-channel MESFET – GaAs
(a)
φ n = (0.0259) ln
FG 4.7 x10 IJ = 0.058 V 17

We want VT = +0.10 V H 5x10 K 16

Then Then
VT = Vbi − VPO = φ Bn − φ n − VPO Vbi = 0.80 − 0.058 = 0.742 V
so
For VGS = 0.5 V ,
V = 0.10 = 0.89 − V lnG
F N IJ − ea N 2

b g
HN K 2∈
−4
T t
C d
a − h = 0.8 x10

which can be written as

d

L 2(131. )b8.85x10 ga0.742 + V − 0.5f OP

−M
−14 1/ 2

F 4.7 x10 IJ
DS

(0.0259) lnG
17
N b1.6x10 gb5x10 g Q
−19 16

H N K or
a − h = b0.80 x10 g
d

b1.6x10 gb0.35x10 g N = 0.89 − 0.10

−19 −4 2
−4

− b2.898 x10 ga0.242 + V f

d

. )b8.85x10 g
+ 1/ 2
2(131
−14 −10
DS

or

(0.0259) lnG
F 4.7 x10 IJ + b8.45x10 g N = 0.79
17

H N K
17
d
d

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Then 0.5 = 0.85 − φ n − VPO

VDS (V ) a−h ( µm) Now
0 0.716
φ n = (0.0259) ln
FG 4.7 x10 IJ 17

1
2
0.610
0.545
H N K d

5 0.410 and
2
ea N d
VPO =
2∈
13.18
VT = Vbi − VPO = φ Bn − φ n − VPO b1.6x10 gb0.25x10 g N −19 −4 2

. )b8.85x10 g
=
2(131
−14
We want
VT = 0 ⇒ φ n + VPO = φ Bn or
V = b4.31x10 g N
−3 −17
Device 1: N d = 3 x10 cm
16
PO d

Then Then

φ n = (0.0259) ln
FG 4.7 x10 IJ = 0.0713 V
17

0.5 = 0.85 − (0.0259 ) lnG

F 4.7 x10 IJ 17

H 3x10 K 16
H N K d

−b4.31x10 g N
so that −17

VPO = 0.89 − 0.0713 = 0.8187 V d

By trial and error, we find

Now
LM 2 ∈V OP
−3
N d = 5.45 x10 cm
15
2 1/ 2
ea N d
VPO = ⇒a= PO

2∈ N eN Q d 13.20

=M
L 2(131. )b8.85x10 g(0.8187) OP −14 1/ 2
n-channel MESFET – silicon
(a) For a gold contact, φ Bn = 0.82 V .
N b1.6x10 gb3x10 g Q −19 16
We find
or
φ n = (0.0259) ln
FG 2.8x10 IJ = 0.206 V 19

a = 0.199 µm

Device 2: N d = 3 x10 cm
17 −3
H 10 K 16

and
Then Vbi = φ Bn − φ n = 0.82 − 0.206 = 0.614 V
φ n = (0.0259) ln
FG 4.7 x10 IJ = 0.0116 V
17
With VDS = 0 , VGS = 0.35 V
H 3x10 K 17
We find
so that a − h = 0.075 x10
−4

VPO = 0.89 − 0.0116 = 0.8784 V

L 2 ∈aV − V f OP
=a−M bi GS
1/ 2

Now
L 2 ∈V OP 1/ 2 N eN Q d

a=M PO so that
N eN Q d

L 2(131. )b8.85x10 g(0.8784) OP

=M
−14 1/ 2 a = 0.075 x10
−4

N b1.6x10 gb3x10 g Q −19 17 L 2(11.7)b8.85x10 g(0.614 − 0.35) OP

+M
−14 1/ 2

or
a = 0.0651 µm
N b1.6x10 gb10 g Q −19 16

or
a = 0.26 µm
13.19 Now
2
VT = Vbi − VPO = φ Bn − φ n − VPO ea N d
VT = Vbi − VPO = 0.614 −
We want VT = 0.5 V , so 2∈

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or so that
b1.6x10 gb0.26x10 g b10 g
−19 −4 2 16

Nd =
b
2(11.7 ) 8.85 x10 g(4.5)
−14

2(11.7 )b8.85 x10 g b1.6x10 gb0.4 x10 g

V = 0.614 −
T −14 −19 −4 2

We obtain or
VT = 0.092 V N d = 3.64 x10 cm
16 −3

(b) which means that

VDS ( sat ) = VPO − Vbi − VGSa f ∆N d = 3.64 x10 − 2 x10
16 16

a fa
= Vbi − VT − Vbi − VGS = VGS − VT f or
−3
Now ∆N d = 1.64 x10 cm
16

VDS ( sat ) = 0.35 − 0.092 Donors must be added

or Then
VDS ( sat ) = 0.258 V
φ n = (0.0259) ln
FG 2.8x10 IJ = 0.172 V
19

13.21
H 3.64 x10 K 16

so that
(a) n-channel MESFET - silicon
Vbi = 0.80 − 0.172 = 0.628 V
Vbi = φ Bn − φ n
We find
and

φ n = (0.0259) ln
FG 2.8x10 IJ = 0.188 V
19
VT = Vbi − VPO = 0.628 − 4.5

H 2 x10 K16
or
VT = −3.87 V
so Also

Now
Vbi = 0.80 − 0.188 ⇒ Vbi = 0.612 V VDS ( sat ) = VPO − Vbi − VGS a f
= 4.5 − ( 0.628 − ( −1))
2
ea N d or
VPO =
2∈ VDS ( sat ) = 2.87 V
b1.6x10 gb0.4 x10 g b2 x10 g
−19 −4 2 16

2(11.7 )b8.85 x10 g

= −14 13.22
µ n ∈W
or (a) k n =
VPO = 2.47 V 2 aL

We find b
(7800)(13.1) 8.85x10 −14 20 x10 −4 gb g
VT = Vbi − VPO = 0.612 − 2.47
=
b
2 0.30 x10
−4
gb1.2 x10 g −4

or or
VT = −186. V k n = 2.51 mA / V
2

and (b)
VDS ( sat ) = VPO − Vbi − VGS a f a
VDS ( sat ) = VPO − Vbi − VGS = VGS − VT f
= 2.47 − (0.612 − ( −1)) So for VGS = 15 . VT ⇒ VDS ( sat ) = (0.5)(0.12 )
or Or
VDS ( sat ) = 0.858 V VDS ( sat ) = 0.06 V
(b) and for VGS = 2VT ⇒ VDS ( sat ) = (1)( 0.12)
For VPO = 4.5 V , additional donor atoms must be
or
added. VDS ( sat ) = 0.12 V
We have
(c)
2 ∈VPO
2

VPO =
ea N d
2∈
⇒ Nd =
ea
2 a
I D 1 ( sat ) = k n VGS − VT f 2

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For VGS = 1.5VT ⇒ I D 1 ( sat ) = (2.51)(0.06)

2
L′ 1 ∆L
= 0.90 = 1 − ⋅
Or L 2 L
I D1 ( sat ) = 9.04 µA We have

and for VGS = 2VT ⇒ I D 1 ( sat ) = (2.51)(0.12 )

2 L 2 ∈aV − V
∆L = M DS DS
( sat ) f OP 1/ 2

or N eN d Q
I D1 ( sat ) = 36.1 µA and
For VGS = 0 , VDS ( sat ) = VPO − Vbi
13.23 We find
2
(a) We have ea N d
a
g m = 2 k n VGS − VT f VPO =
2∈
so that
1.75 x10 = 2 k n (0.50 − 0.25)
−3 b1.6x10 gb0.4 x10 g b3x10 g
−19 −4 2 16

2(11.7 )b8.85x10 g
= −14
which gives
−3 µ ∈W or
k n = 3.5 x10 A / V = n
2
VPO = 3.71 V
2 aL
We obtain and
b3.5x10 g(2)b0.35x10 gb10 g
−3 −4 −4

Vbi
L b10 gb3x10 g OP
= (0.0259 ) ln M
19 16

. )b8.85 x10 g
W=
(8000)(131 −14
MN b15. x10 g PQ 10 2

or or
W = 26.4 µm Vbi = 0.902 V
(b) so that
a
I D 1 ( sat ) = k n VGS − VT f 2
VDS ( sat ) = 3.71 − 0.902 = 2.81 V
Then
For VGS = 0.4 V ,
b
I D1 ( sat ) = 3.5 x10
−3
g(0.4 − 0.25) 2 L 2(11.7)b8.85x10 g(5 − 2.81) OP
∆L = M
−14
1/ 2

or N b1.6x10 gb3x10 g Q −19 16

I D1 ( sat ) = 78.8 µA or
∆L = 0.307 µm
For VGS = 0.65 V ,
Now
b
I D1 ( sat ) = 3.5 x10
−3
g(0.65 − 0.25) 2
L′
= 0.90 = 1 − ⋅
1 ∆L
or L 2 L
I D1 ( sat ) = 0.56 mA or
1 ∆L
⋅ = 1 − 0.9 = 0.10
13.24 2 L
Computer plot so
−4
∆L 0.307 x10
L= =
13.25 2(0.10) 2(0.10)
Computer plot or
L = 1.54 µm
13.26
1
We have L ′ = L − ∆L
2
Or

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 13
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13.27 13.28
FG L IJ (a) Saturation occurs when Ε = 1x10 V / cm
4

We have that I D′ 1 = I D1
H L − a1 2f∆L K As a first approximation, let
V
Assuming that we are in the saturation region, Ε = DS
then I D′ 1 = I D′ 1 ( sat ) and I D 1 = I D1 ( sat ) . We can L
write Then

I D′ 1 ( sat ) = I D1 ( sat ) ⋅
1 VDS = Ε ⋅ L = 1x10 b gb2 x10 g4 −4

1 ∆L or
1− ⋅
2 L VDS = 2 V
If ∆L << L , then (b)
1 ∆L
I D′ 1 ( sat ) = I D1 ( sat ) 1 + ⋅
LM OP We have that
2 L N Q h =h =M
L 2 ∈aV + V − V f OP bi DS GS
1/ 2

We have that
L 2 ∈aV − V (sat )f OP 1/ 2
2
N eN sat
Q d

∆L = M
and
Lb5x10 gb4 x10 g OP
DS DS

N eN Q d
V = (0.0259 ) ln M
18 16

=M
L 2 ∈V FG1 − V (sat )IJ OP 1/ 2 bi
MN b15. x10 g PQ 10 2

N eN H V K Q
DS DS

d DS
or
which can be written as Vbi = 0.892 V

∆L = V M
L 2 ∈ FG1 − V (sat )IJ OP 1/ 2
For VGS = 0 , we obtain

N eN V H V K Q L 2(11.7)b8.85x10 g(0.892 + 2) OP
DS
DS −14 1/ 2

=M
d DS DS

N b1.6x10 gb4 x10 g Q

If we write hsat −19

I ′ ( sat ) = I ( sat )a1 + λV f

16

D1 D1 DS
or
then by comparing equations, we have
hsat = 0.306 µm
1 L 2 ∈ F V ( sat ) I O
1/ 2

λ= M G1 − V JK PQ
2 L N eN V H
DS (c)
We then find
d DS

The parameter is not independent of VDS . Define

DS
a
I D 1 ( sat ) = eN d v sat a − hsat W f
x=
VDS b
= 1.6 x10
−19
gb4 x10 gb10 g(0.50 − 0.306)
16 7

×b10 gb30 x10 g

and consider the function
VDS ( sat ) −4 −4

1F1 − 1 I which is directly proportional to or

xH xK
f =
I D1 ( sat ) = 3.72 mA
λ . We find that (d)
x f ( x) For VGS = 0 , we have
1..5 0.222 LM FG V
I D 1 ( sat ) = I P 1 1 − 3
IJ FG1 − 2 Vbi IJ OP
N HV KH 3 KQ
bi
1.75 0.245
VPO
2.0 0.250 PO

2.25 0.247 Now

2.50 0.240 µ aeN f Wa
2 3

2.75 0.231 I = P1
n d

3.0 0.222 6∈L

So that λ is nearly a constant.

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 13
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b
(1000) 1.6 x10 −19 4 x1016 gb g 2
F 2I ⇒
=
b
6(11.7 ) 8.85 x10
−14
g
I D1 ( sat ) = 9.08
H 1K I D1 ( sat ) = 18.2 mA

(b)
b 30 x10
−4
gb 0.5 x10
−4
g 3
If velocity saturation occurs, then the relation
a f
×
b2 x10 g −4 I D1 ( sat ) ∝ 1 L does not apply.

or
13.30
I P1 = 12.4 mA (a)
Also
2
ea N d
v = µ n Ε = (8000) 5x10 b g = 4 x10 cm / s
3 7

VPO = Then
2∈ L 2 x10
−4

b1.6x10 gb0.5x10 g b4 x10 g

−19 −4 2 16 td =
v
=
4 x10
7
⇒

2(11.7 )b8.85 x10 g

= −14
or
t d = 5 ps
or
VPO = 7.73 V (b)
Assume v sat = 10 cm / s
7
Then
LM F 0.892 I FG1 − 2 0.892IJ OP Then
I D1 ( sat ) = 12.4 1 − 3
N H 7.73 K H 3 7.73 K Q
−4
L 2 x10
td = = 7
⇒
or v sat 10
I D1 ( sat ) = 9.08 mA t d = 20 ps

13.29 13.31
(a) If L = 1 µm , then saturation will occur
when
(a) v = µ n Ε = (1000) 10 b g = 10 cm / s
4 7

VDS = Ε ⋅ L = 10 b gb1x10 g = 1 V
4 −4
td =
L
v
=
2 x10
10
7
−4

⇒ t d = 20 ps
We find

h2 = hsat
L 2 ∈aV + V − V f OP
=M bi DS GS
1/ 2 (b)
For v sat = 10 cm / s ,
7

N eN Q d
L 2 x10
−4

We have Vbi = 0.892 V and for VGS = 0 , we td = = 7

⇒ t d = 20 ps
v sat 10
obtain
L 2(11.7)b8.85x10 g(0.892 + 1) OP
=M
−14 1/ 2

13.32
N b1.6x10 gb4 x10 g Q
hsat −19 16 The reverse-bias current is dominated by the
generation current. We have
or
VP = Vbi − VPO
hsat = 0.247 µm
We find
Then
I D 1 ( sat ) = eN d v sat a − hsat W a f Vbi = ( 0.0259 ) ln
LM b5x10 gb3x10 g OP
18 16

b
= 1.6 x10
−19
gb4 x10 gb10 g(0.50 − 0.247)
16 7
MN b1.5x10 g PQ 10 2

×b10 gb30 x10 g

−4 −4 or
Vbi = 0.884 V
or and
I D1 ( sat ) = 4.86 mA 2
ea N d
If velocity saturation did not occur, then from the VPO =
previous problem, we would have 2∈

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 13
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b1.6x10 gb0.3x10 g b3x10 g

−19 −4 2 16 (b)
For VDS = 1 V ⇒ I DG = 0.42 pA
2(11.7 )b8.85 x10 g
= −14

(c)
or For VDS = 5 V ⇒ I DG = 0.50 pA
VPO = 2.09 V
Then
13.33
VP = 0.884 − 2.09 = −1.21 = VGS
(a) The ideal transconductance for VGS = 0 is
Now
L 2 ∈aV + V − V f OP 1/ 2 FG Vbi IJ
x =M
n
N eN
bi

Q
DS

d
GS g mS = GO1 1 −
H VPO K
where

=M
L 2(11.7)b8.85x10 ga0.884 + V − (−1.21)f OP
−14
DS
1/ 2

GO 1 =
eµ n N d Wa

N b1.6x10 gb3x10 g −19

Q 16
L
or b1.6x10 g(4500)b7 x10 g
−19 16

x = b4.31x10 ga2.09 + V f
−10 1/ 2 = −4
15
. x10
× b5x10 gb0.3 x10 g
n DS
−4 −4
(a)
For VDS = 0 ⇒ , x n = 0.30 µm or
(b) GO1 = 5.04 mS
For VDS = 1 V ⇒ , x n = 0.365 µm We find
(c) 2
ea N d
For VDS = 5 V ⇒ x n = 0.553 µm VPO =
2∈
The depletion region volume is
L F I af b1.6x10 gb0.3x10 g b7 x10 g
−19 −4 2 16

Vol = (a )
2 H K
(W ) + xn (2a )(W ) =
. )b8.85x10 g
2(131
−14

b gFGH 2.4 x210 IJK b30x10 g or

−4
−4 −4
= 0.3 x10 VPO = 4.35 V

+a x fb0.6 x10 gb30 x10 g

We have
n
−4 −4

F 4.7 x10 IJ = 0.049 V

= (0.0259 ) lnG
17

or
Vol = 10.8 x10 + x b18 x10 g
−12 −8
φn
H 7 x10 K 16

n
so that
(a) Vbi = φ Bn − φ n = 0.89 − 0.049 = 0.841 V
−11
For VDS = 0 ⇒ Vol = 1.62 x10
3
cm Then
(b) FG 0.841 IJ
For VDS = 1 V ⇒ Vol = 1.74 x10
(c)
−11
cm
3 g mS = 5.04 1 −
H 4.35 K
−11
or
For VDS = 5 V ⇒ Vol = 2.08 x10
3
cm g mS = 2.82 mS
The generation current is

I = eG
F n IJ ⋅Vol = b1.6x10 gb15. x10 g ⋅Vol −19 10
(b)
With a source resistance
H 2τ K 2b5 x10 g
i
DG −8
gm g′ 1
O
g m′ = ⇒ m =
or 1 + g m rs g m 1 + g m rs
I = b2.4 x10 g ⋅ Vol
−2
DG
For
(a) g m′ 1
= 0.80 =
For VDS = 0 ⇒ I DG = 0.39 pA gm 1 + (2.82 )rs

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 13
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which yields 13.35

rs = 88.7 Ω (a) For a constant mobility
eµ n N d a
2
(c)
fT =
ρL L L 2π ∈ L
2

rs =
A aeµ nfb0.3x10 gb5x10 g
=
σA
=
n
−4 −4

=
b1.6x10 g(5500)b10 gb0.25x10 g
−19 17 −4 2

. )b8.85 x10 gb10 g

so
2π (131
−14 −4 2

L = (88.7)b1.6 x10 g(4500)b7 x10 g

−19 16

or
×b0.3x10 gb5x10 g
−4 −4
f T = 755 GHz
or (b)
L = 0.67 µm Saturation velocity model:
v
f T = sat
13.34 2πL
gm Assuming v sat = 10 cm / s , we find
7

fT =
2πCG 10
7

where
∈ WL
fT =
b g
2π 10
−4

CG = or
a f T = 15.9 GHz

=
(131 b
. ) 8.85 x10
−14 −4
5 x10 15. x10
−4
gb gb g
−4
0.3 x10 13.36
or ∆E C
CG = 2.9 x10
−15
F (a) Voff = φ B − − VP 2
e
We must use g m′ , so we obtain where
b2.82 x10 g(0.80) = 124 GHz
−3

VP 2 =
eN d d d
2

2π b2.9 x10 g
fT = −15 2 ∈N
We have b1.6x10 gb3x10 gb350x10 g
−19 18 −8 2

2(12.2 )b8.85 x10 g

1 1 1 = −14
⇒ τC =
fT =
2πτ C 2πf T
=
b
2π 124 x10
9
g or
or VP 2 = 2.72 V
−12
τ C = 1.28 x10 s Then
The channel transit time is Voff = 0.89 − 0.24 − 2.72
−4
. x10
15 −11 or
tt = = 1.5 x10 s
10
7 Voff = −2.07 V
The total time constant is (b)
−11 −12 −11
τ = 1.5x10 + 1.28 x10 = 1.63x10
so that
s
nS =
∈N
e(d + ∆d )
bV − V g
g off

1 1
fT = =
2πτ 2π 1.63 x10
−11
b g For Vg = 0 , we have
(12.2) 8.85x10 −14b g
or (2.07)
f T = 9.76 GHz
nS =
b1.6x10 −19
g(350 + 80) ⋅ 10 −8

or
−2
nS = 3.25 x10 cm
12

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 13
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13.37 13.38
(a) We have ∆E C
Voff = φ B − − VP 2
I D ( sat ) =
∈N W
( d + ∆d )
bV − V g off
− VO v sg We want Voff
e
= −0.3 V , so
We find
−0.30 = 0.85 − 0.22 − VP 2
F I = ∂ LM I (sat ) OP = ∈ v
g mS
H W K ∂V N W Q (d + ∆d )
g
D N s
or
eN d d d
2

(12.2)b8.85x10 gb2 x10 g −14 7 VP 2 = 0.93 V =

S 2 ∈N
= = 5.02
(350 + 80) ⋅ 10 −8
cm We can then write
or 2 ∈N VP 2
dd =
2

g mS mS eN d
= 502
W mm b
2(12.2 ) 8.85x10 g(0.93)
−14

(b)
At Vg = 0 , we obtain
=
b1.6x10 −19
gb2 x10 g 18

We then obtain
I D ( sat )
W
=
( d + ∆d )
b−V − V gv
∈N
off O S
−6
d d = 2.51x10 cm = 251 A
°

(12.2)b8.85x10 g −14

= (2.07 − 1)b2 x10 g 7

(350 + 80) ⋅ 10 −8

or
I D ( sat )
= 5.37 A / cm = 537 mA / mm
W

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 14
Solutions Manual Problem Solutions

Chapter 14
Problem Solutions 14.3
αI ( x )
g′ =
14.1 hν
1.24 1.24
(a) λ = µm For hν = 1.3 eV ⇒ λ = = 0.95 µm
E 1.3
Then −1
For silicon, α ≈ 3 x10 cm ,
2

Ge: E g = 0.66 eV ⇒ λ = 1.88 µm

Then for
. eV ⇒ λ = 111
Si: E g = 112 . µm
I ( x ) = 10 W / cm
−2 2

GaAs: E g = 1.42 eV ⇒ λ = 0.873 µm we obtain

(b)
g′ =
b3x10 gb10 g ⇒ 2 −2

E=
λ
1.24
b1.6x10 g(1.3) −19

g ′ = 1.44 x10 cm s
19 −3 −1

For λ = 570 nm ⇒ E = 2.18 eV

The excess concentration is
For λ = 700 nm ⇒ E = 1.77 eV
δn = g ′τ = 1.44 x10 10 ⇒
19 −6
b gb g
−3
δn = 1.44 x10 cm
13
14.2
(a) GaAs
hν = 2 eV ⇒ λ = 0.62 µm
14.4
so −7
−1
n-type GaAs, τ = 10 s
α ≈ 15
4
. x10 cm
(a)
Then We want
I ( x)
= exp( −αx ) = exp − 1.5 x10 b 4
gb0.35x10 g
−4 δn = δp = 10 cm = g ′τ = g ′ 10
15 −3 −7
b g
IO or
or 10
15

g′ =
−3 −1
= 10 cm s
22
I ( x) −7
= 0.59 10
IO We have
so the percent absorbed is (1-0.59), or 1.24
hν = 1.9 eV ⇒ λ = = 0.65 µm
41% 1.9
(b) Silicon so that
Again hν = 2 eV ⇒ λ = 0.62 µm −1
α ≈ 1.3x10 cm
4

So
−1
Then
α ≈ 4 x10 cm
3
αI ( x ) ( g ′ )(hν )
Then g′ = ⇒ I ( x) =
hν α
I ( x)
IO
= exp( −αx ) = exp − 4 x10 b 3
gb0.35x10 g−4

=
b10 gb1.6x10 g(1.9)
22 −19

4
1.3 x10
or
or
I ( x)
I (0) = 0.234 W / cm = I O
2
= 0.87
IO
(b)
so the percent absorbed is (1-0.87), or I ( x)
13%
IO
= 0.20 = exp − 1.3 x10 x b 4
g
We obtain x = 1.24 µm

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 14
Solutions Manual Problem Solutions

where L p = Dpτ p
2

14.5
GaAs The photon flux in the semiconductor is
(a) Φ( x ) = Φ O exp( −αx )
For hν = 1.65 eV ⇒ λ = 0.75 µm and the generation rate is
So G L = αΦ( x ) = αΦ O exp( −αx )
−1
α ≈ 0.7 x10 cm
4
so we have
For 75% obsorbed, d δpn
2
a f − δp n
=−
αΦ O
exp( −αx )
I ( x) dx
2
Lp
2
Dp
= 0.25 = exp( −αx )
IO The general solution is of the form
Then FG − x IJ + B expFG + x IJ
1F I 1 1 F I δpn = A exp
HL K HL K
αx = ln
H K
0.25
⇒x=
0.7 x10
4
ln
0.25 H K p p

or
x = 1.98 µm
−
αΦ Oτ p
α Lp − 1
2 2
a f
exp −α x

(b) At x → ∞ , δpn = 0
For 75% transmitted,
So that B = 0 , then
I ( x)
= 0.75 = exp − 0.7 x10 x
4
b g FG − x IJ − αΦ τ exp(−αx)
δpn = A exp
H L K α L −1
O p
IO 2 2

we obtain p p

x = 0.41 µm At x = 0 , we have

Dp
d δpn a f = sδpn
14.6 dx x = 0 x=0
GaAs so we can write
−4
For x = 1 µm = 10 cm , we have 50% absorbed αΦ Oτ p
δpn = A − 2 2
or 50% transmitted, then x =0 α Lp − 1
I ( x) and
= 0.50 = exp( −αx )
IO
We can write
a f
d δpn
=−
A
+
α Φ Oτ p
2

FI F I F I α Lp − 1
2 2
dx x=0 Lp
1 1 1
α=
xHK H K H K
⋅ ln
0.5
=
10
−4
⋅ ln(2 ) Then we have
AD p α Φ Oτ p D p
2
sαΦ Oτ p
or − + = sA −
α Lp − 1 α Lp − 1
2 2 2 2
α = 0.69 x10 cm
4 −1 Lp
This value corresponds to Solving for A , we find
λ = 0.75 µm , E = 1.65 eV LM s + αD OP
αΦ Oτ p
α L − 1 N s + bD L gQ
p
A= 2 2
⋅
p p p
14.7 The solution can now be written as
The ambipolar transport equation for minority
carrier holes in steady state is αΦ τ R s + αD ⋅ expFG − x IJ
⋅S
a f + G − δp δp =
HL K
O p p

α L − 1 T s + bD L g
n
d δpn
2 2 2

Dp n
=0 p p p p

or
dx
2 L
τp − exp( −αx ) r
d δpn
2
a f − δp
2 2
n
=−
GL
dx Lp Dp

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14.8
We have 14.9
d δn p
2
b g + G − δn FG IJ JL
H
J K
VOC = Vt ln 1 +
p
Dn L
=0
τn
2
dx S

or F 30x10 IJ
= (0.0259 ) lnG 1 +
−3

d δn p
2
b g − δn2 2
p
=−
GL H J K S

dx Ln Dn where
where Ln = Dnτ n
2

J = en M
L 1 ⋅ D + 1 ⋅ D OP
2 n p

The general solution can be written in the form

F xI F xI
S

NN τ N τ Q
i
a n d p

= A coshG J + B sinhG J + G τ which becomes

δn p
HL K HL K n n
L n

J = b1.6 x10 gb1.8 x10 g

S
−19 6 2

For s = ∞ at x = 0 means that δn p (0) = 0 ,

Then ×M
L 1 ⋅ 225 + 1 ⋅ 7 OP
0 = A + G L τ n ⇒ A = − G Lτ n N N 5x10 10 5x10 Q
a
−8 19 −8

At x = W , or
d δn p b g J = b5.18 x10 g M
L 6.7 x10 + 118. x10 OP
−7
4
−15
− Dn
dx x =W
= soδn p
x =W
S
N N Q a

Now Then
FG W IJ + B sinhFG W IJ + G τ
δn p (W ) = − G L τ n cosh
N J b A / cm g V (V ) 2

HL K HL K
a S OC
L n
n n 1E15 3.47E-17 0.891
and 1E16 3.47E-18 0.950
d bδn g F W I B coshFG W IJ 1E17 3.48E-19 1.01
sinhG J +
Gτ
HL K L HL K 1E18 3.53E-20 1.07
p
=− L n

dx Lx =W n n n n

so we can write
Gτ D F W I BD coshFG W IJ
sinhG J −
14.10
HL K L HL K
L n n n
(a)
L n n n n
I L = J L ⋅ A = 25x10 b
g(2) = 50 mA −3

FWI
= s − G τ coshG J We have
HL K
o L n
L 1 ⋅ D + 1 ⋅ D OP
J = en M
n

FWI
2 n p

+ B sinhG J + G τ
HL K L n
S

NN τ N τ Q
i
a n d p

n or
Solving for B, we find J = b1.6 x10 gb15
. x10 g
−19 10 2

B= L 1 ⋅ 18 + 1 ⋅ 6 OP
×M
LM FG W IJ + s τ coshFG W IJ − s τ OP N 3x10 5x10 10 5x10 Q
16 −6 19 −7

N
G L Ln sinh
HL K HL K Q o n o n
which becomes
FWI FWI
n n

coshG J + s sinh G J
−12
D J S = 2.29 x10 A / cm
2

HL K HL K
n
o
L n n n
or
−12
The solution is then I S = 4.58 x10 A
L F x IO F x I
δn = G τ M1 − coshG J P + B sinhG J
We have
p
N H L KQ H L K
L n
LM F V I − 1OP
N GH V JK Q
n n
I = I L − I S exp
where B was just given.

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 14
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or
LMexpFG V IJ − 1OP LM1 + V OP ⋅ expFG V IJ = 1 + I
N V Q HV K I
m m L

N HV K Q
−3 −12
I = 50 x10 − 4.58 x10 t t S

t −3
500 x10
= 1+ = 1.092 x10
11
We see that when I = 0 , V = VOC = 0.599 V . −12
4.58 x10
We find By trial and error, we find
V (V ) I (mA) Vm = 0.577 V
0 50 and the current at the maximum power point is
0.1 50 I m = 478.3 mA
0.2 50
0.3 50 The maximum power is then
0.4 49.9 Pm = I mVm = 276 mW
0.45 49.8 The maximum power has increased by a factor
0.50 48.9 of 11.1 compared to the previous problem, which
0.55 42.4 means that the efficiency has increased slightly.
0.57 33.5
0.59 14.2
14.12
(b)
Let x = 0 correspond to the edge of the space
The voltage at the maximum power point is
charge region in the p-type material. Then
found from
LM1 + V OP ⋅ expFG V IJ = 1 + I Dn
2
b g − δn
d δn p p
= −GL
N V Q HV K I
m m L
τn
2
dx
t t S
or
b g − δn
−3
50 x10
d δn p
2
= 1+ = 1.092 x10
10
p GL
4.58 x10
−12
2 2
=−
By trial and error, dx Ln Dn
Vm = 0.520 V where
G L = α Φ( x ) = α Φ O exp( −αx )
At this point, we find
I m = 47.6 mA Then we have

so the maximum power is d δn p

2
b g − δn exp( −αx )
p
=−
αΦ O
Pm = I mVm = (47.6)(0.520)
2 2
dx Ln Dn
or The general solution is of the form
Pm = 24.8 mW FG − x IJ + B expFG + x IJ
(c)
We have
δn p = A exp
HL K HL K
n p

V Vm 0.520 α Φ Oτ n
V = IR ⇒ R = = = − exp( −αx )
α Ln − 1
2 2
−3
I Im 47.6 x10
or At x → ∞ , δn p = 0 so that B = 0 , then
R = 10.9 Ω
FG − x IJ − αΦ τ ⋅ exp(−αx)
δn p = A exp
H L K α L −1
O n
2 2

14.11 n n

If the solar intensity increases by a factor of 10, α Φ Oτ n

We also have δn p (0) = 0 = A − ,
then I L increases by a factor of 10 so that α Ln − 1
2 2

I L = 500 mA . Then which yields

LMexpFG V IJ − 1OP αΦ τ
A = 2 2O n
N HV K Q
−3 −12
I = 500 x10 − 4.58 x10
t
α Ln − 1
At the maximum power point We then obtain

218
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 14
Solutions Manual Problem Solutions

LMexpFG − x IJ − exp(−αx)OP
α Φ Oτ n (d)

α L −1N H L K
δn p = The photoconductor gain is
2 2
n Q n τp µp FG IJ
where Φ O is the incident flux at x = 0 .
Γph =
tn
1+
µn H K
where
14.13 2

For 90% absorption, we have L L

tn = =
Φ( x ) µ nΕ µ nV
= exp( −αx ) = 0.10
ΦO Then
Then FG1 + µ IJ = τ V bµ + µ g
τ p µ nV
L H µ K
p p
Γph = 2 2 n p
1 L
exp( +αx ) = = 10 n

0.1 or
or b10 g(5) (1000 + 430)
−7

F I
1 Γph =
b100x10 g
H K ⋅ ln(10)
2
x= −4

α
−1
or
For hν = 1.7 eV , α ≈ 10 cm
4
Γph = 7.15
Then
1F I
x=
10 H K
4
⋅ ln(10) ⇒ x = 2.3 µm 14.15
n-type, so holes are the minority carrier
and for hν = 2.0 eV , α ≈ 10 cm , so that
5 −1
(a)
x = 0.23 µm δp = G Lτ p = 10 b gb10 g 21 −8

so that
−3
δp = δn = 10 cm
13
14.14
−3 −1
G L = 10 cm s and N d > N a so holes are the
20
(b)
minority carrier.
(a)
∆σ = e(δp) µ n + µ p b g
δp = g ′τ = G L τ p b
= 1.6 x10
−19
gb10 g(8000 + 250)
13

so that or
δp = δn = 10 b gb10 g20 −7
∆σ = 1.32 x10
−2
(Ω − cm)−1
or (c)
δp = δn = 10 cm
13 −3 ( ∆σ ) AV
I L = J L ⋅ A = ( ∆σ ) AΕ =
(b) L
∆σ = e(δp) µ n + µ p b g =
b1.32 x10 gb10 g(5) −2 −4

b
= 1.6 x10
−19
gb10 g(1000 + 430)
13

or I L = 0.66 mA
100 x10
−4

or
(d)
∆σ = 2.29 x10
−3
(Ω − cm)−1
τp FG1 + µ IJ = τ V bµ + µ g
t H µ K
p p
(c) Γph = 2 n p
( ∆σ ) AV n
L n
IL = JL ⋅ A =
L b10 g(5) (8000 + 250)
−8

=
b2.29 x10 gb10 g(5) −3 −3
=
b100x10 g −4 2

−4
100 x10 or Γph = 4.13
or
I L = 115
. mA

219
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 14
Solutions Manual Problem Solutions

14.16 W = 0.620 µm
Φ( x ) = Φ O exp( −αx ) The prompt photocurrent density is
The electron-hole generation rate is
g ′ = αΦ( x ) = αΦ O exp( −αx )
J L 1 = eG LW = 1.6 x10 b −19
gb10 gb0.620x10 g
21 −4

or
and the excess carrier concentration is
J L1 = 9.92 mA / cm
2

δp = τ pα Φ( x )
(b)
Now The total steady-state photocurrent density is
∆σ = e(δp) µ n + µ p b g b
J L = e W + Ln + Lp G L g
and We find
J L = ∆σΕ
The photocurrent is now found from Ln = Dnτ n = b g (25) 2 x10 −7 = 22.4 µm

zz z z and
W xO

= (10)b10 g = 10.0 µm
IL = ∆σΕ ⋅ dA = dy ∆σΕ ⋅ dx −7

0 0
Lp = D pτ p

fz
xO Then
a
= We µ n + µ n Ε δp ⋅ dx
0
b
J L = 1.6 x10
−19
g(0.62 + 22.4 + 10.0)b10 gb10 g −4 21

Then or

z
J L = 0.528 A / cm
2
xO

b
I L = We µ n + µ p Εα Φ Oτ p g 0
exp( −αx )dx

LM 1
= Web µ + µ gΕα Φ τ − exp( −αx )
OP xO
14.18
In the n-region under steady state and for Ε = 0 ,
n
Nα p
Q O p
we have
a f + G − δp
0
d δpn
2
which becomes
I = Web µ + µ gΕΦ τ 1 − expa −αx f
Dp n
=0
dx ′
L
τp
2
L n p O p O

Now or
I = b50 x10 gb1.6 x10 g(1200 + 450)(50) a f − δp
−4 −19
d δpn
2
L GL
=−
×b10 gb 2 x10 g 1 − expb −b5x10 gb10 gg
n

dx ′
16 −7 4 −4 2 2
Lp Dp
or where L p = Dpτ p and where x ′ is positive in
2

I L = 0.131 µA
the negative x direction. The homogeneous
solution is found from
14.17
(a)
2
a f − δp
d δpnh nh
=0
LM b2 x10 gb10 g OP = 0.832 V dx ′
2 2
16 18
Lp
Vbi = ( 0.0259 ) ln The general solution is found to be
MN b1.5x10 g PQ 10 2
FG − x ′ IJ + B expFG + x ′ IJ
The space charge width is
δpnh = A exp
HL K HL K
W=M
L 2 ∈aV + V f FG N + N IJ OP 1/ 2
The particular solution is found from
p p

N e H N N KQ
bi R a d

−δpnp − G L
a d
=

=M
L 2(11.7)b8.85x10 g(0.832 + 5) −14 2
Lp Dp

N 1.6 x10
−19 which yields
GL Lp
2

F 2 x10 + 10 I OP
×G
16 18
1/ 2
δpnp = = G Lτ p

H b2 x10 gb10 gJK Q

Dp
16 18
The total solution is the sum of the homogeneous
or and particular solutions, so we have

220
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 14
Solutions Manual Problem Solutions

FG − x ′ IJ + B expFG + x ′ IJ + G τ Φ( x )
= exp( −αx ) = 0.10
δpn = A exp
HL K HL K
p p
L p
ΦO
which can be written as
One boundary condition is that δpn remains
1
finite as x ′ → ∞ which means that B = 0. Then exp( +αx ) = = 10
0.1
At x ′ = 0 , pn (0) = 0 = δpn (0) + pnO , so that
Then
δpn (0) = − pnO 1 1
We find that x = ln(10) = 2 ln(10)
b
A = − pnO + G L τ p g or
α 10

The solution is then written as x = 230 µm

b
δpn = G L τ p − G Lτ p + pnO exp g FGH −Lx ′ IJK
p
14.21
For the Al x Ga1− x As system, a direct bandgap for
The diffusion current density is found as

J p = − eD p
d δpn a f 0 ≤ x ≤ 0.45 , we have
E g = 1.424 + 1.247 x
dx x ′= 0
But At x = 0.45 , E g = 1.985 eV , so for the direct
a f
d δpn
=−
d δpn a f bandgap
1.424 ≤ E g ≤ 1.985 eV
dx dx ′
since x and x ′ are in opposite directions. which yields
So 0.625 ≤ λ ≤ 0.871 µm

J p = + eD p
d δpn a f
dx ′ x ′= 0 14.22

b
= eD p − G L τ p + pnO g FGH −L1IJK expFGH −Lx ′ IJK
p p x ′= 0
For x = 0.35 in GaAs1− x Px , we find
(a) E g = 1.85 eV and (b) λ = 0.670 µm

Then
eD p pnO 14.23
J p = eG L L p + (a)
Lp
For GaAs, n2 = 3.66 and for air, n1 = 1.0 .
The critical angle is
14.19 FG n IJ = sin F 1 I = 15.9°
H n K H 3.66K
−1 −1
We have θ C = sin 1

J L = eΦ O 1 − exp( −αW ) 2

b
= 1.6 x10 gb10 g 1 − expb−b3x10 gW g
−19 17 3
The fraction of photons that will not experience
total internal reflection is
or 2θ C 2(15.9 )
= 16 1 − expb −b3x10 gW g (mA)
3 = ⇒ 8.83%
JL 360 360
−4 (b)
Then for W = 1 µm = 10 cm , we find
Fresnel loss:
J L = 4.15 mA
F n − n IJ = F 3.66 − 1I
R=G
2 2

H n + n K H 3.66 + 1K = 0.326
2 1
For W = 10 µm ⇒ J L = 15.2 mA
2 1
For W = 100 µm ⇒ J L = 16 mA The fraction of photons emitted is then
(0.0883)(1 − 0.326) = 0.0595 ⇒ 5.95%
14.20
The minimum α occurs when λ = 1 µm which
−1
gives α = 10 cm . We want
2

221
Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 14
Solutions Manual Problem Solutions

14.24
We can write the external quantum efficiency as 14.25
η ext = T1 ⋅ T2 For an optical cavity, we have
where T1 = 1 − R1 with R1 is the reflection FI λ
coefficient (Fresnel loss), and the factor T2 is the
N
HK 2
=L

fraction of photons that do not experience total If λ changes slightly, then N changes slightly
also. We can write
internal reflection. We have
F n − n IJ 2 N 1λ 1 a
N1 + 1 λ 2 f
R =G
=
Hn +n K
2 1
1 2 2
Rearranging terms, we find
a
2 1

so that N 1λ 1 N1 + 1 λ 2 Nλ f Nλ λ
FG IJ
n2 − n1
2

2
−
2
= 1 1 − 1 2 − 2 =0
2 2 2
T1 = 1 − R1 = 1 −
Hn +n K2 1
If we define ∆λ = λ 1 − λ 2 , then we have
which reduces to N1 λ2
∆λ =
4 n1n2 2 2
T1 =
a
n1 + n2
2
f We can approximate λ 2 = λ , then
Now consider a solid angle from the source N 1λ 2L
point. The surface area described by the solid = L ⇒ N1 =
2 λ
angle is π p . The factor T1 is given by
2
Then
πp λ
2
1 2L
T1 = ⋅ ∆λ =
4πR 2 λ
2
2
From the geometry, we have which yields
θF I p 2 θ F I λ
2

H K
sin C =
2 R
⇒ p = 2 R sin C
2 H K ∆λ =
2L
Then the area is
θC F I
A = π p = 4 R π sin
H K 14.26
2 2 2

2 For GaAs,
Now 1.24 1.24
hν = 1.42 eV ⇒ λ = =
πp
2
Fθ I E 1.42
T1 = = sin
H 2K
2 C
or
4πR
2

λ = 0.873 µm
From a trig identity, we have
F I a
θC 1
f
Then
b0.873x10 g = 5.08x10
H K = 1 − cos θ C
2
sin −4 2
λ
2
2 2 ∆λ =
−7

2b0.75x10 g
= −4
cm
Then 2L
1
a
T1 = 1 − cos θ C
2
f or
∆λ = 5.08 x10 µm
−3

The external quantum efficiency is now

f a f
4 n1n2 1
η ext = T1 ⋅ T2 = ⋅ 1 − cos θ C
n1 + n2 a
2
2
or

fa f
2 n1n2
η ext = 1 − cos θ C
a
n1 + n2
2

222