Polar3TM HiPerFETTM IXFN110N60P3 VDSS = 600V

Power MOSFET ID25 = 90A

RDS(on)  56m
trr  250ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
miniBLOC
E153432

S
Symbol Test Conditions Maximum Ratings
G
VDSS TJ = 25C to 150C 600 V
VDGR TJ = 25C to 150C, RGS = 1M 600 V
VGSS Continuous 30 V S

VGSM Transient 40 V D

ID25 TC = 25C 90 A
G = Gate D = Drain
IDM TC = 25C, Pulse Width Limited by TJM 275 A S = Source
IA TC = 25C 55 A Either Source Terminal S can be used as
EAS TC = 25C 3 J the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns
PD TC = 25C 1500 W
TJ -55 ... +150 C Features
TJM 150 C
Tstg -55 ... +150 C 
International Standard Package
VISOL 50/60 Hz, RMS, t = 1minute 2500 V~

miniBLOC with Aluminum Nitride
IISOL 1mA, t = 1s 3000 V~ Isolation

Avalanche Rated
Md Mounting Torque for Base Plate 1.5/13 Nm/[Link] 
Low Package Inductance
Terminal Connection Torque 1.3/11.5 Nm/[Link] 
Fast Intrinsic Rectifier
Weight 30 g 
Low RDS(on) and QG

Advantages

Easy to Mount

Space Savings

Symbol Test Conditions Characteristic Values Applications

(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.

DC-DC Converters
BVDSS VGS = 0V, ID = 3mA 600 V 
Battery Chargers
VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V 
Switch-Mode and Resonant-Mode
Power Supplies
IGSS VGS = 30V, VDS = 0V 200 nA 
Uninterrupted Power Supplies
IDSS VDS = VDSS, VGS = 0V 50 A 
AC Motor Drives
TJ = 125C 2.75 mA 
High Speed Power Switching
Applications
RDS(on) VGS = 10V, ID = 55A, Note 1 56 m

© 2014 IXYS CORPORATION, All Rights Reserved DS100305B(9/14)

 IXFN110N60P3
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max. SOT-227B (IXFN) Outline

gfs VDS = 20V, ID = 55A, Note 1 65 105 S

Ciss 18 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1550 pF
Crss 8 pF
RGi Gate Input Resistance 1.2  
td(on) 63 ns
Resistive Switching Times
tr 30 ns
VGS = 10V, VDS = 0.5 • VDSS, ID = 55A
td(off) 106 ns (M4 screws (4x) supplied)
RG = 1 (External)
tf 15 ns
Qg(on) 254 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 55A 80 nC
Qgd 68 nC
RthJC 0.083C/W
RthCS 0.05 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
IS VGS = 0V 110 A
ISM Repetitive, Pulse Width Limited by TJM 440 A
VSD IF = 100A, VGS = 0V, Note 1 1.5 V
trr 250 ns
IF = 55A, -di/dt = 100A/s
QRM 1.6 C
IRM VR = 100V, VGS = 0V 14.0 A

Note 1. Pulse test, t  300s, duty cycle, d  2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXFN110N60P3

Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC

200
VGS = 10V VGS = 10V
100 180
8V
8V
160
7V
80
140
7V

I D - Amperes
I D - Amperes

120
60 6.5V
100

80 6.5V
40
60
6V
20 40
6V
20
5V 5V
0 0
0 1 2 3 4 5 6 7 0 5 10 15 20 25 30
VDS - Volts VDS - Volts

Fig. 4. RDS(on) Normalized to ID = 55A Value vs.

Fig. 3. Output Characteristics @ TJ = 125ºC
Junction Temperature
3.4
VGS = 10V VGS = 10V
100
7V 3.0

80 2.6
RDS(on) - Normalized

2.2 I D = 110A
I D - Amperes

60 6V I D = 55A
1.8

40 1.4

1.0
20
5V 0.6

0 0.2
0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Fig. 6. Maximum Drain Current vs.
Drain Current Case Temperature
3.0 100

VGS = 10V

2.6
80
TJ = 125ºC
RDS(on) - Normalized

2.2
I D - Amperes

60

1.8

40
1.4 TJ = 25ºC

20
1.0

0.6 0
0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade

© 2014 IXYS CORPORATION, All Rights Reserved

 IXFN110N60P3

Fig. 7. Input Admittance Fig. 8. Transconductance

180 200
TJ = - 40ºC
160 180

160
140
TJ = 125ºC 25ºC
140
120 25ºC

g f s - Siemens
- 40ºC
I D - Amperes

120
100 125ºC
100
80
80
60
60
40 40

20 20

0 0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 80 100 120 140 160 180
VGS - Volts I D - Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge
300 10

9 VDS = 300V
250 I D = 55A
8
I G = 10mA
7
200
I S - Amperes

VGS - Volts

150 5

4
100
TJ = 125ºC 3

TJ = 25ºC 2
50
1

0 0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 80 120 160 200 240
VSD - Volts QG - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

100,000 1000

Ciss
RDS(on) Limit
10,000
Capacitance - PicoFarads

100
I D - Amperes

1,000 100µs
Coss

100
10

10 TJ = 150ºC

Crss TC = 25ºC
f = 1 MHz 1ms
Single Pulse

1 1
0 5 10 15 20 25 30 35 40 10 100 1,000
VDS - Volts VDS - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXFN110N60P3

Fig. 13. Maximum Transient Thermal Impedance

1

Fig. 13. Maximum Transient Thermal Impedance

AAAAA
0.2

0.1
Z (th)JC - ºC / W

0.01

0.001
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

© 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_110N60P3(K9) 9-25-14