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1N400 Series Diode Specifications

This document summarizes the specifications of 1N4001-1N4007 plastic silicon rectifiers. 1. They have a voltage range of 50-1000V and current rating of 1A. 2. Features include low cost, low leakage, low forward voltage drop, and high current capability. 3. They have an axial lead plastic case and can operate in any mounting position from -55°C to +150°C.

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Jerry Escalona
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0% found this document useful (0 votes)
19 views2 pages

1N400 Series Diode Specifications

This document summarizes the specifications of 1N4001-1N4007 plastic silicon rectifiers. 1. They have a voltage range of 50-1000V and current rating of 1A. 2. Features include low cost, low leakage, low forward voltage drop, and high current capability. 3. They have an axial lead plastic case and can operate in any mounting position from -55°C to +150°C.

Uploaded by

Jerry Escalona
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Diode Semiconductor Korea 1N4001- - - 1N4007

VOLT AGE RANGE: 50 --- 1000 V


PLASTIC SILICON RECTIFIERS CURRENT : 1.0 A

FEATURES
Low cos t
Diffus ed junction
DO - 41
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0

MECHANICAL DATA
Cas e:JEDEC DO--41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.012ounces ,0.34 gram s
Mounting pos ition: Any

M AXIM UM RAT INGS AND ELECT RICAL CHARACT ERIST ICS


Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.

1N 1N 1N 1N 1N 1N 1N
UNITS
4001 4002 4003 4004 4005 4006 4007

Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage V R MS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average f orw ard rectif ied current
IF (AV) 1.0 A
9.5mm lead lengths, @TA =75
Peak f orw ard surge current
8.3ms s ingle half -s ine-w av e IF SM 40.0 A
superimposed on rated load @TJ =125
Maximum instantaneous f orw ard voltage
VF 1.0 V
@ 1.0 A
Maximum reverse current @TA =25 5.0
IR A
at rated DC blocking voltage @TA =100 50.0
Typical junction capacitance (Note1) CJ 15 pF
Typical thermal resistance (Note2) Rθ JA 50 /W
Operating junction temperature range TJ - 55 ---- + 150
Storage temperature range TSTG - 55 ---- + 150
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
[Link]
Diode Semiconductor Korea 1N4001 - - - 1N4007

FIG.1 -- TYPICAL FORWARD CHARACTERISTIC FIG.2 -- TYPICAL JUNCTION CAPACITANCE


INSTANTANEOUS FORWARD CURRENT

100

JUNCTION CAPACITANCE,pF
10 TJ=25 100
Pulse Width=300us
4 60
f=1MHz
2 40 TJ=25
1.0
20
0.4
AMPERES

10
0.2

0.1
4
0.06
0.04
2
0.02
0.01 1
0.6 0.8 1.0 1.2 1.4 1.6 .1 .2 .4 1.0 2 4 10 20 40 100

INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS

FIG.3 -- PEAK FORWARD SURGE CURRENT FIG.4 -- FORWARD DERATING CURVE


AVERAGE FORWARD CURRENT
PEAK FORWARD SURGE CURRENT

50
1.0

40 0 .8
TJ=125 C
8.3ms Single Half
sine-wave
AMPERES

30 .6
AMPERES

20 .4
Single Phase
Half Wave 60HZ
Resistive or
10 .2 Inductive Load
0.375"(9.5)Lead Length

0 0
1 10 100 25 50 75 100 125 150 175 200

NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE,

[Link]

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