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FET Tutorial Overview and Quiz

This document provides an overview of field effect transistors (FETs) and bipolar junction transistors (BJTs). It contains 11 multiple choice questions that test understanding of key characteristics and properties of FETs and BJTs, including how they are controlled by voltage or current, their typical cross-sectional structures, and equations used to model their behavior. Common applications of these transistors in integrated circuits and optically isolated switching circuits are also addressed.

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14 views3 pages

FET Tutorial Overview and Quiz

This document provides an overview of field effect transistors (FETs) and bipolar junction transistors (BJTs). It contains 11 multiple choice questions that test understanding of key characteristics and properties of FETs and BJTs, including how they are controlled by voltage or current, their typical cross-sectional structures, and equations used to model their behavior. Common applications of these transistors in integrated circuits and optically isolated switching circuits are also addressed.

Uploaded by

Cadane Codner
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

ELET1500 FET Tutorial

1. Which of the following is NOT TRUE for transistors

(a) The β of a BJT is dependent on temperature


(b) BJTs are made from two forward biased diodes
(c) FETs are voltage controlled devices
(d) BJT are current controlled devices

2. In the diagram of Fig. 1.11 (depletion region not shown), what would cause the channel to be
pinched off? +V dd

D
(a) Making VGS more negative

(b) Making VGS more positive G


p n p
(c) Setting VGS to zero Volt
-
(d) Setting VGS = Vdd V GS
+
S

Figure 1

3. Which of the following is most likely to have the cross sectional structure shown in Figure 2
when there is no applied bias?

Figure 2

(a) E-MOSFET (b) D-MOSFET (c) JFET (d) MESFET


2
V
4. IDSS, as used in Shockley’s equation, I D  I DSS 1  GS  , is the value of the drain
 VP 
current when:

(a) VDD = 0 (b) VGS = VP (c) VGS = 0 (d) VG = 0

5. For the JFET, when VGS = -VP then:

(a) VDS =0 (b) IDss = 0 (c) ID = 0 (d) VTh = 0

6. Which of the following is FALSE for Depletion type MOSFET?

(a) VGS  VTh must exist before current flows between the Drain and the Source
(b) ID may be found from Shockley’s Equation
(c) They have large input impedances
(d) They may be used a voltage variable resistances

7. Which of the following are characteristic to both FETs and BJTs?

(a) They are used to make integrated circuits (ICs)


(b) They are bipolar devices
(c) They are unipolar devices
(d) They input impedance is high due to the oxide layer

8. The circuit in Figure 3 was designed so that the quiescent value of VGS is -2 V. What
is the voltage at the drain?

Figure 3

(a) 6V (b) 11 V (c) 10 V (d) 4 V


9. What is the voltage at the Gate of the JFET in the circuit of Figure 4?

(a) 2.4 V

(b) 4.0 V

(c) 0.7 V

(d) 8V

Figure 4

10. Which of the following is CORRECT for a photocell (LDR)

(a) Its resistances varies with temperature


(b) Its resistances varies with pressure
(c) Its resistances varies with light intensity
(d) Its resistances varies with humidity

11. A 5 Vdc source must be used to control (or switch) a 12 Vdc supply in a separate
circuit with different grounding. Which of the devices below may be used to
accomplish this?

(a) Optical isolator


(b) BJT
(c) JFET
(d) Thermistor

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