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TDA7560 4x50W Car Amplifier Datasheet

This document provides information on the TDA7560, a quad bridge car radio amplifier chip. It can provide up to 4 x 50W of power into 4 ohm loads and has protection features for short circuits, overheating, and more. The chip uses BCD technology for high power output and low distortion. Electrical specifications are provided for operating voltages, currents, thermal performance and more.
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0% found this document useful (0 votes)
107 views9 pages

TDA7560 4x50W Car Amplifier Datasheet

This document provides information on the TDA7560, a quad bridge car radio amplifier chip. It can provide up to 4 x 50W of power into 4 ohm loads and has protection features for short circuits, overheating, and more. The chip uses BCD technology for high power output and low distortion. Electrical specifications are provided for operating voltages, currents, thermal performance and more.
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

TDA7560

4 x 50 W quad bridge car radio amplifier

Feature
■ Superior output power capability:
– 4 x 50 W/4 Ω max.
– 4 x 45 W/4 Ω EIAJ
– 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 %
– 4 x 80 W/2 Ω max. Flexiwatt25 Flexiwatt25
(vertical) (horizontal)
– 4 x 77 W/2 Ω EIAJ
– 4 x 55 W/2 Ω @ 14.4 V, 1 kHz, 10 %
■ Overrating chip temperature with soft thermal
■ Multipower BCD technology
limiter
■ MOSFET output power stage
■ Output DC offset detection
■ Excellent 2 Ω driving capability
■ Load dump voltage
■ Hi-Fi class distortion
■ Fortuitous open GND
■ Low output noise
■ Reversed battery
■ Standby function
■ ESD
■ Mute function
■ Automute at min. supply voltage detection Description
■ Low external component count:
The TDA7560 is a breakthrough BCD (Bipolar /
– Internally fixed gain (26 dB)
CMOS / DMOS) technology class AB audio power
– No external compensation amplifier in Flexiwatt 25 package designed for
– No bootstrap capacitors high power car radio.
■ On board 0.35 A high side driver The fully complementary P-Channel/N-Channel
output structure allows a rail to rail output voltage
Protections swing which, combined with high output current
■ Output short circuit to GND, to VS, across the and minimized saturation losses sets new power
load references in the car-radio field, with unparalleled
■ Very inductive loads distortion performances.

Table 1. Device summary


Order code Package Packing

TDA7560 Flexiwatt25 (vertical) Tube


TDA7560H Flexiwatt25 (horizontal) Tube

November 2008 Rev 4 1/17


[Link] 1
TDA7560 Block and pin connection diagram

1 Block and pin connection diagram

Figure 1. Block diagram

Vcc1 Vcc2
470μF 100nF

ST-BY

MUTE HSD HSD/VOFF_DET


OUT1+
IN1 OUT1-
0.1μF PW-GND

OUT2+
IN2 OUT2-
0.1μF PW-GND

OUT3+
IN3 OUT3-
0.1μF PW-GND

OUT4+
IN4 OUT4-
0.1μF PW-GND

AC-GND SVR TAB S-GND


0.47μF 47μF
D94AU158D

Figure 2. Pin connection (top view)

TAB 1 TAB 1
P-GND2 P-GND2
OUT2- OUT2-
ST-BY ST-BY
OUT2+ OUT2+
VCC VCC
OUT1- OUT1-
P-GND1 P-GND1

OUT1+ OUT1+

SVR SVR

IN1 IN1

IN2
Flexiwatt25 IN2 Flexiwatt25
vertical S-GND horizontal
S-GND
IN4 IN4
IN3
IN3
AC-GND
AC-GND
OUT3+
OUT3+
P-GND3
P-GND3
OUT3-
OUT3-
VCC
VCC
OUT4+
OUT4+
MUTE
MUTE
OUT4-
OUT4-
P-GND4
P-GND4
HSD 25
HSD 25
D06AU1655
D94AU159A

5/17
Electrical specifications TDA7560

2 Electrical specifications

2.1 Absolute maximum ratings


Table 2. Absolute maximum ratings
Symbol Parameter Value Unit

VCC Operating supply voltage 18 V


VCC (DC) DC supply voltage 28 V
VCC (pk) Peak supply voltage (for t = 50 ms) 50 V

Output peak current


IO Repetitive (duty cycle 10 % at f = 10 Hz) 9 A
Non repetitive (t = 100 µs) 10 A
Ptot Power dissipation Tcase = 70 °C 80 W
Tj Junction temperature 150 °C
Tstg Storage temperature -55 to 150 °C

2.2 Thermal data


Table 3. Thermal data
Symbol Parameter Value Unit

Rth j-case Thermal resistance junction to case Max. 1 °C/W

2.3 Electrical characteristics


Table 4. Electrical characteristics
(Refer to the test and application diagram, VS = 14.4 V; RL = 4 Ω; Rg = 600 Ω; f = 1 kHz;
Tamb = 25 °C; unless otherwise specified).
Symbol Parameter Test condition Min. Typ. Max. Unit

Iq1 Quiescent current RL = ∞ 80 200 320 mA


VOS Output offset voltage Play Mode ±50 mV
During mute ON/OFF output
dVOS ±60 mV
offset voltage
Gv Voltage gain 25 26 27 dB
dGv Channel gain unbalance ±1 dB
VS = 13.2 V; THD = 10 % 23 25
VS = 13.2 V; THD = 1 % 16 19
Po Output power W
VS = 14.4 V; THD = 10 % 28 30
VS = 14.4 V; THD = 1 % 20 23

6/17
TDA7560 Electrical specifications

Table 4. Electrical characteristics (continued)


(Refer to the test and application diagram, VS = 14.4 V; RL = 4 Ω; Rg = 600 Ω; f = 1 kHz;
Tamb = 25 °C; unless otherwise specified).
Symbol Parameter Test condition Min. Typ. Max. Unit

VS = 13.2 V; THD = 10 %, 2 Ω 42 45
VS = 13.2 V; THD = 1 %, 2 Ω 32 34
Po Output power W
VS = 14.4 V; THD = 10 %, 2 Ω 50 55
VS = 14.4 V; THD = 1 %, 2 Ω 40 43
VS = 13.7 V; RL = 4 Ω 41 45
Po EIAJ EIAJ output power(1) W
VS = 13.7 V; RL = 2 Ω 72 77
VS = 14.4 V; RL = 4 Ω 43 50
Po max. Max. output power(1) W
VS = 14.4 V; RL = 2 Ω 75 80
Po = 4 W 0.006 0.02
THD Distortion %
Po = 15 W; RL = 2 Ω 0.015 0.03
"A" Weighted 35 50
eNo Output noise µV
Bw = 20 Hz to 20 kHz 50 70
SVR Supply voltage rejection f = 100 Hz; Vr = 1 Vrms 50 70 dB
fch High cut-off frequency PO = 0.5 W 100 300 kHz
Ri Input impedance 80 100 120 KΩ
f = 1 kHz PO = 4 W 60 70 -
CT Cross talk dB
f = 10 kHz PO = 4 W 50 60 -
VST-BY = 1.5V 20
ISB Standby current consumption μA
VST-BY = 0 V 10
Ipin5 Standby pin current VST-BY = 1.5 V to 3.5 V ±10 μA
VSB out Standby out threshold voltage (Amp: ON) 3.5 V
VSB in Standby in threshold voltage (Amp: OFF) 1.5 V
AM Mute attenuation POref = 4W 80 90 dB
VM out Mute out threshold voltage (Amp: Play) 3.5 V
VM in Mute in threshold voltage (Amp: Mute) 1.5 V
(Amp: Mute)
Att ≥ 80 dB; POref = 4 W 6.5 7
VAM in VS automute threshold V
(Amp: Play)
Att < 0.1 dB; PO = 0.5 W 7.5 8
VMUTE = 1.5 V
7 12 18 μA
Ipin22 Muting pin current (Sourced current)
VMUTE = 3.5 V -5 18 μA

HSD section

Vdropout Dropout voltage IO = 0.35 A; VS = 9 to 16 V 0.25 0.6 V


Iprot Current limits 400 800 mA

7/17
Electrical specifications TDA7560

Table 4. Electrical characteristics (continued)


(Refer to the test and application diagram, VS = 14.4 V; RL = 4 Ω; Rg = 600 Ω; f = 1 kHz;
Tamb = 25 °C; unless otherwise specified).
Symbol Parameter Test condition Min. Typ. Max. Unit

Offset detector (Pin 25)

VM_ON Mute voltage for DC offset 8 V


VST-BY = 5 V
VM_OFF detection enabled 6 V
VOFF Detected differential output offset VST-BY = 5 V; Vmute = 8 V ±2 ±3 ±4 V

Pin 25 voltage for detection = VST-BY = 5 V; Vmute = 8 V


V25_T 0 1.5 V
True VOFF > ±4 V
Pin 25 voltage for detection = VST-BY = 5 V; Vmute = 8 V
V25_F 12 V
False VOFF > ±2 V
1. Saturated square wave output.

2.4 Standard test and application circuit, and PCB layout


Figure 3. Standard test and application circuit

C8 C7
0.1μF 2200μF
Vcc1-2 Vcc3-4

R1 6 20
ST-BY 4 9
10K C9 8 OUT1
1μF
R2 7
MUTE 22
47K C10
1μF 5
C1
2 OUT2
IN1 11
3
0.1μF

IN2 12 17
C2 0.1μF 18 OUT3
19
IN3 15
C3 0.1μF
21
IN4 14 24 OUT4
C4 0.1μF S-GND 23
13
16 10 25 1
SVR HSD/OD TAB
C5 C6 *)
0.47μF R3
47μF

*) R3 = 10kΩ to be placed when pin 25 is used as offset detector.


D95AU335C

8/17
Electrical specifications TDA7560

2.5 Electrical characteristics curves


Figure 5. Quiescent current vs. supply Figure 6. Output power vs. supply voltage
voltage (RL = 4Ω)

Id (mA) Po (W)
240 80
75 Po-max
Vi = 0
70
220 65
RL = 4 Ohm 60 RL= 4 Ohm
55 f= 1 KHz
200 50 THD= 10 %
45
40
180 35
30
25 THD= 1 %
160 20
15
10
140 5
8 10 12 14 16 18 8 9 10 11 12 13 14 15 16 17 18
Vs (V) Vs (V)

Figure 7. Output power vs. supply voltage Figure 8. Distortion vs. output power
(RL = 2Ω) (RL = 4Ω)

Po (W) THD (%)


130 10
120 Po-max
110
Vs= 14.4 V
100 1 RL = 4 Ohm
90 RL= 2 Ohm
f= 1 KHz THD= 10 %
80 f = 10 KHz
70 0.1
60
50
40 THD= 1 % f = 1 KHz
0.01
30
20
10
8 9 10 11 12 13 14 15 16 17 18 0.001
0.1 1 10
Vs (V) Po (W)

Figure 9. Distortion vs. output power Figure 10. Distortion vs. frequency (RL = 4Ω)
(RL = 2Ω)

THD (%) THD (%)


10 10

Vs= 14.4 V
1 RL = 2 Ohm 1 Vs = 14.4 V
RL = 4 Ohm
f = 10 KHz Po = 4 W

0.1 0.1

0.01 f = 1 KHz 0.01

0.001 0.001
0.1 1 10 10 100 1000 10000
Po (W) f (Hz)

10/17
TDA7560 Electrical specifications

Figure 11. Distortion vs. frequency (RL = 2Ω) Figure 12. Crosstalk vs. frequency

THD (%) CROSSTALK (dB)


10 90

80
1 Vs = 14.4 V
RL = 2 Ohm 70
Po = 8 W
60
0.1
50 RL = 4 Ohm
Po = 4 W
40 Rg = 600 Ohm
0.01
30

0.001 20
10 100 1000 10000 10 100 1000 10000
f (Hz) f (Hz)

Figure 13. Supply voltage rejection vs. Figure 14. Output attenuation vs. supply
frequency voltage

SVR (dB) OUT ATTN (dB)


100
90 0
RL = 4 Ohm
80 Po= 4 W ref.
-20
70
60 -40

50 -60
Rg= 600 Ohm
40 Vripple= 1 Vrms
-80
30
20 -100
5 6 7 8 9 10
10 100 1000 10000
f (Hz) Vs (V)

Figure 15. Output noise vs. source resistance Figure 16. Power dissipation and efficiency vs.
output power (sine-wave operation)

En (uV) Ptot (W) n (%)


130 90 90
120 80 n 80
110 Vs= 14.4 V Vs= 13.2 V
70 70
RL= 4 Ohm RL= 4 x 4 Ohm
100
60 f= 1 KHz SINE
60
90
50 50
80
70 40 40
22-22 KHz lin.
60 30 30
Ptot
50 20 20
40 "A" wgtd
10 10
30
0 0
20 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
1 10 100 1000 10000 100000
Rg (Ohm) Po (W)

11/17
Electrical specifications TDA7560

Figure 17. Power dissipation vs. output power Figure 18. Power dissipation vs. output power
(music/speech simulation); (music/speech simulation);
RL = 4 x 4Ω RL = 4 x 2Ω

Ptot (W) Ptot (W)


30 60
Vs= 13.2 V
55 RL= 4 x 2 Ohm
Vs= 13.2 V GAUSSIAN NOISE
25 50
RL= 4 x 4 Ohm
GAUSSIAN NOISE
45
CLIP START
40 CLIP START
20
35
30
15 25
20
10 15
10
5 5
0 1 2 3 4 5 6 0 2 4 6 8 10
Po (W) Po (W)

Figure 19. ITU R-ARM frequency response,


weighting filter for transient pop

Output attenuation (dB)


10

-10

-20

-30

-40

-50
10 100 1000 10000 100000
Hz AC00343

12/17
TDA7560 Application hints

3 Application hints
(ref. to the circuit of Figure 3)

3.1 SVR
Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF
time sequence and, consequently, plays an essential role in the pop optimization during
ON/OFF [Link] conveniently serve both needs, ITS MINIMUM RECOMMENDED
VALUE IS 10 µF.

3.2 Input stage


The TDA7560's inputs are ground-compatible and can stand very high input signals
(±8 Vpk) without any performances degradation.
If the standard value for the input capacitors (0.1µF) is adopted, the low frequency cut-off
will amount to 16 Hz.

3.3 Standby and muting


Standby and Muting facilities are both CMOS-compatible. In absence of true CMOS ports or
microprocessors, a direct connection to Vs of these two pins is admissible but a 470 kOhm
equivalent resistance should be present between the power supply and the muting and
ST-BY pins.
R-C cells have always to be used in order to smooth down the transitions for preventing any
audible transient noises.
About the standby, the time constant to be assigned in order to obtain a virtually pop-free
transition has to be slower than 2.5 V/ms.

3.4 DC offset detector


The TDA7560 integrates a DC offset detector to avoid that an anomalous DC offset on the
inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on
the outputs which may lead to speakers damage for overheating. The feature is enabled by
the MUTE pin (according to Table 4) and works with the amplifier unmuted and with no
signal on the inputs.
The DC offset detection is signaled out on the HSD pin. To ensure the correct functionality of
the Offset Detector it is necessary to connect a pulldown 10 kΩ resistor between HSD and
ground.

3.5 Heatsink definition


Under normal usage (4 Ohm speakers) the heatsink's thermal requirements have to be
deduced from Figure 17, which reports the simulated power dissipation when real
music/speech programmes are played out. Noise with gaussian-distributed amplitude was
employed for this simulation. Based on that, frequent clipping occurrence (worst-case) will
cause Pdiss = 26 W. Assuming Tamb = 70 °C and TCHIP = 150 °C as boundary conditions, the
heatsink's thermal resistance should be approximately 2 °C/W. This would avoid any
thermal shutdown occurrence even after long-term and full-volume operation

13/17

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