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1N5820/1N5821/1N5822 Diode Specs

This document provides specifications for three silicon rectifier diodes: 1N5820, 1N5821, and 1N5822. The diodes are Schottky barrier diodes intended for use in low voltage, high frequency applications like inverters, free wheeling, and polarity protection. Key specifications listed include maximum voltage and current ratings, forward voltage drop at different currents, maximum reverse leakage current, power dissipation, junction capacitance, and thermal and storage temperature ranges.

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0% found this document useful (0 votes)
11 views1 page

1N5820/1N5821/1N5822 Diode Specs

This document provides specifications for three silicon rectifier diodes: 1N5820, 1N5821, and 1N5822. The diodes are Schottky barrier diodes intended for use in low voltage, high frequency applications like inverters, free wheeling, and polarity protection. Key specifications listed include maximum voltage and current ratings, forward voltage drop at different currents, maximum reverse leakage current, power dissipation, junction capacitance, and thermal and storage temperature ranges.

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Eliecer Meneses
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

1N5820, 1N5821, 1N5822

Silicon Rectifier Diodes


Schottky Barrier, Fast Switching
Features:
D 3.0 Ampere Operation at TA = +95C
Application:
D For Use in Low Voltage, High Frequency Inverters Free Wheeling, and Polarity Protection Applications
Maximum Ratings and Electrical Characteristics: (TA = +25C unless otherwise specified)
Maximum Repetitive Reverse Voltage, VRRM
1N5820 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
1N5821 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
1N5822 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Maximum Average Forward Rectified Current, IF(AV)
(.375” (9.5mm) lead length at TL = +95C), . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
Non−Repetitive Peak Forward Surge Current (8.3ms single half sine−wave), IFSM . . . . . . . . . . 80A
Maximum Instantaneous Forward Voltage, VF
IF = 3.0A
1N5820 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .475mV
1N5821 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500mV
1N5822 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .525mV
IF = 9.4A
1N5820 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .850mV
1N5821 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .900mV
1N5822 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .950mV
Maximum Average Reverse Current, IR
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5mA
TA = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6W
Typical Junction Capacitance (VR = 4V, f = 1MHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190pF
Operating Junction Temperature Range TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +125C
Storage Temperature Range TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +125C
Typical Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28C/W

1.000 .371
(25.4) (9.4)
Min Max

.050 (1.27) Dia Max .250 (6.35)


Dia Max
Color Band Denotes Cathode

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