LAB 2 Basic CMOS Amplifiers

I. Objective
Design, simulate, and prototype the common source and source follower amplifiers.

II. Preparation

Basic Concepts
The input-output characteristic of an amplifier is generally a non-linear function that can
be approximated by a polynomial over some signal range:
2 n
y  t   a0 + a1 x  t  + a2 x  t  +  + an x  t  , x1  x  x2
(1)
The input, x(t), and output, y(t), may be current or voltage quantities. For a suf ficiently
narrow range of x the circuit can be modeled as a linear amplifier:
y  t   a0 + a1 x  t  , (2)
where a0 is the operating (bias) point and a1 is the small-signal gain. It is under this
assumption that we perform smal l-signal analysis on transistor circuits using models such as
the hybrid- or T-model. Operating points of transistors are set by on-chip biasing networks or
off-chip DC signals. As the input x(t) increases in magnitude however , higher order terms
manifest themselves in the input-output charac teristic, as seen in Equation (1), leading to
nonlinearity and necessitating large-signal analysis.

Typical performance metrics for an amplif ier include gain, ba ndwidth, slew rate,
linearity, noise, dynamic range, power dissipation and supply voltage. Furthermore, input and
output impedances determine how the circuit interacts with the pr eceding and subsequent
stages. In practice, most of these parameters trade off with each other , making the design a
multi-dimensional optimization problem. The purpose of this lab is to investigate and
understand some of these trade-offs by analyzing the impact of different bias conditions on the
small-signal performance of tw o single-stage amplifiers: (a) the common source (CS)
amplifier, and (b) the source follower (SF). The instructions that follow will guide you through
the steps of hand analysis, simulation and prot otyping of these circuits . In lab 2, the intu ition
gained in this exercise will help you to design an operational amplifier circuit.

In your designs you will again use the commercially available MOS transistor bank chips
of 4007 series. Their pinout is gi ven in the datasheet posted on the course website. For both

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 designs, use a 10V voltage supply , and the de vice parameters from T able 1 for your hand
calculations.
Table 1: 4007 CMOS Device Parameters

Parameter NMOS PMOS

Vt0 (V) 1.77 -1.40

K (= C ox A/V2) 2.17e-4 3.20e-5

V1/2) 1.85 3.30

 0.64e-2 5.7e-2
W/L 4 20
Cgs 18 pF 17pF

Cgd 14 pF 26 pF

a) Common Source Amplifier

VDD=10V
Q3 Q2

Vout=VOUT+vout
Rbias
IBIAS
Iout=IOUT+iout
Vin=VIN+vin
Q1
Figure 1: Common source (CS) amplifier.

Circuit Description
The first step in the analy sis of an analog circuit is identifying the biasing network and
the signal path. In this simple circuit, Q1 acts as the amplifier and Q2, Q3 and R bias make up
the biasing network. The operati ng point of the CS amplif ier is defined by the following
quiescent voltage and current signals as labeled in Fig. 1: VIN, VOUT, IOUT and VDD. In the lab,
VIN and V DD are of f-chip DC voltage signals. I OUT is generated by the p-channel current
mirror in order to define the drain current of transistor Q1. Notice that Q2, in addition to setting
the drain current IOUT, acts as an active load. The benefit over a resistive load is that a higher
output impedance is achieved.

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 The aforementioned DC biasi ng signals set the small-si gnal parameters of the CS
amplifier, including the transconductance of Q1 ( gm) and the output impedance of the circuit
(rout). Once the operating point has been defined, the AC operation of the CS amplifier can be
analyzed. Transistor Q1 conve rts small-signal variations in its gate-source voltage ( vin) to a
small-signal drain current, iout, as set by its transconductance, gm. This small-signal drain
current passes through the output imp edance of the CS amplifier , rout, and generates a small-
signal output voltage, vout, that is added to the DC component of the output, VOUT. As you can
see, the biasing conditions dictate how well the CS amplifier will perform.

Hand Analysis

DC Analysis

1. Determine the DC drain currents (I OUT) required to bias transi stor Q1 with ef fective
voltages of 400mV and 1V. Do not ignore channel length modulation.
HINT: Choose VDS1=VDD/2 for the maximum output voltage swing.

2. Design two current mirrors, consisting of Q2, Q3 and R bias, with the tr ansistor ratio of
1:1 to generate the bias currents calculated in item 1 above.

3. Calculate the output impedance of the amplifier under each biasing condition.

AC Analysis

The AC design of an amplifier involves sizing and biasing transistors in the signal path,
in this case Q1. Becaus e in this lab sizes of discrete components are fixed and biasing
conditions are given, we proceed directly to characterize the small-signal performance of the
amplifier. For each biasing condition (Veff=400mV and Veff=1V) calculate the following small-
signal performance metrics:

• gain (dB)
• bandwidth (Hz)
• unity-gain frequency (Hz)

Transient Analysis

Estimate the slew rate (V/ s) of yo ur amplifier under each biasing condition. Is this
circuit limited by the positive or negative slew rate? Why?

HSPICE Simulation
You will now verify the calcu lated performance of the amplifier under two biasing
conditions by simulating it with HSPICE. Use the models pr ovided on the course website.
Summarize all of your calculat ed and simulated results in a table and comment on any
differences.

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 DC Simulations

Run a DC operating point simulation. In the la b, not all resistance values are available.
Using the closest available resist or value listed in Appendix G of reference [2], simulate and
refine your current mirror designs to ensure that in each amplifier, Q1 is biased with Veff=0.4V
and Veff=1V respectively. Draw the circuit you will use to measure the output resistance in the
lab and verify its functionality in simulation. How do the DC operating points and the output
impedances of the amplifier compare with your calculations?

AC Simulations

Generate the Bode plots for the amplifier in order to fu lly characterize its frequency
response. Compare the simulate d versus calculated midband ga in (dB), bandwidth (Hz) and
unity gain bandwidth (Hz).

Transient Simulations

Using a square wave input, si mulate the amplifier’s slew rate for each biasing condition
and compare with your calculations.

b) Source Follower
Design an n-channel source follower (SF) as shown in Figure 2 (Fig. 3.6 of the textbook).

VDD=10V

Q1
Vin=VIN+vin
IBIAS Iout=IOUT+iout
Rbias
Vout=VOUT+vout

Q3 Q2

Figure 2: Source follower (SF).

Again, use ef fective voltages of 400mV a nd 1V, and a 10V supply . Follow the same
design procedure outlined within the ‘Hand Analysis’ and ‘HPSICE Simulation’ sections in
part (a). Summarize all of your calculated and simulated DC, AC and transient analysis results
in a table and comment on any differences.

III. Experiment
1. Build a single n- and p-channel current mirror, changing bias resistors to realize different
bias currents. Measure the output currents. Measure the output resistances using the test circuit
you devised in the ‘Preparation’ section.

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 2. Wire up the common source and sour ce follower amplifiers. Choosing one of your
designs (i.e., either V eff= 400mV or 1V), perform the fo llowing measurements on the
completed circuits:

Common Source Amplifier:

Source Follower:
• DC gain with and without body effect
• Bandwidth
• Output resistance
• Slew rate

Present your final measured results to the TA at the end of the lab. Be prepared to discuss
your measured results in relation with your calculated and simulated results.

References
[1] A. Chan Carusone, D. Johns and K. Martin, Analog Integrated Circuit Design, Wiley, 2011.

[2] A.S. Sedra and K.C. Smith, Microelectronic Circuits 5th Edition, Oxford University
Press, 2004.

[3] B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw Hill, 2001.

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