AF40P03

P-Channel Enhancement Mode Power MOSFET

„ Features „ General Description

-Lower On-Resistance The TO-252 package is universally preferred for all
-Simple Drive Requirement commercial-industrial surface mount applications and
-Fast Switching Characteristic suited for low voltage applications such as DC/DC
-RoHS Compliant converters.
-Pb Free Plating Product

„ Product Summary

BVDSS (V) RDS(ON) (mΩ) ID (A)

-30 28 -30

„ Pin Assignments „ Pin Descriptions

(Front View)
Pin Name Description
3 S S Source
G Gate
2 D D Drain

1 G

„ Ordering information
A X 40P03 X X

Feature PN Package Packing

F :MOSFET D: TO-252 Blank : Tube or Bulk
A : Tape & Reel
„ Block Diagram

D S

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 10, 2005
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 AF40P03
P-Channel Enhancement Mode Power MOSFET

„ Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
TC=25ºC -30
ID Continuous Drain Current, VGS=10V A
TC=100ºC -18
IDM Pulsed Drain Current (Note 1) -120 A
Power Dissipation TC=25ºC 31.3 W
PD
Linear Derating Factor 0.25 W/ºC
TSTG Storage Temperature Range -55 to 150 ºC
TJ Operating Junction Temperature Range -55 to 150 ºC

„ Thermal Data
Symbol Parameter Maximum Units
RθJC Thermal Resistance Junction-Case Max. 4.0 ºC/W
RθJA Thermal Resistance Junction- Ambient Max. 110 ºC/W

„ Electrical Characteristics (TJ=25ºC unless otherwise noted)

Limits
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
Breakdown Voltage Temperature Reference to 25ºC,
∆BVDSS/∆TJ - -0.02 - V/ºC
Coefficient ID=-1mA
Static Drain-Source VGS=-10V, ID=-18A - - 28
RDS(ON) mΩ
On-Resistance (Note 2) VGS=-4.5V, ID=-14A - - 50
VGS(th) Gate Threshold Voltage VDS= VGS, ID=-250uA -1 - - V
gfs Forward Transconductance VDS=-10V, ID=-18A - 20 - S
Drain-Source Leakage
VDS=-30V, VGS=0V - - -1
Current(TJ=25ºC)
IDSS uA
Drain-Source Leakage
VDS=-24V, VGS=0V - - -25
Current(TJ=150ºC)
IGSS Gate Source Leakage VGS=±20V - - ±100 nA
Qg Total Gate Charge (Note 2) ID=-18A - 14 22
Qgs Gate-Source Charge VDS=-24V - 3 - nC
Qgd Gate-Drain (“Miller”) Charge VGS=-4.5V - 9 -
td(on) Turn-On Delay Time (Note 2) VDS=-15V - 12 -
tr Rise Time ID=-18A - 56 -
nS
td(off) Turn-Off Delay Time RG=3.3Ω, VGS=-10V - 30 -
tf Fall-Time RD=0.8Ω - 57 -
Ciss Input Capacitance VGS=0V - 915 1465
Coss Output Capacitance VDS=-25V, - 280 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 195 -

„ Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VSD Forward On Voltage (Note 2) IS=-18A, VGS=0V - - -1.2 V
trr Reverse Recovery Time (Note 2) IS=-18A, VGS=0V, - 30 - ns
Qrr Reverse Recovery Charge Dl/dt=-100A/µs - 21 - nC

Anachip Corp.
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 AF40P03
P-Channel Enhancement Mode Power MOSFET

Note 1: Pulse width limited by safe operating area.

Note 2: Pulse width < 300us, duty cycle < 2%.

„ Typical Performance Characteristics

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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 AF40P03
P-Channel Enhancement Mode Power MOSFET

„ Typical Performance Characteristics

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

Anachip Corp.
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 AF40P03
P-Channel Enhancement Mode Power MOSFET

„ Marking Information
TO-252
( Top View)

Logo
Part Number 40P03
YYWWX
YY : Year
WW: Nth week
X : Internal code ( Optional)

„ Package Information
Package Type: TO-252
D
D1

E2
E3

E1
F1

B1
F

e e

R: 0.127~0.381
A2
A3

(0.1mm)
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.

Dimensions In Millimeters
Symbol
Min. Nom. Max.
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
F 2.20 2.63 3.05
F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.70
E3 3.50 4.00 4.50
e - 2.30 -
C 0.35 0.50 0.65

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