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2SC1904 NPN Transistor Specifications

This document provides specifications for the 2SC1904 silicon NPN power transistor from Inchange Semiconductor. It has a TO-126 package and is intended for high frequency power amplification applications. Key specifications include an absolute maximum collector-emitter voltage of 150V, collector current of 50mA, power dissipation of 1W, and junction temperature of 150°C. Electrical characteristics include a collector-emitter breakdown voltage of 150V, DC current gain range of 35-500, output capacitance of 3pF, and transition frequency of 70MHz.

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32 views3 pages

2SC1904 NPN Transistor Specifications

This document provides specifications for the 2SC1904 silicon NPN power transistor from Inchange Semiconductor. It has a TO-126 package and is intended for high frequency power amplification applications. Key specifications include an absolute maximum collector-emitter voltage of 150V, collector current of 50mA, power dissipation of 1W, and junction temperature of 150°C. Electrical characteristics include a collector-emitter breakdown voltage of 150V, DC current gain range of 35-500, output capacitance of 3pF, and transition frequency of 70MHz.

Uploaded by

vali2daduica
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1904

DESCRIPTION ·
·With TO-126 package
·Complement to type 2SA899

APPLICATIONS
·For high frequency power amplification

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 150 V

VCEO Collector-emitter voltage Open base 150 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current (DC) 50mA A

PD Total power dissipation TC=25℃ 1 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1904

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=∞ 150 V

V(BR)CBO Collector-base breakdown voltage IC=10μA ;IE=0 150 V

V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=10mA ;IB=1mA 0.5 V

VBEsat Base-emitter saturation voltage IC=10mA ;IB=1mA 1.0 V

ICBO Collector cut-off current VCB=140V; IE=0 1 μA

IEBO Emitter cut-off current VEB=4V; IC=0 1 μA

hFE DC current gain IC=10mA ; VCE=5V 35 500

COB Output capacitance IE=0 ; VCB=10V;f=1MHz 3 pF

fT Transition frequency IC=10mA ; VCE=5V 70 MHz

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1904

PACKAGE OUTLINE

Fig.2 Outline dimensions

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