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2N5495 NPN Power Transistor Specs

The 2N5495 is a silicon NPN power transistor from INCHANGE Semiconductor suitable for medium-power switching and amplifier applications. It has a collector-emitter sustaining voltage of 40V max, saturation voltage of 1V max at 3A collector current, and current gain of 20-100. The transistor has maximum ratings of 7A collector current, 3A base current, 1.8W power dissipation at 25C case temperature, and 150C junction temperature.

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8 views2 pages

2N5495 NPN Power Transistor Specs

The 2N5495 is a silicon NPN power transistor from INCHANGE Semiconductor suitable for medium-power switching and amplifier applications. It has a collector-emitter sustaining voltage of 40V max, saturation voltage of 1V max at 3A collector current, and current gain of 20-100. The transistor has maximum ratings of 7A collector current, 3A base current, 1.8W power dissipation at 25C case temperature, and 150C junction temperature.

Uploaded by

vali2daduica
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2N5495

DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 40V(Min)
·Low Saturation Voltage-
: VCE (sat)= 1V(Max)@IC= 3A

APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 60 V

Collector-Emitter Voltage
VCEV 60 V
VBE= -1.5V
Collector-Emitter Voltage
VCER 50 V
RBE= 100Ω

VCEO Collector-Emitter Voltage 40 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 7 A

IBB Base Current 3 A


Collector Power Dissipation
1.8
@ Ta=25℃
PC W
Collector Power Dissipation
50
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -65~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W

isc Website：[Link]
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2N5495

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 40 V

VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; RBE= 100Ω 50 V

VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.5V 60 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A


B 1.0 V

VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V 1.5 V

VCE= 55V; VBE= -1.5V 1.0


ICEV Collector Cutoff Current mA
VCE= 55V; VBE= -1.5V;TC= 125℃ 5.0

VCE= 40V; RBE= 100Ω 0.5


ICER Collector Cutoff Current mA
VCE= 40V; RBE= 100Ω; TC= 125℃ 3.5

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA

hFE DC Current Gain IC= 3A ; VCE= 4V 20 100

fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V 0.8 MHz

Switching Times

ton Turn-On Time 5 μs


IC= 3A; IB1= -IB2= 0.3A
toff Turn-Off Time 15 μs

isc Website：[Link] 2

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