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2SD2137 NPN Transistor Datasheet

This document provides specifications for the Transys 2SD2137 transistor. It is a plastic-encapsulated NPN transistor in a TO-220 package that can dissipate up to 2W of power at an ambient temperature of 25°C. Key electrical characteristics include a collector-base breakdown voltage of 60V, collector current rating of 3A, and operating temperature range of -55°C to +150°C.

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17 views1 page

2SD2137 NPN Transistor Datasheet

This document provides specifications for the Transys 2SD2137 transistor. It is a plastic-encapsulated NPN transistor in a TO-220 package that can dissipate up to 2W of power at an ambient temperature of 25°C. Key electrical characteristics include a collector-base breakdown voltage of 60V, collector current rating of 3A, and operating temperature range of -55°C to +150°C.

Uploaded by

vali2daduica
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Transys

Electronics
L I M I T E D

TO-220 Plastic-Encapsulated Transistors

2SD2137 TRANSISTOR (NPN) TO-220

1. BASE
FEATURES
Power dissipation 2. COLLECTOR

PCM: 2 W (Tamb=25℃) 3. EMITTER

Collector current
ICM: 3 A 123

Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=1mA, IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO Ic=30mA, IB=0 60 V

Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 6 V

Collector cut-off current ICBO VCB=60V, IE=0 100 µA

Emitter cut-off current IEBO VEB=6V, IC=0 100 µA

hFE(1) VCE=4V, IC=1A 70 320


DC current gain
hFE(2) VCE=4V, IC=3A 10

Collector-emitter saturation voltage VCE(sat) IC=3A, IB=375mA 1.2 V

Base-emitter voltage VBE VCE=4V, IC=3A 1.8 V

Transition frequency fT VCE=5V, IC=0.2A, f=10MHz 30 MHz

Turn-on time ton 0.3 µs

Switch time Storage time tstg VCC=50V, IC=1A, IB1=0.1A, IB2=-0.1A 2.5 µs

Fall time tf 0.2 µs

CLASSIFICATION OF hFE(1)
Rank Q P O

Range 70-150 120-250 160-320

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