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S9012 Transistor Pinout and Specs

This document provides specifications for a PNP transistor (S901 2). It lists the transistor's maximum ratings, electrical characteristics, and hFE classification ranges. Key details include that it is complementary to another transistor (S9013), has a junction temperature of 150°C, DC current gain of typically 120-400, and transition frequency of 150MHz.

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12 views2 pages

S9012 Transistor Pinout and Specs

This document provides specifications for a PNP transistor (S901 2). It lists the transistor's maximum ratings, electrical characteristics, and hFE classification ranges. Key details include that it is complementary to another transistor (S9013), has a junction temperature of 150°C, DC current gain of typically 120-400, and transition frequency of 150MHz.

Uploaded by

gbodlaj
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

S901 2

SOT-23
TRANSISTOR(PNP)
FEATURES
z Complementary to S9013 1. BASE
2. EMITTER
z Excellent hFE linearity
3. COLLECTOR

MARKING: 2T1

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V

Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V

Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA

Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 μA

Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA

DC current gain hFE VCE=-1V, IC= -50mA 120 400

Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V

Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V

VCE=-6V, IC= -20mA


Transition frequency fT 150 MHz
f=30MHz

Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 5 pF

CLASSIFICATION OF hFE
Rank L H J
Range 120-200 200-350 300-400

１　
JinYu [Link]
semiconductor

Ｄａｔｅ：２０１１／０５
S901 2

２
JinYu [Link]
semiconductor

Ｄａｔｅ：２０１１／０５

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