SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET BSS138

ISSUE 3 – MARCH 1996 ✪

PARTMARKING DETAIL – SS
S
D

SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 50 V
Continuous Drain Current at Tamb=25°C ID 200 mA
Pulsed Drain Current IDM 800 mA
Gate-Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 360 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source BVDSS 50 V ID=0.25mA, VGS=0V
Breakdown Voltage
Gate-Source Threshold VGS(th) 0.5 1.5 V ID=1mA, VDS= VGS
Voltage
Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage IDSS 0.5 µA VDS=50V, VGS=0
Drain Current 5 µA VDS=50V, VGS=0V, T=125°C(2)
100 nA VDS=20V, VGS=0
Static Drain-Source RDS(on) 3.5 Ω VGS=5V,ID=200mA
On-State Resistance (1)
Forward gfs 120 mS VDS=25V,ID=200mA
Transconductance(1)(2)
Input Capacitance (2) Ciss 50 pF
Common Source Coss 25 pF VDS=25V, VGS=0V, f=1MHz
Output Capacitance (2)
Reverse Transfer Crss 8 pF
Capacitance (2)
Turn-On Delay Time (2)(3) td(on) 10 ns
Rise Time (2)(3) tr 10 ns VDD ≈30V, ID=280mA
Turn-Off Delay Time (2)(3) td(off) 15 ns
Fall Time (2)(3) tf 25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

3 - 72
 BSS138 BSS138
TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS
VGS =2.5V 3V 3.5V

VGS -Gate-Source Voltage (Volts)

1.0 100 14 1.0
IDS -Drain Source Current (A)

VGS =10V 5V 4.5V 4V

IDS - Drain Source Current (A)

4V 12 80µs Pulsed Test
0.8 0.8

RDS(on) - Drain Source

On Resistance (Ohms)
0V VDS =10V
ID =200mA =2
10 VD
D

3.5V V
30 0.6
0.6 8 50
V

3V 10
6
0.4 0.4
4
2.5V 5V
0.2 0.2
7V 2
2V 10V
80µs Pulsed Test
0 1.0 0 0
0 1 2 3 4 5 0.01 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5

Q-Charge (nC) VGS - Gate Source Voltage (V)

VDS -Drain Source Voltage (Volts) ID-Drain Current (Amperes)

Saturation Characteristics Typical On Resistance vs. Typical Gate Charge vs. Typical Transfer Characteristics
Drain Current Gate-Source Voltage

1.0
gfs -Forward Transconductance (mS)

gfs -Forward Transconductance (mS)

VSD - Source Drain Voltage (V)

500 500
0.9
80µs Pulsed Test

400 400 0.8

VGS =0
0.7
300 300 0.6
VDS =25V VDS =25V
80µs Pulsed Test 80µs Pulsed Test 0.5
200 200 0.4
0.3
100 100 0.2
0.1
0 0 100µA 1mA 10mA 100mA 1A
0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10
IDS - Drain Source Current
ID -Drain Current (Amperes) VGS -Gate Source Voltage (Volts) Typical Diode Forward Voltage
Typical Transconductance vs. Typical Transconductance vs.
Drain Current Gate - Source Voltage
Normalised RDS(on) And VGS(th)

100 1.8
Coss NOTE:-VGS =0V RDS(on) AT
Ciss VGS =5V
F=1MHz
1.6 ID=200mA
Crss Ciss
C-Capacitance (pF)

1.4

Coss 1.2
10
VGS(th) AT
1.0 ID=1mA
VDS=VGS

0.8
Crss

0.6
1
0.1 1 10 100 -40 0 40 80 120 160
0

VDS -Drain Source Voltage (Volts) T-Temperature ( °C)

Typical Capacitance vs. Normalised RDS(on) And VGS(th)

Drain - Source Voltage vs. Temperature

3 - 73 3 - 74
 BSS138 BSS138
TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS
VGS =2.5V 3V 3.5V

VGS -Gate-Source Voltage (Volts)

1.0 100 14 1.0
IDS -Drain Source Current (A)

VGS =10V 5V 4.5V 4V

IDS - Drain Source Current (A)

4V 12 80µs Pulsed Test
0.8 0.8

RDS(on) - Drain Source

On Resistance (Ohms)
0V VDS =10V
ID =200mA =2
10 VD
D

3.5V V
30 0.6
0.6 8 50
V

3V 10
6
0.4 0.4
4
2.5V 5V
0.2 0.2
7V 2
2V 10V
80µs Pulsed Test
0 1.0 0 0
0 1 2 3 4 5 0.01 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5

Q-Charge (nC) VGS - Gate Source Voltage (V)

VDS -Drain Source Voltage (Volts) ID-Drain Current (Amperes)

Saturation Characteristics Typical On Resistance vs. Typical Gate Charge vs. Typical Transfer Characteristics
Drain Current Gate-Source Voltage

1.0
gfs -Forward Transconductance (mS)

gfs -Forward Transconductance (mS)

VSD - Source Drain Voltage (V)

500 500
0.9
80µs Pulsed Test

400 400 0.8

VGS =0
0.7
300 300 0.6
VDS =25V VDS =25V
80µs Pulsed Test 80µs Pulsed Test 0.5
200 200 0.4
0.3
100 100 0.2
0.1
0 0 100µA 1mA 10mA 100mA 1A
0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10
IDS - Drain Source Current
ID -Drain Current (Amperes) VGS -Gate Source Voltage (Volts) Typical Diode Forward Voltage
Typical Transconductance vs. Typical Transconductance vs.
Drain Current Gate - Source Voltage
Normalised RDS(on) And VGS(th)

100 1.8
Coss NOTE:-VGS =0V RDS(on) AT
Ciss VGS =5V
F=1MHz
1.6 ID=200mA
Crss Ciss
C-Capacitance (pF)

1.4

Coss 1.2
10
VGS(th) AT
1.0 ID=1mA
VDS=VGS

0.8
Crss

0.6
1
0.1 1 10 100 -40 0 40 80 120 160
0

VDS -Drain Source Voltage (Volts) T-Temperature ( °C)

Typical Capacitance vs. Normalised RDS(on) And VGS(th)

Drain - Source Voltage vs. Temperature

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