HiPerFETTM VDSS ID25 RDS(on)

Power MOSFETs IXFH/IXFM 35 N30 300 V 35 A 100 mW

IXFH 40 N30 300 V 40 A 85 mW
IXFM 40 N30 300 V 40 A 88 mW
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family trr £ 200 ns

Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)

VDSS TJ = 25°C to 150°C 300 V

VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V (TAB)
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 25°C 35N30 35 A
40N30 40 A TO-204 AE (IXFM)

IDM TC = 25°C, pulse width limited by TJM 35N30 140 A

40N30 160 A
IAR TC = 25°C 35N30 35 A
G
40N30 40 A D

EAR TC = 25°C 30 mJ G = Gate, D = Drain,

S = Source, TAB = Drain
dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W
PD TC = 25°C 300 W
Features
TJ -55 ... +150 °C
TJM 150 °C • International standard packages
• Low RDS (on) HDMOSTM process
Tstg -55 ... +150 °C • Rugged polysilicon gate cell structure
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C • Unclamped Inductive Switching (UIS)
rated
Md Mounting torque 1.13/10 Nm/[Link]. • Low package inductance
- easy to drive and to protect
Weight TO-204 = 18 g, TO-247 = 6 g • Fast intrinsic Rectifier

Applications
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) • DC-DC converters
min. typ. max. • Synchronous rectification
• Battery chargers
VDSS VGS = 0 V, ID = 250 mA 300 V • Switched-mode and resonant-mode
power supplies
VGS(th) VDS = VGS, ID = 4 mA 2 4 V • DC choppers
• AC motor control
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA • Temperature and lighting controls
• Low voltage relays
IDSS VDS = 0.8 • VDSS TJ = 25°C 200 mA
VGS = 0 V TJ = 125°C 1 mA Advantages
RDS(on) VGS = 10 V, ID = 0.5 ID25 35N30 0.100 W • Easy to mount with 1 screw (TO-247)
FH40N30 0.085 W (isolated mounting screw hole)
FM40N30 0.088 W • Space savings
Pulse test, t £ 300 ms, duty cycle d £ 2 % • High power density

IXYS reserves the right to change limits, test conditions, and dimensions. 91523F (07/00)

© 2000 IXYS All rights reserved 1-4

 IXFH 35N30 IXFH 40N30
IXFM 35N30 IXFM 40N30

Symbol Test Conditions Characteristic Values TO-247 AD (IXFH) Outline

(TJ = 25°C, unless otherwise specified)
min. typ. max.

gfs VDS = 10 V; ID = 0.5 ID25, pulse test 22 25 S

C iss 4800 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 745 pF
C rss 280 pF

td(on) 20 30 ns
tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 60 90 ns
td(off) RG = 2 W (External) 75 100 ns Dim. Millimeter Inches
Min. Max. Min. Max.
tf 45 90 ns A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
Qg(on) 177 200 nC C 15.75 16.26 0.610 0.640
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 28 50 nC D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
Qgd 78 105 nC F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
RthJC 0.42 K/W H - 4.5 - 0.177
RthCK 0.25 K/W J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
Source-Drain Diode Characteristic Values N 1.5 2.49 0.087 0.102
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max. TO-204 AE (IXFM) Outline

IS VGS = 0 V 35N30 35 A
40N30 40 A

ISM Repetitive; 35N30 140 A

pulse width limited by TJM 40N30 160 A

VSD IF = IS, VGS = 0 V, 1.5 V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t rr IF = IS, -di/dt = 100 A/ms, TJ = 25°C 200 ns

VR = 100 V TJ = 125°C 350 ns Dim. Millimeter Inches
Min. Max. Min. Max.
A 38.61 39.12 1.520 1.540
B - 22.22 - 0.875
C 6.40 11.40 0.252 0.449
D 1.45 1.60 0.057 0.063
E 1.52 3.43 0.060 0.135
F 30.15 BSC 1.187 BSC
G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225
J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480
Q 3.84 4.19 0.151 0.165
R 25.16 26.66 0.991 1.050

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 2-4
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
 IXFH 35N30 IXFH 40N30
IXFM 35N30 IXFM 40N30

© 2000 IXYS All rights reserved 3-4

 IXFH 35N30 IXFH 40N30
IXFM 35N30 IXFM 40N30

Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area

10
10µs
VDS = 150V
100 Limited by RDS(on)
8 ID = 21A
IG = 10mA
100µs

ID - Amperes
VGE - Volts

1ms
10
4

10ms
2

100ms
0 1
0 25 50 75 100 125 150 175 200 1 10 100 300

Gate Charge - nCoulombs VDS - Volts

Fig.9 Capacitance Curves Fig.10 Source Current vs. Source

80
4500 Ciss
70
4000
3500 60
Capacitance - pF

ID - Amperes

f = 1 MHz
3000 50
VDS = 25V
2500 40
TJ = 125°C
2000
30
1500 TJ = 25°C
Coss 20
1000
Crss 10
500
0 0
0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Vds - Volts VSD - Volts

Fig.11 Transient Thermal Impedance

1
Thermal Response - K/W

D=0.5
0.1
D=0.2
D=0.1
D=0.05

0.01 D=0.02
D=0.01

Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10

Time - Seconds

© 2000 IXYS All rights reserved 4-4