1.
Module 1
Introduction to Electronic
Devices
1.1 Introduction to Diodes and
it’s characteristics and
application
Course coordinator
Smita chopde
Objectives
1. Study about the Bhor’s model
2. Bohr’s model relation to semiconductor
3. Types of semiconductor material
4. Conduction in semiconductor material
5. Ideal diode working with various semiconductor material
6. Diode working in forward and reverse bias condition
7. Voltage and current relation in forward and reverse bias
8. Plotting of the V-I characteristics
9. Greentech application
Study of Bhor’s model
The outer most cell has three
electrons in silicon
semiconductor material
The outer most shell is
unstable as it requires 3
electrons to stabiles itself
In composite semiconductor
material where the n
semiconductor material is
fused to p semiconductor
material in Si semiconductor
material the material takes
the holes from p type
material and stabile it self.
Similar thing happen in p
type material
Bhor’s relation to Semiconductor
material
The silicon material have four valence electrons ,
similarly the germanium has four electrons in he
outermost orbit.
The remaining electrons are occupied by sharing the
electrons with the neighbouring atoms by the
formation of covalent bonds
Figure showing the availability of electrons in
outer most state
Figure showing the sharing of electrons with neighbouring
atoms and formation of covalent bond
Types of semiconductor
material used
Silicon (n type )
Silicon(p type)
Silicon n type semiconductor Silicon p type semiconductor
Conduction in semiconductor material
Conduction in semiconductor material
Conduction in semiconductors
Intense release of electron pairs –hole
And combination of hole and electron
Pair results into flow of current .
Conduction in Devices
PN Junction
The depletion region
The p n junction is forward biased electrons flow from the n region across the junction create a layer of positive charge
Across the junction and when the holes flow from the p region to n region they form a layer of negative charge across the
Junction . This forms a region at the junction which is referred as a depletion region
Energy diagram for the
formation of p n junction and
depletion region
Energy diagram for pn and depletion region
Energy diagram for pn junction
Diode biasing
Forward Biasing
Effect of forward bias on the
depletion region
[Link]
forward-reverse-bias-animation_0.gif
Reverse Bias of P N diode
Diode during the application of reverse bias
after short interval
Observation: [Link] move away from the
pn junction
[Link] move away from the pn junction
3. The depletion region increases in width
V- I characteristics
V-I Characteristics in reverse
bias
Complete V-I Characteristics
[Link]
[Link]
[Link]
Ideal diode Model
Diode in Forward Bias condition
V-I characteristics
Diode in reverse bias condition
Practical Diode model
Vf=0.7 v 𝑉𝑓 = 0.7 𝑉
𝑉 𝑏𝑖𝑎𝑠 − 𝑉𝑓 − 𝑉𝑙𝑖𝑚𝑖𝑡 = 0
𝑉𝑙𝑖𝑚𝑖𝑡 = 𝐼𝑓 ∗ 𝑅𝑙𝑖𝑚𝑖𝑡
𝑉𝑏𝑖𝑎𝑠 − 𝑉𝑓
𝐼𝑓 =
𝑅𝑙𝑖𝑚𝑖𝑡
GreenTech(Photo Voltanic
Summary
1. Evolution of semiconductor
2. Bhor’s model and relation to semiconductor
3. Various types of semiconductor material
4. P N semiconductor
5. PN diode model
6. V-I characteristics of P N diode
7. Eco Friendly application