UNISONIC TECHNOLOGIES CO.
, LTD
2N3904 NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
* Collector-Emitter Voltage: VCEO=40V
* Collector Dissipation: PC(MAX)=625mW
* Complementary to 2N3906 1
TO-92
*Pb-free plating product number: 2N3904L
ORDERING INFORMATION
Order Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
2N3904-T92-B 2N3904L-T92-B TO-92 E B C Tape Box
2N3904-T92-K 2N3904L-T92-K TO-92 E B C Bulk
2N3904L-T92-B
(1)Packing Type (1) B: Tape Box, K: Bulk
(2)Package Type (2) T92: TO-92
(3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-027,B
2N3904 NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
Collector Dissipation PC 625 mW
Junction Temperature TJ 150 ℃
Operating and Storage Temperature TSTG -55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=10µA, IE=0 60 V
Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA,IB=0 40 V
Emitter-Base Breakdown Voltage BVEBO IE=10µA, IC=0 6 V
VCE(SAT)1 IC=10mA, IB=1mA 0.2
Collector-Emitter Saturation Voltage (note) V
VCE(SAT)2 IC=50mA, IB=5mA 0.3
VBE(SAT)1 IC=10mA, IB=1mA 0.65 0.85
Base-Emitter Saturation Voltage (note) V
VBE(SAT)2 IC=50mA, IB=5mA 0.95
Collector Cut-off Current ICBO VCE=30V, VEB=3V 50 nA
Base Cut-off Current IBL VCE=30V, VEB=3V 50 nA
hFE1 VCE=1V, IC=0.1mA 40
hFE2 VCE=1V, IC=1mA 70
DC Current Gain (note) hFE3 VCE=1V, IC=10mA 100 300
hFE4 VCE=1V, IC=50mA 60
hFE5 VCE=1V, IC=100mA 30
Current Gain Bandwidth Product fT VCE=20V, IC=10mA, f=100MHz 300 MHz
Output Capacitance Cob VCB=5V, IE=0, f=1MHz 4 pF
VCC=3V,VBE=0.5V,IC=10mA,
Turn on Time tON 70 ns
IB1=1mA
Turn off Time tOFF IB1=1B2=1mA 250 ns
Note: Pulse test: Pulse Width≦300µs, Duty Cycle≦2%
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2N3904 NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
h FE vs. I C fT vs. I C
Current Gain-Bandwidth Product, fT (MHz)
240 1000
200 VCE=1V 500
DC Current Gain, hFE
VCE=20V
300
160
120 100
80 50
30
40
0 10
0.1 0.3 0.5 1 3 5 10 30 50100 0.1 0.3 0.5 1 3 5 10 30 50100
Collector Current, I C (mA) Collector Current, IC (mA)
V(SAT ) vs. I C C ob vs. VCB
Saturation Voltage, VBE(SAT), VCE(SAT)
10
I C=10IB 6 IE =0
5
Capacitance, Cob (pF)
3 f=1MHz
5
VBE(SAT)
1
4
0.5
0.3 3
0.1 2
0.05 VCE(SAT)
0.03 1
0.01 0
0.1 0.3 0.5 1 3 5 10 30 50100 1 3 5 10 30 50 100
Collector Current, IC (mA) Collector-Base Voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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