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BD263 NPN Darlington Transistor Specs

The document provides specifications for the BD263 silicon NPN Darlington power transistor from INCHANGE Semiconductor. It has a collector-emitter breakdown voltage of 60V, a minimum DC current gain of 750 at 1.5A collector current, and is designed for use as an output device in general-purpose amplifier applications. It has maximum ratings including a collector current of 4A, collector-emitter voltage of 60V, and power dissipation of 36W.

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29 views2 pages

BD263 NPN Darlington Transistor Specs

The document provides specifications for the BD263 silicon NPN Darlington power transistor from INCHANGE Semiconductor. It has a collector-emitter breakdown voltage of 60V, a minimum DC current gain of 750 at 1.5A collector current, and is designed for use as an output device in general-purpose amplifier applications. It has maximum ratings including a collector current of 4A, collector-emitter voltage of 60V, and power dissipation of 36W.

Uploaded by

Andrew
Copyright
© All Rights Reserved
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Available Formats
Download as PDF, TXT or read online on Scribd

INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Darlington Power Transistor BD263

DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 60V
·DC Current Gain—
: hFE = 750(Min) @ IC= 1.5 A

APPLICATIONS
·Designed for use as output devices in complementary
general-purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 80 V

VCEO Collector-Emitter Voltage 60 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 4 A

IB Base Current 0.1 A

Collector Power Dissipation


PC 36 W
TC=25℃

Ti Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W

isc website：[Link] 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Darlington Power Transistor BD263

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA 2.5 V

VBE(on) Base-Emitter On Voltage IC= 1.5A; VCE= 3V 2.5 V

ICEO Collector Cutoff Current VCE= 80V; IB= 0 0.5 mA

VCB= 80V; IE= 0 0.2


ICBO Collector Cutoff Current mA
VCB= 80V; IE= 0;TC= 100℃ 2.0

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA

hFE DC Current Gain IC= 1.5 A ; VCE= 3V 750

isc website：[Link] 2 isc & iscsemi is registered trademark

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