Scribd
Upload
12 views3 pages

2SD1399 NPN Power Transistor Specs

This document provides product specifications for the 2SD1399 silicon NPN power transistor from Inchange Semiconductor. The transistor is housed in a TO-3PN package and is designed for high voltage, high reliability applications such as horizontal output. Key specifications include a collector-emitter breakdown voltage of 800V, saturation voltage below 5V, DC current gain of 8 or higher, and fall time of 0.7 microseconds or less.

Uploaded by

giambi-1
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
12 views3 pages

2SD1399 NPN Power Transistor Specs

This document provides product specifications for the 2SD1399 silicon NPN power transistor from Inchange Semiconductor. The transistor is housed in a TO-3PN package and is designed for high voltage, high reliability applications such as horizontal output. Key specifications include a collector-emitter breakdown voltage of 800V, saturation voltage below 5V, DC current gain of 8 or higher, and fall time of 0.7 microseconds or less.

Uploaded by

giambi-1
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1399

DESCRIPTION
·With TO-3PN package
·Built-in damper diode
·High voltage ,high reliability
·High speed switching

APPLICATIONS
·For horizontal output applications

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings (Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 7 V

IC Collector current (DC) 6 A

ICM Collector current-peak 16 A

PC Collector power dissipation TC=25℃ 50 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1399

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector- emitter breakdown voltage IC=100mA; RBE=∞ 800 V

V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V

V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 7 V

VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V

VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V

ICBO Collector cut-off current VCB=800V; IE=0 10 μA

IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA

hFE DC current gain IC=1A ; VCE=5V 8

fT Transition frequency IC=1A ; VCE=10V 3 MHz

IC=5A;IB1=1A; IB2=-2A,
tf Fall time 0.7 μs
VCC=200V; RL=40Ω

VF Diode forward voltage IEC=6A 2.0 V

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1399

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)

You might also like