STP40NF10

STB40NF10 - STB40NF10-1
N-CHANNEL 100V - 0.024Ω - 50A TO-220/D2PAK/I2PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET

TYPE VDSS RDS(on) ID

STP40NF10 100 V < 0.028 Ω 50 A

STB40NF10 100 V < 0.028 Ω 50 A
STB40NF10-1 100 V < 0.028 Ω 50 A
3
■ TYPICAL RDS(on) = 0.024Ω 3
1
■ EXCEPTIONAL dv/dt CAPABILITY 1
2
D2PAK
■ 100% AVALANCHE TESTED TO-220
■ APPLICATION ORIENTED
CHARACTERIZATION
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & 12
3

REEL
I2PAK

DESCRIPTION INTERNAL SCHEMATIC DIAGRAM

This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.

APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V
VGS Gate- source Voltage ± 20 V
ID(*) Drain Current (continuous) at TC = 25°C 50 A
ID Drain Current (continuous) at TC = 100°C 35 A
IDM (l) Drain Current (pulsed) 200 A
PTOT Total Dissipation at TC = 25°C 150 W
Derating Factor 1 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns
EAS (2) Single Pulse Avalanche Energy 150 mJ
Tstg Storage Temperature
– 55 to 175 °C
Tj Operating Junction Temperature
(●) Pulse width limited by safe operating area (1) I SD ≤40A, di/dt ≤600A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
(*) Limited by Package (2) Starting T j = 25°C, I D = 40A, VDD = 50V
September 2002 1/11
STP40NF10 - STB40NF10 - STB40NF10-1

THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA, VGS = 0 100 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS = Max Rating 1 µA
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C 10 µA
IGSS Gate-body Leakage VGS = ± 20V ±100 nA
Current (VDS = 0)

ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2 2.8 4 V
RDS(on) Static Drain-source On VGS = 10V, ID = 20 A 0.024 0.028 Ω
Resistance

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 25V, ID = 20 A 20 S
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1780 pF
Coss Output Capacitance 265 pF
Crss Reverse Transfer 112 pF
Capacitance

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 STP40NF10 - STB40NF10 - STB40NF10-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 50 V, ID = 20 A 28 ns
RG = 4.7Ω VGS = 10V
tr Rise Time (see test circuit, Figure 3) 63 ns

Qg Total Gate Charge VDD = 80V, ID =40A,VGS = 10V 60 80 nC

Qgs Gate-Source Charge 10 nC
Qgd Gate-Drain Charge 23 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off-Delay Time VDD = 50 V, ID = 20 A, 84 ns
tf Fall Time RG = 4.7Ω, VGS = 10V 28 ns
(see test circuit, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 40 A
ISDM (2) Source-drain Current (pulsed) 160 A
VSD (1) Forward On Voltage ISD = 40 A, VGS = 0 1.3 V
trr Reverse Recovery Time ISD = 40 A, di/dt = 100A/µs, 114 ns
Qrr Reverse Recovery Charge VDD = 25V, Tj = 150°C 456 nC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 8 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.

Safe Operating Area Thermal Impedance

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STP40NF10 - STB40NF10 - STB40NF10-1

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/11
 STP40NF10 - STB40NF10 - STB40NF10-1

Normalized Gate Threshold Voltage vs Normalized On Resistance vs Temperature

Temperature

Source-drain Diode Forward Characteristics Normalized Drain-Source Breakdown vs

Temperature

5/11
STP40NF10 - STB40NF10 - STB40NF10-1

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 STP40NF10 - STB40NF10 - STB40NF10-1

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
DIA 3.75 3.85 0.147 0.151

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STP40NF10 - STB40NF10 - STB40NF10-1

D2PAK MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0º 8º
3

8/11
1
 STP40NF10 - STB40NF10 - STB40NF10-1

TO-262 (I2PAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

e 2.4 2.7 0.094 0.106

E 10 10.4 0.393 0.409

L 13.1 13.6 0.515 0.531

L1 3.48 3.78 0.137 0.149

L2 1.27 1.4 0.050 C 0.055

A

A1
C2

B2
B

e
E

L1

L2 D L
P011P5/E

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STP40NF10 - STB40NF10 - STB40NF10-1
D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)*

TAPE AND REEL SHIPMENT (suffix ”T4”)*

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

TAPE MECHANICAL DATA BASE QTY BULK QTY

1000 1000
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
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 STP40NF10 - STB40NF10 - STB40NF10-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved

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11/11
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