Tutorial - 01
Crystal Structure
ECE:209 (Electronic and Electrical Properties of Materials)
Electrical and Computer Engineering Department
University of Waterloo
Answers
3. Bond length = 0.235 nm
Density = 2.33 g cm-3
4. Maximum wavelength = 0.4 nm
8. {100}
0.291 nm
12.6°
9. a) Atomic concentration = 6.415 × 1028 m-3
Lattice parameter = 0.3147 nm
Atomic radius = 0.1363 nm
b) Atomic concentration = 5.901 × 1028 m-3
Lattice parameter = 0.4077 nm
Atomic radius = 0.1442 nm
10. a) Number of atoms per unit volume = 6.303 × 1028 m-3
Density = 19.23 × 103 kg m-3
b) Number of atoms per unit volume = 6.64 × 1028 m-3
Density = 21.51 × 103 kg m-3
11. a) Density = 5 × 1028 m-3
Atomic concentration = 2.33 × 103 kg m-3
b) Density = 4.44 × 1028 m-3
Atomic concentration = 5.33 × 103 kg m-3
13. a) 50.0 atoms/nm3
b) n100 = 6.78 atoms/nm2 or 6.78 × 1018 atoms/m2
n110 = 9.59 atoms/nm2 or 9.59 × 1018 atoms/m2
n111 = 7.83 atoms/nm2 or 7.83 × 1018 atoms/m2
c) Solution:
Molar mass of SiO2: Mat = 28.09 × 10-3 kg/mol + 2 × 16 × 10-3 kg/mol = 60.09 × 10-3
kg/mol
Density of SiO2: ρ = 2.27 × 103 kg m-3
Let n be the number of SiO2 molecules per unit volume, then:
M at
ρ =n
NA
∴ n=
N Aρ
=
( )(
6.022 × 10 23 mol−1 2.27 × 103 kg m −3 )
= 2.27 × 1028 molecules per m3
M at ( −3
60.09 × 10 kg/mol )
Or, converting to molecules per nm3:
2.27 ×10 28 molecules/m 3
n= = 22.7 molecules per nm 3
(10 9
nm/m )
3
Oxide has less dense packing so it has a more open structure. For every 1 micron
of oxide formed on the crystal surface, only about 0.5 micron of the Si crystal is
consumed