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BJT Transistor AC Analysis and Modeling

This document discusses the re transistor model used for small signal AC analysis of BJTs. The re model uses a diode and current source to model the transistor's behavior. It is designed for specific circuit conditions and is sensitive to DC levels. The common-base configuration is described, which has low input impedance, high output impedance, current gain less than unity, and very high voltage gain. Phase relationships and example calculations are also provided. Finally, the effects of load and source resistance on gain are discussed.

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Muhammad Ali
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0% found this document useful (0 votes)
45 views17 pages

BJT Transistor AC Analysis and Modeling

This document discusses the re transistor model used for small signal AC analysis of BJTs. The re model uses a diode and current source to model the transistor's behavior. It is designed for specific circuit conditions and is sensitive to DC levels. The common-base configuration is described, which has low input impedance, high output impedance, current gain less than unity, and very high voltage gain. Phase relationships and example calculations are also provided. Finally, the effects of load and source resistance on gain are discussed.

Uploaded by

Muhammad Ali
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

23/09/2016

BJT AC Analysis Chapter

9/23/2016 msa2016

BJT Transistor Modeling


• A model is an equivalent circuit that represents the AC
characteristics of the transistor.

• A model uses circuit elements that approximate the


behavior of the transistor.

• There are two models commonly used in small signal AC


analysis of a transistor:

– re model

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The re Transistor Model

• BJTs are basically current-controlled devices; therefore the re model


uses a diode and a current source to duplicate the behavior of the
transistor.

• One disadvantage to this model is its sensitivity to the DC level. This


model is designed for specific circuit conditions.

9/23/2016 msa2016

Common-Base Configuration
I c  I e I e    1I b  I b re 
26 mV
Ie
Input impedance:
Z i  re

Output impedance:
ro = output impedance for early
Z o  ro voltage situtaion

Voltage gain:
R L RL
A V  ( IoRL ) / Iere  (IeRL ) / Iere   When loadded
re re
with RL

Current gain:
A i    1
ro

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Common-Base Configuration

• The input is applied to the


emitter.
• The output is taken from the
collector.
• Low input impedance.
• High output impedance.
• Current gain less than unity.
• Very high voltage gain.
• No phase shift between input
and output.

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Phase Relationship

Ii Ie Ic
e c Vo
Vi Io
Ic=Ie +
+ RE re RC vo t
t Vi ~
- ro
_
b
Zi Zo

AV has a positive sign, thus, Vi and Vo are in phase

If given the value of Vi , you can calculate Vo

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Calculations
Input impedance:
Z i  R E || re

Output impedance:
Zo  R C

Voltage gain:
Vo R C R C
Av   
Vi re re

Current gain:
I
A i  o     1
Ii

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Example 1

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+VCC Effect Of RL and RS


+VCC
RC

vo Loaded RC
+VCC V
AVWL = o vo
Vi
vi
RC RL
RE
vo
Unloaded + RS RE
-VEE RL ~
vS -
Vo vi
AVNL = -VEE
Vi
RE Loaded with RS
Vo
-VEE AVs =
Vs with RL and Rs

For the same configuration,

AVNL > AVWL > AVs


The gain that results due to the application of a load or
source resistance can have a dramatic effect on all the
amplifier parameters

Two methods to analyze networks with an applied load


and/or source resistance:
 re model

 Two-port equivalent model

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With RL and RS

+VCC

RC
C2
vo

RL

C1
+ RS RE
~
vS -
CB Configuration (npn)
-VEE

:: nuraa001::FKE::UTeM::
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re model
RS Ii Ie Ic
e c
+ Io
Ic=Ie +
+ Vi RE re RC RL V
~ ro o
VS - _ _
b
Zi Zo

You can simplify the model if

RE  10re OR ro  10RC
Determine re and ro from dc analysis
Impedance:

Zi = RE || re Zo = RC || ro
 re  RC ro  10RC
RE  10re

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Load resistance effect, Load and source resistance effect,

AVWL= Vo = Ie(RC||RL||ro) AVs = Vo = Vo Vi = AVWL Zi


X
Vi Vi Vs Vi Vs Zi+Rs
= IeRC||RL||ro = (RC||RL||ro) Zi
X
reIe re Zi+RS
= (RC||RL||ro)
re

Current gain,
Ai = Io 𝑉𝑜/𝑍𝑜 = AVWL Zi
=
𝑉𝑖/𝑍𝑖
Ii RL
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Common-Emitter Configuration
The diode re model can be replaced by
the resistor re. Then the input side for Zi
is Vi /Ib

I e    1I b  I b

Ic

26 mV
re  βIb
Ie βre

more…

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Common-Emitter Configuration

Input impedance:
Z i  re Ic
Output impedance:
Z o  ro   βIb
βre
Voltage gain:
RL
AV  
re

Current gain:
A i   ro  

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Common-Emitter Configuration
+VCC
+VCC
Fixed-Bias
RC
RB RC
vo RB
vo
vi
vi
+VCC

RE
CE
RC
R1
vo
Emitter-Bias (Unbypassed)
vi

Voltage-Divider Bias Emitter-Bias (Bypassed)


R2 RE
CE

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Common-Emitter Fixed-Bias
Configuration
• The input is applied to the base
• The output is from the collector
• High input impedance
• Low output impedance
• High voltage and current gain
• Phase shift between input and
output is 180

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Common-Emitter Fixed-Bias
Configuration

AC equivalent

re model

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Common-Emitter Fixed-Bias Calculations


Input impedance:
Z i  R B ||  re
Z i   re R E  10 re

Output impedance:
Z o  R C || rO
Z o  R C ro  10R C

Voltage gain: Current gain:


V (R || r )
Av  o   C o I  R B ro
Vi re Ai  o 
I i (ro  R C )(R B   re )
RC
Av   ro  10R C
re A i   ro  10RC , R B  10re

Current gain from voltage gain:


Zi
Ai  A v
RC

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Common-Emitter Voltage-Divider Bias

re model requires you to determine , re, and ro.

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Common-Emitter Voltage-Divider Bias


Calculations
Input impedance:
R   R 1 || R 2
Z i  R  ||  re
Output impedance:

Z o  R C || ro Current gain:
I  R ro
Z o  R C ro  10R C Ai  o 
I i (ro  R C )(R    re )
I R
Voltage gain: Ai  o  r  10R C
I i R    re o
Vo  R C || ro I
Av   A i  o   ro  10R C , R   10 re
Vi re Ii
Vo R
Av    C ro  10R C
Vi re Current gain from voltage gain:
Z
Ai  A v i
RC
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Common-Emitter Emitter-Bias
Configuration -Unbypassed

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Impedance Calculations
Input impedance:
Z i  R B || Z b
Z b   re  (  1)R E
Z b  (re  R E )
Z b  R E

Output impedance:
Zo  R C

9/23/2016 msa2016

Gain Calculations
Voltage gain:
Vo R C
Av  
Vi Zb
Vo RC
Av  
Vi re  R E Z b  (re  R E )
Vo R
Av    C Z b  R E
Vi RE

Current gain: Current gain from voltage gain:


I R B Zi
Ai  o  Ai  A v
Ii R B  Zb RC

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Effect Of RL and RS
Impedance Calculation: Fixed Bias
Input impedance, Zi

Zi = RB || re

Output impedance, Zo

Zo = RC || ro

Ii RS Ib Ic Io
b c
+ + +
vs vi RB re ro RC RL vo
_ _ Ic=Ib _
e
Zi :: nuraa001::FKE::UTeM::
Zo 25

Gain Calculation
Without RL
Voltage gain, AVNL Voltage gain, AVs
Vo = -IoRC Vo = AVNL Vi
= - ro Ib Vs Vs
( )RC = AVNL Zi
RC + ro
Vi Zi+RS
= -ro (re) Current gain, Ai
(R + r )RC
C o Io = - AVNL Zi
Vo = -roRC Is RC
Vi re (RC + ro)
Ii RS Ib Ic Io
b c
+ +
+
ro RC vo
vs vi RB re RL
_ Ic=Ib _
_
e
:: nuraa001::FKE::UTeM::
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With RL
Voltage gain, AVWL Voltage gain, AVs
Vo = -Ic (Zo||RL) Vo = AVWL Vi
= -Ib(Zo||RL) Vs Vs
= - Vi (Zo||RL) = AVWL Zi
re Zi+RS
Vo = - (Zo||RL) Current gain, Ai
Vi re Io = - AVWL Zi
Is RL
Ii RS Ib Ic Io
b c
+ +
+
vs RB re ro RC RL vo
vi
_ Ic=Ib _
_
e
Zi Zo

:: nuraa001::FKE::UTeM::

27

Simplified Equivalent Circuit

RB  10re OR ro  10RC
Ii RS Ib Ic Io
b c
+ +
+
RC RL vo
vs vi re
_ Ic=Ib _
_
e
Zi Zo
THUS,
Input impedance, Zi Voltage gain, AVNL

Zi = re Vo = -IoRC = -(-Ib) RC = Vi RC


re
Output impedance, Zo
AVNL = Vo = -RC
Zo = RC Vi re
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Simplified Equivalent Circuit


IF AND ONLY IF
RB  10re OR ro  10RC
Ii RS Ib Ic Io
b c
+ +
+
RC RL vo
vs vi re
_ Ic=Ib _
_
e
Zi Zo
AND,
Voltage gain, AVWL Current gain, Ai
Vo = -IoRL = -IbRCRL = - ViRCRL Io = RC = RC

RC+RL re (RC+RL) Ii RC+RL RC+RL
AVWL = Vo = -RCRL Ai = Io = -AVWLZi
Vi re (RC+RL) Ii RL
:: nuraa001::FKE::UTeM::
29

Emitter-Bias
(a)Bypassed
+VCC

RC
RB
vo
RS C2
vi
C1
RL
RE
CE

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re model

Ii RS Ib Ic Io
b c
+ + +
vs RB re ro RC RL vo
vi
_ _ Ic=Ib _
e
Zi Zo

The re model of this configuration is THE SAME with CE


fixed-bias configuration.

:: nuraa001::FKE::UTeM::
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Emitter-Bias with Rs and RL


(b)Unbypassed
+VCC

RC
RB
vo
RS C2
vi
C1
RL
RE

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re model
Approximate
Ii RS Ib c Ic Io analysis
b
+
(ignore ro)
+ + Ic=Ib
re ro

vs vi RB RC RL
Vi Vi
e vo = = re+RE
RE Ie (+1)Ib
_ _ _

Zi Zo

Ii RS Ib Ic Io
b c
Zb
Vi
= (+1)(re+RE) + + +
Ib vs (re+RE) RC RL vo
vi RB
 (re +RE) _ Ic=Ib _
_

Zi e Zo

:: nuraa001::FKE::UTeM::
Go to Fixed-Bias 33

Ii RS Ib Ic Io
b c
+ +
+ (re+RE)
vs RB RC RL vo
vi
_ _ Ic=Ib _

Zi e Zo

Input impedance, Zi

Zi = RB||(RE+ re)
Output impedance, Zo

Zo = RC
No-Load Voltage Gain, AVNL

AVNL = -RC
Find AVWL, AVs
and Ai
RE+re
:: nuraa001::FKE::UTeM::
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