Scribd
Upload
28 views4 pages

TIP35 NPN Transistor Specifications

This document provides specifications for Inchange Semiconductor's TIP35/35A/35B/35C silicon NPN power transistors. The transistors are in a TO-3PN package and are designed for general purpose power amplifier and switching applications with current gains down to 25 at collector currents of 1.5 amps. Key specifications include absolute maximum ratings for collector-base voltage, collector-emitter voltage, collector current and power dissipation. Thermal and electrical characteristics such as saturation voltages, current gains, and transition frequencies are also listed. Dimensional outlines for the TO-3PN package are provided.

Uploaded by

Jose David Perez Parada
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
28 views4 pages

TIP35 NPN Transistor Specifications

This document provides specifications for Inchange Semiconductor's TIP35/35A/35B/35C silicon NPN power transistors. The transistors are in a TO-3PN package and are designed for general purpose power amplifier and switching applications with current gains down to 25 at collector currents of 1.5 amps. Key specifications include absolute maximum ratings for collector-base voltage, collector-emitter voltage, collector current and power dissipation. Thermal and electrical characteristics such as saturation voltages, current gains, and transition frequencies are also listed. Dimensional outlines for the TO-3PN package are provided.

Uploaded by

Jose David Perez Parada
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors TIP35/35A/35B/35C

DESCRIPTION
・With TO-3PN package
・Complement to type TIP36/36A/36B/36C
・DC current gain hFE=25(Min)@IC=1.5A

APPLICATIONS
・Designed for use in general purpose
power amplifier and switching applications.

PINNING

PIN DESCRIPTION

1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta=℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

TIP35 40

TIP35A 60
VCBO Collector-base voltage Open emitter V
TIP35B 80

TIP35C 100

TIP35 40

TIP35A 60
VCEO Collector-emitter voltage Open base V
TIP35B 80

TIP35C 100

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 25 A

ICM Collector current-peak 40 A

IB Base current 5 A

PC Collector power dissipation TC=25℃ 125 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -65~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal resistance junction to case 1.0 ℃/W


Inchange Semiconductor Product Specification

Silicon NPN Power Transistors TIP35/35A/35B/35C

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

TIP35 40

TIP35A 60
Collector-emitter
V(SUS)CEO IC=30mA ;IB=0 V
sustaining voltage
TIP35B 80

TIP35C 100

VCEsat-1 Collector-emitter saturation voltage IC=15A ;IB=1.5A 1.8 V

VCEsat-2 Collector-emitter saturation voltage IC=25A; IB=5A 4.0 V

VBE-1 Base-emitter on voltage IC=15A ; VCE=4V 2.0 V

VBE-2 Base-emitter on voltage IC=25A ; VCE=4V 4.0 V

TIP35/35A VCE=30V; IB=0


Collector
ICEO 1.0 mA
cut-off current
TIP35B/35C VCE=60V; IB=0

TIP35 VCE=40V;VEB=0

TIP35A VCE=60V;VEB=0
Collector
ICES 0.7 mA
cut-off current
TIP35B VCE=80V;VEB=0

TIP35C VCE=100V;VEB=0

IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA

hFE-1 DC current gain IC=1.5A ; VCE=4V 25

hFE-2 DC current gain IC=15A ; VCE=4V 15 75

fT Transition frequency IC=1A ; VCE=10V 3 MHz

2
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors TIP35/35A/35B/35C

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

3
Inchange Semiconductor Product Specification

Silicon NPN Power Transistors TIP35/35A/35B/35C

You might also like