BSP 17

SIPMOS ® Small-Signal Transistor

• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V

Pin 1 Pin 2 Pin 3 Pin 4

G D S D

Type VDS ID RDS(on) Package Marking

BSP 17 50 V 3.2 A 0.1 Ω SOT-223 BSP 17

Type Ordering Code Tape and Reel Information

BSP 17 Q67000-S220 E6327

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TA = 27 °C 3.2
DC drain current, pulsed IDpuls
TA = 25 °C 12.8
Avalanche energy, single pulse EAS mJ
ID = 3.2 A, VDD = 25 V, RGS = 25 Ω
L = 586 µH, Tj = 25 °C 6
Gate source voltage VGS ± 20 V
Power dissipation Ptot W
TA = 25 °C 1.8

Semiconductor Group 1 Sep-12-1996

 BSP 17

Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air RthJA ≤ 70 K/W
Therminal resistance, junction-soldering point 1) RthJS ≤ 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = 0.25 mA, Tj = 0 °C 50 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA 2.1 3 4
Zero gate voltage drain current IDSS µA
VDS = 50 V, VGS = 0 V, Tj = 25 °C - 0.1 1
VDS = 50 V, VGS = 0 V, Tj = 125 °C - 10 100
Gate-source leakage current IGSS nA
VGS = 20 V, VDS = 0 V - 10 100
Drain-Source on-state resistance RDS(on) Ω
VGS = 10 V, ID = 3.2 A - 0.09 0.1

Semiconductor Group 2 Sep-12-1996

 BSP 17

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A 2.5 4.8 -
Input capacitance Ciss pF
VGS = 0 V, VDS = 25 V, f = 1 MHz - 450 600
Output capacitance Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 220 350
Reverse transfer capacitance Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz - 85 150
Turn-on delay time td(on) ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 20 30
Rise time tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 40 60
Turn-off delay time td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 55 70
Fall time tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω - 40 55

Semiconductor Group 3 Sep-12-1996

 BSP 17

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TA = 25 °C - - 3.2
Inverse diode direct current,pulsed ISM
TA = 25 °C - - 12.8
Inverse diode forward voltage VSD V
VGS = 0 V, IF = 6.4 A, Tj = 25 °C - 1.05 1.2
Reverse recovery time trr ns
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs - 40 -
Reverse recovery charge Qrr µC
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs - 0.04 -

Semiconductor Group 4 Sep-12-1996

 BSP 17

Power dissipation Drain current

Ptot = ƒ(TA) ID = ƒ(TA)
parameter: VGS ≥ 10 V

2.0 3.4

W A

2.8
Ptot 1.6 ID

1.4 2.4

1.2 2.0

1.0
1.6

0.8
1.2
0.6
0.8
0.4

0.2 0.4

0.0 0.0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TA TA

Safe operating area ID=f(VDS) Transient thermal impedance

parameter : D = 0, TC=25°C Zth JA = ƒ(tp)
parameter: D = tp / T

10 2
K/W

10 1

ZthJC
10 0

10 -1

D = 0.50
10 -2
0.20
0.10
10 -3 0.05
single pulse 0.02

10 -4 0.01

10 -5
-8 -7 -6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10 10 s 10
tp

Semiconductor Group 5 Sep-12-1996

 BSP 17

Typ. output characteristics Typ. drain-source on-resistance

ID = ƒ(VDS) RDS (on) = ƒ(ID)
parameter: tp = 80 µs , Tj = 25 °C parameter: tp = 80 µs, Tj = 25 °C
l

7.5 0.32
Ptot = 2W
A j a b
i
khgfed c Ω
6.5
VGS [V]
ID 6.0 a 4.0 RDS (on)
b 4.5 0.24
5.5
c 5.0
5.0
d 5.5
0.20
4.5 e 6.0

4.0 b f 6.5
g 7.0 0.16
3.5 h 7.5
c
3.0 i 8.0
0.12 d
j 9.0 e
2.5 gi fh
k 10.0 k j
2.0 l
a l 20.0 0.08
1.5
1.0 0.04 VGS [V] =
a b c d e f g h i j k l
0.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0.0 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 A 4.5
VDS ID

Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs parameter: tp = 80 µs,

8 7.0

S
A
6.0
ID gfs 5.5
6
5.0

5 4.5

4.0

4 3.5

3.0
3
2.5

2.0
2
1.5

1.0
1
0.5
0 0.0
0 1 2 3 4 5 6 7 8 V 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 A 7.5
VGS ID

Semiconductor Group 6 Sep-12-1996

 BSP 17

Drain-source on-resistance Gate threshold voltage

RDS (on) = ƒ(Tj ) VGS (th) = ƒ(Tj)
parameter: ID = 3.2 A, VGS = 10 V parameter: VGS = VDS, ID = 1 mA

0.26 4.6
Ω V 98%
0.22 4.0
RDS (on) VGS(th)
0.20 3.6

0.18 3.2 typ

0.16 2.8
0.14
2.4 2%
98%
0.12 typ
2.0
0.10
1.6
0.08
1.2
0.06

0.04 0.8

0.02 0.4
0.00 0.0
-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)
parameter:VGS=0V, f = 1 MHz parameter: Tj , tp = 80 µs

10 1 10 2

nF A
C IF

10 0 10 1

Ciss

Coss

10 -1 10 0
Crss Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 -2 10 -1
0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Semiconductor Group 7 Sep-12-1996

 BSP 17

Avalanche energy EAS = ƒ(Tj ) Drain-source breakdown voltage

parameter: ID = 3.2 A, VDD = 25 V V(BR)DSS = ƒ(Tj)
RGS = 25 Ω, L = 586 µH

6.5 60
mJ V

5.5 58
EAS V(BR)DSS 57
5.0
56
4.5
55
4.0
54
3.5 53
3.0 52

2.5 51
50
2.0
49
1.5
48
1.0
47
0.5 46
0.0 45
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 160
Tj Tj

Semiconductor Group 8 Sep-12-1996

 BSP 17

Package outlines
SOT-223
Dimensions in mm

Semiconductor Group 9 Sep-12-1996