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Semiconductor Physics: Energy Band Structure

This document discusses the energy band structure and effective masses of semiconductor materials. It contains exercises on: 1) Calculating the effective mass of a hypothetical material at different wave vectors from its energy band dispersion equation. 2) Deriving an expression for the effective mass near the conduction band minimum of GaAs and calculating its value. 3) Calculating lattice constants and mismatches for pseudomorphic GaInAs and GaInAsP layers grown on an InP substrate. 4) Calculating the bandgap energies and corresponding wavelengths for two quaternary compound semiconductor materials lattice matched to InP.

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18 views1 page

Semiconductor Physics: Energy Band Structure

This document discusses the energy band structure and effective masses of semiconductor materials. It contains exercises on: 1) Calculating the effective mass of a hypothetical material at different wave vectors from its energy band dispersion equation. 2) Deriving an expression for the effective mass near the conduction band minimum of GaAs and calculating its value. 3) Calculating lattice constants and mismatches for pseudomorphic GaInAs and GaInAsP layers grown on an InP substrate. 4) Calculating the bandgap energies and corresponding wavelengths for two quaternary compound semiconductor materials lattice matched to InP.

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Mostafa
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ELEC-3140 Semiconductor physics Oct 1, 2019

Exercise 3: Energy band structure, pseudomorphic layers

1. Let the hypothetical energy band dispersion of a material be


E ( k ) = E0 é1 - e-2 a k ù ,
2 2

ë û
where a is the lattice constant of the material. Calculate a) the effective mass with the wave
vector value of k = 0. b) At what value of the vave vector k does the electron have the highest
dw
speed? (Use group velocity vg = ) , c) Calculate the effective mass at the edge of the
dk
Brillouin zone.

2. The conduction band of GaAs changes from parabolic to non-parabolic fairly close to the
conduction band minimum Ec. The energy is more accurately described by equation:

E - Ec = ak2 - bk4 (a>0, b>0)

a) Derive an expression for the effective mass me* in the


conduction band.
b) Calculate m *e at the conduction band minimum.
c) The electrons in GaAs can move from G minimum to
L minimum if the electric field applied over the structure
is sufficiently large. (Band structure of GaAs in the figure.)
Describe qualitatively how the electron effective mass changes.

3. Pseudomorphic Ga0.50In0.50As and Ga0.2In0.8As0.4P0.6 layers have been grown epitaxially on an


InP substrate. a) Calculate the lattice constants of the free-standing layer materials. b)
Calculate the relative lattice mismatch of the layer materials on an InP substrate. c) Calculate
the vertical component of the lattice constant of the layer materials on the substrate.

4. Calculate the bandgap energy and the corresponding wavelength for a) Ga0.47In0.53As and b)
Ga0.2In0.8As0.4P0.6. These compositions are nearly lattice matched to InP and, therefore, can
be used in InP-based devices.

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