RDA5876

SINGLE CHIP FOR BLUETOOTH & FM RADIO TUNER

Rev.1.2–07.2011

1 General Description
32 31 30 29 28 27 26 25

UART_RX 1 24 NC
RDA5876 integrates industry-lead Bluetooth and PCM_DOUT 2 23 FM_IP

FM radio tuner into one chip and is optimized for PCM_DIN 3 GND PAD 22 FM_IN

mobile applications. Bluetooth and FM can work PCM_CLK 4

RDA5876
21 AGPIO1/BT_PRIORITY

PCM_SYNC 5 20 AGPIO0/BT_ACTIVE
simultaneously and independently, with low power VIO 6 32 Pins 19 RF

consumption levels target to battery powered VOUT18 7 18 NC

DCDC_SW 8 17 NC
devices. For the highest integration level, the
required board space has been minimized and 9 10 11 12 13 14 15 16

customer cost has been reduced. Manufacturers

can easily and fast integrate RDA5876 on their
product to enable a rapid time to market. Figure1-1. RDA5876 Top View

RDA5876 uses CMOS process with a compact

4*4mm 32-pin QFN package.

1.1 Bluetooth Features

z CMOS single-chip fully-integrated radio and z Up-to 4Mbps high speed UART HCI support
baseband z Support AFH
z Compliant with Bluetooth 2.1 + EDR specification z Support 3-wire WIFI Co-existence handshake
z Bluetooth Piconet and Scatternet support signals
z ARM7-based microprocessor with on-chip ROM z Low power consumption
and RAM z Minimum external component
z Meet class 2 and class 3 transmitting power z Internal 32k LPO.
requirement, support class1 operation with external
power amplifier
z Provides +10dbm transmitting power
z NZIF receiver with -90dBm sensitivity
z Battery power supply directly with internal LDO
z Support DCXO with internal oscillator circuit

Copyright © RDA Microelectronics Inc. 2009. All rights are reserved.

The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in
part without prior written permission of RDA.
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

z Programmable de-emphasis (50/75 μs)

1.2 FM Features z Receive signal strength indicator (RSSI)
z Bass boost
z CMOS single-chip fully-integrated FM tuner z Volume control
z Low power consumption z Line-level analog output voltage
¾ Total current consumption lower than 20mA at z I2C control bus interface
3.0V power supply z Directly support 32Ω resistance loading
z Support worldwide frequency band z Integrated LDO regulator
¾ 50 -115 MHz ¾ 1.8 to 5.5 V operation voltage
z Support flexible channel spacing mode
¾ 100KHz, 200KHz, 50KHz and 25KHz
z Support RDS/RBDS
z Digital low-IF tuner
¾ Image-reject down-converter
¾ High performance A/D converter
¾ IF selectivity performed internally
z Fully integrated digital frequency synthesizer
¾ Fully integrated on-chip RF and IF VCO
¾ Fully integrated on-chip loop filter
z Autonomous search tuning
z Support 32.768KHz crystal oscillator
z Digital auto gain control (AGC) Digital adaptive
noise cancellation
¾ Mono/stereo switch
¾ Soft mute
¾ High cut

1.3 Applications

z Mobile handset
z MP3,MP4 and PMP
z PDA
z Cordless phone

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part without prior written permission of RDA. Page 2 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

2 Table of Contents
1 General Description ....................................................................................................................................1
1.1 Bluetooth Features .............................................................................................................................1
1.2 FM Features........................................................................................................................................2
1.3 Applications ........................................................................................................................................2
2 Table of Contents.........................................................................................................................................3
3 Bluetooth Section Functional Description.................................................................................................4
4 Bluetooth Section Features.........................................................................................................................5
5 Bluetooth Section Electrical Characteristics ............................................................................................6
6 Bluetooth Section Radio Characteristics...................................................................................................8
7 FM Section Functional Description ......................................................................................................... 11
8 FM Section Electrical Characteristics.....................................................................................................13
9 FM Section Receiver Characteristics ......................................................................................................14
10 Pins Description.........................................................................................................................................15
11 Application Circuit.................................................................................................... 错误！未定义书签。
12 Package Physical Dimension ....................................................................................................................18
13 PCB Land Pattern.....................................................................................................................................19
14 Change List................................................................................................................................................21
15 Contact Information .................................................................................................................................22

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part without prior written permission of RDA. Page 3 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

3 Bluetooth Section Functional Description

Figure3-1. RDA5876 Bluetooth Block Diagram

RDA5876 is designed for use in UART HCI with handset chipsets. As shown in Figure3-1, RDA5876
integrates radio unit, baseband core, ARM7 core and memory which provides a complete lower Bluetooth
protocol stack including the LC, LM and HCI interface.

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part without prior written permission of RDA. Page 4 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

4 Bluetooth Section Features

„ Radio
♦ Build-in TX/RX switch
♦ Fully integrated synthesizer without any external component
♦ Support DCXO or external reference clock direct input
♦ Class2 and class3 transmit output power supported and over 30dB dynamic control range
♦ Supports π/4 DQPSK and 8DPSK modulation
♦ High performance in receiver sensitivity and over 80dB dynamic range
♦ Integrated channel filter

„ Auxiliary features
♦ On-chip regulator to support battery power supply directly
♦ Power management support low power mode
♦ Support share handset system reference clock
♦ Support 3-wire wifi cooperation handshake protocol
♦ Support external class1 PA and antenna switch

„ Baseband
♦ Internal RAM allows fully speed data transfer, mixed voice and data, and fully piconet operation
♦ Logic for forward error correction, header error control, access code correlation, CRC,
demodulation , encryption bit stream generation, whitening and transmit pulse shaping
♦ Support eSCO and AFH
♦ Support up to Bluetooth v2.1 + EDR
♦ Support A-law, μ-law and CVSD digitize audio CODEC in PCM interface

„ Interface
♦ Provides UART HCI interface, up-to 4Mbps
♦ Provides I2C interface for host to do configuration
♦ Provides PCM audio interface
♦ Provides 3-wire and 2-wire WIFI Co-existence handshake interface

„ Bluetooth Stack
♦ Compliant with Bluetooth 2.1 + EDR specification

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part without prior written permission of RDA. Page 5 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

5 Bluetooth Section Electrical Characteristics

Table 5-1 DC Electrical Specification (Recommended Operation Conditions):
SYMBOL DESCRIPTION MIN TYP MAX UNIT
VBAT Supply Voltage from battery or LDO 3.3 4.0 4.2 V
Tamb Ambient Temperature -20 27 +50 ℃
VIL CMOS Low Level Input Voltage 0 0.3*VIO V
VIH CMOS High Level Input Voltage 0.7*VIO VIO V
VTH CMOS Threshold Voltage 0.5*VIO V
Notes:
1. VIO=1.8~3.3V

Table 5-2 DC Electrical Specification (Absolute Maximum Ratings):

SYMBOL DESCRIPTION MIN TYP MAX UNIT
Tamb Ambient Temperature -20 +80 °C
IIN Input Current -10 +10 mA
VIN Input Voltage -0.3 VIO+0.3 V
Vlna LNA Input Level +10 dBm

Table 5-3 LDO Power consumption specification

(VBAT = 4.0 V, VIO = 2.8V, TA = +27℃, RF 9dBm, LDO mode unless otherwise specified)

STATE DESCRIPTION Condition TYP UNIT

Headset voice HV3 type 18 mA
Headset SNIFF 500ms cycle NO INQUIRE and PAGE SCAN 0.5 mA
HCI only active 5.7 mA
Both SCAN 1.28S cycle INQUIRE and PAGE SCAN 1.0 mA
DeepSleep 26Mhz crystal off Ivbat=105uA,Ivio=13uA,External 118 μA
32K input
internal LDO off LDO_ON off Ivbat=6uA,Ivio=1uA 7 μA

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part without prior written permission of RDA. Page 6 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

Table5-4 DCDC Power consumption specification

(VBAT = 4.0 V, VIO = 2.8V, TA = +27℃, RF 9dBm, DCDC mode unless otherwise specified)

STATE DESCRIPTION Condition TYP UNIT

Headset voice HV3 12 mA
Headset SNIFF 500ms cycle NO INQUIRE and PAGE SCAN 0.5 mA
HCI only active 3.8 mA
Both SCAN 1.28S cycle INQUIRE and PAGE SCAN 0.8 mA
DeepSleep 26Mhz crystal off Ivbat=105uA,Ivio=13uA, 118 μA
External 32K input
internal LDO off LDO_ON off Ivbat=6uA,Ivio=1uA 7 μA

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part without prior written permission of RDA. Page 7 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

6 Bluetooth Section Radio Characteristics

Table 6-1 Receiver Characteristics ------ Basic Data Rate
(VBAT = 4.0 V, TA = 27°C, unless otherwise specified)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

General specifications
Sensitivity @0.1% BER / -90 / dBm
Maximum received signal@0.1% BER 0 / / dBm
C/I c-channel / +10 / dB
F=F0 + 1MHz / / -5 dB
F=F0 - 1MHz / / 0 dB
F=F0 + 2MHz / / -33 dB
Adjacent channel selectivity C/I
F=F0 - 2MHz / / -30 dB

F=F0 + 3 MHz / / -45 dB

F=F0 - 3MHz / / -40 dB

Adjacent channel selectivity C/I F=Fimage / / 0 dB
30MHz–2000MHz -10 / / dBm
2000MHz–2400MHz -27 / / dBm
Out-of-band blocking performance
2500MHz–3000MHz -27 / / dBm
3000MHz–12.5GHz -10 / / dBm
Intermodulation -35 / / dBm
Spurious output level -150 / / dBm/Hz

Notes:

Table 6-2 Transmit Characteristics ------ Basic Data Rate

(VBAT = 4.0V, TA = 27 °C, unless otherwise specified)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

General specifications
Maximum RF transmit power / +10 / dBm
RF power control range 30 / / dB

20dB band width / 0.9 / MHz

Adjacent channel transmit power F=F0 + 1MHz / -35 / dBm
F=F0 - 1MHz / -34 / dBm
F=F0 + 2MHz / -55 / dBm
F=F0 - 2MHz / -55 / dBm
F=F0 + 3MHz / -58 / dBm
F=F0 - 3MHz / -58 / dBm
F=F0 + >3MHz -58 / / dBm

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RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

F=F0 - >3MHz -58 / / dBm

△f1avg Maximum modulation / 164 / kHz
△f2max Minimum modulation / 145 / kHz
△f2avg/△f1avg 0.80 / / /
ICFT / +4 / kHz
Drift rate / 0.1 / kHz/50us

Drift (1 slot packet) / -2 / kHz

Drift (5 slot packet) / -2 / kHz

Notes:

Table 6-3 Receiver Characteristics ------ Enhanced Data Rate

(VBAT = 4.0 V, TA = 27°C, unless otherwise specified)

PARAMETER CONDITIONS MIN TYP MAX UNIT

π/4 DQPSK
Sensitivity @0.01% BER / -87 / dBm
Maximum received signal@0.1% BER 0 / / dBm
C/I c-channel / / +13 dB
F=F0 + 1MHz / / +5 dB
F=F0 - 1MHz / / 0 dB
F=F0 + 2MHz / / -30 dB
Adjacent channel selectivity C/I
F=F0 - 2MHz / / -20 dB
F=F0 + 3MHz / / -40 dB
F=F0 - 3MHz / / -40 dB
Adjacent channel selectivity C/I F=Fimage / / -7 dB

8DPSK
Sensitivity @0.01% BER / -81 / dBm
Maximum received signal@0.1% BER 0 / / dBm
C/I c-channel / / +18 dB
F=F0 + 1MHz / / +5 dB
F=F0 - 1MHz / / +5 dB
F=F0 + 2MHz / / -25 dB
Adjacent channel selectivity C/I
F=F0 - 2MHz / / -13 dB
F=F0 + 3MHz / / -33 dB
F=F0 - 3MHz / / -33 dB
Adjacent channel selectivity C/I F=Fimage / / 0 dB

Notes:

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part without prior written permission of RDA. Page 9 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

Table 6-4 Transmit Characteristics ------ Enhanced Data Rate

(VBAT = 4.0 V, TA = 27°C, unless otherwise specified)

PARAMETER CONDITIONS MIN TYP MAX UNIT

General specifications
Maximum RF transmit power / +7 / dBm
Relative transmit control / -1.6 / dB
kHz
π/4 DQPSK max w0 / +7.4 / kHz
π/4 DQPSK max wi / +6.7 / kHz
π/4 DQPSK max |wi + w0| / +2.4 / kHz
8DPSK max w0 / +7.1 / kHz
8DPSK max wi / +4.4 / kHz
8DPSK max |wi + w0| / +2.7 / kHz
RMS DEVM / 8 / %
π/4 DQPSK Modulation Accuracy 99% DEVM / / 30 %
Peak DEVM / 16 / %
RMS DEVM / 8 / %
8DPSK Modulation Accuracy 99% DEVM / / 20 %
Peak DEVM / 16 / %
F=F0 + 1MHz / -14.7 / dBm
F=F0 - 1MHz / -15.2 / dBm
F=F0 + 2MHz / -51.0 / dBm
In-band spurious emissions F=F0 - 2MHz / -52.2 / dBm
F=F0 + 3MHz / -55.5 / dBm
F=F0 - 3MHz / -55.8 / dBm
F=F0 +/- > 3MHz / / -55 dBm
EDR Differential Phase Coding / 100 / %

Notes:

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part without prior written permission of RDA. Page 10 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

7 FM Section Functional Description

LOUT
I I L
PGA ADC DAC
Audio
LNAP DSP
+
Core
LNA
LNAN
- digital filter
MPX decoder
stereo/mono
ROUT
Limiter Q Q audio
R
PGA ADC DAC

32.768 KHz RDS GPIO

VCO GPIO
/RBDS
Synthesizer
RCLK
RSSI SCLK
MCU
2.7-5.5 V Interface
VDD SDIO
LDO Bus
VIO

Figure 7-1. RDA5876 FM Tuner Block Diagram

The PGA amplifies the mixer output IF signal and
FM Receiver then digitized with ADCs.
The DSP core finishes the channel selection, FM
The receiver uses a digital low-IF architecture that demodulation, stereo MPX decoder and output
avoids the difficulties associated with direct audio signal. The MPX decoder can autonomous
conversion while delivering lower solution cost switch from stereo to mono to limit the output
and reduces complexity, and integrates a low noise.
noise amplifier (LNA) supporting the FM
broadcast band (50 to 115MHz), a quadrature The DACs convert digital audio signal to analog
image-reject mixer, a programmable gain control and change the volume at same time. The DACs
(PGA), a high resolution analog-to-digital has low-pass feature and -3dB frequency is about
converters (ADCs), an audio DSP and a high- 30 KHz.
fidelity digital-to-analog converters (DACs).
Synthesizer
The LNA has differential input ports (LNAP and
LNAN) and supports any input port by set
according registers bits (LNA_port_sel[1:0]). It The frequency synthesizer generates the local
default input common mode voltage is GND. oscillator signal which divide to quadrature, then
be used to downconvert the RF input to a
The limiter prevents overloading and limits the constant low intermediate frequency (IF). The
amount of intermodulation products created by synthesizer reference clock is 32.768 KHz.
strong adjacent channels.
The synthesizer frequency is defined by bits
The quadrature mixer down converts the LNA CHAN[9:0] with the range from 50MHz to
output differential RF signal to low-IF, it also has 115MHz.
image-reject function.

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part without prior written permission of RDA. Page 11 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

Power Supply I2S Audio Data Interface

The RDA5876 FM section integrated LDO which The RDA5876 supports I2S (Inter_IC Sound Bus)
supplies power to the chip. The external supply audio interface. The interface is fully compliant
voltage range is 1.8-5.5 V. with I2S bus specification. When setting I2SEN bit
high, RDA5876 will output SCK, WS, SD signals
RESET and Control Interface select from GPIO_FM3, GPIO_FM1, GPIO_FM2 as I2S
master and transmitter, the sample rate is
48Kbps ， 44.1kbps,32kbps….. RDA5876 also
The RDA5876 FM section is RESET itself When support as I2S slaver mode and transmitter, the
VIO is Power up. And also support soft reset by sample rate is less than 100kbps.
trigger 02H BIT1 from 0 to 1. The control interface
is I2C.

Control Interface

The I2C interface is compliant to I2C Bus

Specification 2.1. It includes two pins: SCL and
SDA. A I2C interface transfer begins with START
condition, a command byte and data bytes, each
byte has a followed ACK (or NACK) bit, and ends
with STOP condition. The command byte includes
a 7-bit chip address (0010000b) and a R/W bit.
The ACK (or NACK) is always sent out by receiver.
When in write transfer, data bytes is written out
from MCU, and when in read transfer, data bytes
is read out from RDA5876. There is no visible
register address in I2C interface transfers. The
I2C interface has a fixed start register address
(0x02h for write transfer and 0x0Ah for read
transfer), and an internal incremental address
counter. If register address meets the end of
register file, 0x3Ah, register address will wrap
back to 0x00h. For write transfer, MCU programs
registers from register 0x02h high byte, then
register 0x02h low byte, then register 0x03h high
byte, till the last register. RDA5876 always gives
out ACK after every byte, and MCU gives out
STOP condition when register programming is
finished. For read transfer, after command byte
from MCU, RDA5876 sends out register 0x0Ah
high byte, then register 0x0Ah low byte, then
register 0x0Bh high byte, till receives NACK from
MCU. MCU gives out ACK for data bytes besides
last data byte. MCU gives out NACK for last data
byte, and then RDA5876 will return the bus to
MCU, and MCU will give out STOP condition.
Details please refer to RDA5876 Programming
Guide and RDA5802N Programming Guide and
Datasheet.

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part without prior written permission of RDA. Page 12 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

8 FM Section Electrical Characteristics

Table 8-1 DC Electrical Specification (Recommended Operation Conditions):
SYMBOL DESCRIPTION MIN TYP MAX UNIT
VBAT Supply Voltage 3.3 4.0 4.2 V
VIO Interface Supply Voltage 1.5 3.0 3.6 V
Tamb Ambient Temperature -20 27 +75 ℃
VIL CMOS Low Level Input Voltage 0 0.3*VIO V
VIH CMOS High Level Input Voltage 0.7*VIO VIO V
VTH CMOS Threshold Voltage 0.5*VIO V
Notes:
1. VIO=1.8~3.3V

Table 8-2 DC Electrical Specification (Absolute Maximum Ratings):

SYMBOL DESCRIPTION MIN TYP MAX UNIT
VIO Interface Supply Voltage -0.5 +3.6 V
Tamb Ambient Temperature -40 +90 °C
IIN Input Current (1) -10 +10 mA
VIN Input Voltage(1) -0.3 VIO+0.3 V
Vlna LNA FM Input Level +10 dBm
Notes:
1. For Pin: SCL, SDA

Table 8-3 Power Consumption Specification

(VBAT = 4.0 V, VIO=1.5 to 3.6V, TA = -25 to 85 ℃, unless otherwise specified)
SYMBOL DESCRIPTION Condition TYP UNIT
IA Analog Supply Current ENABLE=1 20 mA
IVIO Interface Supply Current SCL and SDA inactive 90 μA
IAPD Analog Powerdown Current ENABLE=0 5 μA
IVIO Interface Powerdown Current ENABLE=0 10 μA

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RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

9 FM Section Receiver Characteristics

Table 9-1 Receiver Characteristics (VBAT = 4.0 V, VIO= 3.0V, TA = 25 °C, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
General specifications
Fin FM Input Frequency Range Adjust BAND Register 50 115 MHz
50MHz - 1.4 1.8
65MHz - 1.2 1.5

1,2,3 88MHz - 1.2 1.5

Vrf Sensitivity S/N=26dB μV EMF
98MHz - 1.3 1.5
108MHz - 1.3 1.5
115MHz - 1.3 1.8
4
IP3in Input IP3 AGCD=1 80 - - dBμV
1,2
αam AM Suppression m=0.3 60 - - dB
S200 Adjacent Channel Selectivity ±200KHz 50 70 - dB
S400 400KHz Selectivity ±400KHz 60 85 - dB
1,2
Audio L/R Output Voltage
VAFL; VAFR Volume [3:0] =1111 - 360 - mV
(Pins LOUT and ROUT)
Maximum Signal to Noise Mono2 55 57 -
S/N 1,2,3,5 6
dB
Ratio Stereo 53 55 -
αSCS Stereo Channel Separation 35 - - dB
Audio Output Loading
RL Single-ended 32 - - Ω
Resistance
Audio Total Harmonic Volume[3:0] Rload=1KΩ - 0.15 0.2
THD 1,3,6 %
Distortion =1111 Rload=32Ω - 0.2 -
Audio Output L/R
αAOI - - 0.05 dB
Imbalance1,6
Rmute Mute Attenuation Ratio1 Volume[3:0]=0000 60 - - dB
9
1KHz=0dB Low Freq - 100 -
BWaudio Audio Response1 Hz
±3dB point High Freq - 14 -
Pins LNAN, LNAP, LOUT, ROUT and NC(22,23)
Pins LNAN/LNAP Input
Vcom_rfin 0 V
Common Mode Voltage
Audio Output Common Mode
Vcom 1.0 1.05 1.1 V
Voltage8
Pins NC ( 22,23 ) Common
Vcom_nc Floating V
Mode Voltage
Notes:1. Fin=65 to 115MHz; Fmod=1KHz; de-emphasis=75μs; MONO=1; L=R unless noted otherwise;
2. Δf=22.5KHz; 3. BAF = 300Hz to 15KHz, RBW <=10Hz; 4. |f2-f1|>1MHz, f0=2xf1-f2, AGC disable, Fin=76 to 108MHz;
5. PRF=60dBUV; 6. Δf=75KHz,fpilot=10% 7. Measured at VEMF = 1 m V, f RF = 65 to 108MHz
8. At LOUT and ROUT pins 9. Adjustable

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RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

10 Pins Description

WLAN_ACTIVE
HOST_WAKE
GPIO2/

FM_OUTL

FM_OUTR
UART_TX

VOUT12

NC

NC
32 31 30 29 28 27 26 25

UART_RX 1 24 NC

PCM_DOUT 2 23 FM_IP

PCM_DIN 3 GND PAD 22 FM_IN

PCM_CLK 4 21 AGPIO1/BT_PRIORITY
RDA5876
PCM_SYNC 5 20 AGPIO0/BT_ACTIVE

VIO 6 32 Pins 19 RF

VOUT18 7 18 NC

DCDC_SW 8 17 NC

9 10 11 12 13 14 15 16
XTAL
XIN_32K

LDO_ON
I2C_SDA

XEN_OUT
I2C_SCL
VBAT

XIN

Figure10-1. RDA5876 Top View

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part without prior written permission of RDA. Page 15 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

Table 10-1 RDA5876 Pins Description

PIN NO. DESCRIPTION

UART_RX 1 UART data input
PCM_DOUT 2 Synchronous data output
PCM_DIN 3 Synchronous data input
PCM_CLK 4 Synchronous data clock
PCM_SYNC 5 Synchronous data sync
VIO 6 IO power supply
VOUT18 7 Analog voltage output, connected with decouple capacitor
DCDC_SW 8 Internal DC/DC switch voltage output
VBAT 9 Bluetooth and FM power supply
XIN_32K 10 32.768K clock input or external 32.768K crystal
I2C_SDA 11 I2C interface Data signal
I2C_SCL 12 I2C interface Clock signal
XEN_OUT 13 Clock request output
XIN 14 For 26Mhz crystal input or external clock input
XTAL 15 For 26Mhz crystal input
LDO_ON 16 Internal LDO power on
NC 17 Should be not connected
NC 18 Should be not connected
RF 19 Bluetooth Radio signal
Programmable I/O
AGPIO0 20
Also used ad bt_active when using WIFI co-existence handshake interface.
Programmable I/O.
AGPIO1 21
Also used as bt_priority when using WIFI co-existence handshake interface.
FM_IN 22 LNA input port. For single-ended input, LNAN should be connected to RFGND
FM_IP 23 LNA input port. For single-ended input, LNAN should be connected to RFGND
NC 24 Connect to ground
NC 25 Should be not connected
NC 26 Connect to ground
FM_OUTR 27 Right audio output
FM_OUTL 28 Left audio output
VOUT12 29 Digital voltage output, connected with decouple capacitor
Programmable I/O.
GPIO2 30
Also used as wl_active when using WIFI co-existence handshake interface.
HOST_WAKE 31 Output to wakeup host
UART_TX 32 UART data output

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part without prior written permission of RDA. Page 16 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

11 Application Circuit

Figure 11.1 Application schematic

1) AGPIO0, AGPIO1, GPIO2 connect to GND.
2) L5 4.7uH only for DCDC mode, LDO mode NC .

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part without prior written permission of RDA. Page 17 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

12 Package Physical Dimension

Figure12-1illustratesthepackage details for the RDA5876. The package is lead-free and RoHS-compliant.

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part without prior written permission of RDA. Page 18 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

Figure12-1. 32-Pin 4x4 Quad Flat No-Lead (QFN)

13 PCB Land Pattern

[Link] Reflow Profile

Table 13-1 Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average Ramp-Up Rate 3 ℃/second max. 3 ℃/second max.
(TSmax to Tp)
Preheat
-Temperature Min (Tsmin) 100 ℃ 150 ℃
-Temperature Max (Tsmax) 100 ℃ 200 ℃
-Time (tsmin to tsmax) 60-120 seconds 60-180 seconds
Time maintained above:
-Temperature (TL) 183 ℃ 217℃
-Time (tL) 60-150seconds 60-150 seconds
Peak /Classification See Table 9-2 See Table 9-3
Temperature(Tp)
Time within 5 oC of actual Peak 10-30 seconds 20-40 seconds
Temperature (tp)
Ramp-Down Rate 6 ℃/second max. 6 ℃/seconds max.
Time 25 oC to Peak 6 minutes max. 8 minutes max.

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RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

Temperature

Table 13-2 Pb-free Process – Package Peak Reflow Temperatures

Package Thickness Volume mm3 Volume mm3
<350 ≥350
＜2.5mm 240 + 0/-5 ℃ 225 + 0/-5 ℃
≥2.5mm 225 + 0/-5 ℃ 225 + 0/-5 ℃

Table 13-3 Pb-free Process – Package Classification Reflow Temperatures

Package Volume mm3 Volume mm3 Volume mm3
Thickness ＜350 350-2000 ＞2000
＜1.6mm 260 + 0 ℃ * 260 + 0 ℃ * 260 + 0 ℃ *
1.6mm – 2.5mm 260 + 0 ℃ * 250 + 0 ℃ * 245 + 0 ℃ *
≥2.5mm 250 + 0 ℃ * 245 + 0 ℃ * 245 + 0 ℃ *
*Tolerance : The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature(this mean Peak reflow temperature + 0 ℃. For example 260+ 0 ℃ )
at the rated MSL Level.

Note 1: All temperature refer topside of the package. Measured on the package body surface.
Note 2: The profiling tolerance is + 0 ℃, - X ℃ (based on machine variation capability)whatever is
required to control the profile process but at no time will it exceed – 5 ℃. The producer assures process
compatibility at the peak reflow profile temperatures defined in Table 13-3.
Note 3: Package volume excludes external terminals(balls, bumps, lands, leads) and/or non integral heat
sinks.
Note 4: The maximum component temperature reached during reflow depends on package the thickness
and volume. The use of convection reflow processes reduces the thermal gradients between packages.
However, thermal gradients due to differences in thermal mass of SMD package may sill exist.
Note 5: Components intended for use in a “lead-free” assembly process shall be evaluated using the
“lead free” classification temperatures and profiles defined in Table13-1, 13-2, 13-3 whether or not lead
free.

RoHS Compliant
The product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) or polybrominated biphenyl ethers (PBDE), and are therefore considered RoHS compliant.

ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques
should be used when handling these devices.
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part without prior written permission of RDA. Page 20 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

14 Change List
REV DATE AUTHER CHANGE DESCRIPTION
V1.0 03/25/2011 Gibson Initial version.
V1.1 07/01/2011 Daihongjun Modify 24pin,25pin, 26pin PIN name

Modify the Application Circuit

V1.2 09/20/2011 Daihongjun Modify 27pin,28pin, PIN name

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part without prior written permission of RDA. Page 21 of 22
RDA Microelectronics, Inc. RDA5876 Datasheet V1.2

15 Contact Information
RDA Microelectronics, Inc.

Suite 302 Building 2, 690 Bibo Road Pudong District, Shanghai

Tel: 86-21-50271108
Fax: 86-21-50271099
Postal Code: 201203

Suite 1108 Block A, e-Wing Center, 113 Zhichun Road Haidian District, Beijing
Tel: 86-10-62635360
Fax: 86-10-82612663
Postal Code: 100086

2501 Room, District A, XiNian Center, 6021 ShenNan Road, Nanshan District, Shenzhen.
Tel: 86-755- 86187018
Fax: 86-755- 33395366
Postal Code: 518057

The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in
part without prior written permission of RDA. Page 22 of 22