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A42 NPN Transistor Datasheet

This document provides specifications for an NPN bipolar junction transistor in a TO-92 package. It lists maximum ratings such as voltage and power limits. It also provides typical electrical characteristics including current gain, breakdown voltages, and saturation voltages. The transistor has an emitter, base, and collector and is classified based on its DC current gain range.

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Bond James
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75 views3 pages

A42 NPN Transistor Datasheet

This document provides specifications for an NPN bipolar junction transistor in a TO-92 package. It lists maximum ratings such as voltage and power limits. It also provides typical electrical characteristics including current gain, breakdown voltages, and saturation voltages. The transistor has an emitter, base, and collector and is classified based on its DC current gain range.

Uploaded by

Bond James
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

A42 TRANSISTOR (NPN)

TO-92

FEATURES
1. EMITTER
High voltage
2. BASE
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units 3. COLLECTOR

VCBO Collector-Base Voltage 300 V


VCEO Collector-Emitter Voltage 300 V 1 2 3

VEBO Emitter-Base Voltage 5 V


IC Collector Current -Continuous 500 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW
RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 300 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 300 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA
hFE(1) VCE=10V, IC=1mA 60
DC current gain hFE(2) VCE=10V, IC=10mA 80 250
hFE(3) VCE=10V, IC=30mA 75
Collector-emitter saturation voltage VCE(sat) IC=20mA, IB=2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC=20mA, IB=2mA 0.9 V
Transition frequency fT VCE=20V, IC=10mA,f=30MHZ 50 MHz

CLASSIFICATION OF hFE(2)
Rank A B1 B2 C

Range 80-100 100-150 150-200 200-250


Typical Characteristics A42

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