FERROELECTRIC RAM
[FRAM]
Submitted by :
NIDHIN.O
ROLL NO : 44
CONTENTS
Introduction
Features
Basic Memory Cell Structure
Ferro Electric Crystal
FRAM Technology
FRAM Write Operation
Advantages
Disadvantages
Future Applications
Conclusion
References
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INTRODUCTION
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Ferroelectric RAM is a random-access memory
similar in construction to DRAM
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It uses a ferroelectric layer instead of a dielectric
layer to achieve non-volatility.
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FeRAM is one of a growing number of alternative
non-volatile random-access memory technologies that
offer the same functionality as flash memory.
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FEATURES
A ferroelectric memory cell consists of a
ferroelectric capacitor and a MOS transistor
The most well-known ferroelectric substance
is BaTiO3.
Data is read by applying an electric field to
the capacitor
The memory is non-volatile
FRAM allows systems to retain information
even when power is lost
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FERRO ELECTRIC CRYSTAL
Ferroelectric CrystaI: The center atom moves to store ones and zeros
Consist of 8 atom of lead at corners
6 atom of oxygen at face centers
1 atom of titanium at cube centers 5
FRAM TECHONOLOGY
• When an electric field is applied to a ferroelectric crystal, the central
atom moves in the direction of the field.
• As the atom moves within the crystal, it passes through an energy
barrier,causing a charge spike.
Internal circuits sense the charge spike and set the memory. If the
electric field is removed from the crystal, the central atom stays in
position, preserving the state of the memory.
This makes FRAM non-volatile, without any periodic refresh
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BASIC MEMORY
CELL STRUCTURE
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Word line
Bit line
Ferroelectric
capacitor
Gnd
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FRAM READ OPERATION
An electric field is applied.
If the atoms are near the cube "floors" and the
electric field pushes them to the top, the cell
gives off a current pulse.
This pulse, representing a stored 1 or 0, is
detected by a sense amplifier. If the atoms are
already near their cubes' "ceilings," they don't
budge when the field is applied and the cell
gives off a smaller pulse.
Reading an FRAM cell destroys the data
stored in its capacitor. So after the bit is read,
the sense amplifier writes the data back into
the cell, just as in a DRAM. 9
FRAM WRITE OPERATION
To write a "1" into the memory cell,
The BL is raised to Vdd-
Then the WL is raised to Vdd + Vt.
This allows a full Vdd to appear across the ferroelectric capacitor
At this time the state of ferroelectric is independent of its initial
[Link], the PL is pulsed, WL stays activated until the PL is
pulled down completely and the BL is driven back to zero.
The final state of the capacitor is a negative charge state S1.
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To write a "0" into the cell
the BL is driven to 0V prior to activating the
WL.
The rest of the operation is similar to that of
writing a "1“
The written data is held in the cell even though
the selection of the wordline is changed to non
selected state (i.e. transistor is OFF), so it is
nonvolatile.
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FRAM AS RAM & ROM
FRAM memory fills the RAM and ROM performance gap
The key advantage to FRAM over DRAM is what happens between the read and
write cycles. In DRAM, every cell must be periodically read and then re-written, a
process known as refresh..
In contrast, FRAM only requires power when actually reading or writing a cell. The
vast majority of power used in DRAM is used for refresh power usage about 99%
lower than DRAM. 12
RAMTRON-FRAM
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COMPARISON
FRAM EEPROM Flash Memory DRAM SRAM
Memory Type Non-volatile Non-volatile Non-volatile Volatile Volatile
Read Cycle 100ns 200ns 120ns 70ns 85 ns .
Write Cycle 100ns 10ns 100ns 70ns 85ns
Power Consumption 1nJ lnJ 2nJ 4nJ 3nJ.
Current to retain Unnecessary Unnecessary Unnecessary' Necessary Necessary
Data
Internal Write 2V-5V 14V 9V 3.3V 3.3V
Voltage
Cell Structure 1T-1C • 2T IT 1T-1C 6T,4T+R
Area/Cell 4 3 1 2 4 -
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ADVANTAGES
Speed and high capacity: FRAM memories can be written as fast as
they can be [Link] high-speed access and low power consumption allow
the design of high-capacity RFID chips suitable for data logging.
Almost unlimited read-write times: With read-write endurance of 1012
cycles, FRAM is more durable and suitable for applications that require
frequent rewriting.
Gamma radiation hardness: Unlike EEPROM, FRAM does not lose its
content due to radiation exposure.
It is less expensive than magnetic memories.
Non volatile
Low power consumption
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DISADVANTAGES
Present high cost
Low density compared to DRAM & SRAM
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FUTURE OF FRAM
Increased memory capacity
High density to operate under very high temperature
Combine FRAM with other logical technologies to offer more enhanced
devices
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APPLICATIONS
Personal digital assistants (PDAs)
Handheld phones
Power meters
Smart card, and in security systems
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TARGET APPLICATIONS
Logistic-tracking systems
Data-logging devices
Wireless tracking
Environmental monitoring control
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FRAM MEMORY PRODUCTS
DATA COLLECTION AND LOGGING
CONFIGURATION STORAGE
NON VOLATILE BUFFER
SRAM REPLACEMENT
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CONCLUSION
Ferroelectric memories are superior to EPROM’s & Flash
memories in terms of write access time & overall power
[Link] eg: of such applications are contactless
smart cards & digital cameras.
Future personal wireless connectivity applications that are
battery driven will demand large amounts of non volatile
storage to retain accessed internet webpages, contain
compressed video, voice and data.
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REFERENCE
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[Link]
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[Link]
semiconductor/fsp/memory/fram/overview/
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R. Womack, "A 16kb ferroelectric nonvolatile
memory with a bit parallel architecture"
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