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Area Capacitance in Microtechnology

The document discusses area capacitance and delay calculations for different technology nodes. It defines that a conducting layer is separated from the substrate using a dielectric layer. It provides the standard gate to channel capacitance and area capacitance values for 5 μm and 2 μm technologies. Relative capacitance and standard square gate capacitance (Cg) values are given for different technology nodes. Delay units are listed as 0.1 ns for 5 μm technology and 0.046 ns for 1.2 μm technology. The transition point of an inverter is defined as 0.5 Vdd and the safe delay value for 5 μm technology is 0.3 ns.

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sivanagendra
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104 views7 pages

Area Capacitance in Microtechnology

The document discusses area capacitance and delay calculations for different technology nodes. It defines that a conducting layer is separated from the substrate using a dielectric layer. It provides the standard gate to channel capacitance and area capacitance values for 5 μm and 2 μm technologies. Relative capacitance and standard square gate capacitance (Cg) values are given for different technology nodes. Delay units are listed as 0.1 ns for 5 μm technology and 0.046 ns for 1.2 μm technology. The transition point of an inverter is defined as 0.5 Vdd and the safe delay value for 5 μm technology is 0.3 ns.

Uploaded by

sivanagendra
Copyright
© All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd

Area Capacitance

1. Conducting layer is separated from substrate using

a) dielectric layer

b) silicon layer

c) metal layer

d) diffusion layer

View Answer

Answer: a

Explanation: Conducting layer is separated from the substrate by


using dielectric or insulating layer as both are electrical insulators
that can be polarized by an applied electric field.

2. Gate to channel capacitance of 5 micron technology is _____ pF X


10(-4) (micrometer)2.

a) 1

b) 2

c) 4

d) 0.4

View Answer
Answer: c

Explanation: Gate to channel capacitance of 5 micron technology is 4


pF X 10(-4) (micrometer)2. It is the standard typical calculated value.

3. Area capacitance of diffusion region of 2 micron technology is


_____ pF X 10(-4) (micrometer)2.

a) 2

b) 2.75

c) 3.75

d) 4.75

View Answer

Answer: c

Explanation: Area capacitane of diffusion region of 2 micron


technology is 3.75 pF X 10(-4) (micrometer)2.

4. Relative capacitance of diffusion region of 5 micron technology is

a) 1

b) 0.25

c) 1.25

d) 2

View Answer
Answer: b

Explanation: The relative capacitance of diffusion region of 5 micron


technology is 0.25. The relative value is calculated by comparing two
values of same type.

5. A feature size square has

a) L > W

b) W > L

c) L = W

d) L > d

View Answer

Answer: c

Explanation: A feature size square has L = W and its gate to channel


capacitance value is called as square Cg.

6. The standard square Cg value of a 5 micron technology is

a) 0.01 pF

b) 0.1 pF

c) 1 pF

d) 10 pF
View Answer

Answer: a

Explanation: The standard square Cg value of a 5 micron technology


is 0.01 pF. This standard square Cg value can be calculated by using
the area of standard square value and the capacitance value.

7. The standard square Cg value of a 1.2 micron technology is

a) 0.01 pF

b) 0.0023 pF

c) 0.023 pF

d) 0.23 pF

View Answer

Answer: b

Explanation: The standard square Cg value of a 1.2 micron


technology is 0.0023 pF.

8. Relative area for L = 20λ and W = 3λ is

a) 10

b) 15

c) 1/15
d) 1/10

View Answer

Answer: b

Explanation: Relative area for L = 20λ and W = 3λ is = (20λ X 3λ) / (2λ


X 2λ) = 15. Relative area has no unit as two quantities of same type
have been used.

9. The value of gate capacitance is

a) 0.25 square Cg

b) 1 square Cg

c) 1.25 square Cg

d) 1.5 square Cg

View Answer

Answer: b

Explanation: The value of gate capacitance is one square Cg. This is


the standard value.

10. Delay unit of 5 micron technology is

a) 1 nsec

b) 0.1 nsec
c) 0.01 nsec

d) 1 sec

View Answer

Answer: b

Explanation: Delay unit of 5 micron technology is 0.1 nsec

11. Delay unit of 1.2 micron technology is

a) 0.064 nsec

b) 0.0064 nsec

c) 0.046 nsec

d) 0.0046 nsec

View Answer

Answer: c

Explanation: The delay unit of 1.2 micron technology is 0.046 nsec.

12. What is the transition point of an inverter?

a) Vdd

b) 0.5 Vdd

c) 0.25 Vdd
d) 2 Vdd

View Answer

Answer: b

Explanation: The transition point of an inverter is 0.5 Vdd. Transition


point is the point where different phases of same substance can be
obtained in equilibrium.

13. What is the desired or safe delay value for 5 micron technology?

a) 0.3 nsec

b) 0.5 nsec

c) 0.1 nsec

d) 0.2 nsec

View Answer

Answer: a

Explanation: The desired or safe delay value for 5 micron technology


is 0.3 nsec.c

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