Transistor

2SC3311A
Silicon NPN epitaxial planer type

For low-frequency amplification

Unit: mm
Complementary to 2SA1309A
4.0±0.2

3.0±0.2
■ Features
● Optimum for high-density mounting.
● Allowing supply with the radial taping.

15.6±0.5
■ Absolute Maximum Ratings (Ta=25˚C)

+0.2
0.45–0.1
marking

0.7±0.1
Parameter Symbol Ratings Unit

2.0±0.2
Collector to base voltage VCBO 60 V 1 2 3

Collector to emitter voltage VCEO 50 V

Emitter to base voltage VEBO 7 V 1.27 1.27

Peak collector current ICP 200 mA 2.54±0.15

Collector current IC 100 mA

Collector power dissipation PC 300 mW 1:Emitter
2:Collector EIAJ:SC–72
Junction temperature Tj 150 ˚C 3:Base New S Type Package
Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
ICBO VCB = 10V, IE = 0 0.1 µA
Collector cutoff current
ICEO VCE = 10V, IB = 0 1 µA
Collector to base voltage VCBO IC = 10µA, IE = 0 60 V
Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V
Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V
Forward current transfer ratio hFE * VCE = 10V, IC = 2mA 160 460
Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 0.3 V
Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF

*h Rank classification
FE

Rank Q R S
hFE 160 ~ 260 210 ~ 340 290 ~ 460

1
Transistor 2SC3311A

PC — Ta IC — VCE IC — VBE
500 60 200
Ta=25˚C VCE=10V
Collector power dissipation PC (mW)

50
400 160

Collector current IC (mA)

Collector current IC (mA)

IB=160µA
40
300 140µA 120
120µA 25˚C
30
100µA
200 80
20 80µA Ta=75˚C –25˚C

60µA
100 40
10 40µA

20µA

0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — I E
100 600 300
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=10V VCE=10V

f=100MHz
Forward current transfer ratio hFE

30 Ta=25˚C

Transition frequency fT (MHz)

500 250

10

400 Ta=75˚C 200

3
25˚C

1 300 –25˚C 150

0.3
200 100
25˚C Ta=75˚C
0.1

–25˚C 100 50
0.03

0.01 0 0
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 – 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA)

Cob — VCB NV — IC
10 240
IE=0 VCE=10V
Collector output capacitance Cob (pF)

f=1MHz Function=FLAT
Ta=25˚C Ta=25˚C
200
8
Noise voltage NV (mV)

160
6

120
Rg=100kΩ
4
80
20kΩ
2
40 4.7kΩ

0 0
1 3 10 30 100 1 30 100 300 1000
Collector to base voltage VCB (V) Collector current IC (µA)