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Nanoxplore Anode Material Pricing Insights

Q: What are the benefits of integrating self-assembled monolayers (SAM) in the fabrication of MoS2 FETs?

Integrating self-assembled monolayers (SAM) in MoS2 field-effect transistors (FETs) offers substantial benefits, primarily enhancing interfacial quality and reducing gate leakage. SAM, due to its close-packed structure, can serve as an ultrathin gate dielectric that achieves low defect density at the MoS2/SAM interface, resulting in improved subthreshold slopes and minimal hysteresis in electrical characteristics. These enhancements are critical for achieving high performance and reliability in device operations .

Q: How does the fabrication of transition metal dichalcogenides (TMD) nanoscrolls contribute to advancements in material sciences?

The fabrication of transition metal dichalcogenides (TMD) nanoscrolls advances material sciences by enabling novel structural and functional properties. These nanoscrolls, resembling biological structures, provide numerous benefits such as enhanced mechanical flexibility, high surface area for catalytic reactions, and potential for accommodating various guest species. These properties present opportunities for innovative applications in electronics, catalysis, and energy storage, demonstrating the possibilities for engineering functionalities in two-dimensional materials .

Q: What are the advantages of using solution processing for the large-scale production of 2D materials?

Solution processing for the production of 2D materials is advantageous due to its cost-effectiveness, scalability, and versatility. By using liquid-phase exfoliation and wet-jet milling, it enables the efficient production of large quantities of high-quality 2D materials. This method is particularly suitable for integrating these materials into flexible and printed electronics, offering significant savings compared to more complex fabrication techniques while maintaining product quality .

Q: What makes graphene composites suitable for energy storage applications compared to traditional materials?

Graphene composites are exceptionally suitable for energy storage applications due to their high mechanical strength, flexibility, and tunable electronic properties. The unique structure of graphene provides a large surface area and high electrical conductivity, crucial for efficient charge transport and energy storage. Additionally, graphene composites often exhibit superior electrochemical performance and stability over traditional materials, as seen in the high specific capacitance and energy density recorded in various composite configurations .

Q: How does the graphene oxide composite improve the performance of Cu-BTC for gas storage?

The graphene oxide composite improves the performance of Cu-BTC by increasing its surface area and reactivity for gas interactions. The GO/Cu-BTC composite enhances CO2 capture capacity by approximately 30%, increasing from 6.39 mmol g−1 for Cu-BTC to 8.26 mmol g−1 for the composite at 273 K and 1 atm. Similarly, hydrogen storage improves from 2.81 wt% for Cu-BTC to 3.58 wt% for the composite at 77 K and 42 atm, indicating that interfacing GO with nanosized MOFs provides efficient pathways for gas adsorption .

Q: How do graphene-based composites in sodium-ion batteries improve their electrochemical performance and cycling stability?

Graphene-based composites in sodium-ion batteries improve electrochemical performance and cycling stability through their high surface area and electronic conductivity, which facilitate rapid ion diffusion and electron transfer. These composites enhance the active material utilization, achieve high-rate capabilities, and extend battery life by buffering volume changes during charge and discharge cycles. Additionally, graphene provides mechanical stability to the composite structure, maintaining electrode integrity under extended cycling .

Q: In what ways do interlayer interactions influence the properties of layered 2D materials?

Interlayer interactions significantly influence the electronic, optical, and mechanical properties of layered 2D materials. These interactions can alter band structures, modulate electrical conductivity, and impact carrier dynamics. For instance, weak interlayer coupling, as seen in materials like GeSe2, can lead to anisotropic properties and enhance device performance such as polarization sensitivity. Additionally, tunable interlayer interactions allow the exploration of new quantum states and facilitate the design of materials with tailored properties for specific applications .

Q: Why is the investigation of defect structures in 2D metal dichalcogenides critical for their catalytic and optical applications?

Investigating defect structures in 2D metal dichalcogenides is foundational for optimizing their catalytic and optical performance because defects often act as active sites for catalytic reactions, impacting reaction rates and efficiencies. They also influence the optical properties, such as emission and absorption characteristics, by creating localized states that can enhance light-matter interactions. Understanding these defects enables tailoring of materials for specific catalytic processes and the development of enhanced optoelectronic devices, such as sensors and photodetectors .

Q: How does doping graphene with nanoparticles enhance its sensitivity and selectivity towards hydrogen gas?

Doping graphene with nanoparticles, such as palladium, enhances its sensitivity and selectivity towards hydrogen gas by creating sites for hydrogen adsorption and dissociation, which are facilitated by the spill-over effect. Palladium nanoparticles provide specific catalytic surfaces that favour hydrogen gas conversion, significantly boosting the response time and signal strength in hydrogen sensors. This doping also synergistically increases the surface area and reactive sites of the composite, further improving its sensing capabilities .

Q: What role does the bandgap tunability of black phosphorus play in future electronic devices?

The bandgap tunability of black phosphorus is pivotal for future electronic devices as it allows for modulation of electronic and optical properties to suit specific applications. Its ability to maintain a widely adjustable bandgap through external conditions, such as strain or electrical field, enables black phosphorus to serve as a platform for new states of quantum matter, potentially leading to the development of topological insulators and enabling efficient LEDs and photodetectors .

This document is an abstract book for a conference on 2D materials. It contains the conference schedule including plenary speakers, keynote speakers, invited speakers, and oral and poster presentations. The schedule is indexed in alphabetical order by presenter's name and includes their affiliation, presentation title, and page number. Presentations will cover topics such as graphene and other 2D materials for applications in electronics, photonics, energy storage and conversion.

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Nanoxplore Anode Material Pricing Insights

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ABSTRACTS BOOK

GUANGXI INDUSTRY AND

INFORMATION COMMITTEE

[Link]/2018/
Index alphabetical order
Plenary Speakers
Keynote Speakers Sp e ak ers /Ora ls/ Po ste rs
Invited Speakers
Oral
Poster

Page
Ahn, Jong-Guk (Chonnam National University, South Korea)
Surface Enhanced Raman Spectroscopy at Nanogap between Au
Nanoparticles Separated by 2D hexagonal Boron Nitride Poster 139
Ai, Zizheng (State Key Lab of Crystal Materials, China)
BNNS@Ti3C2 Intercalation Electrocatalyst for Hydrogen Evolution
Reaction Poster 141
Ando, Atsushi (National Institute of Advanced Industrial Science and
Technology (AIST), Japan)
Morphology and electrical studies on NaCl-assisted CVD synthesis of WS2 Poster 142
Invited
Bao, Qiaoliang (Monash University, Australia)
(Plenary
Photonic and Optoelectronic Device Applications Based on 2D Materials
Session) 18
Bao, Lihong (Institute of Physics, Chinese Academy of Sciences, China)
Black Phosphorus and Its Anologue: Electrical Transport Properties and
Devices Oral 64
Bao, Deliang (Institute of Physics, China)
Fabrication of Millimeter-Scale, Single-Crystal One-Third-Hydrogenated
Graphene with Anisotropic Electronic Properties Oral 62
Belle, Branson (SINTEF, Norway)
Gamma ray radiation effects on hBN encapsulated Graphene Field Effect
Transistors Poster 144
Bittencourt, Carla (University of Mons, Belgium)
Molybdenum Disulfide as Surface Enhanced Raman Scattering Substrates
for Sensing Polycyclic Aromatic Hydrocarbons Oral 65
Blaskovic, Milan (National University of Singapore, Singapore)
Tunable interaction between graphene and a DNA molecule Poster 146
Invited
Bonaccorso, Francesco (IIT-Graphene Labs / BeDimensional, Italy)
(Plenary
Large scale production of 2D-materials for energy applications
Session) 20
Cai, Yichao (Nankai University, China)
Graphene and Carbon Nanotube in Na-CO2 Battery Poster 148
Chang, Yung-Huang (National Yunlin University of Science and
Technology, Taiwan, China)
Tunable Band Gap Energy from WSxSey Monolayer Poster 150
Chen, Jun (Nankai University, China)
Inorganic/organic and carbon composites for Li/Na Batteries Keynote 4
Chen, Hui (Institute of Physics, CAS, China)
Recovering edge states of graphene nanoislands on Ir(111) by silicon
intercalations Oral 67
Page
Chen, Zhaolong (Peking University, China)
High Brightness Blue/UV Light-Emitting Diodes Enabled by Directly Grown
Graphene Buffer Layer Oral 68
Chen, Zongping (Zhejiang University, China)
Precision synthesis of structurally deﬁned graphene nanoribbons by
chemical vapor deposition Oral 69
Chen, Chang-Hsiao (Feng Chia University, Taiwan, China)
Chemical Vapor Deposition Synthesis of Large-Area Monolayer InSe Poster 151
Cheng, Hui-Ming (Chinese Academy of Sciences, China)
Fabrication of Graphene and Other 2D Materials by Exfoliation Keynote 5
Cho, Ah-Jin (Yonsei University, South Korea)
Evaluation of a WSe2/MoS2 Heterojunction in the Perspective of a
Transparent Thin-film Solar Cell Poster 152
Chu, Hailiang (Guilin University of Electronic Technology, China)
Effect of Reduced Graphene Oxide on the Electrochemical Properties of
Overlithiated Oxide Cathode Materials for Li-Ion Batteries Poster 154
Chua, Daniel (NUS, Singapore) Invited
New varieties of Metal Sulphides / Phosphides for Electronics and Clean (Industrial
Energy applications Forum) 54
Ci, Haina (Peking University, China)
Vertically-oriented Graphene Growth at Low Temperature for
Solarthermal Applications Poster 155
Cui, Xueping (Institute of Chemistry Chinese Academy of Sciences, China)
Fabrication of Transition Metal Dichalcogenides Nanoscrolls Poster 158
Cui, Ling zhi (Peking University, China)
Highly Conductive Nitrogen-doped Graphene Grown on Glass Towards
Electrochromic Applications Poster 156
Dai, Xi (Nankai University, China)
Freestanding graphene/VO2 composite films for highly stable aqueous Zn-
ion batteries with superior rate performance Poster 159
Deng, Jianqiu (Guilin University of Electronic Technology, China)
High-performance V-based electrode materials for sodium-ion batteries Poster 161
Deng, Bing (Peking University, China)
Graphene as Electronic Materials: Controlled Growth of Single-Crystal
Graphene Wafer Poster 160
Duan, Xiangfeng (University of California, USA)
Van der Waals Integration beyond 2D Materials Keynote 6
Invited
Eda, Goki (NUS, Singapore)
(Plenary
Photonics of 2D semiconductors
Session) 21
Eginligil, Mustafa (Nanjing Tech University, China)
Circular Photogalvanic Photocurrents in 2D Materials Oral 70
Etemadi, Samaneh (Abalonyx AS, Norway)
Graphene Oxide acidity modifications Oral 71
Gao, Hongjun (Chinese Academy of Sciences, China)
Construction of Novel 2D Atomic/molecular Crystals and Its physical
Property Keynote 7
Page
Gao, Jie (Guilin University of Electronic Technology, China)
Enhanced Thermoelectric Performance in Graphene Quantum Dots/Te
Nanowires composite film Poster 163
Invited
Garaj, Slaven (NUS, Singapore)
(Parallel
Nanofluidics with graphene and graphene-oxide membranes
Workshop) 33
Geng, Fengxia (Soochow University, China)
Novel Inorganic Layered Materials: From Interlayer Chemistry,
Delamination, toward Energy Storage Applications Oral 72
Ghimire, Mohan (Sungkyunkwan University, South Korea)
Graphene-CdSe quantum dot hybrid as a platform for the control of carrier
temperature Oral 74
Guo, Wanlin (Nanjing University of Aeronautics & Astronautics, China)
Emerging Hydrovoltaic Technology Keynote 8
Hou, Yunpeng (Nankai University, China)
High-performance layered Ni-rich LiNi1-x-yCoxAlyO2 cathode materials for
lithium ion batteries Poster 164
Hsu, Hao-Lin (Green Energy Technology Research Center/Kun Shan
University, Taiwan, China)
Application of Carbon Aerogel in the Adsorption of Polycyclic Aromatic
Compounds from Diesel Exhaust Oral 75
Invited
Hu, Jinsong (Institute of Chemistry, Chinese Academy of Science, China)
(Parallel
2D Germanium Selenide for Photovoltaics and Optoelectronics
Workshop) 35
Hu, Zhirun (University of Manchester, UK)
Printed Graphene For Chipless RFID Applications Oral 76
Huo, Shanshan (Graphene Enabled Systems Ltd, UK)
A New Model for Accelerating the Commercialisation of Graphene and
other 2D Materials Research from Universities Oral 78
Ikeda, Keiichiro (Osaka Prefecture University, Japan)
Chemical Modification of Graphene Controlled by Substrate Surface
Treatment with Self-Assembled Monolayers Poster 166
Invited
Iwasa, Yoshihiro (The University of Tokyo, Japan)
(Plenary
Symmetry Controlled Optical Properties in TMD Nanostructures
Session) 22
Jang, Chan Wook (Kyung Hee University, South Korea)
Flexible perovskite resistive random access memories employing graphene
transparent conductive electrodes Poster 168
Jia, Kaicheng (Peking University, China)
Copper Containing Carbon Feedstock for Growing High Quality Graphene Poster 169
Jiao, Chengli (Qingdao Institute of BioEnergy and Bioprocess Technology
Chinese Academy of Sciences, China)
Induced Assembly of Two-Dimensional Metal–Organic Framework
Nanosheets for Gas Separation Oral 80
Joe, Minwoong (SKKU, South Korea)
Dominant in-plane cleavage direction of CrPS4 monolayer Poster 170
Page
Kawanago, Takamasa (Tokyo Institute of Technology, Japan) Invited
Two-Dimensional Inorganic/Organic Hetero Interface for Field-Effect (Parallel
Transistor Applications Workshop) 36
Invited
Kim, Keun Su (Yonsei University, South Korea)
(Parallel
Bandgap engineering of two-dimensional semiconductors
Workshop) 38
Kim, Jong Min (Kyung Hee University, South Korea)
Use of Doped-Graphene Transparent Conductive Electrodes for High-
Performance Si-Quantum-Dots-Based Solar Cells Oral 81
Kim, Gil-Ho (Sungkyunkwan University, South Korea)
Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual
Channel Transport in MoS2/WSe2 van der Waals Heterostructure Poster 171
Kim, Ju Hwan (Kyung Hee University, South Korea)
Multilayer graphene/conducting polymer/Si nanowires/Si/TiOx hybrid
solar cells Poster 173
Invited
Koshino, Mikito (Osaka University, Japan)
(Plenary
Effective theory for the flat band in the twisted bilayer graphene
Session) 23
Kuester, Scheyla (École de technologie supérieure/NanoXplore Inc.,
Canada)
Electrical properties and electromagnetic shielding effectiveness of
polycarbonate/acrylonitrile butadiene styrene/graphene nanoplatelets
nanocomposites Oral 82
Lanza, Mario (Soochow University, China) Invited
Building the hardware of future artificial intelligence systems: two- (Plenary
dimensional materials based electronic synapses Session) 24
Li, Lance (Taiwan Semiconductor Manufacturing Company, Taiwan)
Continue the transistor scaling with 2D materials: Challenges and
Perspective Keynote 10
Li, Geng (Institute of Physics, CAS, China)
Construction of graphene/silicene heterostructure by Si intercalation Oral 84
Li, Jinshu (Sungkyunkwan University, South Korea)
Quasiparticle interference (QPI) in twisted bilayer graphene Oral 85
Li, Wenjiang (School of Materials Science and Engineering, China)
Nanoscale NEXAFS for Probing multi-layer graphene/copper nanowires
composite Poster 174
Invited
Lin, Yen-Fu (National Chung Hsing University, Taiwan)
(Parallel
Performance potential and limit in van der Waals MoTe2 Transistors
Workshop) 39
Linchao, Zeng (Tsinghua-Berkeley Shenzhen Institute, China)
Integrated paper-based stretchable LIBs Poster 176
Invited
Liu, Hongyang (Institute of Metal Research, China)
(Parallel
Nano-Graphene Based Catalyst for Efficient Light Alkane Activation
Workshop) 40
Liu, Chang-Hua (National Tsing Hua University, Taiwan) Invited
Developing ultrathin light emitters and metalenses based on van der (Industrial
Waals materials Forum) 55
Page
Liu, Zhongfan (Peking University, China)
CVD Graphene: Scalable Growth and Beyond Keynote 11
Liu, Zhibo (Institute of Metal Research, Chinese Academy of Sciences,
China)
The boundaries of 2D Mo2C superconducting crystals Oral 86
Liu, Yang (Guangxi University, China)
Asymmetric 3d Electronic Structure for Enhanced Oxygen Evolution
Catalysis Poster 185
Liu, Fangming (Nankai University, China)
Anions inserted into graphite interlayers enhancing the electrodeposited
metal hydroxides for oxygen evolution Poster 179
Liu, Jiaman (Tsinghua-Berkeley Shenzhen Institute, China)
Synthesis of wafer-scale single-layer h-BN and its use in proton transport
membrane Poster 181
Liu, Mingqiang (Tsinghua-Berkeley Shenzhen Institute, China)
Controlled growth and doping of black phosphorus with tunable properties Poster 183
Liu, Bingzhi (Peking University, China)
Oxygen-assisted Growth of Highly Conductive Graphene with Controllable
Domain Size on Glass Poster 178
Lu, Huibing (Guilin University of Technology, China)
Controllable synthesis of 2D Cr-doped MoO2.5(OH)0.5 nanosheets and
application in Lithium Ion Batteries Oral 87
Luo, Hao (Tsinghua University, China)
Probing and Modulating Interface Interactions in 2-Dimensional Materials
and Their Heterostructures Oral 89
Ma, Ruisong (Institute of Physics Chinese Academy of Sciences, China)
Direct Four-Probe Measurement of Grain-Boundary Resistivity and
Mobility in Millimeter-Sized Graphene Oral 90
Invited
Miao, Feng (Nanjing University, China)
(Plenary
Electronic Transport and Device Applications of 2D Materials
Session) 26
Miao, Lei (Guilin University, China) Invited
Enhanced Thermoelectric Performance in Graphene Quantum Dots/Te (Parallel
Nanowires Flexible Hybrid Film Workshop) 41
Invited
Moon, Pilkyung (NYU Shanghai, China)
(Parallel
Theory of Dirac Electrons in a Dodecagonal Graphene Quasicrystal
Workshop) 42
Moon, Inyong (Sungkyunkwan University, South Korea)
Measurements of Fermi Level and Doping Concentration of 2D Transition
Metal Dichalcogenide Using Kelvin Probe Force Microscopy Oral 91
Invited
Mugarza, Aitor (ICN2, Spain)
(Parallel
Engineering nanoporous graphene with atomic precision
Workshop) 44
Munindra, (Delhi Technological University, India)
Quantum Capacitance Effect in Graphene-Metal-Oxide-Semiconductor
Field Effect Transistor with Large Area Graphene Channel Oral 92
Page
Novoselov, Kostya (University of Manchester, UK)
Materials in the Flatland Plenary 2
Oba, Tomoaki (Tokyo Institute of Technology, Japan)
Gated Four-Probe Method for Evaluation of Electrical Characteristics in
MoS2 Field-Effect Transistors Poster 187
Okamoto, Takuya (Tokyo Institute of Technology, Japan)
Three-Dimensional Spatial-Topology Effects, Magnetoresistance in Three-
Dimensional Porous Graphene Poster 189
Park, Hamin (KAIST, South Korea)
Interlayer interaction in a van der Waals heterostructure of transition
metal dichalcogenide and hexagonal boron nitride Oral 93
Park, YoungHee (Chonnam National University, South Korea)
Electrochemical Surface Modification of Two-Dimensional Hexagonal
Boron Nitride for Generating Midgap Energy States Poster 191
Peng, Hailin (Peking University, China)
High-Mobility 2D Crystals: Controlled Synthesis and Functional Devices Keynote 12
Pu, Jiang (Nagoya University, Japan)
Room Temperature Valley Polarized Light-Emitting Diodes of Monolayer
Transition Metal Dichalcogenides Oral 94
Qin, Jieqiong (Dalian Institute of Chemical Physics, Chinese Academy of
Sciences, China)
Two-Dimensional Pseudocapacitive Nanosheets for All-Solid-State Micro-
Supercapacitors Poster 193
Invited
Qiu, Jason Jieshan (Beijing University of Chemical Technology, China)
(Industrial
Synthesis and Applications of Carbon Dots
Forum) 56
Reckmeier, Claas Julian (neaspec, Germany)
Cryogenic near-field imaging and spectroscopy at the 10-nanometer-scale Oral 96
Ren, Wencai (Chinese Academy of Sciences, China)
Graphene Oxide: Green Synthesis and Membrane Applications Keynote 13
Romano, Valentino (University of Messina, Italy)
An industrial scalable approach for graphene/carbon nanotubes hybrid
flexible supercapacitors Oral 97
Sagar, Rizwan Ur Rehman (Tsinghua University, China)
Magneto-transport Properties of Graphene Foam Oral 99
Sasagawa, Akira (Tokyo Institute of Technology, Japan)
Direct observation of Plasmons in Graphene Quantum Dots with Scanning
Near-Field Optical Microscopy Poster 195
Sato, Shintaro (Fujitsu Laboratories Ltd., Japan) Invited
Application of Graphene and Graphene Nanoribbons to Electronic Devices (Industrial
Including Ultrasensitive Gas Sensors Forum) 57
Shamsul, Zakuan Azizi (NanoMalaysia Berhad, Malaysia) Invited
Malaysia´s Graphene Commercialization Progress - National Graphene (Industrial
Action Plan 2020 Forum) 59
Shan, Suyan (Wenzhou Medical University, China)
The fibroblast growth factor modified nitrogen-containing graphene for
regeneration of photo-damaged retinal pigment epithelial cells Oral 101
Page
Shan, Jingyuan (Peking University, China)
Graphene-Armored Aluminum Foil as Current Collectors for High-voltage
Lithium-Ion Battery with Enhanced performance Poster 197
Shi, Xiaoyu (Dalian Institute of Chemical Physics, Chinese Academy of
Sciences, China)
Graphene based linear tandem micro-supercapacitors Poster 198
Shin, Gwang Hyuk (KAIST, South Korea)
Si-MoS2 Vertical Heterostructure for High Responsivity Photodetector Oral 103
Shin, Seunghyun (Chonnam National University, South Korea)
Direct Covalent Functionalization of Single Layer 2H-MoS2 Electrografting
of Diazonium Salt: Influence of S vacancy and S-C bond on
Photoluminescence of 2H-MoS2 Poster 199
Shin, Seung-Hyun (Kyung Hee University, South Korea)
MAPbI3 Perovskite Solar Cells Employing Flexible n-Type Graphene
Transparent Conducting Electrodes Poster 200
Shuan, Li (Peking University, China)
Annealing temperature effect on microstructure, optical and electrical
properties of nanometer GdYOx high k films Poster 202
Invited
Son, Young-Woo (Korea Institute for Advanced Study, South Korea)
(Plenary
Effects of interlayer interactions on physics of layered crystals
Session) 27
Su, Ching-Yuan (National Central University, Taiwan) Invited
Rational Design of Nanostructured and Functionalized Graphene and Their (Parallel
Applications for Electronics and Energy Devices Workshop) 45
Su, Shubin (Shanghai Jiao Tong University, China)
Water-based Graphene Patterning under Ultraviolet Irradiation Poster 204
Sun, Li-Xian (Guilin Univ. of Electronic Technology, China) Invited
Interfacing graphene with nanoparticles for energy and gas storage as (Plenary
well as sensors Session) 28
Sun, Jinhua (Chalmers University of Technology, Sweden)
Molecular pillar approach to construct functionalized graphene for energy
storage Oral 104
Sun, Xiao (Peking University, China)
Rapid Growth of Large Single-Crystalline Graphene with Ethane Oral 106
Sun, Chia-Liang (Chang Gung University, Taiwan, China)
Photoassisted Electrochemical Biosensing Using Graphene Oxide
Nanorribons Poster 206
Sun, Yan (School of Materials Science and Engineering, China)
In-suit Assembled MoS2/Reduced Graphene Oxide Aerogels as an Efficient
Catalyst Application for HER Electrocatalysis Poster 208
Sun, Luzhao (Peking University, China)
Visualizing the Fast Growth of Large Single-Crystalline Graphene Poster 207
Takenobu, Taishi (Nagoya University, Japan) Invited
Electrochemically Doped Light-Emitting Devices of Transition Metal (Parallel
Dichalcogenide Monolayers Workshop) 46
Tan, Zelin (National University of Defense Technology, China)
Photoluminescence properties of WS2 under optical irradiation Poster 209
Page
Invited
Tao, Li (Southeast University, China)
(Parallel
Emerging 2D Xenes for Innovative Nanoelectronics
Workshop) 48
Tao, Haihua (Shanghai Jiao Tong University, China)
Patterning Graphene Film by Magnetic-assisted UV Photochemical
Oxidation Oral 107
Tao, Lei (Institute of Physics, Chinese Academy of Sciences, China)
Band engineering of double-wall Mo-based hybrid nanotubes Oral 109
Terrones, Mauricio (The Pennsylvania State University, USA)
A review of Defects in 2D Metal Dichalcogenides: Doping, Alloys,
Interfaces, Vacancies and Their Effects in Catalysis & Optical Emission Keynote 14
Tian, He (Tsinghua University, China)
Novel 2D devices based on graphene, BP and perovskite Oral 110
Wang, Hai (Guilin University of Technology, China)
Consideration on the structure of Mo-based anode materials for improving
lithium storage performance Oral 113
Wang, Lin (Shanghai Institute of Technical Physics, China)
Toward Sensitive Terahertz Detection Based on Two-dimensional
Materials Oral 115
Wang, Junying (Institute of Coal Chemistry, Chinese Academy of Sciences,
China)
Co-synthesis of atomic Fe and few-layer graphene towards superior
electrocatalysts of O2 and CO2 Oral 114
Wang, Zhao (Guangxi University, China)
Low-temperature superlubricity of suspended graphene Oral 117
Wang, Hai (Max Planck Institute for Polymer Research, Germany)
Tailoring Graphene: from optical control of carrier density to bandgap
engineering in graphene nanoribbons Oral 111
Wang, Chao (Dalian Institute of Chemical Physics, China)
In-situ investigations of the rechargeable aluminum ion battery by XPS,
Raman and optical microscope Poster 210
Wang, Sen (Dalian Institute of Chemical Physics, Chinese Academy of
Sciences, China)
Scalable Fabrication of Monolithic Micro-Supercapacitors with Tailored
Geometries for On-Chip Energy Storage Poster 212
Wang, Yijing (Nankai University, China)
Rational design of 1D mesoporous MnO@C nanorods as anode material
for improved Li-storage properties Poster 213
Wei, Qinwei (Institute of Metal Research, Chinese Academy of Sciences,
China)
Green Controlled Synthesis of Graphene Oxide by Water Electrolytic
Oxidation Oral 118
Wei, Jindi (Peking University, China)
Fabrication of a graphene edge based field emitter and its electron
emission properties Poster 215
Invited
Wendelbo, Rune (Abalonyx, Norway)
(Industrial
Graphene Oxide Derivatives, Properties and Applications
Forum) 60
Page
Wu, ZhengMing (SwissLitho AG, Switzerland)
Fabrication of sub-20 nm Metal Electrodes on 2D Materials without a
Charged Particle Beam Oral 120
Xia, Zhenyuan (Chalmers University of Technology, Sweden)
Three-Dimensional Multilayer Graphene-Fe2O3 Foam Composites and
Their Application in Energy Storage Oral 122
Xia, Yongpeng (Guilin University of Electronic Technology, China)
Significant improved dehydrogenation of LiAlH4 doped with two-
dimensional Ti3C2 Poster 216
Xin, Xing (Institute of Metal Research, Chinese Academy of Sciences,
China)
Circular Graphene Platelets with Grain Size and Orientation Gradients
Grown by Chemical Vapor Deposition Oral 124
Xu, Jian-Bin (The Chinese University of Hong Kong, China) Invited
Optoelectronic Devices Based on Graphene-Like Materials and their (Plenary
Related Heterostructures Session) 30
Xu, Chuan (Institute of Metal Research, Chinese Academy of Sciences,
China)
CVD-Grown High-Quality Ultrathin Mo2C Crystals and Their Vertical
Heterostructures with Graphene Oral 126
Xu, Chaochao (Guilin University of Electronic Technology, China)
Synthesis of bio-based porous carbon and its application in
supercapacitors Poster 217
Yang, Aikai (Nankai University, China)
Organic Molecules Grafted onto Graphene Enable Superior Lithium-Ion
Batteries Poster 218
Yang, Yusi (Peking University, China)
Weak Interlayer Interaction in Anisotropic GeSe2 Poster 219
Yao, Minjie (Nankai University, China)
Large-Area Reduced Graphene Oxide Composite Films for Flexible
Asymmetric Sandwich and Microsized Supercapacitors Poster 220
Yin, Zhengxuan (Nankai University, China)
High Na/K-storage performance of bismuth enabled by ether-based
electrolytes Poster 223
Yin, Shilu (Guilin University of Electronic Technology, China)
Synthesis and electrochemical properties of phosphorus doped GO/porous
carbon Poster 221
Yu, Xuebin (Fudan University, China) Invited
Graphene-Supported Complex Hydrides as Advanced Hydrogen Storage (Plenary
Materials Session) 31
Yue, Dewu (SKKU Advanced Institute of Nano Technology (SAINT), South
Korea)
High Performance Two-dimensional Semiconductors established by using
a Benzyl Viologen Interlayer Oral 127
Zahid, Muhammad (Istituto Italiano di Tecnologia, Italy)
Effect of 2D Nanomaterials on Gas Permeability and Mechanical
Properties of Thermoplastic Polyurethane Nanocomposites Oral 128
Page
Zhang, Yihe (China University of Geosciences, China) Invited
Graphene Composites as Energy, Catalyst, Environmental and Biomedical (Parallel
Materials, and Full Utilization of Graphite-Mining Workshop) 49
Zhang, Hua (NTU, Singapore)
Synthesis and Applications of Novel Two-Dimensional Nanomaterials Keynote 16
Zhang, Zheng (University of Science and Technology Beijing, China)
Defects engineering for monolayer MoS2 homojunction construction Oral 134
Zhang, Shaolin (Guangzhou University, China)
Preparation and mechanism of molybdenum diselenide nanosheets for
ethanol detection Oral 132
Zhang, Jian (Guilin University of Electronic Technology, China)
Graphene quantum dots as interface materials for organic photovoltaic
cells Oral 130
Zhang, Qiu (Nankai University, China)
Two-dimension Sulfide Anodes for Sodium-ion Batteries Poster 227
Zhang, Huanzhi (Guilin University of Electronic Technology, China)
Graphene-enhanced Composite Phase Change Materials for Thermal
Energy Storage Poster 224
Zhang, Jincan (Peking University, China)
Super-clean graphene film: synthesis, transfer and applications Poster 226
Zhang, Shuqing (Tsinghua-Berkeley Shenzhen Institute, China)
High temperature half-metallicity in 2D CoGa2X4 (X=S, Se, Te) Poster 228
Invited
Zhao, Jijun (Dalian University of Technology, China)
(Parallel
Computational design of novel 2D electronic and magnetic materials
Workshop) 50
Zheng, Jian (Institute of Chemistry Chinese Academy of Sciences, China)
Single Layer TMD Fabrication and Rolling up into Nanoscrolls Oral 135
Zhi, Wang (Institute of metal research,Chinese academy and sciences,
China)
Electric-field control of magnetism in a few-layered van der Waals
ferromagnetic semeconductor Oral 136
Zhou, Shuang (School of Materials Science and Engineering, China)
Reduced graphene oxide/carbon hybrid aerogels from cellulose and
graphene oxide for oil/water separation Poster 229
Zhu, Min (South China University of Technology, China) Invited
Highly reversible conversion reactions in lithiated SnO2 based thin film (Parallel
anode materials Workshop) 51
Zou, Yongjin (Guilin University of Electronic Technology, China)
Functionalized porous carbon for high performance supercapacitors Poster 230
1
K. S. Novoselov
School of Physics and Astronomy, University of Manchester, M13 9PL, UK

Materials in the Flatland

One of the most important “property” of graphene is that it has opened a floodgate of experiments on many
other 2D atomic crystals: BN, NbSe2, TaS2, MoS2, etc. The resulting pool of 2D crystals is huge, and they
cover a massive range of properties: from the most insulating to the most conductive, from the strongest to the
softest.
If 2D materials provide a large range of different properties, sandwich structures made up of 2, 3, 4 … different
layers of such materials can offer even greater scope. Since these 2D-based heterostructures can be tailored
with atomic precision and individual layers of very different character can be combined together, - the properties
of these structures can be tuned to study novel physical phenomena or to fit an enormous range of possible
applications, with the functionality of heterostructure stacks is “embedded” in their design.
Already now such materials bring to life a number of exciting applications. In my lecture I will review some of
them.

2
3
Jun Chen
Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education),
College of Chemistry, Nankai University, Tianjin 300071, China

chenabc@[Link]

Inorganic/organic and carbon composites for Li/Na Batteries

Electrode active materials have played a vital role in the working of rechargeable batteries because they are
sources of electric energy with controlled electrode reactions. Either inorganic or organic electrode materials
(particularly the positive electrode materials) show electrically insulating nature, which should be composited
with carbon for enhancing the charge transport within the electroactive bulk. This report focuses on controlled
synthesis of selected inorganic oxides and organic carbonyl salts with carbon composites via reduction-
oxidation-transformation crystallization. Meanwhile, the as-synthesized inorganic/organic and carbon
composites have demonstrated enhanced electrochemical performance in the application of rechargeable Li/Na
(ion/metal) batteries (300～500 Wh/kg, safety and long cycling stability). It is demonstrated that electrode
compositions of active inorganic/organic materials – conductive carbon (with various forms such as carbon
black, carbon nanotubes and graphene) are necessary for the large-scale application of rechargeable batteries
in the areas of electric vehicles and smart grids.
Keywords: Carbon composites, Inorganic oxides, Organic carbonyl salts, Rechargeable Li/Na batteries

4
Hui-Ming Cheng1,2
1Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
2Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of
Sciences, Shenyang 110016, China

hmcheng@[Link]; cheng@[Link]

Fabrication of Graphene and Other 2D Materials by Exfoliation

Graphene and other 2D materials have unique properties and is expected for various applications. Mass
production of 2D materials is a prerequisite for their commercial use, but there are great challenges. Exfoliation
of natural graphite and other layer materials are the most efficient method for fabricating 2D materials in powder
or suspension form on large scale. However, currently, only graphene and graphene oxide can be produced on
a ton scale, while it is difficult to mass produce other 2D materials.
We developed intercalation-expansion-liquid phase exfoliation and electrochemical exfoliation processes to
produce graphene materials with high quality in large quantity from natural graphite, which may have wide
applications in composites, energy storage, conductive inks, etc. Very recently, we have developed a grinding
exfoliation technology that uses micro-particles as intermediaries to distribute an applied compressive force into
a multitude of smaller shear friction forces that induce exfoliation of layered materials. This method can be used
for mass production of many 2D materials, such as h-BN, black phosphorus, and MoS2, with very high yield and
high efficiency, indicating its universality in preparing 2D materials with a wide range of properties. These 2D
materials can be used to fabricate polymer matrix composites and in many other applications.

5
Xiangfeng Duan
University of California, Los Angeles, CA 90095, USA

xduan@[Link]

Van der Waals Integration beyond 2D Materials

Semiconductor heterostructures are central for all modern electronic and optoelectronic devices. Traditional
semiconductor heterostructures are typically created through a “chemical integration” approach with covalent
bonds, and generally limited to the materials with highly similar lattice symmetry and lattice constants (and thus
similar electronic structures) due to lattice/processing compatibility requirement. Materials with substantially
different structure or lattice parameters can hardly be epitaxially grown together without generating too much
defects that could seriously alter their electronic properties. In contrast, van der Waals integration, where pre-
formed materials are “physically assembled” together through van der Waals interactions, offers an alternative
“low-energy” material integration approach (vs. the more aggressive “chemical integration” strategy). The
flexible “physical assembly” approach is not limited to materials that have similar lattice structures or require
similar synthetic conditions. It can thus open up vast possibilities for damage-free integration of highly distinct
materials beyond the traditional limits posed by lattice matching or process compatibility requirements, as
exemplified by the recent blossom in van der Waals integration of a broad range of 2D heterostructures. Here I
will discuss van der Waals integration as a general material integration approach beyond 2D materials for
creating diverse heterostructures (e.g., semiconductor/semiconductor, dielectric/semiconductor and
metal/semiconductor) with minimum integration-induced damage and interface states, enabling high-performing
devices (including high speed transistors, diodes, flexible electronics) difficult to achieve with conventional
“chemical integration” approach. A particular highlight is the creation of van der Waals metal/semiconductor
contacts free of interfacial disorder and Fermi level pinning, thus for the first time enabling experimental
validation of the Schottky-Mott rule first proposed in 1930s.

References

[1] L. Liao, J. Bai, Y. Qu, Y. Lin, Y. Li, Y. Huang and X. Duan. Proc. Natl. Acad. Sci. 107, 6711-6715 (2010) (DOI:
10.1073/pnas.0914117107).
[2] L. Liao, Y. Lin, M. Bao, R. Cheng, J. Bai, Y. Liu, Y. Qu, K.L. Wang, Y. Huang and X. Duan. Nature 467, 305-308
(2010) (DOI: 10.1038/nature09405).
[3] R. Cheng, J. Bai, L. Liao, H. Zhou, Y. Chen, L. Liu, Y. Lin, S. Jiang, Y. Huang and X. Duan. Proc. Natl. Acad. Sci.
109, 11588-11592 (2012) (DOI: 10.1073/pnas.1205696109).
[4] W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang and X. Duan. Nature Mater. 12, 246–252 (2013) (DOI:
10.1038/nmat3518).
[5] R. Cheng, S. Jiang, Y. Chen, Y. Liu, N.O. Weiss, H.-H. Cheng, H. Wu, Y. Huang and X. Duan. Nature Commun.
5, 5143 (2014) (DOI: 10.1038/ncomms6143).
[6] Y. Liu, N. O. Weiss, X. Duan, H. C. Cheng, Y. Huang and X. Duan. Nature Rev. Mater. 1, 16042 (2016) (DOI:
10.1038/natrevmats.2016.42).
[7] Y. Liu, J. Guo, E. Zhu, L. Liao, S. Lee, M. Ding, I. Shakir, V. Gambin, Y. Huang and X. Duan. Nature 557, 696-
700 (2018) (DOI: 10.1038/s41586-018-0129-8).
[8] C. Wang, Q. He, U. Halim, Y. Liu, E. Zhu, Z. Lin, H. Xiao, X.D. Duan, Z. Feng, R. Cheng, N. Weiss, G. Ye, Y.C.
Huang, H. Wu, H.-C. Cheng, L. Liao, X. Chen, W.A. Goddard, Y. Huang and X. Duan. Nature 555, 231-236
(2018) (DOI: 10.1038/nature25774).
[9] B. Yao, S.-W. Huang, Y. Liu, A. K. Vinod, C. Choi, M. Hoff, Y. Li, M. Yu, Z. Feng, D.-L. Kwong, Y. Huang, Y. Rao,
X. Duan and C. W. Wong. Nature 558, 410-414 (2018) (DOI: 10.1038/s41586-018-0216-x).
[10] Z. Lin, Y. Liu, U. Halim, M. Ding, Y. Liu, Y. Wang, C. Jia, P. Chen, X. Duan, C. Wang, F. Song, M. Li, C. Wan, Y.
Huang and X. Duan. Nature (2018) (DOI: 10.1038/s41586-018-0574-4).

6
Hong-Jun Gao
Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing
100190, P. R. China

hjgao@[Link]

Construction of Novel 2D Atomic/molecular Crystals and Its

physical Property
Control over charge and spin states at the single molecule level is crucial not only for a fundamental
understanding of charge and spin interactions but also represents a prerequisite for development of molecular
electronics and spintronics. While charge manipulation has been demonstrated by gas adsorption and atomic
manipulation, the reversible control of a single spin of an atom or a molecule has been challenging. In this
lecture, I will present a demonstration about a robust and reversible spin control of single magnetic metal-
phthalocyanine molecule via attachment and detachment of a hydrogen atom, with manifestation of switching of
Kondo resonance. Low-temperature atomically resolved scanning tunneling microscopy was employed. Using
density functional theory calculations, the spin control mechanism was revealed, by which the reduction of spin
density is driven by charge redistribution within magnetic 3d orbitals rather than a change of the total number of
electrons. This process allows spin manipulation at the single molecule level, even within a close-packed
molecular array, without concern of molecular spin exchange interaction. Moreover, I will talk about novel 2D
atomic crystals, for example, the templates of PtSe2 and CuSe recently developed for selective self-assembly
of molecules, as well as for the functionalization of the same substrate with two different species. This work
opens up a new opportunity for quantum information recording and storage at the ultimate molecular limit.

References

[1] 1. L. Gao, S.X. Du, H.-J. Gao et al. Phys. Rev. Lett. 99, 106402 (2007).
[2] 2. L.W. Liu, K. Yang, Y.H. Jiang, S.X. Du, and H.-J. Gao et al. Scientific Report 3, 1210 (2013).
[3] 3. L.W. Liu, S.X. Du, and H.-J. Gao et al. Phys. Rev. Lett. 99, 106402 (2015).
[4] 4. L.L. Jiang, H.-J. Gao, and F. Wang et al. Nature Materials 15, 840 (2016).
[5] 5. X. Lin, and H.-J. Gao et al. Nature Materials 16, 717(2017).

Figures

Figure 1: Different two-dimensional atomic crystals, silicene, germanene, PtSe2, CuSe etc., constructed by molecular
beam epitaxy.

7
Presenting Author: Wanlin Guo
Co-Authors: Zhuhua Zhang, Xuemei Li, Jun Yin
Institute of Nano Science, Nanjing University of Aeronautics and Astronautics.
Nanjing, 210016, China
wlguo@[Link]

Emerging Hydrovoltaic Technology

Water is not only the essence of life, but also the largest energy carrier on earth. Water covers about 70% of the
earth's surface, absorbing 70% of the solar energy arriving the earth, and in the atmosphere it can exist in
liquid, gaseous and solid states. In human history, through a variety of scientific principles, such as running
water driven wheel, steam locomotives, water driven generator as well as the electrokinetic effects, the potential
energy or kinetic energy of water can be converted into useful mechanical motion and electrical energy
according to the principles of classical mechanics and electromagnetic dynamics. In recent years, we have
theoretically and experimentally investigated the fluid-solid-electric coupling functionalization of graphene and
other two-dimensional materials. It is found that carbon nanostructures can generate electricity from water
energy by direct interaction with water, even by natural water evaporation from cheap carbon nanomaterials, a
phenomenon that we termed as hydrovoltaic effect, which potentially extends the technical capability of water
energy harvesting and enables creation of self-powered devices. Here, starting by presenting the water energy
on the earth, fundamental properties of water and water-solid interfaces, we discussed basic mechanisms of
harvesting water energy by carbon nanostructured materials and key aspects pertaining to water-carbon
interaction. Experimental advances in generating electricity from water flows, waves, especially natural water-
evaporation were then reviewed to show correlations in mechanisms and potential for integration, offering a
prospect of harvesting energy from the nature cycle of water on the earth. Main challenges in promoting the
energy conversion efficiency and scaling up the output power will be outlined, and finally discuss potential
development and applications of the hydrovoltaic technology.

References

[1] Penman, H. L. Natural Evaporation from Open Water, Bare Soil and Grass. Proc. R. Soc. Lond. A 193, 120-145
(1948).
[2] Yin, J., Zhang, Z., Li, X., Zhou, J. & Guo, W. Harvesting Energy from Water Flow over Graphene? Nano Lett. 12,
1736-1741 (2012).
[3] Yin, J., Zhang, Z., Li, X., Yu, J., Zhou, J., Chen, Y. & Guo, W. Waving potential in graphene. Nat. Commun. 5,
3582 (2014).
[4] Yin, J., Li, X., Yu, J., Zhang, Z., Zhou, J. & Guo, W. Generating electricity by moving a droplet of ionic liquid along
graphene. Nat. Nanotechnol. 9, 378 (2014).
[5] Xue, G., Xu, Y., Ding, T., Li, J., …, Zhou, J. & Guo, W. Water-evaporation-induced electricity with nanostructured
carbon materials. Nat. Nanotechnol. 12, 317 (2017).
[6] Zhang, Z.H., … Guo, W. Emerging hydrovoltaic technology, Nat. Nanotechnol. Accepted (2018).

8
Figures

Figure 1: About 70% solar energy arrive the earth is adsorbed by water and half of adsorbed energy consumed
by natural evaporation. The world energy consumption, reproducible energy, and the primary energy sources
are illustrated in proportional to the solar energy.

Figure 2: Harvesting the energy from the water cycle of the earth. (a) Devices for the energy harvesting(ref.6). (b)
Electricity generation from natural water evaporation in ambient environment by carbon nanomaterials (ref.5).

9
Lance Li
Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC)
168 Park Ave 2, Hsinchu Science Park, Hsinchu 300
ljliv@[Link]

Continue the transistor scaling with 2D materials: Challenges

and Perspective
Internet of things and artificial intelligence demand further transistor performance improvements and device size
scaling. In a conventional planar silicon field-effect transistor (FET), the gate controllability becomes weaker
when its lateral dimension scales. Hence the transistor body thickness needs to be reduced to ensure efficient
electrostatic control from the gate. When the silicon thickness reduces to a few nanometers, the fast mobility
decay owing to the scatterings from imperfect silicon surfaces retards the further scaling. New materials with
perfect surfaces are therefore needed and 2D semiconducting materials offer a chance to continue the scaling.

Silicon transistor evolution shall be discussed first. Many challenges are ahead for adopting 2D semiconductors
as FET channel materials, including (1) selection of 2D materials, (2) reduction of contact resistance, (3) growth
of wafer-scale and single-crystalline 2D materials, and (4) Integration of 2D materials to existing microelectronic
fabrication processes. In this presentation, we will discuss on these challenges and possible approaches.

10
Zhongfan Liu
Beijing Graphene Institute (BGI)
Center for Nanochemistry (CNC), Peking University, Beijing 100871, China
zfliu@[Link]

CVD Graphene: Scalable Growth and Beyond

High quality graphene material itself is the footstone of future graphene industry. Hence scalable synthesis of
graphene is extremely important, which will determine how far we can go with this wonderful two-dimensional
(2-D) material. In fact, in spite of the great efforts on controlled synthesis since its first isolation in 2004, a huge
gap still exists between the ideality and the reality. The ideal graphene material is composed of single crystalline
hexagonal honeycomb lattice of sp2 hybridized carbon atoms while the experimentally available graphene is a
polycrystalline film with lots of structural defects and unexpected noncarbon impurities.

Over last ten years, we have made great efforts on the controlled CVD growth of graphene film from lab-scale
fundamental studies to scalable instruments. The typical contributions include: roll to roll scalable growth
technique and instrument, 4 inch single crystal graphene wafer and instrument, the fast growth technique, the
doping growth with high carrier mobility, the CVD growth of superclean graphene, and etc. We have also
succeeded in growing high quality graphene films on traditional glasses. The graphene endowed glass with
extremely high thermal and electrical conductivities, leading to a new type of super graphene glasses. In a
similar way, the graphene film has been deposited onto optical fibers under a high-temperature growth process,
creating a graphene-decorated optical fiber. Various promising applications are demonstrated with these super
graphene glass and graphene-covered optical fibers. The talk will give a brief overview of our last ten years
studies on graphene synthesis and unique applications.

11
Hailin Peng
Center for Nanochemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing, China

hlpeng@[Link]

High-Mobility 2D Crystals: Controlled Synthesis and

Functional Devices
The unique structure and properties of two-dimensional (2D) crystals have a large impact on fundamental
research as well as applications in electronics, photonics, optoelectronics and energy sciences. Here our recent
studies on the controlled synthesis of high-mobility 2D crystals such as graphene and layered bismuth
oxychalcogenides (BOX, Bi2O2X: X = S, Se, Te), as well as their functional devices will be discussed. We
achieved batch-fabrication of ultraclean graphene films and membranes towards their killer applications. In
addition, novel air-stable ultrahigh-mobility semiconducting 2D BOX can be readily synthesized via chemical
vapor deposition and fabricated into high-performance field-effect transistors and NIR photodetectors, in which
pronounced quantum oscillations were also observed. Our studies suggest that high-quality 2D crystals hold
great promise for future applications.

References

[1] Wu, J.; Yuan, H.; Peng, H.; et al., Nature Nanotech. 2017, 12, 530.
[2] Wu, J.; Tan C.; Peng, H.; et al., Nano Lett. 2017, 17, 3021.
[3] Wu, J.; Liu, Y.; Tan, Z.; Peng, H.; et al., Adv. Mater. 2017, 29, 1704060.
[4] Yin, J.; Hong, H.; Wu, J.; Tan, Z.; Liu, K.; Peng, H.; et al., Nature Commun. 2018, accepted.
[5] Chen, C., Wang, M.; Wu, J.; Peng, H.; Chen, Y., et al., Science Adv. 2018, accepted.
[6] Zheng, W.; Peng, H.; et al., Nature Commun. 2015, 6, 6972.
[7] Peng, H.; et al., Nature Chem. 2012, 4, 281.
[8] Zhang, J.; Liu, Z.; Peng, H.; Adv. Mater., 2017, 29, 1700639.
[9] Xu, X.; Feng, D.; Peng, H.; Liu, K.; et al., Nature Nanotech. 2016, 11, 930.
[10] Yin, J.; Wang, H.; Chen, Y.; Peng, H.; Liu, Z.; et al., Nature Commun. 2016, 7, 10699.

12
Wencai Ren
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of
Sciences, Shenyang 11006, China
Contact@E-mail wcren@[Link]

Graphene Oxide: Green Synthesis and Membrane

Applications
Graphene oxide (GO), an important derivative of graphene, has shown a great potential for many applications
such as electronics, optoelectronic, energy storage, separation membranes, and composites. In this talk, I will
first introduce a green water electrolytic oxidation method for scalable and highly efficient production of GO.
Then, the influence of reduction degree on the performance of GO separation membranes will be discussed and
a highly stable GO-based separation membrane with superior permeability will be demonstrated. Finally, I will
introduce a scalable and efficient method to produce highly aligned and compact GO films. The synthesis of a
variety of high-performance functional films by this method will also be demonstrated, including super-strong
and highly conductive reduced GO films, reduced GO/single-walled carbon nanotubes hybrid films for flexible
supercapacitors with record volumetric energy density, highly anisotropic graphene nanocomposites as well as
various 2D nanosheet films and vertical heterostructures.

References
[1] W.C. Ren, H. M. Cheng, Nature Nanotechnology, 9 (2014) 724.
[2] S.F. Pei, Q.W. Wei, K. Huang, H.M. Cheng, W.C. Ren, Nature Communications, 9 (2018) 145.
[3] Q. Zhang, X.T. Qian, K.H. Thebo, H.M. Cheng, W.C. Ren, Science Bulletin, 62 (2018) 788.
[4] K.H. Thebo, X.T. Qian, Q. Zhang, L. Chen, H.M. Cheng, W.C. Ren, Nature Communications, 9 (2018)1486.
[5] J. Zhong, W. Sun, Q.W. Wei, X.T. Qian, H.M. Cheng, W.C. Ren, Nature Communications, Accepted.

13
Mauricio Terrones
Department of Physics, Department of Chemistry, Department of Materials Science and Engineering and
Center for 2-Dimensional & Layered Materials. The Pennsylvania State University, University Park,
Pennsylvania 16802, USA & Institute of Carbon Science and Technology, Shinshu University, JAPAN

mut11t@[Link]

A review of Defects in 2D Metal Dichalcogenides: Doping,

Alloys, Interfaces, Vacancies and Their Effects in Catalysis &
Optical Emission

In this presentation an overview of different defects in transmission metal di-chalcogenides (TMDs) will be
presented [1,2]. We will first focus on: 1) defining the dimensionalities and atomic structures of defects (Fig. 1);
2) pathways to generating structural defects during and after synthesis and, 3) the effects of having defects on
the physico-chemical properties and applications. We will also emphasize doping and allowing monolayers of
MoS2 and WS2, and their implications in electronic and thermal transport. We will also describe the catalytic
effects of edges, vacancies and local strain observed in Mo xW(1-x)S2 monolayers by correlating the hydrogen
evolution reaction (HER) with aberration corrected scanning transmission electron microscopy (AC-HRSTEM)
[3]. Our findings demonstrates that it is now possible to use chalcogenide layers for the fabrication of more
effective catalytic substrates, however, defect control is required to tailor their performance. By studying
photoluminescence spectra, atomic structure imaging, and band structure calculations, we also demonstrate
that the most dominating synthetic defect—sulfur monovacancies in TMDs, is responsible for a new low
temperature excitonic transition peak in photoluminescence 300 meV away from the neutral exciton emission
[4]. We further show that these neutral excitons bind to sulfur mono-vacancies at low temperature, and the
recombination of bound excitons provides a unique spectroscopic signature of sulfur mono-vacancies [4].
However, at room temperature, this unique spectroscopic signature completely disappears due to thermal
dissociation of bound excitons [4]. Finally, hetero-interfaces in TMDs, will be studied and discussed by AC-
HRSTEM and optical emission.

References

[1] Z. Lin, M. Terrones, et al. “Defect engineering of two-dimensional transition metal dichalcogenides”. 2D Materials 3
(2016) 022002.
[2] R. Lv, M. Terrones, et al. "Two-dimensional transition metal dichalcogenides: Clusters, ribbons, sheets and more".
Nano Today 10 (2015) 559-592.
[3] Y. Lei, M. Terrones, et al. "Low temperature synthesis of heterostructures of transition metal dichalcogenide alloys
(WxMo1-xS2) and graphene with superior catalytic performance for hydrogen evolution". ACS Nano, 11 (2017), 5103-
5112.
[4] V. Carozo, M. Terrones, et al. “Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer
tungsten disulfide”, Sci. Adv. 3 (2017), e1602813.

14
Figures

Figure 1: Different categories of defects in transition metal dichalcogenides according to their dimensionality.

Figure 2: (a) Atomic structure of single layer 1H-WS2. (b) Optical image of triangular WS2. (c) PL spectra obtained from
the marked regions in (b). Photoluminescence intensity image at 77 K of (d) X0 peak centered at 1970 meV and (e) XB
peak centered at 1690 meV. (f) XB and XB intensity profile acquired along the dashed line in (d) and (e).

15
Hua Zhang
Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological
University, 50 Nanyang Avenue, Singapore 639798, Singapore
HZhang@[Link]

Synthesis and Applications of Novel Two-Dimensional

Nanomaterials
In this talk, I will summarize the recent research on synthesis, characterization and applications of two-
dimensional nanomaterials in my group. I will introduce the synthesis and characterization of novel low-
dimensional nanomaterials, such as graphene-based composites including the first-time synthesized
hexagonal-close packed (hcp) Au nanosheets (AuSSs) on graphene oxide, surface-induced phase
transformation of AuSSs from hcp to face-centered cubic (fcc) structures, the synthesis of ultrathin fcc Au@Pt
and Au@Pd rhombic nanoplates through the epitaxial growth of Pt and Pd on the hcp AuSSs, respectively, the
first-time synthesis of 4H hexagonal phase Au nanoribbons (NRBs) and their phase transformation to fcc Au
RNBs as well as the epitaxial growth of Ag, Pt and Pd on 4H Au NRBs to form the 4H/fcc Au@Ag, Au@Pt and
Au@Pd core–shell NRBs, and the epitaxial growth of metal and semiconductor nanostructures on solution-
processable transition metal dichalcogenide (TMD) nanoshees at ambient conditions, single- or few-layer metal
dichalcogenide nanosheets and hybrid nanomaterials, the large-amount, uniform, ultrathin metal sulfide and
selenide nanocrystals, other 2D nanomaterials, nanodots prepared from 2D nanomaterials, and self-assembled
2D nanosheets and chiral nanofibers from ultrathin low-dimensional nanomaterials. Then I will demonstrate the
applications of these novel nanomaterials in chemical and bio-sensors, solar cells, water splitting, hydrogen
evolution reaction, electric devices, memory devices, conductive electrodes, other clean energy, etc.

16
17
Qiaoliang Bao
Department of Materials Science and Engineering, and ARC Centre of Excellence in Future Low-Energy
Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia

Tel: (+61) 3 9905 4927; E-mail: [Link]@[Link]

Photonic and Optoelectronic Device Applications Based on

2D Materials

Abstract
Our research interests are mainly focused on the light-matter interactions in 2D materials in terms of nonlinear
light absorption, light modulation (amplitude, phase and polarisation), wave-guiding and photo-detection. This
talk will give an overview of photonic and optoelectronic device applications based on these optical phenomena
in 2D materials [1-5]. Firstly, to overcome the limit light absorption in graphene and obtain large nonlinear
optical modulation depth, we developed a serials of new saturable absorbers based on graphene
heterostructures and other 2D materials, including graphene/Bi 2Te3 [6-8], black phosphorus [9-11] and self-
doped plasmonic 2D Cu3-xP nanosheets [12] as well as 2D halide perovskite [13-14]. Depending on their
nonlinear optical properties, either high energy Q-switched laser or ultrafast mode-locked pulse generation were
demonstrated. Secondly, in order to fabricate improved graphene photodetectors working in different spectral
ranges, we integrated graphene with other 2D materials with variant electronic structures, for example,
graphene/perovskite for visible light detection [15-16], graphene/MoTe2 and graphene/Cu3-xP for near infrared
light detection [17-18], and graphene-Bi2Te3 for broadband infrared light detection [19-20]. We show how photo-
gating effect plays a significant role to amplify the photocurrent in the photodetectors as well solar cell device
[21]. By fine tuning or aligning the electronic structure, we are able to engineer the depletion width in 2D
material heterostructures, such as graphene/WS2, MoS2/WS2 and WSe2/WS2 heterojunction [22-26],
monolayer-bilayer WSe2 heterojunction [27] and 2D perovskite p-n junction [28], so as to achieve higher photo-
responsivity and large photo-active area. Lastly, the THz light modulation associated with plasmonic excitation
in graphene/Bi2Te3, topological insulator Bi2Te3, graphene nanoribbon and 3D graphene was also investigated
using either spectroscopic or real space imaging techniques [29-32]. We show how the plasmonic coupling
happens in two Dirac materials, how high-order plasmonic modes are observed in 3D graphene structure, how
multiple plasmonic modes at sub-wavelength are achieved in graphene nanoribbon and how edge chirality
controls the plasmonic shift [29-32]. Furthermore, we update our recent progress on the synthesis of 2D non-
layered perovskite nanosheets [13-14] and other form of low-dimensional perovskites [33-34] as well as their
optoelectronic applications in waveguide [35-36], LED and solar cells [37-39]. In summary, the advances of 2D
materials may pave the way for the next generation photonic and optoelectronic device applications.

Keywords: graphene; photonics; optoelectronics, 2D materials.

References

[1] Bannur Nanjunda Shivananju et al., Advanced Functional Materials, 27 (19) (2017)1603918.
[2] Sathish Chander Dhanabalan et al., Nanoscale, 8 (2016) 6410 – 6434.
[3] Sathish Chander Dhanabalan et al., Advanced Science, 4(6) (2017)1600305.
[4] Joice Sophia Ponraj et al., Nanotechnology, 27 (2016) 462001.
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[6] Haoran Mu et al, ACS Photonics, 2 (7) (2015) 832–841.
[7] Fengnian Xia et al., Journal of Selected Topics in Quantum Electronics, 23(1) (2016) 8800105.
[8] Zhiteng Wang et al., Optical Engineering, 55(8) (2016) 081314.

18
[9] Haoran Mu et al., Advanced Optical Materials, 3 (2015)1447-1453.
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[11] Yingwei Wang et al., Applied Physics Letters, 107 (2015) 091905.
[12] Zeke Liu et al., Advanced Materials, 28 (2016) 3535–3542.
[13] Jingying Liu et al., ACS Nano, 10 (3) (2016) 3536–3542.
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Selective covers

19
Francesco Bonaccorso
Istitutito Italiano di Tecnologia, Graphene Labs, Via Morego 30, Genova, Italy
BeDimensional Srl, Via Albisola 121, Genova, Italy

[Link]@[Link]

Large scale production of 2D-materials for energy applications

2D materials are emerging as promising materials1-5 to improve the performance of existing devices or enable
new ones.1-5 A key requirement for the implementation of 2D materials in applications as flexible
(opto)electronics and energy is the development of industrial-scale, reliable, inexpensive production processes,2
while providing a balance between ease of fabrication and final product quality.
The production of 2D materials by solution processing 2,6 represents a simple and cost-effective pathway
towards the development of 2D materials-based (opto)electronic and energy devices, presenting huge
integration flexibility compared to other production methods. Here, I will first present our strategy to produce 2D
materials on large scale by wet-jet milling7 of their bulk counterpart and then an overview of their applications for
flexible and printed (opto)electronic and energy devices. 3,8,9,10,11,12,13,14
.

References

[1] A. C. Ferrari, F. Bonaccorso, et al., Scientific and technological roadmap for graphene, related two-dimensional
crystals, and hybrid systems. Nanoscale, 7, 4598-4810 (2015).
[2] F. Bonaccorso, et al., Production and processing of graphene and 2d crystals. Materials Today, 15, 564-589,
(2012).
[3] F. Bonaccorso, et. al., Graphene photonics and optoelectronics, Nature Photonics 4, 611-622, (2010).
[4] F. Bonaccorso, Z. Sun, Solution processing of graphene, topological insulators and other 2d crystals for ultrafast
photonics. Opt. Mater. Express 4, 63-78 (2014).
[5] G. Iannaccone, et al., Quantum engineering of transistors based on 2D materials heterostructures. Nature
Nanotech 13, , 183, (2018).
[6] F. Bonaccorso, et. al., 2D-crystal-based functional inks. Adv. Mater. 28, 6136-6166 (2016).
[7] A. E. Del Rio Castillo et. al., High-yield production of 2D crystals by wet-jet milling. Mater. Horiz. 5, 890 (2018).
[8] F. Bonaccorso, et. al., Graphene, related two-dimensional crystals, and hybrid systems for energy conversion
and storage. Science, 347, 1246501 (2015).
[9] J. Hassoun, et al. An advanced lithium-ion battery based on a graphene anode and a lithium iron phosphate
cathode Nano Lett. 14, 4901-4906 (2014).
[10] F. Bonaccorso, et al. Functionalized Graphene as an Electron Cascade Acceptor for Air Processed Organic
Ternary Solar Cells. Adv. Funct. Mater. 25, 3870-3880 (2015).
[11] F. Biccari, et al. “Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient
carrier collection” Adv. Energy Mater. 7, 1701349 (2017).
[12] S. Casaluci, et al. Graphene-based large area dye-sensitized solar cell module. Nanoscale 8, 5368-5378 (2016).
[13] A. Capasso, et al. Few-layer MoS2 flakes as active buffer layer for stable perovskite solar cells. Adv. Ener.
Mater. 6, 1600920, (2016).
[14] L. Najafi, et al. MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3
Perovskite Solar Cell with Efficiency over 20 %. ACS Nano 2018 in press

We acknowledge financial support from the European Union’s Horizon 2020 Graphene Flagship.

20
Goki Eda
Department of Physics/Chemistry, National University of Singapore, 2 Science Dr 3, Singapore 117551
[Link]@[Link]

Photonics of 2D semiconductors
Two-dimensional (2D) van der Waals semiconductors and their heterostructures are an attractive building block
for novel photonic devices due to their strongly excitonic character and electrical tunability. For the practical
implementation of photonic devices, it is crucial to understand the dynamics of charge [1] and exciton transfer
[2] at the van der Waals hetero-interfaces. The first part of this talk will focus on the fundamental optical
properties of monolayer transition metal dichalcogenides and persistent extrinsic effects associated with defects
and interfacial traps even in high quality materials. The second part will discuss various approaches to realizing
electrical generation of excitons and electroluminescence using van der Waal heterostructures [3]. Our group
achieved record-low current density threshold for excitonic electroluminescence with MIS-type heterostructures
[4]. I will discuss how low-current unipolar injection using hexagonal boron nitride is key to achieving ultralow
threshold and high quantum efficiencies. Our photocurrent spectroscopy results also reveal that interlayer
charge transfer dynamics is electrically tunable and competes with thermalization, allowing hot carrier energy
harvesting. I will also discuss our recent discovery of a novel monolayer MoS2 growth mechanism based on
vapor-liquid-solid conversion [5]. We show that alkali metal plays a key role in reducing the melting point of the
precursors and triggering the vapor-liquid-solid mode, yielding expitaxial growth of monolayer nanoribbons.

References

[1] X. Hong et al. ”Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures” Nature Nanotech. 9,
682 (2014).
[2] D. Kozawa et al. "Efficient interlayer energy transfer via 2D dipole coupling in MoSe2/WS2 heterostructures" Nano
Lett. 16, 4087 (2016).
[3] J. Wang et al. “Electroluminescent Devices Based on 2D Semiconducting Transition Metal Dichalcogenides” Adv.
Mater. 1802687 (2018) DOI: 10.1002/adma.201802687
[4] S. Wang et al. “Efficient carrier-to-exciton conversion in field emission tunnel diodes based on MIS-type van der
Waals heterostack” Nano Lett. 17, 5156 (2017).
[5] S. Li, et al. “Vapor-liquid-solid growth of monolayer MoS2 nanoribbons” Nat. Mater. 17, 535 (2018).

Figures

Figure 1: Schematic of MIS-type van der Waals heterostructure (left) and its electroluminescence spectra (right).

21
Yoshihiro Iwasa
Department of Applied Physics and QPEC, University of Tokyo, Tokyo 113-8656, Japan
RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan

iwasa@[Link]

Symmetry Controlled Optical Properties in TMD

Nanostructures
MoS2 and related semiconducting transition metal dichalcogenide (TMD) family is regarded as a gapped
graphene systems, the properties of which are controlled by the structural symmetry. The direct band gap at K
and –K points that appears in monolayer MoS2 is regarded as a mass gap opened by the in-plane broken
inversion symmetry as compared with the Dirac cone in monolayer graphene. Effects of structural symmetry on
TMDs can be investigated not only by thinning TMDs from bilayer to monolayer, but also by wrapping up the 2D
sheets to tubular structures. In this presentation, we would like to report a couple of subjects related to the Berry
curvature in 2D and 1D TMD nanostructures.
As a first topic, we report the exciton Hall effect [1]. Hall effect is a well known phenomena to determine the
carrier density in semiconductors, in which carriers are subjected to the transverse motion due to the Lorentz
force by the externally applied magnetic field. We found that exciton in monolayer MoS 2 shows a similar Hall
effect without external magnetic fields. This transverse motion of excitons are driven by the Berry curvature of
the K and K’ bands, which works as an internal magnetic field in the momentum space. From the real space
imaging of the exciton diffusion trajectories, we found that the valley diffusion length reached 2 m at 50 K.
The second subject is related to TMD nanotubes. TMD nanotube was first synthesized a quarter century ago
[2], however, the investigation of electronic properties have been started only several years ago [3]. Very
recently, our group have discovered superconductivity in individual WS 2 multiwalled nanotubes through ionic
gating [4], and photovoltaic properties of p-n junctions formed on the WS2 nanotubes [5]. In particular we focus
on the unique photovoltaic properties of WS2 multiwalled nanotubes, which clearly reflects its structural
symmetry.

References

[1] M. Onga, Y. J. Zhang, T. Ideue, and Y. Iwasa, Nat. Mater. 16 (2017) 1193.
[2] R. Tenne, L. Margulis, M. Genut, and G. Hodes, Nature 360 (1992) 444.
[3] R. Levi, O. Bitton, G. Leitus, R. Tenne, and E. Joselevich, Nano Lett. 13 (2013) 3736.
[4] F. Qin, W. Shi, T. Ideue, M. Yoshida, A. Zak, R. Tenne, T. Kikitsu, D. Inoue, D. Hashizume and Y. Iwasa,
Nat. Comm. 8 (2017) 14465.
[5] Y. J. Zhang, M. Onga, F. Qin, W. Shi, A. Zak, R. Tenne, J. Smet and Y. Iwasa, 2D Materials 5 (2018) 035002.

22
Mikito Koshino
Department of Physics, Osaka University, Toyonaka, 560-0043, Japan
koshino@[Link]

Effective theory for the flat band in the twisted bilayer

graphene
The recent discovery of the superconductivity and strongly correlated insulating state in the twisted bilayer
graphene (TBG) attracts enormous attention [1,2]. TBG is a sandwitch of two graphene layers stacked with a
rotational orientation [Fig.1(a)]. There a slight rotation gives rise to a long-period moiré pattern, substantially
modifying the electronic property. Due to the huge moire pattern, the unit cell of TBG includes more than 10,000
carbon atoms. It is a challenging problem to theoretically describe the many-body physics in such a complex
system. Here we develop an effective theory to describe the many-body physics in TBG [3]. By using the
realistic band model and with the aid of the maximally localized algorithm, we construct the Wannier orbital,
which works as the effective composite “atom” on the moiré pattern. The effective atomic orbital has a
characteristic three-peak structure [Fig.1(b)], and it leads to unexpected properties of many body states. For
example, we find that an electronic excitation can be viewed as a pair creation of the fractional charges in units
of e/3, which would possibly give rise to exotic physics. Our effective model dramatically reduces the
fundamental complexity of the electronic system in TBG, and it would be greatly beneficial to future theoretical
studies. It opens the way to explore the many-body physics in TBG.

References

[1] Y. Cao, et al, Nature (556), 2018, 43.

[2] Y. Cao, et al, Nature (556), 2018, 80.
[3] M. Koshino, N. F. Q. Yuan, T. Koretsune, M. Ochi, K. Kuroki, and L. Fu, arXiv:1805.06819, to be published in
Phys. Rev. X

23
Mario Lanza1*
Yuanyuan Shi1,2, Xianhu Liang1, Bin Yuan1, Victoria Chen2, Haitong Li2, Fei Hui1,
Zhouchangwan Yu2, Fang Yuan2,3, Eric Pop2, H.-S. Philip Wong2
1 Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nanoscience and
Technology, Soochow University, Suzhou, 215123, China
2 Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
3 Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong

Mlanza@[Link]

Building the hardware of future artificial intelligence systems:

two-dimensional materials based electronic synapses
Artificial intelligence (AI) systems are essential for modern societies because they can produce important
progress in fields like economy (e.g. new jobs, powerful analysis tools), health (e.g. take care of elderly and
children) and national security (e.g. autonomous machinery). Current AI systems rely on advanced computers
to process a massive amount of data and carry out complex operations very fast (<1 ns/operation), and by
using sophisticated algorithms they have been able to emulate some functionalities of animal brains (e.g.
spiders, mice, cats). However, their computing capability and energy efficiency is still very far from that of
human brains. The main reason is that traditional computers have a von Neuman structure, in which the data is
computed in the central processing unit and stored in the memory unit. This produces a bottleneck that strongly
limits the performance and enhances the power consumption of the entire system. On the contrary, the human
brain uses an ultra-dense neural network to process and store the information in parallel. A human brain
contains ~1012 neurons, each of them electrically connected to other ~1000 neurons through synapses;
therefore, the total number of synapses in a human brain is ~1015. The synapses are biological membranes that
can change their conductivity (when they receive an electrical impulse from a neuron) by segregating Ca2+ ions.
The learning is achieved by: i) generating new synapses, and ii) modifying the conductivity of the synapses
(a.k.a. synaptic weight). Depending on the learning process, the changes on the synaptic weight (produced by
neuronal spikes) can last in a timescale from milliseconds to minutes (i.e. short term plasticity, STP) or for
minutes or longer (i.e. long term plasticity, LTP).

In order to create more powerful and efficient AI systems, electronic engineers have started to consider the
possibility of designing new electronic circuits that act as artificial neural networks. Several different electronic
components, including three-terminal devices or filed effect transistor based devices, ferroelectric switches and
memory devices, have been suggested as the hardware implementation of electronic synapses for artificial
neural networks. However, the designs have always resulted very complex and the performance too low (i.e.
unable to emulate several simple learning rules that are readily carried out by biological synapses). Recently,
two-terminal resistive switching (RS) devices based on a metal/insulator/metal (MIM) nanocells have been
suggested as the ideal candidate device for the implementation of electronic synapses because their working
principle resembles very well that of a biological synapse [1], i.e. changes in resistivity can be induced by
applying electrical impulses to one of the electrodes, which produces the segregation of metallic and/or oxygen
ions in the MIM cell. By using a wide range of metallic and insulating materials combinations, the emulation of
LTP and its characteristic figures of merit has been readily achieved, including long term potentiation, long term
depression, paired-pulse facilitation (PPF), paired-pulse depression (PPD), spike-timing dependent plasticity
(STDP) and spike-rate dependent plasticity (SRDP) [2]. However, the traditional materials used in MIM-like
electronic synapses have strong difficulties to generate progressive and linear resistivity changes, implement
both STP and LTP in the same device, and generate stable and reproducible resistivity changes.

24
In our group we have solved some of these technological challenges by introducing two-dimensional (2D)
materials in the structure of the RS devices. Some attempts of building electronic synapses using 2D materials
have been reported [3], but those prototypes used planar configurations, which occupy much more space than
vertical MIM cells, cannot be stacked three dimensionally and suffer from a higher device-to-device variability [4]
(in fact, the RS industry only uses vertical configurations). Moreover, in most cases the 2D material was
synthesized via mechanical exfoliation [5], which is not scalable and therefore unsuitable for building large-area
synaptic networks. Here we report the first realization of vertical MIM-like electronic synapses using 2D
materials produced by chemical vapor deposition (CVD), which is a scalable method [6]. By using multilayer
hexagonal boron nitride (h-BN) sheets as RS medium, we have been able to implement both volatile and non-
volatile RS simultaneously, which allows emulating several STP and LTP synaptic behaviors, including PPF,
PPD, relaxation and STDP. The working regime can be selected by tuning the amplitude, duration and interval
of the electrical stimuli. While until now all previous synaptic studies reported slow (0.1-100 s) erratic relaxation
process during 0.1-100 s, here we show a fast (~200 µs) and stable relaxation during more than 500 cycles,
with a very low variability. The power consumption of the synapses in volatile regime is 0.1 fW in standby and
600 pW per transition, and we find that the pulse voltage plays a more important role in the potentiation of the
synapses than the pulse time/interval. These performances are enabled by a novel switching mechanism that
combines characteristics from CBRAM and ReRAM. The volatile and non-volatile nature of the RS has been
confirmed at the nanoscale via CAFM, demonstrating excellent potential for scalability. This work represents an
important advancement for the development of electronic synapses in terms of performance and, as only
scalable processes have been used, these methods may be employed to build 2D materials synaptic networks.

References

[1] P. A. Merolla, Science 345, 668-673 (2014).

[2] M. A. Zidan et al. Nat. Electron. 1, 22-29 (2018).
[3] H. Tian et al. Nano Lett. 15, 8013-8019 (2015).
[4] F. Hui et al. Adv. Electron. Mater. 3, 1600195 (2017).
[5] M. Wang et al. Nat. Electron. 1, 130-136 (2018).
[6] Y. Shi et al. Nat. Electron. 1, 458–465 (2018)

Figures

Figure 1: (Left) (a-d) Crsos sectional TEM images of the metal/h-BN/metal electronic synapses. (e-d) Top-view SEM
images of the metal/h-BN/metal synapses with cross-point structure. (Right) (a-d) Potentiation of a h-BN based synapse
by applying pulsed voltage stresses with different height, duration and interval. Reprinted with permission from Ref. [6]

25
Feng Miao
Nanjing University, Nanjing, China

miao@[Link]

Electronic Transport and Device Applications of 2D Materials

Two-dimensional (2D) materials have emerged as promising candidates for post-Moore electronics due to
their unique electronic properties and atomically thin geometry. I will start with our studies on atomically thin
semiconducting material rhenium disulfide (ReS2) and type-II Weyl semimetal (WSM) tungsten ditelluride
(WTe2). We observed interesting in-plane anisotropic transport and mechanical properties of ReS2, together
with its potential electronic and optoelectronic applications.[1] In thin tungsten ditelluride (WTe 2) flakes, we
observed notable angle-sensitive negative longitudinal magnetoresistance (MR) and strong planar orientation
dependence which reveal important transport signatures of chiral anomaly and type-II Weyl fermions. By
applying a gate voltage, we further demonstrated that the Fermi energy can be tuned through the Weyl points
via the electric field effect; this is the first report of controlling the unique transport properties in situ in a WSM
system.[2]
By stacking layers of different 2D materials together, van der Waals (vdW) heterostructures offer
unprecedented opportunities to create materials with atomic-level precision by design, and combine superior
properties of each component. In the second part of my talk, I will show that robust memristors with good
thermal stability, which is lacking in traditional memristors, can be created from a vdW heterostructure
composed of graphene/MoS2–xOx/graphene.[3] Our latest results on high-performance mid-infrared
photodetectors based on atomically thin vdW heterostructures made of black arsenic phosphorus and transition
metal dichalcogenides will also be presented.[4]

References

[1] Liu, et al., Nat. Comm. 6, 6991 (2015); Adv. Func. Mater. 26, 1938 (2016); Wang, et al., ACS Nano (2018).
[2] Wang, et al., Nat. Comm. 7, 13142 (2016); Hao, et al., Adv. Func. Mater. (2018).
[3] Wang, et al., Nat. Electronics 1, 130 (2018).
[4] Long, et al., Science Adv. 3, e1700589 (2017); Nano Lett. 16, 2254 (2016).

26
Young-Woo Son
Korea Institute for Advanced Study, Seoul, Korea

hand@[Link]

Effects of interlayer interactions on physics of

layered crystals
In this talk, I will review my recent studies on critical effects of interlayer interaction in determining electronic,
structural and magnetic properties of layered two-dimensional crystals. It is shown that the structural stabilities,
electronic energy bands as well as topological properties are critically dependent of nature of interlayer
interactions between adjacent two-dimensional crystals. Examples includes twisted bilayer graphene, 1T’-type
transition metal dichalcogenides and two-dimensional magnetic crystals.

27
Lixian Sun
Fen Xu, Yongjin Zou, Cuili Xiang, Pengru Huang, Hongliang Peng
Guilin University of Electronic Technology, 1 Jinji Road, Guilin, China

sunlx@[Link]

Interfacing graphene with nanoparticles for energy and gas

storage as well as sensors
Graphene, a very attractive two-dimensional carbon nanomaterial with superior electrical conductivity, excellent
mechanical flexibility, and high thermal and chemical stability, has been widely used in many fields [1]. The
extraordinary properties of graphene including high (ballistic) charge mobility and the potential for n- or p-doping
can provide high conductivity materials depending on their structural quality. Multiple applications including as
materials for gas and energy storage could be within reach if irreversible aggregation, or re-stacking, of
graphene nanosheets could be inhibited. Furthermore, its chemical inertness makes it difficult to attach gas
molecules on the surface of graphene directly and interfacing the graphene surface with other nanoparticles is a
possible solution [2,3]. In our recent work, graphene oxide was enlisted as a substrate to induce nanosized
MOFs. By growth nanosized Cu-BTC on the surface of graphene, the GO/Cu-BTC composite shows improved
hydrogen storage and CO2 capture [Link] composite material exhibited about a 30% increase in CO2
and H2 storage capacity (from 6.39 mmolg−1 of Cu-BTC to 8.26 mmol g−1 of CG-9 at 273 K and 1 atm for CO2;
from 2.81 wt% of Cu-BTC to 3.58 wt% of CG-9 at 77 K and 42 atm for H2) [4]. By doping graphene with
polyaniline and Pd nanoparticles, The resulting Pd–PANI–rGO nanocomposite was highly sensitive and
selective to hydrogen gas, with fast response time in air at room temperature. The significantly enhanced
sensitivity resulted from the faster spill-over effect, dissociation of hydrogen molecules on Pd, and the high
surface area of the PANI–GO composite [5]. By doping graphene oxide with flower-like cobalt–nickel–tungsten–
boron oxides, The Co–Ni–W–B–O/rGO composites resembled three-dimensional flowers with high surface
area; they also exhibited superior electrochemical performance when compared to most previously reported
electrodes based on nickel–cobalt oxides. Furthermore, the Co–Ni–W–B–O/rGO composite prepared in an
ethanol solution showed much higher electrochemical performance than that the composite prepared in water.
The Co–Ni–W–B–O/rGO electrode showed an ultrahigh specific capacitance of 1189.1 F g −1 at 1 A g−1 and
exhibited an high energy density of 49.9 Wh kg −1 along with remarkable cycle stability, which is promising for
application in energy storage devices [6]. By spontaneous polymerization of pyrrole and formation of PB
nanocubes on GO, The resultant supercapacitor based on PPy–PB–GO exhibits both double-layer and
pseudocapacitance. The hybrid electrode showed a maximum specific capacitance of 525.4 F g−1 at a current
density of 5 A g−1. It also exhibited excellent cyclic stability of 96% retention for up to 2000 cycles [7].

References

[1] M.H. Yu, Y.C. Huang, C. Li, Y.X. Zeng, W. Wang, Y. Li, P.P. Fang, X.H. Lu, Y.X. Tong, Adv. Funct. Mater.,
25(2015)324–330.
[2] S.H. Cho, J.S. Lee, [Link], S.G. Kim, J. Jang, Nanoscale, 6(2014)15181–1595.
[3] H. Furukawa and O. M. Yaghi, J. Am. Chem. Soc., 131(2009)8875–8883.
[4] S. Liu, L. Sun, F. Xu, J. Zhang, C. Jiao, F. Li, Z. Li, S. Wang, Z. Wang, X. Jiang,H. Zhou, [Link], C. Schick,
Energy Environ. Sci., 6(2013)818–823.
[5] Y. Zou, Q. Wang, C. Xiang, C. Tang,H. Chu, S Qiu, E. Yan, F. Xu, L. Sun, Int. J. Hydrogen Energy,
41(2016)5396-5404.
[6] [Link], Q. Wang, Y. Zou, P. Huang, H. Chu, S. Qiu, F. Xu, L. Sun, J. Mater. Chem. A, 5(2017)9907–9916.
[7] Y. Zou, Q. Wang, C. Xiang, Z. She, H. Chu, S. Qiu, F. Xu, S. Liu, C. Tang, L. Sun, Electrochimica Acta 188
(2016) 126–134.

28
Figure 1: Graphene oxide induced nanosized Cu-BTC for gas adsorption.

29
Jian-Bin Xu
The Chinese University of Hong Kong, Shatin, Hong Kong SAR, China
Shenzhen Institutes of Advanced Technology, CAS, Shenzhen, China

jbxu@[Link]

Optoelectronic Devices Based on Graphene-Like Materials and

their Related Heterostructures
Abstract
Graphene is a wonderful material thanks to its peculiar electronic, optical, thermal, and mechanical properties.
In the past decade or so, advances in graphene-based devices have been evidently demonstrated, which shed
light on the potential applications from visible to terahertz (THz) light waves. In order to enhance the
performance of conventional graphene-based optoelectronic devices confined by the limited length of light-
matter interaction on a nanometer scale, we develop the novel design and fabrication of high-performance
graphene-based optoelectronic devices (particularly, photodetectors (from visible to the near-infrared regions)
and THz modulators), by utilizing the extraordinary electronic and optical properties of graphene and its intrinsic
transition characteristics. Similar strategies are applicable to other two-dimensional transition metal
dichalcogenides (TMDs) and the related heterostructures.

References

[1] Z. F. Chen, J. B. Xu, et al, accepted.

[2] Z. F. Chen, X. M. Li, J. Q. Wang, L. Tao, M. Z. Long, S. J. Liang, L. K. Ang, C. Shu, H. K. Tsang, J. B. Xu, ACS
Nano 11, 430-437 (2017)
[3] L. Tao, Z. F. Chen, X. M. Li, K. Y. Yan, J. B. Xu, npj 2D Materials and Applications 1, 19 (2017)
[4] L. Ye, P. Wang, et al., Nano Energy 37, 53 (2017)
[5] X. D. Liu, Z. F. Chen, E. P. J. Parrott, B. S. Y. Ung, J. B. Xu, E. Pickwell-MacPherson, Advanced Optical
Materials 5, UNSP 1600697 (2017)
[6] Z. F. Chen, Z. Z. Cheng, J. Q. Wang, X. Wan, C. Shu, H. K. Tsang, H. P. Ho, J. B. Xu, Advanced Optical
Materials 3, 1207-1214 (2015)

Figures

Figure 1: The conductivity of graphene in a broad spectral range.

30
Guanglin Xia
Xuebin Yu
Department of Materials Science, Fudan University, Shanghai, China

guanglin@[Link]

Graphene-Supported Complex Hydrides as Advanced

Hydrogen Storage Materials
Complex hydrides are a fascinating class of materials that can be used for several energy applications and
devices, particularly as hydrogen storage materials owing to their high gravimetric and volumetric storage
densities of hydrogen.[1] Nevertheless, complex hydrides still suffer from sluggish kinetics and poor reversibility
owing to the grain growth, phase separation, and particle agglomeration during hydrogen sorption cycles at
elevated temperature.[2] Downsizing materials to the nanometer scale is an effective way to relieve the inherent
limitations to the diffusion of elements in the solid state and facilitate destabilization induced by excess surface
energy.[3] Graphene with ultrahigh surface area could serve as a structural support to promote the synthesis of
the nanostructured materials, but also physically prevent agglomeration and phase segregation during the
hydrogen absorption and desorption cycles.[4,5] Therefore, space-confinement via graphene has been adopted
as an effective tool to modify the hydrogen storage performance of complex hydrides. In this talk, I will first
discuss the main ideas in this field, and then present some selected examples and our recent results of how the
performance of complex hydrides can be improved through graphene.

References

[1] Orimo S. I.; Nakamori Y.; Eliseo J. R.; Zuttel A.; Jensen C. M., Chem. Rev., 2007, 107, 4111.
[2] Niaz S.; Manzoor T.; Pandith A. H., Renew. Sust. Energ. Rev., 2015, 50, 457.
[3] Yu X. B.; Tang Z. W.; Sun D. L.; Ouyang L. Z.; Zhu M., Prog. Mater. Sci., 2017, 8, 1.
[4] Xia G. L.; Tan Y. B.; Chen X. W.; Sun D. L.; Guo Z. P.; Liu H. K.; Ouyang L. Z.; Zhu M.; Yu X. B., Adv. Mater.,
2015, 27, 5981.
[5] Zhang H. Y.; Xia G. L.; Zhang J.; Sun D. L.; Guo Z. P.; Yu X. B., Adv. Energy Mater., 2018, 8, 1702975.

Figures

Figure 1: Self-assembly of metal hydrides nanoparticles on graphene and the induced excellent reversibility.

31
32
Slaven Garaj
Department of Physics, Department of Biomedical Engineering and Centre for Advanced 2D Materials
National University of Singapore
Singapore
slaven@[Link]

Nanofluidics with graphene and graphene-oxide membranes

Water and ions show curious behavior when constricted by two-dimensional materials at the scales of
few nanometers or less – the phenomena include the edge-enhance ionic current in graphene nanopores [1,2],
anomalous ionic flow in nanotubes, and frictionless water transport in graphene [3] and graphene-oxide (GO)
nanochannels [4, 5]. Intimate understanding of such behavior would raise prospects in many applications,
including filtration membranes, single-biomolecule analysis, supercapacitors, etc.

In this talk, I will present a systematic experimental investigation of the ionic flow in nanopores and
nanochannels, as well as microscopic GO membranes. We investigated ionic flow in atomically-smooth
graphene channels with height ranging from 0.7 – 3 nm and in chemically controllable GO channels. We
identified several mechanisms that control ionic mobility in different systems: (a) mobility enhancement in
smooth channels; (b) compression of the ionic hydration shell; (c) ionic electrostatic repulsion due to the
membrane surface charge; and (d) chemically-specific interactions.

Armed with the insight into the physical mechanism governing the ionic flow, we are able to rationally
engineer new membranes of desirable properties. With such tunability, we demonstrate a range of scaled-up
membranes for desalination, electrodialysis and pervaporation, with properties matching or exceeding those of
commercial membranes.

References

[1] Garaj, S. et al. Graphene as a subnanometre trans-electrode membrane. Nature 467, 190–193 (2010).
[2] Garaj, S., Liu, S., Golovchenko, J. A. & Branton, D. Molecule-hugging graphene nanopores. Proc Natl Acad Sci
USA 110, 12192–12196 (2013).
[3] Radha, B. et al. Molecular transport through capillaries made with atomic-scale precision. Nature 538, 222–225
(2016).
[4] Nair, R. R., Wu, H. A., Jayaram, P. N., Grigorieva, I. V. & Geim, A. K. Unimpeded Permeation of Water Through
Helium-Leak–Tight Graphene-Based Membranes. Science 335, 442–444 (2012).
[5] Hong, S. et al. Scalable Graphene-Based Membranes for Ionic Sieving with Ultrahigh Charge Selectivity. Nano
Lett. 17, 728–732 (2017).

33
Figures

Figure 1: Atomic force microscopy of ultra-clean, atomically-smooth graphene nanochannels with height ranging from 0.7
– 3 nm, and micrometers long.

34
Jin-Song Hu
Ding-Jiang Xue, Shun-Chang Liu, Yu-Si Yang
Institute of Chemistry, Chinese Academy of Science, Beijing 100190, China

Contact: hujs@[Link]

2D Germanium Selenide for Photovoltaics and Optoelectronics

Abstract: 2D germanium selenide including GeSe and GeSe2 has attracted significant attention recently due to
its intriguing in-plane anisotropic properties originated from the low-symmetry crystal structure, as well as earth-
abundant and low-toxic constitutes.[1-3] As for GeSe, we reported the first GeSe thin-film solar cell with an
efficiency of 1.48%,[1] and systematically investigated the basic physical properties of GeSe films including
refractive index, dielectric constant, carrier mobility, lifetime, and diffusion length, [2] providing a solid foundation
for the further development of GeSe solar cells. With regard to GeSe2, we studied the in-plane anisotropic
structural, vibrational, electrical, and optical properties from theory to experiment. Photodetectors based on
GeSe2 exhibit a highly polarization-sensitive photoresponse in short wave region due to the optical absorption
anisotropy induced by in-plane anisotropy in crystal structure. [3]

References

[1] Xue, D.-J.; Liu, S.-C.; Dai, C.-M.; Chen, S.; He, C.; Zhao, L.; Hu, J.-S.; Wan, L.-J., J. Am. Chem. Soc. 2017, 139
(2), 958-965.
[2] Liu, S.-C.; Mi, Y.; Xue, D.-J.; Chen, Y.-X.; He, C.; Liu, X.; Hu, J.-S.; Wan, L.-J., Adv. Electron. Mater. 2017, 3 (11),
1700141.
[3] Yang, Y.; Liu, S.-C.; Yang, W.; Li, Z.; Wang, Y.; Wang, X.; Zhang, S.; Zhang, Y.; Long, M.; Zhang, G.; Xue, D.-J.;
Hu, J.-S.; Wan, L.-J., J. Am. Chem. Soc. 2018, 140 (11), 4150-4156.

Figures

Figure 1: 2D crystallographic structure of GeSe and GeSe2

35
Takamasa Kawanago
FIRST, Tokyo Insititute of Technology, 2-12-1-S9-12, Ookayama, Meguro-ku, Tokyo, 152-8550, Japan

[Link]@[Link]

Two-Dimensional Inorganic/Organic Hetero Interface

for Field-Effect Transistor Applications
Two-dimensional (2D) materials, such as layered transition metal dichalcogenides (TMDC)
semiconductors, are emerging research areas that involve multiple fields ranging from fundamental scientific
interests to practical device applications [1]. Primary concerns of 2D materials to device applications is that
conventional semiconductor process (e. g. high temperature anneal, ion implantation and thermal diffusion) is
not applicable since these fabrication steps disrupt and spoil the 2D crystal structure, resulting in the
degradation of characteristics or failure of devices [2]. In this context, molecular chemistry approaches to 2D
TMDC have considerable attention because of their low temperature, low energy process [2]. In addition,
amazingly rich chemistry and structure of organic molecules enables not only the tailoring of the properties of
TMDC but also the fabricating of the functional devices [2].
This study describes our experimental results regarding the hybrid systems based on TMDC and
organic self-assembled monolayer (SAM) for functional device applications [3]. The SAM is 2D organic
molecular monolayer that spontaneously organizes at specific surface [4]. The SAM can tailor surface and
interfacial properties including adhesive, hydrophilic, and hydrophobic properties [5]. A recent study has also
demonstrated that a SAM can be utilized as ultrathin gate dielectric for field-effect transistors (FET) [6]. A
phosphonic acid-based SAM can provide a low gate leakage current owing to its close-packed structure even
when the physical thickness is 2.1 nm [6]. In this study, SAM-based gate dielectric with n-octadecylphosphonic
acid (ODPA) is applied to the fabrication of molybdenum disulfide (MoS2) FET [3]. Of particular interest in this
study is how the MoS2/SAM structure affects the interfacial properties and electrical characteristics. The
interfacial properties of semiconductor/dielectric structure fundamentally determines the device characteristics
of FET. Since the terminal functional group of ODPA consists of a methyl group (–CH3), an inert surface that
has electrical and chemical stability is accomplished. Consequently, superior interfacial properties can be
anticipated for the MoS2/SAM structure.
The fabrication process and device structure are summarized in Fig. 1. An Al gate electrode and Au
source/drain contacts were prepared on a SiO2/Si substrate by mask contact photolithography. The substrate
was exposed to oxygen plasma to form AlOx and a hydroxyl groups on the surface of Al. Then, the substrate
was immersed in 2-propanol containing 5 mM ODPA for 1 h at room temperature. Mechanically exfoliated MoS2
flakes were deterministically transferred to the substrate using a poly(dimethylsiloxane) (PDMS) elastomer and
micromanipulator. Subthreshold slope (SS) of 69 mV/dec and no hysteresis were obtained from the Id-Vg
characteristics, indicating a low defect density at the MoS2/SAM interface (Fig. 2). TEM image highlights the flat
and abrupt interface of the MoS2/SAM structure (Fig. 2). The fabricated FET device has a peak mobility of 13
cm2/Vs from Id-Vg and C-V characteristics (Fig. 3). This studies open up interesting directions for research on
the functional devices based on 2D materials.

References
[1] Q. H. Wang et al., Nat. Nanotechnol. 7, 699 (2012).
[2] S. Bertolazzi et al., Chem. Soc. Rev. 47, 6845 (2018).
[3] T. Kawanago et al., Appl. Phys. Lett. 108, 041605 (2016).
[4] J. C. Love et al., Chem. Rev. 105, 1103 (2005).
[5] J. E. Greene, Appl. Phys. Rev. 2, 011101 (2015).
[6] H. Klauk et al., Nature 445, 745 (2007).

36
Figures

SiO2 (400nm)/n-Si wafer Exposure to O2 plasma

H H
Al (80nm) deposition by thermal evaporation Al gate MoS2 PDMS OH OH OH OH OH OH
Au pad elastomer H H
Photolithography for Al etching with TMAH (1) (4) H H Al
Au (20nm) deposition by thermal H H
H SiO2 (400nm)
evaporation and lift-off process H
H H
Au(40nm)/Al(10nm) deposition by thermal H n-Si
H (1)
evaporation and lift-off process Alignment & Contact H H
Exposure to O2 plasma for 20 min H H CH3(CH2)17PO(OH)2
(2) (5) H H
to form AlOx and hydroxyl groups H H
Immersion in 2-propanol containing 5 mM H H (CH2)15
n-octadecylphosphonic acid (ODPA) for 1 h H H H2O
H H
Rinsing in pure 2-propanol and H
Au contact / Al adhesion Peel-off & Transfer H P
blowing with dry nitrogen H OH Covalent bonding
H O
o
Baked on a hot plate at 100 C for 10 min (3) (6) H H OH through O atom
to stabilize ODPA H H OH OH OH OH OH OH
H
Transfer of MoS2 flakes on patterned substrate O P OH
with PDMS elastomer Al
FET OH SiO2 (400nm)
Annealing in N2 at 140 oC for 30 min SAM/AlOx gate dielectrics
CH3(CH2)17PO(OH)2
n-Si
(2)

Figure 1: Fabrication process and device structure. Chemical structure of ODPA are also shown

-5 -5
12 10 10
(a) (b) (c)
Vgs = 2 V 10
-6 Lg = 10 m 10
-6
10 Lg = 10 m -7 -7 MoS2
10 10
Drain Current (A)

Drain Current (A)

Vds = 0.05 V
Gate Current (A)
-8 -8 45nm
8 1.5 V 10 10
-9 -9
10 10
6 -10
Vth = -0.6 V -10
SAM/AlOx
1V 10 10
-11
SS = 69 mV/dec -11
4 10 10
0.5 V -12 -12
10 10 Al
2 -13 -13
0V 10 10 10 nm
-14 -14
0 10 10
0 1 2 3 4 5 -2 -1 0 1 2
Drain Voltage (V) Gate Voltage (V)

Figure 2: (a) Id-Vd, (b) Id-Vg characteristics and (c) TEM image of MoS2 FET with SAM-based gate dielectric

0.6 100
(a) 532 nm (b) (c)
Lg = 10 m
laser line 0.5
Electron Mobility (cm /Vs)

E12g A1g
Vds = 0.02 V
2
Capacitance (pF)
Intensity (a.u.)

0.4

0.3 10
10kHz
100kHz
0.2 500kHz
1MHz
0.1 1 I d (Vg )
  Lg  
2

Bulk  C (Vg )dV Vd

20 m 0 1
360 370 380 390 400 410 420 430 -2 -1 0 1 2 -1 0 1 2
-1
Raman Shift (cm ) Gate Voltage (V) Gate Voltage (V)

Figure 3: (a) Raman spectra, (b) C-V characteristics and (c) Mobility of MoS2 FET with SAM-based gate dielectric

37
Keun Su Kim
Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, Korea
keunsukim@[Link]

Bandgap engineering of two-dimensional semiconductors

Layered two-dimensional (2D) semiconductors, such as black phosphorus and transition-metal dichalcogendies,
have emerged as a class of materials that may impact our future electronics technologies. Controlling their band
structure widely with external parameters is important not only for application in various electronic and optical
devices, but also to systematically study a novel quantum state of matter. In this talk, I will introduce our recent
angle-resolved photoemission spectroscopy (ARPES) studies on a novel mechanism to modulate the band gap
of black phosphorus [1] and 2H transition-metal dichalcogenides [2]. The widely tunable band gap of black
phosphorus could be exploited to create a topologically nontrivial state with a pair of Dirac fermions protected by
its unique crystalline symmetry [3]. Electron doping to the surface of transition-metal dichalcogenides can also
be used to explore a novel compsite particle arising from intervalley electron-phonon coupling [4].

References

[1] J. Kim et al., Science, 349 (2015) 723.

[2] M. Kang et al., Nano Letters, 17 (2017) 1610.
[3] J. Kim et al., Physical Review Letters, 119 (2017) 226801.
[4] M. Kang et al., Nature Materials, in press (2018).

38
Yen-Fu Lin
Department of Physics, National Chung-Hsing University, Taichung, 40227, Taiwan

E-mail: yenfulin@[Link]

Performance potential and limit in van der Waals MoTe2

Transistors
Due to the versatile and tunable properties in nature, atomically thin transition-metal dichalcogenides (TMD)
with the common formula MX2, where M stands for a transition metal (Mo or W) and X is a chalcogen element
(S, Se, Te), have garnered considerable attention for development of next-generation electronics from 2011.
Among the TMD compounds, 2H-type molybdenum ditelluride (MoTe2) has a smaller semiconducting gap in
the range of 0.8 to 1.0 eV, which gives a high compatibility with modern Si thin-film processing. In this talk, I
will present the synthesis, thickness identification of layered MoTe 2 materials as well as its electrical
characterizations. In contrast to the unipolar features in widely studied MoS 2 transistors, van der Waals MoTe2
transistors display the ambipolarity in charge transport, which is attributed to the existence of Schottky
potential barriers between metals and conducting channel [1]. Through applying different controlled electric
field, the modulation of such the potential barrier can be realized, allowing a low contact resistance for both n-
and p-type channels, which will also be discussed. In addition, to deliberately explore the fluctuation
mechanism of carrier trapping/de-trapping in such nanoscale electronics, I will demonstrate the origin of
electric noise in van der Waals MoTe2 transistors by means of the strategy of low-frequency noise
measurements [2]. The experimental data clearly suggest that the dynamic processes at the channel surface
such as gas absorptions/desorptions strongly affect its carrier transport. Eventually, using this feature of gas
absorptions/desorptions, I will show a new doping concept, electrothermal doping [3]. The electrothermal
doping adopted in obtaining p/n-type doping MoTe2 transistors can provide an approach to create logic
devices with desired performance.

References
[1] Yen-Fu Lin, Yong Xu, Sheng-Tsung Wang, Song-Lin Li, Mahito Yamamoto, Alex Aparecido-Ferreira, Wenwu Li,
Huabin Sun, Shu Nakaharai, Wen-Bin Jian, Keiji Ueno, and Kazuhito Tsukagoshi, Adv. Mater. 26, 3263 (2014).
[2] Yen-Fu Lin, Yong Xu, Che-Yi Lin, Yuen-Wuu Suen, Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, and Kazuhito
Tsukagoshi, Adv. Mater. 27, 6612 (2015).
[3] Yuan-Ming Chang, Shih-Hsien Yang, Che-Yi Lin, Chang-Hung Chen, Chen-Hsin Lien, Wen-Bin Jian, Keiji Ueno,
Yuen-Wuu Suen, Kazuhito Tsukagoshi, and Yen-Fu Lin, Adv. Mater. 30, 1706995 (2018).
Figures

Figure 1: Room-temperature transfer characteristics of van der Waals MoTe2 transistors under different Vds
values on a linear scale (a) and on a logarithmic scale (b). (c) Typical current fluctuations as a function of
frequency under different Vbg values. (d) Schematic of a MoTe2 channel processed by the electrothermal
doping process and the corresponding transfer characteristics.

39
Hongyang Liu
Shenyang National Lab for Material Science, Institute of Metal Research, Chinese Academy of Sciences,
Shenyang, 110016, China
liuhy@[Link]

Nano-Graphene Based Catalyst for Efficient Light Alkane

Activation
Nanocarbon is a term increasingly used to indicate the broad range of carbon materials having a tailored
nanoscale dimension and functional properties that significantly depend on their nanoscale features. Recently,
lots of studies have demonstrated that nanocarbons, such as carbon nanotube (CNT), porous graphene and
nanodiamond (ND) can be used as metal free catalysts for the light alkane dehydrogenation reaction, showing
their potential applications to replace the traditional metal oxide catalyst. In this report, we will not only present
our recent studies about the exploration of nanocarbons (graphene and graphene@nanodiamond hybrid
nanocarbons) as metal free catalysts for the industrial dehydrogenation reaction, but also we will introduce the
fabrication of nanocarbon materials ( hollow carbon sphere and hollow graphene nanoshell) embedded by Au
and Pd nanoparticles used in catalytic oxidation and hydrogenation reaction, and the stabilization of Pd, Pt
nanoparticles, especially the atomically dispersed metal species on the novel nanodiamond@graphene hybrid
nancarbons with core–shell structure for efficient light alkane dehydrogenation reaction. The detailed preparing
process, characterization, catalytic performance and mechanism will be carefully discussed in the report [1-8].

References

[1] H.Y. Liu, L.Y. Zhang, N. Wang, D. S. Su et al., Angew. Chem. Int. Ed., 2014, 53, 1263;
[2] L.Y. Zhang, H.Y. Liu, D.S. Su et al., Angew. Chem. Int. Ed.,, 2015, 54, 15823;
[3] X. R. Zhang, Z.S. Meng, H.Y. Liu and R.F. Lu et al., Energy & Environmental Science, 2016, 9, 841;
[4] J Liu, H.Y. Liu and D.S. Su et al., ACS Catalysis, 2017, 7, 3349.
[5] T. Hao, F. Huang, H.Y. Liu and J. Liu, et al. Adv. Funct. Mater., 2018, 28, 1801737;
[6] J. Diao and H.Y. Liu, et al. ACS Catalysis, 2018, 8, 10051;
[7] F. Huang, H.Y. Liu and D. Ma, et al. J. Am. Chem. Soc. 2018, doi:10.1021/jacs.8b07476.

Figures

Figure 1: Scheme of Pt nanoparticles supported on the novel hybrid carbon support with a nanodiamond core and
ultrathin graphene shell for the propane dehydrogenation reaction, HAADF-STEM images of the corresponding supported
Pd nanoparticles: Pd/ND@G (a, b) and Pd/OLC (c,d).

40
Lei Miao
Jie Gao, Huajun Lai
Guilin University Of Electronic Technology, Guilin, China

nextyeargj@[Link]

Enhanced Thermoelectric Performance in Graphene Quantum

Dots/Te Nanowires Flexible Hybrid Film
Graphene has been proved to be positive for reducing thermal conductivity in many thermoelectric
nanocomposites. Here we prepared graphene quantum dots (GQDs) /Te nanowires flexible hybrid films on mica
substrate through drop-cast method. After being annealed in H2/Ar atmosphere, the hybrid films show enhanced
thermoelectric performance due to the redox-reaction between GQDs and Te nanowires during annealing
process. The thermoelectric performance of hybrid films can be further adjusted via changing size and
percentage of GQDs in film. This work provides insights for the synthesis of graphene-based hybrid
thermoelectric films.

41
Pilkyung Moon1
Mikito Koshino2, Young-Woo Son3
1New York University Shanghai, Shanghai, China,
2Osaka University, Toyonaka, Japan, 3Korea Institute of Advanced Study, Seoul, Korea

[Link]@[Link]

Theory of Dirac Electrons in

a Dodecagonal Graphene Quasicrystal
Quantum states of quasiparticles in solids are dictated by symmetry. Quasicrystals, which can have
quasiperiodic orders (such as rotational symmetry) without spatial periodicity, have been used to study quantum
states between the limits of periodic order and disorder. The study of the influence of quasiperiodic order has
focused on extended wave functions of ordered states, pseudogaps, and fine structures of density of states.
However, these studies have been limited to nonrelativistic fermions.

Recently, we reported that a relativistic Dirac fermion quasicrystal can be realized when the Dirac electrons in a
single-layer graphene are incommensurately modulated by another single-layer graphene which is rotated by an
exact 30° [1].

When two-dimensional atomic layers are stacked incommensurately, the interference between the two lattice
arrangement leads to new order to the system. For example, the incommensurate stack of two graphene layers
at a rotation angle other than 0 and 30° exhibits an extra periodicity in the form of moiré pattern (aka twisted
bilayer graphene) [2]. The physical properties of twisted bilayer graphene are well described by the effective
theory based on the moiré interference period [3-5]. However, such moiré periodicity disappears at a rotation
angle of 30°, since the structure gains a 12-fold rotational symmetry which is not compatible with a translation.
Mathematically, it is known that two honeycomb structures overlaid at 30° form a dodecagonal quasicrystal [6].

In this talk, I will discuss the theory of Dirac electrons in a dodecagonal graphene quasicrystal. I will first explain
the emergence of the infinite number of Dirac cone replicas in ARPES in terms of the generalized Umklapp
scattering. The contribution of multiple scattering to the unusually strong scattering signals associated with long
wave vectors will be emphasized as well. In addition, I will show that the configuration of the Dirac cone replicas
near the Γ point provides a solid evidence of the rotation angle at an exact 30° [1].
Moreover, I will report a rigorous effective model to describe the electronic structures of the graphene
quasicrystal and show that very unique features, such as the neither localized nor extended states (aka critical
states), arise in this system [7].

References

[1] S. J. Ahn,* P. Moon,* T.-H. Kim,* H.-W. Kim, H.C. Shin, E. H. Kim, H. W. Cha, S.-J. Kahng, P. Kim, M. Koshino,
Y.-W. Son,† C.-W. Yang,† and J. R. Ahn,† Science 361, 782 (2018) (*: co-first authors, †: co-corresponding
authors).
[2] C. Berger et al., Science 312, 1191 (2006).
[3] J. M. B. Lopes dos Santos, N. M. R. Peres, and A. H. Castro Neto, Phys. Rev. Lett. 99, 256802 (2007).
[4] P. Moon and M. Koshino, Phys. Rev. B 85, 195458 (2012).
[5] P. Moon and M. Koshino, Phys. Rev. B 87, 205404 (2013).
[6] P. Stampfli, Helv. Phys. Acta 59, 1260 (1986).
[7] P. Moon, M. Koshino, and Y.-W. Son (in preparation).

42
Figures

Figure 1: Color-coded dodecagonal tiling of the TEM image of a graphene quasicrystal [1].

Figure 2: Electronic structures of a graphene quasicrystal calculated by the effective model [7].

43
Aitor Mugarza
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science
and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain.
ICREA Institució Catalana de Recerca i Estudis Avançats, Lluis Companys 23, 08010 Barcelona, Spain
[Link]@[Link]

Engineering nanoporous graphene with atomic precision

Nanosize pores can turn semimetallic graphene into a semiconductor [1, 2] and from being impermeable into
the most efficient molecular sieve membrane [3, 4]. However, scaling the pores down to the nanometer, while
fulfilling the tight structural constraints imposed by applications, represents an enormous challenge for present
top-down strategies.
Here we report a bottom-up method to synthesize nanoporous graphene comprising an ordered array of pores
separated by ribbons, which can be tuned down to the one nanometer range [5]. The size, density, morphology
and chemical composition of the pores are defined with atomic precision by the design of the molecular
precursors. Our DFT-STS study reveal a highly anisotropic electronic structure, where orthogonal one-
dimensional electronic bands with an energy gap of ~1 eV coexist with confined pore states that might sense
passing ions and molecules. The semiconducting character of the nanomaterial has been further confirmed by
fabricating field-effect transistors with state of art on/off ratios. The combined structural and electrical properties
makes this nanoporous 2D material a highly versatile semiconductor for simultaneous sieving and electrical
sensing of molecular species.

References

[1] J. Bai, X. Zhong, S. Jiang, Y. Huang, X. Duan, Nat. Nanotechnol. 5, 190–194 (2010).
[2] X. Liang et al., Nano Lett. 10, 2454–2460 (2010).
[3] S. Garaj et al., Nature. 467, 190–193 (2010).
[4] S. P. Koenig, L. Wang, J. Pellegrino, J. S. Bunch, Nat. Nanotechnol. 7, 728–732 (2012).
[5] C. Moreno et al., Science (80-. ). 360, 199–203 (2018).

Figures

Figure 1: STM images (bottom) and schematic representation (top) of the precursor, intermediates and final product of
the hierarchical synthesis of nanoporous graphene.

44
Ching-Yuan, Su
Graduate Institute of Energy Engineering, National Central University, Taiwan
cysu@[Link]

Rational Design of Nanostructured and Functionalized

Graphene and Their Applications for Electronics and Energy
Devices
2D materials, including graphene and MoS2 and phosphorene, have attracted intensive interests due to their
unique chemical and physical properties. These tremendous features make them as promising candidates for
applications on nano-electronics, sensors, and energy storage. In this talk, three main related topics will be
conducted: (1) The current developed approaches for the synthesis of 2D materials, such as Spiral-CVD
graphene, printed MoS2-nano-ribbon, and phosphorene. [1-7] In particularly, the proof-of-concept on
phosphorene-based RRAM device was demonstrated with reliable and superior performance, such as high
on/off current ratio of ~105 and stable retention >104 s. [8] (2) We demonstrate an all screen-printable solid-state
micro-supercapacitor(MSCs), which was integrated with graphene/CNTs as hierarchical electrodes. It exhibits a
high cycling stability after 1000 cycles and excellent mechanical flexibility. The extracted energy and power
density of 16.4 mWh/cm3 and 294.8 W/cm3, which was, to our best knowledge, the highest performance for
ultra-thin(<5 um) MSCs. This work provides a scalable and cost-effective method to produce solid-state MSCs
with high energy density. (3) Fluorinated graphene has been synthesized by various approaches; however,
most of the processes using toxic chemicals with complex steps, which hinder the practical applications. Here,
we report a novel hydrothermal method for fabricating FG through frequently used Nafion as reagents. The FG
coated substrate shows high hydrophobic property, where the contact angle (water) of above 120o was
achieved. Finally, the composite film with FG(0.75 wt%) as an additive in epoxy shows excellent anticorrosion
ability with corrosion rate at 2.9x10-5 mm/year, which was ~200% enhanced if compare it with pristine epoxy.
This work proposed a one-pot and green process for preparing FG in a scalable way, which is potential for
applications in the sustainable environment in the future.

References

[1] Y. M. Chen et al., Nanoscale, 8, 3555 (2016)

[2] J. Y. Syu, et al., RSC Advances, 6, 8384 (2016)
[3] C. H. Chen, et al., Nanoscale, 7, 15362 - 15373 (2015)
[4] D. Dutta et al., Nanoscale, 10, 12612 (2018)
[5] K. I. Ho, et al., Advanced Materials, 27, 6519 (2015)
[6] K. I. Ho, et al., Scientific Reports, 4, 5893 (2014)
[7] K. I. Ho, et al., Small, 989–997 (2014)

45
Taishi Takenobu
Dept. of Applied Physics, Nagoya Univ., Bldg.3 Room 261, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

takenobu@[Link]

Electrochemically Doped Light-Emitting Devices of

Transition Metal Dichalcogenide Monolayers
Recently, 2D layered materials have attracted much attention for exploring new electronic,
optoelectronic, and photonic applications. Particularly, direct bandgap and unique electronic structure in
monolayer transition metal dichalcogenides (TMDCs) provides a platform for exploring novel optoelectronic
functionalities and devices [1,2]. One of the most interesting properties of TMDCs is topological features, such
as a non-centrosymmetric two-dimensional crystal, strong spin-orbit interaction, non-zero Berry curvature and
resulting spin-valley coupling [3]. Actually, circularly polarized light emission has been demonstrated [4,5].
Although the optical properties of TMDCs are very promising, light-emitting devices require intentional
doping techniques to form p-n junction. However, reliable doping methods for TMDCs have not yet been fully
established. Therefore, the fabrication of TMDC light-emitting devices are still limited, and this fundamental
barrier has made investigating electroluminescence (EL) properties of TMDCs inevitably difficult [2]. To
overcome this issue, we recently developed the electrochemical method to dope both holes and electrons [6-10],
and proposed a simple approach to form p-n junction universally in TMDCs [11-13].
Firstly, as shown in Fig. 1, we fabricated ion-gel (a mixture of ionic liquid and triblock co-polymer) gated
EDLTs (Electric Double Layer Transistors) using large-area TMDC monolayers, such as MoS2 and WSe2,
grown by chemical vapor deposition [6-10]. The Fermi level of TMDCs can be continuously shifted by applying
gate voltage, and we can induce both hole and electron transport in these devices. The hole mobility of WSe2
can be enhanced up to 90 cm2/Vs at high carrier density of 1014 cm-2, whereas the MoS2 showed electron
mobility of 60 cm2/Vs. By the combination of p-type WSe2 and n-type MoS2, we fabricated CMOS inverters [10].
Here, we use this technique to form p-n junction (Fig. 2) and apply this method into various forms of
TMDCs, such as monolayer polycrystalline films (Fig. 3(a)), single crystalline flakes (Fig. 3(b)), and lateral
heterojunctions (Fig. 3(c)), to achieve photo-detection [11] and EL emission [12,13]. Particularly, using single
crystal samples, we have performed temperature and position dependent measurements of EL and investigated
their optical properties. Very interestingly, we observed robust circularly polarized EL emission, arising from
spin-valley coupling in TMDCs. Our approach paves a versatile way for using TMDCs in discovering new
functional optoelectronic devices.

References
[1] X. Xu, et al. Nat. Phys. 10, 343 (2014).
[2] J. Pu and T. Takenobu, Adv. Mater. 30, 1707627 (2018).
[3] D. Xiao, et al., Phys. Rev. Lett. 108, 196802 (2012).
[4] K. F. Mak et al., Nat. Nanotechnol. 7, 494 (2012).
[5] Y. J. Zhang, et al. Science 344, 725 (2014).
[6] J. Pu, T. Takenobu, et al., Nano Lett. 12, 4013 (2012).
[7] J. Pu, T. Takenobu, et al., Appl. Phys. Lett. 103, 23505 (2013).
[8] J.-K. Huang, T. Takenobu, et al., ACS Nano. 8, 923 (2014).
[9] Y.-H. Chang, T. Takenobu, et al., ACS Nano. 8, 8582 (2014).
[10] J. Pu, T. Takenobu, et al., Adv. Mater. 28, 4111 (2016).
[11] D. Kozawa, T. Takenobu, et al., Appl. Phys. Lett. 109, 201107 (2016).
[12] J. Pu, T. Takenobu, et al. Adv. Mater. 29, 1606918 (2017).
[13] M.-Y. Li, J. Pu, T. Takenobu, Adv. Funct. Mater. 28, 1706860 (2018).

46
Figures

Figure 1: Schematic illustrations of ion-gel gated EDLT (left) and p-type WSe2/n-type MoS2 CMOS inverters (right).

Figure 2: Schematic illustrations of a proposed light-emitting device.

Figure 3: Optical microscope (OM) and electroluminescence (EL) images of various form TMDCs.

47
Li Tao
Southeast University, Nanjing, China
tao@[Link]

Emerging 2D Xenes for Innovative Nanoelectronics

Two-dimensional (2D) Xenes (monoatomic sheets, e.g. silicene and phosphorene)
have collective properties of mechanical flexibility and tunable bandgap holding great
promise for novel nanoelectronics beyond graphene. Nonetheless, there is a challenge in
experimental device studies largely due to air-stability related material and process issues.
This talk highlights state-of-the-art experimental progress in synthesis, stabilization and
device integration of monolayer silicene and thicker derivatives. With a unique sandwich
encapsulation process, we enabled silicene transistor debut[1]. By tuning integration
process and number of layers[2], we further improved portability and reliability.
Electrostatic characteristics of silicene field-effect transistor exhibits ambipolar charge
transport with extracted mobility 100-200 cm2/V-s at residual carrier density ~8×109 cm-2,
corroborating with theoretical predictions on Dirac cone in band structure. The electronic
structure of silicene is expected to be sensitive to substrate interaction, surface chemistry,
and spin-orbit coupling, holding great promise for a variety of novel applications, such as
topological bits, quantum sensing and energy devices[3]. We applied above strategy to
phosphorene, few-layer black phosphorus, and demonstrated mobility 310-1500 cm2/Vs,
gate modulation 103-5 and intrinsic fT=20 GHz on flexible polyimide substrates[4, 5]. Recent
progress on silicene and phosphorene (transferable to other Xenes like stanine and
germanene) represent a renewed opportunity for future nanoelectronics complementary to
what is available in graphene[6].

References
[1] L. Tao, E. Cinquanta, D. Chiappe, et al.,
Nature Nanotech. 10 10 (2015).
[2] C. Grazianetti, E. Cinquanta, L. Tao, et al.,
ACS Nano 11 3 (2017).
[3] A. Molle, C. Grazianetti, L. Tao, et al.,
Chem. Soc. Rev. 47 16 (2018).
[4] W. N. Zhu, M. N. Yogeesh, S. X. Yang, et
al., Nano Lett. 15 3 (2015).
[5] W. Zhu, S. Park, M. N. Yogeesh, et al.,
Nano Lett. 16 4 (2016).
[6] S. Kabiri Ameri, R. Ho, H. Jang, et al.,
ACS Nano 11 8 (2017).

Figure: Xene device integration.

48
Yihe Zhang
Qi An, Wangshu Tong, Xuelian Yu, Li Sun, Hongwei Huang, Ke Wang
China University of Geosciences, Xueyuan Road 29, Beijing, China

zyh@[Link]

Graphene Composites as Energy, Catalyst, Environmental and

Biomedical Materials, and Full Utilization of Graphite-Mining
Graphene is considered as one potential revolutionary material, due to its collective properties of mechanical
strength and flexibility, tunable electronic behavior, optical transparency, etc. Most graphene-related
applications are based on graphene composites, as a result of a trade off between performance and cost. In the
past decade, our group has demonstrated a series of graphene composites aiming at energy storage and
transformation[1-5], photocatalysis[6--9], biomedical devices[10-13], etc. This presentation illustrates some typical
works, such as a generator and in situ storage unit based on reduced graphene oxide (rGO)-PVDF-HPF film,
and several novel graphene based-electrodes in lithium-ion batteries and super-capacitors. Meanwhile, the
explosive development in graphene also stimulates exploitation of graphite. Consequently, a discussion about
utilizing all the component during graphite-mining is also carried out, including the flake graphite, low grade
graphite, tailings, and so on.

Figures References

[1] W. S. Tong, Y. H. Zhang et al, Advanced

Functional Materials, 25 (2015) 7029-7037
[2] H. T. Li, H. Dai, Y. H. Zhang et al, Angew.
Chem. Int. Ed., 56 (2017) 1-7
[3] L. Q. Bai, Y. H. Zhang et al, Nano Energy,
Accepted
[4] L. Sun et al, Chem. Commun. 54 (2018)
10172–10175
[5] L. Sun, Y. Zhang et al, Nanoscale, 9 (2017)
18552-18560
[6] W. S. Tong, Y. H. Zhang et al, Nano Energy,
53(2018) 513–523
[7] Q. Zhang, Q. An et al, Nanoscale, 7 (2015)
14002-14009
[8] Q. Zhang, Y. H. Zhang et al, Scientific Reports
7 (2017) 12296
[9] X. L. Yu, Y. H. Zhang et al, Appl. Catal. B-
Envrion. 182 (2016) 504-512
[10] K. Nie, Q. An et al, RSC Advances, 5 (2015)
57389–57394
[11] Y. Zhang, Q. An et al, Small 14(2018) 1802136
[12] L. Liu, X. L. Yu et al, New J. Chem., 41(17)
(2017) 9008-9013
[13] L. Liu, Y. H. Zhang et al, Analyst, 142(5) (2017)
780-786
Figure: (a-f) Schematic illustrations of rGO-PVDF-HFP
film as both energy generator and in situ Storage Unit; (f)
rGO-PVDF-HFP film as substrate for photocatalysis.

49
Jijun Zhao
School of Physics, Dalian University of Technology, Dalian 116024, China
zhaojj@[Link]

Computational design of novel 2D electronic and magnetic

materials
Abstract
Theoretical design based on first-principles computations play an important role in the research and innovation
of 2D materials. In the past few years, our group has designed a series of novel 2D electronic, magnetic and
optoelectronic materials: (1) 2D semiconductor with high carrier mobility including monolayer -Cu2S [1],
GeAsSe, and SnSbTe [2]; (2) Janus group-III chalcogenide monolayers with enhanced piezoelectricity [3]; (3)
monolayer group-III monochalcogenides by oxygen functionalization as 2D topological insulators [4]; (2) Y2N
monolayer as high-speed Dirac half-metal [5]; (5) monolayer MnB as 2D ferromagnet with high Curie
temperature [6] (see Figure 1).

References

[1] Y. Guo, et al., Nanoscale Horizons (2018)

[2] Y. Guo, et al., Frontier of Physics 13 (2018) 138117
[3] Y. Guo, et al., Appl. Phys. Lett. 110 ( 2017) 163102.
[4] S. Zhou, et al., npj Quantum Materials 2018, 3, 16
[5] Z. F. Liu, et al., Nano Res. 10 (2017) 1972.
[6] Z. Jiang, et al., Nanoscale Horizons 3 (2018) 335.

Figures

Figure 1: (left) Y2N monolayer as a Dirac half-metal, (right) monolayer MnB as 2D ferromagnet with high
Curie temperature.

50
Renzong Hu
Min Zhu
Guangdong Provincial Key Laboratory of Advanced Energy Storage Materials, School of Materials Science
and Engineering,South China University of Technology, Guangzhou, China
msrenzonghu@[Link]

Highly reversible conversion reactions in lithiated SnO2 based

thin film anode materials
Tin dioxide (SnO2) has been considered one of the most promising alternative anode materials for lithium
batteries. In the past two decades, extensive studies have been directed to gaining a fundamental
understanding of the lithiation/delithiation reactions to improve the performance of SnO2-based electrodes.
However, the conversion reaction in lithiated SnO2 that produces Li2O has long been believed irreversible and
considered the main cause of large capacity loss and low initial Coulombic efficiency of SnO2 and other oxide
electrodes. Accordingly, a key question highlighted in Chiang’s Perspectives (Building a better Battery, Science,
2010, 330, 1485) is how to overcome the irreversibility of Li2O in SnO2 anode to fully exploiting the limit of the
capacity of the electrode materials.

Here we demonstrated that Li2O can indeed be highly reversible in a SnO2 thin film electrode with controlled
nanostructure and achieved an initial Coulombic efficiency of ~95.5%, much higher than that previously
believed possible (52.4%). Insitu spectroscopic and diffraction analyses corroborate the highly reversible
electrochemical cycling, suggesting that the interfaces and grain boundaries of nano-sized SnO2 may suppress
the coarsening of Sn and enable the conversion between Li2O and Sn to amorphous SnO2 when de-lithiated.
Furthermore, we have found that the application of super-elastic films of NiTi alloy could accommodate the
internal stress and volume change of lithiated nano-SnO2 layer and thus effectively suppress Sn coarsening, to
retain the high reversibility of the SnO2 layer with reversible capacity more than 800mAh/g (based on SnO2) for
over 300 cycles, demonstrating stable charge capacities of ~400mAh/g in the potential ranges of 0.01-1.0V and
1.0-2.0V(vs. Li/Li+), respectively.

Furthermore, we designed a double-layer electrode of a SnO2 film coated with an ALD Al2O3 Layer. The Al2O3
coating (~2 nm in thick) on the surface helps to maintain the structural stability of SnO2 layer (~20 nm), while the
inside filling Al2O3 increases the boundary integrity of SnO2 naocrystals, and acts as barriers to prevent the
lithiation induced Sn coarsening during cycling. In particular, the Al2O3 layer stabilizing the solid electrolyte
interphase formed on the surface of electrode, enabling enhanced roundtrip efficiency. Thus this SnO2/Al2O3
electrode contributes superior electrochemical performance with a high ICE (88.1%), better reversible capacity
retention (88.9% after 200 cycles) than that of the pure SnO2 anode (30.6%), demonstrating that surface
modification on nanograins of conversion type anode materials could be helpful for enhancing the reversibility
and cyclability of the electrode, enabling high stable reversible capacity.

References

[1] R.Z Hu, M. Zhu*, H. Wang, et al., Acta Materialia, 2012, 60:4695-4730.
[2] H.P. Zhang, Z. W. Chen, R.Z. Hu*, et al., Journal of Materials Chemistry A, 2018, 6: 4374-4385.
[3] R.Z. Hu, D.C. Chen, G. Waller, et al., Energy & Environmental Science, 2016, 9:595-603
[4] R.Z. Hu, Y.P. Ouyang, D.C. Chen, et al., Acta Materialia, 2016, 109: 248-258.
[5] R.Z. Hu, Y.P. Ouyang, T. Liang, et al., Energy & Environmental Science, 2017, 10:2017-2029.
[6] R.Z. Hu, Y.P. Ouyang, T. Liang, et al., Advanced Materials, 2017, 29: 1605006.
[7] H.Y. Zhang, R.Z. Hu*, Y.X. Liu, et al., Energy Storage Materials, 2018, 13:257-266

51
Figures

Figure 1: The high density interfaces and grain boundaries of nano-sized SnO2 suppress the coarsening of Sn and
enable the conversion between Li2O and Sn to amorphous SnO2 when de-lithiated, resulting in a high initial Coulombic
efficiency of ~95.5% in pure SnO2 film anodes.

Figure 2: SnO2/Al2O3 film electrode contributes superior electrochemical performance with a high ICE (88.1%), better
reversible capacity retention (88.9% after 200 cycles) than that of the pure SnO2 film anode (30.6%).

52
53
Daniel HC Chua
National University of Singapore, Dept of Materials Science and Engineering, Singapore

msechcd@[Link]

New varieties of Metal Sulphides / Phosphides for Electronics

and Clean Energy applications
Abstract
Transition metal dichalcogenides (TMD) materials have attracted much attention due to their unique properties,
ranging from low dimensional effects, good structural integrity, high electrical and thermal conductivity, and
chemical stability. Increasingly, much of the applications have gradually progressed into different specific areas
ranging from electronics to conductive coatings to biomedical technology.

In this talk, I will focus on new varieties of transition metal sulphides and phosphides, which are specifically
designed and engineered. Two examples will be shown, the first is CuS, which is well known as a
photosensitive material which possesses catalytical behavior. We will show there exist unique non-volatile
memory behavior not previously known with low voltage switching of -3V and a switching speed of <20ms.
Likewise, we will also show other forms of CoS where it has good water splitting capability. Likewise, we will
demonstrate the more stable forms of metal phosphides, such as CoP and NiP where it has superior properties
as compared to the more well studied sulphides in water splitting. We will also show some results where hybrid
metal sulphides and phosphides can enhance catalytical reactions.

References

[1] Yu S.H. and D.H.C Chua, ACS Applied Materials & Interface, DOI: 10.1021/acsami.8b02755
[2] Ng Z.Q.C, [Link], [Link], A.T.S. Wee and D.H.C. Chua, Applied Physics Letters, doi: 10.1063/1.5027129

Figures

Figure 1: 2 dimensional flat plates of CuS with resistive random access memory behavior.

54
Chang-Hua Liu
Jiajiu Zheng, Shane Colburn, Taylor K. Fryett, Yueyang Chen, Xiaodong Xu, Arka
Majumdar
Institute of Photonics Technologies, National Tsing Hua University

chliu@[Link]

Developing ultrathin light emitters and metalenses based on

van der Waals materials
Van der Waals (vdW) materials have generated strong interest in recent years due to their unusual and superior
optoelectronic properties. These materials can be integrated on any substrate without needing explicit lattice
matching. This presents new opportunities for creating hybrid nano-structures which can take advantage of
industrial semiconductor manufacturing technologies, while benefiting from the unique properties of vdW
materials. Here, we will outline an architecture of ultrathin light emitter, composed of 2D heterostructures light
emitting diode stacked with a photonic crystal cavity. The light emission near the cavity area is highly linear
polarized with the degree of polarization ~84%. More importantly, its emission intensity is enhanced by more
than 4 times. As applying voltage pulses, we show the emitter can be modulated at 1 MHz speed at room
temperature, faster than most of optoelectronics based on transition metal chalcogenides.

In addition to light emitters, we will demonstrate dielectric metalenses with their thickness approaching ~0.14 λ.
Such features are realized by exploiting two-dimensional (2D) materials as dielectrics while leveraging
incomplete phase design. Based on these design schemes, the developed ultrathin devices not only can be
applied at 1310, 650 and 450 nm wavelength regimes, showing near diffraction-limited focusing, but also exhibit
their capabilities for imaging applications. Due to the van der Waals (vdWs) nature of 2Ds, the fabricated
dielectric metalenses can be transferred onto different substrates, including flexible substrates, for stretching
and tunable focusing applications. Our work enables further downscaling of optical elements and opens the
door for future imaging, spectroscopy, and energy harvesting applications.

References

[1] C. H. Liu et al., Nano Lett. 17 (2017) 200-205.

[2] C. H. Liu et al., arXiv:1807.03458.

55
Jieshan Qiu
College of Chemical Engineering, Beijing University of Chemical Technology, China

qiujs@[Link]

Synthesis and Applications of Carbon Dots

Carbon atoms can bond together in different molecular configurations leading to different carbon allotropes
including diamond, fullerene, carbon nanotubes, graphene, and graphdiyne. Carbon dots (CDs), which are
generally surface-passivated carbon nanoparticles less than 10 nm in size, are other new members of carbon
allotropes. CDs were serendipitously discovered in 2004 during the electrophoresis purification of single-walled
carbon nanotubes. Similar to their popular older cousins, fullerenes, carbon nanotubes, and graphene, CDs
have drawn much attention in the past decade and have gradually become a rising star because of the
advantages of chemical inertness, high abundance, good biocompatibility, and low toxicity. Interestingly, CDs
typically display excitation-energy- and size-dependent fluorescent behavior. Depending on their structures, the
fluorescence from CDs is either attributed to the quantum-confinement effect and conjugated π-domains of the
carbogenic core (intrinsic states), or determined by the hybridization of the carbon skeleton and the connected
chemical groups (surface states). Compared with the traditional semiconductors, quantum dots, and their
organic dye counterparts, fluorescent CDs possess not only excellent optical properties and small-size effect,
but also the advantages of low-cost synthesis, good photo-bleaching resistance, tunable band gaps, and
surface functionalities. For these reasons, CDs holds promise as emergent nanolights for bio-imaging, sensing,
and optoelectronic devices. Additionally, CDs feature abundant structural defects at their surface and edges,
excellent light-harvesting capability, and photo-induced electron-transfer ability, thus facilitating their
applications in photocatalysis and energy storage and conversions. To date, remarkable progress has been
achieved in terms of synthetic approaches, properties, and applications of CDs. This review aims to classify the
different types of CDs, based on the structures of their carbogenic cores, and to describe their structural
characteristics in terms of synthesis approaches. Two well-established strategies for synthesizing CDs, the top-
down and bottom-up routes, will be highlighted. The diverse potential applications, in the bio-imaging and
diagnosis, sensing, catalysis, optoelectronics, and energy-storage fields, of CDs with different structures and
physicochemical properties, are summarized, covering the issues of surface modification, heteroatom doping,
and hybrids made by combining CDs with other species such as metals, metal oxides, and biological molecules.
The challenges and opportunities for the future development of CDs are also briefly outlined.

56
Shintaro Sato1,2
1 Fujitsu Laboratories Ltd. and 2 Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan

[Link]@[Link]

Application of Graphene and Graphene Nanoribbons to

Electronic Devices Including Ultrasensitive Gas Sensors
Graphene, two-dimensional honeycomb carbon lattice, has excellent electrical properties, and is therefore a
promising material for future electronic devices. We have been working on growth of nanocarbon materials,
including graphene and carbon nanotubes, and their application to electronic devices, such as transistors,
interconnects, and sensors. Furthermore, we recently work on bottom-up synthesis and application of graphene
nanoribbons (GNRs). We here describe our recent progress.
We recently developed a gas sensor based on a graphene-gate transistor, where the gate of a Si transistor is
replaced with monolayer graphene (Fig.1) [1]. If gas molecules adsorb on the graphene-gate surface, the Fermi
level or work function of graphene can change, thus shifting the threshold of the transistor. This causes changes
in the drain current if the gate voltage is kept constant. This graphene-gate sensor was found to be very
sensitive to NO2 and NH3. As can be seen in the Fig. 2, the sensor can detect NO2 with concentrations less than
1 ppb.
Graphene can also be utilized for high-frequency wave detection [2, 3]. We actually proposed a diode consisting
of a GNR heterojunction (Fig. 3) for such a purpose [4]. The heterojunction consists of a hydrogen-terminated
armchair-edge GNR (H-AGNR) and fluorine-terminated armchair-edge GNR (F-AGNR). Since there is a
difference in electron affinity between them, we can construct a staggered-type lateral-heterojunction p-n diode.
First principles simulations show that, due to band-to-band tunneling, the diode has a nonlinear reverse current
of the order of kA/m. The junction capacitance is extremely small due to the small junction area. The voltage
sensitivities of the GNR-based backward diode as a function of frequency are shown in Fig. 4. The diode can
have a much better sensitivity for terahertz wave than a GaAsSb/InAlAs/InGaAs heterojunction diode [5].
We try to form GNRs having various widths and edge-terminations using a bottom-up approach [6]. In fact, we
used a precursor shown in Fig. 5 (HFH-DBTA), aiming at synthesizing partially F-terminated AGNRs. The F
atoms at the edges, however, were detached during the cyclodehydrogenation of partially-edge-fluorinated
polyanthrylenes to form GNRs. We have found, by first principles calculations, that a critical intermediate
structure, obtained as a result of H atom migration to the terminal carbon of a fluorinated anthracene unit in
polyanthrylene, plays a crucial role in significantly lowering the activation energy of carbon−fluorine bond
dissociation.
Incidentally, we have found that locally aligned GNRs are obtained when we use these precursors, as shown in
Fig.6. Simulations show that this alignment is related to the relative strengths of precursor-precursor and
precursor-substrate interactions. We have also fabricated a transistor using aligned GNRs as a channel.
Transfer characteristics of the transistor are also described in the presentation.
This research was partly supported by JST CREST Grant Number JPMJCR15F1, Japan..

References

[1] N. Harada, et al., IEDM 2016 (2016) p.476..

[2] X. Cai, et al., Nat. Nanotech., 9, (2014) 814.
[3] L. Vicarelli et al., Nat. Mater., 11, (2012) 865.
[4] Harada, et al., Appl. Phys. Express, 10, 074001 (2017)
[5] M. Patrashin, et al., IEEE Trans. Electron Devices, 62 (2015) 1068.
[6] H. Hayashi, et al., ACS Nano, 11, 6204 (2017).

57
Figures

Figure 1: Schematic illustration (left) and scanning electron microscope image (right) of a gas
sensor based on a graphene-gate transistor

Figure 2: Dependence of the response (normalized

drain current, Id/Id0) of a graphene-gate sensor on Figure 3: Schemetic llustration of a diode
NO2 concentrations. using a heterojunction of F-AGNR and H-
[Link].

GaAsSb/InAlAs/InGaAs
backward diode
Figure 4: Calculated voltage sensitivity of a Figure 5: New precursor (above; HFH-DBTA)) for
GNR backward diode, βv, as a function of synthesizing a partially F-terminated AGNR (below)
frequency with the total capacitance,CT, as a
parameter. The closed circle indicates βv of a
GaAsSb/InAlAs/InGaAs diode in Ref. 5.

Figure 6: Locally-aligned AGNRs obtained from HFH-DBTA precursors.

58
Dr. Zakuan Azizi Shamsul Harumain
Dr. Rezal Khairi Ahmad
NanoMalaysia Berhad, Hampshire Place Office, Kuala Lumpur, Malaysia

zakuan@[Link]

Malaysia’s Graphene Commercialization Progress

National Graphene Action Plan 2020
NanoMalaysia’s National Graphene Action Plan 2020 is supported by the country’s 11th Malaysia Plan (2016-
2020) as a catalytic support to expedite industrial adoption of graphene applications. Realizing the economic
significance in the global market, more than 30 product development and pilot production projects have been
initiated in the form of – government-industry-academia partnerships. These graphene based products are at
the cusp of entering mainstream local and global markets.

References

Figures

Figure 1: Framework of the National Graphene Action Plan (NGAP)

59
Rune Wendelbo
Samaneh Etemadi, Siamak Eqtesadi, Blerina Gjoka, Azadeh Motealleh and
Stephanie H. Santos
Abalonyx AS, Forskningsveien 1, 0373 Oslo, Norway

rw@[Link]

Graphene Oxide Derivatives, Properties and Applications

Abstract
Graphene oxide, as prepared by the so called Hummers method1 is a solid acidic compound that can be
modified in a number of ways. It can be reduced, thermally, chemically or by light to become graphene-like rGO,
partly reduced or fully reduced, it can be functionalized to become for example organophilic and it can be doped
with N and B. The sheets can be small or large, all these variations giving rise to a family of related compounds
with different properties, suitable for different application. Our company aims at offering all these varieties of GO
to end-users, in Kg-quantities. In this process, it is essential to understand the stability or shelf-life of all these
different forms, as well as the most suitable storage conditions. In Figure 1 and 2 below we compare
dispersibility, color and X-ray diffractograms of standard graphene oxide stored for 3 months, 3 years and 6
years respectively, showing that standard GO is fairly stable for years. Now, we have undertaken a much wider
study where we store a range of derivatives under different conditions (frozen, cool and ambient). These
samples will be analysed regularly over the coming years in order to exactly define the changes that occur and
how fast.
Potential applications of graphene oxide and graphene oxide derivatives include such diverse technologies as
Load-speaker membranes, water treatment, polymer composites, protective coatings and medical. We see
several applications now being piloted around the globe.

References

[1] Hummers, William S.; Offeman, Richard E. (March 20, 1958). "Preparation of Graphitic Oxide". Journal of
the American Chemical Society. 80 (6): 1339Authors, Journal, Issue (Year) page (Arial Narrow 11)

Figures

Figure 1: XRD patterns of GO aged 6, 3 and 0.3 years Figure 2: Suspensions of GO aged 6, 3 and 0.3 years

60
61
De-Liang Bao
Hui Chen, Dongfei Wang, Yande Que, Wende Xiao, Guojian Qian, Hui Guo,
Jiatao Sun, Yu-Yang Zhang, Shixuan Du, Sokrates T. Pantelides, and Hong-Jun
Gao
Institute of Physics, Chinese Academy of Sciences, 8th Nansan St. Beijing China.

dlbao@[Link]

Fabrication of Millimeter-Scale, Single-Crystal

One-Third-Hydrogenated Graphene with
Anisotropic Electronic Properties

Periodically hydrogenated graphene is predicted to form new kinds of crystalline 2D materials such as
graphane, graphone, and 2D CxHy, which exhibit unique electronic properties. Controlled synthesis of
periodically hydrogenated graphene is needed for fundamental research and possible electronic applications.
Only small patches of such materials have been grown so far, while the experimental fabrication of large-scale,
periodically hydrogenated graphene has remained challenging. In the present work, large-scale, periodically
hydrogenated graphene is fabricated on Ru(0001). The as-fabricated hydrogenated graphene is highly ordered,
with a √3 × √3/R30° period relative to the pristine graphene. As the ratio of hydrogen and carbon is 1:3, the
periodically hydrogenated graphene is named “one-third-hydrogenated graphene” (OTHG). The area of OTHG
is up to 16 mm2. Density functional theory calculations demonstrate that the OTHG has two deformed Dirac
cones along one high-symmetry direction and a finite energy gap along the other directions at the Fermi energy,
indicating strong anisotropic electrical properties. An efficient method is thus provided to produce large-scale
crystalline functionalized graphene with specially desired properties.

References

[1] Hui Chen, De-Liang Bao, Dongfei Wang, Yande Que, Wende Xiao, Guojian Qian, Hui Guo, Jiatao Sun, Yu-Yang
Zhang, Shixuan Du, Sokrates T. Pantelides, and Hong-Jun Gao, Adv. Mater., 30 (2018) 1801838.

Figures

62
Figure 1: (a) Schematic showing the fabrication of periodically hydrogenated graphene on Ru(0001) through atomic
hydrogen chemisorption. (b) A large-scale STM image of OTHG on Ru(0001), showing the formation of hexagonal patters
(Sample bias: U = −20 mV, Tunneling current: I = 0.2 nA). (c) Zoom-in STM image of the OTHG (U = −2.0 mV; I = 1.0 nA).
The atomic model is superimposed on the STM image. (d) Calculated band structure of the OTHG, using the HSE06
hybrid functional method, showing anisotropic electronic properties. The two Dirac cones at EF along two high-symmetry
paths are indicated with red dashed rings.

63
Lihong Bao
Guocai Wang, Tengfei Pei, Ruisong Ma, Shixuan Du, Hong-Jun Gao
Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
lhbao@[Link], hjgao@[Link]

Black Phosphorus and Its Anologue: Electrical Transport

Properties and Devices
Black phosphorus (BP) has attracted great attention due to its high hole mobility, and a sizable and tunable
bandgap, meeting the basic requirements for logic circuits application. To realize a complementary logic
operation, it needs to control the conduction type in BP FETs, i.e., the dominant carrier types, holes (P-type) or
electrons (N-type). Absence of reliable substitutional doping techniques makes this task a great challenge,
however. In this talk, I will demonstrate that capping the thin BP film with a cross-linked poly-methyl-
methacrylate (PMMA) layer can modify the conductivity type of BP by a surface charge transfer process,
converting the BP layer from p-type to n-type. Combining BP films capped by cross-linked PMMA to a standard
BP, a family of planar devices can be created, including BP gated diodes (rectification ratio >10 2), BP barristors
(on/off ratio >105), and BP logic inverter (gain～0.75), which are capable of performing current rectification,
switching, and signal inversion operations. Furthermore, the conversion of a bidirectional rectifier to a polarity-
controllable transistor in black phosphorus (BP) by dual gate modulation can be realized. Employing cross-
linked PMMA as a top gate and combining it together with the global back gate of the SiO2 substrate, well-
defined unipolar transport (n- or p-type) in BP could get accessed.

References:

1. L. H. Bao, H. –J. Gao et al. Nano Letter 16, 6870 (2016).

2. L. H. Bao, H. –J. Gao et al. Adv. Electron Mater. 2, 1600292 (2016).
3. L. H. Bao, H. –J. Gao et al. 2D Mater. 4, 025056 (2017).

64
Carla Bittencourt1
Malamatenia A. Koklioti2, Xavier Noirfalise3, Izcoatl Saucedo4, Mildred Quintana4
and Nikos Tagmatarchis2
1 Universityof Mons, Mons, Belgium
2 Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, Athens, Greece
3 Materia Nova Research Center, Mons, Belgium
4 Universidad Autónoma de San Luis Potosí, San Luis Potosí, Mexico

[Link]@[Link]

Molybdenum Disulfide as Surface Enhanced Raman Scattering

Substrates for Sensing Polycyclic Aromatic Hydrocarbons
Transition metal dichalcogenides (TMDs) are at the forefront of the current research investigations of 2D
layered materials beyond graphene [1]. Various methodologies for exfoliating TMDs have already been
developed, mainly based on wet chemistry approaches allowing mass production of material suitable for basic
research and proof-of-concept studies. Recently, the potential use of TMDs as SERS platforms promoting
stable physicochemical tethering of aromatic molecules onto their surface have been announced, however, the
Raman enhancement for organic species still modest [2]. In order to improve the SERS effect, TMDs need to be
functionalized, for example by decoration with metal nanoparticles [3]. Different synthetic strategies have been
employed for the fabrication of TMD-based SERS substrates ranging from simple wet chemistry procedures to
sophisticated ones, involving micropatterning. Alternatively, oxygen and argon plasma treated MoS2 sheets
have been also examined, in which the creation of local dipoles resulted in enhanced SERS phenomena on
MoS2 surface [4]. Based on the aforementioned points, the preparation of robust sensing platforms using TMDs
still remains a daunting challenge.
Herein, we report a simple one-pot functionalization of few-layered MoS2 sheets, using nitrogen plasma
treatment and simultaneous decoration with silver nanoparticles (AgNPs). The successful surface modification
was evaluated through Raman and X-ray photoelectron spectroscopy (XPS), while transmission electron
microscopy (TEM) imaging verified the decoration with AgNPs. N-MoS2/AgNPs nanohybrids were employed as
SERS substrates to detect Rhodamine B (RhB) at very low-concentration. Charge-transfer phenomena between
RhB and N-MoS2/AgNPs, along with the polarized character of the hybrid system, causing dipole-dipole
coupling interactions, were associated to the Raman signal enhancement. Finally, considering the coordination
of aromatic moieties via π-S interactions with TMDs, we used N-MoS2/AgNPs hybrids, prepared with different
functionalization parameters, as substrate for the sensitive recognition at low levels of polycyclic aromatic
hydrocarbons. These widespread organic pollutants in the atmosphere are known to be highly carcinogen and
mutagen species [5], therefore the engineering of highly-sensitive sensors capable of in-situ detection is a key
technology for helping innovative environmental security policies. To this end we have investigated the
performance of the N-MoS2/AgNPs nanohybrids towards the detection of three hazardous aromatic
hydrocarbons: pyrene, anthracence and 2,3-dihydroxy naphthalene were investigated, observing a sensitive
detection at very low levels.
Rhodamine B (RhB), a Raman probe molecule, was selected as model analyte. For comparison, RhB was drop-
casted onto bare Si as well as onto exfoliated MoS2 (i.e. non-modified) and N-MoS2/AgNPs for Raman signal
detection. The Raman spectrum of the dye adsorbed on the Si substrate showed only a strong fluorescent
background, while the Raman spectrum of RhB deposited onto as-exfoliated MoS2 showed low intensity bands.

65
In sharp contrast, when SERS measurements were performed on N-MoS2/AgNPs high intensity bands were
observed (Fig. 1). The recorded Raman spectrum of RhB, shows distinct modes at 625 cm-1 (C–C–C ring in
plane bending), 760 cm-1 (C–H out of plane bending), 943 cm-1 (C–H stretching), 1195 cm-1 (C–H in plane
bending), 1278 cm-1 (C–O–C stretching), 1360 cm-1, 1505 cm-1, 1563 cm-1, 1648 cm-1 (aromatic C–C stretching)
and 1594 cm-1 (C=C stretching), in full agreement with previous reports [6]. Focusing on the 1648 cm-1 band,
the SERS signal was enhanced by 8 times for the 10 s nitrogen plasma silver decorated substrates compared
to the substrates functionalized only 5 s. This result emphasizes the influence of the amount of nitrogen-grafting
and silver-nanoparticles size on MoS2 in the Raman enhancement for detecting RhB. We choose the substrate
with higher enhancement factor for SERS sensing of small quantities of pyrene, anthracence and 2,3-dihydroxy
naphthalene.

Figure 1: SERS spectra (514 nm) of (a) aqueous RhB (10-5 M) on exfoliated MoS2 (black), and N-MoS2/AgNPs (blue)
substrates. b) pyrene (blue), anthracene (red) and 2,3-dihydroxy napthalene (black) at 10-5 M deposited onto N10-
MoS2/AgNPs substrate.

The Raman spectra of the studied polyaromatics are governed by strong fluorescence background, making impossible the
detection of characteristic Raman signals. However, in the recorded SERS spectrum of pyrene using N-MoS2/AgNPs as
substrate, seven distinctive modes at 407, 592, 1241, 1406, 1592, 1627, and 1643 cm-1 can be identified, while for
anthracene and 2,3-dihydroxy naphthalene bands at 752, 1006, 1183, 1402 and 1557 cm-1 and at 448, 750, 1363, 1412,
1488 and 1585 cm-1, were respectively observed. These bands can be divided into three main regions: (a) bands below
550 cm-1, which are attributed to C–C out-of-plane bending vibrations, (b) bands at 600–1000 cm-1 which are associated
with C–H out-of-plane bending and at 1000–1300 cm-1, which are related to C–H in-plane bending and rocking, and (c)
bands at 1300–1650 cm-1, which are due to aromatic C–C stretching [7]. These results testify the use of MoS2
functionalized with nitrogen and silver particles as an effective SERS platform for the sensitive detection of polycyclic
aromatic hydrocarbons. It is important to mention that the SERS detection of polycyclic aromatic hydrocarbons by other
substrates requires special modification methodologies of metal nanoparticles to ensure effective interaction between the
substrate and the analyte, as the aromatic rings exhibit low affinity for metals [8,9]. However herein, π-S interactions with
MoS2 were exploited, therefore the SERS application of functionalized TMDs as analytical, environmental and biomedical
sensors can be envisioned.

References
[1] Huang, X.; Zeng, Z.; Zhang, H., Chem. Soc. Rev., 42 (2013) 1934
[2] Ling, X.; Fang, W.; Lee, Y.-H.; Araujo, P. T.; Zhang, X.; Rodriguez-Nieva, J. F.; Lin, Y.; Zhang, J.; Kong, J.;
Dresselhaus, M. S., Nano Lett., 14 (2014) 3033
[3] Jain, P. K.; Huang, X.; El-Sayed, I. H.; El-Sayed, M. A, Plasmonics, 2 (2007) 107
[4] Sun, L.; Hu, H.; Zhan, D.; Yan, J.; Liu, L.; Teguh Jefri, S.; Yeow Edwin, K. L.; Lee Pooi, S.; Shen, Z., Small, 10
(2014)1090
[5] Conney, A. H. Cancer Res., 42 (1982) 4875
[6] Michaels, A. M.; Nirmal, M.; Brus, L. E., J. Am. Chem. Soc. 121 (1999) 9932
[7] Long, D. A. J. Raman Spectrosc., 35 (2004) 905
[8] Guerrini, L.; Garcia-Ramos, J. V.; Domingo, C.; Sanchez-Cortes, S, Anal. Chem. 81 (2009) 953
[9] Xie, Y.; Wang, X.; Han, X.; Song, W.; Ruan, W.; Liu, J.; Zhao, B.; Ozaki, Y., J. Raman Spectrosc., 42 (2010) 945

66
Hui Chen
Yande Que, Lei Tao, Dongfei Wang, Wende Xiao, Yu-Yang Zhang, Shixuan Du*,
Sokrates T. Pantelides, Hong-Jun Gao*
Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing
100190, China
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA

sxdu@[Link]; hjgao@[Link]

Recovering edge states of graphene nanoislands on Ir(111)

by silicon intercalations
It has been predicted by theory that free-standing graphene nanoribbons with zigzag edges have spin-polarized
edge states with a promise for applications [1]. However, it has been widely reported that graphene nanoislands
(GNIs) on metal substrates have no states that are localized at zigzag edges because of interaction with
substrate electrons. Here, we demonstrate that edge states of GNIs with zigzag edges on Ir(111) can be
recovered by intercalating a layer of Si atoms between GNIs and the Ir substrate. Using scanning tunneling
microscopy and spectroscopy, in combination with density functional theory calculations, we show that GNIs are
effectively decoupled from the Ir substrate by the intercalated Si layer, leading to the recovery of edge states
that were originally suppressed by graphene-substrate interaction. We also find that edge states gradually shift
to the Fermi level with increasing lateral sizes of the GNIs. In addition, theoretical calculations show that edge
states of some irregular GNIs are spin-polarized, which suggests an avenue for construction of graphene-based
spintronic devices.
.

References

[1] P. Ruffieux et al. Nature 531 (2016), 489–492

[2] Y. Li. et al. Adv. Mater. 25 (2013), 1967–1972
[3] H. Chen et al. Nano Research 11 (2018), 3722

Figures

Figure 1: Appearance of edge states on the zigzag edge of GNI after Si intercalation. Right panel: The energy of the edge
states versus lateral size of GNIs for both theoretical and experimental results

67
Zhaolong Chen
Zhongfan Liu
College of Chemistry and Molecular Engineering, Beijing, 100871, China
chenzl-cnc@[Link]

High Brightness Blue/UV Light-Emitting Diodes Enabled by

Directly Grown Graphene Buffer Layer
Single-crystalline group-III nitrides (III-Ns, i.e. GaN, AlN) based light-emitting diodes (LEDs) with high-efficiency
and long lifetime are the most promising solid-state lighting source compared with conventional incandescent
and fluorescent lamps.[1] However, the lattice and thermal mismatch between III-Ns and sapphire substrate
always induce high stress and high density of dislocations and thus degrade the performance of LEDs. [2] Here,
we report the growth of high-quality III-Ns films with low-stress and low density of dislocations on graphene (Gr)
buffered sapphire substrate for high-performance LEDs. Gr films are directly grown on sapphire substrate to
avoid the tedious transfer process and III-Ns is grown by metal-organic chemical vapor deposition (MOCVD).
The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in III-Ns
film and multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light
output power compared to that on bare sapphire substrate, which even outperforms the mature process derived
counterpart. The III-Ns growth on Gr buffered sapphire only requires one-step growth, which largely shortens
the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several
disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs.

References

[1] Kim, Y. et al. Nature 544 (2017), 340–343.

[2] Chen, Z. L. & Liu, Z. F. et al. Adv. Mater., 30 (2018), 1801608.

Figures

Figure 1: The structure of LEDs grown on Gr/sapphire substrates.

68
Zongping Chen
School of Materials Science and Engineering, Zhejiang University
38 Zheda Road, Hangzhou 310027, China

chenzp@[Link]

Precision synthesis of structurally deﬁned graphene

nanoribbons by chemical vapor deposition
Graphene nanoribbons (GNRs), quasi-one-dimensional narrow strips of graphene, have shown great promise
for use as advanced semiconductors in electronics. Compared with the lack of structural control in GNRs
fabricated by “top-down” approaches, atomically precise GNRs can be “bottom-up” synthesized by surface-
assisted assembly of molecular building blocks1. Such “bottom-up” synthesized ultranarrow (~1-2 nm) GNRs
have demonstrated a wide range of bandgaps with visible to near-infrared absorption, rendering them highly
interesting for a broad range of applications in next-generation transistors, as well as optoelectronic and
photonic devices.
To establish facile and scalable on-surface synthesis of GNRs for real device applications, we demonstrate here
an efﬁcient chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally
defined GNRs over large areas even under ambient-pressure conditions. This “bottom-up” CVD method allows
the growth of chevron-type GNRs2, armchair GNRs with various width3, N-doped GNRs as well as their
heterojunctions, demonstrating the versatility and scalability of this process, which provides access to a broad
class of GNRs with engineered structures and properties based on molecular-scale design. Moreover, with the
CVD method, we have also recently demonstrated the highly efficient lateral fusion of armchair GNRs into wider
GNRs, under the CVD growth at higher temperature4. The large-area availability of the CVD-synthesized GNR
films enabled also the device integration and studies1. The FET devices built on the transferred GNRs exhibited
a high current on/off ratio of >6000, and a high photoresponsivity of ~105 A/W for small incident power in the
visible-UV range, which is 8 orders of magnitude higher than the devices based on graphene. These results
pave the way toward the scalable and controllable growth of GNRs, and provide practical solutions to the
current challenges in graphene-based nanoelectronic, optoelectronic and photonic devices.

References

[1] Talirz, L., Ruffieux, P. & Fasel, R. On-surface synthesis of atomically precise graphene nanoribbons. Adv. Mater. 28,
6222-6231 (2016).
[2] Chen, Z. et al. Synthesis of graphene nanoribbons by ambient-pressure chemical vapor deposition and device
integration. J. Am. Chem. Soc. 138, 15488-15496 (2016).
[3] Chen, Z. et al. Chemical vapor deposition synthesis and terahertz photoconductivity of low-bandgap n = 9 armchair
graphene nanoribbons. J. Am. Chem. Soc. 139, 3635-3638 (2017).
[4] Chen, Z. et al. Lateral fusion of chemical vapor deposited n = 5 armchair graphene nanoribbons. J. Am. Chem. Soc.
139, 9483-9486 (2017).

69
Mustafa Eginligil
Nanjing Tech University, 5 Xinmofan Rd., Nanjing, China

iameginligil@[Link]

Circular Photogalvanic Photocurrents in 2D Materials

Helicity dependent photocurrent (PC) is the electric current generated by elliptically polarized light incident on to
sample plane. For the circular polarized light absorption, based on particular directions of optical field and the
point group symmetries of the material, this PC can be mainly due to the circular photogalvanic effect (CPGE).
The PC due to the CPGE has been studied in detail for III-V and II-VI semiconductor quantum wells as one kind
of spin PCs in those materials. Recently, the CPGE current in 2D materials has attracted attention and been
observed for oblique incidence and excitation perpendicular to the direction of current. Here first we provide a
review about the CPGE current in 2D materials, starting with observation in graphene which has weak spin orbit
coupling. The microscopic origin of the CPGE current in graphene is due to the quantum interference between
Drude transitions and indirect intraband transition with intermediate states [1]. Then we demonstrate that in
single layer graphene (1LG), bilayer graphene (2LG) [2], the carrier density dependence of the CPGE current
follows the Fermi-Dirac distribution, as expected. Unlike 1LG, 2LG, and ABA stacked 3LG cases, the large
enhancement of the CPGE current in ABC stacked 3LG is attributed to the coexistence of band gap opening
and restored inversion symmetry [3]. On the other hand, monolayer transition metal dichalcogenide
semiconductors, such as MoS2, have a large direct band gap in their K valley, broken inversion symmetry and
strong spin orbit coupling. They also exhibit CPGE current as a result of giant spin-valley coupling which can be
controlled by circularly polarized light and global back-gating. A large CPGE current polarization was observed
for excitation on –resonance with exciton, which is negligible for off-resonance excitation [4]. Also a large on-off
ratio of CPGE current as a function of carrier density was reported [5]. We also discuss the modulation of the
CPGE current in monolayer MoS2 upon doping with magnetic elements.

References

[1] Jiang C. et al. Physical Review B, 84 (2011) 125429.

[2] Qian X. et al. Semiconductor Science and Technology, (2018) just accepted.
[3] Cao B. Et al. European Graphene Forum proceedings, (2017).
[4] Eginligil et al. Nature Communications, 6 (2015) 7636.
[5] Liu L. et al. Bulletin of American Physical Society, (2017) [Link].B33.4

70
Samaneh Etemadi
Siamak Eqtesadi, Blerina Gjoka, Azadeh Motealleh and Stephanie H. Santos,
Rune Wendelbo
Abalonyx AS, Forskningsveien 1, 0373 Oslo, Norway

Samaneh.e@[Link]

Graphene Oxide acidity modifications

Graphene oxide (GO) as prepared by the “Hummers method”1 is a solid acid with up to 2 mmol acid sites per
gram. The acid sites are of various nature, but mostly carboxylic and hydroxylic groups (Fig.1). GO and GO-
derivatives have been reported to have potential for a range of applications, such as corrosion protection, water
treatment, composites, lubricants, energy storage, photo-catalysts, sensors, sports equipment, elastomers and
load speaker membranes. For some of these applications, pH adjustment can be needed. In this study, we
review how acidity can be adjusted by washing and by neutralization with bases, and how this affects
fundamentally important properties such as dispersibility. Titration curves for “standard” GO and “water washed”
GO are shown in Fig. 2, the standard GO having about 1.4 mmol acid sites per gram and the water washed GO
having about 0.4 mmol acid sites per gram. From an industrial perspective, concerns, apart from relevant
chemistry are costs, availability and hazards. Costs will inevitably come down with increased production
volumes, to as little as 2 - 3 % of today’s price, according to our estimates. The keys to cost reduction are
economy of scale and automation.

References

1. Hummers, William S.; Offeman, Richard E. (March 20, 1958). "Preparation of Graphitic Oxide". Journal of
the American Chemical Society. 80 (6): 1339.

Figures

Figure 1: Schematic illustration of functional groups on GO. Figure 2: Titration curves for as produced GO compared
to water-washed GO, 0.025 % dispersions
titrated with NaOH.

71
Fengxia Geng
Tatsumasa Hoshide, Zhiqiang Wang, Weihong Liu, Takayoshi Sasaki
Soochow University, 199 Renai Road, Suzhou, China.

Contact: gengfx@[Link]

Novel Inorganic Layered Materials: From Interlayer Chemistry,

Delamination, toward Energy Storage Applications
Molecularly thin two-dimensional (2D) nanomaterials, such as graphene and other inorganic analogues,
delaminated from the corresponding three-dimensional counterparts with lamellar structures, are emerging as
one of the most prevalent materials for their superior properties in diverse applications. The delamination arises
from the unique structural characteristics of the layered parent precursor, that is, strong covalent bonding in the
layers while weak van der Waals or electrostatic attractions between layers, resulting in easy interlayer
expansions and even delaminations. In this talk, I will start by our study on how layered materials swell and
what controls the reactions, which is critical to producing high-quality sheet materials.[1-2] It was found that the
swelling behavior was regulated by the acid-base reaction and the osmotic pressure equilibrium, which are both
substantially unselective and only molarity dependent. However, the nature of the intercalated ion was critical to
the stability of the resulting swollen structure; that is, ions of higher polarity and smaller size help stabilize the
highly expanded structure, while ions of low polarity and larger size readily lead to exfoliation. With the swelling
and delamination rules, I will then move onto producing new 2D sheets, for example, titanium carbides covered
with Al oxoanions showing strong optical absorption, particularly at near-infrared region.[3-5] Traditional
methods in fabricating 2D MXene materials inevitably use highly noxious and strongly corrosive acid. Utilizing
the amphoteric nature of interlayer Al and taking an organic base as the etchant, simultaneous surface
functionalization by the hydrolyzed Al(OH)4- and intercalation of bulky ion into the gallery space was achieved,
readily producing monolayer Ti3C2 sheets. Finally, the nanosheets were assembled into macroscopic structure
directed to energy storage applications.[6-8] Employing the two-dimensional sheet form of titanium oxide, for the
first time macroscopic fiber of titanium oxides was developed through a scalable wet-spinning process. Despite
of the intrinsically weak Ti-O bond in molecular titania sheets, the optimal fiber manifested mechanical
performance comparable to that documented for pristine fiber of graphene or carbon nanotubes, which should
be credited to the highly-aligned stacking manner and enhanced sheet-to-sheet binding interactions. By a
further in situ conformal hybridization with reduced graphene oxide, serving as efficient current collectors, a
novel fiber electrode was obtained displaying excellent mechanical properties combined with favorable
electrochemical performance in lithium-ion battery. Importantly, the storing capacities per unit length were
especially competitive, considering the high linear densities of active materials as well as their close contact
with current collectors, for which the powering period of an LED light could be extended from several seconds
only up to >5 h.

References

[1] F. X. Geng, R. Z. Ma, A. Nakamura, K. Akatsuka, Y. Ebina, Y. Yamauchi, N. Miyamoto, Y. Tateyama, T. Sasaki,
Nat. Commun., 4 (2013) 1632.
[2] F. X. Geng, R. Z. Ma, Y. Ebina, Y. Yamauchi, N. Miyamoto, T. Sasaki, J. Am. Chem. Soc., 14 (2014), 5491.
[3] J. N. Xuan, Z. Q. Wang, Y. Y. Chen, D. J. Liang, L. Cheng, X. J. Yang, Z. Liu, R. Z. Ma, T. Sasaki, F. X. Geng,
Angew. Chem. Int. Ed., 47 (2016) 14569.
[4] [W. H. Liu, Z. Q. Wang, Y. L. Su, Q. W. Li, Z. G. Zhao, F. X. Geng, Adv. Energy Mater. 22 (2017) 1602834.
[5] Z. Q. Wang, J. N. Xuan, Z. G. Zhao, Q. W. Li, F. X. Geng, ACS Nano 11 (2017) 11559.
[6] T. Hoshide, Y. C. Zheng, J. Y. Hou, Z. Q. Wang, Q. W. Li, Z. G. Zhao, R. Z. Ma, T. Sasaki, F. X. Geng, Nano
Lett., 6 (2017) 3543.

72
[7] J. Y. Hou, Y. C. Zheng, Y. L. Su, W. K. Zhang, T. Hoshide, F. F. Xia, J. S. Jie, Q. W. Li, Z. G. Zhao, R. Z. Ma, T.
Sasaki, F. X. Geng, J. Am. Chem. Soc., 40 (2015) 13200.
[8] N. Liu, Z. Q. Wang, Z. Wang, J. S. Xia, Y. Chen, Z. G. Zhao, Q. W. Li, F. X. Geng, ACS Nano 8 (2017) 7879.

Figures

Figure 1: Delamination process of a layered structure.

73
Mohan Kumar Ghimire
Hamza Zad Gul, Hojoon Yi, Dang Xuan Dang, Wonkil Sakong, Nguyen Van Luan,
Hyun Jin Ji
Sungkyunkwan University, Gyeonggi do, Suwon, South korea

ghimiremohankumar@[Link]

Graphene-CdSe quantum dot hybrid as a platform for the

control of carrier temperature

In a graphene and quantum dots (QDs) hybrid structure, the graphene is known to play the role of an electrode
that conducts the photoexcited carriers from the QDs to the electrodes. Thus, the yield of photocurrent of the
QD ensemble is greatly enhanced [1]. However, in our study, the graphene provides a platform to control the
energy relaxation of optically excited carriers from QDs. Thus, the temperature of photocarriers of QDs is
controllable. Due to the moderate carrier temperature, the observed photocurrent from the hybrid structure
reveals a photothermoelectric effect, which becomes even stronger when the Fermi energy, E F, is located near
the charge neutrality point (CNP) of the graphene. However, the photothermoelectric behavior weakens with
increased EF. Such a behavior originates from the varying electron-phonon coupling strength that is dependent
upon EF of the graphene [2].

References

[1] S.H. Cheng, T.M. Weng, M.L. Lu, W.C. Tan, J.Y. Chen, Y.F. Chen, Nat. Sci. Rep.3 (2013) 2694.
[2] M.K. Ghimire, H.Z. Gul, H. Yi, D.X. Dang, W. Sakong, N.V. Luan, H.J. Ji, S. C. Lim, FlatChem 6 (2017) 77-82.

Figures

Figure 1: Schematic diagram showing light shining on graphene-CdSe QD hybrid FET

74
Hao-Lin Hsu1
Chung-Yih Kuo2, Jean-Hong Chen1, 4*, Jih-Mirn Jehng3, Kai-Ying Liang4,
Ren-Long Zhang4 and Tian-Yi Zhou4
1 Green Energy Technology Research Center, Kun Shan University, Tainan, Taiwan, R.O.C.
2 Health Technology Center, Chung Shan Medical University, Taichung, Taiwan, R.O.C.
3 Department of Chemical Engineering, National Chung Hsing University, Taichung, Taiwan, R. O. C.
4 Department of Material Engineering, Kun Shan University, Tainan, Taiwan, R.O.C.

diago661228@[Link] or kelvench@[Link]

Application of Carbon Aerogel in the Adsorption of Polycyclic

Aromatic Compounds from Diesel Exhaust
Graphene-based materials, such as graphene oxide (GO) [1], reduced graphene oxide [2] and carbon aerogel
(CA) [3], have attracted worldwide attention in recent years because of their outstanding properties. Graphene
exhibits excellent physical and chemical properties and can be easily modified [4]. Graphene and graphite
oxide materials exhibit excellent performance in adsorption with polycyclic aromatic hydrocarbons (PAHs) and
their derivatives [5, 6]. In Taiwan, the number of car and motor vehicles has been progressively increasing.
Moreover, the exhaust gases emitted by vehicles often contains many pollutants, including metal elements,
suspended particular matter, volatile organic pollutants and PAHs etc [7]. Vehicular emissions of particulate and
gas-phase PAHs are of particular interest because of their potentially toxic and probable human carcinogenic
compounds [8]. Furthermore, rapid vehicular growth rate has increased vehicular emissions, which have
become one of the principle anthropogenic sources of PAHs. Polyurethane foam (PUF) and commercial XAD
polymer resin are the adsorbents announced by the EPA. In this study, we present reusable and efficient
carbon aerogel (CA) adsorbent for particulate and gas-phase PAHs emitted from diesel vehicles. We
demonstrate that CA material is highly adsorption efficiency for human carcinogenic compounds. Because of
superior adsorption capacity of PAHs, CA is possible to be the excellent environmental and air pollution
adsorbent material in the future。

References

[1] D. C. Marcano et. al, ACS Nano 4, (2010) 4806.

[2] H. He et. al, Chem. Mater. 22, (2010) 5054.
[3] W. Wan et. al, Environ. Sci.: Nano 3, (2016) 107.
[4] A. K. Geim, Science 324, (2009) 1530.
[5] L. Li et. al, J. Environ. Qual. 42, (2013) 191.
[6] J. Wang et. al, Environ. Sci. Technol. 48, (2014) 4817.
[7] S. Chang et. al, J. Environ. Sci. Health C 27, (2009) 141.
[8] C. Kuo et. al, Environ. Geochem Health 34, (2012) 77.

75
Zhirun Hu
Ting Leng, Kewen Pan and Zhirun Hu
School of Electrical and Electronic Engineering, University of Manchester, Manchester, M13 9PL, UK

[Link]@[Link]

Printed Graphene For Chipless RFID Applications

Abstract

This paper presents screen printed graphene for chipless RFID applications. The highly conductive ink consists
of multi-layer graphene nanoflakes and has been formulated specially for screen printing printed electronics.
The frequency selective surfaces (FSS) periodic arrays are screen-printed on normal paper and attached onto
FR4 for measurement. The measurement results show that the simple structure can encode 2 bits, indicating
that screen printed graphene can be a viable solution to low-cost chipless RFID applications. In recent years,
researchers have been trying to develop chipless RFID tags, often involving not printable patterns and complex
decoding mechanisms [1]. The costs of the tags are mainly dependent on the cost of the IC chips as the mass
production of transponder antennas is relatively cheaper. Additionally, the assembling implementation
processes of the chips onto the tag antennas and the additional transportation add more cost down the
production line. Hence, efforts have been put in developing chipless RFID tags without ICs, which means that
the main cost of the tag can be removed.
The tagging of extremely low cost paper/plastic based items demands a fully passive and printable chipless tag
as a low-cost, robust solution for simple applications. The primary potential benefit of the chipless tags is their
capability to be directly printed on inventory items for a lower cost, providing a good alternative for traditional
RFID tags with IC chips. For many applications, such as small business company applications and identifying
classes of objects, a large ID string is not necessary.

The screen printed graphene technique has been reported in [2-4]. Different to antennas, printed graphene FSS
arrays for chipless RFID applications are presented in this work. Frequency selective surfaces (FSS) are
periodic structures that function as filters for microwave frequency waves. The resonating nature of these
periodic structures at specific frequencies has been used as frequency selective filters and electromagnetic
interference (EMI) shielding applications. Each data bit can be associated with the presence or absence of a
resonant peak at a predetermined frequency in the spectrum by adding or reducing the resonating structures
[5]. These tags have the advantage of extremely low fabrication costs benefiting from printed graphene
technology and the chipless structure. The periodic FSS structure consists of concentric rings of different radius
as multiple resonances are created. The ring structure has the advantage of its small length in terms of
wavelength [6]. For the circular element, its length should be a multiple of half wavelength for resonance [7].
The resonance frequency is a function of the equivalent inductance L eq and equivalent capacitance Ceq of the
concentric rings. It should be noted that Leq and Ceq are related to the radii and width of the rings, and the
distance between the rings [8]. The structure of the samples prepared are shown in Fig.1(a). The sizes of the
concentric rings are chosen to respond to the measurement range 2.6 to 3.95 GHz. Fig. 2(b) shows the
Scanning Electron Microscope(SEM( image of the highly conductive printed graphene sample, showing the
compact structure after compression.

A pair of identical standard gain horn antennas (2.95 – 3.95 GHz) are connected to measure the
transmission(%) from antenna 1 to antenna 2 using a vector network analyzer (VNA), (FieldFox N9918A). A
TRL (Thru-Reflect-Line) calibration was made for the cables to ensure the accuracy of the measurement. The
measurement was first made without the printed graphene sample (DUT, device under test), then the DUT was
pasted onto FR4 board (thickness:1.6 mm) to measure the transmission coefficients. When DUTs is absent, the

76
transmission is firstly measured from 2 to 5 GHz. This data is saved as reference. The measured transmission
from antenna 1 to antenna 2 for different configurations then are normalized using the reference data to extract
the response when the DUT is present. Fig. 1(c) shows the calculated transmission for different configurations.
It can be seen that when the ring responsible for bit 1 is present, a resonance peak appears, same as the bit 2
ring, revealing the data bits can be encoded by adding or reducing the resonating structures. A 70%
transmission can serve as a guidance line to observe the resonance as shown in Fig.1(c).
However, the resonant peak for bit 2 is relatively low due to the thin printed ring. The prepared sample’s sheet
resistance is measured to be 3 Ohms/sq. The small ring’s resistivity is too high to resonate hence the lower
resonant peak. This should be further addressed in future designs.

These results have proven that the screen printed graphene can provide bit encoding by its printed periodic
structures. This is useful for chipless RFID applications in small business.

References
[1] K. Finkenzeller and D. Müller, RFID handbook. Chichester: Wiley, 2012.
[2] X. Huang, T. Leng, X. Zhang, J. Chen, K. Chang, A. Geim, K. Novoselov and Z. Hu, 'Binder-free highly
conductive graphene laminate for low cost printed radio frequency applications', Appl. Phys. Lett., vol. 106, no.
20, p. 203105, 2015.
[3] T. Leng, X. Huang, K. Chang, J. Chen, M. Abdalla and Z. Hu, "Graphene Nanoflakes Printed Flexible
Meandered-Line Dipole Antenna on Paper Substrate for Low-Cost RFID and Sensing Applications", IEEE
Antennas and Wireless Propagation Letters, vol. 15, pp. 1565-1568, 2016.
[4] X. Huang, T. Leng, K. Chang, J. Chen, K. Novoselov and Z. Hu, "Graphene radio frequency and microwave
passive components for low cost wearable electronics", 2D Materials, vol. 3, no. 2, p. 025021, 2016.
[5] F. Costa, S. Genovesi and A. Monorchio, "A Chipless RFID Based on Multiresonant High-Impedance
Surfaces", IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 1, pp. 146-153, 2013.
[6] B. Munk, Frequency Selective Surfaces. Hoboken: John Wiley & Sons, 2005.
[7] J. Huang, Te-Kao Wu and Shung-Wu Lee, "Tri-band frequency selective surface with circular ring
elements", IEEE Transactions on Antennas and Propagation, vol. 42, no. 2, pp. 166-175, 1994.
[8] S. Can, E. Karakaya, F. Bagcı, A. Yilmaz and B. Akaoglu, "Dual-Band Double-Cylindrical-Ring 3D
Frequency Selective Surface", ETRI Journal, vol. 39, no. 1, pp. 69-75, 2017.

Figures

Figure 1: Printed Graphene For Chipless RFID Applications (a) Prepared screen printed graphene chipless RFID
prototype tag (b) SEM image of the compact surface of highly conductive printed graphene sample (c) Measured
transmission (%) from antenna 1 to antenna 2 for different configurations.

77
Dr Shanshan Huo – Senior Project Engineer
Andrew Wilkinson - CEO
Graphene Enabled Systems, Core Technology Facility, 46 Grafton Street, Manchester, M13 9NT, UK

[Link]@[Link]

A New Model for Accelerating the Commercialisation of

Graphene and other 2D Materials Research from Universities
A vital stage in the adoption of a new material or technology is the creation of small entrepreneurial start-up
businesses which are able to translate academic research into commercial products. To facilitate and drive the
creation of these spin-out businesses and joint venture partnerships, The University of Manchester in the UK
has set up a wholly owned subsidiary, Graphene Enabled Systems Ltd (GES). This organisation acts a
facilitator - identifying and pre-qualifying deal opportunities, manufacturing high quality product demonstrators
and putting together business plans for the potential spin-outs or joint-ventures.

Identifying and Evaluating Opportunities

GES has a process for identifying and evaluating new project ideas.
In the first part of the process new opportunities enter the ‘funnel’ from a variety of internal and external
sources.

These ideas are then evaluated and empirically scored based on their commercial viability, competitive
advantages, technical/operational feasibility and the strength of the University’s IPs.

If an opportunity is considered suitable for a short to medium commercial exploitation and is potentially
attractive to investors they enter a highly structured new product development(NPD) process.

As with any NPD process, when a project arrives at a specific ‘mile-stone’ or a gate it is formally reviewed and
will not receive additional resource unless it has met the minimum criteria to move to the next stage of the
development process.

This formal evaluation and gating process limits risks and increases the chance of a spin-out or joint venture
being commercially and financially successful. GES regularly reviews the status of each project, highlighting any
areas of concern that may result in a project being i) abandoned ii) recycled iii) delayed.

Outputs to Create Economic Impact

Projects that have been successfully passed through the GES evaluation and NPD process will have the
following outputs:
• Comprehensive Business Plan – This will be structured in such a way to ensure the opportunity has
undergone a process of due diligence.
• High-Quality Product Demonstrators – These will be designed and built to show the commercial viability
of the technology and how it can be industrialised. These demonstrators (not prototypes) are invaluable tools for
attracting commercial interest.
• Short Investment Prospectus – Key synthetic elements from the business plan and a description of the
investment opportunity.

Graphene Enabled Systems is now successfully applying this model in the UK and is exploring how to
collaborate with other Universities and industrial partners to proliferate this simple but effective model.

Spin-outs

78
Atomic Mechanics Ltd – Design, develop, manufacture and sale of a range of proprietary pressure sensors and
human machine touch interfaces based on graphene-polymer membranes.
Grafine Ltd – Provide scientific and technical consultancy services to the multi-billion pound global elastomer
industry.
Graphene Water Technologies Ltd – Develop a range of new, graphene enhanced membranes to clean polluted
water and brines.
Laser Graphene Ltd – Manufacture equipment that will enable the ‘Laser Direct Writing’ of conductive tracks on
low temperature substrates.
Riptron Ltd – Develop graphene based sensors to measure low concentrations of VOCs.

Figure 1: Flow Chart of Technology Commercialization Process

79
Chengli Jiao
Fangfang Yang, Heqing Jiang
Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, China

jiaocl@[Link]

Induced Assembly of Two-Dimensional Metal–Organic

Framework Nanosheets for Gas Separation
Metal–organic framework nanosheets (MONs), a new category of two-dimensional material composed of
organic ligands and metal ions or clusters,[1] have been considered as promising adsorbents and membranes
for gas separation because of their structural diversity, extremely low mass-transfer barrier and precise
molecule-size recognition.[2] However, the mechanical strength and stability hinder the development of MONs-
based adsorbents and membranes.[3] Recently, we developed induced assembly strategy to fabricate MONs
based composite adsorbents and composite membranes.[4] Supports or fillers with functional groups (-OH, -
COOH) are adopted, these functional groups act as nucleation or anchor sites for the growth or assembly of
MONs. Taking advantage of the intimate interaction between MONs and the support or filler, metal organic
framework (MOF) nanosheets confined in supports and continuous two-dimensional MOF composite
membranes with enhanced performance and mechanical strength can be obtained. MOF nanosheet within the
support exhibits an enhanced CO2 adsorption capacity, which is 4 times higher than that of bulk MOF at 150
mbar and 273 K. Compare to parent unselective MONs membrane, GO/MONs membrane displays a
remarkable H2/CO2 separation performance, with a superior H2 permeance of 1.1×10-6 mol m-2 s-1 Pa-1 and an
ideal separation selectivity of 96.5.

References

[1] M. Zhao; Y. Huang; Y. Peng; Z. Huang; Q. Ma; H. Zhang, Chem. Soc. Rev., 47 (2018), 6267-6295.
[2] Y. Peng; Y. Li; Y. Ban; H. Jin; W. Jiao; X. Liu; W. Yang, Science, 346 (2014), 1356-1359.
[3] L. Prozorovska; P. R. Kidambi, Adv. Mater. (Deerfield Beach, Fla.) 2018, e1801179-e1801179.
[4] C. L. Jiao; Z. Majeed; G.-H. Wang; H. Q. Jiang, J Mater. Chem. A 2018, 6, 17220-17226.

Figures

Figure 1: Scheme for the fabrication of: a) MOF nanosheets confined in porous support; b) MON (CuBDC)-GO composite
membranes.

80
Jong Min Kim
Joon Soo Kim, Dong Hwan Jung, Ju Hwan Kim, Sung Kim, Suk-Ho Choi
Department of Applied Physics and institute of Natural Sciences, Kyung Hee University, Yongin 17104, Korea

sukho@[Link]

Use of Doped-Graphene Transparent Conductive Electrodes

for High-Performance Si-Quantum-Dots-Based Solar Cells
Recently, various kinds of graphene/semiconductor heterojunction devices have been intensively studied due
to the outstanding properties of graphene such as perfect transparency, high carrier mobility, and easy
adjustment of the Fermi level by doping [1]. Even though Si is a principal material in semiconductor industries, it
is of limited use in optoelectronic device applications because of the small- and indirect-bandgap nature [2]. To
overcome this problem, Si quantum dots (SQDs) have been employed in optoelectronic devices based on
quantum confinement effect [3]. Here, we employ doped-graphene transparent conductive electrodes (TCEs)
for SQDs-based solar cells. Three kinds of dopants such as gold (III) chloride (AuCl3), silver nanowires (Ag
NWs), and bis(trifluoromethane sulfonyl)–amide (TFSA) are employed for efficient collection of the carriers
photo-induced in SQDs. The TFSA-doped graphene TCE/SQDs solar cells show maximum power conversion
efficiency (PCE) of 16.61%, much larger than ever achieved in their counterparts with metal TCEs. In particular,
the long-term stabilities of the solar cells are remarkably improved by using TFSA for the graphene TCEs. After
700 h, the solar cells show 3.05/18.57/10.84% degradation from their initial PCEs for the TFSA/Ag NWs/AuCl3-
doped graphene TCEs, respectively. These results are very promising for the applications of the doped
graphene TCE/SQDs heterojunctions in optoelectronic devices.

References

[1] X. An, F. Liu, Y. J. Jung, and S. Kar, Nano Lett., 3 (2013) 909-916
[2] L. Pavesi, L. D. Negro, C. Mazzoleni, G. Franzò, and F. Priolo, Nature, 6811 (2000) 440-444
[3] E.-C. Cho, S. Park, X. Hao, D. Song, G. Conibeer, S.-C. Park, and M. A Green, Nanotechnology, 24 (2008)
245201

Figures
Pristine 100
0
Current density (mA/cm )

(13.52)
2

Normalized PCE (%)

TFSA-graphene
-10 (16.6 %) 90
AuCl3-graphene
Pristine
-20 (12.13 %) 80
TFSA-graphene
Ag NWs-graphene AuCl3-graphene
(16.17 %) 70
-30 Ag NWs-graphene

-40 60
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 600 700
Voltage (V) Time (h)

Figure 1: Photo J-V curves and long-term stabilites of the solar cells with TFSA/Ag NWs/Au Cl3-doped-graphene TCEs.
Here, PCEs are indicated.

81
Scheyla Kuester1,2
Rafael S. Kurusu1,2, Emna Helal1,2, Giovanna Gutierrez2, Nima Moghimian2, Éric
David1, Nicole R. Demarquette1
1École de technologie supérieure,1100 Notre-Dame St W, QC H3C 1K3, Montreal, Canada
2NanoXplore Inc., 25 Montpellier Blvd, QC H4N 2G3, Montreal, Canada

scheylakuester@[Link]

Electrical properties and electromagnetic shielding

effectiveness of polycarbonate/acrylonitrile butadiene
styrene/graphene nanoplatelets nanocomposites
In the current information age, the miniaturization of electronic systems and all the technical requirements for
high technological applications are amplifying the complexity of developing electromagnetic interference (EMI)
shielding materials for fully complying with electromagnetic compatibility (EMC) regulations [1, 2]. From an
industrial perspective, the main challenge concerns the development of light cost-effective materials while
combining other critical parameters such as easy processing, mechanical requirements, and esthetic factors.
Electrically conductive polymer composites based on insulating polymer matrices and carbon particles have
been shown to be the most promising materials for EMI shielding applications. Further, graphene-enhanced
thermoplastics are showing to be more effective than the traditional carbon particles, such as carbon black and
graphite [3].
In the present work, nanocomposites based on polycarbonate (PC), acrylonitrile butadiene styrene, and
PC/ABS with different weight loadings of graphene nanoplatelets (GnP) were prepared in a twin screw extruder
followed by compression molding for EMI shielding applications at NanoXplore Inc. As an attempt to improve
the EMI shielding effectiveness (EMI-SE) with lower amounts of GnP, PC/ABS/GnP blends of 5 different
morphologies with GnP content ≈ 15wt% were designed. The effect of the blend’s morphology and,
consequently, the distribution of GnP networks of different configurations on the electrical and EMI shielding
properties were evaluated. Figure 1 shows a schematic representation of the 5 different blends.

Figure 1: PC/ABS/GnP blends of different morphologies with ≈ 15wt% GnP loading. Blend 1: PC/ABS blend (70 wt%
wt%/30 wt%) prepared from PC/20 wt% GnP and ABS/5 wt% GnP, Blend 2: PC/ABS blend (50wt%/50 wt%) prepared
from PC/15 wt% GnP and ABS/15 wt% GnP, Blend 3: PC/ABS blend (30wt%/70 wt%) prepared from PC/5 wt% GnP and
ABS/20 wt% GnP, Blend 4: PC/ABS blend (70 wt% wt%/30 wt%) prepared from PC/5 wt% GnP and ABS/33 wt% GnP,
Blend 5: PC/ABS blend (50wt%/50 wt%) prepared from PC/0 wt% GnP and ABS/33 wt% GnP.

82
All 5 PC/ABS/GnP blends presented similar values of electrical conductivity which was very close to the one of
ABS/GnP and PC/GnP nanocomposites with similar GnP concentration (≈ 5E-2 and 2E-1 S.m-1 for the
compositions with 15 and 20wt% GnP loading, respectively). This behavior can be explained considering that at
this concentration of GnP, the conductivity values are already in the plateau of conductivity after the electrical
percolation threshold, and therefore the measurement is insensitive to changes regarding the morphology of the
blends [3].
The EMI shielding properties were calculated from experimental data using suitable equations that can be found
elsewhere [1, 4]. Figure 2 presents the EMI-SE of the different nanocomposites as a function of frequency.

(a) (b)

Figure 2: EMI-SE as a function of frequency of the a) PC/GnP and ABS/GnP nanocomposites and b) PC/ABS/GnP
blends (≈ 2.5 mm thick)

As shown in the figure, PC/GnP presented higher EMI-SE than ABS/GnP. This result was already expected
considering that PC has higher affinity with GnP than ABS according to thermodynamic predictions [5]. Further,
differently than the results of electrical conductivity, the PC/ABS/GnP blends presented higher values of EMI-SE
compared to the PC/GnP and ABS/GnP nanocomposites. For the PC/ABS (70 wt%/30 wt%) blends 1 and 4,
where PC phase is continuous and the ABS phase is in form of droplets (with ≈ 15 wt% GnP loading), the EMI-
SE of the blends were higher than the EMI-SE of PC/GnP and ABS/GnP nanocomposites with 20 wt% of GnP
loading. These results can be explained considering the geometrical arrangement of the blends evaluated by
rheological characterization (data not shown), where the domains of PC formed a close-packed conductive
network (blend 1) and favored the formation of a highly GnP loading droplets network (blend 4) to interact with
the electromagnetic radiation. Additionally, preliminary mechanical characterization (ongoing) showed a
considerable increase of the mechanical properties of the PC/ABS/GnP blends compared to the PC/GnP
nanocomposites.
As conclusion, it was possible to enhance the EMI-SE of the final material by controlling the morphology of the
blends. PC/ABS/GnP blends of continuous PC phase showed to be potential candidates as EMI shielding
materials for commercial applications.

References

[1] Paul, C. R. (2006). Introduction to Electromagnetic Compatibility (EMC). In Introduction to Electromagnetic

Compatibility (eds K. Chang and C. R. Paul). doi:10.1002/0471758159.ch1
[2] Paul, C. R. (2006). EMC Requirements for Electronic Systems. In Introduction to Electromagnetic Compatibility
(eds K. Chang and C. R. Paul). doi:10.1002/0471758159.ch2
[3] Thomassin, J.-M., et al., Polymer/carbon based composites as electromagnetic interference (EMI) shielding
materials. Materials Science and Engineering: R: Reports, 2013. 74(7): p. 211-232.
[4] Paul, C. R. (2006). Shielding. In Introduction to Electromagnetic Compatibility (eds K. Chang and C. R. Paul).
doi:10.1002/0471758159.ch10
[5] Sun, Y., Z.-X. Guo, and J. Yu, Effect of ABS Rubber Content on the Localization of MWCNTs in PC/ABS Blends
and Electrical Resistivity of the Composites. Macromolecular Materials and Engineering, 2010. 295(3): p. 263-268.

83
Geng Li
Lizhi Zhang, Lihong Bao, Yu-Yang Zhang, Shi-Xuan Du, Hong-Jun Gao
Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing
100190, China

Contact@E-mail ([Link]@[Link])

Construction of graphene/silicene heterostructure by Si

intercalation
Silicene-based van der Waals heterostructures have been theoretically predicted to have interesting physical
properties, but their experimental fabrication has remained a challenge because of the easy oxidation of silicene
in air. Here we report the fabrication of graphene/silicene van der Waals heterostructures by silicon
intercalation. Density-functional-theory calculations show weak interactions between graphene and silicene
layers, confirming the formation of van der Waals heterostructures. The heterostructures show no observable
damage after air exposure for extended periods, indicating good air stability. The I-V characteristics of the
vertical graphene/silicene/Ru heterostructures show rectification behavior.

References

[1] J. H. Mao, L. Huang, Y. Pan, M. Gao, J. F. He, H. T. Zhou, H. M. Guo, Y. Tian, Q. Zou, L. Z. Zhang, H. G. Zhang,
Y. L. Wang, S. X. Du, X. J. Zhou, A. H. Castro Neto, H. J. Gao, Appl. Phys. Lett. 2012, 100, 093101.
[2] Y. Pan, H. G. Zhang, D. X. Shi, J. T. Sun, S. X. Du, F. Liu, H. J. Gao, Adv. Mater. 2009, 21, 2777.
[3] G. Li, H. T. Zhou, L. D. Pan, Y. Zhang, L. Huang, W. Y. Xu, S. X. Du, M. Ouyang, A. C. Ferrari, H. J. Gao, J. Am.
Chem. Soc. 2015, 137, 7099.
[4] G. Li, L. Z. Zhang, W. Y. Xu, J. B. Pan, S. R. Song, Y. Zhang, H. T. Zhou, Y. L. Wang, L. H. Bao, Y. -Y.
Zhang, S. X. Du, M. Ouyang, S. T. Pantelides, H. -J. Gao, Adv. Mater., in press

Figures

Figure 1: Formation of graphene/silicene heterostructure.

84
JinShu LI1
Euyheon Hwang1
1Department
of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT),
Sungkyunkwan University, Suwon, Korea
lijinshu@[Link]

Quasiparticle interference (QPI) in twisted bilayer

graphene
Twisted bilayer graphene, in which the lattice mismatch between neighboring layers gives rise to an additional
potential modulation, creates novel electronic features distinct from graphene. Its most fascinating aspect is the
Fermi velocity decreases with decreasing the twist angle between the two layers [1]. We calculate the effect of
quasiparticle interference (QPI) on the spatial variations of the local density of states in twisted graphene in the
neighborhood of an isolated impurity. A number of characteristic behaviors of interference are identified in the
Fourier transformed spectrum of scanning tunneling microscope (STM), which can map the energy dependent
local density of states by measuring the position dependence of the current /voltage characteristics [2].
Combining the powerful technique, STM, the QPI features may be analyzed to reveal information about the
momentum space structure of the electronic states in twisted bilayer graphene [3]. We investigate quasiparticle
interference in twisted bilayer graphene in two frameworks: the tight-binding model and the effective continuum
model based on the Dirac equation. By using the T-matrix approximation to analyze the effect of a localized
impurity on the local density of states in twisted bilayer graphene, we calculate the rotation angle dependence of
QPI patterns, which are huge different from those of monolayer and bilayer graphene. Combing the
experimental data from STM measurements for various energies and twisted angles, our calculated QPI results
provide the scattering information of twisted bilayer graphene.

References

[1] P. Moon, M. Koshino, Phys. Rev. B, 87, 205404, (2013).

[2] S. A. Kivelson, I. P. Bindloss, E. Fradkin, V. Oganesyan, J. M. Tranquada, A. Kapitulnik, and C.
Howald, Rev. Mod. Phys. 75, 1201 (2003).
[3] K. McElroy, R. W. Simmonds, J. E. Hoffman, D. Lee, J. Orenstein, H. Eisaki, S. Uchida, and J.
C. Davis, Nature (London) 422, 592 (2003).

85
Zhibo Liu1
Chuan Xu1, Ning Kang2, Xiuliang Ma1, Hui-Ming Cheng1, Wencai Ren1
1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of
Sciences, 72 Wenhua Road, Shenyang, China.
2Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking

University, 5 Yiheyuan Road, Beijing, China.

zbliu10s@[Link]

The boundaries of 2D Mo2C superconducting crystals

Domain (grain) boundaries have significant influence on the electrical, thermal, optical, mechanical properties of
2D materials. Ultrathin transition metal carbides (TMCs), known as MXenes, have attracted increasing
attentions due to their promising applications in energy storage, electromagnetic interference shielding, water
purification, sensors, and catalysis [1-4]. In this talk, we used aberration-corrected scanning transmission
electron microscopy (STEM) to study the domain (grain) boundary structure of chemical vapor deposited high-
quality 2D Mo2C superconducting crystals [5,6]. For different regular shapes including triangles, rectangles,
hexagons, octagons, nonagons, and dodecagons, the Mo atom sub-lattice in all these crystals has a uniform
hexagonal closely-packed arrangement without any boundaries. However, except for rectangular and octagonal
crystals, the C atom sub-lattices are composed of three or six domains with rotational-symmetry and well-
defined line-shaped domain boundaries. We found that there is very small lattice shear strain perpendicular to a
domain boundary. In contrast to the single sharp transition observed in single-domain crystals, transport studies
across domain boundaries show a broad resistive superconducting transition with two distinct transition
processes due to the formation of localized phase slip events within the boundaries, indicating a significant
influence of the boundary on 2D superconductivity. We also studied the grain boundaries (GBs) of 2D Mo2C
crystals, which show dislocation structure or unique sawtooth pattern depending on the tilt angle. Moreover, we
found two new Σ7 GBs with different periodic structure and crystallographic orientation at tilt angle of ~22º.
These findings provide new understandings on not only the defect structure of 2D TMCs but also the influence
of boundaries on 2D superconductivity, which would be helpful for tailoring the properties of TMCs through
boundary engineering.

References

[1] Ghidiu, M., Lukatskaya, M. R., Zhao, M. Q., Gogotsi, Y. & Barsoum, M. W., Nature, 7529 (2014) 78-81.
[2] Lukatskaya, M. R. et al., Science, 6153 (2013) 1502-1505.
[3] Shahzad, F. et al., Science, 6304 (2016) 1137-1140.
[4] Anasori, B., Lukatskaya, M. R. & Gogotsi, Y., Nat. Rev. Mater., 2 (2017) 16098.
[5] Xu, C. et al., Nat. Mater., 11 (2015) 1135-1141.
[6] Liu, Z. et al., Nano Lett., 7 (2016) 4243-4250.

86
Huibing Lu
Hai Wang
Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-ferrous
Metal and Featured Materials, Guangxi Zhuang Autonomous Region, Guilin, China.
hbwanghai@[Link]

Controllable synthesis of 2D Cr-doped MoO2.5(OH)0.5

nanosheets and application in Lithium Ion Batteries
Abstract： α-MoO3 has gained growing attention as anode matreials for lithium-ion batteries (LIBs) due to its
high theoretical capacity (1111 mAh g-1). However, their key limitations are its low electronic conductivity and
limited structural stability during charge-discharge process. Herein, we report a new 2D layered Cr-doped
MoO2.5(OH)0.5 (doped MoO2.5(OH)0.5), existing good electrical conductivity and fast Li+ diffusion pathways for
high-performance LIBs by a unique “doping-adsorption” strategy. Compared with doped MoO3, doped
MoO2.5(OH)0.5 has larger expanded spacing of the (0l0) crystal crystal plane for ultrafast Li+ storage. Their
lithiation-delithiation processes were studied by ex situ TEM combined with XPS analysis to reveal the
mechanism of the reversible conversion reaction. Interestingly, for doped MoO2.5(OH)0.5, it was found through
the as-formed LixMoO3 had an expanded (040) crystal plane with well-dispersed nano-dots after 10 cycles.
Moreover, the pulverized electrode has a distinct open pore structure. This unique structural characterization
would increase the eﬀective surface of intermediate products LixMoO3 to react with Li+ and shorten the diﬀusion
path to prompt electrochemical reaction. Additionally, the presence of Cr also played an important role in the
reversible decomposition of Li2O and enhanced specific capacity. When employed as an anode in NIBs, doped
MoO2.5(OH)0.5 delivers a capacity of 294 mAh g-1 at 10 A g-1 after 2000 cycles. Moreover, the reversible capacity
after electrochemical activation, is quite stable throughout the cycling, thereby presenting a promising new
anode materials for Li+ storage.
References
[1] C. Wang , L. Wu , H. Wang , W. Zuo , Y. Li , J. Liu, Adv. Funct. Mater., 25 (2015) 3524-3533.
[2] L. Cao, J. He, J. Li, J. Yan, J. Huang, Y. Qi, L. Feng, J. Power Sources, 392 (2017) 87-93.
Figures

a b

c d

Figure 1: (a)-(b) FESEM images of 2D Cr-doped MoO2.5(OH)0.5 and (c)-(d) 2D Cr-doped MoO3.

87
Intensity (a.u.)
doped MoO3

doped MoO2.5(OH)0.5

PDF:74-1648

PDF:05-0508

10 20 30 40 50 60 70 80
2θ (degree)
Figure 2: XRD patterns of doped MoO3 and doped MoO2.5(OH)0.5.
2200

2000

1800

1600

1400
Capacity (mAh.g )
-1

-1
1200 current density:2A·g
1000

800
doped Mo2.5(OH)0.5
600

400
doped MoO3
200

0
0 100 200 300 400 500 600
Cycle number (n)

Figure 3: Cycling performances of doped MoO3 and doped MoO2.5(OH)0.5 at 2A g-1.

88
Presenting Author: Kai Liu, Hao Luo
School of Materials Science and Engineering, Tsinghua, Beijing, China
Contact: liuk@[Link]

Probing and Modulating Interface Interactions in 2-

Dimensional Materials and Their Heterostructures
Abstract

2-dimensional (2D) van der Waals structures built up from layered materials, such as graphene, MoS 2, and their
heterostructures, have received growing attention owing to their simple fabrication by straightforward stacking
and various types of band alignments. Interface interactions in 2D materials and their heterostructures are of
vital importance to determine the properties of the 2D layers. In this talk, I will introduce some efforts in my
group on probing and modulating interface interactions in 2D systems, including mechanically characterizing
their interlayer interactions, employing surface enhanced Raman technique to probe local strains, and inducing
interlayer connections by defect engineering. Lastly, I will present an example of modulating properties of a 2D
semiconductor by interfacing it with an active, phase-transition material. Our results not only provide an insight
to understand interface interactions in 2D van der Waals structures, but also potentially allow engineering of
their properties as desired.

Keywords: 2D materials, heterostructure, interface interaction, phase transition

References

[1] S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, et al. Nat. Commun. 2014, 5, 3252.
[2] S. Tongay, W. Fan, J. Kang, J. Park, U. Koldemir, et al. Nano Lett. 2014, 14, 3185.
[3] K. Liu, Q. Yan, M. Chen, W. Fan, J. Wu, et al. Nano Lett. 2014, 14, 5097. (Arial Narrow 11)
[4] Y. Sun#, K. Liu#, X. Hong, M. Chen, F. Wang, et al. Nano Lett. 2014, 14, 5329.
[5] K. Liu, C.-L. Hsin, D. Fu, J. Suh, S. Tongay, et al. Adv. Mater. 2015, 27, 6841.
[6] S. Lee, F. Yang, J. Suh, J. Wu*, et al. Nat. Commun. 2015, 6, 8573.
[7] J. Hou, X. Wang, K. Liu*, et al. Small 2016, 12, 3976.
[8] J. Zhang, Y. Wei*, F. Yao, et al. Adv. Mater. 2017, 29, 1604469.
[9] Y. Sun, R. Wang, K. Liu*. Appl. Phys. Rev. 2017, 011301.
[10] X. Wang, W. Fan, K. Liu*, et al. Nanoscale 2018, in press.

89
Ruisong Ma
Qing Huan, Lihong Bao, Hong-Jun Gao*
Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, P.O. Box
603, Beijing 100190, P. R. China

hjgao@[Link]

Direct Four-Probe Measurement of Grain-Boundary Resistivity

and Mobility in Millimeter-Sized Graphene
Abstract
Grain boundaries (GBs) in polycrystalline graphene scatter charge carriers, which reduces carrier
mobility and limits graphene applications in high-speed electronics. Here we report the extraction of the
resistivity of GBs and the effect of GBs on carrier mobility by direct four-probe measurements on millimeter-
sized graphene bicrystals grown by chemical vapor deposition (CVD). To extract the GB resistivity and carrier
mobility from direct four-probe intragrain and intergrain measurements, an electronically equivalent extended 2D
GB region is defined based on Ohm’s law. Measurements on seven representative GBs find that the maximum
resistivities are in the range of several kΩ·μm to more than 100 kΩ·μm. Furthermore, the mobility in these
defective regions is reduced to 0.4−5.9 ‰ of the mobility of single-crystal, pristine graphene. Similarly, the effect
of wrinkles on carrier transport can also be derived. The present approach provides a reliable way to directly
probe charge-carrier scattering at GBs and can be further applied to evaluate the GB effect of other two-
dimensional polycrystalline materials, such as transitionmetal dichalcogenides (TMDCs).

References

[1] Ma, R. S. , Huan, Q. , Wu, L. M. et al. Nano Lett., 17 (2017) 5291- 5296
[2] Ma, R. S. , Huan, Q. , Wu, L. M. et al. Rev. Sci. Instrum., 88 (2017) 063704
[3] Ma, R. S. , Huan, Q. , Wu, L. M. et al. Chin. Phys. B 26 (2017) 066801

Figures

Figure 1: Schematic diagrams of four-probe measurements on graphene bicrystals.

90
Inyong Moon1
Sungwon Lee1, Myeongjin Lee1, Changsik Kim1, Daehee Seol2, Yunseok Kim2, Ki
Hyun Kim2, Geun Young Yeom1,2 and Won Jong Yoo1
1SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-
gu, Suwon, Gyeonggi-do, 16419 Korea
2School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-

gu, Suwon, Gyeonggi-do, 16419 Korea

yoowj@[Link]

Measurements of Fermi Level and Doping Concentration of 2D

Transition Metal Dichalcogenide Using Kelvin Probe Force
Microscopy
Some of atomically thin two-dimensional (2D) materials show good electrical performances. Many of the
interesting electrical properties can be realized more diversely by controlling dopant concentration. In this work,
we used plasma techniques to control the Fermi level of 2D transition metal dichalcogenide (TMDC), which can
be strongly related to dopant concentration (or it can be understood as carrier concentration many cases). As
2D TMDC, we found that semiconducting WSe2 and MoTe2 were effectively doped as p-type, attributed to
surface oxidation induced by N2 and O2 plasma. To make the quantitative analysis of the plasma doping effects,
the Kelvin probe force microscopy (KPFM) was employed in this work and we confirmed the Fermi level shifts,
strongly related to the doping concentrations of 2D TMDC. The validity of the KPFM results were confirmed by
measuring electrical characteristics of FET devices fabricated from the 2D TMDC.

ACKNOWLEDGMENTS
This work was supported by Basic Science Research Program through the National Research Foundation of
Korea (NRF) funded by the Ministry of Education (2018R1D1A1B07044712), and the Global Research
Laboratory (GRL) Program (2016K1A1A2912707) and Global Frontier R&D Program (2013M3A6B1078873),
both funded both the Ministry of Science, ICT & Future Planning via National Research Foundation of Korea
(NRF).

91
Munindra
Om Prakash Verma,
Electronics and Communication Engineering, Delhi Technical University, Sahbad
Daulatpur Delhi-India-110042

kumar.muninder90@[Link]

Quantum Capacitance Effect in Graphene-Metal-Oxide-

Semiconductor Field Effect Transistor with Large Area
Graphene Channel
This paper presents a physics-based quasianalytic modeling for graphene–metal-oxide-semiconductor field
effect transistor (GFETs) with large area graphene based on energy-balance equation solver using two-
dimensional density of states for the calculation of drain current. This model felicitates the reader with analysis
of quantum capacitance effect and velocity saturation in GFETs. Formulation of the current velocity saturation
equations at the steady state for determining energy of graphene phonon and their scattering rate is done by
Monte Carlo simulation method. Estimated various quantum capacitance values, and the result are compared
with the exiting methods. The proposed method gives the better results as compared with the state of art
methods available in the literature.
References

[1] I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, Nat.

Nanotechnol., vol. 3, no. 11, pp. 654–659, 2008.
[2] B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, pp. 1324–1328,
2012.
[3] J. S. Moon et al., IEEE Electron Device Le3., vol. 34, no. 9, pp. 1190–1192, 2013.

Figures

Figure 1: Iquantum capacitance vs gate voltage

92
Hamin Park
Sung-Yool Choi
School of Electrical Engineering, Center for Advanced Materials Discovery towards 3D Display, KAIST,
Daejeon, Korea

parkhamin@[Link]

Interlayer interaction in a van der Waals heterostructure of

transition metal dichalcogenide and hexagonal boron nitride
Two dimensional (2D) van der Waals (vdW) heterostructures have attracted explosive interest because of their
potential ability to exhibit novel quantum phenomena based on condensed matter physics.[1] The 2D vdW
heterostructures are formed by stacking different types of 2D materials, including graphene, transition metal
dichalcogenide (TMD) and hexagonal boron nitride (h-BN).[2,3] Each layers are dangling-bond-free and weakly
bound to neighboring layers by vdW interactions. The 2D vdW heterostructures have exhibited novel quantum
phenomena emerging from layer-layer interaction, such as electron-electron interaction and electron-phonon
interaction. As a template for an application to electronic device, the layer-layer interaction between TMD and h-
BN layer needs to be significantly investigated, because the TMD and h-BN exhibit a semiconducting and
insulating characteristic, respectively. In this study, we investigate the interlayer interaction between TMD and
h-BN by observing spectroscopic characteristics from the 2D vdW heterostructures. We fabricated the
heterostructures by transferring a top-layer flake onto bottom-layer flake using a pick-up transfer technique
based on polydimethylsiloxane (PDMS)/ polypropylene carbonate (PPC) stamp. The investigation of Raman
scattering and photoluminescence (PL) reveals the nature of phonon vibration and excitonic transition of the
heterostructures. We expect that the fundamental understanding of the layer-layer interaction in the 2D vdW
heterostructures play a key role for future applications to electronic devices based on 2D materials.

References

[1] Geim, A., et al., Nature, 499 (2013) 419

[2] Novoselov, K. S., et al., Science, 353 (2016) aac9439
[3] Pizzocchero, F., et al., Nature Communications, 7 (2016) 11894

Figures

Figure 1: Optical image of heterostructure composed of molybdenum disulfide and hexagonal boron nitride.

93
Jiang Pu
W. Zhang, Y. Kobayashi, Y. Takaguchi, Y. Miyata, K. Matsuda, Y. Miyauchi, T. Takenobu
Dept. of Applied Physics, Nagoya Univ., Bldg.3 Room 262, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Contact : [Link]@[Link]

Room Temperature Valley Polarized Light-Emitting Diodes of

Monolayer Transition Metal Dichalcogenides
Owing to broken spatial inversion symmetry and spin-orbit interaction in monolayer transition metal
dichalcogenides (TMDCs), their electronic properties at the band edge are associated with the two inequivalent
(K and -K) valleys, resulting in the interband transition coupled with optical helicity [1,2]. Indeed, the valley
polarization have been exclusively controlled by circularly polarized light pumping [2]. These features motivate
us to develop valley-polarized light-emitting diodes (LEDs) that can electrically generate circularly polarized light
emission. Although several researches have reported chiral electroluminescence (EL) from TMDCs, the solid
manner for electrical control valley polarized EL have remained unclear [3,4]. This lead to the limited utility of
relevant valley polarized LEDs, for instance, circularly polarized EL have mostly observed at low temperature (<
80 K). Therefore, establishing the approach to produce valley polarized LEDs operated at room temperature is
highly required for the development of TMDC-based valley functional device applications.
To understand operational mechanism for circularly polarized EL, the detailed evaluations in terms of electric
field dependence, temperature dependence, and importantly, spatial imaging of polarized light emission should
be addressed. However, current methods for fabricating TMDC LEDs have adopted complicated device
configurations such as transistors and heterostructures using tiny exfoliated samples, and thus, this
fundamental barrier has made investigating circularly polarized EL properties of TMDCs inevitably difficult [3,4].
Here, we newly propose a versatile and simple approach to generate light emission in TMDCs [5,6]. The
proposed device only needs two electrodes deposited onto TMDCs, followed by spin-coating ion gels, a mixture
of ionic liquid and triblock co-polymer (Fig. 1). We apply this method to chemical vapor deposition (CVD)-grown
single-crystalline WSe2 and WS2 monolayers to achieve polarized EL imaging and spectroscopy.
Figures 2a and 2b shows optical micrograph and EL image obtained in WS2 LEDs near room temperature
(280 K). We observed clear light emission between two electrodes, resulting in EL generation due to electrolyte-
induced p-i-n junctions (Fig.1). Owing to direct EL observations, we performed spatial polarization-resolved EL
spectroscopy. Figures 2c and 2d exhibit polarization-resolved EL spectra obtained at two different positions of
WS2 flake, in which each spectrum was recorded inside crystal and crystal edge regions, respectively. Only
small EL polarization was obtained at lower temperature (< 40 K) inside crystal regions (Fig. 2d). In contrast,
larger EL polarization was observed at higher temperature (> 100 K) at crystal edge regions (Fig. 2c). Most
importantly, this large EL polarization was robustly remained up to 280 K. These results suggest the position-
dependent distinct EL polarization mechanism in TMDCs. In order to examine the origin of robust circularly
polarized EL, furthermore, we compare these EL results with photoluminescence mapping done in same crystal.
As a result, we found out that the local strain induced at crystal edge regions due to lattice mismatch would play
a significant role to create robust EL polarization in TMDCs. Our observations provide possible ability to
construct practical TMDC-based atomically thin chiral light sources for future opto-valleytronic applications.

References

[1] D. Xiao et al., Phys. Rev. Lett. 108, 196802 (2012)

[2] X. Xu et al., Nat. Phys. 10, 343 (2014)
[3] Y. J. Zhang et al., Science 344, 725 (2014)
[4] W. Yang et al., Nano Lett. 16, 1560 (2016)
[5] J. Pu et al., Adv. Mater 29, 1606918 (2017)
[6] J. Pu and T. Takenobu Adv. Mater. 1707627 (2018)

94
Figures

Figure 1: Schematic illustrations of a proposed light-emitting device, an ionic liquid, and a triblock copolymer.

Figure 2: (a) Optical micrograph and (b) EL image of a CVD-grown single-crystalline monolayer WS2 light-emitting diode.
Polarization-resolved EL spectra measured at temperature of (c) 140 K and (d) 10 K, in which each spectrum is recorded
at different positions of a WS2 flake.

95
Claas Julian RECKMEIER
Nicolai Hartmann, Adrian Cernescu, Sergiu Amarie
neaspec GmbH, Haar (Munich), Germany

[Link]@[Link]

Cryogenic near-field imaging and spectroscopy

at the 10-nanometer-scale
Two-dimensional materials like graphene, boron-nitride or transition-metal dichalcogenides are of rising interest
for novel plasmonic and opto-electronic applications due to their unique characteristics and their broad
application range. However, being highly sensitive to the local environment, their properties can strongly vary on
the nanometer length scale, severely limiting the macroscopic performance of such novel devices. Scattering-
type scanning near-field optical microscopy (s-SNOM) and nanoscale FTIR spectroscopy (nano-FTIR) systems
have become the key technology to understand and resolve these limitations by measuring the optical and
electronic properties of such nanostructures down to the 10-nanometer length scale.
SNOM [1-8] and nano-FTIR [1,2] have already proven themselves vital for modern nanoscopy and have been
used in applications such as chemical identification [2], free-carrier profiling [3], or the direct mapping of
propagating plasmons [4,5,8] and polaritons [6]. It enables extraction of key information such as the local
conductivity, intrinsic electron-doping, absorption or the complex-valued refractive index, all at the nanoscale.
Within this talk we will introduce the newest technological breakthrough in the field of near-field optics -
Cryogenic near-field imaging and spectroscopy. Pioneered by the group of Dimitri Basov [7,8], this novel
approach extends ambient near-field measurements to the cryogenic temperature range (<10-300 Kelvin, [1])
and opens a complete new world for nanoscale optical microscopy and spectroscopy. This technology enables
for example the direct mapping of phase-transitions in strongly correlated materials [7,9] or the detection of low-
energy elementary excitations at the surface of solid-state systems such as graphene [8].

References
[1] [Link]
[2] F. Huth et al., Nano Letters 12, 3973 (2012)
[3] J. M. Stiegler et al., Nano Letters 10, 1387 (2010)
[4] J. Chen et al., Nature 487, 77 (2012)
[5] Z. Fei et al., Nature 487, 82 (2012)
[6] E. Yoxall et al., Nature Photonics 9, 674 (2015)
[7] A. S. McLeod et al., Nature Phys. 13, 80 (2017)
[8] G. X. Ni et al., Nature 557, 530–533 (2018)
[9] H.T. Stinson et al., arXiv:1711.05242v1

Figures

Figure 1: Cryogenic near-field optical microscopy. Topography, near-field amplitude, and near-field phase image of an
epitaxial graphene sample measured at an excitation wavelength of 9.7µm. The sample temperature for these
measurements is set to 8.0 Kelvin. Clear interference pattern of propagating surface-plasmon polaritons are visible at
grain boundaries and defect sites [3,4].

96
Valentino Romano1
Sebastiano Bellani2, Beatriz-Martin Garcia2, Leyla Najafi2, Antonio Esau Del Rio
Castillo2, Mirko Prato3, Giovanna D’Angelo1 and Francesco Bonaccorso2,4
1 Dipartimento di Scienze Matematiche ed Informatiche, Scienze Fisiche e Scienze della Terra, Università di
Messina, Viale F. Stagno D’Alcontres 31, S. Agata, 98166 Messina, Italy.
2 Graphene Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy.
3 Materials Characterisation Facility, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy.
4 BeDimensional Srl, via Albisola 120, 16163 Genova, Italy.

vromano@[Link]

An industrial scalable approach for graphene/carbon

nanotubes hybrid flexible supercapacitors
Flexible electronic devices are the forefront of research activity for their multiple uses. [1, 2] One of the major
challenges in this research area is the fabrication of flexible energy storage systems (ESSs) since they can be
used in wearable electronic applications such as medical devices, portable antennas, etc. [1, 2] Nowadays,
batteries and conventional capacitors are prototypical ESSs but they suffer from some limitations. On the one
hand, batteries have low power density, slow recharge time and limited cyclability [3]. On the other hand,
conventional capacitors show high power density and life-cycles stability, but with the downside of lower energy
density compared to batteries. The development of electrochemical double layer capacitors (EDLCs or
supercapacitors) is bridging the gap between these two ESSs technologies. In fact, supercapacitors show
higher energy density than conventional capacitors and higher charge/discharge rates, life – time and power
density than batteries. [4] These performances are achieved thanks to the materials used in the electrodes for
supercapacitors: high porous/specific surface area carbon based materials, e.g., activated carbon (AC) [4].
However, AC suffers from a major drawback: its surface area is not entirely accessible to the ions of the
electrolyte due to the presence of micro-pores that hinder the adsorption of ions. Moreover, AC based
electrodes require the use of binder that wrap together the AC particles, but cause an increase in the electrical
resistivity of the electrodes. [5] To overcome these drawbacks, many other carbon-based materials have been
suggested as possible active material alternatives , including carbon nanotubes (CNTs) and graphene. [6]
Nevertheless, electrodes fabricated by using either CNTs or graphene suffer from re-aggregation effects (such
as the bundling of CNTs and the restacking of graphene flakes) which cause a reduction of the specific surface
area and consequently of the electrochemical performance of the device. [7] To tackle these issues, hybrid
compounds (graphene/CNTs mixtures) were proposed as possible solutions. [7] Herein, we introduce a scalable
approach for the production of this type of devices. Our starting materials are commercial CNTs and graphite,
dispersed in a solvent (N-methyl-2-pyrrolidon). The CNTs are de-bundled by means of ultrasonication
techniques [8], while graphene is produced by wet-jet milling exfoliation of pristine graphite [9, 10]. The wet-jet
milling is a high-yield (~ 100 %) procedure that allows the production of large quantities of graphene (> 20 g h-1).
[9, 10] These features are compatible with industrial requirements and avoid time-consuming solution-based
processes. [11] By mixing the CNTs and graphene dispersions in a 1:1 weight ratio, the final functional ink is
obtained and can be used for scalable manufacturing of supercapacitors through methods such as printing and
vacuum filtration. [12] The as produced electrodes are flexible and self-standing (no binder is used) and the
devices, fabricated without the need of any metal, show areal capacitances > 150 mF cm-2.

97
References

[1] Nathan A., Ahnood A., Cole M.T., Lee S., Suzuki Y., Hiralal P., Bonaccorso F., Hasan T., Garcia-Gancedo L.,
Dyadyusha A. and Haque S., Proceedings of the IEEE, 100(Special Centennial Issue) (2012), pp. 1486-1517.
[2] Bonaccorso F., Colombo L., Yu G., Stoller M., Tozzini V., Ferrari A.C., Ruoff R.S. and Pellegrini V., Science,
6217 (2015), pp. 1246501.
[3] Bruce P.G., Freunberger S.A., Hardwick L.J. and Tarascon J.M., Nature materials, 11(2012), pp. 19-29.
[4] González A., Goikolea E., Barrena J.A. and Mysyk R., Renewable and Sustainable Energy Reviews, 58 (2016),
pp. 1189-1206.
[5] Pandolfo A.G., Hollenkamp A.F., Journal of Power Sources, 157 (2006 ), pp. 11−27
[6] Burke A., Journal of power sources, 91(2000), pp. 37-50.
[7] Ansaldo A., Bondavalli P., Bellani S., Del Rio Castillo A.E., Prato M., Pellegrini V., Pognon G. and Bonaccorso F.,
ChemNanoMat, 3(2017), pp. 436-446.
[8] Bonaccorso F., Hasan T., Tan P.H., Sciascia C., Privitera G., Di Marco G., Gucciardi P.G. and Ferrari A.C., The
Journal of Physical Chemistry C, 114(2010), pp. 17267-17285.
[9] Patent number: UB2015A005920.
[10] Castillo A.E.D.R., Pellegrini V., Ansaldo A., Ricciardella F., Sun H., Marasco L., Buha J., Dang Z., Gagliani L.,
Lago E. and Curreli N., Gentiluomo S., Palazon F., Toth P., Mantero E., Crugliano M., Gamucci A., Tomadin A.,
Polini M. and Bonaccorso F. arXiv preprint arXiv:1804.10688 (2018).
[11] Bonaccorso F., Lombardo A., Hasan T., Sun Z., Colombo L. and Ferrari A.C., Materials today, 15(2012), pp. 564-
589.
[12] Bonaccorso F., Bartolotta A., Coleman J.N. and Backes C., Advanced Materials, 28(2016), pp. 6136-6166.

98
Rizwan Ur Rehman Sagar
Min Zhang
Graduate School at Shenzhen, University Town, Shenzhen, China

[Link]@[Link]

Magneto-transport Properties of Graphene Foam

Large area single crystal two dimensional (2D) graphene is not realized to the date, which is the biggest hurdle
for the utilization of graphene in practical electronic gadgets.1 According to the roadmap of Novoselov et al.2,
high-quality large area 2D graphene may be available in 2035, indicating unavailability of large area single
crystal graphene in the present days. However, hierarchy of 3D structure of 2D graphene such as graphene
foam (GF) for graphene-based practical devices could turn as an alternate.3 To the best of our knowledge,
magneto-transport properties of bulk GF have not been explored so far. Magneto-transport properties of GF
could be different in comparison to 2D graphene due to the presence of different sizes of graphene flakes and
more crucially the types of connection between these flakes, presence of edge boundaries, 5 geometry of
graphene edges,6 difference in the stacking of graphene layers and different number of graphene layers. 7-9
Therefore, graphene morphology may influence on the motion and trajectories of the charge carriers under the
applied magnetic field, thus, interesting electro/magneto transport properties can be observed. However, metal
electrode deposition on the top of GF is a big challenge for studying electro/magneto transport properties. 10
Herein, we present the first observation of magneto-transport properties of GF composed of a few layers in a
wide temperature range of 2 − 300 K. The multilayer polycrystalline GF was fabricated with the help of Chemical
Vapor Deposition (CVD) (Fig. 1a-f). Large room temperature linear positive magnetoresistance (PMR ~ 171 %
at B ~ 9 T) has been detected.11 The largest PMR ~ 213 % has been achieved at 2 K under a magnetic field of
9 T, which can be tuned by the addition of poly-(methyl methacrylate) to the porous structure of the foam. The
excellent magneto-transport properties of GF open a way towards three-dimensional graphene-based
magnetoelectronic devices. Magnetoresistance (MR) of graphene is fixed under a particular magnetic field and
temperature but can be further improved or controlled by introducing artificial defect states. These artificial
defects can be introduced via fluorination that is a conventional method to control the magnitude of MR required
for magnetoelectronic applications. One of the main benefits of fluorination is the de-fluorination, which takes
place within few days resulting in doping-free defects. Herein, tunable and temperature-independent
magnetotransport of GF is achieved by controlled fluorination process for the first time. The magnitude of MR
decreases with the increasing fluorination time (i.e. 30, 60 and 90 min), indicating defects induced scattering
plays a major role in magnetotransport properties of fluorinated GF (FGF). The magnitude of MR in FGF
specimens at room temperature (under a magnetic field strength of 5 T) was observed for three months, a
particular value of MR (FGF-30 ~ 59%, FGF-60 ~ 58%, FGF-90 ~ 37%) is observed that is higher in magnitude
than the first day of fluorination. In this way, fluorination of GF can provide a pathway to tune magnetotransport
properties being very useful for magnetoelectronics devices especially highly sensitive magnetic sensors.
References
1. Y. Hao, L. Wang, Y. Liu, H. Chen, X. Wang, C. Tan, S. Nie, J. W. Suk, T. Jiang, T. Liang, J. Xiao, W. Ye, C. R.
Dean, B. I. Yakobson, K. F. McCarty, P. Kim, J. Hone, L. Colombo and R. S. Ruoff, Nat Nanotechnol 11 (5), 426-431
(2016).
2. K. S. Novoselov, V. I. Falko, L. Colombo, P. R. Gellert, M. G. Schwab and K. Kim, Nature 490 (7419), 192-200
(2012).
3. K. Shehzad, Y. Xu, C. Gao and X. Duan, Chem Soc Rev 45 (20), 5541-5588 (2016).
4. P. Li, Q. Zhang, X. He, W. Ren, H.-M. Cheng and X.-x. Zhang, Phys Rev B 94 (4), 045402 (2016).
5. G. Xu, C. M. Torres, J. Tang, J. Bai, E. B. Song, Y. Huang, X. Duan, Y. Zhang and K. L. Wang, Nano Lett 11 (3),
1082-1086 (2011).
6. A. T. Murdock, A. Koos, T. B. Britton, L. Houben, T. Batten, T. Zhang, A. J. Wilkinson, R. E. Dunin-Borkowski, C.
E. Lekka and N. Grobert, Acs Nano 7 (2), 1351-1359 (2013).

99
7. Y. Zhang, T. T. Tang, C. Girit, Z. Hao, M. C. Martin, A. Zettl, M. F. Crommie, Y. R. Shen and F. Wang, Nature
459 (7248), 820-823 (2009).
8. R. U. R. Sagar, X. Zhang and C. Xiong, Mater Res Innov 18 (S4), S4-706-S704-710 (2014).
9. C. H. Lui, Z. Li, K. F. Mak, E. Cappelluti and T. F. Heinz, Nat Phys 7 (12), 944-947 (2011).
10. A. Allain, J. Kang, K. Banerjee and A. Kis, Nat Mater 14 (12), 1195-1205 (2015).
11. R. U. R. Sagar, M. Galluzzi, C. Wan, K. Shehzad, S. T. Navale, T. Anwar, R. S. Mane, H. G. Piao, A. Ali and F. J.
Stadler, ACS Appl Mater Interfaces 9 (2), 1891-1898 (2017).

Figure 1: Characterization of Chemical Vapor Deposition (CVD) grown graphene foam (GF) (a-f). Electrode assembly for
magnetotransport properties of GF (g-h). Magnetoresistance (MR) of GF and GF/Polymethyl-methacrylate (PMMA)
specimen (i) Mechanical stability of GF via PMMA infiltration. MR of fluorinated GF (FGF) under 30, 60 and 90 mins.

100
Suyan Shan
Yong Liu*
Laboratory of Nanoscale Biosensing and Bioimaging,
School of Ophthalmology and Optometry, School of Biomedical Engineering,
State key Laboratory of Ophthalmology, Optometry and Vision Science
Wenzhou Medical University, Wenzhou, Zhejiang 325027, China

yongliu@[Link]

The fibroblast growth factor modified nitrogen-containing

graphene for regeneration of photo-damaged retinal pigment
epithelial cells
Abstract:
Age-related macular degeneration (AMD) is one of the most common ocular diseases which may cause
irreversible blindness, particularly among people who are aged more than 65 years. AMD is mainly caused by
the apoptosis of retinal pigment epithelial (RPE) cells. RPE cells contain lipofuscin and rich long-chain
unsaturated fatty acids which are sensitive to reactive oxygen species (ROS). Presence of excessive ROS
inside cells always results in the damage or apoptosis of cells. Thus, it is a big challenge for both scientists and
clinicians on how to decrease the level of ROS inside damaged RPE cells and realize the regeneration of RPE
cells, for the treatment of AMD related diseases.
In this work, we synthesized nanocomposites from the basic fibroblast growth factor (bFGF) and graphene
which could efficiently facilitate the reduction of ROS. Our recent study discovered that nitrogen-doped
graphene (NG) exhibited superb catalytic activity for reduction of oxygen [1]. It is thus interesting to investigate
the capability of NG on the reduction of ROS inside cells. This work presents a facile way to prepare nitrogen
containing molecules (such as bFGF) modified graphene (bFGF-NG) via a self-discovered edge-functionalized
ball milling method [2, 3]. The capability of the resulting bFGF-NG to eliminate the ROS inside photo-damaged
RPE cells will be discussed. Presence of bFGF can further inhibit the oxidative stress of cells by enhancing the
activity of signal pathways such as PI3K/AKT and Nrf 2. Incorporation of graphene with bFGF is also beneficial
for improving the poor stability and half-life period of bFGF inside cells. Our preliminary results support that the
ROS level of photo-damaged RPE cells could be significantly reduced by the utilization of the as-synthesized
bFGF-NG nanocomposites, suggesting possibility for the regeneration of ROS induced apoptotic cells.
References
[1] L. Qu, Y. Liu, J. Baek, L. Dai. ACS Nano. (2010) 4, 1321.
[2] L. Yan, M. Lin, C. Zeng, et al. J. Mater. Chem. (2012) 2, 8367.
[3] M. Lin, S. Shan, P. Liu, et al. J. Biomed. Nanotechnol. (2018) 14, 1-10.
Figures

101
Figure 1: The ROS level of ARPE-19 after cultured with H2O2 and H2O2+ bFGF-NG. The ROS level is reduced near to
40% by bFGF-NG.

102
Gwang Hyuk Shin
Junghoon Park, Khang June Lee, Geon-Beom Lee, Hyun Bae Jeon, Yang-Kyu
Choi, Kyoungsik Yu and Sung-Yool Choi
School of Electrical Engineering, Center for Advanced Materials Discovery towards 3D Display, KAIST,
Daejeon, Korea
skh89@[Link]

Si-MoS2 Vertical Heterostructure for High Responsivity

Photodetector
We demonstrate the photodiode characteristics based on mechanically exfoliated multilayer MoS 2/p-type
silicon heterojunction by optimizing the thickness of the MoS2 layer. Among devices, 48-nm thickness MoS2
device showed the best performance with the responsivity (R) of 76.1 A/W, the detectivity (D*) of 1.6 X 1012
Jones, and the noise equivalent power (NEP) of 7.82 X 10 -15 A/Hz1/2 at an external reverse bias, which is
approximately 100-fold improvement of the R compared to the commercial Si p-i-n photodiode with the R below
1 A/W. In addition, the device exhibited zero bias operation (photovoltaic characteristic) with the open-circuit
voltage (Voc) of 0.5 V and the short-circuit current density (Jsc) of 161 mA/cm2. Indeed, this p-n vertical van der
Waals heterojunction exhibited good photoresponse characteristics. These results could contribute to the
application of MoS2/Silicon heterojunction toward optoelectronics such as photodetectors [1] and solar cells [2].

References

[1] Wang, L. et al., Adv. Funct. Mater., 25 (2015) 2910-2919

[2] Tsai, M.-L. et al., ACS Nano, 8 (2014) 8317-8322

Figures

Figure 1: Optical microscope image of the photodetector.

103
Jinhua Sun1
Vincenzo Palermo1,2
1 Department of Industrial and Materials Science, Chalmers University of Technology, Gothenburg, Sweden
2Institute of Organic Synthesis and Photoreactivity (ISOF), National Research Council of Italy (CNR), Via P.
Gobetti 101, I-40129 Bologna, Italy

jinhua@[Link]

Molecular pillar approach to construct functionalized graphene

for energy storage
The rich and numerous oxygen-containing functional groups decorated on graphene oxide (GO) provide a
possibility to chemically modify GO for various applications. In my talk, I will first introduce our research
progress in tuning the interlayer distance of GO in the precision of angstrom by swelling in different solvents and
using intercalation of differently sized organic molecular pillars, with the focus on using rigid molecule
(Tetrakis(4-aminophenyl)methane (TKAm)) to make inter-linking of GO planes (Figure 1a).[1] The 3D shape of
this rigid molecule could be of advantage for stability of pillared structures. The synthesized GO pillared with
TKAm shows an expansion of inter-layer distance of GO from ~7.5Å to 13-14Å. The intercalated TKAm as
molecular pillars expand the GO structure resulting in high surface area up to 660 m2 g-1. Besides 3D molecules,
a simple molecule 4-benzene diboronic acid (DBA) as an idealized linker was reported to be efficient for linking
GO.[2] However, our previous studies have demonstrated that the DBA molecules are likely to attach only on
one side of inter-layer. Instead of using it to prepare graphene pillared structure, our alternative idea is to
develop a molecular pillar approach to construct 2D-2D hybrid materials by using DBA pillars on GO. I will
introduce how we utilize the chemically attached DBA as molecular pillars to directing grow ultrathin covalent
organic frameworks (COF) nanosheets (v-COF-GO) (Figure 1b).[3] The hybrid material shows forest of COF-1
nanosheets with thickness of ~3 to 15 nm vertically grafting on the surface of GO via DBA linker. To emphasize
the important role of DBA pillars on vertical growth of COF-1, the same reaction in absence of molecular pillars
was performed and resulted in uncontrollable growth of thick COF-1 platelets parallel to the surface of GO. The
v-COF-GO was converted into conductive carbon material with ultrathin porous carbon nanosheets grafted to
graphene in edge-on orientation. It was demonstrated as a high-performance electrode material for
supercapacitors. Controlling nucleation of 2D COF sheets and their growth direction by using molecular pillars
covalently attached to graphene as structure-directing agent provides very promising route for preparation of
new family hybrid materials.

References

[1] J. H. Sun, F. Morales-Lara, A. V. Talyzin, et al., Carbon 120 (2017) 145-156.

[2] J. W. Burress, S. Gadipelli, J. Ford, et al., Angew. Chem. Int. Ed. 49 (2010) 8902-8904.
[3] J. H. Sun, A. Klechikov, A. V. Talyzin, et al., Angew. Chem. Int. Ed. 57 (2018) 1034-1038.

Figures

104
Figure 1: (a) Intercalation of rigid 3D molecules into interlayers of graphene for the synthesis of pillared graphene. (b)
Growth of vertical COF-1 nanosheets using DBA as molecular nucleation sites grafted on GO.

105
Xiao Sun
Hailin Peng and Zhongfan Liu
Peking University, 202 Chengfu Road, Haidian District, Beijing 100871, P. R. China

sunxiao-cnc@[Link]

Rapid Growth of Large Single-Crystalline Graphene with

Ethane
Many studies are conducted based on large single-crystalline graphene for its promising application prospects.
Contemporary growth conditions of large domain size graphene not only requiring a fastidious condition, but
also suffering from a slow growth[1, 2]. Thus, it leaded to a high energy consumption in large-scale production.
Herein, we report a rapid growth method of large single-crystalline graphene using ethane as carbon feedstock.
Experimental results have shown ethane as a carbon source could trigger the growth of high-quality graphene 4
times faster than using methane. Sub-centimeter single-crystalline graphene at 1000 oC by using ethane was
achieved, with a remarkable growth rate 420 μm min−1. In addition, for rapid growth of large single-crystalline
graphene we proposed a method by making good use of thermal decomposition of carbon source which has
lower decomposition energy barrier.

References

[1] Han, G. H.; Gunes, F.; Bae, J. J.; Kim, E. S.; Nano Lett. 11 (2011), 4144.
[2] Zhou, H.; Yu, W. J.; Liu, L.; Cheng, R.; Nat. Commun. 4 (2013), 2096.

Figures

Figure 1: Comparison of graphene growth with methane (left) and ethane (right).

106
Haihua Tao
Shubin Su, Hao Li, Yixuan Wu, Huan Yue, Xianfeng Chen
Institute of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China

[Link]@[Link]

Patterning Graphene Film by Magnetic-assisted UV

Photochemical Oxidation

Patterning graphene film is a significant step in fabricating graphene-based elements in optoelectronics. In

this talk, I will present a feasible solution, including our recent breakthrough progress, to make graphene
patterns by magnetic-assisted UV photochemical oxidation that overcomes the obstacles of organic
contamination, linewidth resolution, and substrate damaging [1-4]. During this process, the photodissociated
paramagnetic oxidative radicals are magnetized and they form directional motions in an inhomogeneous
external magnetic field. As a consequence, the directional and enhanced oxidation of these radicals facilitate
graphene patterning. Using a ferromagnetic steel mask, a certain inhomogeneous vertical magnetic-field-
assisted UV photochemical oxidation has a capability of patterning graphene microstructure with a line width of
20 μm and lateral under-oxidation less than 1 μm. This approach can be applied to fabricate graphene field-
effect transistor and photodetector arrays. Magnetic-assisted UV photochemical oxidation should be a
promising solution toward resist-free, substrate non-damaging, and cost-effective fabrication of graphene
microstructures.

References

[1] Y. Wu, H. Tao*, S. Su, H. Yue, H. Li, Z. Zhang, Z. Ni, and X. Chen*. Sci. Rep. 7, 46583, 2017.
[2] H. Yue, H. Tao*, Y. Wu, S. Su, H. Li, Z. Ni, and X. Chen*. Phys. Chem. Chem. Phys. 19, 27353, 2017.
[3] Z. Zhang，H. Tao*, H. Li, G. Ding, Z. Ni, and X. Chen*. Opt. Mater. Express 6, 3527, 2016.
[4] N. Leconte, J. Moser, P. Ordejon, H. Tao, A. Lherbier, A. Bachtold, F. Alsina, C. M. S. Torres, J. C. Charlier and
S. Roche, ACS Nano 4, 4033, 2010.

107
Figures

Figure 1: Dynamic photochemical reaction in the magnetic-assisted UV photochemical oxidation (BZ=0.31 T, ∇BZ=90 T∙m-1)
under irradiation of the ultraviolet lamp. (a) Dynamic motion of various molecules with green arrows denoting the velocity.
(b) Photodissociation of ozone and oxygen molecule under different UV excitations in the magnetic field. (c) Collisions
between the oxygen molecule/atoms and the diamagnetic molecules. The diamagnetic singlet oxygen molecule
and atom (O(1D) deactivate individually to their ground states via collisions.

108
Lei Tao (陶蕾)1,2
Yu-Yang Zhang (张余洋)1,2,3, Jiatao Sun (孙家涛)1,2, Shixuan Du (杜世萱)1,2,3†
and Hong-Jun Gao (高鸿钧)1,2,3
1Institute
of Physics, Chinese Academy of Sciences, Beijing 100190, China
2University
of Chinese Academy of Sciences, Beijing 100190, China
3CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing

100190, China

ltao@[Link]

Band engineering of double-wall Mo-based hybrid nanotubes

Hybrid transition-metal dichalcogenides (TMDs) with different chalcogens on each side (X-TM-Y) have attracted
attentions because of the unique properties. Nanotubes based on hybrid TMD materials have advantages in
flexibility over conventional TMD nanotubes. Here we predict the wide band gap tunability of hybrid TMD
double-wall nanotubes (DWNTs) from metal to semiconductor. Using density-function theory (DFT) with HSE06
hybrid functional, we find that the electronic property of X-Mo-Y DWNTs (X = O and S, inside a tube. Y = S and
Se, outside a tube) depends both on electronegativity difference and diameter difference. If there is no
difference in electron negativity between inner atoms (X) of outer tube and outer atoms (Y) of inner tube, the
band gap of DWNTs is the same as that of the inner one. If there is a significant electronegativity difference, the
electronic property of DWNTs ranges from metallic to semiconducting, depending on diameter differences. Our
results provide alternative ways for the band gap engineering of TMD nanotubes.

References

[1] Lei Tao, Yu-Yang Zhang, Jiatao Sun, Shixuan Du, Hong-Jun Gao, Band engineering of double-wall Mo-based hybrid
nanotubes, Chinese Physics B, Vol. 27, No. 7, 2018.

109
He Tian
Tsinghua University, Beijing, China

tianhe88@[Link]

Novel 2D devices based on graphene, BP and perovskite

In this talk, I will introduce several novel 2D devices beyond graphene. The first part is related to graphene
devices. Tunable graphene LED [1] and graphene artificial throat [2] has been demonstrated. The second part
is related to 2D perovskite devices. Record low operation current 2D perovskite-RRAM has been demonstrated
[3]. Great stability has also been demonstrated via hBN-2D perovskite stacking [4]. The third part is related to
BP devices. Reconfigurable BP-SnSe synapse has been demonstrated [5]. Moreover, the reconfigurable BP p-n
junctions have been demonstrated with ideality factor close to 1 [6].

References

[1] X. Wang+, H. Tian+, et al., Nature Communications, 6 (2015) 7767.

[2] L. Tao+, H. Tian+, et al., Nature Communications, 8 (2017) 14579.
[3] H. Tian*, et al., ACS Nano, 11 (2017) 12247.
[4] L. Zhao+, H. Tian+*, et al., Joule, In press (2018).
[5] H. Tian, et al., ACS Nano, 11 (2017) 7156.
[6] H. Tian*, et, al., IEEE Transactions on Electron Devices, In press (2018).

110
Hai Wang
Mischa Bonn
Molecular Spectroscopy Group, Max Planck Institute for Polymer Research,
Ackermannweg 10, 55128 Mainz, Germany
wanghai@[Link]

Tailoring Graphene: from optical control of carrier density to

bandgap engineering in graphene nanoribbons
Abstract
Owing to their massless nature, charge carriers in graphene possess record mobilities up to 350,000 cm 2·V-1·s-
1.[1] The application of graphene for high mobility devices requires switching the conducting states in graphene,

so that control of the carrier density or Fermi level is critical. Control of the Fermi level is conventionally
achieved by electrostatic or electrochemical gating.[2] Such Fermi energy tuning schemes are effective, but
typically require elaborate clean room fabrication, especially when sub-micron local gating structures are
required. Here, I will present two examples of effectively modulating the doping structures in graphene in a
convenient and reversible manner, by: (1) optically controlling the adsorption-desorption equilibrium of
molecular oxygen (a p-dopant) by laser excitation to dynamically modify the doping concentration in graphene; [3]
and (2) tuning the photo-induced structural change and charge transfer dynamics between the grafted
molecules and graphene.[4] Additionally, we demonstrate that the optical control of Fermi energy in graphene
allows one to optically write doping structure with spatial control, opening new opportunities for creating
complex doping features in a convenient way.
The second part of the talk will deal with graphene nanoribbons. Due to its semimetal characteristics of
graphene’s band structure, the on-off ratio in the graphene-based transistor is too low to be useful for practical
applications. It has been a long-standing pursuit, to open up and control the bandgap in graphene, by tailoring
the graphene into its nanoribbons with atomic precision. Recent advances in bottom-up synthesis in Mainz (in
the group of Dr. Akimitsu Narita, Prof. Xinliang Feng and Prof. Klaus Muellen) now allow atomic control of
graphene nanoribbons (GNRs) with well-defined bandgap and optical properties. I will present some our recent
optical ultrafast conductivity studies on graphene nanoribbons using THz spectroscopy, and show how the
conductivity varies with the precise structure of the nanoribbons (e.g. the width, and edge structure). [5-7]

References
[1] Banszerus Luca et al., Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable
copper, Science Advances 2015 1(6), e1500222;

[2] Kostya S Novoselov et al., Electric field effect in atomically thin carbon films, Science 2004 306 (5696), 666-
669;

[3] Hai I Wang et al., Reversible Photochemical Control of Doping Levels in Supported Graphene, The Journal
of Physical Chemistry C 2017, 121 (7), 4083–4091;

[4] Zhaoyang Liu, Hai I Wang et al., Photoswitchable Micro-Supercapacitor Based on a Diarylethene-Graphene
Composite Film, Journal of the American Chemical Society 2017, 139 (28), 9443–9446;

[5] Zongping Chen, Hai I Wang et al., Lateral Fusion of Chemical Vapor Deposited N = 5 Armchair Graphene
Nanoribbons, Journal of the American Chemical Society 2017, 139 (28), 9483–9486;

111
[6] Zongping Chen, Hai I Wang et al., Chemical Vapor Deposition Synthesis and Terahertz Photoconductivity of
Low-Band-Gap N = 9 Armchair Graphene Nanoribbons, Journal of the American Chemical Society 2017, 139
(10), 3635–3638;

[7] Ivan Ivanov et al., Role of Edge Engineering in Photoconductiviy of Graphene Nano-ribbons, Journal of the
American Chemical Society 2017, 139 (23), 7982–7988;

112
Hai Wang
Caihong Yang
Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-ferrous
Metal and Featured Materials, Guangxi Zhuang Autonomous Region, Guilin, China.
hbwanghai@[Link]

Consideration on the structure of Mo-based anode materials

for improving lithium storage performance
Abstract： Mo-based compounds have drawn increasing interest because of their high theoretical specific
capacity and cyclic stability. Our research group had synthesized several kinds of Mo-based compounds, such
as HxMoO3, MoO2.5(OH)0.5, MoO3-x in recent years, and explored their electrochemical properties. In the
process, we noticed that the structure of Mo-based compounds is wide in tunability. There is no doubt that this
offers us a lot of opportunities, for example, heteroatom doping and hybridization with carbon-based
compounds, in the hope of changing the defects of the electrode material itself, such as their poor electrical
conductivity and pulverization during charge-discharge, so as to improve the battery performance.

References
[1] H. Wang, Y. Su, RSC Adv., 6(2016), 97749-97758.
[2] Y. Song, H. Wang, Z. Li, N. Ye, L. Wang, Y. Liu, Int. J. Hydrogen Energy, 9 (2015), 3613-3623.
[3] Y. Song, H. Wang, Z. Li, N. Ye, L. Wang, Y. Liu, RSC Adv., 5(2015), 16386-16393.

Figures
ac Electrical isolation
d
b e-
Li+
Lithiation Many cycles

Thick SEI formation

Li2O
(I) Without glucose
Electrical contact retained
e-
Lithiation Many cycles Li+

Pulverization

Li2O
(II) With glucose Confined-space lithiation/delithiation Self-aggregation in spatially-confined space

Figure 1:Spatially-confined electrochemical reactions of MoO3 nanobelts were designed rationally for reversible high
capacity by a green and simple vacuum drying method.

113
Junying Wang
Huinian Zhang, Junzhong Wang
CAS Key Laboratory of Carbon Materials, Institute of Coal Chemistry, Chinese Academy of Sciences,
Taiyuan 030001, P. R. China
wangjy@[Link]

Co-synthesis of atomic Fe and few-layer graphene towards

superior electrocatalysts of O2 and CO2
Abstract Large-scale synthesis of either single-metal atom catalyst or graphene from graphite direct exfoliation
at high yield is quite challenging. Here we demonstrate a scalable electrochemical approach to synthesize few-
layer graphene flakes and isolated Fe atoms at the same time. It is found that graphite could be expanded in
FeCl4- ionic liquid at a low potential of 2 V. Fe isolated onto graphene results from electrochemical reactions of
FeCl4--based intercalates. After annealing at the presence of nitrogen source, atomic Fe isolation is kept and
coordinated with nitrogen. The paintable atomic layer material exhibits superior oxygen reduction reaction
performance to Pt/C. The catalytic activity could be enhanced 30 times per gram and 100 times per metal atom,
if Fe-Nx/graphene is compared with Pt/C (20 wt.% Pt) on the basis of metal content. After changing the
synthesis conditions, atomic irons embedded in a new hierarchical carbon matrix were prepared which exhibits
superior properties in CO2 electroreduction. A highly selective conversion of CO2 to CO at low overpotential with
maximum Faradaic efficiency of ∼95% for 12 h was achieved.

References

[1] J. Wang, H. Zhang, C. Wang, Y. Zhang, J. Wang, H. Zhao, M. Cheng, A. Li, J. Wang, Energy Storage Mater.
2018, 1, 1.
[2] H. Zhang, J. Wang, Z. Zhao, H. Zhao, M. Cheng, A. Li, Y. Zhang, C. Wang, J. Wang, J. Wang, Green Chem.
2018, 20, 3521.

Figures
Cl2

[BMIM]FeCl4
Graphite

HCl melamine
Fe

+2V Cl- 800ºC N

FeCl4-

Fe
FeCl4-
(a) 2 (b)
Current density (mA cm-2)
Current density (mA cm-2)

400 rpm 625 rpm

1 0 900 rpm 1225 rpm
1600 rpm 2025 rpm
0 O2-saturated 2500 rpm
-3
N2-saturated
-1
-6
-2

-3 -9
0.0 0.4 0.8 1.2 0.0 0.4 0.8 1.2
Potential (V vs. RHE) Potential (V vs. RHE)
(c) (d) 0.003
Current density (mA cm-2)

0 after 10000 cycles

Current density (mA cm-2)

before 10000 cycles

0.000
-2
with 1 M CH3OH
-4 -0.003

without
-6 -0.006
CH3OH

-8 -0.009
0.0 0.4 0.8 1.2 0.0 0.4 0.8 1.2
Potential (V vs. RHE) Potential (V vs. RHE)

Figure 1: Co-synthesis of few-layer graphene and atomic Fe through electrochemical exfoliation of graphite in FeCl4- ionic
liquid. Electrochemical performances in O2-saturated 0.10 M KOH solution of N-Fe/G. (a) CV curves, (b) Rotating-disk
voltammograms at the different rotation rates. (c) Endurance tests. (d) CV curves without and with 1.0 M CH3OH.

114
Presenting Author (Lin Wang)
Co-Authors (Jin Wang, Cheng Guo, Xiaoshuang Chen)
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, China

wanglin@[Link]

Toward Sensitive Terahertz Detection Based on Two-

dimensional Materials
Abstract
Terahertz band, routinely defined with frequency ranged from 0.1THz to 10THz, has find its unique advantage
for extensive applications like remote sensing, biomedical imaging, security due to its non-invasive nature, and
located with the same energy as the rotational and vibrational modes in biomolecules. Even if it has been
lightened by the explosion of science and technological knowledge since the last decade, the terahertz band is
still considered as a "black hole" going from basic technological weakness, due to the scarcity of reliable source
as well as sensitive detectors. Photon detector reported to date has been rendered to be impossible to work at
wavelength far below the bandgap, and the efficiency decreased evidently when the wavelength is extended.
Therefore, it is still formidable challenge to achieve sensitive terahertz detection following the formerly well-
established rules. This work will introduce the interdisciplinary study of material science and terahertz photonics
recently in our group. Here, we review our recent outcomes of graphene-like two-dimensional materials with
peculiar properties being well suited to THz-oriented applications. Graphene, and transition-metal
dichalcogenides(TMDs) exhibiting novel quantum state of matter, due to their novel two-dimensional nature. We
have achieved antenna-integrated structure, allowing for both the electromagnetic coupling and electrical
interconnection. As benefitting from its small electronic heat capacity, the hot electron stays with high kinetic
energy leading to the prominent phenomenon of photoconductive. Photogalvanic effect of Bi 2Se3 compound is
observed at THz band, allowing the efficient direct photocurrent generation. All these results open up new
opportunities to achieve flexible detectors with high responsivity as well as fast response.

References

[1] Weiwei Tang, Antonio Politano, Cheng Guo, Wanlong Guo, Changlong Liu, Lin Wang, Xiaoshuang Chen, Wei Lu.
Ultrasensitive room-temperature terahertz direct detection based on a bismuch selenide topological insulator.
Adv. Funct. Mater. 1801786 (2018).
[2] Changlong Liu, Lin Wang, Xiaoshuang Chen, Jing Zhou, Weida Hu, Xinran Wang, Jinhua Li, Zhiming Huang,
Wei Zhou, Weiwei Tang, Gangyi Xu, Shao-Wei Wang, Wei Lu. Room-temperature photoconduction assisted by
hot-carriers in graphene for sub-terahertz detection. Carbon, 130, 233-240(2018).
[3] Changlong Liu, Lei Du, Weiwei Tang, Dacheng Wei, Jinhua Li, Lin Wang, Gang Chen, Xiaoshuang Chen, Wei Lu.
Towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors. NPG Asia
Materials, 10, 318-327 (2018).
[4] Lin Wang, Changlong Liu, Xiaoshuang Chen, Jing Zhou, Weida Hu, Xiaofang Wang, Jinhua Li, Weiwei Tang,
Anqi Yu, Shao-Wei Wang, Wei Lu. Toward sensitive room-temperature broadband detection from infrared to
terahertz with antenna-integrated black phosphorus photoconductor. Adv. Funct. Mater. 27, 1604414 (2017)

Figures

115
Figure 1: Schematic of MTM (metal-topological insulator-metal) terahertz detector, and frequency dependent response for
self-powered and bias modes.

116
Zhao Wang
Department of Physics, Guangxi University, Nanning 530004, P. R. China.
zw@[Link]

Low-temperature superlubricity of suspended graphene

We study the superlubric sliding of a nanometer-sized diamond-like-carbon tip over a suspended graphene
layer at different temperatures using molecular dynamics [1-5]. Dramatic effects of thermally- and mechanically-
induced rippling are demonstrated on the frictional properties of free-standing graphene. The tensile
deformation of graphene in response to the normal load is found to be beneficial for achieving low friction at
most of the studied temperatures. However, graphene at liquid-helium temperature exhibits an inverse trend,
the friction is even found to be negative at low-load. This abnormal behavior arises from the oscillation of
graphene in favor of superlubricity. The breakdown of superlubricity in suspended graphene is found to be
strongly correlated to the competition between the rippling and oscillation mechanisms.

References

[1] Z. Wang, to be published.

[2] Z. Wang and M. Devel, Phys. Rev. B 83 (2011) 125422.
[3] Z. Wang, Carbon 47 (2009) 3050.
[4] Z. Wang, W. Mook, C. Niederberger, R. Ghisleni, L. Philippe and J. Michler, Nano Lett. 12 (2012) 2289.
[5] W. Guo, Z. Wang and J. Li, Nano Lett. 15 (2015) 6582.

Figures

Figure 1: (a) Model setup for a DLC tip sliding over an infinite graphene layer that is suspended between two parallel
hypothetical supports. (b-d) Morphology of suspended graphene at different temperatures.

117
Qinwei Wei
Songfeng Pei, Wencai Ren, Hui-Ming Cheng

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of
Sciences, Shenyang 110016, P. R. China
2. School of Materials Science and Engineering, University of Science and Technology of China, 96 Jinzhai
Road, Hefei 230026, P. R. China

Contact: qwwei15s@[Link]
Green Controlled Synthesis of Graphene Oxide by Water
Electrolytic Oxidation

Graphene oxide (GO), as an important graphene derivative, has many unique properties and interesting
applications based on the chemical and physical properties of GO.[1] GO sheets are usually synthesized by
oxidizing graphite with mixtures containing strong oxidizing agents , acid solvent and other chemical reagent.[2]
However, the chemical oxidation encounter problems such as a complex preparing process, a long reaction
time, involving explosive chemicals and toxic gas, a large amount of heavy metal waste water, which are
obstacle for industrial preparation of graphene oxide. The electrochemical exfoliation of graphene has attracted
attention due to easy, fast and environmentally friendly nature for producing graphene.[3] However, the
electrochemical route of the synthesis of GO is not obtained so successful. We report a scalable, safe, ultrafast
and green electrochemical method to synthesize GO sheets, which involves electrochemical intercalation of
graphite by sulfur acid and subsequent water electrolytic oxidation. The pre-intercalation of graphite efficiently
inhibits oxygen evolution and consequently enables ultrafast water electrolytic oxidation of graphite within a few
seconds and the graphene oxide prepared is similar to those achieved by the chemical oxidation methods. We
also discuss the mechanism of controlled synthesis of graphene oxide and its application.[4] In addition, we will
report a one-step electrolytic method for synthesis of graphene quantum dots with blue fluorescent
characteristics in aqueous solution.

References

[1] D. R. Dreyer, S. Park, C. W. Bielawski, R. S. Ruoff, Chemical Society Reviews, 39(2010)228

[2] C. Galande, W. Gao, A. Mathkar, A. M. Dattelbaum, et al., Particle & Particle Systems Characterization,
31(2014)619
[3] S. Yang, M. R. Lohe, K. Müllen, et al., Advanced Materials, 28(2016)6213
[4] S. Pei, Q. Wei, K. Huang, et al., Nature Communications, 9(2018)145

118
Figures

Figure 1: Synthesis of EGO by water electrolytic oxidation. a, Schematic illustration of the synthesis process of EGO by
water electrolytic oxidation. b–e, Photos of the raw material and the products obtained at each step. b, FGP. c, GICP (blue
area) obtained after EC intercalation of FGP in 98 wt.% H2SO4 at 1.6 V for 20 min. d, Graphite oxide (yellow area)
obtained by water electrolytic oxidation of the GICP in 50 wt.% H2SO4 at 5 V for 30 s. e, Well-dispersed EGO aqueous
solution (5 mg·mL−1) obtained by sonication of the graphite oxide in water for 5 min. Scale bars in b-d:1mm

119
ZhengMing Wu2
Colin Rawlings2, Simon Bonanni2, Martin Spieser2, Philipp Mensch1, Siegfried
Kang1, Heiko Wolf1, Armin Knoll1
1IBM Research – Zurich, Saeumerstrasse 4, 8803 Rueschlikon, Switzerland
2SwissLitho AG, Technoparkstrasse 1, 8005 Zurich, Switzerland

wu@[Link]

Fabrication of sub-20 nm Metal Electrodes on 2D Materials

without a Charged Particle Beam
Abstract
Charged particle beams for the fabrication of devices comprising sensitive nanowires or 2D materials often lead
to unwanted influence or damage of electronic properties of the device [1]. Still, electron beam lithography
(EBL) in combination with lift-off is the most commonly used method to fabricate prototypes of such devices.

Thermal Scanning Probe Lithography (t-SPL) [2, 3] is an alternative mask-less lithography technique which is
also commercially available since 2014. It provides similar speed (up to 20 mm/s) and resolution (10 nm half-
pitch) as EBL, but without charged particles involved. Here, we present two recently developed lift-off
techniques for t-SPL that have enabled the creation of complex sub-20 nm Au, Pt and Ni structures and devices
without the usage of high energy charged particle beams [4].

Thermal Scanning Probe Lithography (t-SPL) uses a heated silicon tip to locally decompose and evaporate a
thermally responsive resist [5], usually PPA (polyphthalaldehye). A two-layer or three-layer process in
combination with wet or dry etching is demonstrated to create a suitable under-cut for lift-off, respectively.
During the t-SPL process the heated tip only influences the top PPA layer and leaves the underlying substrate
unharmed. This is in contrast to beam based technologies like EBL or Focused Ion Beam (FIB) where most of
the energy is actually deposited in the substrate and vacancies in graphene or other 2D materials can be
created.
We demonstrate the capabilities of the new t-SPL lift-off processes by fabrication of transistors with improved
performance (See Figure1). 50 nm wide fingered top gates have been fabricated with nanometer overlay
accuracy. The superb switching behavior of the transistor shows the absence of trapped charge in the gate
oxide, which usually occurs during EBL fabrication of such devices and prevents proper device operation.

ACKNOWLEDGMENTS:
We thank P. Mensch and S. Karg for providing InAs nanowires and performing the transport measurements, U.
Drechsler for cantilever fabrication, and R. Allenspach and W. Riess for fruitful discussions. The research
leading to these results received funding from European Union’s Seventh Framework Program FP7/2007-
2013 under Grant Agreement No. 318804 (SNM). .

References

[1] S. F. Karg, V. Troncale, U. Drechsler, P. Mensch, P. Das Kanungo, H. Schmid, V. Schmidt, L. Gignac, H. Riel, B.
Gotsmann, Nanotechnology 25 (2014), 305702.
[2] D. Pires, J.L. Hedrick, A. de Silva, J. Frommer, B. Gotsmann, H. Wolf, M. Despont, U. Duerig, A.W. Knoll,
Science 328 (2010), 732-735
[3] P.C. Paul, A.W. Knoll, F. Holzner, M. Despont, U. Duerig, Nanotechnology 22 (2011), 275306.
[4] H. Wolf, C. Rawlings, P. Mensch, J.L. Hedrick, D.J. Coady, U. Duerig and A. Knoll, J. Vac. Sci. Technol. B 33
(2015), 02B102.

120
[5] C. Aso, S. Tagami and T. Kunitake, J. Polym. Sci. A-1 (1969), 497-511.

Figures

Figure 1: a) The gate electrodes of InAs nanowire transistor fabricated using the tSPL and lift-off. b) Switching behavior of
the transistor. c) Schematic of the InAs nanowire transistor.

121
Zhenyuan Xia1,2
Catia Arbizzani3, Meganne Christian4, Vittorio Morandi4, Massimo Gazzano1,
Vincenzo Palermo1,2
1Istituto per la Sintesi Organica e la Fotoreattività - Consiglio Nazionale delle Ricerche, via Gobetti 101,
40129 Bologna, Italy
2Industrial and Materials Science, Chalmers University of Technology, Hörsalsvägen 7B, 41258 Goteborg,
Sweden
3 Dipartimento di Chimica “Giacomo Ciamician”, University of Bologna, via Selmi 2, Bologna, 40126, Italy
4Istituto per la Microelettronica e Microsistemi - Consiglio Nazionale delle Ricerche, via Gobetti 101, 40129
Bologna, Italy

zhenyuan@[Link]

Three-Dimensional Multilayer Graphene-Fe2O3 Foam

Composites and Their Application in Energy Storage

The use of electrochemistry for the preparation of graphene and its derivatives has been
intensively studied over the past decade. [1-4] In this work, we demonstrate a unique
strategy for the fabrication of multilayer nano-porous iron oxide and graphene structure on
three-dimensional graphene foam (GF). The combination of Fe2O3 and GF takes the
advantage of the high energy storage capacity of the former and the good conductivity of
the former structure. Precise control of the Fe2O3 mass loading was achieved by an
electrodeposition approach, which produced nano-wall arrays. The favorable attraction of
electrochemically exfoliated graphene oxide (EGO) to Fe2O3 facilitates the uniform coating
of EGO on the surface of iron oxide. Alternating multilayer structures of EGO and Fe2O3
were realized thanks to the unique properties of EGO as both a spacer and current collector
(figure 1). The composite could be used directly as a binder-free anode in Li-ion batteries,
demonstrating the viability of this approach for high yield and scalable production of
graphene/metal oxide composites.

References

[1] S. Yang, et al., Adv. mater, 28 (2016) 6213

[2] Y. Xia, V. Morandi, V. Palermo, et al., Ad. Funct. Mater, 23 (2013) 4684
[3] Z. Y. Xia,V. Palermo et al., Carbon, 84 (2015) 254
[4] Z. Y. Xia,V. Palermo et al., FlatChem, 3 (2017) 8

122
Figures

Figure 1: a) Schematic illustration of the multilayer EGO-Fe2O3-GF architecture; b) SEM image of the corresponding EGO-
Fe2O3-GF sample

123
Xing Xin
Zeyuan Fei, Teng Ma, Long Chen, Mao-Lin Chen, Chuan Xu, Xitang Qian, Dong-
Ming Sun, Xiu-Liang Ma, Hui-Ming Cheng, Wencai Ren
1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of
Sciences, Shenyang 110016, P. R. China
2. University of Chinese Academy of Sciences, Shenyang 110016, P. R. China.

Contact: xxin13b@[Link]

Circular Graphene Platelets with Grain Size and Orientation

Gradients Grown by Chemical Vapor Deposition

Abstract
Materials that have a continuous structure gradient have unique properties and promising applications that are
different from conventional homogenous materials. For instance, the structure gradient in bamboo makes it an
interesting material with a hard surface but a soft interior. The gradient chemical composition makes the beak of
the squid one of the hardest and stiffest organic materials. [1] Learning from nature, many materials with unique
properties have been developed by designing a structure or composition gradient.[2,3] Although many such
three-dimensional bulk materials have been developed, no two-dimensional (2D) materials have been achieved.
Graphene as a typical representative of two-dimensional (2D) materials has attracted great attention.[4,5] Recent
extensive studies show that grain boundary has important influences on the electrical, mechanical, thermal and
chemical properties of graphene.[6-9] Therefore, the graphene platelets with grain structure gradient are
expected to have gradient properties, and therefore some potential interesting applications as the cases in 3D
materials. Here, we have developed a chemical vapor deposition (CVD) method, using a tungsten (W) foil on
which was deposited a very thin layer of copper (Cu) as a substrate, to grow circular graphene platelets with
gradients in grain size and orientation distribution in the radial direction.[10] It was found that the substrate
undergoes continuous loss of Cu and the formation of a huge number of small tungsten carbides crystals with
different orientations during growth. Because of the different interactions and growth behaviors of graphene on
Cu and tungsten carbide, such substrates cause the formation of grain size and orientation gradients through
the competition of Cu and tungsten carbide in the dominant role in graphene growth. Our findings not only add a
new member to the large family of 2D materials but also provide a general strategy to synthesize other 2D
materials with a grain structure gradient by substrate design, which opens up possibilities for investigating the
unique properties and applications of such materials.

References

[1] A. Miserez, T. Schneberk, C. Sun, F. W. Zok, J. H. Waite, Science, 319 (2008) 1816-1819.
[2] T. Ishikawa, H. Yamaoka, Y. Harada, T. Fujii, T. Nagasawa, Nature, 416 (2002) 64-67.
[3] T. H. Fang, W. L. Li, N. R. Tao, K. Lu, Science, 331 (2011) 1587-1590.
[4] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov,
Science, 306 (2004) 666-669.
[5] A. K. Geim, Science, 324 (2009) 1530-1534.
[6] R. Grantab, V. B. Shenoy, R. S. Ruoff, Science, 330 (2010) 946-948.
[7] A. Bagri, S. P. Kim, R. S. Ruoff, V. B. Shenoy, Nano Lett., 11 (2011) 3917-3921.
[8] Q. Yu, L. A. Jauregui, W. Wu, R. Colby, J. Tian, Z. Su, H. Cao, Z. Liu, D. Pandey, D. Wei, T. F. Chung, P. Peng,
N. P. Guisinger, E. A. Stach, J. Bao, S.-S. Pei, Y. P. Chen, Nat. Mater., 10 (2011) 443-449.

124
[9] K. Kim, H.-B.-R. Lee, R. W. Johnson, J. T. Tanskanen, N. Liu, M.-G. Kim, C. Pang, C. Ahn, S. F. Bent, Z. Bao,
Nat. Commun., 5 (2014) 4781.
[10] X. Xin, Z. Fei, T. Ma, L. Chen, M.-L. Chen, C. Xu, X. Qian, D.-M. Sun, X.-L. Ma, H.-M. Cheng, W. Ren, Adv.
Mater., 29 (2017) 1605451.

Figures

Figure 1: Growth of circular graphene platelets with grain size and orientation gradients. (a) Typical scanning electron
microscopy images of graphene islands grown on a W-Cu substrate with a flow rate of 5.0 sccm CH4 and 300 sccm H2 for
20, 40, 60, and 90 min, showing the morphology evolution of the islands from hexagonal to circular. (b) Optical image of a
circular graphene island transferred onto an SiO2/Si substrate. (c) A transmission electron microscopy (TEM) image of a
circular graphene island and the false-color, superimposed dark-field TEM images of regions 2-4. (d) Selected area
electron diffraction patterns taken from the four regions 1-4 in (c). The regions marked 1 to 4 were selected from the
center to the edge of a circular graphene island. The above results indicate that the graphene island has a grain size and
an orientation-dispersed angle gradient from the center to the periphery.

125
Chuan Xu
Zhibo Liu, Ning Kang, Hui-Ming Cheng, Wencai Ren
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of
Sciences, Shenyang 110016, China
cxu11s@[Link]

CVD-Grown High-Quality Ultrathin Mo2C Crystals and Their

Vertical Heterostructures with Graphene
Transition metal carbides (TMCs) are a large family of materials that combine the properties of ceramics and
metals. High-quality 2D TMCs are essential for investigating new physics and properties in 2D limit. However,
the commonly used chemical etching method can only produce functionalized 2D TMC nanosheets with
abundant defects and functional groups, known as MXenes. Recently, we developed a universal CVD method
[1] to fabricate large-area high-quality ultrathin 2D TMC crystals. The obtained α-Mo2C crystals are a few
nanometres thick and over 100 µm in size. They show 2D characteristics of superconducting transitions;
moreover, the superconductivity is also strongly dependent on the crystal thickness. Further studies show that
2D α-Mo2C crystals have unique domain structure with rotational-symmetry and well-deﬁned line-shaped
domain boundaries, and the domain boundaries have a significant influence on 2D superconductivity [2]. We
also realized the direct growth of high-quality graphene/2D superconducting α-Mo2C vertical heterostructures
with uniformly well-aligned lattice orientation and strong interface coupling by a two-step CVD process [3]. The
strong interface coupling leads to a phase diagram of superconducting transition with multiple voltage steps
being observed in the transition regime. Furthermore, we demonstrated the realization of highly transparent
Josephson junction devices based on these heterostructures.

References

[1] C. Xu, et al., Nature Materials, 11 (2015) 1135-1141

[2] Z. Liu, et al., Nano Letters, 7 (2016) 4243-4250
[3] C. Xu, et al., ACS Nano, 6 (2017) 5906-5914

Figures

Figure 1: (a) Typical optical image of ultrathin α-Mo2C crystals on a Cu/Mo substrate, showing different regular shapes.
(b) Atomic-level HAADF-STEM image of an α-Mo2C sheet, showing highly crystalline quality.

126
Dewu Yue
Won Jong Yoo
SKKU Advanced Institue of Nano-Technology(SAINT), Sungkyunkwan University(SKKU), 2066 Seobu-ro,
Jangan-gu, Suwon, Gyeonggi-do, 16419 Korea.

yoowj@[Link]

High Performance Two-dimensional Semiconductors

established by using a Benzyl Viologen Interlayer
Abstract
Electrical performance of two-dimensional (2D) semiconductor devices are limited by the properties of the
electrical contact between the electrode and the semiconductor surface, requiring good Ohmic contact [1][2].
Solution processed polymeric contacts have been widely used in organic semiconductors, but not in 2D
semiconductors until now. We demonstrated the fabrication of solution-processed polymeric contacts for the
preparation of high mobility MoS2, MoTe2, and BP (black phosphorous) FETs with significantly lowered contact
resistance. Ohmic contacts were achieved and produced 4-, 16-, and 13-fold increases in the effective
mobilities, respectively, compared to the respective materials alone. Our devices exhibit excellent stability in
both ambient and vacuum. Our strategy provides a promising method for obtaining Ohmic-contact 2D
semiconductor devices as well as 2D logical integrated circuits.

References

[1] Yue, D. W.; Ra, C. H.; Liu, X. C.; Lee, D. Y.; Yoo, W. J., Nanoscale, 7(2015) 825-831(Arial Narrow 11)
[2] Yue, D.; Lee, D.; Jang, Y. D.; Choi, M. S.; Nam, H. J.; Jung, D. Y.; Yoo, W. J., Nanoscale, 8 (2016) 12773-12779

127
Muhammad Zahid1
Francesco Bonaccorso2, Antonio Esau Del Rio Castillo2, Athanassia Athanassiou1
1Smart Materials group, Istituto Italiano di Tecnologia, Via Morego 30 16163, Genova, Italy
2Graphene labs, Istituto Italiano di Tecnologia, Via Morego 30 16163, Genova, Italy

[Link]@[Link]
[Link]@[Link]
[Link]@[Link]

Effect of 2D Nanomaterials on Gas Permeability and

Mechanical Properties of Thermoplastic Polyurethane
Nanocomposites
Abstract: Thermoplastic polyurethanes (TPU) are highly versatile polymers as they close the gap between
rubber and hard thermoplastics. They possess a unique combination of properties, such as, high wear
resistance, good resistance to oils, greases and solvents, and extremely good weather stability, combined with
high elasticity. However, in their neat forms, they are unsuitable for packaging and storage applications due to
their high gas permeability. In the past, many efforts have been dedicated to improve gas barrier properties in
TPU nanocomposites by incorporating different 2D nanomaterials such as nanoclays [1], graphene oxides [2]
and graphene nanoribbons [3]. The incorporated 2D nanofillers create a tortuous path for gas molecules within
the polymer matrix [4], thus making it difficult for gas to diffuse and get transported across the membranes, as
illustrated in Figure 1. In particular, graphene filled TPU nanocomposites exhibit substantial improvements in
gas barrier properties as well as mechanical, electrical and thermal properties. Graphene, with impermeable 2D
structure and high aspect ratio, provides superior gas barrier properties in the prepared nanocomposites as
compared to its spherical counterparts (like nanoparticles) [4]. In this study, we investigate the effect of different
aspect ratios of graphene on the gas barrier properties of the TPU nanocomposites, where the nanofillers have
been incorporated. TPU nanocomposites were prepared by solvent casting technique, using different types of
graphene powders dispersed into chloroform, with the help of sonication. The as prepared TPU
nanocomposites demonstrated significant improvements in the gas barrier properties with respect to the pure
polymer matrix, which depend on their aspect ratios. In particular, a reduction of 70 % in the gas permeability
was observed at 6.0 wt.% concentration of graphene having lateral size and thickness of 415 nm and 5.3 nm,
respectively. Their corresponding aspect ratio is 78.30. The normalized gas permeability rate was reduced from
144,846.44 [Link]/m2/day for the neat TPU films, to 42,508.53 [Link]/m2/day at 6.0 wt.% graphene
mass loading. This can be attributed to the good dispersion of the graphene flakes into chloroform solvent [5]
and packing of the graphene flakes into TPU nanocomposites. Likewise, mechanical properties (Young’s
modulus) of the as prepared nanocomposites were improved at similar mass fractions. In particular the Young’s
modulus was increased from 5.16 MPa (for neat TPU) to 11.84 MPs making the TPU nanocomposites more
resistant to deformations. The prepared nanocomposites have been also characterized using SEM, TEM and
Raman spectroscopy. Future work will involve preparation of solvent-free TPU/graphene nanocomposites with
enhanced properties using twin screw extruder and a pelletizer.

References

[1] S. Pandey, K. K. Jana, V. K. Aswal, D. Rana and P. Maiti, Applied Clay Science, 146 (2017) 468-474.
[2] H. Kim, Y. Miura and C. W. Macosko, Chemistry of Materials, 22 (2010) 3441-3450.
[3] C. Xiang, P. J. Cox, A. Kukovecz, B. Genorio and et al., ACS Nano, 7 (2013) 10380-10386.
[4] Y. Cui, S.I. Kundalwal, S. Kumar, Carbon, 98 (2016) 313-333.
[5] D. W. Johnson, B. P. Dobson and K. S. Coleman, Current Opinion in Colloid and Interface Science, 5 (2015)
367-382.

128
Figures

Gas molecules Gas molecules

Unfilled Filled
polymer polymer

Figure 1: Mechanism of gas molecule’s absorption and transportation through a neat polymer film and graphene filled
polymer nanocomposite.

129
Jian Zhang
Zheling Zhang, Yong Hu, Cong Xu, Shuyao Zhang
College of Material Science & Engineering, Guilin University of Electrical Technology, Guilin 541004, China

jianzhang@[Link]

Graphene quantum dots as interface materials for

organic photovoltaic cells
Organic photovoltaic cells (OPVs) represent an exciting class of renewable energy technology, and are
under intensive investigation in both academic institutions and industrial companies due to their potential to
enable mass production of flexible and cost-effective devices through roll-to-roll techniques. The proper choice
of interface materials is a must for highly efficient and stable OPV devices and has become a significant part of
the OPV research today. Interface materials are either non-conducting, semiconducting or conducting layers
which not only provide selective contacts for carriers of one sort, but can also determine the polarity of OPV
devices, affect the open-circuit voltage, and act as optical spacers or protective layers.
Owing to their unique two-dimensional structure, and functionalization-induced tunable electronic
structures, graphene and its derivatives have been used as a new class of efficient interface materials in OPVs.
Highly efficient and stable OPVs have been fabricated with graphene and its derivatives as interface materials.
After a brief introduction of OPVs, the progress in interface materials and interface engineering at the both
anode and cathode in OPVs and PSCs in my group will be introduced. At anode interface, the work function of
graphen oxide (GO) is improved by O2 plasma treatment or photochemical chlorination. Due to high
transparence and high work function of GO derivatives, the power conversion efficiency of OPVs was improved
significantly when the GO derivatives with higher work function was used as anode interfacial materials.

Acknowledgement: This research was financially supported by the National Natural Science Foundation of China
(61564003), and the Guangxi Natural Science Foundation (2015GXNSFGA139002), and the Guangxi Bagui Scholar
program.

References

[1] Zhou, L.; Xu, Y.; Yu, W.; Guo, X.; Yu, S.; Zhang, J.; Li C.* J. Mater. Chem. A, 2016, 4, 8000.
[2] Fu, P.; Huang, L.; Yu, W.; Yang, D.; Liu, G.; Zhou, L.; Zhang, J.;* Li, C.* Nano Energy 2015, 13, 275.
[3] Yang, D.; Fu, P.; Zhang, F.; Wang, N.; Zhang, J.;* Li, C.* J. Mater. Chem. A 2014, 2, 17281.
[4] Yang, D.; Yu, W.; Zhou, L.; Zhang, J.;* Li, C.* Adv. Energy Mater. 2014, 4, 1400591.
[5] Yang, D.; Zhou, L.; Chen, L.; Zhao, B.; Zhang, J.;* Li, C.* Chem. Comm. 2012, 48, 8078.

Figures

130
Figure 1:Chlorinated GO and the performance of organic solar cells

131
1,2 Shaolin Zhang
2Thuy Hang Nguyen, 2Woochul Yang
1Advanced Institute of Engineering Science for Intelligent Manufacturing, Guangzhou University, Guangzhou
510006, China
2Department of Physics, Dongguk University, Seoul 04620, Korea

wyang@[Link]

Preparation and mechanism of molybdenum diselenide

nanosheets for ethanol detection
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) as alternative sensor materials of conventional
metal oxides have attracted much attention recently [1,2]. These materials present enormous surface/volume
ratio and unusual electronic, optical, and magnetic properties in the form of single- or few-layer, and have
accelerated the development of a diverse range of applications including gas sensor [3]. Among TMDCs,
molybdenum diselenide (MoSe2), as an emerging semiconducting material has rarely been investigated for
sensor application. Late et al. firstly investigated the mechanically exfoliated single-layer MoSe2 and
demonstrated its high sensing performance to ppm-level NH3 gas [4]. Very recently Baek et al. also developed a
MoSe2 multilayer based field-effect transistor (FET) for detecting NO2 gas [5]. However, the sensing mechanism
of ultrathin MoSe2 is still ambiguous to date.

In this study, MoSe2 nanosheets thin film gas sensor was firstly fabricated and its sensing potential to ppm-level
ethanol vapor at low operating temperature was investigated. Ultrathin MoSe 2 nanosheets were prepared in
large scale through a facile liquid-phase exfoliation method using low boiling temperature solvent. The
exfoliated MoSe2 nanosheets exhibited high purity and crystallinity with few atomic layer thickness. Systematical
gas sensing tests demonstrated that MoSe2 nanosheets based thin film could be utilized as ethanol gas sensor
with linear response, quick recovery, and good repeatability at 90oC, as shown in Figure 1. The sensing
mechanism of MoSe2 toward ethanol was investigated based on first principle calculation. The adsorption
behavior of ethanol molecule on MoSe2 surface was revealed in light of adsorption orientation, adsorption
energy, charge transfer, projected electronic density of state, and molecular orbital. The calculation well
matched with experimental results. It is found the quick and complete recovery of MoSe 2 nanosheets sensor
were benefited by the appropriate physical interaction between ethanol and MoSe 2 surface. This finding offers a
competitive option instead of conventional graphene sensor for ethanol gas detection at low temperature.

References

[1] B. L. Li, J. P. Wang, H. L. Zou, S. Garaj, C. T. Lim, J. P. Xie, N. B. Li, and D. T. Leong, Adv. Funct. Mater., 26
(2016) 7034.
[2] J. H. Cha, S. J. Choi, S. Yu, and I. D. Kim, J. Mater. Chem. A, 5 (2017) 8725.
[3] W. Choi, N. Choudhary, G. H. Han, J. Park, D. Akinwande, and Y. H. Lee, Mater. Today, 20 (2017) 116.
[4] D. J. Late, T. Doneux, and M. Bougouma, Appl. Phys. Lett., 105 (2014) 233103.
[5] J. Baek, D. Yin, N. Liu, I. Omkaram, C. Jung, H. Im, S. Hong, S. M. Kim, Y. K. Hong, J. Hur, Y. Yoon, and S. Kim,
Nano Res., 10 (2017) 1861.

132
Figures

Figure 1: Typical sensing response curves of MoSe2 nanosheets sensor toward 20 ppm ethanol with different operating
temperatures (left). AFM image of as-prepared MoSe2 nanosheet (upper right). Adsorption model of ethanol molecule on
MoSe2 surface (lower right).

133
Zheng Zhang
Qingliang Liao, Zhuo Kang, Yue Zhang*
University of Science and Technology Beijing, Xueyuan Road 30#, Haidian District, Beijing, China.
yuezhang@[Link]

Defects engineering for monolayer MoS2 homojunction construction

Due to its reduced dimensions, chemical stability, proper direct band gap, highly efficient light absorption and
piezoelectricity1, two-dimensional (2D) molybdenum disulfide (MoS2) has the potential in developing next-
generation flexible, transparent and wearable nanodevices. As an example, many researchers have focused on
creating MoS2 homojunction, the fundamental building block of modern electronics. Due to its identical crystal
structure and continuous band alignments in the interface, the MoS2 homojunctions display ideal current
rectifying behavior and highly efficient photoresponse than those of heterojunctions. In the homojunction
construction, it is the key issue to control the carrier concentration and work function in MoS 2. However, by
utilizing the conventional methods of chemical doping and thermal annealing, the monolayer MoS 2
homojunction shows instability and poor performance2,3,4.
Here, a novel homojunction construction strategy is proposed, in which the sulfur vacancies are healed
spontaneously by the sulfur adatom clusters on MoS2 surface through a poly(styrenesulfonate) (PSS)-induced
hydrogenation process. The electron concentration of the as-healed MoS2 dramatically decreased, leading to
work function enhancement up to ~58 meV. This strategy is then employed to fabricate a high performance
lateral monolayer MoS2 homojunction, which presents an ideal current rectifying behavior. Distinguished with
previous unstable chemical doping, the lattice defects induced local fields are eliminated during the process of
the sulfur vacancy self-healing, which largely improve the performance of MoS 2 homojunction. These claims are
all supported by the experimental results, including Kelvin probe force microscopy (KPFM) and the
photodetection performance. Our findings demonstrate a promising strategy in 2D materials electronic structure
modulation for the development of the next-generation electronics and optoelectronics.

References
[1] Qi J, et al. Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum
disulfide piezotronics. Nat. Commun. 6, 7430 (2015).
[2] Li HM, et al. Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide. Nat.
Commun. 6, 6564 (2015).
[3] Choi MS, et al. Lateral MoS2 p-n junction formed by chemical doping for use in high-performance
optoelectronics. ACS nano 8, 9332-9340 (2014).
[4] Jin Y, Keum DH, An SJ, Kim J, Lee HS, Lee YH. A Van Der Waals Homojunction: Ideal p-n Diode Behavior in
MoSe2. Adv. Mater. 27, 5534-5540 (2015).

Figures

Figure (a) schematic diagram of the stacked bilayer homojunction, (b) optical image, (c) PL mapping, (d) low temperature
PL spectrum.

134
Zheng Jian
Institute of Chemistry Chinese Academy of Sciences

zhengjian@[Link]

Single Layer TMD Fabrication and Rolling up into Nanoscrolls

Transition metal dichalcogenides like molybdenum disulphide have attracted great interest as two-dimensional
materials beyond graphene due to their unique electronic and optical properties. The scalable fabrication of
atomically thin transition metal dichalcogenides is vital for industrial applications. We demonstrated a high-yield
exfoliation process using lithium, potassium and sodium naphthalenide where an intermediate ternary LixMXn
crystalline phase (X=selenium, sulphur, and so on) is produced. Using a two-step expansion and intercalation
method, we produce high-quality single-layer molybdenum disulphide sheets with unprecedentedly large flake
size, that is up to 400 mm2. Single-layer dichalcogenide inks prepared by this method may be directly inkjet-
printed on a wide range of substrates.
The self-assembly of transition metal dichalcogenides flakes, as an emerging area, is largely unexplored. High-
quality nanoscrolls rolled up from chemical vapour deposition-grown transition metal dichalcogenides flakes
were demonstrated. Based on the internal open topology, nanoscrolls hybridized with a variety of functional
materials have been fabricated, which is expected to confer transition metal dichalcogenides nanoscrolls with
additional properties and functions attractive for potential application.

References

[1] Jian Zheng, et al, [Link]., 5 (2014) 2995.

[2] Jian Zheng, et al, [Link]., 9 (2018) 1301

Figures

Figure 1: a, Optical image of CVD-grown MoS2 monolayer flakes on a SiO2/Si substrate. b, Optical image of MoS2
nanoscrolls on a SiO2/Si substrate. c, SEM images of MoS2 nanoscrolls. d, TEM images of MoS2 nanoscrolls. Inset:
High-magnification images of sidewalls of MoS2 nanoscrolls. (Scale bars, 500 μm in a, 100 μm in b, 5 μm in f and 2 nm for
the inset).

135
ZWang

Tongyao Zhang, Mei Ding, Baojuan Dong

Institute of metal research , Chinese academy and sciences, No.72 Wen hua Road, Shenyang City, Liaoning
Province

zwang16s@[Link]

Electric-field control of magnetism in a few-layered van der

Waals ferromagnetic semeconductor

Manipulating a quantum state via electrostatic gating has been of great importance for many model systems in
nanoelectronics. Until now, however, controlling the electron spins or, more specifically, the magnetism of a
system by electric field tuning has proven challenging1–4. Recently, atomically thin magnetic semiconductors
have attracted significant attention due to their emerging new physical phenomena5–13. However, many issues
are yet to be resolved to convincingly demonstrate gate-controllable magnetism in these two-dimensional
materials. Here, we show that, via electrostatic gating, a strong field effect can be observed in devices based on
few-layered ferromagnetic semiconducting Cr2Ge2Te6. At different gate doping, micro-area Kerr measurements
in the studied devices demonstrate bipolar tunable magnetization loops below the Curie temperature, which is
tentatively attributed to the moment rebalance in the spin-polarized band structure. Our findings of electric-field-
controlled magnetism in van der Waals magnets show possibilities for potential applications in new-generation
magnetic memory storage, sensors and spintronics.

References

[1] 1. Chappert, C., Fert, A. & Nguyen Van Dau, F. Nat. Mater. 6, 813–823 (2007).
[2] 2. Matsukura, F., Tokura, Y. & Ohno, H. Nat. Nanotech. 10, 209–220 (2015).
[3] 3. Lin, M.W. et al. J. Mater. Chem. C 4, 315–322 (2016).
[4] 4. Xing, W. et al. 2D Mater. 4, 024009 (2017).
[5] 5. Huang, B. et al. Nature 546, 270–273 (2017).
[6] 6. Gong, C. et al. Nature 546, 265–269 (2017).
[7] 7. Wang, Z. et al. Preprint at [Link] (2018).
[8] 8. Klein, D. R. et al. Science 360, 1218–1222 (2018).
[9] 9. Song, T. C. et al. Science 360, 1214–1218 (2018).
[10] 10. Sivadas, N., Daniels, M. W., Swendsen, R. H., Okamoto, S. & Xiao, [Link]. Rev. B 91, 235425 (2015).
[11] 11. Mounet, N. et al. Nat. Nanotech. 13, 246–252 (2018).
[12] 12. Bonilla, M. et al. Nat. Nanotech. 13, 289–293 (2018).
[13] 13. Arai, M. et al. Appl. Phys. Lett. 107, 103107 (2015)

136
Figures

Figure 1: Kerr measurement of BN-encapsulated 3.5 nm Cr2Ge2Te6 sample with solid Si gate. a, I–V characteristics of the
same device with five different fixed Si gate voltages measured at 40 K. b, Field-effect curves at 40 K with Vds = - 5 and +
5 V (blue and red, respectively).c,d, Kerr angle measured at 40 K for negative (c) and positive (d) gate voltages
respectively.

137
138
Jong-Guk Ahn
Younghee Park, Hyunseob Lim
Department of Chemistry, Chonnam National University (CNU), Gwangju 61186, Republic of Korea
[Link]@[Link]

Surface Enhanced Raman Spectroscopy at Nanogap between

Au Nanoparticles Separated by 2D hexagonal Boron Nitride
The controlled formation of hot spot formed at nanogap between metal nanoparticles in surface enhanced Raman
spectroscopy (SERS), since it can enhance the Raman signal of target molecule dramatically. Therefore, various
methods have been attempted to produce the nanogap, and several approaches even enable the single molecule
level detection by SERS. Nevertheless, the precise control of nanogap is not only technically difficult, but also the
reproducibility is not good. In addition, the most of approaches is not appropriate to practical applications. Herein,
we present a new approach to produce nanogaps between Au nanoparticles (Au NPs) separated with hexagonal
boron nitride (h-BN) by making a Au NPs/h-BN/Au NPs heterostructure. In previous study, we have demonstrated
that h-BN can be a good wrapping layer for SERS nanoparticle, which is used as a two-dimensional insulator
material. The Au NPs/h-BN/Au NPs heterostructure can be manufactured by introducing additional Au NPs onto
h-BN/Au NP substrate. The theoretical simulation has been carried out by using Finite-Difference Time-Domain
(FDTD) method to visualize the electromagnetic field amplification at Au NPs/h-BN/Au NPs nanogap, which
reveals that the stronger electromagnetic field can be generated at the nanogap structure of AuNP/h-BN/AuNPs.
We believe that our results provide the critical insight for the nanogap based SERS applications by using the
heterostructures of two-dimensional insulators and metal nanoparticles.

References

[1] Katrin Kneipp, et al. Phys. Rev. Lett., 78 (1997) 1667

[2] Jian-Feng Li, et al. Nature, 464 (2010) 392
[3] Gwangwoo Kim, et al. ACS Nano, 10 (2016) 11156

Figures

Figure 1. Schematic illustration of Au nanoparticles/h-BN/Au nanoparticles heterostructure

139
Gold nanoparticle

vertical plane
Figure 2. Finite-Difference Time-Domain simulation results of Au nanoparticles/
h-BN/Au nanoparticles structure.

140
Yongzhong Wu
Zizheng Ai, Dong Shi
State Key Lab of Crystal Materials, Shandong University, Jinan 250100, P. R. of China
wuyz@[Link]

BNNS@Ti3C2 Intercalation Electrocatalyst for Hydrogen

Evolution Reaction
Electrocatalysts with advantages of stability, high efficiency and noble-metal-free feature are in urgent need for
water splitting [1-2]. Herein, we firstly utilized the intercalation method to incorporate Ti3C2 into interlayers of
boron nitride nanosheet (BNNS) and fabricated a novel BNNS@Ti3C2 intercalation electrocatalyst. Theoretical
calculation proves that the interface has transformed from semiconducting property to metallicity in the unique
intercalation structure. The rich active sites of Ti3C2 are better protected as well as serve as a bridge to connect
different layers of BNNS [3]. The as-obtained composite possesses the improved conductivity and abundant
catalytic active sites which are useful for enhancing electrocatalytic performance. As a non-noble-metal
electrocatalyst, the sample shows an outstanding electrocatalytic activity and excellent long-term durability.
BNNS@Ti3C2 is used as the electrocatalyst for the first time without noble-metal assistance. This work
demonstrates that the layered 2D materials can serve as a promising electrocatalyst by forming intercalation
structure.

References

[1] [D. Merki, X. Hu, Energy Environ. Sci. 4 (2011) 3878–3888.

[2] J. Yang, H.S. Shin, J. Mater. Chem. A 2 (2014) 5979–5985.
[3] X. Li, X. Hao, M. Zhao, Y. Wu, J. Yang, Y. Tian, G. Qian, Adv. Mater. 25 (2013) 2200-2204.
Figure 1

Figure 1: Schematic illustration for the synthesis of BNNS@Ti3C2.

141
Atsushi Ando
National Institute of Advanced Industrial Science and Technology (AIST),
Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

atsushi-ando@[Link]

Morphology and electrical studies

on NaCl-assisted CVD synthesis of WS2
Atomically thin two-dimensional materials such as transition metal dichalcogenides (TMDC), have been
attracted a great deal of attention due to their electronic properties [1]. For the applications of various sensors
and low power field effect transistors (FETs), thin films growth of TMDC with large area and uniformity is
essential. Recently, alkali-metal halide assisted chemical vapor deposition (CVD) growth of TMDC have been
attracted attention because alkali metal halide can reduce the density of nuclei and promote two-dimensional
lateral growth [2]. In this work, I report a CVD growth of WS2 with the assistant of NaCl and investigate the
morphology and electrical characteristics of the CVD-grown WS2.
The NaCl-assisted CVD experimental setup is shown in Fig. 1(a). WO3 (99.99 %) precursor (~0.02 g) with
one drop of 2N NaCl (~0.04 g) was put in the center of the one-zone CVD furnace. Sulfur (99.99 %) precursor
(~0.5 g) was put 5 cm away from the end of the furnace and was heated with a heating tape independently. Two
285 nm SiO2 / p++-Si (100) substrates with SiO2 surfaces facing each other were placed about ~1 cm
downstream from the WO3 precursor. One 285 nm SiO2 / p++-Si (100) substrates with SiO2 surfaces facing
down was also placed just above the WO3 precursor. The CVD growth was performed at atmospheric pressure
using 35-40 sccm 3% H2/Ar as the carrier gas. Typical temperature programming process of WO3 and S
precursors during WS2 growth is shown in Fig. 1(b).
The size of the CVD-grown WS2 was estimated by optical microscope images (Fig. 2(a)). Thickness and
surface morphology of the WS2 were measured by atomic force microscope (AFM: Digital Instruments,
Nanoscope IIIa) measurements (Figs. 2(b) and 2(c)). The quality of the WS2 was evaluated by Raman spectra
compared to mechanically exfoliated bulk WS2 (Fig. 3(a)). Two different types of WS2 deposition were observed:
one was normal triangular shape WS2 and another was WS2 in a etched pit. The existence of the pits suggests
that etching of SiO2 occurred during the WS2 formation process [3].
For electrical characterizations, source and drain electrodes were formed on the as-grown WS2 by the
standard photolithography process with AZ5214E photoresist (Clariant). Cr/Au (10/50 nm), Ti/Au (10/50 nm)
and Au (60 nm) metal electrodes were examined. Before metal depositions, the surfaces of the WS2 were
modified by O2 plasma treatment (5 s) performed with a resist strip system (Diener electronics, Nano). The
device channel lengths were 2000-6000 nm. Figure 3(b) shows an optical microscope image of a fabricated
FET with Ti/Au (10/50 nm) source and drain electrodes. Thickness and surface morphology of the WS2 channel
were estimated by AFM measurements (Figs. 3(c) and 3(d)). Electrical characterization of the WS2 FETs was
performed with a semiconductor parameter analyzer (Keithley 4200-SCS) in room temperature and under
ambient conditions. Figure 4 shows drain-source (Id-Vd) characteristics at various gate voltages (Vg) for (a)
pristine WS2 FET as shown in Fig. 3, (b) the same WS2 FET annealing at 225 °C under a 300 sccm 3% H2/Ar
gas flow for 3.5 h, (c) the same WS2 FET additionally annealing at 225 °C under a 300 sccm 3% H2/Ar gas flow
for 2 h (Total 5.5 h). Annealing process in 3% H2/Ar gas flow is effective for improvement of electrical contacts
at metal-WS2 interfaces. The detailed results will be discussed at the presentation.

References

[1] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti and A. Kis, Nature Nanotech., 6 (2011) 147.
[2] S. Li, S. Wang, D. M. Tang, W. Zhao, H. Xu, L. Chu, Y. Bando, D. Golberg and G. Eda, Appl. Mater. Today, 1
(2015) 60.
[3] K. N. Kang, K. Godin and E.-H. Yang, Sci Rep., 5 (2015) 13205.

142
Figures

(a) (b)

Figure 1: (a) Schematic illustration of the CVD experimental setup. (b) Temperature programming process of
WO3 and S precursors.

I
(c)
II (a) (b)

Figure 2: (a) Optical microscope image of the CVD-grown WS2. (b) AFM image of the WS2 at the same area in
(a). (c) Cross-section profile between A and B in (b).

(a) (d)
(b) (c)

Figure 3: (a) Raman spectra of the bulk WS2 and the CVD-grown WS2 on SiO2 measured at different points (I
and II in Fig. 2(a)). (b) Optical microscope image of the CVD-grown WS2 FET. (c) AFM image of the WS2 at the
same FET in (b). (d) Cross-section profile between A and B in (c).

(a) (b) (c)

Figure 4: Drain-source (Id-Vd) characteristics at various gate voltages Vg for (a) pristine WS2 FET as shown in
Fig. 3, (b) the same WS2 FET after annealing at 225 °C under a 300 sccm 3% H2/Ar gas flow for 3.5 h, (c) the
same WS2 FET after additionally annealing at 225 °C under a 300 sccm 3% H2/Ar gas flow for 2 h (Total 5.5 h).

143
Presenting Author: Maya Narayanan Kutty1*
Co-Authors:, Ozhan Koybasi2, Øystein Dahl3, Amin S. Azar3, T. Taniguchi4, K.
Watanabe4, Edouard Monakhov1, and Branson D. Belle2
1Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo, P.O. Box
1048, Blindern, N-0316 Oslo, Norway.
2SINTEF DIGITAL, Forskeningsveien 1, NO-0314 Oslo, Norway.
3SINTEF INDUSTRY, Forskeningsveien 1, NO-0314 Oslo, Norway.
4Advanced Nanomaterials Laboratory, High Pressure Group, National Institute for Materials Science, 1-1 Namiki,
Tsukuba, Ibaraki 305-0044, Japan.

*[Link]@[Link]

Gamma ray radiation effects on hBN encapsulated Graphene

Field Effect Transistors
In the advent of emerging technologies graphene with its unique properties of flexibility, high
mechanical strength, high thermal conductivity, structural stability along with high mobility, and
optical transparency provides a foundation for boundless applications especially in the
development of X-Ray-, THz- IR-, UV-, visible light-, chemical/ bio-sensors. It is then imperative to
study the mechanisms that arise in graphene-based composite/hybrid devices under various
radiation harsh environments. Radiation on graphene can cause formation of defects, displacement
of its tightly packed stable structure. However, most damage under high energy radiation occurs in
the substrate creating defects at the interface of graphene and substrate such as traps, tunneling
sites, generation/ recombination sites, and compensators [1].

Graphene field effect transistors (GFETs) provide an adept vehicle for investigation of radiation
effects as the field effect mobility and charge neutrality (Dirac) point are highly sensitive to
unintentional doping from surrounding environment traps, fixed charges at oxide/substrate
interface. Prior studies have shown that Gamma radiation in GFETs can cause electrically active
defects in the substrate, increase trap density at the interfaces [2] while affecting the lattice of
graphene itself exhibiting p-doped behavior. Encapsulation of graphene in 2Dmaterial such as
hexagonal boron nitride (hBN) can isolate it from moisture rich ambient air, provide supporting
substrate, passivating dielectric and due to the relatively inert nature of the hBN/graphene
interface there are less dangling bonds or charged surface traps. But under X-ray irradiation, charge
trapping is observed at or near hBN/graphene interface [3] wherein OH- and H+ species can act as
acceptor or donor defects [4].

In our study we delve deeper into understanding radiation induced defects by evaluating the
material and electrical response of hBN encapsulated exfoliated GFETs and non-encapsulated CVD
grown GFETs under un-irradiation and irradiation by Co60 (Gamma rays) conditions. The Raman
spectra (at 532nm) of non-encapsulated CVD grown graphene and hBN encapsulated exfoliated
graphene before and after gamma irradiation (total dose of 5kGy) shows an upshift of both G and
2D peaks by about 5cm-1 in non-encapsulated CVD grown graphene. This is in contrast to hBN

144
encapsulated exfoliated graphene which showed no change at the D peak under 5kGy gamma
irradiation but a small upshift in 2D peak by 1cm-1 as shown in Fig.1 and this slight upshift can be
attributed to an increase in doping. The transport characteristics measured at 300K of hBN
encapsulated exfoliated GFETs show shift in the Dirac voltage from -2.72V pre-irradiation to +4V
post irradiation as shown in Fig.2 along with degradation of mobilities from 36x103cm2/V.s pre-
irradiation to 21x103cm2/V.s post-irradiation. We infer that the energy deposited by radiation
creates electrically charged defects in the substrate and substrate/oxide interfaces negatively
affecting device performance. Furthermore we will present the electrical and material study of the
effects of increasing total dosage of gamma ray radiation on hBN encapsulated exfoliated GFETs in
contrast to the non-encapsulated CVD grown graphene providing further insight into creating
radiation hardened graphene sensors.

References
[1] R.C. Walker II, T. Shi, E.C. Silva, I. Jovanovic, and J.A. Robinson, ‘Radiation Effects on two dimensional
materials’, Phys. Status Solidi A, 213 (12), 3057-3268 (2016).
[2] K. Alexandrou, A. Masurkar, H. Edrees, J.F. Wishart, Y. Hao, N. Petrone, J. Hone, and I. Kymissis, Appl. Phys.
Lett., 109, (2016) 153108.
[3] C.X. Zhang, B. Wang, G.X. Duan, E. X. Zhang, D. M. Fleetwood, M.L. Alles, R.D. Schrimpf, A. P. Rooney, E.
Khestanova, G. Auton, R. V. Gorbachev, S.J. Haigh, and S.T. Pantelides, IEEE TRANSACTIONS ON NUCLEAR
SCIENCE, Vol.61, No.6, 2868 (2014).
[4] P. Wang, C. Perini, A. O’Hara, B.R. Tuttle, E. X. Zhang, H. Gong, C. Liang, R. Jiang, W. Liao, D. M. Fleetwood,
R.D. Schrimpf, E.M. Vogel, and S.T. Pantelides, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol.65, No.1,
156 (2018).
Figures

Figure 1: 2D peak of the Raman Spectrum for hBN encapsulated GFETs for pre-irradiation and post-irradiation of 5kGy
Gamma rays.
Post Irradiation-5kGy Gamma
0,003 Pre Irradiation

0,002
(1/Ω)

0,001

0,000
-10 -5 0 5 10
VG(V)
Figure 2: Conductivity versus Gate Voltage plot of hBN encapsulated GFETs comparing pre-irradiation and post-
irradiation of 5kGy Gamma rays.

145
Milan Blaskovic
Slaven Garaj
National University of Singapore, Centre for Advanced 2D Materials, 6 Science Drive 2, 117542 Singapore,
Singapore

a0129484@[Link]/mblaskovic1989@[Link]

Tunable interaction between graphene and a DNA molecule

CVD grown monolayer graphene has shown significant potential in bio-sensing and single-molecule
detection applications due to its atomic thinness, mechanical robustness, excellent electronic properties, and
functionalization possibilities [1, 2]. However, rational implementation of monolayer graphene has been
hampered by the lack of understanding of the nature of its interactions with different biomolecules.

We investigated interaction of individual single-stranded DNA oligomers with the CVD grown monolayer
graphene supported on SiO2/Si surface, in a wide range chemical and physical liquid environments; and we fully
identified and quantified all the relevant forces contributing to the total interactions.

Using atomic force microscopy (AFM), we measured force vs. distance curves for the interaction
between a DNA tethered on a AFM tip and a graphene surface in aqueous enviornment. We observed
characteristic plateaus in the curves, which are associated with unzipping of the DNA molecule from the surface
(Fig 1). The single-molecule forces were measured at room temperature in a range of solutions with varying
concentration of salts and various pH values. Lack of significant variation of the molecular forces in these
solutions indicated that there is no electrostatic contribution to the force [3]. Further experiments in aqueous
solution with inclusion of methanol, and experiments with varying temperature, demonstrated that hydrophobic
hydration has dominating contribution to the overall force. With addition of an aromatic solvent (phenol) into the
solution, we observe clear decrease in the overall interaction, due to disruption of pi-pi stacking interactions
between graphene and aromatic DNA nucleobases.

The experiments identified that the overall DNA-graphene interaction is the combination of
hydrophobic and pi-pi stacking forces. To understand the experiments, we proposed an elastic polymer chain
model, which helped us quantifies all the relevant contributions to the force: pi-pi stacking interactions contribute
around 20%; entopic-elastic forces contribute around 10%; and hydration (hydrophobic) forces contribute
around 70% to total interaction. The insight obtained from our experiments can be used to modulate DNA-
graphene interaction and possibly control to movement of individual biomolecule; to completely eliminate
interactions for nanopore-based DNA sequencing; or to limit fouling of graphene membranes in desalination
applications.

References

[1] Yan, F., Zhang, M. & Li, J. Solution-Gated Graphene Transistors for Chemical and Biological Sensors. Adv.
Healthc. Mater. 3, 313–331 (2014).

[2] Garaj, S., Liu, S., Golovchenko, J. A. & Branton, D. Molecule-hugging graphene nanopores. Proc. Natl. Acad.
Sci. 110, 12192–12196 (2013)
[3] Iliafar, S., Wagner, K., Manohar, S., Jagota, A. & Vezenov, D. Quantifying Interactions between DNA Oligomers
and Graphite Surface Using Single Molecule Force Spectroscopy. J. Phys. Chem. C 116, 13896–13903 (2012)

146
Figures

Figure 1. Characteristic force vs. distance curve (left), and force curve collection schematics (right)

Figure 2. pH and molarity dependece of ssDNA interaction with graphene (upper left and right, respectively),
dependence of interaction on methanol addition (lower left), and temperature of liquid environemment
(lower right)

147
Yichao Cai
Xiaofei Hu, Jianchao Sun, Zifan Li, Yong Lu, Hao Yang, Jun Chen*
Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Nankai University, Tianjin,
China

chenabc@[Link]

Graphene and Carbon Nanotube in Na-CO2 Battery

Abstract
Sharing the similar structure of 3-dimensional tri-continuous porous structure, multidimensional continuous
electron-transport pathways and excellent mechanical strength, graphene and carbon nanotube have attracted
enormous interest and been widely applied in metal-air battery. However, during the past decades, all
reported Na-CO2 batteries are non-rechargeable at room temperature in pure CO2 atmosphere, which was
caused by gas channel blockage, electro-conductivity decrease, and insufficient cathode wettability to
electrolyte. In order to solve this leftover problem and to take the full advantages of those two carbon materials,
we introdued the multi-wall carbon nanotube as the cathode of Na-CO2 battery, and achieved the first
rechargeable Na-CO2 battery at room temperature. And with the help of a novel rGO-Na anode, a better
electrichemical performance Na-CO2 battery with higher safety has been able to be published. The introduction
of multi-wall carbon nanotube could bring numerous advantages in CO2 battery system. First, this
3-dimentioanal tri-continuous porous structure cathode could avoid the unwanted product clogging. Second, the
high specific surface area and better electrolyte wettability contributed to an increased triple-phase boundary for
discharging reaction. Third, the high electro-conductivity of multi-wall carbon nanotube could minimize the
polarization during charge. Moreover,the amorphous carbon on the surface of multi-wall carbon nanotube is
exactly the same product during the discharge, this reactive-carbon-rich cathode promised the easier charge
progress for Na-CO2 battery.[1,2] To replace the unstable Na metal anode, we proposed the rGO-Na composite
anode for the first time, and appling to a high safty Na-CO2 battey system.[3] Thanks to the unique structure and
excellent physical property of graphene, the rGO-Na anode represented faster Na+ diffusion rate and depressed
Na dendrite growth. With the help of graphene and carbon nanotube, so many remarkable progresses have
been made in Na-CO2 battery, and they also hold a broad prospect of application in other metal-air batteries
and commercial battery systems.
References

[1] X. Hu, J. Sun, Z. Li, Q. Zhao, C. Chen, J. Chen, Angew. Chem. Int. Ed., 55, (2016), 6482 - 6486
[2] J. Sun, Y. Lu, H. Yang, M. Han, L. Shao, J. Chen, Research, DOI: 10.1155/2018/6914626
[3] X. Hu, Z. Li, Y. Zhao, J. Sun, Q. Zhao, J. Wang, Z. Tao, J. Chen, Sci. Adv. 3, (2017), e1602396

148
Figures

Figure 1: (a) Structure of Na-CO2 batteries with metal Na foil anode, ether-based electrolyte, and t-MWCNT cathode. (b)
SEM imagesof cathode from top and and side views. (c) HRTEM image of t-MWCNT. (d) Discharge and charge profiles of
Na-CO2 batteries at 1 A/g (e) CV curves of Na-CO2 batteries with scan rate of 0.1 mV/s. SEM images with corresponding
inset photographs of (f) GO foam, (g) rGO foam reduced by molten Na, and (h) rGO-Na anode surface

149
Yung-Huang Chang
Yu-Jhih Huang, Yuan-Tsung Chen, Chien-Sheng Huang
Bachelor Program in Interdisciplinary Studies, National Yunlin University of Science and Technology, Yunlin,
Taiwan 64002
g9213752@[Link]

Tunable Band Gap Energy from WSxSey Monolayer

The transition metal dichalcogenides (TMDs) have attracted much attention because its unique characteristics
and potential application in the low-power and optoelectronic devices. Recent reports have successfully
demonstrated the growth of 2-dimensional MoSxSey, MoxWyS2 and MoxWySe2 alloys, where these materials
exhibit tunable band gap energies. However, WSxSey alloys are not available via CVD process until now. In the
study, we report that WSxSey monolayer alloys were synthysized using tungsten oxides, selenium and sulfur
powders as the sources in the CVD process, where different heating temperatures of selenium and sulfur
powders are applied respectively to control the ratio of S to Se. The optical band gap of the as-grown WSxSey
monolayer alloys is precisely tunable from 2.0 eV to 1.64 eV via modulating the ratio of S to Se. With the
increase of selenium in WSxSey monolayers, apparent electronic state transformation from p-type to n-type
were recorded through energy band diagrams, beneficial for the future optical design.

References

[1] Yung-Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan-Kai Chang, Wei-Ting Hsu, Jing-Kai
Huang, Chang-Lung Hsu, Ming-Hui Chiu, Taishi Takenobu, Henan Li, Chih-I Wu, Wen-Hao Chang, Andrew Thye
Shen Wee, Lain-Jong Li, ACS Nano 2014, 8, 8582–8590.
[2] Jing-Kai Huang, Jiang Pu, Chang-Lung Hsu, Ming-Hui Chiu, Zhen-Yu Juang, Yung-Huang Chang, Wen-Hao
Chang, Yoshihiro Iwasa, Taishi Takenobu, Lain-Jong Li, ACS Nano 2014, 8, 923–930.

Figures

Figure 1: (a) The energy band diagram of pristine WS2, WSe2 and as-grown WSxSey monolayers acquiring form UPS
examination. (b) The band-gap energy of WSxSey monolayers as a function of Se concentration, showing a well linear
relationship. (c) The conduction band minimum (CBM), valence band maximum (VBM) and Fermi level positions of
WSxSey monolayers as a function of Se concentration. The vacuum energy is taken as zero for reference.

150
Chang-Hsiao Chen1,*
Han-Ching Chang1, Chien-Liang Tu1, Kuang-I Lin2, Jiang Pu3, Taishi Takenobu3,
Chien-Nan Hsiao4
1Department of Automatic Control Engineering, Feng Chia University, Taichung, Taiwan
2Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan
3Department of Applied Physics, Nagoya University, Nagoya, Japan
4Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, Taiwan

chsiaoc@[Link]

Chemical Vapor Deposition Synthesis of Large-Area

Monolayer InSe
Recently, two-dimensional materials of indium selenide (InSe) layers have attracted much attention from
scientific community due to their high mobility transport and fascinating physical properties.[1-3] To date, reports
on synthesis of high quality and scalable InSe atomic films have been limited. Here, we report that a synthesis
of InSe atomic layers by vapor phase selenization of In2O3 in a chemical vapor deposition (CVD) system,
resulting in large-area monolayer flakes or thin films.[4] The atomic films are continuous and uniform over a
large area of 1 x 1 cm2, comprising of primarily InSe monolayers. Spectroscopic and microscopic
measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion-gel-gated field-
effect transistors based on CVD InSe monolayers exhibited n-type channel behaviors, where the field effect
electron mobility values can be up to ~30 cm2/Vs along with an on/off current ratio, of >104 at room temperature.
In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient
environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling
possibility of reassembly of various two-dimensional materials into vertically stacked heterostructures,
prompting research efforts to probe its characteristics and applications.

References

[1] Denis A. Bandurin et al., Nature Nanotechnology, 12 (2016) pp 223-227

[2] Po-Hsun Ho et al., Acs Nano, 11 (2017) pp 7362-7370
[3] Sukrit Sucharitakul et al., Nano Letters, 15 (2015) pp 3815-3819
[4] Han-Ching Chang et al., Small, (2018) doi: 10.1002/smll.201802351

Figures

Figure 1: (Left) Cross-section TEM image of a monolayer InSe film, (Right) Linear scale transfer curve of the InSe FET.

151
Ah-Jin Cho
and Jang-Yeon Kwon
School of Integrated Technology, Yonsei University, Songdogwahak-ro 85, Incheon, South Korea
Yonsei Institute of Convergence Technology, Songdogwahak-ro 85, Incheon, South Korea

ahjincho@[Link]

Evaluation of a WSe2/MoS2 Heterojunction in the Perspective of

a Transparent Thin-film Solar Cell
Solar energy is one of the most powerful and reliable renewable energy sources, but its wide-use is often
hampered by the limited installation space. As conventional c-Si solar cell is very bulky and heavy, it requires
large extra space to be installed. As a means to overcome such limitation, a transparent and light-weighted thin-
film solar cell, which can be installed at the exterior of the buildings, has been studied [1-3]. In order to achieve
transparency and photon-electron conversion at the same time, special structure or material is needed. We are
suggesting a p-n heterojunction of 2D semiconductors as a candidate material to realize a transparent thin-film
solar cell. In that few layers of a 2D semiconductor is highly transparent due to its thinness, but still maintain its
photovoltaic effect and show relatively high light-matter interaction, it can meet those two contradictory
requirements of a transparent solar cell [4]. Here, we fabricated a transparent thin-film solar cell with a p-n
heterojunction of WSe2/MoS2 and evaluated its performance. By utilizing a glass substrate, a 2D p-n
heterojunction, ITO electrodes and a CYTOP encapsulation, we achieved a highly transparent (~80 %) and
stable solar cell. Our WSe2/MoS2 heterojunction device showed clear current rectification under dark state, and
photovoltaic effect with sizable open circuit voltage (Voc) and short circuit current (Isc) under illumination. 2D
materials are usually vulnerable to the environmental factors and easily degraded under ambient condition.
However, by simply spin coating CYTOP as an encapsulation layer, the device properties were maintained
stable for ~2 months. Especially, the standard deviation of Voc values throughout the measurement was less
than 3% of the initial Voc value, which indicates how stable the devices are. In order to evaluate the real
performance of the 2D solar cell under sunlight, I-V characteristic of a WSe2/MoS2 heterojunction under AM1.5G
illumination was conducted. It turned out to show power conversion efficiency of 0.84 % under solar spectrum.
In addition, the photovoltaic characteristics under monochromatic light representing red, green and blue were
measured. The Isc and Voc of our solar cell showed fast response to the light pulse repeating on and off with
the interval of 1.5 and 3 seconds, respectively. Good dynamic performance with consistent current or voltage
level at light ‘on’ stage during repetitive measurement indicates small interface trap density of our device. We
believe that our result exhibits great potential of a 2D heterojunction to be utilized as a transparent thin-film solar
cell.

References

[1] R. R. Lunt and V. Bulovic, Appl. Phys. Lett., 98 (2011), 113305.

[2] Y. Zhao and R. R. Lunt, Adv. Energy Mater., 3 (2013), 1143-1148.
[3] J. L. H. Chau, R. T. Chen, G. L. Hwang, P. Y. Tsai and C. C. Lin, Sol. Energy Mater. Sol. Cells, 94 (2010), 588–
591.
[4] M. L. Tsai, M. Y. Li, J. R. D. Retamal, K. T. Lam, Y. C. Lin, K. Suenaga, L. J. Chen, G. Liang, L. J. Li, H. He Jr,
Adv. Mater., 29 (2017), 1701168.

152
Figures

Figure 1: (a) A schematic and (b) an optical microscope image of a WSe2/MoS2 heterojunction device and its I-V
characteristics under (c) dark state and (d) illumination (halogen lamp).

Figure 2: Variation of (a) Jsc and (b) Voc values as time goes on after fabrication. (c) I-V characteristic of the 2D solar cell
under AM 1.5G illumination (1sun) and related parameters.

Figure 3: Photograph of measurement setup for (a) red, (b) green and (c) blue light response. Isc-time plot of our device,
measured under (d) red, (e) green and (f) blue light pulse repeating on and off for 1.5 seconds.

153
Hailiang Chu
Errui Wang, Tingting Fang, Shujun Qiu, Yongjin Zou, Cuili Xiang, Huangzhi
Zhang, Erhu Yan, Fen Xu, Lixian Sun
Guangxi Key Laboratory of Information Materials, Guangxi Collaborative Innovation Center of Structure and
Property for New Energy and Materials and School of Materials Science and Engineering, Guilin University of
Electronic Technology, No.1 Jinji Road, Qixing District, Guilin 541004, PR China

chuhailiang@[Link] (H.C.); sunlx@[Link] (L.S.)

Effect of Reduced Graphene Oxide on the Electrochemical

Properties of Overlithiated Oxide Cathode Materials for Li-Ion
Batteries
Lithium-ion batteries (LIBs) have been used in many fields such as military power supply, electric vehicles (EVs),
and portable electronic products. Cathode material is one of the key factors of LIBs, which is now becoming a
technological bottleneck to achieve a high powder/energy density. [1-4] In this contribution, we successfully
prepared nano-particles overlithiated oxide cathode material Li1.2Mn0.6Ni0.2O2 by solid phase method through
ball milling. Reduced graphene oxide was introduced into nano-particles Li1.2Mn0.6Ni0.2O2 through hydrothermal
method. Structure characterization and performance testing show that the addition of 3 wt% graphene gives rise
to the improved electrochemical properties (Figure 1).

References

[1] Li Biao, Xia Dingguo, Advanced Materials, 29 (2017) 1701054.

[2] Wang Lin, Shi Ji-Lei, Su Heng, Li Guangyin, Zubair Muhammad, Guo Yu-Guo, Yu Haijun, Small, 14 (2018)
1800887.
[3] Li Wangda, Song Bohang, Manthiram Arumugam, Chemical Society Reviews, 46 (2017) 3006.
[4] Wang Errui, Shao Chunfeng, Qiu Shujun, Chu Hailiang, Zou Yongjin, Xiang Cuili, Xu Fen, Sun Lixian, RSC
Advances, 7 (2017) 1561.

Figures

0.1
0.2
0.1
0.5
1
2

Figure 1: Rate performance of Li1.2Mn0.6Ni0.2O2 with addition of different amounts of reduced graphene oxide

154
Haina Ci
Zhongfan Liu*
Peking University & Beijing Graphene Institute, Beijing, China
cihn-cnc@[Link]

Vertically-oriented Graphene Growth at Low Temperature for

Solarthermal Applications
Abstract
Compared with the conventional two-dimensional graphene, vertically-oriented graphene (VG) nanosheets [1],
composed by few-layer graphene, have also been synthesized via a plasma-enhanced chemical vapor
deposition (PECVD) route on metal or dielectric substrates. Many unique properties, including large amount of
exposed edges, non-stacking geometry, and a large surface-to-volume ratio were detected for such graphene
nanosheets. In particular, different application aspects with regard to their 2D counterparts have been
developed [2]. By a direct-current -PECVD system at 580 oC, the direct synthesis of VG nanosheets on
traditional soda-lime glass or other glass substrates can be achieved, which is right below the softening point of
normal glass, and featured a scale-up size ~6 inches. Particularly, the fabricated VG nanosheets-glass hybrid
materials at a transmittance range of 97%–34% exhibited excellent solarthermal performances, reflected by a
70%–130% increase in the surface temperature under simulated sunlight irradiation. We believe that the
graphene glass hybrid materials have great potential for use in future transparent “green-warmth” construction
materials.

References

[1] Bo, Z.; Yang, Y.; Chen, J. H.; Yu, K. H.; Yan, J. H.; Cen, K. F. Nanoscale, 5 (2013) 5180–5204.
[2] Zhang, Z; Lee, C. S.; Zhang, W. Advanced Energy Materials, 7 (2017) 1700678.

Figures

Figure 1: The schematic illustration of VG-glass materials for solarthermal applications

155
Lingzhi Cui
Xudong Chen, 1 Bingzhi Liu, 1 Ke Chen, 1Zhaolong Chen, 1Yue Qi, 1Huanhuan Xie,
1Fan Zhou, 1Mark H. Rümmeli, 4Yanfeng Zhang, *,1,2,3 and Zhongfan Liu*,1,3
1 Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry
and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing
100871, People’s Republic of China
2 Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing
100871, People’s Republic of China
3 Beijing Graphene Institute, Beijing 100091, People’s Republic of China
4 Soochow Institute for Energy and Materials Innovations (SIEMIS), Key Laboratory of Advanced Carbon
Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006,
P.R. China.
cuilz-cnc@[Link]

Highly Conductive Nitrogen-doped Graphene Grown on Glass

Towards Electrochromic Applications
Abstract
The direct synthesis of low sheet resistance graphene on glass can promote the applications of such intriguing
hybrid materials in transparent electronics and energy related fields. Chemical doping is efficient for tailoring the
carrier concentration and the electronic properties of graphene that previously derived from metal substrates.
Herein, we report the direct synthesis of 5-inch uniform nitrogen-doped (N-doped) graphene on the quartz glass,
through a designed low- pressure chemical vapor deposition (LPCVD) route. Ethanol and methylamine were
selected respectively as precursor and dopant for acquiring predominantly graphitic-N doped graphene. We
reveal that, by a precise control of growth temperature and thus the doping level, the sheet resistance of
graphene on glass can be as low as one half that of non-doped graphene, accompanied with relative high
crystal quality and transparency. Significantly, we demonstrate that, this scalable, 5-inch uniform N-doped
graphene glass can serve as excellent electrode materials for fabricating high performance electrochromic
smart windows, featured with a much simplified device structure. This work should pave ways for the direct
synthesis and application of the new type graphene- based hybrid material.

References

[1] Lingzhi Cui, Xudong Chen, Bingzhi Liu, Ke Chen, Zhaolong Chen, Yue Qi, Huanhuan Xie, Fan Zhou, Mark H.
Rümmeli, Yanfeng Zhang, and Zhongfan Liu. Highly Conductive Nitrogen-Doped Graphene Grown on Glass
toward Electrochromic Applications. ACS Applied Materials & Interfaces Article ASAP

156
Figures

157
Xueping Cui
(Jian Zheng)
Institute of Chemistry Chinese Academy of Sciences, Zhongguancun North First Street 2,100190, Beijing,
China
cuixueping@[Link]

Fabrication of Transition Metal Dichalcogenides Nanoscrolls

Abstract
Atomically thin transition metal dichalcogenides (TMD) flakes were believed capable to scroll into nanoscrolls
(NS) with distinct properties. However, limited by mechanical strength and chemical stability, production of high-
quality transition metal dichalcogenides nanoscrolls remain challenging. Here, we demonstrated high-quality
nanoscrolls made from chemical vapour deposition-grown transition metal dichalcogenides flakes. Based on the
internal open topology, nanoscrolls hybridized with a variety of functional materials have been fabricated, which
is expected to confer transition metal dichalcogenides nanoscrolls with additional properties and functions
attractive for potential application.
References

[1] Xueping Cui, Jian Zheng*, et al. Nature Commun. 9(2018),1301.

Figures

Figure 1: TMD-NSs from self-scrolling CVD-based TMD monolayer flakes. a, Optical image of CVD-grown MoS2
monolayer flakes. b, Optical image of MoS2-NSs. c-e, The fabrication process of a MoS2-NS array. f-i, SEM images of
typical TMD-NSs: MoS2-NSs (f),WS2-NSs (g), MoSe2-NSs (h), and WSe2-NSs (i). j-m, TEM images of typical TMD-NSs:
MoS2-NSs (j),WS2-NSs (k), MoSe2-NSs (l), and WSe2-NSs (m). Inset: High-magnification images of sidewalls of TMD-
NSs. (Scale bars, 500 μm in a; 100 μm in b; 50 μm in c-e; 5 μm in f, I; 10 μm in g, h; 20 nm in j-m; 2 nm in inset).

158
Xi Dai
Fang Wan, Linlin Zhang, Hongmei Cao, Zhiqiang Niu
Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), College of Chemistry,
Nankai University, Tianjin 300071, PR China

daixi@[Link], zqniu@[Link]

Freestanding graphene/VO2 composite films for highly stable

aqueous Zn-ion batteries with superior rate performance
Aqueous Zn-ion batteries (ZIBs) are promising energy storage systems owing to their high safety and low cost. [1]
However, their unsatisfactory energy and power densities as well as the cycling performance have hindered
their practical application. Herein, we demonstrate a highly reversible zinc/vanadium dioxide system, where
freestanding reduced graphene oxide/vanadium dioxide (RGO/VO 2) composite films are used as the cathodes.
Owing to the synergistic effects from continuously porous network of RGO [2] and the robust structure of VO2,
RGO/VO2 composite films not only enhance the transport of electrons and ions, but also accommodate the
considerable deformations caused by Zn2+ extraction/insertion. Therefore, the Zn/VO2 batteries exhibit an
energy density of 65 Wh kg-1 even at a high power density of 7.8 kW kg -1. More impressively, they deliver
excellent capacity retention of 99% after 1000 cycles. In addition, the RGO/VO2 composite films can serve as
the electrodes of flexible ZIBs. Flexible soft-packaged Zn/VO2 batteries demonstrated stable electrochemical
performance at various bending states. Therefore, the rechargeable Zn/VO 2 battery can bridge the gap between
conventional batteries and supercapacitors, opening new opportunities for powering portable electronic devices
and hybrid electric vehicles.

References

[1] Fang Wan, Linlin Zhang, Xi Dai, Xinyu Wang, Zhiqiang Niu & Jun Chen. Nat. Commun. 1 (2018).
[2] Zhiqiang Niu, Lili Liu, Li Zhang, Qi Shao, Weiya Zhou, Xiaodong Chen, Sishen Xie. Adv. Mater. 22 (2014).

Figure

Figure: Long-term cycling performance with Coulombic efficiency of the RGO/VO2 composite film at 4 A g-1. The inset
shows the optical images of corresponding samples. I: NH3VO4/GO foam through freeze-drying; II: RGO/VO2 foam via
calcination; III: freestanding RGO/VO2 electrode film after mechanical compression; IV: the desirable piece of RGO/VO2
composite film electrode for ZIBs.

159
Bing Deng
Zhongfan Liu, Hailin Peng
Peking University, Yiheyuan Road N0.5, Beijing, China
Beijing Graphene Institute, Sujiatuo Zhen Cui Hunan road 13, Beijing, China
hlpeng@[Link], zfliu@[Link]

Graphene as Electronic Materials: Controlled Growth of Single-

Crystal Graphene Wafer
Similar to silicon (Si) wafers as the cornerstone of modern Si based electronics, single-crystal graphene wafers
are vital components in future high-performance graphene electronics. Two approaches have been employed
for single-crystal graphene growth by chemical vapor deposition (CVD), that is, the single-nucleation approach
enabled by reducing the nucleation density, and the multi-nucleation approach featured with oriented graphene
growth on an epitaxial substrate. Cu(111) is a substrate enabling epitaxial growth of graphene. We fabricated
single-crystal Cu(111) thin films free of in-plane twinning on sapphire by magneton sputtering and solid state
recrystallization process. 4 inch single-crystal graphene was grown on the Cu(111) by APCVD. [1] The single-
crystallinity was confirmed by multiscale characterization, including OM, SEM, Raman, LEED, and TEM. To
improve the growth rate, single-crystal Cu90Ni10(111) thin films were fabricated. 4 inch single-crystal graphene
was grown on the CuNi(111) within 10 min, 50 folds faster than that of Cu(111). [2] Single-crystal graphene
grown on Cu(111) and CuNi(111) can be free of wrinkles, which further improved the electrical and mechanical
properties of graphene.[3] One of the best benefits of graphene growth on the Metal(111) lies in the compatibility
with wafer technology. A pilot-scale APCVD system is designed and built, and we are paving the way toward
mass production of single-crystal graphene wafers.

References
[1] Bing Deng, Zhongfan Liu, Hailin Peng, et al. ACS Nano, 2017, 11, 12337.
[2] Bing Deng, Zhongfan Liu, Hailin Peng, et al. Advanced Materials, 2018, submitted.
[3] Bing Deng, Zhongfan Liu, Hailin Peng, et al. Small, 2018, 14, 1800725.

Figures

Figure 1: (a) Fabrication of single-crystal CuNi(111) thin films. (b) Photograph of a Cu(111) wafer. (c) Photograph of a
CuNi(111) wafer. (d) EBSD of Cu(111). (e) SEM image of graphene grown on CuNi(111). (f) A homemade pilot-scale
APCVD system for mass production of single-crystal graphene wafer.

160
Jianqiu Deng
Meng Li, Zonglin Zuo, Wen-Bin Luo, Qingrong Yao, Zhongmin Wang, Huaiying
Zhou
School of Material Science and Engineering, Guilin University of Electronic Technology, Guangxi, Guilin
541004, China

jqdeng@[Link]

High-performance V-based electrode materials for sodium-ion

batteries

Sodium ion batteries have been considered as one of the promising candidates for large-scale energy storage
systems [1, 2]. From the application perspective of an integrated sodium ion full-cell system, it is important to
develop a practical sodium-ion full-cell system with excellent cycling life, superior safety, and good rate
capability to tolerate the frequent current impulses during the grid peak period [3]. Therefore, exploring
appropriate electrode materials with excellent electrochemical properties is the key issue.
In this work, a series of high-performance V-based electrode materials for sodium-ion batteries have been
synthesized by solvothermal and sol-gel methods. The microstructure and electrochemical properties of the
materials are investigated by physical characterization and electrochemical measurement techniques. The
electrode materials exhibit excellent electrochemical performance, including high capacity, superior rate
capability, and remarkable cycling performance. Na3V2(PO4)3@C/CNT anode delivers a reversible capacity of
60.2 mA h g-1 after 10000 cycles at 50 C. The fabricated symmetric full cell exhibits an initial discharge
capacities of 89 mA h g−1 at a high current density of 20 C and can still maintain a capacity of 72.1 mA h g-1
over 5000 cycles, corresponding to a capacity retention of about 81%. In addition, micro-sized two-phase
structured Li2.6Na0.4V2(PO4)3/C composite is comprised of numerous primary nanocrystals. It shows excellent
long-term cycling stability with capacity retention of about 83 % and 100 % after 3000 cycles at 10 C, for the
cathode and anode, respectively. Moreover, the symmetric sodium-ion full cells made of the Na2LiV2(PO4)3/C
nanocomposite have good rate capability and cycling stability, which verifies the feasibility for practical
applications of the Na2LiV2(PO4)3/C nanocomposite in sodium-ion batteries.

TWO pages abstract format: including figures and references.

Do not change the font sizes or line spacing to squeeze more text into a limited number of pages.
Please follow the model below.
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Page margins are 2,00 cm top and down; 1,90 cm left and right.
Greek letters, sub- and superscripts should be formatted as such.

References

[1] H. Pan, Y.-S. Hu, L. Chen, Energ Environ Sci, 2013, 6, 2338-2360.
[2] X. Xiang, K. Zhang, J. Chen, Adv Mater, 2015, 27, 5343-5364.
[3] J. Deng, W.-B. Luo, S.-L. Chou, H.-K. Liu, S.-X. Dou, Adv. Energy Mater., 2018, 8, 1701428.

Figures

161
Figure 1: The electrochemical performance of symmetric full cells based on the NLVP/C.

162
Jie Gao
Guilin University of Electronic Technology, China

NextYearGJ@[Link]

Enhanced Thermoelectric Performance in Graphene Quantum

Dots/Te Nanowires Flexible Hybrid Film
Graphene has been proved to be positive for reducing thermal conductivity in many thermoelectric
nanocomposites. Here we prepared graphene quantum dots (GQDs) /Te nanowires flexible hybrid films on mica
substrate through drop-cast method. After being annealed in H2/Ar atmosphere, the hybrid films show
enhanced thermoelectric performance due to the redox-reaction between GQDs and Te nanowires during
annealing process. The thermoelectric performance of hybrid films can be further adjusted via changing size
and percentage of GQDs in film. This work provides insights for the synthesis of graphene-based hybrid
thermoelectric films.

163
Yunpeng Hou
Pengfei Zhou, Huanju Meng, Zhen Zhang, Zhanliang Tao* and Jun Chen*
Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), College of Chemistry,
Nankai University, Tianjin, China

chenabc@[Link]

High-performance layered Ni-rich LiNi1-x-yCoxAlyO2 cathode

materials for lithium ion batteries
Lithium ion batteries (LIBs) are expected to be used as energy storage technologies for electric vehicles,
renewable power stations, and smart grids. One of the great challenges for LIBs is to develop advanced
cathode materials in terms of high capacity, long cycling life, and high thermal stability. Among all kinds of
cathode materials, layered Ni-rich LiNi1-x-yCoxAlyO2 materials are considered as promising candidates with
advantages of high capacity and low cost. However, there still remain some crucial issues to be solved including
unsatisfactory thermal stability and relatively rapid capacity fading during cycling. Optimizing synthesis process
and surface coating are two major strategies to alleviate the above issues. Herein, on the one hand, we report
an easy co-precipitation synthesis of microspherical Ni1-x-yCoxAly(OH)2 precursors employing AlO2- as the Al
source to guarantee the co-precipitation of Ni2+, Co2+ and Al3+.[1,2] As cathode materials for LIBs, both
LiNi0.8Co0.15Al0.05O2 and LiNi0.9Co0.07Al0.03O2 exhibit high discharge capacity, good cycling performance and
remarkable rate capability. The improved performance might be attributed to the combination of the high Ni
component, well layered structure with low degree of Li+/Ni2+ mixing, and uniform microspheres with
homogeneous distribution of Ni, Co, and Al. On the other hand, we report a one-step dry coating of amorphous
SiO2 or Zr(OH)4 on spherical LiNi0.915Co0.075Al0.01O2 (NCA) cathode materials.[3,4] 0.2 wt% SiO2-coated NCA
shows a specific capacity of 181.3 mA h g−1 with a capacity retention of 90.7% after 50 cycles at 1 C. 0.5 wt%
Zr(OH)4-coated NCA delivers a capacity of 197.6 mA h g-1 at the first cycle and 154.3 mA h g-1 after 100 cycles
with a capacity retention of 78.1% at 1 C. Such superior electrochemical performance is mainly ascribed to the
surface coating layer of amorphous SiO2 or Zr(OH)4, which effectively suppresses side reactions between NCA
and electrolytes, decreases the SEI layer resistance, and retards the growth of charge-transfer resistance. All
these works on the modification of layered Ni-rich cathode materials will further promote their commercial
application in LIBs.

References

[1] P. Zhou, H. Meng, Z. Zhang, C. Chen, Y. Lu, J. Cao, F. Cheng and J. Chen, J. Mater. Chem. A, 6, (2017), 2724-
2731.
[2] H. Meng, P. Zhou, Z. Zhang, Z. Tao and J. Chen, Ceram. Int., 4, (2017), 3885-3892.
[3] P. Zhou, Z. Zhang, H. Meng, Y. Lu, J. Cao, F. Cheng, Z. Tao and J. Chen, Nanoscale, 46, (2016), 19263-19269.
[4] Z. Zhang, P. Zhou, H. Meng, C. Chen, F. Cheng, Z. Tao and J. Chen, J. Energy Chem., 3, (2017), 481-487.

164
Figures

Figure 1: (a) Schematic illustration of the preparation process of spherical LiNi1-x-yCoxAlyO2. (b) Charge and discharge
profiles at selected cycles at 0.1 C and (c) rate performance at various rates of the as-prepared LiNi0.9Co0.07Al0.03O2. (d)
Schematic diagram for the effects of SiO2 or Zr(OH)4 coating layer on the surface of NCA. (e) Typical charge and
discharge profiles of 0.2 wt% SiO2-coated NCA and (f) rate capability of pristine NCA and 0.2 wt% SiO2-coated NCA.

165
Keiichiro Ikeda1
Ryo Nouchi1,2
1Department of Physics and Electronics, Osaka Prefecture University, Sakai 599-8570, Japan
2PRESTO, Japan Science Technology Agency, Kawaguchi 332-0012, Japan
r-nouchi@[Link]

Chemical Modification of Graphene Controlled by

Substrate Surface Treatment with Self-Assembled Monolayers
Graphene is a two-dimensional sheet in which carbon atoms are arranged in a honeycomb lattice form. Its
ultimate thinness is one of the most prominent features in its structure. Owing to the thinness, it is possible to
change its characteristics by chemical adsorption of foreign atoms or molecules. In addition, the ultimate
thinness enables us to modulate an electron density in graphene by field-effect gating in a field-effect-transistor
configuration. Therefore, it is expected that the surface chemical modification of graphene can be controlled by
such gating method. We have demonstrated that the degree of surface chemical modification of graphene is
indeed controllable by electron density modulation of graphene [1, 2]. In this study, we investigate on another
methodology of field-effect gating, i.e., molecular gating by means of modification of the supporting substrate
surface with a self-assembled monolayer (SAM). The local electric field generated by the electric dipoles of the
constituent molecules of the SAM [3] is found to control various chemical modification reactions of graphene.

We used two types of triethoxysilane molecules shown in Figure 1, which have antiparallel dipole moments. A
SAM of these molecules was formed on a SiO2 substrate (hereinafter, referred to as (a) F SAM and (b) CH3
SAM). Graphene flakes were exfoliated on the SAM-treated substrate with adhesive tape. The degree of
chemical modification was determined by the D band (~1350 cm-1) in a Raman scattering spectrum.

We have performed molecular gate control on various chemical modifications of graphene. Among them, here
we show results of photochemical reactions based on benzoyl peroxide (BPO) [4] deposited on graphene.
Figure 2 displays Raman scattering spectra after ultraviolet irradiation to the BPO-covered graphene on (a) F
SAM and (b) CH3 SAM treated substrates. Even after the UV irradiation to induce the photochemical reaction,
the D band is not seen from graphene on F SAM. On the other hand, it is clearly discernible in the spectrum of
graphene on CH3 SAM. The results indicate that the reactivity of graphene towards the photochemical reaction
with BPO is higher on the CH3-SAM treated substrate than on F-SAM treated one. Graphene on the CH3 SAM
should be more electron rich owing to the electrostatic effect (molecular gating effect) from the adjacent
positive charge. Thus, graphene becomes more instable than the hole-rich one on the F SAM, leading to the
higher reactivity. In the presentation, we will discuss other chemical modifications such as gas-phase photo-
oxidation by atmospheric oxygen and liquid-phase modification by aryl diazonium salt.

References
[1] X. Fan, R. Nouchi and K. Tanigaki: J. Phys. Chem. C 115 (2011) 12960
[2] N. Mitoma and [Link]: Appl. Phys. Lett. 103 (2013) 201605
[3] K. Yokota, K. Takai and T. Enoki: Nano Lett. 11 (2011) 3669.
[4] L. Haitao, R. Sunmin, C Zheyuan, M. L. Steigerwald, C Nuckolls and L. E. Brus: J. Am. Chem. Soc. 131 (2009)
17099.

166
Figures

(a) (b)

Figure 1: Chemical structure of triethoxysilane molecules used for (a) F-SAM and (b) CH3-SAM treatments of the
substrate surface. The arrows indicate the direction of the electric dipole moment.

(a) (b)
F SAM
Intensity(a.u) CH3 SAM
Intensity(a.u.)

after 10 min UV irradiation

initial initial
1500 2000 2500 1500 2000 2500
-1 -1
Raman shift (cm ) Raman shift(cm )
Figure 2: Raman scattering spectra after photo-oxidation of BPO-covered graphene on (a) F-SAM and (b) CH3-SAM
treated substrates.

167
Chan Wook Jang
Seung-Hyun Shin, Joon Soo Kim, Ju Hwan Kim, Suk-Ho Choi
Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin 17104, Korea
sukho@[Link]

Flexible perovskite resistive random access memories

employing graphene transparent conductive electrodes
Perovskite resistive random access memories (RRAMs) have received much attention due to their simple
structure, high operation speed, low power consumption, and excellent scalability [1,2]. Perovskite materials are
recognized as an attractive building block for RRAMs because perovskites exhibit novel dielectric, ferroelectric,
semiconducting, and photosensitive functionalities. Recently, a device structure of Au/perovskites/ITO/
polyethylene terephthalate (PET) has been shown to be well working as flexible RRAMs [3], but ITO is not
suitable for flexible devices. Here, we first report graphene transparent conductive electrode (TCE)-based
flexible organic-inorganic perovskite RRAMs. Figure 1(a) shows a typical MAPbI3 RRAM with graphene TCE on
PET. The RRAM shows remarkable bipolar and bistable resistive switching behaviors with an on-off voltage < 1
V. In addition, the RRAM exhibits excellent bending stabilities, maintaining its initial resistive switching
behaviors even after 1000 bending cycles at a bending curvature radius of 4 mm, as shown in Figure 1(b).
These and other results are discussed based on possible physical mechanisms.

References

[1] Q. Liu, S. Long, H. Lv, W. Wang, J. Niu, Z. Huo, J. Chen, and M. Liu, ACS Nano, 10 (2010) 6162-6168.
[2] S. Gao, C. Song, C. Chen, F. Zeng, and F. Pan, J. Phys. Chem. C, 33 (2012) 17955-17959.
[3] C. Gu and J.-S. Lee, ACS Nano, 10 (2016) 5413-5418.

Figures
(b) 10-3
RESET
-4
10
Current (A)

-5 SET
10
-6
10
-7
Bending cycle
10 0
1000
-8
10
-1.0 -0.5 0.0 0.5 1.0
Voltage (V)

Figure 1: Flexible perovskite RRAM. (a) Schematic diagram of a typical perovskite RRAM with a structure of Au (top
electrode)/CH3NH3PbI3 perovskite layer/graphene (bottom electrode)/PET substrate. (b) Resistive switching properties of
a typical perovskite RRAM after 1000 bending cycles at bending curvature radius of 4 mm. The inset shows a photograph
of a flexible perovskite RRAM.

168
Kaicheng Jia
Hailin Peng*, Zhongfan Liu*
Peking University & Beijing Graphene Institute, Beijing, China
jiakc-cnc@[Link]

Copper Containing Carbon Feedstock for Growing High

Quality Graphene
Abstract
Chemical vapor deposition (CVD) grown graphene holds great potential in controllable regulation and scalable
production, especially for methane gaseous carbon source on Cu substrate. However, it’s still unclear about the
reaction mechanism of cupper and carbon species in the CVD system during high-temperature graphene
synthesis. Herein, we choose copper containing carbon feedstock, Cu(Ac) 2, instead of common CH4, to change
the content of copper in the system and then study the gas-phase reaction kinetics. Meanwhile, additional Cu
cluster will catalyze the decomposition of carbon feedstock and graphitization process, giving high-quality
graphene film without defects and amorphous carbon by-product. Transmittance is higher than 97.5% at 550
nm and the average sheet resistances are lower than 300 Ω sq -1, showing improved optical and electrical
properties of the graphene grown by Cu(Ac)2. This work not only opens up new thought for growing high-quality
graphene film, but also has reference value and significance for the graphene synthesis mechanism.

References

Li, X; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Banerjee, S. K. Science, 6 (2011) 1312.
Hao, Y; Bharathi, M. S.; Wang, L; Liu, Y; Chen, H.; Nie, S; Ramanarayan, H. Science, 10 (2013) 1243879.

Figures

Figure 1: Schematic illustration of the growth of graphene by Cu(Ac)2

169
Minwoong Joe1
Jinhwan Lee1, and Changgu Lee1, 2
1 School of Mechanical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 440-746,
Republic of Korea
2 SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon

440-746, Republic of Korea

mjoe122@[Link]

Dominant in-plane cleavage direction of CrPS4 monolayer

In-plane cleavage directions of 2D crystals are displayed and often well-defined in their flakes exfoliated by the
widely-used scotch-tape method. Here, we investigate the correlation between dominant in-plane cleavage
direction and elastic properties in different directions. CrPS 4 flakes show a preferential in-plane cleavage
direction of 67.5˚, corresponding to <110> direction. To explain it, we calculated directional dependence of
Young’s modulus and fracture energy using first-principles density functional theory calculations. We found that
fracture energy is directly relevant to the in-plane cleavage direction of CrPS4. Our study can provide a facile
approach to figure out the direction of 2D crystals without complex characterization process, which is valuable
for material processing of 2D materials.

References

[1] Joe, M. et al. A comprehensive study of piezomagnetic response in CrPS4 monolayer: mechanical, electronic
properties and magnetic ordering under strains. J. Phys. Condens. Matter 29, (2017) 405801.

Figures

Figure 1: Stress-strain curve of monolayer CrPS4 under different uniaxial directions.

170
Gil-Ho Kim
Muhammad Atif Khan and Servin Rathi
School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology
(SAINT), Sungkyunkwan University, Suwon 16419, South Korea
ghkim@[Link]

Atomically Thin Tunneling Layer for Improved Contact

Resistance and Dual Channel Transport in MoS2/WSe2 van der
Waals Heterostructure
Two-dimensional (2D) material-based heterostructures provide a unique platform where interactions between
stacked 2D layers can enhance the electrical and opto-electrical properties as well as give rise to interesting
new phenomena. Here, the operation of a van der Waals heterostructure device comprising of vertically stacked
bilayer MoS2 and few layered WSe2 has been demonstrated in which an atomically thin MoS2 layer has been
employed as a tunneling layer to the underlying WSe2 layer. In this way, simultaneous contacts to both MoS2
and WSe2 2D layers have been established by forming a direct metal−semiconductor to MoS2 and a tunneling-
based metal−insulator−semiconductor contacts to WSe2, respectively. The use of MoS2 as a dielectric tunneling
layer results in an improved contact resistance (80 kΩ μm) for WSe2 contact, which is attributed to reduction in
the effective Schottky barrier height and is also confirmed from the temperature-dependent measurement.
Furthermore, this unique contact engineering and type-II band alignment between MoS2 and WSe2 enables a
selective and independent carrier transport across the respective layers. This contact engineered dual channel
heterostructure exhibits an excellent gate control and both channel current and carrier types can be modulated
by the vertical electric field of the gate electrode, which is also reflected in the on/off ratio of 104 for both
electron (MoS2) and hole (WSe2) channels.[1] Moreover, the charge transfer at the heterointerface is studied
quantitatively from the shift in the threshold voltage of the pristine MoS2 and the heterostructure device, which
agrees with the carrier recombination-induced optical quenching as observed in the Raman spectra of the
pristine and heterostructure layers. This observation of dual channel ambipolar transport enabled by the hybrid
tunneling contacts and strong interlayer coupling can be utilized for high-performance opto-electrical devices
and applications.

References

[1] Muhammad Atif Khan, Servin Rathi, Changhee Lee, Dongsuk Lim, Yunseob Kim, Sun Jin Yun, Doo-Hyeb Youn,
and Gil-Ho Kim, ACS Appl. Mater. Interfaces 10 (2018) 23961−23967

171
Figures

Figure 1: (a). Schematic diagram of dual channel MoS2-WSe2 heterostructure FET (b). Raman spectra of MoS2, WSe2 and
overlapped MoS2/WSe2 region (the intensity of overlapped region is reduced by a factor of 0.5) (c) Band diagram showing
band structure of pristine MoS2 and WSe2 before transfer (d) Band diagram of MoS2/WSe2 heterostructure illustrating the
formation of depletion region.

Figure 2: (a). Transfer characteristics curve of dual channel FET at Vd = 0.2 V in semi-logarithmic scale (b). Output
characteristics curve of dual channel FET at different back gate voltages (c). Schematic band diagram and device
schematic illustrating the band structure and current flow for positive Vg (d). Schematic band diagram and device
schematic illustrating the band structure and current flow for positive Vg.

172
Ju Hwan Kim
Dong Hwan Jung, Jong Min Kim, Sung Kim, Suk-Ho Choi
Department of Applied Physics and institute of Natural Sciences, Kyung Hee University, Yongin 17104, Korea

sukho@[Link]

Multilayer graphene/conducting polymer/Si nanowires/Si/TiOx

hybrid solar cells
Over the past decade, many researchers have focused on organic materials/Si hybrid solar cells (HSCs) to
reduce the production cost of Si-based solar cells [1,2], but several problems such as big reflective index of Si,
low aperture ratio of the mesa-type metal transparent conductive electrodes (TCEs), and large recombination
loss at Si rear contact should be solved for the practical applications. Especially, poly(3,4-
ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS), a conducting polymer, is not only a
antireflective layer for HSCs but also a hole transporting/optical window that serves as a passivation layer [3].
As one approach for further increase of the power conversion efficiency (PCE), it is necessary to find a method
of enhancing the light absorption of Si, for example, by lowering the refractive index. Si-based nanostructures
such as Si nanowires (NWs) and porous Si are useful for reducing the reflectivity, resulting in higher light
absorption than bulk Si [4]. Here, we report a HSC structure of multi-layer graphene (MLG) TCE/
PEDOT:PSS/Si NWs/n-Si/TiOx (back surface passivation layer) to cope with aforementioned problems.
Resulting maximum PCE is 12.10 %, much larger than that of the planar-Si-type HSC (10.11 %) as a control
sample, mainly due to the lowered reflectance (increased absorption) and recombination loss. As the active
area increases from 14 to 50 mm2, the PCE decreases by only 2.5 % from 12.10 to 9.60 %, possibly resulting
from the area-dependent change in the uniformity of the Si NWs. The PCE shows only a 10% decrease for 30
days under 25 °C temperature and 40% humidity.

References

[1] J. He, P. Gao, Z. Yang, J. Yu, W. Yu, Y. Zhang, J. Sheng, J. Ye, J. C. Amine, and Y. Cui, Adv. Mater. 29 (2017)
1606321.
[2] R. Liu, J. Wang, T. Sun, M. Wang, C. Wu, H. Zou, T. Song, T, X. Zhang, S.-T. Lee, Z. L. Wang, and B. Sun,
Nano Lett. 17 (2017) 4240-4247.
[3] L. He, C. Jiang, H. Wang, D. Lai, and Rusli. ACS Appl. Mater. Interfaces 4 (2012) 1704-1708.
[4] G. Fan, H. Zhu, K. Wang, J. Wei, X. Li, Q. Shu, N. Guo, and D. Wu, ACS Appl. Mater. Interfaces 3 (2011) 721-
725.

Figures
(a) (b)
PEDOT:PSS

MLG

Si NWs/Si InGa
TiOx

Si NWs
Graphene

173
Wenjiang Li
Hui Liang1,Shuang Zhou1, Rony Snyders1,2, Stephan Werner3, Catharina Haebel3,
Peter Guttmann3, Wenjiang Li1*, Carla Bittencourt2
1
Key Laboratory of Display Materials & Photoelectric Devices, School of Materials Science and Engineering,
Tianjin University of Technology, Tianjin 300384, PR China.
2
Chimie des Interactions Plasma Surface, CIRMAP, University of Mons, Mons, Belgium.
3
Research group X-ray microscopy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin,
Germany.

liwj@[Link]

Nanoscale NEXAFS for Probing multi-layer graphene/copper

nanowires composite
Fabrication of conductive patterns on flexible substrates is a key step for the engineering of next generation of
novel flexible devices. In this context, silver based inks have been the preferred one. [1] However, the high cost
and electromigration effect in silver limit its applications. An attractive alternative is the use of copper
nanoparticles provided that their oxidation can be avoided. [2] In this work we report on the synthesis of a
graphene /copper nanowires composite based on a scaled up amine-capped and glucose-based reduction
method. Graphene oxide and CuCl2·2H2O (the precursor), glucose (the reductant), hexadecylamine (HAD) (the
capping agent), water (the solvent) were mixed and the final solution was magnetically stirred. The graphene
/copper nanowires composite was collected by centrifuging the reaction solution and rinsing with deionized
water.
We discuss the potential of graphene as anti-oxidation barrier to avoid an excess of oxidation of the copper
nanowires. [3] Transmission electron microscopy showed the good dispersion of the metal naowires on the
surface of graphene flakes. X-ray photoelectron spectroscopy was used to evaluate the interaction between the
graphene flakes and the copper nanowires. To understand the oxidation and electronic structure of the
synthesized copper hybrid, we have recorded linear polarized NEXAFS with the transmission x-ray microscope
installed at the new U41-XM beamline of the BESSY II synchrotron, Berlin. [4,5] The spectra were normalized
using the signal intensity in the proximity of the sample to correct for intensity variations with the photon energy.
We observed that the oxidation of the copper nanowires is smaller when graphene is added to the synthesis.

References

[1] Yang W, Wang C, Journal of Materials Chemistry C, 4 (2016) 7193.

[2] Kim W J, Lee T J, Han S H, Carbon, 69(2014) 55-65.
[3] Scardamaglia M, Susi T, Struzzi C, et al., Scientific Reports, 7 (2017) 7960.
[4] Peter G, Carla B, Beilstein J Nanotechnol, 6 (2015) 595-604.
[5] Peter G, Stephan W, Stefan R, Catharina H, Gerd S M, Microanal. 24 (2018) 202-203.

Figures

174
Figure 1: X-ray image at 950 eV photon energy from an image stack recorded on the graphene/copper nanowires
composite at the U41 beamline by using the TXM. The NEXAFS–TXM Cu L-edge spectrum was recorded in the area
delimited by the rectangle. The spot indicates the point at which the I0 was recorded

175
Linchao Zeng
Shaohua Chen, Chuang Yang, Lin Qiu and Huiming Cheng
Tsinghua-Berkeley Shenzhen Institute, University Town, Shenzhen, China

292773120@[Link]

Integrated paper-based stretchable LIBs

With the development of technologies, the people's comfort level and experience degree of electronics are
improving. As one developing direction of electronics is flexible and wearable, it puts forward a new request for
energy storage devices.[1] Making energy storage devices flexible and integrating it with flexible electronics can
lead a maximally comfort level and experience degree of electronics for people. Currently, the energy storage
devices for electronics are lithium ion batteries, as lithium ion batteries owns a series of advantages compared
with other energy storage devices. It has a much higher energy density compared with supercapacitors and Na-
ion batteries, and it has a much more wonderful cycling stability compared with lithium-sulfur batteries. So the
flexible energy storage devices for flexible electronics are mostly based on lithium ion batteries. As traditional
lithium ion batteries has no flexible features, lithium ion battery products with excellent flexibility are urgently
needed in the market.[2]
In recent years, scientists has achieved much progress in this field. Paper-based, film-like, fiber-like, textile-like
and some new structure flexible LIBs have been prepared to achieve excellent stability of LIBs. In these
methods, paper-based flexible batteries have advantages like processing easy, low cost and high energy
density.[3] For application, the most important flexible form is stretchable. So, based on paper-based flexible
LIBs, to realize the stretchability of battery is very important. Kirigami has been confirmed a good method to
prepare stretchable LIBs.[4] However, as we known, the inner structure of traditional LIBs may be destroyed
when shape change of battery occurs under outside forces.[5] This will cause mismatch of each layer in battery
and finally cause deterioration of electrochemical performance and safety problem.[6] The destroy of inner
structure of flexible LIBs (especially for kirigami stretchable LIBs) will be more serious as flexible LIBs are
working under dynamic environment. So, the stability and safety problem of kirigami stretchable LIBs will be a
serious challenge for application. Based on these, we used a simple method to prepare kirigami stretchable
LIBs with integrated structure. The alignment quality of each layer is well controlled when stretched and
mismatch of the correlated multiple layers when stretched is avoided in this structure.

References

[1] Zhang, Y.; Zhao, J.; Ren, J.; Weng, W.; Peng, H., Adv. Mater., 28, (2016), 4524-4531.
[2] Liu, W.; Song, M.; Kong, B.; Cui, Y., Adv. Mater., DOI: 10.1002/adma.201603436.
[3] Hu, L.; Wu, H.; Mantia, F.; Yang, Y.; Cui, Y., Acs nano, 10, (2010), 5843-5848.
[4] Song, Z.; Wang, X.; Lv, C.; An, Y.; Liang, M.; Ma, T.; He, D.; Zheng, Y.; Huang, S.; Yu, H.; Jiang, H., Sci. Rep.|
DOI: 10.1038/srep10988.
[5] Cai, W.; Wang, H.; Maleki, H.; Howard, J.; Curzion, E., J. Power Sources 196 (2011) 7779–7783
[6] Zou, B.; Hu, Q.; Qu, D.; Yu, R.; Zhou, Y.; Tang, Z.; Chen, C., J. Mater. Chem. A, 2016, 4, 4117–4124.

176
Figures

Figure 1: Mismatch of the correlated multiple layers between integrated structure and traditional structure

177
Bingzhi Liu
Zhongfan Liu*
Peking University & Beijing Graphene Institute, Beijing, China
1501110298@[Link]

Oxygen-assisted Growth of Highly Conductive Graphene with

Controllable Domain Size on Glass
Abstract
The integration of graphene with glass has broad practical applications, such as smart windows and transparent
heating glass, which could benefit people’s daily life. Direct growth of graphene over glass is efficient and
scalable way to fabricate graphene glass hybrid materials as it avoids the tedious transfer process that involved
introduction of defects and contaminations into graphene film. However, the grain boundaries dominant the
electrical conductivity of the poly-crystalline graphene films when the grain size is smaller than 800nm. [1] By
introducing oxygen into the CVD system, the graphene films directly synthesized on glass with different domain
size can be obtained, which performs different electrical properties. In particular, the domain size of graphene
can be designed to in the range of 100nm to 800 nm in terms of controlling the amount of oxygen in the gas
phase, and the corresponding sheet resistance of the fabricated graphene glass is in the range of 6.1kΩ/sq to
0.9kΩ/sq at the same transmittance of 90%. This method is a simple and effective way to enhance the
electrical conductivity of graphene glass, and promote the development of its application in electronic devices.

References

[1] Ma, T.; Liu, Z. B.; Wen, J. X.; Gao, Y.; Ren, X. B. A.; Chen, H. J.; Jin, C. H.; Ma, X. L.; Xu, N. S.; Cheng, H.
M.; Ren, W. C. Nature Communications, (2017) 8, 9.

Figures

Figure 1: Oxygen-assisted Growth of Graphene with Controllable Domain Size on Glass

178
Fangming Liu
Zhenhua Yan, Fangyi Cheng* and Jun Chen
Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), College of Chemistry,
Nankai University, Tianjin 300071, China.
fycheng@[Link]

Anions inserted into graphite interlayers enhancing the

electrodeposited metal hydroxides for oxygen evolution
Electrochemical deposition is an easy-controlled method to prepare thin films of functional and energy
materials. As for energy storage and conversion applications, freestanding films electrodeposited on varied
conducting substrates are more competent than their conventional counterparts relied on binder and conducting
additives. However, the weak deposit-substrate interaction makes it tough to achieve robust and high-mass
deposition especially on flat substrates, which hinders their practical application. Here we report a universal
strategy with interface enhancement via insertion and reduction of oxyacid anions to electrosynthesize a variety
of metal hydroxides/oxides. Specifically, nitrate ions intercalate into the graphene layers of a graphite substrate
driven by electric field, and then are reduced by cathodic current to form hydroxyls, which in-situ precipitate the
metal cations from the electrolyte. Thus, the nanocrystalline cerium dioxide and amorphous nickel hydroxide co-
electrodeposited on graphite feature a rather tight interface and considerable mass loading after elaborate
manipulation. When employed as electrocatalyst for oxygen evolution reaction in alkaline electrolyte, it exhibits
a low overpotential of 177 mV@10 mA cm−2 and sustains long-term durability over 300 h at a large current
density of 1000 mA cm−2, surpassing the state-of-the-art RuO2 benchmark. The superior electrocatalytic
performance of the interface-enhanced self-supporting metal hydroxide/oxide composite indicates promising
generalization of this efficient technique to fabricate practical robust and high-activity water splitting electrodes
based on low-cost graphite substrates.

References

[1] Yan, Z.; Sun, H.; Chen, X.; Liu, H.; Zhao, Y.; Li, H.; Xie, W.; Cheng, F.; Chen, J. Nat. Commun. 2018, 9, 2373.

179
Figures

Figure 1: (a) schematic two-step synthesis using graphite substrate and nitrate precursors. (b) the reaction mechanisms
of the cathodic electrodeposition of metal hydroxides (M(OH)m or MN(OH)m+n), and oxides (MOx). Mm+ and Nn+ are metal
cations.

180
Jiaman Liu
Jiaman Liu, Liwei Yu, Xingke Cai, Zhengyang Cai, Qiangmin Yu, Lei Tang, Azhar
Mahmood, Usman Khan, Jingyu Xi, Bilu Liu, and Feiyu Kang
Tsinghua-Berkeley Shenzhen Institute, University Town, Shenzhen, China

liujm15@[Link]

Synthesis of wafer-scale single-layer h-BN and its use in

proton transport membrane
Proton exchange membranes (PEMs), as semi-permeable membranes, are designed to transport protons while
impede other species in hydrogen-based technologies such as redox flow battery [1]. Currently, commercialized
PEMs like Dupont’s Nafion is largely recognized for its excellent proton conductivity, chemical stability and
mechanical strength [2]. However, it generally suffers from relatively poor selectivity, leading to ion crossover
issue. This can severely deteriorate the overall performance of electrochemical devices. Recent research on
proton conductivity and isotope separation through two-dimensional (2D) atomic crystals in several proof-of-
concept works show the great potential of these materials, especially graphene and hexagonal boron nitride (h-
BN) [3, 4]. Integration of two-dimensional (2D) hexagonal boron nitride (h-BN) onto commercialized proton
exchange membranes (PEMs) can maintain proton conductivity while improve ion selectivity simultaneously, a
longstanding issue in separation membrane. However, until now, a cost-effective method for centimeter-scale
single-layer h-BN thin film fabrication as well as an efficient method for wafer-scale transfer is still lacking. Here,
we use a space-confined approach and Nafion-supporting-Functional Layer-assisted (Nafion-sFLa) transfer
method to overcome this roadblock, demonstrating the potency of scale-up as PEMs. Around two inch large
single-layer h-BN thin film has been synthesized with high uniformity (Raman peak positions at ~1370 cm-1) and
quality (full width at half maximum of ~16 cm-1). With a transfer efficiency as high as 75%, the h-BN
functionalized membrane has shown ion selectivity three times higher than that of pristine membrane, reaching
more than 30104 S min cm-3. In vanadium flow battery (VFB), the resistance to proton transport of the
sandwich membrane is not affected by the h-BN but the barrier properties of h-BN inhibit vanadium crossover at
low current density (<100 mA cm-2), resulting in significantly improved coulombic efficiency and energy
efficiency, being ~95% and ~92%, respectively. Such Nafion/h-BN/SPEEK sandwich structure may be
promising for future 2D materials-based membrane in separation technology.

References

[1] Ding, C.; Zhang, H.; Li, X.; Xing, F., J Phys Chem Lett, 4, (2013), 1281-94.
[2] Mai, Z.; Zhang, H.; Li, X.; Xiao, S.; Zhang, H., Journal of Power Sources, 196, (2011), 5737-5741.
[3] Hu, S.; Lozada-Hidalgo, M.; Wang, F. C.; Mischchenko, A.; Schedin, F.; Nair, R. R.; Hill, E. W.; Boukhvalov, D.
W.; Katsnelson, M. I.; Dryfe, R. A.; Grigorieva, I. V.; Wu, H. A.; Geim, A. K., Nature, 516, (2014), 227-30.
[4] Lozada-Hidalgo, M.; Hu, S.; Marshall, O.; Mishchenko, A.; Grigorenko, A. N.; Dryfe, R. A.; Radha, B.; Grigorieva,
I. V.; Geim, A. K., Science, 351, (2016), 68-70.

181
Figures

Figure 1: CVD growth of large-area h-BN and its ion transport properties in all vanadium flow battery

182
Mingqiang Liu
Mingqiang Liu, Yi Hou, Simin Feng, Changjiu Teng, Lei Tang, Jiaman Liu, Jie Ren,
Bilu Liu*
Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University,
518055, Shenzhen, P. R. China
E-mail: [Link]@[Link]

Controlled growth and doping of black phosphorus with

tunable properties
Black phosphorus (BP) is a candidate 2D material in optoelectronics owing to its excellent electronic properties
and a tunable bandgap in mid-far infrared region. Doping has been a reliable way to tune bandgap and improve
the properties of BP. However, a uniform and large amount of doping into BP lattice remains a challenge. Here, a
facile approach using CVT reaction furnace under uniform temperature gradient have been applied to synthesize
centimeter-sized, high-quality BP crystals. Compared with tradition gradient temperature furnace, much larger
crystal yield are obtained (more than 90%) using this new approach. Uniform and controllable doping of various
elements are also achieved with the same method. It should be noted that some elements (such as Sb, Bi, Se
and Te) that are normally difficult to doped into BP are successfully obtained here and the doping level is the
highest reported so far. In addition, to understand the growth mechanism, control experiments have been carried
out by tuning various synthesis conditions. Structural and optical characterization show that the synthesized
pristine and doped BP crystals exhibit high crystalline quality. Furthermore, our synthetic approach enables
uniform doping in the lattice of BP crystals, which is evidenced by the XRD, TEM and Raman spectroscopy.
Furthermore, the atomic doping can significantly improve the stability of BP in air, which lays a foundation for the
large-scale development of BP in the field of optoelectronic devices. High tunability of bandgap and work function
via controlling doping type and concentration provides a large variety of choices in real applications.

References

[1] Xia, F., Wang, H., Xiao, D., Dubey, M., & Ramasubramaniam, A. Nature Photonics, 8, (2014), 899-907.
[2] Li, L., Yu, Y., Ye, G. J., Ge, Q., Ou, X., & Wu, H., et al. Nature Nanotechnology, 9, (2014), 372-7.
[3] Bilu Liu , Marianne Köpf , Ahmad N. Abbas , Xiaomu Wang , Qiushi Guo, et al. Advanced Materials, 27, (2015),
4423-4429.
[4] Long M, Gao A, Wang P, et al. Science Advances, 3, (2017), e1700589.
[5] Yang B, Wan B, Zhou Q, et al. Advanced Materials, 28, (2016), 9408-9415.

183
Figures

Figure 1. Experimental setup of BP crystal growth with both uniform and gradient temperature furnace and the

comparison of BP yield with various growth conditions.

184
Yang Liu
Yang Liu, Shibin Yin, Pei Kang Shen*
Collaborative Innovation Center of Renewable Energy Materials, Guangxi University, Nanning, China

Contact@liugedayang@[Link]

Asymmetric 3d Electronic Structure for Enhanced Oxygen

Evolution Catalysis
Abstract
With the deterioration of the environment, human concern with clean energy has increased considerably.
Hydrogen is a relatively cleaner energy, and hence has a wide range of applications in various fields. Hydrogen
can be obtained through many ways, such as electrolysis of water, photo-catalytic water splitting, etc. The
process of water splitting involves the production of hydrogen and oxygen, where the evolution of these gases is
interactional.1 The theoretical voltage of hydrogen and oxygen evolution from water splitting are 0 and 1.23 V,
respectively.2 The Pt/C and IrO2 catalysts have been reported as the best hydrogen and oxygen evolution
catalysts with overpotentials of 0 and 270 mV, respectively.3,4 Obviously, the oxygen evolution reaction (OER) is
the biggest obstacle in water splitting. The oxygen evolution reaction (OER) is a four electron transfer process in
acid or alkaline medium, where OH− loses electrons to become O2. Owing to the fact that the transition metals
(such as Fe, Co, Ni, etc.) possess unpaired d orbital electrons, they can be used to open the O−H bond. But
due to high degree of localization and overspreading of the d orbital, intermediate products (such as Oad,
OOHad) and OHad, OOHad could be resulted, which would be difficult to be desorbed and dissociated,
respectively. In this work, FeS, Ni3S2, Fe5Ni4S8, and N, O, S-doped meshy carbon base were successfully
synthesized. The sample containing Fe5Ni4S8 exhibited excellent OER performance. The density functional
theory calculations indicate that the partial density of states for 3d electrons (3d-PDOS) of Fe and Ni atoms are
changed from monometallic sulfide to bimetallic sulfide at the sulfur vacancy. The asymmetric 3d electronic
structure optimizes the 3d-PDOS of Fe and Ni atoms, and leads to an enhanced OER activity. This work
provides a new strategy to prepare a low-cost electrocatalyst for oxygen evolution with high-efficiency.

185
References
[1] Kanan, M. W.; Nocera, D. G., Science, 321 (2008) 1072−1075.
[2] Zeng, K.; Zhang, D., Prog. Energy Combust. Sci., 36 (2010) 307−326.
[3] Long, X.; Wang, Z.; Xiao, S.; An, Y.; Yang, S., Mater. Today, 19 (2016) 213−226.
[4] Yu, X.; Zhang, S.; Li, C.; Zhu, C.; Chen, Y.; Gao, P.; Qi, L.; Zhang, X., Nanoscale, , 8 (2016) 10902−10907.

Acknowledgment

This work was supported by the Guangxi Science and Technology Prpject (AA17204083, AB16380030).

Figures

Figure 1: The cover of this paper.

Figure 2. Synthesis procedures for meshy carbon materials loaded by carbon-encapsulated Fe5Ni4S8 nanoparticle.

186
Tomoaki Oba
Takamasa Kawanago, Shunri Oda
QNERC and Dept. of EE., Tokyo Institute of Technology, 2-12-1-S9-12, Ookayama, Meguro-ku, 152-8550,
Tokyo, Japan
[Link]@[Link]

Gated Four-Probe Method for Evaluation of Electrical

Characteristics in MoS2 Field-Effect Transistors
Layered semiconductor of transition metal dichalcogenides (TMDC) has been considerable attention
because of their various properties [1]. New classes of semiconductor materials motivate an investigation of
carrier mobility and contact resistance in field-effect transistor configuration from the view point of both scientific
interests and practical applications. This study describes the gated four-probe method to evaluate the relation
between interfacial properties and channel mobility in MoS2 FETs [2, 3].
Heavily-doped p+-type Si wafer was subjected to SPM and 1% HF cleaning. Thermal SiO 2 was grown
by dry oxidation at 1000 oC for 5 min. Subsequently, Al2O3 was deposited by ALD (TMA, H2O, 300 oC) on SiO2.
Au (40 nm)/Ti (10 nm) was deposited by thermal evaporation and lift-off for source/drain contact and two
potential probes. After removal of back side SiO2 with BHF, Au (30 nm) / Ti (10 nm) for back gate contact was
deposited on the back side of the substrate by thermal evaporation. Next, the substrate was subjected to
oxygen plasma to form hydroxyl groups on the surface of Al2O3. Then, the substrate was immersed into 2-
propanol containing 5 mM n-octadecylphosphonic acid (ODPA) for 4 hours at room temperature [4]. Annealing
was conducted at 100 oC in N2 for 30 min to stabilize ODPA. The gate dielectric consists of hybrid
ODPA/Al2O3/SiO2. Mechanically exfoliated MoS2 were transferred to the substrate with the PDMS elastomer.
Finally, devices were annealed in N2 at 150 oC for 30 min to improve source/drain contact. The fabrication
process and device structure are summarized in Fig. 1. Fig.2 shows microscope image of fabricated FET.
The channel mobility were evaluated with four-probe method based on the equations, as shown in Fig.
3. Fig. 4 shows the representative Id-Vd characteristics of MoS2 FET with gated four-probe method. The FET
operation was observed with this four-probe configuration. Fig. 5 shows the representative I d-Vg characteristics
of MoS2 FET without SAM. Hysteresis in clockwise direction was observed. On the other hand, formation of
SAM can suppress the hysteresis in Id-Vg characteristics as shown in Fig. 6. The channel potential was
estimated during Id-Vg measurement using internal two probes between source and drain contact. Fig. 7 shows
the C-V characteristics of Si MOSCAP for SiO2 and Al2O3/SiO2 gate dielectric. The physical thickness of SiO2
was 15.7 nm. The physical thickness of Al2O3 corresponds 14 nm when the dielectric constant of Al2O3 was
assumed to be 8.5. Also, the physical thickness and dielectric constant of ODPA are 2.1 nm and 2.5 [4].
Consequently, the overall capacitance of ODPA/Al2O3/SiO2 is 0.13 m/cm2. Fig. 8 shows Vg dependence of
four-probe conductivity (). The channel mobility (4w) was evaluated from the  using the equation as shown
in Fig. 3. The 4w with SAM is improved as high as 28 cm2/Vs, while the 4w without SAM shows 19.7 cm2/Vs.
The interfacial properties is responsible for the channel mobility of MoS2 FET

Acknowledgments
The authors would like to thank Prof. Y. Kawano, Prof. K. Kakushima, Prof. H. Wakabayashi, and Prof. K.
Tsutsui of Tokyo Institute of Technology for their continuous support in the experiments. This study was
supported by JST-CREST (Grant No. JPMJCR16F4), JSPS Grant-in-Aid for Young Scientists (B) (Grant No.
17K14662) and Yazaki Memorial Foundation for Science and Technology.
References
[1] [Link] et al., Nat. Nanotechnol. 6, 147 (2011).
[2] V. C. Sundar et al., Science, 303, 12, 1644 (2004).
[3] V. Podzorov et al. Appl. Phys. Lett., 84, 3301 (2004).
[4] T. Kawanago et al., Appl. Phys. Lett. 108, 041605 (2016).

187
Figures

Figure 1: Fabrication process and Figure 2: Microscope image Figure 3: Equations to evaluate
device structure. of fabricated FET. channel mobility & contact resistance
with gated four-probe method.

Figure 4: Representative Id-Vd Figure 5: Bidirectional Id-Vg Figure 6: Bidirectional Id-Vg

characteristics of MoS2 FET with characteristics of MoS2 FET characteristics of MoS2 FET with
gated four-probe method. without SAM. SAM.

Figure 7: C-V characteristics of Si Figure 8: Impact of SAM on

MOSCAP for SiO2 and Al2O3/SiO2 channel mobility estimated by four-
gate dielectric. probe method.

188
Takuya Okamoto1,2
Yoshikazu Ito3, Naoka Nagamura4,5, Takeshi Fujita6, Yukio Kawano1,2
1 FIRST, Tokyo Institute of Technology, Tokyo, Japan.
2 Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan.
3 Institute of Applied Physics, Graduate School of Pure and Applied Science, Tsukuba University, Tsukuba,

Ibaraki, Japan
4 National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan
5 Japan Science and Technology Agency, PRESTO, Kawaguchi, Saitama, Japan
6 School of Environment Science & Engineering, Kochi University of Technology, Kochi, Japan

[Link]@[Link]

Three-Dimensional Spatial-Topology Effects,

Magnetoresistance in Three-Dimensional Porous Graphene
Spatial topology is a critical factor for graphene due to its spatial symmetry arranged in hexagonal lattice.
Actually, many studies on spatial-topology modification have been reported, such as 1D or 0D graphene
(graphene nanoribbon [1,2] and quantum dot [3], respectively), antidot system [4,5], and strained graphene
inducing gauge field [19, 20]. As a new platform, upsizing 2D graphene into 3D architectures is also interesting
for exploring new physics. Many theoretical studies on such 3D graphene systems has been reported on
viewpoints of 3D-topology effects [6-8]. Particularly topological defects which are geometrically required to form
3D architecture with negative Gaussian curvatures. Since such 3D-topologyccal effects are expected to bring
intriguing physics, experimentally exploration is strongly demanded.
Recently high-quality 3D graphene which has open porous structure smoothly interconnected graphene
network without edge and fringes [9] have been developed with chemical vapor deposition (CVD) method,. This
3D porous graphene preserves the properties of Dirac fermion well, allowing us to explore interesting
phenomenon only observed in 3D graphene system. Additionally, the 3D-spatial topology such as pore size can
be tune by CVD conditions, providing pore size dependence of curvatures and topological defects. It will provide
a platform for investigating the topological effect. In this report, we experimentally investigated 3D spatial-
topology effects through the electrical transport measurements.
We synthesized open and smoothly inter-connected 3D graphene with different pore size of 100–300 nm and
~1 µm (Figs. 1(a,b)).Raman spectra of these samples demonstrated that the 3D graphene is composed by
single-layer graphene due to the high 2D/G intensity ratios (Fig. 1(c)). We performed magnetoresistance (MR)
measurements at 3.8 K with a standard four probe method in Fig. 2(a). The large pore-sized (~1 µm) sample
shows a conventional positive MR, whereas the small pore-sized (100–300 nm) sample exhibits negative MR
(weak localization). These comparation are a clear indication of the spatial-topology effects on the magnetic-
field correction, showing the strong dependence on spatial topology of the pore size.
According to the theoretical report [10], several scattering rates including elastic scattering events can be
deduced owing to the nature of quasiparticle chirality in graphene. Figure 2(b) plots the T dependence of the
ratio ti-1/ tj-1, where ti-1 and tj-1 are the intervalley and dephasing scattering rate, respectively. It is found that
intervalley scattering event prevails in the sample with small pores at low temperature, and that inelastic
scattering event is dominant regardless of the pore size at high temperature. These results show that the
curvature of graphene surface is strongly related with intervalley scattering events.
Through purely geometrical considerations, 3D graphene structures with high curvature require much
topological defects according to the Euler’s theorem. At topological defects, especially odd-number carbon ring,
when the momentum vector k of carriers revolves around the singularity k = 0 (Γ point), K point reverses to K’
one. It is the main reason of intervalley scattering events. Our findings provide not only deeper understanding
of 3D graphene systems but also pave a new way to realize a spatial-topology controllability of valleys.

189
References

[1] M. Fujita, et al. Journal of the Physical Society of Japan 65 (1996) 1920.
[2] X. Li, et al. science 319 (2008) 1229.
[3] M. Bacon, et al. Particle & Particle Systems Characterization 31 (2014) 415.
[4] J. Eroms, et al New Journal of Physics 11 (2009) 095021.
[5] T. G. Pedersen, et al. Physical Review Letters 100 (2008) 136804.
[6] M. Koshino, et al. Physical Review B 93 (2016) 041412.
[7] H. Aoki, et al. Physica E 22 (2004) 696.
[8] M. Fujita, et al. Physical Review B 51 (1995) 13778.
[9] Y. Ito et, al. Angewandte Chemie International Edition 53 (2014) 4822.
[10] E. McCann, et al. Physical Review Letters 97 (2006) 146805.

Figures

(a) (c)
(c) Pore Size: 1 µm
= 3.98
Intensity
Raman(arb.
Intensity u.)

Pore Size: 100 ~ 300 nm

(b) I2D /IG = 1.91

1000 1500 2000 2500 3000

-1
Raman Shift (cm )

Figure 1: (a,b) Scanning electron microscopy images of the 3D porous graphene with 1 µm (a) and 100–300 nm (b) in a
diameter.

(a) 2
(b)
(%) (%)

TT= 3.8K
= 3.8 K 2 Pore Size
Magnetoresistance

1.5 100 ~ 300 nm

Magnetoresistance

1.5
τi−1 /τϕ−1

1
Pore Size 1
0.5 ~ 1µm Pore Size: ~ 1 µm
Pore Size
100 - 300 nm
Normalized

0 0.5

-0.5 0 4 6 8 2 4 6 8 2
-1 0 1
10 100
Magnetic Field (T)
Temperature (K)

Figure 2: (a) Pore-sized dependence of the normalized magnetoresistance at 3.8 K. (b) Temperature dependence of the
ratio ti-1/tj-1.

190
Young Hee park
Seunghyun Shin, Jong-Guk Ahn and Hyunseob Lim*
Department of Chemistry, Chonnam National University (CNU), Gwangju, 61186, Republic of Korea
pyh7077@[Link]

Electrochemical Surface Modification of Two-

Dimensional Hexagonal Boron Nitride for
Generating Midgap Energy States

The surface funtionalization has been regarded as one of approaches to modulate the
electronic structure of covalent nanomaterials such as carbon nanotube and graphene
sheet. Although two dimensional gexagonal boron nitrde (h-BN) has the similar chemical
structure to that of graphene, the spontaneous chemical reactions for realizing the surface
functionalization on h-BN were rerely reported due to its insulating electronic property. In
general, single electron transfer (SET) process from nanomaterial to organic molecules is a
prerequisite process for radical-based functionalization reactions, but SET from insulating
material is restricted because of zero density of states near the Ferima level of insulating
material. Herein, we present the new chemical route to facilitate the direct functionalization
on insulator, h-BN. Aryl groups were successfully functionalized on the h-BN by the
electrochemical reduction reaction of 4-BBDT. A The electrochemical process can drive the
electron tunneling from working electrode to 4-BBDT through h-BN film (both monolayer
and multilayer) by electron tunneling process, and produce the highly reactive diazonium
radical on its surface. Then, aryl radicals can be covalently functionalized on h-BN surface.
In addition, this rapid reaction process can modulate the electronic structure of h-BN. We
believe that our demonstration does not only provide fundamental insights for developing
the surface functionalization reaction on 2D materials, but also can advance the
applications of h-BN-based optoelectric devices

References

[1] Weng, Q.; Wang, X.; Wang, X.; Bando, Y.; Golberg, D. Chem. Soc. Rev, 45, (2016), 3989.
[2] Song, L.; Ci, L.; Lu, H.; Sorokin, P. B.; Jin, C.; Ni, J.; Kvashnin, A. G.; Kvashnin, D. G.; Lou, J.; Yakobson, B.
I.; Ajayan, P. M. Nano Lett. 10, (2010), 3209.
[3] Sainsbury, T.; Satti, A.; May, P.; Wang, Z.; McGovern, I.; Gun’ko, Y. K.; Coleman, J. J. Am. Chem. Soc. 134,
(2012), 18758.

191
Figures

Figure 1: h-BN-4BBDT electrochemical reaction

192
Jieqiong Qin
Zhong-Shuai Wu*
Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, China

wuzs@[Link]

Two-Dimensional Pseudocapacitive Nanosheets for All-Solid-

State Micro-Supercapacitors
Two-dimensional (2D) pseudocapacitive materials, characterized by nanoscale dimension in thickness, infinite
length in the plane and reversible redox reactions, are currently regarded as groundbreaking electrode
candidates for micro-supercapacitors (MSCs). Here, we synthesized ultrathin MnO2 nanosheets and
mesoporous polypyrrole-based graphene nanosheets uniformly anchored with redox polyoxometalate
(mPPy@rGO-POM). Further, a novel and universal mask-assisted filtration technology for the simplified
fabrication of all-solid-state planar MSCs was developed. Remarkably, the resulting MSCs exhibited outstanding
areal capacitance and volumetric capacitance, exceptionally mechanical flexibility, excellent cyclability and
impressive serial or parallel integration for modulating the voltage or capacitance.

References

[1] Qin, J.Q., Wu, Z.-S.*, Zhou, F., Dong, Y.F., Xiao, H., et al. Chinese Chemical Letters, 29 (2018), 582-586.
[2] Qin, J.Q., Zhou, F., Xiao, H., Ren, R.Y., Wu, Z.-S*. Science China Materials, 61 (2017), 233-242.

Figures

Figure 1: Fabrication schematic, materials characterizations and electrochemical performance of all-solid-state planar
MSCs based MnO2 nanosheets.

193
Figure 2: Materials synthesis and characterizations of mesoporous polypyrrole-based graphene nanosheets anchoring
redox polyoxometalateand for all-solid-state planar MSCs.

194
A. Sasagawa1
T. Okamoto1, Y. Harada2, S. Nakano2, W. Norimatsu2, M. Kusunoki3, and Y.
Kawano1
1First, Dept of Electrical and Electronic Engineering, Tokyo Institute of Technology, 152-8552, Tokyo, Japan.
2Depertment of Materials Chemistry, Nagoya University, 464-8603, Nagoya, Japan.
3Institute of Materials and Systems for Sustainability, Nagoya University, 464-8603, Nagoya, Japan.

[Link]@[Link]

Direct observation of Plasmons

in Graphene Quantum Dots
with Scanning Near-Field Optical Microscopy
Surface Plasmon Polariton (SPP) in two-dimensional graphene has been applied to a wide range of fields such
as photo-detectors [1, 2], bio-sensing [3], and optical communications [4]. In recent years, nanostructured
graphene such as graphene nanoribbons and graphene quantum dots (GQDs) downsized in dimension attracts
much attention as materials with novel SPP characteristics arising from nanostructures. Actually they have been
studied by many spectroscopic techniques and these research opens the path for new functionalities [5]. These
measurements, however, only show area-averaged optical response and nanoscale measurements have not
been made due to diffraction limit. To explore and realize more SPP functionalities, understanding real-space
characteristics in detail is indispensable.
To investigate such nanoscale spatial characteristics, a scattering scanning near-field optical microscopy (s-
SNOM) provides a strong tool for accessing optical response of nanostructures. Mutual near-field interaction
between highly-confined optical fields on an AFM tip and a sample provides high spatial resolution ~ 10 nm
beyond the diffraction limit. Through the s-SNOM measurements, many nanoscale investigations have been
reported including graphene [6]. In this work, we achieved to directly observe SPP in GQDs by using s-SNOM.
Interestingly, the results indicate unique SPP frequency dependence derived from the nanostructure.
We synthesized epitaxial-GQDs with a diameter of ~40 nm on SiC substrate by a thermal decomposition method.
For optical measurements, we utilized the s-SNOM equipped with a CO2-gas laser at the wavenumber of 929.02
cm-1. Figure 1 schematically illustrates the experimental setup. Figures 2 (a) and (b) display an AFM phase image
and a near-field amplitude image, respectively. We succeeded in directly observing dot-like plasmon
luminescence from the GQDs. Additionally, by utilizing monochromatic measurement (CO2 gas laser) and
nanoscale spectroscopy, we observed strong frequency dependence of SPP in GQDs, which is in strong contrast
to 2D graphene on SiC.
Our findings indicate the geometric controllability of the SPP characteristics in nanostructured graphene,
providing not only a deeper understanding of nanostructured graphene but also a new pathway to realize new
functional SPP properties in a wide frequency range from terahertz and infrared regime.

References

[1] T. Mueller., et al, Nat. Photonics vol.4, 2010, 297-301.

[2] Y. Liu, et al. Nat. commun vol. 2, 2011, 1-7.
[3] D. Rodrigo, et al, Science vol. 349, 2015, 165-168.
[4] A. Pospischil, et al, Nat. Photonics vol. 7, 2013, 892–896.
[5] V. W. Brar., et al, Nano Letter vol. 13(6), 2013, 2541-2547.
[6] J. Chen, et al, Nature volume 487, 2012, 77–81.

195
Figures

Figure 1: Schematic of the s-SNOM measurement

Figure 2: (a) AFM phase image. The black arrows indicate the GQDs with ~40 nm in a diameter. (b) Near-field amplitude
image (929.02cm-1) of the GQDs. The dot-like plasmonic luminescence is clearly visible.

196
Jingyuan Shan
Di Wei*, Zhongfan Liu*
Peking University & Beijing Graphene Institute, Beijing, China
shanjy-cnc@[Link]

Graphene-Armored Aluminum Foil as Current Collectors for

High-voltage Lithium-Ion Battery with Enhanced performance
Abstract
Lithium-ion batteries (LIB) have become one of the most promising power sources to meet the ever increasing
demand for high-performance electric devices. Recently, the issue of corrosion happened on aluminum (Al) foil
began to receive attention. In order to improve the potential of cathode to improve the energy density of LIB, it’s
crucial to solve the problem of the corrosion of Al foil. Here, we directly grow graphene film on commercial Al foil
for current collectors via plasma-enhanced chemical vapor deposition (PECVD) method and take it as
electrically conductive coating layers and interfacial barrier layers to enhance the anticorrosion performances of
Al foil at high voltage in LIB. It is demonstrated that Al foil armored by such graphene film shows significantly
reinforced anodic corrosion resistance and LiNi0.5Mn1.5O4 cells using graphene-armored Al foil (GAl) as current
collectors show enhanced cycling performance compared to the cells with pristine Al foil. Moreover, the rate
performance is also improved due to the graphene nanosheet grown by PECVD improving the adhesion
between active materials and current collectors. This work not only contributes to the long-term stable
operations of LIBs but also provides feasibility for next-generation high-voltage lithium ion batteries.

References

[1] M. Wang, M. Tang, S. Chen, H. Ci, K. Wang, L. Shi, L. Lin, H. Ren, J. Shan, P. Gao, Z. Liu and H. Peng, Adv.
Mater., 2017 1703882.
[2] T. Ma, G. L. Xu, Y. Li, L. Wang, X. He, J. Zheng, J. Liu, M. H. Engelhard, P. Zapol, L. A. Curtiss, J. Jorne, K.
Amine and Z. Chen, J. Phys. Chem. Lett., 8 (2017) 1072.

Figures

Figure 1: Enhanced anticorrosion performance and electrochemical performance of GAl. (a,b) Long-term cycling
performance of LNMO/GAl and LNMO/Al cells; (c) Rate performances of LNMO/GAl and LNMO/Al cells; (d,e)
SEM images of pristine Al foil and GAl after cycling; (f) EIS analysis of LNMO/GAl and LNMO/Al cells.

197
Xiaoyu Shi
Zhong-Shuai Wu and Xinhe Bao
Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, China.

shixiaoyu@[Link]

Graphene based linear tandem micro-supercapacitors

We demonstrate the printable fabrication of new-type planar graphene-based linear tandem micro-
supercapacitors (LTMSs) on diverse substrates with symmetric and asymmetric configuration, high-voltage
output, tailored capacitance and outstanding flexibility. The resulting graphene-based LTMSs consisting of 10
single device present a high-voltage output of 8 V, the layer by layer graphene/conductive polymer-based
LTMSs show enhanced capacitance and the asymmetric LTMSs exhibit higher output voltage and energy
density. This work offers numerous opportunities for one-step scalable fabrication of flexible tandem energy
storage devices.
References

[1] X. Shi, Z.-S. Wu, J. Qin, S. Zheng, S. Wang, F. Zhou, C. Sun and X. Bao, Adv. Mater. 29 (2017), 1703034.

Figures

Figure 1: Fabrication schematic and electrochemical performances of graphene based linear tandem micro-
supercapacitors consisting of 10 single device.

Figure 2: Fabrication schematic and electrochemical performances of high-capacitance and asymmetric graphene based
linear tandem micro-supercapacitors.

198
Seung-Hyun Shin
Dong Hwan Jung, Jong Min Kim, Chan Wook Jang, Sung Kim, Suk-Ho Choi
Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin 17104, Korea
sukho@[Link]

MAPbI3 Perovskite Solar Cells Employing Flexible n-Type

Graphene Transparent Conducting Electrodes
Metal halide-based organic-inorganic hybrid perovskite solar cells (PSCs) have been actively studied in recent
years due to the rapid increase in their efficiency [1]. Integrating graphene into PSCs has especially attracted
much attention because graphene provides promising flexibilities in device designs due to its excellent structural,
electrical, and optical properties [2]. In addition, graphene is very useful as a flexible transparent conductive
electrode (TCE) that can replace brittle transparent conductive oxides (TCOs) such as indium tin oxide and F-
doped tin oxide [3]. Despite successful application of graphene TCEs for PSCs [4], no use of n-type graphene
as a TCE has been reported until now. However, most of the active scaffolds are based on n-type metal-oxide
electron transfer layers such as TiO2, Al2O3, and ZnO because they play an important role in achieving high
efficiency in PSCs. Therefore, studies on n-type graphene TCEs are very important for PSCs. Here, we
fabricate n-i-p-type MAPbI3 PSCs by employing Ag nanowires (Ag NWs)-doped graphene with high
transmittance (T) and low sheet resistance (Rs) as an n-type graphene TCE. With increasing the doping
concentration (nA) to 0.3 wt%, the Rs monotonically decreases to ~ 52 Ω/sq whilst the T decreases by about
10%. Due to the nA-dependent trade-off correlation between the Rs and T, the ratio of DC conductivity/optical
conductivity is the highest (~ 62) at nA = 0.1 wt%, resulting in 15.80 and 13.45% power conversion efficiencies
for the PSCs on rigid and flexible substrates, respectively.

References

[1] Q. Chen, N. De Marco, Y. Yang, T. B. Song, C. C. Chen, H. X. Zhao, Z. R. Hong, H. P. Zhou, and Y. Yang, Nano
Today, 10 (2015) 355-396.
[2] H. S. Jung and N. G. Park, Small, 11 (2015) 10-25.
[3] H. Zhou, Q. Chen, G. Li, S. Luo, T. Song, H.-S. Duan, Z. Hong, J. You, Y. Liu, and Y. Yang, Science, 345 (2014)
542-546.
[4] A. Mei, X. Li, L. Liu, Z. Ku, T. Liu, Y. Rong, M. Xu, M. Hu, J. Chen, Y. Yang, M. Grätzel, and H. Han, Science,
345 (2014) 295-298.

Figures

Figure 1: (a) A schematic of a typical TCO-free n-i-p-type planar PSC with a structure of glass/Ag NWs-doped
graphene/ZnO/MAPbI3/poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA)/Au and (b) its band diagram.

199
Seunghyun Shin, Young Hee Park
Jong-Guk Ahn and Hyunseob Lim
Department of Chemistry, Chonnam National University (CNU), Gwangju, 61186, Republic of Korea
sshssh146@[Link]

Direct Covalent Functionalization of Single Layer 2H-MoS2

Electrografting of Diazonium Salt: Influence of S vacancy and
S-C bond on Photoluminescence of 2H-MoS2

Two-dimension materials such as graphene, hexagonal boron nitride (h-BN) and transition metal
dichalcogenides (TMD) have lots of advantages for various applications due to their two-dimensional (2D)
geometric structure. Among them, 2D-TMD materials, has attracted great attention as an alternative to
graphene, since it has semiconducting properties while graphene has metallic properties. Thus, it cannot also
be used in electronic applications, but also in optical and optoelectronic applications. Although single layer
MoS2 has a bandgap of ~1.8 eV, the modulation of its bandgap is further required to absorb or emit the wider
range of light. Surface modification is one of approaches, but the one-step functionalization on 2H-TMDs has
been known to be difficult, while various reactions on 1T- TMDs have been demonstrated. The origin of the
limitation is attributed to the difficulty of electron transfer from 2H-TMD to reacting molecules due to due to its
semiconducting property and neutral charge state, which is a prerequisite process for the surface
functionalization. Herein, we present the novel approach facilitating the direct surface functionalization of 4-
bromobenzene diazonium tetraborate (4BBDT) on 2H-MoS2, one of TMD materials, by electrochemical process.
The successful functionalization was confirmed by Atomic force microscopy, Raman spectroscopy and spatially
resolved X-ray photoelectron spectroscopy (XPS) combined with scanning photoelectron microscopy (SPEM).
The widened band-gap of modified 2H-MoS2 was also confirmed by photoluminescence spectroscopy. In
addition, the modified optical bandgap was confirmed on the aryl-functionalized MoS2 sheet by
photoluminescence (PL) measurement. The systematic experimental studies combined with theoretical
calculation have revealed the influence of S vacancy and S-C bond, created by the electrochemical modification,
on the change in PL of the modified MoS2. We believe that our demonstration does not only provide
fundamental insights for developing the surface functionalization reaction on 2D materials, but also can advance
the practical applications of TMD-based optoelectric devices.

200
References

[1] Chhowalla, M., et al., Nat. Chem. 2013, 5, 263.

[2] Wang, Q. H., et al. Nat. Nanotechnol. 2012, 7, 699.
[3] Lim, H., et al. Langmuir. 2010, 26 (14), 12278-12284.
[4] Song, I., et al. RSC Adv. 2015, 5 (10), 7495-7514.

Figures

Figure 1: Schematic illustrations showing the experimental set up for electrografting of 4-BBDT on MoS2/Pt, and the
expected reaction

201
Li Shuan
Wu Yanqing, Li Xingguo, Zheng Jie
College of Chemistry and Molecular Engineering, Peking University, Beijing, China

15652783232@[Link]

Annealing temperature effect on microstructure, optical and

electrical properties of nanometer GdYOx high k films
Abstract
In this work, Metal-oxide-semiconductor (MOS) capacitors with sputtering-deposited ternary GdYOx high k
gate dielectric thin films were fabricated by magnetron co-sputtering method on p-type Si substrates. Annealing
temperature dependent microstructure, morphology, chemical bonding states, optical and electrical properties of
nanometer GdYOx gate dielectric thin films were systemically investigated by x-ray diffraction, atomic force
microscopy, x-ray photoelectron spectroscopy, optical spectroscopy and electrical measurements. Results have
shown that the 500°C-annealed GdYOx composite films as well as those samples annealed at lower
temperatures keep amorphous state. With the sample annealed at 600 °C, however, the amorphous phase
disappears and the nanometer particles films were formed. The increase in band gap energy has been found
with increasing the annealing temperature and maximum band gap is reached to 5.55 eV. Electrical properties
of all samples based on Pt/Si/GdYOx/Pt MOS capacitor have been investigated by means of the high frequency
capacitance-voltage (C-V) and the leakage current density-voltage (I-V) characteristics. It shows improved
performances at the annealing temperature of 500 °C, such as high dielectric constant (k) of 20.2, lowest
current density of 1.44 10-2A/cm2(at Vfb-1V). In addition, the leakage current mechanism for 500 °C-annealed
sample has been discussed in detail. 500°C-annealed GdYOx thin films can be acted as potential high-k gate
dielectrics in future CMOS devices.

References

[1] J. Robertson, R.M. Wallace, Materials Science & Engineering R-Reports, 88 (2015) 1-41
[2] T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, Materials Science in Semiconductor Processing, 70
(2017) 260-264.
[3] L. Zhu, G. He, Z.Q. Sun, M. Liu, S.S. Jiang, S. Liang, W.D. Li, Journal of Sol-Gel Science and Technology, 83
(2017) 675-682.
[4] L. Zhu, G. He, W. Li, B. Yang, E. Fortunato, R. Martins, Nontoxic, Advanced Electronic Materials, 4 (2018)
1800100.

Figuresa

202
Figure 1:(a) Schematic diagram of GdYOx film prepared by magnetron sputtering. (b) Cross-sectional SEM image of a
GdYOx film deposited on a silicon substrate. (c) TEM image, (d-f) EDS mapping of original sputtering GdYOx thin films

Figure 2: (a) Schematic diagram of Pt/ GdYOx/p-Si MOS capacitors. (b) C-V characteristics, (c) I-V characteristics and (d)
k value and current density of GdYOx thin films as a function of annealing temperature.

203
Shubin Su
Haihua Tao, Hao Li, Zhenhua Ni, Dong Qian, Guanghui Yu, Xianfeng Chen
State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Physics
and Astronomy, Shanghai Jiao Tong University, 200240 Shanghai, China.
shubinsu@[Link]
[Link]@[Link]

Water-based Graphene Patterning under Ultraviolet Irradiation

Abstract: Magnetic-assisted UV ozonation has been proposed to be an alternative cost-effective method for
patterning microscale graphene microstructures, immune to organic contamination and substrate damage [1,2].
However, the low oxidizing intensity and lateral diffusion of the instable intermediate of ozone molecule appear
detrimental to the quality of graphene patterning. Herein, we propose to pattern chemical vapor deposition
grown graphene film through a stencil mask using a stronger oxidant of paramagnetic OH (X 2 Ⅱ) radicals
photodissociated from water (H2 O) molecules under ultraviolet (UV) irradiation [3]. The OH (X 2 Ⅱ) radicals
move directionally toward graphene surface in an inhomogeneous vertical magnetic field ( BZ = 0.51 T ,
∇BZ = 160 T ∙ m−1 ), strongly enhancing the oxidation intensity. Another photodissociated product of
paramagnetic H (12 S) radicals together with the stable water molecule explain the improved lateral under-
oxidation. The water-based graphene patterning under UV irradiation is applicable to graphene-based electronic
and optoelectronic devices.

References

[1] Y. Wu, H. Tao, S. Su, H. Yue, H. Li, Z. Zhang, Z. Ni and X. Chen. Sci. Rep. 7 (2017), 46583–46590.
[2] H. Yue, H. Tao, Y. Wu, S. Su, H. Li, Z. Ni, X. Chen. Phys. Chem. Chem. Phys. 19 (2017), 27353.
[3] K. H. Welge, and F. Stuhl. J. Chem. Phys. 46(1967), 2440.

Figures

a b

204
c d

Figure 1: Water-based graphene patterning under UV irradiation through a copper mask. SEM topographical images of (a)
the copper mask and (b) the corresponding microstructural graphene pattern; (c) Its optical topographical image with a
line representing the defect mode (D band), and (d) the detailed Raman spectrum evolution. Both scale bars are 10 μm.

205
Chia-Liang Sun1,2,*
Chia-Heng Kuo1, Cheng-Hsuan Lin1, Ben-Son Lin1
1Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 33302, Taiwan (ROC)
2Department of Neurosurgery, Linkou Chang Gung Memorial Hospital, Taoyuan 33305 Taiwan (ROC)
sunchialiang@[Link]

Photoassisted Electrochemical Biosensing Using Graphene

Oxide Nanorribons
We have investigated graphene oxide nanoribbons (GONRs) for a variety of applications since 2011. [1-11] This
conference paper presents a photoassisted biosensor based on GONRs. Images and graphitic structures of
GONRs were monitored by transmission electron microscopy and. Raman spectroscopy, respectively. The C1s
spectra and energy bandgaps of GONR swere collected by using X-ray photoelectron spectroscopy as well as
UV-vis spectroscopy. Finally, the GONRs were adopted to modify the screen print carbon electrodes (SPCE) for
the electrochemical detection of uric acid (UA) with the help of AM 1.5 light source in the power density of 100
mW/cm2. In cyclic voltammetry analyses, all Faradaic currents for UA oxidation increased more than 20 %. In
the low concentration region, the photocurrent sensitivity was about 4 times higher than that of dark current.
Therefore, the significantly improved UA sensing was demonstrated by photoassisted electrochemical detection
by adopting GONRs.

References

[1] C. L. Sun et al. ACS Nano 5 (2011) 7788.

[2] L. Y. Lin et al. J. Mater. Chem. A 1 (2013), 11237.
[3] Y. J. Lu et al. Carbon 74 (2014) 83.
[4] M. H. Yeh et al. J. Phys. Chem. C 118 (2014) 16626.
[5] C. L. Sun et al. Biosens. Bioelectron. 67 (2015) 327.
[6] X. Lu et al. J. Mater. Chem. A 3, (2015) 13371.
[7] R. Zhang et al. Anal. Chem. 87, (2015) 12262.
[8] Y. W. Lan et al. Nano Energy 27, (2016) 114.
[9] C. H. Su et al. ACS Omega 2(8), (2017) 4245.
[10] T. E. Lin et al. Angew. Chem. Int. Ed. 56, (2017) 16498.
[11] R. Zhang et al. Carbon 126, (2018) 328.

Figures

(a)
(b)

Figure 1: (a) Cyclic voltammograms in the electrolyte containing 0.1 M PBS + 0.3 mM UA using GONR(200 W). (b)
Faradiac currents for photoassisted UA oxidation for GONRs unzippied under differnt microwave powers.

206
Luzhao Sun
Li Lin, Hailin Peng*, Zhongfan Liu*.
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National
Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University,
Beijing 100871, P. R. China
Beijing Graphene Institute, Beijing 100094, P. R. China

zfliu@[Link], hlpeng@[Link]

Visualizing the Fast Growth of Large Single-Crystalline

Graphene
Chemical vapor deposition (CVD) technique has been demonstrated to be promising in growing large-area and
high-quality graphene. However, the CVD-grown graphene is usually polycrystalline, which would degrade the
electronic and mechanical properties. Consequently, to decrease the density of grain boundary, large single-
crystalline graphene (LSCG) is synthesized via low supply of carbon source, which unfortunately exhibits low
growth rate. Thus, fast growth of LSCG is an urging problem to realize the industrial growth of graphene film
with high quality, which requires the in-depth understanding of the growth dynamics. Herein, we visualized the
entire growth process of LSCG by using carbon isotopic pulse-labelling technique in conjunction with the
Raman identification. The investigation of growth dynamics unveils the roles of carbon source in controllable
growth of LSCG. By carefully tuning the carbon source supply, centimeter-sized graphene single crystals with
high growth rate are realized.

References

Figures

[1] Sun, L.; Lin, L.; Zhang, J.; Wang, H.; Peng, H.; Liu, Z. Nano Res. 10 (2016) 355-363
[2] Lin, L.; Sun, L. Z.; Zhang, J. C.; Sun, J. Y.; Koh, A. L.; Peng, H. L.; Liu, Z. F. Adv. Mater. 28 (2016) 4671-4677.

Figure 1: (a) schematic of visualizing fast growth of LSCG. (b) Optical image and Raman intensity maps of isotopic
labeled LSCG. (c) Domain size as a function of growth time.

207
Yan Sun
Yan Sun,a Wei Li,a Hui Yang,b Carla Bittencourt,c Wenjiang Li,a* Rony Snydersc
aKey Laboratory of Display Materials & Photoelectric Devices, School of Materials Science and Engineering,
Tianjin University of Technology, Tianjin 300384, PR China.
bTaizhou Brance of Zhejiang-California International Nan systems Institute, Taizhou, 318000, PR China.
cChimie des interactions Plasma-surface, University of Mons (Umons), 20 place du parc, 7000 Mons,

Belgium.
457479076@[Link]

In-suit Assembled MoS2/Reduced Graphene Oxide

Aerogels as an Efficient Catalyst Application for HER
Electrocatalysis
Layered transition metal dichalcogenides (TMDs) semiconductor MoS2 composed of three-atom stacked layers
(S-Mo-S) has been recognized as one of the most common candidates of HER electrocatalysts due to their low-
cost, naturally abundant and electrocatalytic activities, and somehow can be considered as the pioneer of this
class of electrocatalysts [1]. At the same time, it is vital role of carbonaceous nanomaterials that as a catalyst
support for the development of any potential HER electrocatalyst, even in the case of noble metal catalysts [2-3].
In this work, the 3D non-noble MoS2/rGO hybrid aerogels catalysts was successfully synthesized, made up of
the 2D layered transition mental dichalcogenides (TMDs) MoS2 nanoflowers and the 3D carbonaceous
nanomaterials rGO aerogels, via a one-pot hydrothermal route. In the hybrid 3D MoS2/rGO aerogels, rGO
aerogels act as catalyst support for MoS2, while the MoS2 nanoflowers tight and well-decorated on the rGO
nanofilms, which allows the hybrid aerogels with a very large surface area, defective structure, abundance of
active sites, and high conductivity. All the above factors make the hybrid aerogels are characterized by excellent
optimization in electrocatalytic hydrogen evolution reaction (HER).

References

[1] Yang S, Feng X, Ivanovici S, Mullen K, Angewandte Chemie-International Edition, 49 (2010) 8408-8411.
[2] Wang H, Robinson J T, Li X, et al., Journal of the American Chemical Society, 131 (2009) 9910.
[3] Zhu C, Liu T, Qian F, et al., Nano Letters, 16 (2016) 3448-3456.

Figures

Figure 1: SEM image of MoS2/rGO-10 sample (a) and the Tafel plots of the MoS2/rGO with the content of 5 wt%, 10
wt%, 25 wt%, MoS2, rGO and GO.

208
Ze Lin Tan
Ken Liu, Zhi Hong Zhu
National University of Defense Technology, No. 109 Deya Road, Kaifu District, Changsha, China

zelin_tan@[Link]

Photoluminescence properties of WS2 under optical irradiation

Two-dimensional transition metal dichalcogenides, like monolayer MoS2 and WS2, have been promising
materials for on-chip light sources due to its direct-bandgap and convenient transfer characteristics [1]. Though
these materials have more efficient optical gain and are easily integrated or transferred on various substrates,
their photoluminescence properties can be influenced by ambient environment[2], different from Ⅲ - Ⅴ
compound semiconductors. We show that the photoluminescence spectra of WS2 are different on various
substrates, and changes under continuous violet laser illumination. Because atmospheric moisture and oxygen
adsorbed on WS2 induce p-doping by chemical reaction [3], the densities of trions and neutral excitons have
changed, resulting in the enhancement of photoluminescence intensity. However the monolayer WS2 will be
damaged by long-time laser irradiation. In order to extend the lifetime of WS 2, we coated it with Al2O3 to isolate
air, and the stability was indeed improved. To design a commercial on-chip light sources, there are further
studies required to do on these monolayer materials.

References

[1] X. Wang, K. Kang, S. Chen, R. Du, E. H. Yang,2D Mater. (2017) 4, 025093.

[2] Y. Yu, Y. Yu, C. Xu, Y. Q. Cai, L. Su, Y. Zhang, Y. W. Zhang, K. Gundogdu, L. Cao, Adv. Funct. Mater (2016) 26,
4733.

[3] N. Peimyoo, W. Yang, J. Shang, X. Shen, Y. Wang, T. Yu, ACS Nano (2014) 8, 11320.

Figures

Figure 1: Schematic diagram illustrating light emission from monolayer WS2 on substrate under violet laser irradiation

209
Chao Wang1,2
Qiang Fu1 and Xinhe Bao1,3
1StateKey Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences,
Zhongshan Road 457, Dalian 116023, China
2University of Chinese Academy of Sciences, Beijing 100049, China
3University of Science and Technology of China, Hefei 230026, China

Chao0354@[Link]

In-situ investigations of the rechargeable aluminum ion battery

by XPS, Raman and optical microscope
Rechargeable aluminum ion battery is one of the most promising energy storage device owing to crustal
abundance, high theoretical power density and excellent safety [1]. In 2015, Dai’s group developed a novel
aluminum ion battery (AIB) consisting graphitic foam cathode, aluminum anode, and AlCl3/1-ethyl-3-
methylimidazolium chloride (EMIC) ionic liquid (IL) electrolyte exhibited ultrafast rechargeable rate and excellent
cycle stability [2]. However, the fundamental science problems of AIB have been rarely studied by researchers.
Herein, we built a model battery consisting highly oriented pyrolytic graphite (HOPG) cathode, Al foil anode and
AlCl3/EMIC IL electrolyte. The same electrochemistry performance as the real ones such that the in-situ studies
using Raman, XPS, and optical microscope can be performed with the model battery. By designing the transfer
chamber and sample holder, in-situ XPS investigated of the electrochemical intercalation process of
chloroaluminiate anion-graphite system has been achieved for the first time. Except for XPS Al and Cl signals,
we also observed the increase of N1s signal. We believe that there exists the co-intercalation of EMI+ and AlCl4-
, which has been further proved by in-situ Raman. By analyzing the binding energy, the electronic structure
(work function, charge transfer) change of the graphite cathode has been revealed during the intercalation
process. Furthermore, the in-situ observation of the HOPG during charging and discharging process via optical
microscope could provide some intuitive information such as the diffusion of ions, color and macrostructure
change of HOPG.

References
[1] Li, Q. & Bjerrum , N. J et al J. Power Sources 110, (2002) 1–10.
[2] Lin M C, Dai H J et al Nature 520 (2015) 325-328

Figures

Figure 1: Left: the schematic diagram of the Al|EMIC-AlCl3 (1:1.3 by mole) |HOPG model battery, notice that only one
end of HOPG is submerged by electrolyte. Middle and right: CV curve (scan rate is 0.5mV/s) and the voltage profile of first
five cycles, which exhibit the same performance with the real ones [2].

210
Figure 2: In-situ Raman spectra of the uncovered part of the HOPG electrode during charging process. Except for the
typical change of the G band, the AlCl4- (~350cm-1) and EMI+ (~600cm-1) have also been detected.

Figure 3: Similarly with the in-situ Raman, in-situ XPS spectra was collected from the uncovered part of HOPG electrode
during charging process. As expected, the intensity of Al 2p and Cl 2p would increase because of the intercalation and the
C 1s decrease because of the expansion. Furthermore, we also found the increase of N 1s signal. Combined with the
Raman spectra, we assumed that there exsit the co-intercalation of AlCl4- and EMI+.

211
Presenting Author：Sen Wang
Co-Authors：Zhong-Shuai Wu
Dalian Institute of Chemical Physics, CAS., 457 Zhongshan Road, Dalian, China.

Contact@E-mail:senwang@[Link]

Scalable Fabrication of Monolithic Micro-

Supercapacitors with Tailored Geometries for On-Chip Energy
Storage

Abstract
Single-step scalable fabrication of micro-supercapacitors (MSCs) with both high energy and power densities is
still challenging. To address this, we demonstrate the scalable fabrication of graphene-based monolithic MSCs
with diverse planar geometries and capable of superior integration by photochemical reduction of graphene
oxide/TiO2 nanoparticle hybrid films. The resulting monolithic MSCs can operate well in a hydrophobic
electrolyte of ionic liquid (3.0 V) at a high scan rate of 200 V s-1, two orders of magnitude higher than those of
conventional supercapacitors. More notably, the MSCs show landmark volumetric power density of 534 W cm -3
and energy density of 13.2 mWh cm-3, both of which are among the highest values attained for carbon-based
MSCs. Therefore, such monolithic MSC devices based on photochemically reduced, compact graphene films
possess enormous potential for numerous miniaturized, flexible electronic applications.

References

[1] S. Wang, Z.S. Wu*, S.H. Zheng, F. Zhou, C.L. Sun, H.M. Cheng, X.H. Bao, ACS Nano,11, (2017), 4283.
[2] S. Wang, S.H. Zheng, Z.S. Wu*, C.L, Sci. Sin. Chim., 46 (2016), 732.
[3] S.H. Zheng, X.Y. Tang, Z.S. Wu*, Y. Z. Tan, S. Wang, C.L. Sun, H.M. Cheng, X.H. Bao, ACS Nano, 11, (2017),
2171.
[4] Z. S. Wu*, Y. Z. Tan, S.H. Zheng, S. Wang, K. Parvez, J.Q. Qin, X.Y. Shi, C.L. Sun, X.H. Bao, X.L. Feng*, K.
Müllen*, J. Am. Chem. Soc., 139, (2017), 4506.

Figures

Figure 1: Scheme of fabricating PRG-MSCs with various tailored planar geometries.

212
Yijing Wang*
Weiqin Li, Yan Zhang, Huinan Guo
Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), College of Chemistry,
Nankai University, No. 94 Weijin Road, Tianjin, China
E-mail: wangyj@[Link]

Rational design of 1D mesoporous MnO@C nanorods as

anode material for improved Li-storage properties
As the rapid emerging of portable intelligent products and electromobile, lithium ion batteries (LIBs) have
become the leading force of energy storage devices, due to its miniature and portability, high energy density,
high working potential (~ 3.7 V) and long life span. [1],[2] As an anode material for commercial LIBs, graphite has
not met the demand of energy storage market owing to its low specific capacity (372.0 mA h g-1) and inferior
rate capability.[3],[4] Accordingly, it is of utmost urgency to develop an advanced anode material for LIBs
application. Transition metal oxides (TMOs), owing to their high theoretical capacity and abundant resources,
have attracted many researchers’ attentions. Among them, MnO has been considered as promising anode
candidate because of cost-effective, abundant resources and low reduction potential (~ 0.3 V vs. Li+/Li).[5]
However, MnO still have not escaped from intrinsic disadvantages, which are low electrical conductivity and
large volumetric expansion during the charge-discharge processes. In order to address these challenges, we
adopt in situ carbon coating method to synthesize 1D mesoporous MnO@C nanorods via a solvothermal
reaction coupled with subsequent thermal treatment. In the preparation process, the homogeneous in situ
carbon coating has been realized, and the diameter and pore size of nanorods are well regulated because of
the solvent effect. According to different volume ratio of H2O and isopropanol (IPA) in solvothermal reaction, the
resultants are named as MnO@C-1 (the mixture: 40 ml IPA), MnO@C-2 (the mixture: 20 ml IPA and 20 ml H2O)
and MnO@C-3 (the mixture: 40 ml H2O). As an anode for LIBs, MnO@C-3 displays remarkable excellent rate
capability (1202.6 mA h g-1 at 0.1 A g-1 and 1085.7 mA h g-1 at 2.0 A g-1 with the capacity retention of 90.3%).
This fantastic improvement of electrochemical performances benefits from the synergistic effect of well-
designed structure characteristics. Firstly, lots of carbon coating nanoparticles gather into 1D nanorods and
form a large conductive network, which can immensely enhance material conductivity. Secondly, mesoporous
structure can effectively remit the volume expansion and increase the contact area of electrode/electrolyte,
contributing to lithiation and delithiation. These characteristics improve transfer efficiency of ion/electron during
the charge-discharge processes, greatly upgrading rate capability.
This work was financially supported by the MOST (2016YFA0202500), NSFC (51471089, 51501072 and
51571124), MOE (IRT13R30), NSFT (17JCYBJC17900), and 111 Project (B12015).

References
[1] Zheng, M.; Tang, H.; Li, L.; Hu, Q.; Zhang, L.; Xue, H.; Pang, H. Adv. Sci., 3 (2018), 1700592.
[2] Li, W.; Song, B.; Manthiram, A. Chem. Soc. Rev., 10 (2017), 3006-3059.
[3] Zhu, S.; Li, J.; Deng, X.; He, C.; Liu, E.; He, F.; Shi, C.; Zhao, N. Adv. Funct. Mater., 9 (2017), 1605017.
[4] Guo, H.; Chen, C.; Chen, K.; Cai, H.; Chang, X.; Liu, S.; Li, W.; Wang, Y.; Wang, C. J. Mater. Chem. A, 42 (2017),
22316-22324.
[5] Zhang, K.; Han, X.; Hu, Z.; Zhang, X.; Tao, Z.; Chen, J. Chem. Soc. Rev., 3 (2015), 699-728.

213
Figures

Figure 1: The schematic illustration of preparation process for 1D mesoporous MnO@C nanorods.

Figure 2: (a-b) SEM images, (c) TEM image and (d) HR-TEM image of MnO@C-3.

Figure 3: (a) CV curves with the potential of 0-3 V at the scan rate of 0.1 mV s-1 for MnO@C-3. (b) The rate capabilities of
MnO@C-1, MnO@C-2 and MnO@C-3.

214
Jindi Wei
Gengmin Zhang
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking
University, Beijing, China

weijindi@[Link]

Fabrication of a graphene edge based field emitter and its

electron emission properties
Abstract
Graphene edges based field emitters were designed in this paper, which could be fabricated by using a scalable
process. Advantages of the vacuum tube and transistor could be combined. The nanoscale vacuum tubes can
provide high frequency/power output while satisfying the metrics of lightness, cost, lifetime, and stability at harsh
conditions, and the operation voltage can be decreased comparable to the modern semiconductor devices.
TWO pages abstract format: including figures and references.

References

[1] Han J W, Oh J S, Meyyappan M, Applied Physics Letters, 100 (2012) 1858

[2] Kumar S, Duesberg G S, Pratap R, et al, Applied Physics Letters, 105 (2014) 927
[3] Wang H M, Zheng Z, Wang Y Y, et al, Applied Physics Letters, 96 (2010) 666
[4] Ji X, Wang Q, Zhi T, et al, Acs Applied Material Interfaces, 8 (2016) 3295

Figures

(a)

(b)
Figure 1: (a)Top and (b) lateral view of the graphene based field emitters

215
Yongpeng Xia
Li Zhao, Xia Yang, Huanzhi Zhang, Fen Xu, Lixian Sun*
(Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin
University of Electronic Technology, Guilin, 541004, P. R. China

sunlx@[Link]

Significant improved dehydrogenation of LiAlH4 doped with

two-dimensional Ti3C2
Lithium alanate (LiAlH4) has attracted intense interest as one of the most promising candidates for hydrogen
storage due to its high hydrogen storage capacity (10.5 wt%) and low cost. However, the drawbacks of its
dehydrogenation process are the relatively high temperatures and the slow dehydrogenation kinetics. In this
study, a two-dimensional Ti3C2 MXene was doped into LiAlH4 to improve its hydrogen storage properties. The
composition evolution and dehydrogenation performance of the as-prepared sample were characterized by
means of XRD (X-ray diffraction), FT-IR (Fourier transform infrared spectroscopy) and Sieverts-type pressure-
composition-temperature apparatus (PCT) measurements, respectively. LiAlH4-5 wt% Ti3C2 samples start to
release hydrogen at 48.8 °C, which is 154.2 °C lower than that of as-received LiAlH4. Isothermal desorption
measurements show that the 5 wt% Ti3C2-doped sample releases 5.3 wt% of hydrogen within 15 min at 200 °C.

This work was financially supported by the National Natural Science Foundation of China (Grant No. 51361005,
U1501242, 51371060, 51671062, 51102230 and 51462006), the Guangxi Natural Science Foundation (No.
2014GXNSFAA118319, 2014GXNAFDA118005, 2014GXNSFAA118401 and 2013GXNSFBA019244), Guangxi
Key Laboratory of Information Materials (161002-Z, 161002-K), Guangxi Scientific Technology Team
(2012GXNSFGA06002).

Figures

Figure 1: Fig.1 SEM images of Ti3C2 Fig.2 Volumetric release curves of the prepared samples.

216
Fen Xu*
Chaochao Xu, Fen Xu*, Lixian Sun*
(School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, P. R.
China
xufen@[Link]

Synthesis of bio-based porous carbon and its application in

supercapacitors
Supercapacitors have widespread applications in the field of electrical energy storage devices due to their high
power density, fast charge-discharge rate and environmental friendliness1. Nowadays, porous carbon materials,
especilly biomass carbons, have been widely used in supercapacitors due to their low cost and sustainability. In
this work, we synthesized bio-based porous carbon using cycas leaves as carbon precursor and urea as the
nitrogen source; Namely, the dried cycas leaves firstly is burned at 300 oC and then activated by KOH
containing urea at 700 oC. Experimental results show that the as-prepared bio-based carbon material displays
high specific surface area and suitable pore size for supercapacitor. The supercapacitor performance of as-
prepared bio-based carbon material has been investigated in a 2-electode system (see Fig. 1). As shown in Fig.
1a, the CV curves of as-prepared carbon material show an approximate rectangular shape at all voltage scan
rates. Its linear GCD curves at all current densities appear an isosceles triange (see Fig. 1b). According to
literature established equations2, their specific capacitances are 260 F/g at 0.5 A/g and 203 F/g at 10 A/g (78%
of the capacitance retention), respectively. Meanwhile, its energy density for the supercapacitor is about 9.13 W
h/kg at a power density of 125 W/kg. In addition, an energy storage device was fabricated (see Fig.1c). Fig. 1c
demonstrates that the simple energy storage device can power for a light-emitting diode (LED).
Acknowledgements
This work was supported by the National Natural Science Foundation of China (U1501242 and 51671062), the
Guangxi Collaborative Innovation Centre of Structure and Property for New Energy and Material
(2012GXNSFGA06002), Guangxi Science and Technology Project (AD17195073), Guangxi Major Science and
Technology Special Project (AA17202030-1) and the Guangxi Key Laboratory of Information Laboratory
Foundation (161002-Z, 161002-K and 161003-K).
References

(1) P. Simon, Y. Gogotsi and B. Dunn, Science 343, 2014, 1210–1211.

(2) Cunjing Wang, Dapeng Wu, Hongju Wang, et al, Journal of Materials Chemistry A, 6, 2018, 1244-1254.

Figures

Figure 1: CV curves at various scan rates of 5–200 mV/s; b: GCD curves tested at 0.5 – 10 A/g; c: a energy storage
device of supercapacitors made by as-prepared bio-carbon material.

217
Aikai Yang
Zhiqiang Luo, Qing Zhao, Jun Chen*
Key Laboratory of Advanced Energy Materials Chemistry (MOE), College of Chemistry, Nankai University,
Tianjin 300071, China
chenabc@[Link]

Organic Molecules Grafted onto Graphene

Enable Superior Lithium-Ion Batteries
Abstract
A key challenge faced by organic electrodes is how to promote the redox reactions of functional groups to
achieve high-rate capability and long cycling life. One efficient strategy is to stitch organic molecules onto
insoluble substrates and inhibit the dissolution. Graphene is a promising alternative with high electronic
conductivity, two-dimensional pores and intrinsically insoluble features, which favors promoting the diffusion of
ions and conduction of electrons and suppressing the dissolution of organic active materials into aprotic
electrolytes. Here we report that the combination of poly(imide-benzoquinone) (PIBN) and tetralithium salts of
2,5-dihydroxyterephthalic acid (Li4C8H2O6) with the graphene substrate exhibits high electrochemical
performance in lithium ion batteries for organic electrodes based on the in-situ synthesis and recrystallization
method. This enables large reversible specific capacities of 271 (0.1 C) and 193 (10 C) mA h g-1 and retention
of 86% after 300 cycles for PIBN-graphene (PIBN-G) composite as well as over 1000 cycles at 10 C and high
capacities of 191 and 121 mA h g–1 after 100 and 500 cycles for the Li4C8H2O6-graphene (Li4C8H2O6-G)
composite. Our results indicate a useful strategy for obtaining high-performance organic batteries and a
practical way of application of graphene.

References

[1] Z. Luo, L. Liu, J. Ning, K. Lei, Y. Lu, F. Li, J. Chen, Angew. Chem. Int. Ed., 57(2018) 9443-9446
[2] Q. Zhao, J. Wang, C. Chen, T. Ma, J. Chen, Nano Res., 10(2017) 4245-4255

Figures

Figure 1: a. Schematic of PIBN-G composite. b. SEM image with an inset of TEM image of PIBN-G. c and d.
Discharge/charge profiles and cycle stability of PIBN-G. e. Schematic of Li4C8H2O6-G composite. f. TEM image of
Li4C8H2O6-G composite. g and h. Discharge/charge profiles and cycle stability of all-organic symmetrical cells with the
Li4C8H2O6-G composite as both the anode and the cathode.

218
Yusi Yang
Xia Wang, Shun-Chang Liu, Zongbao Li, Zhaoyang Sun, Chunguang Hu, Ding-
Jiang Xue,* Gengmin Zhang* and Jin-Song Hu*
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking
University, Beijing, China

yangys1995@[Link]

Weak Interlayer Interaction in Anisotropic GeSe2

As an emerging anisotropic material with wide band gap, GeSe2 is regarded as a promising candidate for
polarization-dependent devices, such as polarization-sensitive photodetectors and optical waveplates. Except
for in-plane anisotropies, another unique property, weak interlayer coupling, is firstly discovered in this work.
Here, electronic structures of GeSe2 are investigated and a minor change is found from monolayer to bulk.
Cleavage energy, interlayer binding energy and interlayer differential charge density are also calculated,
demonstrating that GeSe2 processes much weaker interlayer coupling when compared with BP, a typical
represent of anisotropic materials. Experimental studies including Raman spectra of different thickness and
temperature-dependent Raman spectroscopy further confirm weakly coupled layers in GeSe2. Our results
introduce GeSe2 as a complement to anisotropic two-dimensional material family with weak interlayer
interaction.

References

[1] S. Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y.-S. Huang, C.-H. Ho, J. Yan, D. F. Ogletree, S.
Aloni, J. Ji, S. Li, J. Li, F. M. Peeters, J. Wu, Nature Communications 5(2014), 3252.
[2] Y. Jing, Y. Ma, Y. Li, T. Heine, Nano Lett. 17(2017), 1833-1838.
[3] Y. Zhao, J. Qiao, P. Yu, Z. Hu, Z. Lin, S. P. Lau, Z. Liu, W. Ji, Y. Chai, Adv. Mater. 28(2016), 2399-2407.

Figures

Figure 1: Interlayer differential charge density of (a) GeSe2 and (b) BP, respectively.

219
Minjie Yao
Xinyu Wang, Zhiqiang Niu*, Jun Chen
Key Laboratory of Advanced Energy Materials Chemistry (MOE), College of Chemistry, Nankai University,
Tianjin 300071, China
zqniu@[Link]

Large-Area Reduced Graphene Oxide Composite Films

for Flexible Asymmetric Sandwich and Microsized
Supercapacitors
Abstract
Asymmetric supercapacitors have attracted tremendous attention in energy storage devices due to their
enhanced energy density. The development of asymmetric supercapacitor matching with diverse and flexible
electronic devices depends mainly on the preparation of flexible components and the design of various
configurations. Graphene and its derivatives are typical 2D materials and can serve as the building blocks to
construct freestanding macroscopic graphene with porous structures, high electrical conductivity and excellent
mechanical flexibility. Herein, a spontaneously reducing/assembling strategy in alkaline condition is developed
to fabricate large-area reduced graphene oxide (RGO) and RGO-metal oxide/hydroxide composite films or
microsized structures. The obtained pure RGO and RGO/Mn3O4 composite films possessing porous structure
and superior mechanical property can directly serve as the electrodes of flexible asymmetric sandwish
supercapacitors. Furthermore, the interdigital RGO and RGO/Mn3O4 patterns are also assembled via a
selectively reducing/assembling process to achieve the asymmetric microsized supercapacitors. These
asymmetric supercapacitors with different configurations exhibit excellent electrochemical performance and
flexibility. Such reducing and assembling strategy provides a route to achieve large-area RGO-based films and
microsized structures for the applications in the various fields such as energy storage and photocatalysis.
References

[1] X. Wang, Niu Z.*, et al. Adv. Funct. Mater. 2018,28,1707247

Figures

Figure 1: Schematic illustrating the synchronously reducing/assembling strategy in an alkaline solution to prepare the
RGO and RGO/Mn3O4 electrodes of a) asymmetric sandwich and b) microsized supercapacitors. c) Schematic
mechanism of synchronously reducing and assembling RGO/Mn3O4 composite film in NH3·H2O solution on Zn surface. d)
XRD patterns of RGO and RGO/Mn3O4 films. e) SEM image of RGO/Mn3O4 composite film. f) Optical image of a
RGO/Mn3O4 composite film (≈1200 cm−2). g) CV curves under different values of L/L0, inset optical images: L0 is the initial
length of substrates, and L is the distance between two ends of films in different bending states. h) CV curves of two
asymmetric microsized supercapacitors in series and a single device, scan rate: 10 V s−1. i) GCD curves of the two
asymmetric microsized supercapacitors in series and a single device, current density: 0.4 mA cm−2.

220
Shilu Yin
Lixian Sun, Fen Xu, Yongpeng Xia, Feifei Wang, Jinyang Hu, Jinghua Li
Guilin University of Electronic Technology, 1 Jinji Road, Guilin, China
shiluy@[Link]

Synthesis and electrochemical properties of phosphorus

doped GO/porous carbon
Supercapacitor is a kind of green device between traditional capacitor and battery, because of its
high power density, light weight, multiple charge and discharge, long cycle life as well as
maintenance-free, and become a new type of energy storage device [1]. As an useful, efficient,
environmental friendly energy storage device, It has broad prospects. Graphene has excellent optical,
mechanical and electrical properties. Graphene oxide has attracted much attention because of its
lamellar structure and high conductivity. In recent years, many researchers have used GO to make
electrode materials for supercapacitors. Porous carbon as one of promising materials is widely used in
supercapacitors. And adding GO in carbon materials can effectively improve the conductivity of carbon
materials. However, pure carbon material due to its surface hydrophobicity, large internal resistance, its
development has been severely constrained[2]. The introduction of phosphorus elements, can effectively
enhance the performance of porous carbon[3]. Therefore, phosphorus doped GO/porous carbon
materials in recent years has been a wide range of attention and research.
In this study, As the precursor, phosphorus doped GO/sodium alginate composite by sol-gel
method. At the same time, sodium alginate and GO as carbon source, sodium hypophosphite as
phosphorus source while Iron nitrate as catalyst and porogenic agent. The precursor was freeze-dried
for 48 hours and activated by KOH. Finally, the mixture was carbonized to 700 degrees in N2
atmosphere to obtain phosphorus doped GO/porous carbon. The results showed that the mass ratio of
sodium alginate to sodium hypophosphite was 1:1, the porous carbon material possesses the best
electrochemical performance with a high specific capacitance of about 348 F g-1 at a current density of
0.5 A g-1. Moreover, its cyclic voltammetry curve shows a good rectangular shape. From the SEM, It was
obviously find that the GO lamellar structure interspersed and constructed three-dimensional porous
carbon materials. As a result, the composite porous carbon materials demonstrate an effective
improvement of the performance for the electric double layer capacitor and great potential in
supercapacitors.

References

[1].Q Long ,W Chen ,H Xu ,X Xiong ,Y Jiang etc. Energy & Environmental Science , 2013,6 (8) :2497-2504
[2]. X Yan ,Y Liu ,X Fan ,X Jia ,Y Yu etc, Journal of PowerSources , 2014 , 248 (248) :745-751
[3]. J Chen ,H Wei ,H Chen ,W Yao , H Lin etc, Electrochimica Acta , 2018 , 271

221
Figures

Figure 1. the charge discharge curves of 0.40-GO/SA at current density from 0.5 A g-1 to 20A g-1

Figure2. SEM of 0.40-GO/SA at 20K magnification

222
Zhengxuan Yin
Chenchen Wang, Kaixiang Lei, Fujun Li
Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), College of Chemistry,
Nankai University, Tianjin 300071, PR China
fujunli@[Link]

High Na/K-storage performance of bismuth enabled by ether-

based electrolytes

Abstract
Sodium and potassium-ion batteries have attracted extensive attention due to the abundance and low cost of
sodium and potassium resource. However, large size of Na +/K+ and formation of dendrite make it hard to find
appropriate anode materials. Alloying anodes provide high capacity and modest voltage but suffer from large
volume change and pulverization. Here, we reported bulk bismuth with excellent Na/K-storage performance
enabled by ether-based electrolytes. During cycling, the electrode undergoes reversible phase reactions of Bi
↔ NaBi ↔ Na3Bi and KBi2↔ K3Bi2↔ K3Bi, respectively. In ether-based electrolytes, a stable solid electrolyte
interface is formed and the morphology of the electrode also gradually develops into a porous network, realizing
fast kinetics and tolerance of its volume change. Both stable solid electrolyte interface and porous morphology
contribute to the good performance in sodium-ion battery and potassium-ion battery. This interplay between
electrolyte and electrode to boost Na/K-storage performance will pave a new way in energy storage.

References

[1] Kaixiang Lei, Chenchen Wang, Luojia Liu, Yuwen Luo, Chaonan Mu, Fujun Li, and Jun Chen Angew .Chem.
2018, 57,4687–469
[2] Chenchen Wang, Liubin Wang, Fujun Li, Fangyi Cheng, and Jun Chen Adv. Mater. 2017, 29, 1702212

223
Huanzhi Zhang
Yongpeng Xia, Rong ji, Chaowei Huang, Fen xu, Lixian Sun*
Guilin University of Electronic Technology, No.1 Jinji Road, Guilin, China

zhanghuanzhi@[Link]; sunlx@[Link]

Graphene-enhanced Composite Phase Change Materials for

Thermal Energy Storage
Abstract
Graphene is quite famous for its high specific surface area (≥2600 m2 g−1) and superior thermal conductivity of
5000 W/(m・K) [1]. Thus, graphene has been used widely as a filler to fabricate highly thermal conductive
composites. [2] In addition, graphene is light in weight and meanwhile possesses inherent good flexibility, high
tensile modulus or Young's modulus (1100 GPa) and the ultimate strength (116 GPa) [3]. Consequently,
graphene was considered as an ideal material to improve thermal conductivity and comprehensive
performances of composite phase change materials (PCMs) in our present studies. Firstly, three-dimensional
graphene (3D-GA) was creatively synthesized through hydrothermal methods using graphene oxide (GO) as a
precursor and ethylenediamine (EDA) as a moderate reducing agent. And n-octadecane (OD)/3D-GA
composite PCMs were successfully prepared by solution impregnation and vacuum impregnation methods.
Structural characterization and morphology of the composite PCMs confirm that there was no strong chemical
interaction between OD and 3D-GA, and OD was successfully filled into the porous structure of 3D-GA by
physical interaction (observed from Figure 1(a)). Furthermore, the composites have a much better phase
change property, and the melting enthalpy and crystallization enthalpy can reach 195.70 J g -1 and 196.67 J g-1,
respectively. Moreover, the composite PCM has excellent thermal cycling stability and the phase change
enthalpy almost has no obvious change after 60 times of DSC thermal cycling (observed from Figure 1(b)). The
thermal conductivity of the composite PCMs can be enhanced to 1.636 W m-1 K-1 indicating a connected
thermal conductive network between OD and 3D-GA. Secondly, we used PEG as PCMs, 4,4’-diphenylmethan
diisocyanate (MDI) as the cross-linking agent, and GO was selected as a supporting skeleton to design a
novel polymer based solid-solid composite PCMs. Results reveal that GO nano-sheets induced a regular
lamellar structure and an interconnected thermal conductive network for the composite PCMs, and PEG was
homogeneously intercalated into the GO nano-sheets(observed from Figure 2). This molecular structure
supplies the SSPCMs with excellent phase change behavior, good thermal cycling stability and high thermal
conductivity. As a result, the SSPCMs display a fast thermal-response rate and outstanding thermal regulating
performance, which can maintain their temperature in the range of 50 °C ~ 57 °C for about 410 s.

References

[1] O. C. Compton, S. B. T. Nguyen, Graphene Oxide, Highly Reduced Graphene Oxide, and Graphene: Versatile
Building Blocks for Carbon-Based Materials, Small 6 (2010) 711-723
[2] S. Park, S. He, J. Wang, A. Stein, C. W. Macosko, Graphene-polyethylene nanocomposites: Effect of graphene
functionalization, Polymer 104 (2016) 1-9.

Figures

224
Figure 1: SEM images and thermal -regulating properties of OD/3D-GA composite PCMs

Figure 2: SEM images (a) and TEM images (b) of solid-solid composite PCMs

225
Jincan Zhang
Hailin Peng*, Zhongfan Liu*
Peking University & Beijing Graphene Institute, Beijing, China
zhangjc-cnc@[Link]

Super-clean graphene film: synthesis, transfer and

applications
Abstract
The atomically thin two-dimensional nature of suspended graphene membranes holds promising in numerous
technological applications. In particular, the outstanding transparency to electron beam endows graphene
membranes great potential as a candidate for specimen support of transmission electron microscopy (TEM).
However, major hurdles remain to be addressed to acquire an ultraclean, high-intactness, and defect-free
suspended graphene membrane. Here, we have achieved a polymer-free clean transfer of sub-centimeter-sized
graphene single crystals onto TEM grids to fabricate large-area and high-quality suspended graphene
membranes. Through the control of interfacial force during the transfer, the intactness of large-area graphene
membranes can be as high as 95%, prominently larger than reported values in previous works. Graphene liquid
cells are readily prepared by π-π stacking two clean single-crystal graphene TEM grids, in which atomic-scale
resolution imaging and temporal evolution of colloid Au nanoparticles were recorded. This facile and scalable
production of clean and high-quality suspended graphene membrane is promising towards their wide
applications for electron and optical microscopy.

References

[1] Hao, Y.; Bharathi, M. S.; Wang, L.; Liu, Y.; Chen, H.; Nie, S. Science 342, 720 ( 2013).
[2] Lin, Y. C ; Lu, C. C. ; Yeh, C. H; Jin, C. Nano Lett. 12, 414 (2012),.

Figures

Figure 1: Schematic illustration of the procedures from clean transfer of graphene single crystals to fabrication of
graphene liquid cells

226
Qiu Zhang
Zhe Hu, Yanying Lu, Jun Chen*
Key Laboratory of Advanced Energy Materials Chemistry (MOE), College of Chemistry, Nankai University,
Tianjin 300071, China
chenabc@[Link]

Two-dimension Sulfide Anodes for Sodium-ion Batteries

Two-dimension (2D) materials, such as molybdenum disulfide (MoS2), iron disulfide (FeS2), have received
widely interest in electrode materials for rechargeable batteries owing to their 2D structure, low cost, natural
abundance and high theoretical capacity. Here, we report the application of MoS2[1], FeS2[2] as the anodes of
sodium-ion batteries. Based on the selected compatible ether-based electrolyte and the tuned cut-off voltage,
both of two sulfides show an intercalation mechanism rather than a conversion reaction, refraining from the
huge volume change caused by phase conversion. MoS2 nanoflower with expanded interlayer shows high
discharge capacities of 350 mAh g–1 at 0.05 A g–1, and 195 mAh g–1 at 10 A g–1. FeS2 microsphere exhibits
high-rate capability (170 mAh g–1 at 20 A g–1) and long-term cycling (~90% capacity retention for 20000 cycles)
The superior electrochemical performance of the two sulfides demonstrates the feasibility for their practical
application.

References

[1] Z. Hu, L. Wang, K. Zhang, J. Wang, F. Cheng, Z. Tao, J. Chen, Angew. Chem. Int. Ed., 53(2014), 12794–12798.
[2] Z. Hu, Z. Zhu, F. Cheng, K. Zhang, J. Wang, C. Chen, J. Chen, Energy Environ. Sci., 8(2015), 1309–1316.
[3] Y. Lu, N. Zhang, S. Jiang, Y. Zhang, M. Zhou, Z. Tao, L. A. Archer, J. Chen, Nano Lett., 17(2017), 3668–3674.

Figures

Figure 1: (a) XRD patterns of the MoS2 samples and (b) HRTEM images of FG-MoS2. (c) The charge-discharge curves
from 1st to 300th cycle and (d) the cyclic properties at different rates of FG-MoS2. (e) XRD patterns and (f,g) SEM images
of FeS2 microspheres and commercial FeS2. (h) Charge-discharge profiles at 1 A g–1 at different temperatures. (d) Cycling
performance of FeS2 microspheres.

227
Shuqing Zhang
Xiaolong Zou, Huiming Cheng
Tsinghua-Berkeley Shenzhen Institute, Nanshan I Park, Shenzhen, China

zhangshuqing@[Link]

High temperature half-metallicity in 2D CoGa2X4 (X=S, Se, Te)

The recent discovery of intrinsic ferromagnetic CrI3 and Gr2Ge2Te6 within 70 K creates huge potential for
spintronic applications of 2D van der Waals crystals.[1, 2] However, large spin polarization, high phase transition
temperature and controllable spin direction are crucial requirements for the spintronic applications of atomically
thin magnets. Here, we discover a class of CoGa2X4 (X= S, Se or Te) monolayer with triangular lattice exhibiting
intrinsic half-metallic ferromagnetism. They have large spin gaps in the semiconducting channel, ranging from
2.7 eV for CoGa2S4 to 1.7 eV for CoGa2Te4, which makes them stable against the spin flip under weak external
disturbances. The magnetocrystalline anisotropy (MAE) calculation with spin-orbital couplingSOC indicates
CoGa2X4 possesses easy plane magnetization, which is expected to have a Berezinskii–Kosterlitz–Thouless
transition by classical XY model. The critical temperatures are 886 K, 752 K, and 719 K for CoGa 2S4, CoGa2Se4
and CoGa2Te4, respectively. The MAE of CoGa2X4 are 47 eV for X=S, 84 eV for X=Se and 622 eV for
X=Te. The in-plane magnetic moments change to out-of-plane direction if the lattice constants increase from
3.623 Å to 3.75 Å (increase 3.5%), which can be realized through substrate mismatch or other bilayer strain
methods. The proposed half-metallic CoGa2X4 system belongs to the big family of layered AB2X4 compounds,
which is a significant part of layer-type phases. The stable and steerable magnetization with 100% spin-
polarization ratio of CoGa2X4 would broaden the available design space for spintronics, and connect the
magnetic with electronic properties together in 2D materials.

References
[1] Huang, B.; Clark, G.; Navarro-Moratalla, E.; Klein, D. R.; Cheng, R.; Seyler, K. L.; Zhong, D.; Schmidgall, E.;
McGuire, M. A.; Cobden, D. H.; Yao, W.; Xiao, D.; Jarillo-Herrero, P.; Xu, X.; Nature 546 (2017), 270-273.
[2] Gong, C.; Li, L.; Li, Z.; Ji, H.; Stern, A.; Xia, Y.; Cao, T.; Bao, W.; Wang, C.; Wang, Y.; Qiu, Z. Q.; Cava, R. J.;
Louie, S. G.; Xia, J.; Zhang, X., Nature 546 (2017), 265-269.

Figure 1: (a) Side view of CoGa2X4 structure; (b) Schematic map of MAE for CoGa2X4 monolayer. (c) With the increase of
lattice parameters, the in-plane magnetic moments vary to out-of-plane direction.

228
Shuang Zhou
Shuang Zhou1, Carla Bittencourt2, Stephan Werner3, Catharina Haebel3, Peter
Guttmann3, Wenjiang Li1*, Rony Snyders1,2
1Key Laboratory of Display Materials & Photoelectric Devices, School of Materials Science and Engineering,
Tianjin University of Technology, Tianjin 300384, PR China.
2Chimie des Interactions Plasma Surface, CIRMAP, University of Mons, Mons, Belgium.
3Research group X-ray microscopy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin,

Germany.

1467693061@[Link]

Reduced graphene oxide/carbon hybrid aerogels from

cellulose and graphene oxide for oil/water separation
Recently, reduced graphene oxide/carbon hybrid (RGO/CH) aerogels with outstanding physicochemical
properties have exhibited potential application in widespread fields, and therefor attracted extensive attention.
RGO/CH aerogels are synthesized by pyrolysis of graphene oxide /cellulose aerogels that are prepared by
dissolving of cellulose in N-methylmorpholine-N-oxide (NMMO) monohydrate solvent, a nontoxic and
environmentally friendly solvent, followed by gelation, regeneration and freeze drying. The prepared RGO/CH
aerogel possesses a low apparent density in the range of 0.073-0.156 g cm-3, and presents highly hydrophobic
and oleophylic properties with a high water contact angle up to 112˚ (Figure1a). The porous 3D network
structure of RGO/CH aerogels makes it to be an excellent candidate as absorber for oil/water separation (Figure
1b). Moreover, the absorbed oil could be remove by burning, and the oil sorption was still as high as 90% of the
original sorption capacity after 5 cycles.

References

[1] Li C, Wu Z Y, Liang H W, et al., Small, 13(2017)

[2] Meng Y, Young T M, Liu P, et al., Cellulose, 22(2015) 435-447.
[3] Yin T, Zhang X, Liu X, et al., Rsc Advances, 6(2016) 98563-98570.
[4] Zu G, Shen J, Zou L, et al., Carbon, 99 (2016) 203-211.

Figures
(a) (b)

112°

(c)

Figure 1: (a) The water contact angle of RGO/CH aerogels (b) Water stained with SudanⅠwas dropped on the surface of
RGO/CH aerogel (c) Removal of corn oil from the water surface using RGO/CH aerogels

229
Yongjin Zou
Cuili Xiang, Fen Xu, Lixian Sun*
Material Science and Engineering, Guilin University of Electronic Technology, 1# Jinji Road, Guilin, 541004
China
zouy@[Link]

Functionalized porous carbon for high performance

supercapacitors
Porous carbon-based nanomaterials such as graphene, carbon nanotubes, carbon nanosheets and carbon
nanosphere are still the first choices for fabricating the electrodes of supercapacitor because of their excellent
stability, good conductivity, and large surface area [1]. However, the capacitance of carbon-based materials is
intrinsically low, which limit their wide application. Doping carbonaceous materials with a conducting polymer or
transition metal compounds to generate pseudocapacitance is effective way to improve their electrochemical
performance [2-4]. In this study, porous carbon was functionalized with transition metal oxides, conducting
polymer and heteroatom for the purpose of supercapacitive enhancement. The electrochemical performance of
the supercapacitor was studied in detail.

References

[1] Y. Zou, Q. Wang, C. Xiang, Z. She, et al., Electrochim. Acta, 2016,188, 126-134.
[2] C. Xiang, Q. Wang, Y. Zou, et al. J. Mater. Chem. A, 2017,5, 9907-9916.
[3] Y. Zou, C. Cai, C. Xiang, et al. Electrochim.a Acta, 2018,261,537-547.
[4] C. Cai, Y. Zou, C. Xiang, et al., Appl. Surface Sci., 2018, 440, 47-54.

230

Common questions