Ordering number : EN*A1476

Thick-Film Hybrid IC

STK433-760-E 2-channel class AB audio power IC,

50W+50W
Overview
The STK433-760-E is a hybrid IC designed to be used in 50W × 50W (2-channel) class AB audio power amplifiers.

Applications
• Audio power amplifiers.

Features
• Miniature package (47.0mm × 25.6mm × 9.0mm)
• Output load impedance: RL = 6Ω to 4Ω supported
• Built-in stand-by circuit, output limiting circuit for substrate overheating, and load short-circuit protection
circuit constituted by monolithic ICs

Series Models
STK433-730-E STK433-760-E
Output 1 (10%/1kHz) 30W×2 channels 50W×2 channels
Output 2 (0.4%/20Hz to 20kHz) 15W×2 channels 35W×2 channels
Max. rated VCC (quiescent) ±30V ±50V
Max. rated VCC (6Ω) ±28V ±40V
Max. rated VCC (4Ω) ±25V ±33V
Recommended operating VCC (4Ω) ±18V ±23V
Dimensions (excluding pin height) 47.0mm×25.6mm×9.0mm

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

52709HKIM No. A1476-1/12

 STK433-760-E
Specifications
Absolute Maximum Ratings at Ta = 25°C, Tc=25°C unless otherwise specified
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage VCC max (0) Stand-by ON or When no signal (Stand-by OFF) ±50 V
VCC max (1) When signals are present, RL≥6Ω (*1) ±40 V
VCC max (2) When signals are present, RL≥4Ω (*1) ±33 V
Minimum operating supply voltage VCC min ±10 V
Stand-by pin maximum voltage VST max -0.3 to +5.5 V
Output current IO (peak) 1ch, ton=25ms 5.0 A
Thermal resistance θj-c Per power transistor 3.5
°C/W
Per package 0.88
Junction temperature Tj max Both the Tj max and Tc max conditions must be met. 150 °C
IC substrate operating temperature Tc max 125 °C
Storage temperature Tstg -30 to +125 °C

Operating Characteristics at Tc=25°C, RL=4Ω, Rg=600Ω, VG=30dB, non-inductive load RL, using constant-
voltage power supply and specification test circuit, unless otherwise specified
Conditions *2 Ratings
Parameter Symbol VCC f PO THD unit
min typ max
(V) (Hz) (W) (%)
Output power *2 PO (1) ±23 20 to 20k 0.4 33 35
PO (2) ±23 1k 0.4 40 W
PO (3) ±23 1k 10 50
Total harmonic distortion *2 THD (1) ±23 20 to 20k 0.4
5.0 VG=30dB %
THD (2) ±23 1k 0.04
Output power transistor Vsat
±23 1k 50 10 5.0 V
saturation voltage
Frequency characteristics *2 fL, fH ±23 1.0 +0 -3dB 20 to 50k Hz
Input impedance ri ±23 1k 1.0 55 kΩ
Output noise voltage *10 VNO ±28 Rg=2.2kΩ 1.0 mVrms
Quiescent current ICCO ±28 No loading 15 30 60 mA
Output neutral voltage VN ±28 -70 0 +70 mV
Pin 13 voltage when standby VST ON
±23 Standby 0.6 V
ON *5
Pin 13 voltage when standby VST OFF
±23 Operating 2.5 3.6 5.5 V
OFF *5
Pin 10 (latch operation IM ON In short-circuit
5.5 V
detection pin) voltage *7 protection mode
Substrate thermal protection TD
±23 1k RL=∞ 130 °C
*8
Overcurrent protection *8,*10 IO (peak) ±23 1k 6.0 A

No. A1476-2/12
 STK433-760-E
[Remarks]
*1: Maximum ratings are limits beyond which damage to the device may occur.
Exceeding the maximum ratings, even momentarily, may cause damage to the hybrid IC.
In SANYO Semiconductor's test processes, operation at the maximum supply voltage is checked.
(Test conditions) VCC max (2)=±33V, RL=4Ω, f=1kHz, Po=35W, 1ch Drive, ton=25ms, Tc=25°C
*2: For 1-channel operation
*3: -Pre VCC (pin 7) must be connected to the lowest stable potential to prevent the current flowing into the pin 1 due to
reverse bias, etc.
*4: Thermal design must be implemented based on the conditions under which the customer’s end products are expected
to operate on the market.
*5: Use the hybrid IC so that the voltage applied to the stand-by pin (pin 13) never exceeds the maximum rating. The
power amplifier is turned on by applying +2.5V to +5.5V to the stand-by pin (pin 13).
*6: An output limiting circuit for H-IC overheating is incorporated to protect the hybrid IC from the heat generation
exceeding the maximum rating. Thermal design must be implemented from the maximum loss Pd max and "Pd-Tc"
derating curve based on the conditions under which the customer's end products are expected to operate on the
market. When deviating from the "Pd-Tc" derating curve, the desired output is not obtained, but the prescribed
output is generated again by reducing H-IC temperature to within the recommended operating region.
*7: The load short-circuit protection is designed based on the specification test condition.
The load short-circuit protection circuit is activated when it has detected an overcurrent in the output transistors. So
if any deviation from the "Pd-Tc" derating curve occurs, the protection circuit is activated and the circuit shuts down
in order to protect the output transistors. When the load short-circuit protection circuit has been activated and the
circuit shuts down, approximately +5.5V of voltage will be placed at the MONITOR pin (pin 10) (normally 0V).
The protection circuit operation is released by establishing the stand-by mode (pin 13: 0V).
*8: The substrate temperature protection rating is the design guarantee value using the specification test circuit of
SANYO Semiconductor.
The output limiting circuit for H-IC overheating (*6) and the load short-circuit protection circuit (*7) are the only
protection functions incorporated.
The thermal design and overcurrent protection level must be verified based on the conditions under which the
customer's end products are expected to operate on the market.
*9: A thermoplastic adhesive resin is used to secure the case and aluminum substrate. For this reason, the hybrid IC
must be fixed to the heat sink before soldering and mounted. The heat sink must be installed or removed at room
temperature.
*10: Use the designated transformer power supply circuit shown in the figure below for the measurement of allowable
load shorted time and output noise voltage level.
*11: Weight of independent hybrid IC: 12.2g
Outer box dimensions: 452(D) × 325(W) × 192(H) mm

DBA40C 10000μF
+VCC
+
Designated transformer power supply 500Ω

(MG-200 equivalent) +
500Ω
-VCC
10000μF

No. A1476-3/12
 STK433-760-E

Pc - Tc Pd - Tc
120 160
2-ch drive
(same output rating)
Power Transistor Dissipation, Pc - W

140
100

Power Dissipation, Pd - W
120

80
100

60 80

60
40

40

20
20

0 0
0 50 100 150 0 50 100 150
Operating Substrate Temperature, Tc - °C ITF02668 Operating Substrate Temperature, Tc - °C ITF02669

Package Dimensions
unit:mm (typ)

47.0

9.0
41.2 (R1.8)
25.6
5.0

12.8

17.6

1 15
3.6 0.4
4.0

2.0 0.5 2.9

(6.6) 14 2.0=28.0 5.5

No. A1476-4/12
 STK433-760-E
Internal Equivalent Circuit

+VCC 3

+Pre VCC 8

Pre Driver Pre Driver

CH1 CH2

IN ch1 11 15 IN ch2
+ +

NF ch1 12 14 NF ch2
- -

Stand-by Circuit

-Pre VCC 1

- VCC 2

SUB
ch1- 5 4 6 7 ch2- 9 10 13
ch1+ ch2+ GND Monitor St-By

Application Circuit Example

STK433-760-E
GND/
-Pre -VCC +VCC Ch1+ Ch1- Ch2+ Ch2- +Pre SUB Monitor IN/1 NF/1 St-by NF/2 IN/2

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
R3
Stand-by Control
R02 (C5)
Detection Terminal
R01 (R4) C27
+VCC R27 R28 C28
C04
C01 C03
GND
R16
C02
R15
-VCC
C14 R24
R23
C13 C23 R21
L12 Ch1 IN
R11 R12 C25 C26
L11 R25 C21
R13 R14
GND
C11 C12
R26 C22
Ch2 IN
GND Ch1 OUT Ch2 OUT GND C24 R22

No. A1476-5/12
 STK433-760-E
Recommended Values for Application Parts (for the test circuit)
Recommen Larger than Smaller than
Symbol Description
ded Value Recommended Value Recommended Value
R01, R02 100Ω Ripple filtering resistors (Fusible resistors are desirable) Decreased pass- Increased pass-
(Used with C03, C04 to form a ripple filter.) through current at high through current at high
frequencies. frequencies.
R03 - Use a limiting resistor according to the stand-by control voltage in order to control the stand-by pin voltage VST within the
rating.
(R04) about 10kΩ Pull down resistance (at detection terminal use). - (min) 5.1kΩ
R11, 12 4.7Ω Noise-absorbing resistors - -
R13, 14 4.7Ω/1W Oscillation prevention - -
R15, 16 56kΩ Used with R23 and R24 to determine the voltage gain VG. VN offset
(Ensure R15=R25, R16=R26 when changing.)
R21, 22 1kΩ Input filtering resistor - -
R23, 24 1.8kΩ Used with R15 and R16 to determine the voltage gain VG. (VG Likely to oscillate None
should desirably be determined by the R23 and R24 value.) (VG<30dB) (VG≤42dB)
R25, 26 56kΩ Input bias resistors (Virtually determine the input impedance.) - -
R27, 28 560Ω Oscillation prevention Likely to oscillate
C01, 02 100μF Oscillation prevention
• Insert the capacitors as close to the IC as possible to decrease
- -
the power impedance for reliable IC operation (use of
electrolytic capacitors are desirable).
C03, C04 100μF Decoupling capacitors. Increase in ripple components that pass into the
• Eliminate ripple components that pass into the input side from input side from the power line.
the power line. (Used with R01, R02 to form a filter.)
(C05) About 0.1μF A constant is adjusted when detection voltage appears at the time of latch rise (at detection terminal use).
C11, 12 0.1μF Oscillation prevention (Mylar capacitors are recommended.) Likely to oscillate
C13, 14 15pF Oscillation prevention Likely to oscillate
C21, 22 470pF Input filter capacitor
(Used with R21 and R22 to form a filter that suppresses high- - -
frequency noises.)
C23, 24 2.2μF Input coupling capacitor (block DC current) - -
C25, 26 10μF NF capacitor Increase in low- Decrease in low-
(Changes the low cutoff frequency; fL=1/ (2π • C25 • R23) frequency voltage gain, frequency voltage gain
with higher pop noise
at power-on.
C27, 28 120pF Oscillation prevention Likely to oscillate
L11, 12 1μH Oscillation prevention None Likely to oscillate

No. A1476-6/12
 STK433-760-E
Sample PCB Trace Pattern

C04

Cut pattern of #10pin R04

C05

* Additional parts are indicated by CIRCUIT Location No.

No. A1476-7/12
 STK433-760-E
STK433-760-E TEST Board PARTS LIST
STK403-000sr/100sr/200sr PCB
PCB Location No. CIRCUIT Location No. PARTS RATING STK433-760-E
R01 R01 ERG1SJ101 100Ω,1W
R02,R03 R21, R22 RN16S102FK 1kΩ, 1/6W
R05, R06, R08, R09 R15, R16, R25, R26 RN16S563FK 56kΩ, 1/6W
R11, R12 R23, R24 RN16S182FK 1.8kΩ, 1/6W
R14, R15 R11, R12 RN14S4R7FK 4.7Ω, 1/4W
R17, R18 R13, R14 ERX1SJ4R7 4.7Ω, 1W
R20, R21 - - - short
R34, R35 R27, R28 RN16S561FK 560Ω, 1/6W
- R04 RN16S103FK 10kΩ, 1/6W
- C05 ECQ-V1H104JZ 0.1μF, 50V
C01, C02, C03 C01, C02, C03, C04 100MV100HC 100μF, 100V
C05, C06 C23, C24 50MV2R2HC 2.2μF, 50V (*)
C07, C08 C21, C22 DD104-63B471K50 470pF, 50V
C10, C11 C13, C14 DD104-63CJ150C50 15pF, 50V
C13, C14 C25, C26 10MV10HC 10μF, 10V (*)
C16, C17 C11, C12 ECQ-V1H104JZ 0.1μF, 50V
C19, C20 C27, C28 DD104-63B121K50 120pF, 50V
L01, L02 L11, L12 - 1μH
Stand-By Tr1 2SC2274 (Reference) VCE≥50V, IC≥10mA
Control Circuit D1 - -
R03 RN16S133FK 13kΩ, 1/6W
R31 RN16S333FK 33kΩ, 1/6W
R32 - -
R33 RN16S202FK 2kΩ, 1/6W
C32 10MV33HC 33μF, 10V
J1, J2, J3, J4, J5, J6,
- - - Jumper
J8, J9
JS6 - - - Jumper
JS1 R02 ERG1SJ101 100Ω, 1W -
• (*) Capacitor mark “A” side is “-” (negative).
• R04, C04 and C05 does not have a location number on the PCB so the component must be mounted on the reverse
side of the board.

No. A1476-8/12
 STK433-760-E
Pin Assignments
[STK433-730-E/-760-E Pin Layout]
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
(Size) 47.0mm×25.6mm×9.0mm 2ch classAB/2.00mm
STK433-730-E 30W×2ch/JEITA - - + O O O O + I N S N I
STK433-760-E 50W×2ch/JEITA P V V U U U U P S M N F T F N
R C C T T T T R U O / / A / /
E C C / / / / E B N C C N C C
C C C C / I H H D H H
H H H H G T 1 1 | 2 2
1 1 2 2 N O B
+ - + - D R Y

Evaluation Board Characteristics

THD - PO Pd - PO
100 100
7 VCC=±23V VCC=±23V
5

Total power dissipation on PCB, Pd - W

3 RL=4Ω 90 RL=4Ω
Total Harmonic Distortion, THD - %

2
2ch Drive 2ch Drive
10 80
7 VG=30dB f=1kHz
5
3 Rg=600Ω 70 VG=30dB
2 Tc=25°C Rg=600Ω
1.0 60 Tc=25°C
7
5 f=20
3 kHz 50
2
0.1 40
7
5 f=1
3 kHz 30
2
0.01 20
7
5
3 10
2
0.001 0
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Output Power, PO/ch - W ITF02670
Output Power, PO/ch - W ITF02671

PO - VCC PO - f
100 80
RL=4Ω
90 2ch Drive
70
VG=30dB
80
Rg=600Ω
Output Power, PO/ch - W
Output Power, PO/ch - W

60
70 Tc=25°C THD=10%
z)
60 kH 50
1 z)
( f= 1 kH THD=0.4%
50 0% (f= 40
=1 .4%
H D 0 z)
40 T
H D= 20kH 30
VCC=±23V
T (f =
30 .4% RL=4Ω
D =0 20
20 TH 2ch Drive
VG=30dB
10
10 Rg=600Ω
Tc=25°C
0 0
10 15 20 25 30 35 10 2 3 5 7 100 2 3 5 7 1k 2 3 5 7 10k 2 3 5 7100k
Supply Voltage, VCC - ±V ITF02672 Frequency, f - Hz ITF02673

No. A1476-9/12
 STK433-760-E
[Thermal Design Example for STK433-760-E (RL = 4Ω)]
The thermal resistance, θc-a, of the heat sink for total power dissipation, Pd, within the hybrid IC is determined as
follows.
Condition 1: The hybrid IC substrate temperature, Tc, must not exceed 125°C.
Pd × θc-a + Ta < 125°C ................................................................................................. (1)
Ta: Guaranteed ambient temperature for the end product
Condition 2: The junction temperature, Tj, of each power transistor must not exceed 150°C.
Pd × θc-a + Pd/N × θj-c + Ta < 150°C .......................................................................... (2)
N: Number of power transistors
θj-c: Thermal resistance per power transistor
However, the power dissipation, Pd, for the power transistors shall be allocated equally among the number of power
transistors.
The following inequalities result from solving equations (1) and (2) for θc-a.
θc-a < (125 − Ta)/Pd ...................................................................................................... (1)'
θc-a < (150 − Ta)/Pd − θj-c/N ........................................................................................ (2)'
Values that satisfy these two inequalities at the same time represent the required heat sink thermal resistance.
When the following specifications have been stipulated, the required heat sink thermal resistance can be determined
from formulas (1)' and (2)' .
• Supply voltage VCC
• Load resistance RL
• Guaranteed ambient temperature Ta

[Example]
When the IC supply voltage, VCC, is ±23V and RL is 4Ω, the total power dissipation, Pd, within the hybrid IC, will
be a maximum of 52W at 1kHz for a continuous sine wave signal according to the Pd-PO characteristics.
For the music signals normally handled by audio amplifiers, a value of 1/8PO max is generally used for Pd as an
estimate of the power dissipation based on the type of continuous signal. (Note that the factor used may differ
depending on the safety standard used.)

This is:
Pd = 38.0W (when 1/8PO max. = 6.25W).

The number of power transistors in audio amplifier block of these hybrid ICs, N, is 4, and the thermal resistance per
transistor, θj-c, is 3.5°C/W. Therefore, the required heat sink thermal resistance for a guranteed ambient temperature,
Ta, of 50°C will be as follows.
From formula (1)' θc-a < (125 − 50)/38.0
< 1.92
From formula (2)' θc-a < (150 − 50)38.0 − 3.5/4
< 1.75
Therefore, the value of 1.75°C/W, which satisfies both of these formulae, is the required thermal resistance of the heat
sink.
Note that this thermal design example assumes the use of a constant-voltage power supply, and is therefore not a
verified design for any particular user’s end product.

No. A1476-10/12
 STK433-760-E
STK433-760-E Stand-by Control & Mute Control Application
STK433-760-E
VST
Ch1 Ch1 Ch2 Ch2 SUB/ Ch1 Ch1 Ch2 Ch2
-PRE -VCC +VCC OUT OUT OUT OUT +PRE GND MONITOR IN NF ST-BY NF IN

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
TR1
R31 Stand-by Control(ex)
H: Operation Mode(+5V)
R03 L: Stand-by Mode(0V)
C32 R33

Ch2 IN

10kΩ
GND

10kΩ
Ch1 IN
10kΩ
(0.1μF)
MONITOR Mute Control
+VCC H: Single Mute
(10kΩ) 2.2kΩ
L: Normal

Ch2 OUT
GND +5V
GND Stand-by
Control
GND
Mute +5V
-VCC
Control
Ch1 OUT

MUTE

ST-BY PLAY MUTE ST-BY

[The example of use STK433-*00series Stand-by control circuit]

Features
• By using the recommended stand-by control application, the pop noise level when the power is turned on/off can be
significantly reduced.
• By adjusting the limiting resistance (*2) in accordance with the voltages of the microcontroller and other components
used, it is possible to perform stand-by control, facilitating the finished product design effort.
(ex) STK433-*00series test circuit. When impressed by Stand-by control control [+5V].

Stand-by control circuit part

H: Operation mode (+5V)
VST L: Stand-by mode (0V)
33kΩ
1kΩ (*1)
33μF (min) 2kΩ
ΔVBE (*3) (*4)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
ex) VST=(Stand-by Control-VBE*2)× (*2)/((*1)+(*2))+VBE
-VCC +VCC Ch2 Ch2
-PRE Ch1 Ch1 Ch2 Ch2 +PRE SUB/ MONITOR Ch1 Ch1 ST-BY =(5V-0.6V*2)×4.3kΩ/(4.3kΩ+1kΩ)+0.6V
NF IN
OUT OUT OUT OUT GND IN NF ≈3.68(V)
4.3kΩ (*2)

ΔVBE
Stand-by Circuit

STK433-*00series in Pre Driver IC

Operation Explanation
1) About VST (#13pin Stand-by Threshold)
<1> Operation Mode
When pin 13 reference voltage VST is equal to or greater than 2.5V, the stand-by circuit is set off, and the
amplifier is set to the operation mode.
<2> Stand-by Mode
When pin 13 reference voltage VST is equal to or less than 0.6V, the stand-by circuit is set off, and the amplifier is
set to the stand-by mode.
(*3) The pop noise that occurs when the power is turned ON is reduced by providing a time constant using a capacitor
during operation.
(*4) The pop noise level is reduced by discharging the capacitor with a resistor in the stand-by mode.

No. A1476-11/12
 STK433-760-E

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.

This catalog provides information as of May, 2009. Specifications and information herein are subject
to change without notice.

PS No. A1476-12/12