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TO-92 Transistor Specifications: C945

Jiangsu Changjiang Electronics Technology Co., Ltd produces TO-92 plastic-encapsulated NPN transistors. The transistor has a power dissipation of 0.4W at 25°C, operates from -55°C to +150°C, and has a collector-base breakdown voltage of 60V minimum. Key electrical characteristics include a DC current gain of 70-700 and a collector-emitter saturation voltage of 0.3V maximum.

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13 views1 page

TO-92 Transistor Specifications: C945

Jiangsu Changjiang Electronics Technology Co., Ltd produces TO-92 plastic-encapsulated NPN transistors. The transistor has a power dissipation of 0.4W at 25°C, operates from -55°C to +150°C, and has a collector-base breakdown voltage of 60V minimum. Key electrical characteristics include a DC current gain of 70-700 and a collector-emitter saturation voltage of 0.3V maximum.

Uploaded by

minrey
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-92 Plastic-Encapsulate Transistors

C945 TRANSISTOR (NPN)


TO-92
FEATURES

Power dissipation
1. EMITTER
PCM: 0.4 W (Tamb=25℃)
Collector current 2. COLLECTOR

ICM: 0.15 A
3. BASE
Collector-base voltage
V (BR) CBO: 60 V
1 2 3
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=1mA, IE=0 60 V

Collector-emitter breakdown
V(BR)CEO IC=100uA , IB=0 50 V
voltage

Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V

Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA

Collector cut-off current ICEO VCE=45V 0.1 µA

Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA

hFE(1) VCE=6V, IC=1mA 70 700


DC current gain
hFE(2) VCE=6V, IC=0.1mA 40

Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V

Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V

Transition frequency fT VCE=6V, IC=10mA, f =30 MHz 200 MHz

Collector output capacitance Cob VCB=10V, IE=0, f=1MHZ 3.0 pF

VCE=6V, IC=0.1mA
Noise figure NF 4 10 dB
Rg=10kΩ, f=1kMHZ

CLASSIFICATION OF hFE(1)
Rank O Y GR BL

Range 70-140 120-240 200-400 350-700

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