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Metal-Semiconductor Junctions Explained

Metal-semiconductor junctions can be either ohmic (non-rectifying) or Schottky (rectifying) contacts. For Schottky contacts, there is a threshold voltage that must be exceeded for current to flow. The type of majority carrier in the semiconductor (electrons for n-type or holes for p-type) determines whether the metal work function is greater or less than the semiconductor work function, resulting in either a Schottky or ohmic contact. Applying a forward bias reduces the depletion width, allowing increased current flow in the direction of lowest energy.

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110 views10 pages

Metal-Semiconductor Junctions Explained

Metal-semiconductor junctions can be either ohmic (non-rectifying) or Schottky (rectifying) contacts. For Schottky contacts, there is a threshold voltage that must be exceeded for current to flow. The type of majority carrier in the semiconductor (electrons for n-type or holes for p-type) determines whether the metal work function is greater or less than the semiconductor work function, resulting in either a Schottky or ohmic contact. Applying a forward bias reduces the depletion width, allowing increased current flow in the direction of lowest energy.

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MaharshiGohel
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Topic 6: Metal-

Semiconductor Junctions
Band-Bending at Interface
Metal Semiconductor
For Metal: EA
Electron Affinity and Work Wf
Function are equivalent. Wf

For Semiconductor:
Work Function = Evac - EF
Electron Affinity = Evac - Ec

Work Function
Types of Metal-Semiconductor
Contacts
Ohmic Contact (non-rectifying) Schottky Contact (rectifying)

Rectifying junction implies that current can


only flow in one direction across the MS
junction. Non-rectifying means the current is
allowed in both directions.

For Schottky Contacts, there is a threshold


voltage in order to get current flow.

The majority carrier of the semiconductor matters… Look at examples on the next page
Types of Metal-Semiconductor
Contacts

Metal N Metal P

• N-type implies electrons are the majority • P-type implies holes are the majority
• Conduction band determines MS junction behavior • Valence band determines MS junction
behavior

N-type Schottky P-type Schottky N-type Ohmic P-type Ohmic

Ec
E
EvF

φM > φS φM < φS φM < φS φM > φ S


Debye Length

The Depletion Width in a metal is negligible, so the equation shows


the width of the potential barrier in the semiconductor
Types of Metal-Semiconductor
Contacts
Ohmic Tunneling Contact
(non-rectifying)
Metal P++ P

Metal N-- N

|Efield|
Tunneling is allowed

Very Thin
Applied Voltage – MS Junction
As a negative voltage is applied to the metal the Fermi energy of the
metal is raised, as a positive voltage is applied to the metal the Fermi
energy of the metal is lowered.
+ - - +
Applied Voltage
Forward and Reverse Bias
Forward Bias – implies that the depletion wide is getting smaller or
disappears allowing for an increase in current flow. The current flows in
the direction of lowest energy.
Reverse Bias – implies that the depletion wide is getting which prohibits
current flow.
To Determine FB or RB, look at the charge of the depletion
region, FB will always offset the SCR polarity across the junction.
These are all forward bias
- + +
N P + Metal N -
+ -
M N
- +
- +
+ N -
M P
Metal Oxide Semiconductor
Capacitor – 2DEG

2DEG

2DEG = 2-Dimensional Electron Gas

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