98 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 42, NO.

1, FEBRUARY 1995

IGBT SPICE Model

Franc MihaliE, Student Member, IEEE, Karel Jezernik, Member, IEEE, Klaus Krischan,
and Manfred Rentmeister

Abstractauring the last few years, great progress in the devel- Collector
opment of new power semiconductor devices has heen made. The
new generationof power semiconductorsis capable of conducting
more current and blocking higher voltage. The IGBT (Insulated Gated
Gate Bipolar Transistor) is an outgrowth of power MOSFET
technology. More like a MOSFET than a bipolar transistor in
structure, the IGBT has some of the electrical characteristics
of both. Like a MOSFET, the gate of IGBT is isolated, and
drive power is very low. The on-state conduction voltage of an
IGBT is similar to that of a bipolar transistor. However, SPICE
users are constantly faced with the inability to analyze circuits
that contain devices that are not in the SPICE library of the
semiconductor models. With our own computer program, the
complete macromodel of the IGBT for SPICE simulator has been (b)
computed. In this paper, the complete IGBT SPICE macromodel
Fig. 1. Equivalent circuit and extended model of the IGBT.
will be described and verified with the experimental results.

I. INTRODUCTION model and the nonlinear input capacitance, which is modeled

by four segment piece-wise linear function. First, the transient

T HE higher operating frequency and simpler drive re-

quirement provide rising output Power for modem Power
electronics equipment [I], [21. An investigation and analytical
analysis of h e IGBT with ohmic load has been done to
obtain the adequate switching times as in the data sheets.
Second, the simulation and measurement of the single half-
modeling have been done by Hefner et al. [31-[51, but the bridge configuration, suitable for PWM-application with a
IGBT library models are not easily attainable yet; so we have resistive-inductive load, have kendone.
decided to develop our own macromodel as it has already
been reported in [61, [71.
11. THE DC MODELOF THE IGBT
The IGBT is a hybrid power device that combines the
advantages of a MOSFET (fast switching and low drive power) The output characteristics of the IGBT and BJT differ
and BJT (low conduction losses). In this paper, the complete only in the controlling parameters: the first one is voltage
SPICE model of the IGBT will be described and verified with controlled and the second one is current controlled. The
the data sheets and experimental results. The resistive part transfer characteristic of the IGBT is identical to that of the
of the model (also called dc model) is derived by using the power MOSFET. This curve is almost linear over the wide
two nonlinear voltage controlled generators between the input range of the output current, becoming nonlinear only at low
and the output transistors. The dynamic part of the model is collector current where the gate-emitter voltage is approaching
realized by the nonlinear input capacitance which is added the threshold.
to the resistive circuit of the model. The simulated output and We can get all needed parameters for SPICE simulator
transfer characteristic will be compared with the characteristics from measured characteristics and other manufacturer’s data
from the data sheets. The simulation results of the transient in the catalogue. Most of the parameters are obtained from
analysis obtained by using the dynamic model of the IGBT the output characteristics. The first equivalent IGBT circuit
should be compared to the switching characteristics obtained model is shown in Fig. l(a). The equivalent IGBT model in
by measurements. this figure represents the IGBT as a Darlington circuit with a
In next chapter, first the dc macromodel will be described BJT transistor as the output transistor and a MOSFET as the
and the obtained static characteristics will be presented. After driver device. From the output characteristics of the IGBT it
the satisfactory static characteristics are obtained, the dynamic can be seen that the output current depends only on the driving
macromodel is then described as a combination of the dc voltage. Based on these assumptions, all equations which
describe the MOSFET in the cutoff, linear and saturation
Manuscript received September 17, 1993; revised February 25, 1994 and regions can be implemented in our model of the IGBT [8].
March 21, 1994.
F. Mihalit and K. Jezemik are with the Faculty of Technical Sciences, Since the output characteristics of the IGBT are not exactly
Department of Electrical Engineering, Computer Science and Technology, the same as the output characteristics of the MOSFET, they
University of Maribor, 62000 Maribor, Slovenia. have to be modified. The three additional voltage and current
K. Krischan and M. Rentmeister are with the Institute for Electromagnetic
Energy Conversion, Graz University of Technology, 8010 Graz, Austria. controlled generators between the MOSFET and BJT are
IEEE Log Number 9405105. shown in Fig. l(b).
0278-0046/95$04.00 0 1995 IEEE
MIHALIC et al.:IGBT SPICE MODEL 99

The programming capability of SPICE is made possible by The value of the saturation voltage VCE(,at)is obtained from
the use of dependent controlled sources where the equations the output characteristics. It is determined by the tangent to
describing the controlled sources are implemented using the appropriate curve in the linear region at a fixed driving
the user-defined model subroutine. There are four types of voltage VGE. At the point where the tangent is separated from
controlled sources in the SPICE simulator: Voltage-Controlled this curve, the saturation voltage is read and used in (5). By
Current Source (VCCS), Voltage-Controlled Voltage Source using this correction function, the output voltage of the IGBT
(VCVS), Current-Controlled Current Source (CCCS), and is transformed into the output voltage of the MOSFET with
Current-Controlled Voltage Source (CCVS) [9]. several different input voltages as the parameter. In our case,
In implementing these controlled sources into the user- this has been realized by a two-dimensional nonlinear voltage
defined model subroutine, the user must follow a particular controlled voltage source:
format in order for the data to pass properly through the
SPICE input file (which provides a list of voltages or currents
and a list of constant model parameters) and the user-defined The correction function is approximated with an appropriate
model subroutine (which computes the actual output voltage or polynomial. The degree of this polynomial depends on the
current values based on the input lists). SPICE requires that the number of the accounted points and required accuracy. By
inputs of the controlling variables be of only one source type: increasing the degree of the polynomial, better accuracy can
either all voltage or all current. Therefore, in the cases where be achieved but it also means a slower simulation. The
the output is dependent upon both current and voltage type coefficients of the polynomial generator F1(VGE)are obtained
variables, the controlling variables of one of the types must from polynomial regression analysis like:
be transformed into the other type (that is why the current
controlled voltage source H D is used in the extended SPICE
macromodel of the IGBT in Fig. I@)).
The above equation is two-dimensional function which is in
SPICE format realized as [lo]:
A. Output Characteristics of the ICBT in the Cutoff Region
In the cutoff region the output current is zero. The typical E D ( a ) ( b )POLY (2)(4(4 ( e ) ( f )
value of the output voltage is between 0.7 V and 1.0 V and + O,0,h~,O,hl,O,O,h~,0,O,O,h3l0,0,0,0,h4~(8)
it is represented by the diode D connected between the drain
of the MOSFET and the two-dimensional nonlinear voltage C. Output Characteristics of the IGBT in the Saturation Region
controlled voltage generator E D . This diode prevents the
For the output BJT in the IGBT, which is in the common
collector current of the BJT to flow if the reverse voltage
base orientation, the input characteristic can be reached by
is applied across the output of the IGBT.
the Ebers-Moll (in SPICE Gummel Poon) model [ 1 I]. From
Fig. ](a) it can be also seen that the base current of the BJT
B. Output Characteristics of the IGBT in the Linear Region flows through the drain of the MOSFET:
The linear region of the IGBT and MOSFET can be assumed
to be the same. Only the transition from the linear into the I D = -IB. (9)
saturation region must be corrected. When the MOSFET is Currents and voltages are related through the basic circuit laws,
saturated the following equation is valid: valid for both n-p-n and p-n-p BJT’s. From Kirchoff s current
and voltage law:

The same condition for the output transistor must be satisfied: + +

I E I B IC 0 (10)

1”cE(sat) = V D + vDS(sat). (2)

+ +
VEB VBC VCE = 0 (11)

From (1) and (2) the saturation voltage of the output transistor above equations are valid. The terminal currents can now be
can be derived as: expressed in terms of I F and 1, as follows:

VCE(sat) = VGS - vGS(tti) + \’D. (3)

IC = CYFIF- I R
I E = - I F + (YRIR
Equation (3) is valid when the appropriate correction function
Fl( VGE)(dependent on gate-emitter voltage) is introduced and +
IB = (1- ~ F ) I F (1 - Q R ) ~ R (12)
so the saturation voltages of the MOSFET have been made where CYF and C Y Rare the large-signal forward and reverse cur-
equal to the corresponding saturation voltages of the IGBT: rent gains of a common-base BJT respectively. I F ( I R ) is the
current that would flow across the base-emitter (base-collector)
v C E ( ~ a + ) F l ( v k E=
) vGS - VGS(th) + vD. (4)
junction for a given VBE (VBC)if the collector (emitter) region
From the above equation the correction function is then were replaced by an ohmic contact without disturbing the base.
calculated as: Considering the BJT as the current controlled device, the base
current can be expressed as:
VCE(sat) Is (1 - C Y F ) I F . (13)
100 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 42, NO. 1. FEBRUARY 1995

Finally, the following familiar relation must be considered: Equation (24) is the two-dimensional voltage controlled cur-
rent source which is realized in SPICE as [lo]:
PF
a F = - (14)
+
1 PF G B ( a ) ( b )POLY ( 2 ) ( 4 ( 4 ( e ) ( f )
where is the large-signal forward current gain of a + O, 0, Po, O, 0, 0, P23 0, 0, 0,p33 o,o, o,o,P4 ' ' ' (25)
common-emitter BJT. From (1 3) and (14) we can get: To eliminate the influence of the base current on the collector
current, the maximum possible parameter BF is chosen (for
I E = (1 + P F ) I B . (I5) example BF = 100). This simplifies the equation for the
In SPICE the above equation can be rewritten as: emitter current (16) since it becomes equal to the collector
current.
I E = (1 + B F ) I B (16)
D. Temperature Effects
where BF is the forward current gain of the output BJT. Now The temperature behavior of the IGBT can be determined
the drain current of the MOSFET in the saturation region can
from the transfer characteristic in the data sheets. In the
be described by the following equation: saturation region the drain current of the MOSFET versus
temperature is given as:

The collector current of the IGBT can be written from (9), I D ( T ) = ICP(I,'GS - VGS(th))
2
(g)-1.5. (26)
(16), and (17) as:
The BJT has also many parameters which depend on tem-
k perature. As the BJT is the current driven device, only the
+
IC = (1 B F ) l ( V G S - v G S ( t l ~ ) ) ~ .
2
(18) influences on the current gain BF are observed:
By using the appropriate correction function F2( VGE), the
operation of the MOSFET and the IGBT in the saturation
region has been adjusted:
BF(T) = B F
( - (27)

where T is the observed temperature, To is the nominal tem-

k perature and XTB is the forward and reverse beta temperature
= (' BF)f(VGs - VGS(th))zFz(VGE)' (19) coefficient. XTB is determined from the collector current IC
at the two different temperatures with VGE = const. (the
From the above equation, the correction function can be
temperature is given in K ) :
calculated as:

For better results more points are used and then the average
where is the output current of the IGBT at the sat- value for the temperature coefficient is chosen. The nominal
uration voltage, VGE is the corresponding driving voltage of temperature in SPICE simulator is changed into the usual
the IGBT and BF is the forward current gain of the output temperature from the data sheet, 25°C.
transistor. Values of the collector current and driving voltage
can be obtained from the output characteristics. The base E. Validation of the DC Model
current of the output transistor in the saturation region is now: In order to examine the effectiveness of the IGBT macro-
model, simulated tests were performed for the Siemens IGBT
half bridge module BSM 25 GB 100 D (1000 V, 2x25 A) [ 121.
In SPICE simulator, the inputs of the controlling variables The test conditions were the same as in the data sheets. The test
have to be of only one source type. The drain current of the circuit used to simulate the output and transfer characteristic
MOSFET is therefore converted with the help of a current of the IGBT is shown in Fig. 2.
controlled voltage generator into the driving voltage Vd: The simulated and measured output and transfer character-
istics are shown in Fig. 3 where the degree of all polynomial
vd = H D = h l I D ; h l = 1 R. (22) n = 10 was chosen. The simulated results (small brackets) of
the dc macromodel are nearly identical to the results in the
The output transistor is now driven by a two-dimensional data sheets.
nonlinear voltage controlled current source:
111. THEDYNAMIC
MODELOF THE IGBT
GB = V d F2 ( VGE (23) After the satisfactory static characteristics were obtained,
The correction function in the above equation is approximated we could proceed with the dynamic part of the IGBT. In this
by the polynomial: section the dynamic model will be described as a combination
of the dc model and the nonlinear input capacitance C,
I B = &(PO + pi VGE + p2VgE + . . . + pnVE.-,). (24) (Fig. 4(a)).
 ~

MIHALICet U!.: IGBT SPICE M O D ~ L 101

L
- L
- -
Fig. 2. Simulated test circuit for validation of the dc model.

T 30
(b)
Fig. 4. Dynamic SPICE model and equivalent circuit of the IGBT.

Cid is the input capacitance for td(,,),

Ci, is the input capacitance for t,,
20 Cisis the input capacitance for t d ( , f f ) , and
Cif is the input capacitance for t f .
The input capacitance Ci, for appropriate switching time
10
t, can be calculated from the equivalent dynamic circuit in
Fig. 4(b), where the following condition must be fulfilled:
0

The input capacitance for each switching time with corre-

sponding initial conditions can be calculated from equivalent
dynamic circuit in Fig. 4(b) as already has been reported in [6]:

T 30

where:
tz is the particular switching time,
VGE(CO) is the driving signal VGGPor VGGN,
VGE(O) is the gate-emitter voltage at the
beginning of the switching time, and
10
vGE(tz) is the gate-emitter voltage at the
appropriate switching time.

-
From the dynamic behavior of the IGBT, it can be seen that
0
n 10 IVl 20 the next condition must also be fulfilled:
'CE

(b)
Fig. 3. Output and transfer characteristics of the IGBT.

Since such an input capacitance with very sharp transitions

For the dynamic SPICE model of the IGBT: between each switching state is not easy to realize in SPICE
the output capacitance is chosen from data sheets (CO= simulator because of convergence problems (dotted line in
const.), Fig. 5(a)), the final slope of transitions in Ci,, where V& is
the reverse capacitance is negligibly small, and the gate-emitter voltage at 10% Icmax, has been chosen (solid
the nonlinear input capacitance C, = f(V&, VCE) has line in Fig. 5(a)). Three operating regions can be established
been modeled with regard to each switching time of the for the driving MOSFET:
IGBT.
The nonlinear input capacitance Ci = f(Ci,) is modeled by a < 0, Cuttoff Region
four segment piece-wise linear function. Each segment of Ci, > VDS, Linear Region (32)
corresponds to the particular switching time of the IGBT: < V&, Saturation Region.
102 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 42, NO. 1, FEBRUARY 1995

.............................................................

Fig. 7. The complete SPICE macromodel of the IGBT.

(Fig. 5(a)) the switching state of the IGBT must be detected

(b)
(turn-on and turn-off process). This can be done by detecting
Fig. 5. Nonlinear input capacitance and current characteristics.
the direction of the input current IG in Fig. 6(a). The complete
SPICE model of the IGBT (dc and dynamic) is shown in Fig. 7
where:
GB = GB(VL, Vhs) HR = H R ( G ,It,)
ED = ED(Vks, Kc) FCl = FCl(1h)
H D = hl1d;hl = 1 F c ~ = Fcz(Ih)
F c ~ p= F c ~ p ( lIn) ~ ~ , HG = h421g;h2 = 100
EGS = elVg,;el = 1 G D ~ = glVds;gl = 1
ED^ = e 2 V d S ; e 2 = 1 F1 = f l I t , ; f l = 1.
FCl and F c ~are the current controlled current sources
for determining the turn-on and turn-off process with the
following characteristics:

turn-on
FCl = ;{ turn-off (35)

FC2 = { ( I rIf,I s ) ,
- turn-on
turn-off. (36)

(b) The above equation are in SPICE modelled as:

Fig. 6. Synthesis of the current-controlled input capacitance and nonlinear
input resistive circuit L%'.
FCl(u)(b) POLY(1) VH IR (IF-IR) (37)

and
A. Synthesis of the Nonlinear Input Capacitance Ci,
The synthesis of the nonlinear input capacitance is based on FC2(c)(d) POLY(1) VH (IR-IS) (IF-IR). (38)
ascertaining the input current by using the nonlinear circuit N
as shown in Fig. 6(a). The turn-on and turn-off of the IGBT is established by the zero
The equivalent current characteristic can be projected voltage source V H ~and current controlled voltage source HG.
(Fig. 5(b)), instead of the capacitance characteristic in the The gain of the source HG is set to 100 because of the low
Fig. 5(a). The slope of this characteristic is determined in the input current. The direction of the current I,, is determined by
resistive circuit by two resistances as: VCAP. The voltage controlled current source G D is~ used in
the resistance H R which is proportional to the VDS. All diodes
used in the resistive circuit of the IGBT are ideal with default
values from SPICE simulator (N = 0.05).
VDS The correction functions F1 and F2 are approximated by
and Rt, = -. (34) the appropriate polynomial and good results can be achieved
I,
in the regions where the data sheet characteristics are given.
The input current characteristic can be decomposed into two The convergence problems for the negative driving voltage
parts, as shown in Fig. 5(b). Such an input current charac- are solved by the D I N and RIN circuit in Fig. 7, where
teristic can be realized by the resistive circuit, as shown in the resistance is high enough (100 MSZ) and the diode is
Fig. 6(b). Because of the hysteresis in the input capacitance ideal. Diode D R prevents the negative voltage of the voltage
M I H A L I ~et a/.: IGBT SPICE MODEL 103

16 480
[AI [VI
SW. times Spice Data Sh. Error 12 360
.. td(on) 76 ns 60 ns +26 %
8 240
t, 240 ns 250 ns -4 %
to, = td(orl) + t , 316 ns 310 ns +1.9 % 4 120

. td(off) 244 ns 200 ns +22 %

3 0

. tf 288 ns 300 ns -4 %
t o f f = td(off) +tf 532 ns 500 ns +6.4 % ~'

k
TABLE I1 12
DIODEMODELPARAMETERS AND THEIRRELATIONS
TO DATASHEETS [AI
9
11 IBV = 1UA I TT = 1.44*t,., II
6

converter E D . The resistors R x ~ , ~in, the

J dynamic circuit has
been used to assure minimal conduction of the current sources.
Fig. 8. Simulated turn-on and turn-off waveforms of the IGBT SPICE
The complete IGBT SPICE macromodel was built by the model.
synthesis of the resistive network and the four segment piece-
wise linear input capacitance C,, = ~ ( V GVE~, EThe ) . model
for the Siemens half bridge module with ohmic load has
been simulated. The switching times achieved under the data
sheet conditions are shown in Table I where good agreement
between the simulations and measurements can be observed
(total errors are less than 10%).

B. The Free-Wheel Diode

In applications where an IGBT is not operated in the inverse
region (VCE < O), parameters associated with the free-wheel IV. EXPERIMENTAL
RESULTS
diode ( D F w )have no effect on the operation of the device
and need not be specified. When the free-wheel diode is The simulation results of the dc analysis were compared
being used in a critically timed operation, the reverse recovery to the dc characteristics given in the data sheet. The simu-
time t,, of the diode can be matched by adjusting the transit lation results of the transient analysis obtained by using the
time constant TT. The model will otherwise have a negligible dynamic model of the IGBT were compared to the switching
reverse recovery time when the diode turns off. However, all characteristics obtained by measurements.
necessary data needed for the real diode model can also be The measurements were done for a single half-bridge
obtained from the data sheet values as shown in Table I1 [lo]. configuration, suitable for PWM-application with a resis-
The AREA factor used in SPICE for the diode model tivehnductive load. The half-bridge configuration consists of
determines the number of equivalent parallel devices of a the half-bridge module, the dc-link-capacitor and the driving-
specified model [ 111. The diode model parameters affected circuits for the IGBT's. The half-bridge module, such as
by the AREA factor as shown in (39) are IS, RS and CJO: the BSM 25 GB 100 D contains two IGBT's and their
free-wheeling diodes in a single package. Because of the
IS = IS * AREA limited blocking voltage of electrolytic capacitors, the dc-link-
RS = RS/AREA capacitance is built up by two electrolytic capacitors connected
in series and a varistor connected in parallel to each of the
[Link] = [Link] * AREA. (39) capacitors to guarantee correct voltage distribution. A small
film capacitor is connected near the terminals of the half-
By adjusting these parameters, the optimal dynamic behavior
bridge module in parallel to the dc-link-capacitance providing
of the free-wheel diode can be achieved.
good high frequency characteristics of the dc-link-capacitance.
By adding inductances and resistances of the wires connecting
C. Simulation of the Dynamic Model the components to each other and to the voltage source, an
The SPICE IGBT macromodel has been simulated with a equivalent circuit shown in Fig. 9 can be drawn.
resistive-inductive load and free-wheeling diode. The obtained For measuring the switching characteristics of the half-
results are shown in Fig. 8. bridge's lower IGBT, the load was connected to the terminal
104 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 42. NO. I , FEBRUARY 1995

tute for Electromagnetic Energy Conversion, Graz University

of Technology, Austria.

REFERENCES
B. K. Bose, “Recent advances in power electronics,” IEEE Trans. Power
Electron., vol. 7, no. 1, pp. 2-16, Jan. 1992.
B. R. Pelly, “Status and trends of power semiconductors,” Invited Paper
on IECON ’92 Con$, San Diego, CA, Nov. 9-13, 1992.
- t A. R. Hefner, “Analytical modeling of device-circuit interactions for
600
the power insulated gate bipolar transistor (IGBT),” ZEEE Trans. Ind.
App/icar., vol. 26, no. 6, pp. 995-1005, Nov./Dec. 1990.
A. R. Hefner, “An investigation of the drive circuit requirements for
the power insulated gate bipolar transistor (IGBT),” IEEE Trans. Power
Electron.. vol. 6, no. 2, pp. 208-218, April 1991.
C. S. Mitter, A. R. Hefner, D. Y. Chen, and F. C. Lee, “Insulated gate
bipolar transistor (IGBT) modelling using IC-SPICE,” VPEC Seminar,
Blacksburg, VA, Sept. 15-17, 1991, pp. 255-261.
F. MihaliE, T. DogSa, M. MilanoviC, and K. Jezemik, “The IGBT-A
SPICE semiconductor switch model,” ACEMP ‘92 Con$ Rec., Kusadasi,
Turkey, vol. I of 2, pp. 198-203, May 27-29, 1992.
F. Mihalit, M. MilanoviC, D. Zadravec K. Jezernik, E. Reisinger,
c t K. Krischan, R. Filipitsch and M. Rentmeister, “IGBT SPICE macro
00 200 400 model,” IECON ‘92 Con$ Rrc., San Diego, CA, vol. I of 3, pp. 240-245,
Nov. 9-13, 1992.
(b) N. Mohan. T. M. Undeland, and W. P. Robbins, Power Electronics:
Fig. IO. Experimental turn-on and turn-off-waveforms for the lower IGBT. Converters. Applications and Design. New York: Wiley, 1989.
Intusoft, “SPICE User’s Guide,” Persona/ Computer Circuit Design
Tools, San Pedro, CA, 1990.
L. G . Meares and C. E. Hymowitz, “Simulating with SPICE,” Intusoft,
for the positive link voltage, as shown by the solid line in San Pedro, CA, 1988.
Fig. 9. The results of this measurement are drawn in Fig. 10. P. Antognetti and G. Massobrio, Semiconductor Device Modeling with
Fig. 10(a) shows the gate-to-emitter voltage, the collector- SPICE. New York: McGraw-Hill, 1988.
Siemens Aktiengeselschaft, Databook, 6.89.
to-emitter voltage and the collector current for tum-on and
Fig. 10(b) shows these signals for tum-off of the lower IGBT.
The measurements for the upper IGBT can be done by
connecting the load to the terminal for the negative link Franc Mihalie was born in Murska Sobota, Slove-
voltage, as shown by the dotted line in Fig. 9. nia, on August 29, 1963. He received the B.S. de-
gree in electrical engineering from the Department
of Electrical and Computer Engineering, Faculty of
Technical Sciences, University of Maribor, Slove-
V. CONCLUSION nia, in 1988.
In this paper, the complete IGBT SPICE macromodel has He worked at the electronics factory Elrad in
1989, He is presently studying for the M.S. degree
been described. First, the resistive and the dynamic macro- at the Department of Electrical and Computer En-
model have been successfully developed and simulated. The gineering, University of Maribor, where he works
convergence problems of the dc and transient analysis have as a Teaching and Research Assistant for the power
electronics. His main research interests are modeling of power electronics
been solved by using the appropriate number of iterations devices (MOSFET’s and IGBT’s) and simulation of power converters by
in .OPTIONS control statement and choosing the tmaw pa- using a SPICE simulator.
rameter in .TRAN control statement. The output and transfer
characteristics have been compared with the data sheets char-
acteristics. The switching times of the dynamic model have
also been verified with the measurements from the catalogue. Karel Jezernik (M’77) received the B.S., M.S.,
and Ph.D. degrees in electrical engineering from
The measurements of the half-bridge module compared with the Faculty of Electrical Engineering, University
the simulations have confirmed the usefulness of the complete of Ljubljana, Slovenia, in 1968, 1974, and 1976
IGBT SPICE macromodel. The use of this model is helpful in respectively. In the academic year 1974-1975 he
was on a study visit at the Institute of Automatic
further development of power electronics devices. Control in Braunschweig in Germany.
In 1976, he was elected Assistant Professor, and
in 1985, he became Professor of Electrical Engineer-
ACKNOWLEDGMENT ing at the Faculty of Technical Sciences, University
of Maribor. He was head of the Department of
The authors would like to thank Toni Verdenik, an un- Electrical Engineering (1977-1981). chairman of the R&D Institute at the
dergraduate student, for his excellent programming of the Department of Electrical Engineering from 1981-1985 and vice rector of the
computer program which computes the complete IGBT SPICE University of Maribor from 1985-1987. He is currently a member of the
Scientific Council of the Alpe-Adria Rectorial Conference and a member of
Model, and his mentor Tomai DogSa, Ph.D., an Assistant the Scientific-Technological Council of the Republic of Slovenia. His research
Professor, Miro MilanoviC, Ph.D., an Associate Professor, and interest is automatic control of motor drives in robotic mechanisms.
Danilo Zadravec, M.S., all at the Department of Electrical Dr. Jezemik is a member of the Electrotechnical Association of Slovenia
and vice-president of the Automation and Robotization Society of Slovenia.
Engineering, Computer Science and Technology, University of He is also a member of the publishing committee of the Electrotechnical
Maribor, Slovenia, and Robert Filipitsch, B.S. from the Insti- Review.
MlHALlC et al.: IGBT SPICE MODEL 105

Klaus Krischan was bom in Leibnitz, Austria, in Manfred Rentmeister was bom in 1939. He re-
1965. He received the Dipl. Ing. degree in electrical ceived the Ph.D. degree in electrical engineering in
engineering from Graz University of Technology, 1970 during work as an Assistant Professor.
Austria, in 1990. Between 1970 and 1976, he was with Siemens
In 1989 he joined the Institute of “Electromag- Company “Dynamowerk-Berlin,” West Germany,
netic Energy Conversion” at the Graz University working on developments of new synchronous and
of Technology as a research student, and in 1991 asynchronous motors for traction vehicles as well
became an Assistant Professor. His main interests as linear motors for high speed magnet vehicles.
are in the field of switchmode power conversion During this time his work on the area of “Modem
in connection with electrical drives. In his current Traction Vehicles” began. Since 1987, he has been
research he is involved in search for total svstem -
the chair of “Electromagnetic Enerrrv Conversion”
L_

losses of hard and soft switched dc link PWM inverters. at the Graz University of Technology.