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C945 Transistor Datasheet Overview

This document provides specifications for an NPN transistor in a TO-92 package. It lists maximum ratings for voltage and current parameters. The electrical characteristics include breakdown voltages, current gains, saturation voltages, transition frequency, output capacitance, and noise figure. It also classifies ranges for the current gain parameter hFE(1).

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130 views2 pages

C945 Transistor Datasheet Overview

This document provides specifications for an NPN transistor in a TO-92 package. It lists maximum ratings for voltage and current parameters. The electrical characteristics include breakdown voltages, current gains, saturation voltages, transition frequency, output capacitance, and noise figure. It also classifies ranges for the current gain parameter hFE(1).

Uploaded by

sahabateman
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

C945 TRANSISTOR (NPN ) TO-92

FEATURE [Link]

z Excellent hFE linearity


[Link]
z Low noise
z Complementary to A733 3. BASE

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


1 2 3

Symbol Parameter Value Units


VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 125 ℃
Tstg Storage Temperature -55-125 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT


Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=100uA , IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100mA, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA
Collector cut-off current ICEO VCE=45V 0.1 uA
Emitter cut-off current IEBO VEB=5V , IC=0 0.1 uA
hFE(1) VCE=6 V , IC=1mA 70 700
DC current gain
hFE(2) VCE=6 V , IC=0.1mA 40
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V
Transition frequency fT VCE=6V,IC=10mA,f =30 MHz 200 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 3.0 pF
VCE=6V,IC=0.1mA
Noise figure NF 10 dB
RG=10kΩ,f=1kMHZ

CLASSIFICATION OF hFE(1)
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
Typical Characteristics C945

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