Formulário:

kB 1,381 10 23 J/K 8,617 10-5 eV/K ; NA = 6,022 × 1023 moléculas/mol

h 6,626 10 34 J s 4,136 10-15 eV s ;  1,0546 × 10–34 J s = 6,582 × 10–16 eV s

me 9,109 10 31 kg ; mp 1, 673 10 27 kg

c 299790 km/s ; 0 = 8.854 10–12 F/m

e = 1,602 10–19 C; 1 eV = 1,602 10 19 J

2 h
Etot pc (m0c 2 )2 Tcin m0c 2 ; E hf ;
p
h
1 cos
mc
2
( x, t ) d 2 ( x)
i H ( x, t ) ; V ( x) ( x) E ( x)
t 2m dx 2

e
; σ=enμ; j E
m*

1 1 d 2E 4 (2 m)3 / 2
; D( E ) E EC
m* 2
dk 2 h3
1 EF E
f FD ( E ) ; f MB ( E ) exp
E EF kBT
1 exp
kBT

n e p e
;
Dn k BT Dp k BT

2
kF3 (2mEF )3/ 2 kF2
n ; EF ; pF kF
3 2 3 2 3 2m

3/ 2 3/ 2
2 m*n kB T 2 mp* kB T
NC 2 ; NV 2
h2 h2

1
 ( EF EC ) E EF
n NC exp ; p N V exp V ; n p n 2i
kBT kBT

n2i NC NV exp( Eg / kBT )

n p
Rn ; Rp
n p

jn nE + eDn grad n ; jp pE - eDp grad p

σn = e n μn ; σp = e n μp ; (e = |e|)
n 1 n p 1 p
gn div jn ; gp div j p
t e n t e p

Fn EC EV Fp Fn Fp
n n0 n NC exp ; p p0 p NV exp ; n p ni2 exp
kBT kBT kBT

kBT Nd Na d 2 ( x) ( x) dE
Vbi ln ;
e ni2 dx 2
0 r dx

2 r 0 N 1 2 r 0 N 1
xn Vbi A ; xp Vbi D ;
e ND NA ND e NA NA ND

2 1 1
W xn xp = 0 r
Vbi ;
e ND NA

eN A eN D
E x xp , xp x 0; E xn x , 0 x xn
0 r 0 r

T = 300 K Si Ge GaAs
10 13
ni (cm-3) 1.5×10 2.4×10 1.8×106

E g (eV) 1.12 0.66 1.42

1.08 0.55 0.067

r
11.7 16.0 13.1

a (Å) 5.43 5.65 5.65