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Density of States in Semiconductor Nanostructures

This document contains an exercise on semiconductor nanostructures that discusses density of states and effective mass. It includes two problems: [1] calculating the density of states in different dimensional systems and comparing graphene's linear dispersion to a 2D parabolic dispersion, and [2] estimating relative effective masses of conduction band electrons in different semiconductor materials based on their band gaps.

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0% found this document useful (0 votes)
34 views1 page

Density of States in Semiconductor Nanostructures

This document contains an exercise on semiconductor nanostructures that discusses density of states and effective mass. It includes two problems: [1] calculating the density of states in different dimensional systems and comparing graphene's linear dispersion to a 2D parabolic dispersion, and [2] estimating relative effective masses of conduction band electrons in different semiconductor materials based on their band gaps.

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Apu
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Thomas Ihn

Semiconductor Nanostructures
Fall 2017

Exercise 3 released: 04.10.2016


Topics: density of states, effective mass discussed: 11.10.2016

Problem 1: Density of states

The density of states D(E) is defined as

dN (E)
D(E) =
dE

where N (E) is the total number of states per volume below energy E.

1. Calculate the density of states in three-, two-, one- and zero-dimensional isotropic
systems, where the conduction band has a parabolic dispersion relation:

h̄2 k 2
E(k) =
2m?

hint: Consider that each state can be occupied by a spin-up and a spin-down
electron.

2. Graphene has a linear energy dispersion around the K-point

E(k) = ±h̄c? |k|

where c? is a constant called Fermi velocity. The conduction band corresponds to


"+" and the valence band to "-". Calculate the density of states for the valence-
and conduction bands of graphene and compare them to the the density of states
for a two-dimensional crystal with a parabolic dispersion relation. What is the
density of states at zero energy?
hint: Graphene has an additional valley-degeneracy of 2 (K, K’).

Problem 2: Effective mass

Given the band gaps of GaAs (1.5 eV) InAs (0.36 eV) and InP (1.27 eV) estimate the
relative effective masses m? /m of conduction band electrons.

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