Thomas Ihn
Semiconductor Nanostructures
Fall 2017
Exercise 5 handed out: 18.10.2016
Topics: heterostructures, p–n junctions discussed: 25.10.2016
Problem 1: Heterostructure p–n junction
Consider a heterointerface between the semiconductors AlGaAs and GaAs. The elec-
tron affinities are χGaAs =4.07eV and χAlGaAs =3.74eV and the energy band gaps are
1.424eV and 1.794eV, respectively. Suppose the AlGaAs is degenerately n-doped,
whereas the GaAs material is degenerately p-doped.
1. Sketch the (thermodynamic) equilibrium band diagram of this structure (valence
band edge and conduction band edge along an axis normal to the heterointer-
face).
2. Discuss similarities and differences to a p-n junction. In particular:
• Schematically plot the charge distribution in the device along an axis normal
to the interface.
• Express the width of space-charge layers in terms of doping densities, ma-
terial and interface parameters assuming that all dopants are fully ionized,
and that conduction and valence band dispersion relations are parabolic.
• Sketch the expected nonlinear I(V ) characteristic qualitatively.