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Heterostructure p-n Junction Analysis

This document discusses a heterostructure p-n junction between degenerately doped n-type AlGaAs and p-type GaAs semiconductors. It asks the student to: 1) Sketch the equilibrium band diagram at the heterointerface. 2) Discuss similarities and differences to a p-n junction, including schematically plotting the charge distribution, expressing the space-charge layer widths, and sketching the expected I-V characteristic.

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0% found this document useful (0 votes)
15 views1 page

Heterostructure p-n Junction Analysis

This document discusses a heterostructure p-n junction between degenerately doped n-type AlGaAs and p-type GaAs semiconductors. It asks the student to: 1) Sketch the equilibrium band diagram at the heterointerface. 2) Discuss similarities and differences to a p-n junction, including schematically plotting the charge distribution, expressing the space-charge layer widths, and sketching the expected I-V characteristic.

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Apu
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Thomas Ihn

Semiconductor Nanostructures
Fall 2017

Exercise 5 handed out: 18.10.2016


Topics: heterostructures, p–n junctions discussed: 25.10.2016

Problem 1: Heterostructure p–n junction

Consider a heterointerface between the semiconductors AlGaAs and GaAs. The elec-
tron affinities are χGaAs =4.07eV and χAlGaAs =3.74eV and the energy band gaps are
1.424eV and 1.794eV, respectively. Suppose the AlGaAs is degenerately n-doped,
whereas the GaAs material is degenerately p-doped.

1. Sketch the (thermodynamic) equilibrium band diagram of this structure (valence


band edge and conduction band edge along an axis normal to the heterointer-
face).

2. Discuss similarities and differences to a p-n junction. In particular:

• Schematically plot the charge distribution in the device along an axis normal
to the interface.

• Express the width of space-charge layers in terms of doping densities, ma-


terial and interface parameters assuming that all dopants are fully ionized,
and that conduction and valence band dispersion relations are parabolic.

• Sketch the expected nonlinear I(V ) characteristic qualitatively.

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